CN112865769A

CN112865769A - Drive circuit and electronic equipment

Info

Publication number: CN112865769A
Application number: CN202110071557.4A
Authority: CN
Inventors: 周鹏宇; 游建剑
Original assignee: Ningbo Aux Electric Co Ltd; Zhuhai Tuoxin Technology Co Ltd
Current assignee: Ningbo Aux Electric Co Ltd
Priority date: 2021-01-19
Filing date: 2021-01-19
Publication date: 2021-05-28

Abstract

The invention provides a driving circuit and electronic equipment, and relates to the technical field of semiconductor device driving. The driving circuit comprises a to-be-driven device, a driving unit, an under-voltage protection unit and an MCU (microprogrammed control unit), wherein the under-voltage protection unit is electrically connected with the MCU and the driving unit respectively; the undervoltage protection unit is used for transmitting a driving signal to the driving unit when the voltage of the driving power supply is greater than a threshold value so as to enable a device to be driven to work; the undervoltage protection unit is also used for transmitting a cut-off signal to the driving unit when the voltage of the driving power supply is smaller than a threshold value so as to stop the device to be driven. The driving circuit and the electronic equipment provided by the invention have the advantages that the device to be driven can not work under the scene of too low driving voltage, and the device to be driven is effectively protected.

Description

Drive circuit and electronic equipment

Technical Field

The application relates to the technical field of semiconductor device driving, in particular to a driving circuit and electronic equipment.

Background

SiC power switching semiconductor devices such as SiC MOSFETs (silicon carbide field effect transistors) and SiC BJTs (silicon carbide bipolar junction transistors) have high requirements for gate drive voltage due to their material specificities. If the power switching device is always operated at a low driving voltage, the SiC power switching semiconductors such as SiC MOSFETs and SiC BJTs have a large operating loss, and are liable to cause a series of adverse effects such as heat generation.

However, in the driving circuit of the silicon material commonly used at present, there is no under-voltage protection unit circuit, and the silicon carbide is driven by applying this method, if the driving voltage is too low and abnormal conditions occur, the system will not report the abnormality and continue working, and the silicon carbide semiconductor loss is too high, resulting in abnormal heating.

In summary, in the conventional drive circuit for a silicon carbide semiconductor device, a problem of abnormal heat generation due to excessive loss of the silicon carbide semiconductor is likely to occur.

Disclosure of Invention

The invention aims to provide a driving circuit and an electronic device, which aim to solve the problem that in the prior art, the silicon carbide semiconductor is easy to have high loss, so that abnormal heating is caused.

In order to solve the above problems, in one aspect, the present invention provides a driving circuit, which includes a device to be driven, a driving unit, an under-voltage protection unit, and an MCU, wherein the under-voltage protection unit is electrically connected to the MCU and the driving unit, the driving unit is electrically connected to the device to be driven, the driving unit and the under-voltage protection unit are both connected to a driving power supply,

the MCU is used for generating a driving signal;

the under-voltage protection unit is used for transmitting the driving signal to the driving unit when the voltage of the driving power supply is greater than a threshold value so as to enable the device to be driven to work;

the under-voltage protection unit is also used for transmitting a cut-off signal to the driving unit when the voltage of the driving power supply is smaller than a threshold value so as to stop the device to be driven.

Because the drive circuit that this application provided includes the undervoltage protection unit, consequently when drive power supply's voltage is less than the threshold value, the undervoltage protection unit can transmit the cutoff signal to the drive unit, and then makes and treats that the drive device can not work under the too low scene of drive voltage, has effectively protected and has treated the drive device.

Optionally, the under-voltage protection unit includes a comparator and an and gate, a positive phase input terminal of the comparator is electrically connected to the driving power supply, a negative phase input terminal of the comparator is electrically connected to a comparison power supply, an output terminal of the comparator is electrically connected to a first input terminal of the and gate, a second input terminal of the and gate is electrically connected to the MCU, and an output terminal of the and gate is electrically connected to the driving unit; wherein the content of the first and second substances,

the comparator is used for outputting a high level when the voltage of the positive phase input end is greater than the voltage of the negative phase input end;

the comparator is also used for outputting a low level when the voltage of the positive phase input end is less than the voltage of the negative phase input end;

the AND gate is used for transmitting the driving signal to the driving unit when the comparator outputs a high level;

and the AND gate is also used for transmitting a cut-off signal to the driving unit when the comparator outputs a low level.

Optionally, the under-voltage protection unit further includes a first voltage division module and a second voltage division module, the first voltage division module is electrically connected to the driving power supply and the positive phase input terminal of the comparator, and the first voltage division module is grounded; the second voltage division module is respectively and electrically connected with the comparison power supply and the inverting input end of the comparator, and the second voltage division module is grounded.

Optionally, the first voltage division module includes a first resistor and a second resistor, a first end of the first resistor is electrically connected to the driving power supply, a second end of the first resistor is electrically connected to the positive input terminal of the comparator and the first end of the second resistor, respectively, and a second end of the second resistor is grounded;

the second voltage division module comprises a third resistor and a fourth resistor, a first end of the third resistor is electrically connected with the comparison power supply, a second end of the third resistor is electrically connected with the inverting input end of the comparator and a first end of the fourth resistor respectively, and a second end of the fourth resistor is grounded.

Optionally, the driving circuit further comprises an alarm unit, and the MCU is further electrically connected to the output end of the driving unit and the alarm unit respectively;

the MCU is also used for acquiring the output signal of the driving unit and controlling the alarm unit to give an alarm when the output signal of the driving unit is a non-driving signal.

Optionally, the driving circuit further includes an alarm unit, and the MCU is further electrically connected to the output end of the under-voltage protection unit and the alarm unit, respectively;

the MCU is also used for acquiring the output signal of the undervoltage protection unit and controlling the alarm unit to alarm when the output signal of the undervoltage protection unit is a non-driving signal.

Optionally, the driving unit includes a first triode and a second triode, a base of the first triode and a base of the second triode are electrically connected to an output end of the undervoltage protection unit, a collector of the first triode is electrically connected to the driving power supply, an emitter of the first triode is electrically connected to an emitter of the second triode and the device to be driven, respectively, and the collector of the second triode is grounded.

Optionally, the device to be driven comprises a SiC power switching semiconductor device.

Optionally, the driving circuit further includes a driving resistor, a first end of the driving resistor is electrically connected to the output end of the driving unit, and a second end of the driving resistor is electrically connected to the device to be driven.

On the other hand, the embodiment of the application also provides an electronic device, and the electronic device comprises the driving circuit.

Drawings

Fig. 1 is a circuit diagram of a driving circuit in the prior art.

Fig. 2 is a block diagram of a driving circuit according to an embodiment of the present disclosure.

Fig. 3 is a first circuit schematic diagram of a driving circuit according to an embodiment of the present disclosure.

Fig. 4 is a second circuit schematic diagram of a driving circuit according to an embodiment of the present disclosure.

Description of reference numerals:

100-a drive circuit; 110-MCU; 120-an undervoltage protection unit; 130-a drive unit; 140-a device to be driven; 150-an alarm unit; u1-comparator; U2-AND gate; VDD-drive power supply; VCC-comparison power supply; r1 — first resistance; r2 — second resistance; r3 — third resistance; r4-fourth resistor; q1-first triode; q2-second transistor; rg-drive resistor.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.

As described in the background art, SiC power switching semiconductor devices such as SiC MOSFETs and SiC BJTs have high requirements for gate drive voltage due to their material specificities. If the power switching device is always operated under the condition of low driving voltage, the operation loss of SiC power switching semiconductors such as SiC MOSFETs, SiC BJTs and the like is very large.

Therefore, when a drive circuit of a SiC power switch semiconductor device such as a SiC MOSFET and a SiC BJT is designed, it is necessary to design an undervoltage protection unit, and when the voltage is lower than a certain voltage value, the semiconductor device such as the SiC MOSFET cannot operate, otherwise, a series of adverse effects such as heat generation are easily caused.

As shown in fig. 1, when receiving a driving signal, the driving signal drives Q3 to turn on no matter whether the voltage of the driving power VDD is in a low voltage state, so that the driving power VDD acts on the gate of the device to turn on the device. However, when the device is operated in a low-voltage state, high loss, abnormal heat generation, and the like are liable to occur.

In view of this, the present application provides a driving circuit, which controls a device to stop working when a driving power supply VDD is in a low voltage state by adding an under-voltage protection unit in the driving circuit, so as to effectively protect the device.

The following is an exemplary description of the driving circuit provided in the present application:

as an implementation manner, referring to fig. 2, the driving circuit 100 includes a device to be driven 140, a driving Unit 130, an under-voltage protection Unit 120, and an MCU110(micro controller Unit), where the under-voltage protection Unit 120 is electrically connected to the MCU110 and the driving Unit 130, the driving Unit 130 is electrically connected to the device to be driven 140, and the driving Unit 130 and the under-voltage protection Unit 120 are both connected to a driving power VDD.

The MCU110 is configured to generate a driving signal, and the under-voltage protection unit 120 is configured to transmit the driving signal to the driving unit 130 when the voltage of the driving power supply VDD is greater than a threshold value, so as to enable the device to be driven 140 to operate, and transmit a cut-off signal to the driving unit 130 when the voltage of the driving power supply VDD is less than the threshold value, so as to enable the device to be driven 140 to stop operating.

It can be understood that, because the under-voltage protection unit 120 is also electrically connected to the driving power supply VDD, and the under-voltage protection unit 120 can transmit the cut-off signal to the driving unit 130 in a comparison manner when the voltage of the driving power supply VDD is smaller than the threshold, so as to control the to-be-driven device 140 to stop working, it can play a role of effectively protecting the to-be-driven device 140 when the driving power supply VDD outputs a low voltage.

It should be noted that the device to be driven 140 described in the present application may be a SiC power switching semiconductor device, such as a SiC MOSFET, a SiC BJT, or other SiC power switching semiconductor devices. Of course, in an alternative implementation, the device to be driven 140 may also be a device of other materials, such as a silicon material device.

Optionally, referring to fig. 3, the under-voltage protection unit 120 includes a comparator U1 and an and gate U2, a positive phase input terminal of the comparator U1 is electrically connected to the driving power VDD, a negative phase input terminal of the comparator U1 is electrically connected to a comparison power VCC, an output terminal of the comparator U1 is electrically connected to a first input terminal of the and gate U2, a second input terminal of the and gate U2 is electrically connected to the MCU110, and an output terminal of the and gate U2 is electrically connected to the driving unit 130.

The comparator U1 is configured to output a high level when the voltage at the positive input terminal is greater than the voltage at the negative input terminal, and output a low level when the voltage at the positive input terminal is less than the voltage at the negative input terminal. The and gate U2 is used to transmit a driving signal to the driving unit 130 when the comparator U1 outputs a high level, and to transmit a cutoff signal to the driving unit 130 when the comparator U1 outputs a low level.

It can be understood that the comparator U1 is used to determine the magnitudes of the driving power VDD and a threshold, where the threshold is a voltage value that needs to be protected by voltage, and when the voltage of the driving power VDD is higher than the voltage value, the device can be controlled to operate normally; when the voltage of the driving power supply VDD is lower than the voltage value, it indicates that the driving power supply VDD is in a low voltage state at this time, and the device should be controlled to stop working to protect the device.

The operation principle of the and gate U2 is that when the first input terminal and the second input terminal of the and gate U2 are both at high level, the and gate U2 outputs high level, and when the first input terminal or the second input terminal of the and gate U2 is at low level, the and gate U2 outputs low level. It can be seen that when the comparator U1 outputs a high level, the signal output by the and gate U2 matches the signal of the MCU110, in other words, the and gate U2 outputs a driving signal to the driving unit 130.

The driving signal output by the MCU110 is a PWM pulse signal, i.e., a high level and a low level are periodically input, so that when the voltage of the driving power VDD is greater than the threshold, the and gate U2 also outputs the PWM pulse signal, and the pulse signal is consistent with the pulse signal output by the MCU110, thereby controlling the operation of the driving unit 130 and achieving the effect of controlling the device to be driven 140.

When the voltage of the driving power VDD is lower than the threshold, the comparator U1 outputs a low level, and at this time, no matter what kind of signal is input to the second input terminal of the and gate U2, the and gate U2 outputs a low level, so that the and gate U2 outputs a cut-off signal to the driving unit 130.

Therefore, with the driving circuit 100 provided by the present application, not only can the normal operation of the device to be driven 140 be ensured when the voltage of the driving power supply VDD is greater than the threshold value, but also the device to be driven 140 can be controlled to stop operating when the voltage of the driving power supply VDD is lower than the threshold value, thereby effectively protecting the device to be driven 140.

As an optional implementation manner, the under-voltage protection unit 120 further includes a first voltage division module and a second voltage division module, the first voltage division module is electrically connected to the driving power VDD and the positive phase input terminal of the comparator U1, respectively, and the first voltage division module is grounded; the second voltage division module is respectively and electrically connected with a comparison power supply VCC and an inverting input end of the comparator U1, and the second voltage division module is grounded.

The first voltage division module comprises a first resistor R1 and a second resistor R2, a first end of the first resistor R1 is electrically connected with the driving power supply VDD, a second end of the first resistor R1 is electrically connected with a non-inverting input end of the comparator U1 and a first end of the second resistor R2, and a second end of the second resistor R2 is grounded. The second voltage division module comprises a third resistor R3 and a fourth resistor R4, a first end of the third resistor R3 is electrically connected with the comparison power supply VCC, a second end of the third resistor R3 is electrically connected with an inverting input end of the comparator U1 and a first end of the fourth resistor R4 respectively, and a second end of the fourth resistor R4 is grounded.

Understandably, the voltage value of the undervoltage protection can be set by setting the voltage division module consisting of the resistors, the undervoltage protection can be completed by only adjusting different resistance values, the circuit is simple, and the cost is low.

The voltage at the non-inverting input terminal of the comparator U1 satisfies the formula:

va is VDD × R2/(R1+ R2), where Va denotes the voltage at the non-inverting input terminal, VDD denotes the voltage of the driving power supply VDD, R1 denotes the resistance value of the first resistor R1, and R2 denotes the resistance value of the second resistor R2.

The voltage at the inverting input of comparator U1 satisfies the formula:

vb is VCC R4/(R3+ R4), where Vb represents the voltage at the inverting input terminal, VCC represents the voltage of the comparison power supply VCC, R3 represents the resistance of the third resistor R3, and R4 represents the resistance of the fourth resistor R4.

Meanwhile, if the voltage value required to perform under-voltage protection is set to be Vsd, the signal output by the comparator U1 is Vc, and the signal output by the and gate U2 is Vd, then by designing appropriate resistance values of R1, R2, R3 and R4, the following functions can be realized:

1. when VDD is larger than Vsd and Va is larger than Vb, the output Vc of the comparator U1 is at high level, and the Vd level output by the AND gate U2 is the same as the PWM signal output by the MCU 110.

2. When VDD < Vsd and Va < Vb, the output Vc of the comparator U1 is at low level, and the output Vd of the AND gate U2 is at low level, so that the driving unit 130 cannot operate.

3. When VDD is Vsd, the output state of the comparator U1 is kept at the current output state, and when the VDD voltage changes, the operation is performed according to the above case 1 or case 2.

As an implementation manner, the driving unit 130 includes a first triode Q1 and a second triode Q2, bases of the first triode Q1 and the second triode Q2 are both electrically connected to an output terminal of the undervoltage protection unit, a collector of the first triode Q1 is electrically connected to the driving power supply VDD, an emitter of the first triode Q1 is electrically connected to an emitter of the second triode Q2 and the device 140 to be driven, respectively, and a collector of the second triode Q2 is grounded.

The first transistor Q1 may be an NPN transistor, and the second transistor Q2 may be a PNP transistor. On this basis, when the and gate U2 outputs a high level, the first transistor Q1 is turned on, the second transistor Q2 is turned off, and the voltage of the driving power supply VDD is applied to the gate of the device to be driven 140 so that the device to be driven 140 operates. When the and gate U2 outputs a low level, the first transistor Q1 is turned off, and the second transistor Q2 is turned on, so that the to-be-driven device 140 cannot operate.

Furthermore, by providing the first transistor Q1 and the second transistor Q2, the operation of the device to be driven 140 can be more stable. The reason is that:

since the driving signal output by the MCU110 is a PWM pulse signal, during the operation of the driving unit 130, the first transistor Q1 and the second transistor Q2 are both turned on and off periodically, and when the first transistor Q1 is turned on and the second transistor Q2 is turned off, the driving power VDD supplies power to the gate of the device 140 to be driven through the first transistor Q1, so as to turn on the device 140 to be driven. When the first transistor Q1 is turned off and the second transistor Q2 is turned on, the gate of the device 140 to be driven is grounded through the second transistor Q2, so that the device 140 to be driven is discharged. Since the to-be-driven device 140 includes the equivalent capacitor, by providing the driving unit 130, the to-be-driven device 140 can perform the charging and discharging processes in each working cycle, so that the to-be-driven device 140 can operate more stably.

In addition, in order to stabilize the gate voltage of the device 140 to be driven, the driving circuit 100 further includes a driving resistor Rg, a first end of the driving resistor Rg is electrically connected to the output end of the driving unit 130, and a second end of the driving resistor Rg is electrically connected to the device 140 to be driven.

In addition, in order to alarm when the voltage of the driving power supply VDD is low, as an implementation manner, the driving circuit 100 further includes an alarm unit 150, and the MCU110 is further electrically connected to the output terminal of the driving unit 130 and the alarm unit 150, respectively. The MCU110 is further configured to acquire an output signal of the driving unit 130 and control the alarm unit 150 to alarm when the output signal of the driving unit 130 is a non-driving signal.

That is, when the voltage of the driving power VDD is greater than the threshold, the signal output by the and gate U2 is identical to the signal output by the MCU110, and both signals are PWM pulse signals, and at this time, the first transistor Q1 is also periodically turned on and off, so that the MCU110 can detect the driving signal at the output end of the driving unit 130. If the MCU110 detects that the signal output by the driving unit 130 is a non-driving signal, it indicates that the voltage of the driving power VDD is lower than the threshold, and the MCU110 controls the alarm unit 150 to alarm. As an alternative implementation, the alarm unit 150 may be an audible and visual alarm, such as an LED lamp, which is turned on when alarming; or the alarm unit 150 may also be a display screen or other device to display the alarm signal, or a communication module to send the alarm signal to a background device, and the like, which is not limited herein.

As another possible implementation manner of the present application, please refer to fig. 4, the MCU110 may also be electrically connected to the output end of the under-voltage protection unit 120 and the alarm unit 150, respectively; the MCU110 is further configured to obtain an output signal of the under-voltage protection unit 120, and control the alarm unit 150 to alarm when the output signal of the under-voltage protection unit 120 is a non-driving signal.

Similarly, when the voltage of the driving power VDD is greater than the threshold, the signal output by the and gate U2 is identical to the signal output by the MCU110, and both signals are PWM pulse signals, and the MCU110 can detect the corresponding driving signal. If the MCU110 detects that the signal output by the and gate U2 is a non-driving signal, it indicates that the voltage of the driving power VDD is lower than the threshold, and the MCU110 controls the alarm unit 150 to alarm, which is not described herein.

Through the implementation mode, the driving device can normally work when the driving voltage is larger than the threshold, and the control device stops working when the driving voltage is smaller than the threshold, so that the device is effectively protected. The circuit structure of the under-voltage protection unit 120 is relatively simple, low in cost and convenient and practical.

Based on the foregoing implementation, the present application further provides an electronic device, which includes the driving circuit 100 described above. As an implementation manner, the electronic device may be an air conditioner or the like.

In summary, the present application provides a driving circuit, which includes a device to be driven, a driving unit, an under-voltage protection unit and an MCU, wherein the under-voltage protection unit is electrically connected to the MCU and the driving unit respectively; the under-voltage protection unit is used for transmitting a driving signal to the driving unit when the voltage of the driving power supply VDD is greater than a threshold value so as to enable a device to be driven to work; the undervoltage protection unit is also used for driving the single when the voltage of the driving power supply VDD is less than the threshold value

The element transmits a cut-off signal to stop the operation of the device to be driven. Because the drive circuit that this application provided includes the undervoltage protection unit, consequently when drive power supply VDD's voltage is less than the threshold value, the undervoltage protection unit can transmit the cutoff signal to the drive unit, and then makes and treats that the drive device can not work under the scene that drive voltage is low excessively, has effectively protected and has treated the drive device.

Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

1. A driving circuit (100), wherein the driving circuit (100) comprises a device to be driven (140), a driving unit (130), an under-voltage protection unit (120) and an MCU (110), the under-voltage protection unit (120) is electrically connected with the MCU (110) and the driving unit (130) respectively, the driving unit (130) is electrically connected with the device to be driven (140), the driving unit (130) and the under-voltage protection unit (120) are both connected with a driving power supply (VDD), wherein,

the MCU (110) is used for generating a driving signal;

the under-voltage protection unit (120) is used for transmitting the driving signal to the driving unit (130) when the voltage of the driving power supply (VDD) is greater than a threshold value, so that the device to be driven (140) works;

the under-voltage protection unit (120) is further configured to transmit a cut-off signal to the driving unit (130) when the voltage of the driving power supply (VDD) is less than a threshold value, so that the device to be driven (140) stops working.

2. The driving circuit (100) according to claim 1, wherein the under-voltage protection unit (120) comprises a comparator (U1), and an and gate (U2), a non-inverting input of the comparator (U1) is electrically connected to the driving power supply (VDD), an inverting input of the comparator (U1) is electrically connected to a comparison power supply (VCC), an output of the comparator (U1) is electrically connected to a first input of the and gate (U2), a second input of the and gate (U2) is electrically connected to the MCU (110), and an output of the and gate (U2) is electrically connected to the driving unit (130); wherein the content of the first and second substances,

the comparator (U1) is used for outputting a high level when the voltage of the non-inverting input end is greater than the voltage of the inverting input end;

the comparator (U1) is also used for outputting low level when the voltage of the non-inverting input terminal is less than the voltage of the inverting input terminal;

the AND gate (U2) is used for transmitting the driving signal to the driving unit (130) when the comparator (U1) outputs a high level;

the AND gate (U2) is further used for transmitting a cut-off signal to the driving unit (130) when the comparator (U1) outputs a low level.

3. The driving circuit (100) according to claim 2, wherein the undervoltage protection unit (120) further comprises a first voltage dividing module and a second voltage dividing module, the first voltage dividing module is electrically connected to the driving power supply (VDD) and a non-inverting input terminal of the comparator (U1), respectively, and the first voltage dividing module is grounded; the second voltage division module is respectively electrically connected with the comparison power supply (VCC) and the inverting input end of the comparator (U1), and the second voltage division module is grounded.

4. The driving circuit (100) according to claim 3, wherein the first voltage division module comprises a first resistor (R1) and a second resistor (R2), a first terminal of the first resistor (R1) is electrically connected to the driving power supply (VDD), a second terminal of the first resistor (R1) is electrically connected to a non-inverting input terminal of the comparator (U1) and a first terminal of the second resistor (R2), respectively, and a second terminal of the second resistor (R2) is grounded;

the second voltage division module comprises a third resistor (R3) and a fourth resistor (R4), the first end of the third resistor (R3) is electrically connected with the comparison power supply (VCC), the second end of the third resistor (R3) is respectively electrically connected with the inverting input end of the comparator (U1) and the first end of the fourth resistor (R4), and the second end of the fourth resistor (R4) is grounded.

5. The driver circuit (100) according to claim 1, wherein the driver circuit (100) further comprises an alarm unit (150), and the MCU (110) is further electrically connected to the output terminal of the driver unit (130) and the alarm unit (150), respectively;

the MCU (110) is also used for acquiring an output signal of the driving unit (130), and controlling the alarm unit (150) to alarm when the output signal of the driving unit (130) is a non-driving signal.

6. The driving circuit (100) according to claim 1, wherein the driving circuit (100) further comprises an alarm unit (150), and the MCU (110) is further electrically connected to the output terminal of the under-voltage protection unit (120) and the alarm unit (150), respectively;

the MCU (110) is also used for acquiring an output signal of the undervoltage protection unit (120), and controlling the alarm unit (150) to alarm when the output signal of the undervoltage protection unit (120) is a non-driving signal.

7. The driving circuit (100) according to claim 1, wherein the driving unit (130) comprises a first transistor (Q1) and a second transistor (Q2), bases of the first transistor (Q1) and the second transistor (Q2) are electrically connected to an output terminal of the undervoltage protection unit (120), a collector of the first transistor (Q1) is electrically connected to the driving power supply (VDD), emitters of the first transistor (Q1) are respectively electrically connected to an emitter of the second transistor (Q2), the device (140) to be driven, and a collector of the second transistor (Q2) is grounded.

8. The driver circuit (100) of claim 1, wherein the device to be driven (140) comprises a SiC power switching semiconductor device.

9. The driver circuit (100) according to claim 1, wherein the driver circuit (100) further comprises a driving resistor (Rg), a first end of the driving resistor (Rg) is electrically connected to the output end of the driving unit (130), and a second end of the driving resistor (Rg) is electrically connected to the device to be driven (140).

10. An electronic device, characterized in that the electronic device comprises a driver circuit (100) according to any of claims 1 to 9.