CN103377877B - The cleaning method of semiconductor device - Google Patents
The cleaning method of semiconductor device Download PDFInfo
- Publication number
- CN103377877B CN103377877B CN201210129476.6A CN201210129476A CN103377877B CN 103377877 B CN103377877 B CN 103377877B CN 201210129476 A CN201210129476 A CN 201210129476A CN 103377877 B CN103377877 B CN 103377877B
- Authority
- CN
- China
- Prior art keywords
- matting
- cleaning
- cleaning method
- soon
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a kind of cleaning method of semiconductor device, comprising: the first matting aluminum bronze weld pad after etching being performed to azanol based solvent; Perform the second matting of fluorine-based oxide etching agent, to remove metal oxide and metal halide; And the fast row performing deionized water rushes the 3rd matting of cleaning soon.The present invention by performing the second matting of fluorine-based oxide etching agent after the first matting of azanol, the metal oxide on the aluminum bronze weld pad surface after etching and metal halide can be removed, to avoid forming acidic crystalline defect source in a humidity environment in aluminum bronze weld pad, and then avoid forming corrosion to aluminum bronze weld pad and causing semiconductor device failure.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of cleaning method of semiconductor device.
Background technology
In the last part technology of aluminum bronze technology, azanol (HDA) based solvent is generally used for the solvent clean operation after weld pad (PAD) etching.This azanol based solvent being used for solvent clean operation is because this azanol can remove residual photoresist and organic residue effectively.
But, after etching soldering pad technique completes, aluminium halogen compound layer 101(can be formed as shown in Figure 1A at the upper surface of aluminum bronze weld pad 100), aluminium halogen compound is the accessory substance of etching reaction.Subsequently after the ashing process of oxygen, also can form alumina layer 102(as shown in Figure 1B on aluminium halogen compound layer 101).When the azanol solvent used performs solvent clean operation, although can effectively remove photoresist and organic residue, aluminium halogen compound layer 101 and alumina layer 102(cannot be removed as shown in Figure 1 C).But in a humid environment, metal halide but can form acidic crystallization defect source 103(as shown in figure ip).These acidic crystalline defect sources 103 are probably corroded aluminium halogen compound layer 101 and alumina layer 102 and then are formed corrosion to aluminum bronze weld pad 100, and cause semiconductor device failure.
Therefore, need a kind of cleaning method of semiconductor device, to solve problems of the prior art.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in embodiment part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection range attempting to determine technical scheme required for protection.
In order to solve problems of the prior art, the present invention proposes a kind of cleaning method of semiconductor device, comprising: the first matting aluminum bronze weld pad after etching being performed to azanol based solvent; Perform the second matting of fluorine-based oxide etching agent, to remove metal oxide and metal halide; And the fast row performing deionized water rushes the 3rd matting of cleaning soon.
Preferably, the scavenging period of described second matting is 20-60 second.
Preferably, cleaning method adopts groove-type cleaning machine platform to perform.
Preferably, described fluorine-based oxide etching agent is fluorine-based buffered oxide etch agent.
Preferably, the second matting rushes soon in the pre-invasion process of cleaning described fast row to perform, and uses the deionized water solution of described fluorine-based oxide etching agent in described pre-invasion process.
Preferably, the volume by volume concentration of the deionized water solution of described fluorine-based oxide etching agent is 0.05% ~ 0.5%.
Preferably, described fast row rushes at least 3 the fast rows performed after cleaning is also included in described pre-invasion step soon and rushes the cycle soon.
Preferably, described fast row rushes cleaning soon and comprises 4 fast rows and rush the cycle soon.
Preferably, between described first matting and described second matting, also comprise the cleaning step removing described azanol based solvent.
Preferably, after described 3rd matting, also drying steps is comprised.
The present invention by performing the second matting of fluorine-based oxide etching agent after the first matting of azanol, the metal oxide on the aluminum bronze weld pad surface after etching and metal halide can be removed, to avoid forming acidic crystalline defect source in a humidity environment in aluminum bronze weld pad, and then avoid forming corrosion to aluminum bronze weld pad and causing semiconductor device failure.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.In the accompanying drawings,
The cutaway view of the device that Figure 1A-1D obtains for each step of carrying out after existing etching soldering pad step;
Fig. 2 is the flow chart according to one embodiment of the present invention cleaning semiconductor device; And
Fig. 3 is the flow chart according to another execution mode of the present invention cleaning semiconductor device.
Embodiment
Next, by reference to the accompanying drawings the present invention will more intactly be described, shown in the drawings of embodiments of the invention.But the present invention can implement in different forms, and should not be interpreted as the embodiment that is confined to propose here.On the contrary, provide these embodiments will expose thoroughly with complete, and scope of the present invention is fully passed to those skilled in the art.In the accompanying drawings, in order to clear, the size in Ceng He district and relative size may be exaggerated.Same reference numerals represents identical element from start to finish.
Be understood that, when element or layer be called as " ... on ", " with ... adjacent ", " being connected to " or " being coupled to " other element or layer time, its can directly on other element or layer, with it adjacent, connect or be coupled to other element or layer, or the element that can exist between two parties or layer.On the contrary, when element be called as " directly exist ... on ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other element or layer time, then there is not element between two parties or layer.
The invention provides a kind of cleaning method of semiconductor device, this cleaning method mainly carries out for the aluminum bronze weld pad after etching.After the etching technics completing aluminum bronze weld pad, need to clean the photoresist on aluminum bronze weld pad surface and organic residue and halide and oxide.Fig. 2 is the flow chart according to one embodiment of the present invention cleaning semiconductor device, and as shown in Figure 2, cleaning method provided by the invention mainly comprises the following steps:
The first step: perform step 201, performs the first matting of azanol (HDA) based solvent to the aluminum bronze weld pad after etching.First cleaning can remove photoresist and organic residue effectively, and exposes the surface (with reference to Fig. 1 C) of oxide.Exemplarily, pending semiconductor device can be immersed in the solution of azanol, azanol and photoresist and organic residue are reacted, so that both are removed.Soak time can be selected according to actual conditions, is generally 20-80 minute.
Second step: perform step 202, perform the second matting of fluorine-based oxide etching agent, to remove metal oxide and metal halide.Preferably, fluorine-based oxide etching agent can be fluorine-based buffered oxide etch agent (BufferedOxideEtchant, BOE).Owing to the photoresist of oxide surface and organic residue being removed in the first matting, therefore, can effectively remove when execution the first matting oxide and below halide.Exemplarily, the semiconductor device after the first matting process can be immersed in fluorine-based oxide etching agent, fully react to enable this fluorine-based oxide etching agent with metal oxide and metal halide and both are removed.Certainly, fluorine-based oxide etching agent stream can also be used to rinse pending semiconductor device.Preferably, the scavenging period of the second matting is 20-60 second.The time of whole cleaning may be caused excessively to extend if the scavenging period of the second matting is long, may metal oxide and metal halide be removed clean if the scavenging period of the second matting is too short.
3rd step: perform step 203, the fast row performing deionized water rushes cleaning (QuickDumpRinser, QDR), soon to remove the cleaning agent, impurity etc. of semiconductor device surface.Usual Quick drainage cleaning all can comprise the pre-invasion stage before the fast row carrying out deionized water rushes the cycle soon, therefore in order to save the time of whole cleaning, pre-invasion technique can be combined with the second matting.As shown in Figure 3, the second matting 202 rushes cleaning soon at the 3rd matting 203(and fast row) pre-invasion process in perform, wherein, in pre-invasion process, use the deionized water solution of fluorine-based oxide etching agent.The time to whole cleaning can be avoided to have an impact by pre-invasion technique being combined with the second matting.Preferably, the volume by volume concentration of the deionized water solution of fluorine-based oxide etching agent is 0.05% ~ 0.5%.Exemplarily, cleaning provided by the invention can perform on groove-type cleaning machine platform.In the case, pre-invasion technique is combined with the second matting the functional module to groove-type cleaning machine platform can also be avoided to transform, namely only utilize existing groove-type cleaning machine platform just can perform cleaning provided by the invention.
Exemplarily, fast row rushes 3 the fast rows that are more than or equal to performed after cleaning 203 is also included in pre-invasion step soon and rushes the cycle soon, step 203 as shown in Figure 3 '.The cycle of rushing comprises and uses the deionized water that the deionized water of high flow rate rinses semiconductor device surface and rapid blow-down accumulates each fast row soon.Preferably, 4 fast rows can be comprised and rush the cycle soon, after 4 fast rows rush the cycle soon, the fluorine-based oxide etching agent of semiconductor device surface can be removed substantially neatly.
Preferably, between the first matting and the second matting, also comprise the cleaning step removing azanol solvent, step 201 as shown in Figure 3 ', to avoid cleaning agent, subsequent technique is had an impact.
Exemplarily, after the 3rd matting, also comprise drying steps, to remove the moisture of semiconductor device surface, keep semiconductor device dry.
The present invention by performing the second matting of fluorine-based oxide etching agent after the first matting of azanol based compound, the metal oxide on the aluminum bronze weld pad surface after etching and metal halide can be removed, to avoid forming acidic crystalline defect source in a humidity environment in aluminum bronze weld pad, and then avoid forming corrosion to aluminum bronze weld pad and causing semiconductor device failure.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (10)
1. a cleaning method for semiconductor device, is characterized in that, comprising:
Aluminum bronze weld pad after etching is performed to the first matting of azanol based solvent;
Perform the second matting of fluorine-based oxide etching agent, to remove metal oxide and metal halide; And
The fast row performing deionized water rushes the 3rd matting of cleaning soon;
Wherein, before described 3rd matting, comprise the pre-invasion stage, the described pre-invasion stage combines with described second matting, the deionized water solution of the described fluorine-based oxide etching agent of described pre-invasion stage use.
2. cleaning method according to claim 1, is characterized in that, the scavenging period of described second matting is 20-60 second.
3. cleaning method according to claim 1, is characterized in that, cleaning method adopts groove-type cleaning machine platform to perform.
4. cleaning method according to claim 1, is characterized in that, described fluorine-based oxide etching agent is fluorine-based buffered oxide etch agent.
5. cleaning method according to claim 1, is characterized in that, the second matting performs in the pre-invasion process of arranging soon soon rushing cleaning, uses the deionized water solution of described fluorine-based oxide etching agent in described pre-invasion process.
6. cleaning method according to claim 5, is characterized in that, the volume by volume concentration of the deionized water solution of described fluorine-based oxide etching agent is 0.05% ~ 0.5%.
7. cleaning method according to claim 5, is characterized in that, described fast row rushes at least 3 the fast rows performed after cleaning is also included in pre-invasion step soon and rushes the cycle soon.
8. cleaning method according to claim 7, is characterized in that, described fast row rushes cleaning soon and comprises 4 fast rows and rush the cycle soon.
9. cleaning method according to claim 1, is characterized in that, also comprises the cleaning step removing described azanol based solvent between described first matting and described second matting.
10. cleaning method according to claim 1, is characterized in that, after described 3rd matting, also comprise drying steps.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210129476.6A CN103377877B (en) | 2012-04-27 | 2012-04-27 | The cleaning method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210129476.6A CN103377877B (en) | 2012-04-27 | 2012-04-27 | The cleaning method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103377877A CN103377877A (en) | 2013-10-30 |
| CN103377877B true CN103377877B (en) | 2016-04-27 |
Family
ID=49462833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210129476.6A Active CN103377877B (en) | 2012-04-27 | 2012-04-27 | The cleaning method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103377877B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826162B (en) * | 2015-01-07 | 2017-12-08 | 中芯国际集成电路制造(上海)有限公司 | Reduce the method and manufacturing method of semiconductor device of aluminium welding pad fluorine crystallization |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7534752B2 (en) * | 1996-07-03 | 2009-05-19 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
| CA2544209C (en) * | 2003-10-28 | 2011-10-18 | Sachem, Inc. | Cleaning solutions and etchants and methods for using same |
| CN101424887A (en) * | 2007-11-02 | 2009-05-06 | 安集微电子（上海）有限公司 | Semiconductor wafer metal substrate web corrosion prevention liquid and its use method |
| US7585754B2 (en) * | 2008-01-10 | 2009-09-08 | Winbond Electronics Corp. | Method of forming bonding pad opening |
-
2012
- 2012-04-27 CN CN201210129476.6A patent/CN103377877B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103377877A (en) | 2013-10-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1171288C (en) | Removal of photoresist and residue from substrate using supercritical carbon dioxide process | |
| EP1635224A3 (en) | Composition for removing a photoresist residue and polymer residue, and residue removal process using the same | |
| US20020166572A1 (en) | Method for cleaning a semiconductor wafer | |
| TW200717628A (en) | Wafer edge cleaning process | |
| CN100468676C (en) | Method for forming solder pad of semiconductor device | |
| CN107706089A (en) | Wet scrubbing method after aluminum steel dry etching | |
| CN101546727A (en) | Process for Damascus | |
| CN103377877B (en) | The cleaning method of semiconductor device | |
| CN102543683B (en) | Reprocessing method for photoetching process | |
| WO2010120685A8 (en) | Scrubber clean before oxide chemical mechanical polish (cmp) for reduced microscratches and improved yields | |
| CN102074453B (en) | Wafer cleaning method | |
| CN101567300B (en) | Method for removing residue | |
| CN101685273A (en) | Cleanout fluid for removing photoresist layer residue | |
| CN101126909A (en) | Polymer residue removing method in semiconductor process posterior segment process | |
| CN102543674A (en) | Method for removing residue from metal surface | |
| KR20130072664A (en) | Manufacturing method of semiconductor memory device | |
| TWI242805B (en) | Post metal etch cleaning method | |
| CN102085517A (en) | Method and device for cleaning grid oxygen control wafer | |
| US20120288967A1 (en) | Method for processing circuit in package | |
| CN102800575A (en) | Method for removing crystal defects of aluminum liner | |
| US7727900B2 (en) | Surface preparation for gate oxide formation that avoids chemical oxide formation | |
| CN103187239A (en) | Method for removing solder balls on chips | |
| CN1332429C (en) | Method for removing lattice defect in pad area of semiconductor device | |
| JP2009206303A (en) | Semiconductor manufacturing apparatus, and manufacturing method of semiconductor device | |
| CN1725458A (en) | Method for removing lattice defect in pad area of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |