CN103396124B - A kind of synthetic method of porous silicon carbide silicon materials - Google Patents
A kind of synthetic method of porous silicon carbide silicon materials Download PDFInfo
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- CN103396124B CN103396124B CN201310327326.0A CN201310327326A CN103396124B CN 103396124 B CN103396124 B CN 103396124B CN 201310327326 A CN201310327326 A CN 201310327326A CN 103396124 B CN103396124 B CN 103396124B
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Abstract
The invention discloses a kind of synthetic method of porous silicon carbide silicon materials, comprising step is: by silicon-dioxide and silicon ball milling certain hour in advance, add activated carbon pyroreaction 3-4 hour again, roasting 1-2 hour in atmosphere again after reaction terminates, obtains silicon carbide solid; Described silicon carbide, kaolin and aluminum oxide are stirred 3-5 hour in organic solvent, dry, dry-pressing hydrostatic profile, then high temperature sintering obtains porous silicon carbide silicon materials.By the way, the synthetic method of porous silicon carbide silicon materials of the present invention, the method can obtain mean pore size and be 0.10-0.15 μm and the porous silicon carbide silicon materials of uniform pore diameter, porosity is high, when void content is 70%, the bending strength of described silicon carbide porous material can reach 30MPa, can be used for, in various reaction, there is very high selectivity as support of the catalyst.
Description
Technical field
The present invention relates to field of porous materials, particularly relate to a kind of synthetic method of porous silicon carbide silicon materials.
Background technology
Silicon carbide is that a kind of carbide serendipitous in laboratory, thought it is adamantine mixture at that time by mistake, therefore be named silicon carbide by American Acheson when within 1891, electric smelting diamond is tested.Silicon carbide has 70 kinds of crystalline forms at least, and alpha-silicon carbide is modal a kind of Polymorphism, is formed under higher than 2000 DEG C of high temperature, there is hexaplanar crystal structure, silicon B-carbide is cubic crystal structure, similar to diamond, then generate at lower than 2000 DEG C.
Silicon carbide makes porous material for the manufacture of ceramic, and porous ceramics has low density, high permeability, high strength, anticorrosive, good thermal insulation and the performance such as high temperature resistant.Porous ceramic film material can be applicable to multiple fields such as metallurgy, chemical industry, the energy, biology, as may be used for manufacturing high temperature gas cleaning device, filter for molten metal, diesel engine vent gas process, sensor, support of the catalyst and heat exchanger etc.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of synthetic method of porous silicon carbide silicon materials, and the porous silicon carbide material property that the method obtains is excellent.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: the synthetic method providing a kind of porous silicon carbide silicon materials, and comprising step is:
(1) by silicon-dioxide and silicon ball milling certain hour in advance, then add activated carbon pyroreaction 3-4 hour, roasting 1-2 hour in atmosphere again after reaction terminates, obtains silicon carbide solid;
(2) described silicon carbide, kaolin and aluminum oxide are stirred 3-5 hour in organic solvent, dry, dry-pressing hydrostatic profile, then high temperature sintering obtains porous silicon carbide silicon materials.
In a preferred embodiment of the present invention, described in step (1), Ball-milling Time is 30-50 minute.
In a preferred embodiment of the present invention, described in step (2), organic solvent is anhydrous methanol, dehydrated alcohol or anhydrous methylene chloride.
In a preferred embodiment of the present invention, described in step (2), the temperature of high temperature sintering is 1000-1200 DEG C.
The invention has the beneficial effects as follows: the synthetic method of porous silicon carbide silicon materials of the present invention, the method can obtain mean pore size and be 0.10-0.15 μm and the porous silicon carbide silicon materials of uniform pore diameter, porosity is high, when void content is 70%, the bending strength of described silicon carbide porous material can reach 30MPa, can be used for, in various reaction, there is very high selectivity as support of the catalyst.
Embodiment
Be clearly and completely described to the technical scheme in the embodiment of the present invention below, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment one:
There is provided a kind of synthetic method of porous silicon carbide silicon materials, comprising step is:
(1) by silicon-dioxide and silicon ball milling 35 minutes in advance, then add activated carbon pyroreaction 4 hours, after reaction terminates, roasting 1 hour in atmosphere again, obtains silicon carbide solid;
(2) described silicon carbide, kaolin and aluminum oxide are stirred 3 hours in anhydrous methylene chloride, dry, dry-pressing hydrostatic profile, then sintering obtains porous silicon carbide silicon materials at 1100 DEG C.
Embodiment two:
There is provided a kind of synthetic method of porous silicon carbide silicon materials, comprising step is:
(1) by silicon-dioxide and silicon ball milling 45 minutes in advance, then add activated carbon pyroreaction 4 hours, after reaction terminates, roasting 2 hours in atmosphere again, obtains silicon carbide solid;
(2) described silicon carbide, kaolin and aluminum oxide are stirred 5 hours in dehydrated alcohol, dry, dry-pressing hydrostatic profile, then sintering obtains porous silicon carbide silicon materials at 1200 DEG C.
Embodiment three:
There is provided a kind of synthetic method of porous silicon carbide silicon materials, comprising step is:
(1) by silicon-dioxide and silicon ball milling 50 minutes in advance, then add activated carbon pyroreaction 3 hours, after reaction terminates, roasting 2 hours in atmosphere again, obtains silicon carbide solid;
(2) described silicon carbide, kaolin and aluminum oxide are stirred 4 hours in anhydrous methanol, dry, dry-pressing hydrostatic profile, then sintering obtains porous silicon carbide silicon materials at 1000 DEG C.
The beneficial effect of the synthetic method of porous silicon carbide silicon materials of the present invention is: the method can obtain mean pore size and be 0.10-0.15 μm and the porous silicon carbide silicon materials of uniform pore diameter, porosity is high, when void content is 70%, the bending strength of described silicon carbide porous material can reach 30MPa, can be used for, in various reaction, there is very high selectivity as support of the catalyst.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize description of the present invention to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present invention.
Claims (4)
1. a synthetic method for porous silicon carbide silicon materials, is characterized in that, comprises step to be:
(1) in encloses container, by silicon-dioxide and silicon ball milling certain hour in advance, then add activated carbon pyroreaction 3-4 hour, roasting 1-2 hour in atmosphere again after reaction terminates, obtains silicon carbide solid;
(2) described silicon carbide solid, kaolin and aluminum oxide are stirred 3-5 hour in organic solvent, dry, dry-pressing hydrostatic profile, then high temperature sintering obtains porous silicon carbide silicon materials.
2. the synthetic method of porous silicon carbide silicon materials according to claim 1, is characterized in that, described in step (1), Ball-milling Time is 30-50 minute.
3. the synthetic method of porous silicon carbide silicon materials according to claim 1, is characterized in that, described in step (2), organic solvent is anhydrous methanol, dehydrated alcohol or anhydrous methylene chloride.
4. the synthetic method of porous silicon carbide silicon materials according to claim 1, is characterized in that, described in step (2), the temperature of high temperature sintering is 1000-1200 DEG C.
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| CN201310327326.0A CN103396124B (en) | 2013-07-31 | 2013-07-31 | A kind of synthetic method of porous silicon carbide silicon materials |
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| CN201310327326.0A CN103396124B (en) | 2013-07-31 | 2013-07-31 | A kind of synthetic method of porous silicon carbide silicon materials |
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| CN103396124A CN103396124A (en) | 2013-11-20 |
| CN103396124B true CN103396124B (en) | 2016-01-20 |
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| CN103787689A (en) * | 2014-02-25 | 2014-05-14 | 江苏威仕结构陶瓷有限公司 | Preparation method of silicon carbide foamed ceramic |
| CN110526713B (en) * | 2019-08-27 | 2022-03-11 | 广东工业大学 | Porous silicon carbide ceramic and preparation method and application thereof |
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| CN101406782B (en) * | 2008-11-06 | 2010-11-03 | 山东理工大学 | Silicon carbide porous ceramic filtering element extrusion apparatus |
| CN101920142B (en) * | 2010-09-30 | 2012-07-25 | 中材高新材料股份有限公司 | Silicon carbide high-temperature ceramic filter pipe and preparation method thereof |
| CN102643111B (en) * | 2012-05-14 | 2013-09-18 | 刘宗蒲 | Preparation method for porous ceramics |
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