CN103387232A - Synthesis method of silicon carbide porous material - Google Patents
Synthesis method of silicon carbide porous material Download PDFInfo
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- CN103387232A CN103387232A CN2013103278743A CN201310327874A CN103387232A CN 103387232 A CN103387232 A CN 103387232A CN 2013103278743 A CN2013103278743 A CN 2013103278743A CN 201310327874 A CN201310327874 A CN 201310327874A CN 103387232 A CN103387232 A CN 103387232A
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- silicon carbide
- porous material
- carbide porous
- silicon
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Abstract
The invention discloses a synthesis method of a silicon carbide porous material, which comprises the following steps of: mixing and homogenizing silicon dioxide and silicon; adding active carbon and reacting for 5-7 hours at the reaction temperature of 800-1,000 DEG C to obtain silicon carbide; adding the silicon carbide and cyclodextrin into an organic solvent and performing ball milling; and filtering and drying to obtain the silicon carbide porous material. By adopting the synthesis method of the silicon carbide porous material, disclosed by the invention, a silicon carbide porous material with a uniform pore diameter can be obtained, the average pore size is 0.10-0.15 microns, and the porosity is high; when the porosity is 70%, the bending strength of the silicon carbide porous material can reach 30MPa; and the silicon carbide porous material can be applied to various reactions as a catalyst carrier and has great selectivity.
Description
Technical field
The present invention relates to field of porous materials, particularly relate to a kind of synthetic method of silicon carbide porous material.
Background technology
Silicon carbide is commonly called as silicon carbide, and pure silicon carbide is water white crystal, and industrial silicon carbide is different with content because of the kind of impurities, and is pale yellow, green, indigo plant and even black, and transparency is different and different with its purity.The silicon carbide whisker body structure is divided into six sides or rhombohedral α-SiC and cubical β-SiC.α-SiC forms many different variants because the stacking sequence of carbon in its crystalline structure and Siliciumatom is different, has found that more than 70 plant.β-SiC changes α-SiC in time more than 2100 ℃.
Silicon carbide is made porous material for the manufacture of ceramic, and porous ceramics has low density, high permeability, high strength, anticorrosive, good thermal insulation and the performance such as high temperature resistant.Porous ceramic film material can be applicable to a plurality of fields such as metallurgy, chemical industry, the energy, biology, as can be for the manufacture of high temperature gas cleaning device, filter for molten metal, diesel engine vent gas processing, sensor, support of the catalyst and heat exchanger etc.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of synthetic method of silicon carbide porous material, and the silicon carbide porous material property that the method makes is good.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of synthetic method of silicon carbide porous material is provided, comprises that step is:
(1) with silicon-dioxide and silicon mixing homogeneous, then add gac and react 5-7 hour, temperature of reaction is 800-1000 ℃, obtains silicon carbide;
(2) silicon carbide and cyclodextrin are joined ball milling in organic solvent, refilter oven dry, obtain the silicon carbide porous material.
In a preferred embodiment of the present invention, also comprise the carbon monoxide extraction that will generate in step (1) in reaction process.
In a preferred embodiment of the present invention, described in step (2), the mass ratio of silicon carbide and described cyclodextrin is 1:2-3.
In a preferred embodiment of the present invention, described in step (2), bake out temperature is 80-90 ℃.
The invention has the beneficial effects as follows: the synthetic method of silicon carbide porous material of the present invention, the method can obtain the uniform silicon carbide porous material in aperture, mean pore size is 0.10-0.15 μ m, porosity is high, the bending strength of described silicon carbide porous material can reach 30MPa when void content is 70%, can be used for various reactions as support of the catalyst, have very high selectivity.
Embodiment
Below will the technical scheme in the embodiment of the present invention be clearly and completely described, obviously, described embodiment is only a part of embodiment of the present invention, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making all other embodiment that obtain under the creative work prerequisite, belong to the scope of protection of the invention.
Embodiment one:
A kind of synthetic method of silicon carbide porous material is provided, comprises that step is:
(1) with silicon-dioxide and silicon mixing homogeneous, then add gac and reacted 6 hours, temperature of reaction is 900 ℃, and the carbon monoxide that will generate in reaction process extraction, obtains silicon carbide;
(2) 30g silicon carbide and 60g cyclodextrin are joined ball milling in organic solvent, refilter and oven dry under 80 ℃, obtain the silicon carbide porous material.
Embodiment two:
A kind of synthetic method of silicon carbide porous material is provided, comprises that step is:
(1) with silicon-dioxide and silicon mixing homogeneous, then add gac and reacted 7 hours, temperature of reaction is 800 ℃, and the carbon monoxide that will generate in reaction process extraction, obtains silicon carbide;
(2) 10g silicon carbide and 25g cyclodextrin are joined ball milling in organic solvent, refilter and oven dry under 90 ℃, obtain the silicon carbide porous material.
Embodiment three:
A kind of synthetic method of silicon carbide porous material is provided, comprises that step is:
(1) with silicon-dioxide and silicon mixing homogeneous, then add gac and reacted 7 hours, temperature of reaction is 1000 ℃, and the carbon monoxide that will generate in reaction process extraction, obtains silicon carbide;
(2) 20g silicon carbide and 60g cyclodextrin are joined ball milling in organic solvent, refilter and oven dry under 85 ℃, obtain the silicon carbide porous material.
The beneficial effect of the synthetic method of silicon carbide porous material of the present invention is: the method can obtain the uniform silicon carbide porous material in aperture, mean pore size is 0.10-0.15 μ m, porosity is high, the bending strength of described silicon carbide porous material can reach 30MPa when void content is 70%, can be used for various reactions as support of the catalyst, have very high selectivity.
The foregoing is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or equivalent flow process conversion that utilizes description of the present invention to do; or directly or indirectly be used in other relevant technical field, all in like manner be included in scope of patent protection of the present invention.
Claims (4)
1. the synthetic method of a silicon carbide porous material, is characterized in that, comprises that step is:
(1) with silicon-dioxide and silicon mixing homogeneous, then add gac and react 5-7 hour, temperature of reaction is 800-1000 ℃, obtains silicon carbide;
(2) silicon carbide and cyclodextrin are joined ball milling in organic solvent, refilter oven dry, obtain the silicon carbide porous material.
2. the synthetic method of silicon carbide porous material according to claim 1, is characterized in that, also comprises the carbon monoxide extraction that will generate in reaction process in step (1).
3. the synthetic method of silicon carbide porous material according to claim 1, is characterized in that, described in step (2), the mass ratio of silicon carbide and described cyclodextrin is 1:2-3.
4. the synthetic method of silicon carbide porous material according to claim 1, is characterized in that, described in step (2), bake out temperature is 80-90 ℃.
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| CN2013103278743A CN103387232A (en) | 2013-07-31 | 2013-07-31 | Synthesis method of silicon carbide porous material |
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| CN2013103278743A CN103387232A (en) | 2013-07-31 | 2013-07-31 | Synthesis method of silicon carbide porous material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110129114A (en) * | 2019-06-04 | 2019-08-16 | 王保亮 | A kind of Motor Protect |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102303867A (en) * | 2011-08-16 | 2012-01-04 | 浙江大学 | Method for preparing porous silicon carbide by utilizing diatomite |
| CN102659446A (en) * | 2012-03-31 | 2012-09-12 | 中国科学院金属研究所 | Pure SiC membrane tube support and preparation method thereof |
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- 2013-07-31 CN CN2013103278743A patent/CN103387232A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102303867A (en) * | 2011-08-16 | 2012-01-04 | 浙江大学 | Method for preparing porous silicon carbide by utilizing diatomite |
| CN102659446A (en) * | 2012-03-31 | 2012-09-12 | 中国科学院金属研究所 | Pure SiC membrane tube support and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| S.OHSAKI,ET AL.: "Synthesis of β-SiC by the reaction of gaseous SiO with activated carbon", 《KEY ENGINEERING MATERIALS》, vol. 159160, 31 December 1999 (1999-12-31), pages 89 - 94 * |
| 孙莹等: "多孔碳化硅材料的制备及其催化性能", 《无机材料学报》, vol. 18, no. 4, 31 July 2003 (2003-07-31), pages 830 - 836 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110129114A (en) * | 2019-06-04 | 2019-08-16 | 王保亮 | A kind of Motor Protect |
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Application publication date: 20131113 |