CN103390877B - A kind of over-current detection and protection circuit - Google Patents
A kind of over-current detection and protection circuit Download PDFInfo
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- CN103390877B CN103390877B CN201310342136.6A CN201310342136A CN103390877B CN 103390877 B CN103390877 B CN 103390877B CN 201310342136 A CN201310342136 A CN 201310342136A CN 103390877 B CN103390877 B CN 103390877B
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Abstract
This application provides a kind of over-current detection and protection circuit, including: driver element, sampling unit, signal generation unit, closing unit and holding unit, wherein, driver element is used for driving load circuit；Sampling unit is for gathering the electric current in load circuit loop；Signal generation unit is for when the electric current in load circuit loop is more than preset value, producing over-current signal；Closing unit, for when receiving over-current signal, closes driver element；Holding unit is for keeping the closed mode of driver element, until receiving the control signal opening driver element that MCU sends.The over-current detection of the application offer and protection circuit, the electric current in load circuit loop being detected is more than preset value, also can be locked and closed state by quick closedown driver element, thus realize the protection to circuit.
Description
Technical field
The present invention relates to current protection technology field, particularly relate to a kind of over-current detection and protection circuit.
Background technology
Input impedance is big, conducting owing to having for power tube such as metal-oxide layer-quasiconductor-field effect transistor M OSFET
The plurality of advantages such as pressure drop is little and be applied in drive circuit.But, when the electric current flowing through MOSFET is excessive, due to its internal resistance
Existence, power can be caused excessive and damage device.
For the problems referred to above, prior art generally uses following solution: current detection circuit detection flows through MOSFET
Electric current, current detection circuit detection electric current beyond a setting value time, to micro-control unit (Micro Control Unit,
MCU) sending over-current signal, MOSFET is turned off after receiving over-current signal by MCU.
Inventor finds during realizing the invention: receive over-current signal to performing shutoff operation from MCU
Need a period of time, during this period, owing to electric current is excessive, driving element MOSFET may be already led to and damage.
Summary of the invention
In view of this, the invention provides a kind of over-current detection and protection circuit, prior art connects from MCU in order to solving
Receiving over-current signal needs a period of time to performing shutoff operation, during this period, owing to electric current is excessive, may already lead to
The problem that driving element MOSFET damages, its technical scheme is as follows:
A kind of over-current detection and protection circuit, including: driver element, sampling unit, signal generation unit, closing unit and
Holding unit, wherein:
Described driver element, is used for driving load circuit；
Described sampling unit, for gathering the electric current in described load circuit loop；
Described signal generation unit, for when the electric current in described load circuit loop is more than preset value, producing stream
Signal；
Closing unit, for when receiving described over-current signal, closes described driver element；
Holding unit, for keeping the closed mode of described driver element, drives described in the unlatching that MCU sends until receiving
The control signal of moving cell.
Wherein, described driver element is power tube.
Preferably, described power tube is N-channel field effect transistor；
The drain electrode of described N-channel field effect transistor is connected with described load circuit, the source electrode of described N-channel field effect transistor and institute
Stating sampling unit to connect, the grid of described N-channel field effect transistor is connected with described closing unit.
Wherein, described sample circuit is sampling resistor；
First end of described sampling resistor is connected with the source electrode of described N-channel field effect transistor, the second of described sampling resistor
End ground connection.
Wherein, described signal generation unit is comparator；
The normal phase input end of described comparator is connected with reference voltage source, input reference voltage Vref, described comparator
Negative-phase input inputs the voltage on described sampling resistor, and the outfan of described comparator is connected with described closing unit, described
The outfan of comparator also input pin with described MCU is connected.
Wherein, described closing unit is AND circuit；
The first input end of described AND circuit is connected with the outfan of described comparator, and the second of described AND circuit is defeated
Enter end to be connected with first output pin of described MCU, the outfan of described AND circuit and the grid of described N-channel field effect transistor
Connect.
Wherein, described holding unit includes: NPN transistor, PNP transistor, the first current-limiting resistance, the second current limliting electricity
Resistance, pull down resistor, the first divider resistance and the second divider resistance；
The base stage of described NPN transistor is connected with the first end of described first current-limiting resistance, described NPN transistor
Emitter stage is connected with the first end of described pull down resistor, and the colelctor electrode of described NPN transistor is connected with power supply, input power electricity
Pressure VCC；Second end of described first current-limiting resistance is connected with second output pin of described MCU, inputs second control of described MCU
Signal processed；Second end ground connection of described pull down resistor；
The base stage of described PNP transistor is connected with the first end of described second current-limiting resistance, described PNP transistor
Emitter stage is connected with the emitter stage of described NPN transistor, the colelctor electrode of described PNP transistor and described first divider resistance
First end connect；Second end of described second current-limiting resistance is connected with the outfan of described comparator；Described first dividing potential drop electricity
Second end of resistance is connected with the first end of described second divider resistance；First end of described second divider resistance also compares with described
The negative-phase input of device connects, and the second end of described second divider resistance is connected with the first end of described sampling resistor.
Technique scheme has the advantages that
In the over-current detection of present invention offer and protection circuit, drive unit drives load circuit, sampling unit collection is born
Carrying the electric current in circuit loop, when the electric current in load circuit loop is more than preset value, signal generation unit produced stream letter
Number, over-current signal turns off unit and is closed by driver element, and when driver element is closed, holding unit is by the closedown of driver element
State locks.Over-current detection and protection circuit electric current in load circuit loop being detected that the present invention provides are more than default
Value, energy quick closedown driver element is also locked and closed state, thus reaches the protection to circuit.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to according to
The accompanying drawing provided obtains other accompanying drawing.
Over-current detection that Fig. 1 provides for the embodiment of the present invention and the structural representation of protection circuit；
Over-current detection that Fig. 2 provides for the embodiment of the present invention and the physical circuit figure of protection circuit.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
Referring to Fig. 1, the over-current detection provided for the embodiment of the present invention and the structural representation of protection circuit, this circuit can
To include: driver element 101, sampling unit 102, signal generation unit 103, closing unit 104 and holding unit 105.Wherein:
Driver element 101, is used for driving load circuit.
In the present embodiment, driver element 101 can be power tube, and power tube can be high power transistor or field effect
Pipe.
Sampling unit 102, for gathering the electric current in load circuit loop.
Signal generation unit 103, for when the electric current in load circuit loop is more than preset value, producing over-current signal.
The over-current signal that signal generation unit 103 produces, is on the one hand sent to closing unit 104, is on the other hand sent to
MCU, reports to the police to MCU.
Closing unit 104, for when receiving over-current signal, closes driver element.
Holding unit 105, for keeping the closed mode of driver element 101, until receiving the unlatching driving that MCU sends
The control signal of unit 101.
The over-current detection of embodiment of the present invention offer and protection circuit, drive unit drives load circuit, sampling unit is adopted
Electric current in collection load circuit loop, when the electric current in load circuit loop is more than preset value, signal generation unit produced
Stream signal, over-current signal turns off unit and is closed by driver element, and when driver element is closed, holding unit is by driver element
Closed mode locks.Over-current detection and protection circuit self that the embodiment of the present invention provides achieve that over-current detection, and in inspection
When measuring the electric current in load circuit loop more than preset value, the closed mode of driver element is also locked by quick closedown driver element
Fixed, and need not again over-current signal be sent toward MCU, wait that MCU controls driver element and closes.
Referring to Fig. 2, the over-current detection provided for the embodiment of the present invention and the physical circuit figure of protection circuit, this circuit can
To include: driver element 101, sampling unit 102, signal generation unit 103, closing unit 104 and holding unit 105.Wherein,
Driver element 101 includes N-channel field effect transistor Q1, sampling unit 102 includes sampling resistor R4, signal generation unit 103 includes ratio
Relatively device U1, closing unit 104 includes AND circuit U2, holding unit 105 includes NPN transistor Q2, PNP transistor Q3,
One current-limiting resistance R5, the second current-limiting resistance R6, pull down resistor R1, the first divider resistance R2With the second divider resistance R3。
In addition, it is necessary to explanation, the V in Fig. 2M1、VM2And VM3It is respectively first output pin of MCU, the second outlet tube
Foot and input pin, the first output pin output first controls signal to closing unit 104, second input pin output the second control
Signal processed, to holding unit 105, the over-current signal input MCU that signal generation unit 103 is produced by input pin, is reported to the police to MCU.
Concrete, N-channel field effect transistor Q1Drain electrode as outfan, be connected with load circuit, N-channel field effect transistor Q1
Source electrode and sampling resistor R4First end connect, N-channel field effect transistor Q1Grid be connected with the outfan of AND circuit U2.
Sampling resistor R4The second end ground connection.
Comparator U1Normal phase input end be connected with reference voltage source, input reference voltage Vref, comparator U1Negative defeated
Enter end and the second divider resistance R3First end connect, comparator U1Outfan and AND circuit U2First input end connect,
Comparator U1Outfan also with the input pin V of MCUM3Connect.Second divider resistance R3The second end and sampling resistor R4?
One end connects.AND circuit U2The first output pin V of the second input and MCUM1Connect, the first control letter of input MCU
Number, AND circuit U2Outfan and N-channel field effect transistor Q1Grid connect.
NPN transistor Q2Base stage and the first current-limiting resistance R5First end connect, NPN transistor Q2Emitter stage
With pull down resistor R1First end connect, NPN transistor Q2Colelctor electrode be connected with power supply, input supply voltage VCC.First
Current-limiting resistance R5The second output pin V of the second end and MCUM2Connect, second control signal of input MCU.Pull down resistor R1
The second end ground connection.
PNP transistor Q3Base stage and the second current-limiting resistance R6First end connect, PNP transistor Q3Emitter stage
With NPN transistor Q2Emitter stage connect, the colelctor electrode of PNP transistor and the first divider resistance R2First end connect.The
Two current-limiting resistance R6The second end and comparator U1Outfan connect.First divider resistance R2The second end and the second dividing potential drop electricity
Resistance R3First end connect.
Below in conjunction with Fig. 2, the operation principle of over-current detection and protection circuit is described in detail.
(the first output pin V of MCU opened by load circuitM1Output high level) time, the second output pin V of MCUM2Defeated
Go out of short duration low level to be unlocked, now, NPN transistor Q2With PNP transistor Q3Cut-off, A point voltage V in Fig. 2AFor
Low, this way it is ensured that comparator U when load circuit is opened1Output high level, Q1Conducting.After unblock completes, second output of MCU
Pin VM2For high level, circuit enters normal operating conditions, NPN transistor Q2Conducting, now, B point voltage approximates VCC-VBE2,
Wherein, VBE2For NPN transistor Q2The pressure drop of base-emitter.If the running current flowing through load is INARMAL, then,
Sampling resistor R4On pressure drop VNORMAL=R4*INORMAL<Vref.Comparator U1Output high level, audion Q3Cut-off.
When circuit generation overcurrent condition, such as, it is shorted to power supply, sampling resistor R4On pressure drop increase, when electric current surpass
Stream thresholding time, comparator U1Output by high level upset be low level, wherein, cross stream thresholding be Vref/R4.On the one hand,
The input pin V of voltage energizing signal input MCUM3Reporting to the police to MCU, on the other hand, low level signal is transferred to PNP transistor Q3
Base stage, now, PNP transistor Q3Conducting.PNP transistor Q3The voltage V of colelctor electrodeC=VB-VCE3, wherein, VCE3It it is PNP crystal
Pipe Q3On pressure drop.Due to sampling resistor R4Resistance is the least, and its pressure drop can be ignored, now, and A point voltage VABy the first dividing potential drop electricity
Resistance R2With the second divider resistance R3To VCDividing potential drop obtains, and chooses R2、R3Suitably resistance so that A point voltage V when crossing streamA>Vref.With
This simultaneously, comparator U1Output signal be transferred to AND circuit U2, AND circuit U2Control N-channel field effect transistor Q1Grid
Voltage is low level by high level upset, N-channel field effect transistor Q1Turning off, in loop, electric current is gradually reduced.Due to A point voltage VA
Keep constant, always more than Vref, comparator U1Outfan remains low level, therefore, and N-channel field effect transistor Q1Will not lead always
Logical, until circuit is controlled by MCU, thus when having reached that circuit is crossed stream, the locking of drive circuit closed mode.
The over-current detection of embodiment of the present invention offer and protection circuit, be made up of simple components and parts, it is possible to send out at circuit
During raw overcurrent condition, close rapidly drive circuit, and lock the closed mode of drive circuit, reduce the wind that power tube burns
Danger, has saved cost.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple amendment to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can realize without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein and features of novelty phase one
The widest scope caused.
Claims (6)
1. over-current detection and a protection circuit, be connected with MCU, it is characterised in that including: driver element, sampling unit, signal
Generation unit, closing unit and holding unit, wherein:
Described driver element, is used for driving load circuit；
Described sampling unit, for gathering the electric current in described load circuit loop；
Described signal generation unit, for when the electric current in described load circuit loop is more than preset value, producing over-current signal,
And described over-current signal is sent to described closing unit and MCU；
Described closing unit, for when receiving described over-current signal, closes described driver element；
Described holding unit, for keeping the closed mode of described driver element, drives described in the unlatching that MCU sends until receiving
The control signal of moving cell；
Wherein, described signal generation unit is comparator；
Described sample circuit is sampling resistor；
Described holding unit includes: NPN transistor, PNP transistor, the first current-limiting resistance, the second current-limiting resistance, drop-down electricity
Resistance, the first divider resistance and the second divider resistance；
The base stage of described NPN transistor is connected with the first end of described first current-limiting resistance, the transmitting of described NPN transistor
Pole is connected with the first end of described pull down resistor, and the colelctor electrode of described NPN transistor is connected with power supply, input supply voltage
VCC；Second end of described first current-limiting resistance is connected with second output pin of described MCU；Second termination of described pull down resistor
Ground；
The base stage of described PNP transistor is connected with the first end of described second current-limiting resistance, the transmitting of described PNP transistor
Pole is connected with the emitter stage of described NPN transistor, the of the colelctor electrode of described PNP transistor and described first divider resistance
One end connects；Second end of described second current-limiting resistance is connected with the outfan of described comparator；Described first divider resistance
Second end is connected with the first end of described second divider resistance；First end of described second divider resistance also with described comparator
Negative-phase input connects, and the second end of described second divider resistance is connected with the first end of described sampling resistor.
Over-current detection the most according to claim 1 and protection circuit, it is characterised in that described driver element is power tube.
Over-current detection the most according to claim 2 and protection circuit, it is characterised in that described power tube is N-channel field effect
Ying Guan；
The drain electrode of described N-channel field effect transistor is connected with described load circuit, and the source electrode of described N-channel field effect transistor is adopted with described
Sample unit connects, and the grid of described N-channel field effect transistor is connected with described closing unit.
Over-current detection the most according to claim 3 and protection circuit, it is characterised in that the first end of described sampling resistor with
The source electrode of described N-channel field effect transistor connects, the second end ground connection of described sampling resistor.
Over-current detection the most according to claim 4 and protection circuit, it is characterised in that
The normal phase input end of described comparator is connected with reference voltage source, input reference voltage Vref, the negative of described comparator is defeated
Entering end and input the voltage on described sampling resistor, the outfan of described comparator is connected with described closing unit, described comparator
Outfan also input pin with described MCU be connected.
Over-current detection the most according to claim 5 and protection circuit, it is characterised in that described closing unit is and door electricity
Road；
The first input end of described AND circuit is connected with the outfan of described comparator, the second input of described AND circuit
Being connected with first output pin of described MCU, the outfan of described AND circuit connects with the grid of described N-channel field effect transistor
Connect.
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| CN201310342136.6A CN103390877B (en) | 2013-08-07 | 2013-08-07 | A kind of over-current detection and protection circuit |
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| CN201310342136.6A CN103390877B (en) | 2013-08-07 | 2013-08-07 | A kind of over-current detection and protection circuit |
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| CN103390877A CN103390877A (en) | 2013-11-13 |
| CN103390877B true CN103390877B (en) | 2016-12-28 |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105633908B (en) | 2014-10-30 | 2018-08-31 | 华硕电脑股份有限公司 | Electronic device and power protection method |
| CN104485635A (en) * | 2014-12-30 | 2015-04-01 | 青岛歌尔声学科技有限公司 | Overcurrent protection circuit and overcurrent protection device |
| CN104617546B (en) * | 2015-02-13 | 2017-11-03 | 北京豪沃尔科技发展股份有限公司 | A kind of output overcurrent and short-circuit protection circuit |
| CN107477017B (en) * | 2017-08-31 | 2019-04-30 | 广东美芝制冷设备有限公司 | Fan Drive Protecting Circuit, fan and vehicle |
| CN107732868A (en) * | 2017-09-21 | 2018-02-23 | 广州金升阳科技有限公司 | A kind of overcurrent protection control method and overcurrent protective device |
| CN108258978A (en) * | 2018-03-07 | 2018-07-06 | 深圳市沃特沃德股份有限公司 | Motor control assembly |
| CN110890738A (en) * | 2018-09-07 | 2020-03-17 | 深圳市芯卓微科技有限公司 | Charging interface overcurrent turn-off protection circuit |
| CN109526109B (en) * | 2018-12-24 | 2023-12-26 | 江阴华慧源电子技术有限公司 | Load protection system of solar street lamp controller |
| CN110137903B (en) * | 2019-05-09 | 2021-10-15 | 中国航空工业集团公司西安航空计算技术研究所 | Power output interface implementation circuit with heterogeneous protection |
| CN112865769A (en) * | 2021-01-19 | 2021-05-28 | 珠海拓芯科技有限公司 | Drive circuit and electronic equipment |
| CN113241724B (en) * | 2021-04-25 | 2023-02-03 | 上海空间电源研究所 | Load power supply overcurrent self-locking and unlocking circuit and method for satellite |
| CN114089226B (en) * | 2022-01-18 | 2022-04-12 | 成都市安比科技有限公司 | Active load detection circuit with anti-static damage and controllable overcurrent protection functions |
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| JP3415759B2 (en) * | 1998-02-17 | 2003-06-09 | 富士通アクセス株式会社 | Overcurrent protection circuit for switching power supply |
| TWI258909B (en) * | 2005-01-10 | 2006-07-21 | Cable Vision Electronics Co Lt | Overcurrent protection device |
| CN101043131B (en) * | 2007-04-13 | 2011-11-02 | 郭振清 | AI electric power terminal protectors |
| CN100588062C (en) * | 2008-01-14 | 2010-02-03 | 常熟开关制造有限公司(原常熟开关厂） | Control and protective circuit on control and protective switch electric apparatus |
| CN101447783A (en) * | 2008-12-10 | 2009-06-03 | 上海复展照明科技有限公司 | Self-sustained protective circuit based on gate circuit and implementation method thereof |
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| CN102996274B (en) * | 2012-12-14 | 2015-04-22 | 中国第一汽车股份有限公司无锡油泵油嘴研究所 | Electromagnetic valve driving device capable of bearing high frequency switching loss |
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