CN103367633A - Tungsten doped and modified phase change material for phase change storage device and application of tungsten doped and modified phase change material for phase change storage device - Google Patents
Tungsten doped and modified phase change material for phase change storage device and application of tungsten doped and modified phase change material for phase change storage device Download PDFInfo
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Abstract
The present invention relates to a kind of phase-change material that the witch culture for phase transition storage is modified, which belongs to microelectronics technology. The general formula of phase-change material of the invention is
, A be and any one of, x, y, z is atomic percent, and 0 ＜ x ＜, 0.65,0.35 ＜ y ＜, 0.8,0.25 ＜ z ＜ 0.95. The phase-change material has reversible transition under the effect of external electrical driving pulses. By the doping content for suitably adjusting tungsten, its physical property can be made to change, obtained material has higher crystallization temperature compared with its undoped materials A, the thermal stability and data retention of phase transition storage are helped to improve, while remain the phase velocity of original material nanosecond. In addition each element in the phase-change material and COMS good compatibility, and its mature preparation process, and can further obtain the phase change memory device unit based on the modified phase-change material of the witch culture.
Description
Technical field
The present invention relates to a kind of phase-change material of microelectronics technology, relate in particular to the mixture phase-change material that a kind of material that is mixed by tungsten forms.
Background technology
The phase change memory technology is a kind of new ideas memory technology of just rising in recent years, it utilizes phase-change material to realize the data storage as storage medium, having broad application prospects, is a focus of present memory research, is considered to promise to be most main flow memory of future generation.As the core of phase transition storage (PCRAM), vital effect has been played in the research and development of phase-change material in the research and development of PCRAM.The lifting of phase-change material performance is the key technology that promotes whole PCRAM device performance.
In the phase-change material, the Ge in the ternary system Ge-Sb-Te material
2Sb
2Te
5, the GeTe in the binary system Ge-Te material and the Sb in the Sb-Te material
2Te
1, Sb
3Te
1And Sb
2Te
3It is typical phase-change material.But in the middle of using, find Ge
2Sb
2Te
5Material has larger variable density when phase transformation, crystallization rate is not good, is generally hundreds of nanosecond (ns), its crystallization temperature is lower in addition, be about 160 ℃, 10 years keep temperature is about 80 ℃, has seriously hindered the extensive use of this material in the phase change memory field.The GeTe crystallization temperature is higher than Ge
2Sb
2Te
5, the height resistance difference is apart from large before and after the phase transformation, and speed can reach several ns during current practice, but its data confining force still can not satisfy the requirement in industrial quarters and military aerospace field, in addition, variable density is larger before and after its crystallization, faces the danger of inefficacy during device operation.Sb
2Te
1, Sb
3Te
1And Sb
2Te
3Be the growth type phase-change material, its phase velocity is very fast, but also has crystallization temperature and kept the lower deficiency of temperature in 10 years.
As seen, the performance of Ge-Sb-Te, Ge-Te and Sb-Te system can not satisfy the needs of using, the application that particularly requires for some specific environment fully.The multiple advantage such as research and develop that new phase-change material makes that device has simultaneously that service speed is fast, high reliability, high density, thermal stability are strong, low-cost or have outstanding properties one-sided the application becomes present urgent problem.
One of key issue of current PC RAM is exactly to improve thermal stability and data confining force.Other elements that mix carry out a kind of method that material modification be can yet be regarded as and addressed this problem.
Summary of the invention
The objective of the invention is for shortcoming of the prior art or deficiency, provide a kind of Heat stability is good, data confining force good, with the phase-change material of COMS process compatible.
To achieve these goals, the present invention adopts following technical scheme:
A kind of phase-change material of the tungsten doping vario-property for phase transition storage, its chemical composition meets chemical general formula W
xA
1-x, wherein A is selected from Ge
2Sb
2Te
5, Sb
yTe
1-yAnd G
eZTe
1-zIn a kind of, x, y, z are atomic percent, and 0＜x＜0.65,0.35＜y＜0.8,0.25＜z＜0.95.
Preferably, in the phase-change material of described tungsten doping vario-property, 0.01≤x≤0.2.
Preferably, in the phase-change material of described tungsten doping vario-property, 0.4≤y≤0.7.
Preferably, in the phase-change material of described tungsten doping vario-property, 0.45≤z≤0.6.
The phase-change material that above-mentioned A representative is mixed without tungsten is such as Ge
2Sb
2Te
5, Sb
yTe
1-yAnd Ge
zTe
1-z
Better, the phase-change material W of described tungsten doping vario-property
xA
1-xBe phase change film material, but its form is not limited to the nano materials such as film.
Better, the phase-change material of described tungsten doping vario-property is the material that has reversible transition under the externally electric driving pulse effect.
Better, the resistance value that the phase-change material of described tungsten doping vario-property utilizes W and the formed chemical bond of Te to improve its amorphous thermal stability and improve its crystalline state.
Better, the phase-change material of described tungsten doping vario-property is by the content of control W element, change simultaneously the ratio of each element in the ratio, Ge-Te of each element among the Ge-Sb-Te or Sb-Te in the ratio of each element can obtain the phase-change storage material of different crystallization temperatures, not syncrystallization activation energy and different melting points.
The preparation method of the phase-change material of the tungsten doping vario-property that the present invention is above-mentioned comprises the whole bag of tricks such as magnetron sputtering method, chemical vapour deposition technique, atomic layer deposition method, pulsed laser deposition, electron-beam vapor deposition method, galvanoplastic.Wherein, it is relatively more flexible to prepare phase-change thin film with magnetron sputtering method, can use the method for W, Ge, Sb, Te target co-sputtering, realizes the adjusting of each component by controlling each target position power, the method of W target and A alloys target cosputtering can also be adopted, also the W that makes can be adopted
xA
1-xThe single target sputter of alloys target realizes, these methods can be used for preparing according to the proportioning of each composition in the chemical composition general formula phase-change material of tungsten doping vario-property of the present invention.
Phase-change storage material provided by the present invention can be realized reversible transition under the effect of electric pulse, arranged before and after the phase transformation dividing of high low resistance state, and difference is larger, is convenient to external circuit and differentiates like a cork " 0 " or " 1 ".It is comparatively desirable phase-change storage material.
Phase-change storage material of the present invention is at Ge
2Sb
2Te
5, Sb
yTe
1-yOr Ge
zTe
1-zThe basis on, suitably mix W unit and usually prepare high performance phase-change thin film.
Phase-change storage material W of the present invention
xA
1-xMature preparation process, wherein each kind of element and COMS's is compatible good.
W of the present invention
xA
1-xPhase-change storage material utilizes the W-Te key that exists in the material to change the physical property of this material, and its thermal stability is greatly improved.
W of the present invention
xA
1-xPhase-change storage material can be realized by outside electric pulse the reversible transition of high low resistance state, and resistance difference realizes memory function before and after utilizing.
Phase-change storage material W of the present invention
xA
1-x, inherited the advantage of phase-change material A, have less change in volume before and after its phase transformation simultaneously, can at high temperature more stably work.
The present invention can make its physical property change, the phase-change material W that obtains by suitably regulating the doping content of tungsten
xA
1-xCompare with its unadulterated materials A, have higher crystallization temperature, help to improve thermal stability and the data confining force of phase transition storage, keeping simultaneously the phase velocity of original material nanosecond.
The present invention also provides a kind of phase change memory device unit of the phase-change material based on above-mentioned tungsten doping vario-property.
This phase change memory device unit shows the characteristic of reversible transition under the potential pulse of nanosecond, adopt the phase-change material of tungsten doping vario-property of the present invention can be under the electricity impulse action that reduces rapid phase transition, can obviously distinguish " 0 " and " 1 " before and after the phase transformation.And this phase change memory device unit is under short, lower potential pulse, and stably repeated work more than 1000 times, and high low-resistance value almost remains unchanged, and has preferably reliability.
Description of drawings
Fig. 1 is different W content W
x(Ge
2Sb
2Te
5)
1-xThe phase-change thin film square resistance varies with temperature relation curve;
Fig. 2 is the Arrhenius curve of 1# sample among the embodiment 1; Illustration be among the embodiment 1 the 1# sample under different specified temps, the variation relation curve of electrical resistance time;
Fig. 3 is the Arrhenius curve of 3# sample among the embodiment 1; Illustration be among the embodiment 1 the 3# sample under different specified temps, the variation relation curve of electrical resistance time;
Fig. 4 is different W content W
x(Sb
2Te)
1-xThe phase-change thin film square resistance varies with temperature relation curve;
Fig. 5 is the Arrhenius curve of a# sample among the embodiment 2; Illustration be among the embodiment 2 the a# sample under different specified temps, the variation relation curve of electrical resistance time;
Fig. 6 is the Arrhenius curve of e# sample among the embodiment 2; Illustration be among the embodiment 2 the e# sample under different specified temps, the variation relation curve of electrical resistance time;
Fig. 7 is based on the resistance-voltage curve of the T-shaped structural phase transition memory cell of e# sample among the embodiment 2;
Fig. 8 is based on the cycle life curve of the T-shaped structural phase transition memory cell of e# sample among the embodiment 2.
Embodiment
Further set forth the present invention below in conjunction with specific embodiment, should be understood that these embodiment only are used for explanation the present invention and are not used in restriction protection scope of the present invention.
1, utilizes magnetron sputtering W and Ge
2Sb
2Te
5The silicon substrate of double target co-sputtering method after thermal oxidation prepares W
x(Ge
2Sb
2Te
5)
1-xFilm, wherein during sputter, the base vacuum degree is 2.0 * 10
-4Pa, the ar pressure during sputter are 0.22Pa.Ge
2Sb
2Te
5The sputtering power of target is locked as direct current (DC) 50W, changes the sputtering power of W target, is respectively radio frequency (RF) 0W, 20W, 30W, 50W, obtains phase-change thin film 1#, 2#, 3#, the 4# of four kinds of different W doping contents.The parameter of these four kinds of thin film phase change materials is as shown in table 1 below:
Table 1
2, will grow on the oxidation sheet and be not the W of annealing in process
x(Ge
2Sb
2Te
5)
1-xThin-film material is done the In-situ resistance test, as shown in Figure 1.Can find out, not mix the Ge of W
2Sb
2Te
5Crystallization temperature is 171 ℃.After mixing the W element, the phase-change thin film crystallization temperature is improved significantly, and wherein the crystallization temperature of 4# sample is up to 253 ℃, and visible thermal stability is significantly improved.Simultaneously, second-order phase transition is suppressed, and namely the second-order phase transition temperature illustrates that along with the doping content of W increases and increases the face-centered cubic that is used for storage becomes more stable mutually.Crystalline resistance is the variation tendency of increase along with the doping content increase of W in addition, and this power-dissipation-reduced for device plays crucial effect.
3. confining force is that phase-change material causes and closes an important characteristic, be weigh this phase-change material one of can direct applied important parameter.According to the activation energy (E of Arrhenius equation to 1# and 3# sample
a) and kept temperature (T in 10 years
10y) calculate that the result is respectively as shown in Figures 2 and 3.
Specific practice is: at first will grow on the oxidation sheet and the 1# that does not do annealing in process and 3# sample do In-situ resistance test under the different steady temperatures, record resistance-time graph (shown in the illustration among Fig. 2 and Fig. 3) is then won the out-of-service time (out-of-service time is defined as the time when the normalization resistance value drops to 0.5) under the steady temperature here from resistance-time graph; Utilize at last Arrhenius equation to E
aAnd T
10yCalculate, obtain the result as shown in Figures 2 and 3.
We can obtain the E of 1# sample from Fig. 2
aBe 2.9eV, T
10yIt is 89 ℃.We can obtain the E of 3# sample from Fig. 3
aBe 3.2eV, T
10yIt is 113 ℃.As seen the crystallization activation energy of 3# sample and 10 years keep temperature to be higher than the 1# sample, and namely W mixes so that phase-change material Ge
2Sb
2Te
5The crystallization activation energy and kept temperature to raise in 10 years.Illustrate that the W doping can improve the hold facility of phase-change material, thereby phase-change material can at high temperature more stably be worked.
1, utilizes magnetron sputtering W and Sb
2The silicon substrate of Te double target co-sputtering method after thermal oxidation prepares W
x(Sb
2Te)
1-xFilm, wherein during cosputtering, the base vacuum degree is 2.0 * 10
-4Pa, the ar pressure during sputter are 0.22Pa.Sb
2The sputtering power of Te target is locked as radio frequency (RF) 20W, changes the sputtering power of W target, is respectively radio frequency (RF) 0W, 4W, 5W, 6W, 7W, 10W, obtains phase-change thin film a#, b#, c#, d#, e#, the f# of 6 kinds of different W doping contents.The parameter of these six kinds of thin film phase change materials is as shown in table 2 below:
Table 2
2, will grow on the oxidation sheet and be not the W of annealing in process
x(Sb
2Te)
1-xThin-film material is done the In-situ resistance test, as shown in Figure 4.Can find out, not mix the Sb of W
2The Te crystallization temperature is 144 ℃.After mixing the W element, the phase-change thin film crystallization temperature is improved significantly, and wherein the crystallization temperature of f# film is up to 241 ℃, and visible thermal stability is significantly improved.Crystalline resistance is the variation tendency of increase along with the doping content increase of W in addition, and this power-dissipation-reduced for device plays crucial effect.
3. to the E of a# and e# film sample
aAnd T
10yCalculate that the result respectively as shown in Figure 5 and Figure 6.Specific practice is as described among the embodiment 1 the 3rd.We can obtain the E of a# sample from Fig. 5
aBe 1.7eV, T
10yIt is 33 ℃.We can obtain the E of e# sample from Fig. 6
aBe 3.0eV, T
10yIt is 124 ℃.As seen the crystallization activation energy of e# sample and 10 years keep temperature to be higher than the a# sample, and namely W mixes so that phase-change material Sb
2The crystallization activation energy of Te and 10 years maintenance temperature raise.The W that W mixes and obtains is described
x(Sb
2Te)
1-xFilm can improve the hold facility of phase-change material, thereby phase-change material can at high temperature more stably be worked.
4. utilize 0.13 μ m CMOS technique that the e# sample preparation is become the phase change memory device of T-shaped structure, and it is carried out the test of electric property.Fig. 7 is the resistance-voltage tester result of this device cell, under the potential pulse of 20 nanoseconds, device cell shows the characteristic of reversible transition, erasing voltage and write voltage and be respectively 1V and 2.7V, high low-resistance value differs 46 times, this explanation e# sample can be under the electricity impulse action that reduces rapid phase transition, can obviously distinguish " 0 " and " 1 " before and after the phase transformation.Fig. 8 is the cycle life test of this device cell, is not difficult to find out from figure, and under short, lower potential pulse, device is repeated work more than 1000 times stably, and high low-resistance value almost remains unchanged, and has preferably reliability.
1, utilizes magnetron sputtering W and Ge
zTe
1-zThe silicon substrate of double target co-sputtering method after thermal oxidation prepares W
x(Ge
zTe
1-z)
1-xFilm, W
x(Ge
zTe
1-z)
1-xMiddle x=0,0.07,0.11, z=0.5's.Wherein during cosputtering, the base vacuum degree is 2.0 * 10
-4Pa, the ar pressure during sputter are 0.22Pa.Ge
zTe
1-zThe sputtering power of target is locked as radio frequency (RF) 50W, changes the sputtering power of W target, is respectively radio frequency (RF) 0W, 6W, 10W, obtains phase-change thin film A#, B#, the C# of 3 kinds of different W doping contents.The parameter of these three kinds of thin film phase change materials is as shown in table 3 below:
Table 3
2, will grow on the oxidation sheet and be not the W of annealing in process
x(Ge
zTe
1-z)
1-xThin-film material is done the In-situ resistance test, can find out, does not mix the Ge of W
zTe
1-zCrystallization temperature is low.After mixing the W element, W
x(Ge
zTe
1-z)
1-xThe phase-change thin film crystallization temperature is improved significantly, and the thermal stability of as seen mixing the phase-change thin film behind the W element is significantly improved.Crystalline resistance is the variation tendency of increase along with the doping content increase of W in addition, and this power-dissipation-reduced for device plays crucial effect.
3. to the E of A#, B# and C# film sample
aAnd T
10yCalculate that specific practice is as described among the embodiment 1 the 3rd.As seen the crystallization activation energy of B# and C# sample and 10 years keep temperature to be higher than the A# sample, and namely W mixes so that the crystallization activation energy of phase-change material and kept the temperature to raise in 10 years.The W that W mixes and obtains is described
x(Ge
zTe
1-z)
1-xCan improve the hold facility of phase-change material, thereby phase-change material can at high temperature more stably be worked.
4. utilize 0.13 μ m CMOS technique that the C# sample preparation is become the phase change memory device of T-shaped structure, and it is carried out the test of electric property.Under the potential pulse of tens nanoseconds, device cell shows the characteristic of reversible transition, illustrate the C# sample can be under the electricity impulse action that reduces rapid phase transition, can obviously distinguish " 0 " and " 1 " before and after the phase transformation.Be not difficult to find out that from the test of the cycle life of this device cell under short, lower potential pulse, device is repeated work more than 1000 times stably, and high low-resistance value remains unchanged almost, have preferably reliability.
1, utilizes magnetron sputtering W and Sb
0.4Te
0.6The silicon substrate of double target co-sputtering method after thermal oxidation prepares W
x(Sb
0.4Te
0.6)
1-xFilm, x=0.15 wherein, wherein during cosputtering, the base vacuum degree is 2.0 * 10
-4Pa, the ar pressure during sputter are 0.22Pa.Sb
2The sputtering power of Te target is locked as radio frequency (RF) 20W, and the sputtering power of W target is radio frequency (RF) 15W, cosputtering 40 minutes, and obtaining thickness is the phase-change thin film of the W doping of 135nm.
2, will grow on the oxidation sheet and be not the W of annealing in process
x(Sb
0.4Te
0.6)
1-xThin-film material is done the In-situ resistance test, can find out that after mixing the W element, the phase-change thin film crystallization temperature is improved significantly, and visible thermal stability is significantly improved.Crystalline resistance is the variation tendency of increase along with the doping content increase of W in addition, and this power-dissipation-reduced for device plays crucial effect.
3. to the E of the film sample of present embodiment
aAnd T
10yCalculate that specific practice is as described among the embodiment 1 the 3rd.As seen the film sample of present embodiment and phase-change material Sb
0.4Te
0.6Compare, its crystallization activation energy and 10 years maintenance temperature raise.The W that W mixes and obtains is described
x(Sb
0.4Te
0.6)
1-xFilm can improve the hold facility of phase-change material, thereby phase-change material can at high temperature more stably be worked.
4. utilize 0.13 μ m CMOS technique that the film sample of present embodiment is prepared into the phase change memory device of T-shaped structure, and it is carried out the test of electric property.Under the potential pulse of tens nanoseconds, device cell shows the characteristic of reversible transition, high low-resistance value differs tens times, the film sample of this explanation present embodiment can be under the electricity impulse action that reduces rapid phase transition, can obviously distinguish " 0 " and " 1 " before and after the phase transformation.Be not difficult to find out that from the test of the cycle life of this device cell under short, lower potential pulse, device is repeated work more than 1000 times stably, and high low-resistance value remains unchanged almost, have preferably reliability.
Embodiment 5
1, utilizes magnetron sputtering W and Ge
zTe
1-zThe silicon substrate of double target co-sputtering method after thermal oxidation prepares W
x(Ge
zTe
1-z)
1-xFilm, W
x(Ge
zTe
1-z)
1-xMiddle x=0.1, z=0.6's.Wherein during cosputtering, the base vacuum degree is 2.0 * 10
-4Pa, the ar pressure during sputter are 0.22Pa.Ge
zTe
1-zThe sputtering power of target is locked as radio frequency (RF) 50W, and the sputtering power of W target is radio frequency (RF) 8W, and cosputtering 30 minutes obtains thickness and be the phase-change thin film W that the W of the present embodiment of 162nm mixes
x(Ge
zTe
1-z)
1-x(wherein x=0.1, z=0.6).
2, will grow on the oxidation sheet and be not the W of annealing in process
x(Ge
zTe
1-z)
1-x(wherein x=0.1, z=0.6) thin-film material is done the In-situ resistance test, can find out and mix after the W element, W
x(Ge
zTe
1-z)
1-x(wherein x=0.1, z=0.6) phase-change thin film crystallization temperature is improved significantly, and the thermal stability of as seen mixing the phase-change thin film behind the W element is significantly improved.Crystalline resistance is the variation tendency of increase along with the doping content increase of W in addition, and this power-dissipation-reduced for device plays crucial effect.
3. to the E of the film sample of present embodiment
aAnd T
10yCalculate that specific practice is as described among the embodiment 1 the 3rd.As seen W mixes so that the crystallization activation energy of phase-change material and 10 years maintenance temperature raise.The W that W mixes and obtains is described
x(Ge
zTe
1-z)
1-x(wherein x=0.1, z=0.6) can improve the hold facility of phase-change material, thereby phase-change material can at high temperature more stably be worked.
4. utilize 0.13 μ m CMOS technique that the film sample of present embodiment is prepared into the phase change memory device of T-shaped structure, and it is carried out the test of electric property.Under the potential pulse of tens nanoseconds, device cell shows the characteristic of reversible transition, illustrate the film sample of present embodiment can be under the electricity impulse action that reduces rapid phase transition, can obviously distinguish " 0 " and " 1 " before and after the phase transformation.Be not difficult to find out that from the test of the cycle life of this device cell under short, lower potential pulse, device is repeated work more than 1000 times stably, and high low-resistance value remains unchanged almost, have preferably reliability.
Description of the invention and application are illustrative, are not to want with scope restriction of the present invention in the above-described embodiments.Distortion and the change of above-mentioned disclosed embodiment are possible, and the various parts of the replacement of embodiment and equivalence are known for the person of ordinary skill of the art.Those skilled in the art are noted that in the situation that does not break away from spirit of the present invention or substantive characteristics, and the present invention can be with other forms, structure, layout, ratio, and realize with other substrates, material and parts.In the situation that does not break away from the scope of the invention and spirit, can carry out other distortion and change to above-mentioned disclosed embodiment.
Claims (10)
1. phase-change material that is used for the tungsten doping vario-property of phase transition storage, its chemical composition meets chemical general formula W
xA
1-x, wherein A is selected from Ge
2Sb
2Te
5, Sb
yTe
1-yAnd Ge
zTe
1-zIn a kind of, x, y, z are atomic percent, and 0＜x＜0.65,0.35＜y＜0.8,0.25＜z＜0.95.
2. the phase-change material of tungsten doping vario-property as claimed in claim 1 is characterized in that, 0.01≤x≤0.2.
3. the phase-change material of tungsten doping vario-property as claimed in claim 1 is characterized in that, 0.4≤y≤0.7.
4. the phase-change material of tungsten doping vario-property as claimed in claim 1 is characterized in that, 0.45≤z≤0.6.
5. the phase-change material of tungsten doping vario-property as claimed in claim 1 is characterized in that, the phase-change material of described tungsten doping vario-property is the material that has reversible transition under the externally electric driving pulse effect.
6. the phase-change material of tungsten doping vario-property as claimed in claim 1 is characterized in that, the phase-change material of described tungsten doping vario-property is phase change film material.
7. the phase-change material of tungsten doping vario-property as claimed in claim 1 is characterized in that, the resistance value that the phase-change material of described tungsten doping vario-property utilizes W and the formed chemical bond of Te to improve its amorphous thermal stability and improve its crystalline state.
8. the phase-change material of tungsten doping vario-property as claimed in claim 1, it is characterized in that, the phase-change material of described tungsten doping vario-property is by the content of control W element, changes simultaneously the ratio of each element among the ratio of each element in the ratio, Ge-Te of each element among the Ge-Sb-Te or the Sb-Te and obtains the phase-change storage material of different crystallization temperatures, not syncrystallization activation energy and different melting points.
9. such as the phase-change material of the arbitrary described tungsten doping vario-property of claim 1-8, it is characterized in that the phase-change material of described tungsten doping vario-property adopts magnetron sputtering method, chemical vapour deposition technique, atomic layer deposition method, pulsed laser deposition, electron-beam vapor deposition method or galvanoplastic to make.
10. phase change memory device unit based on the phase-change material of the arbitrary described tungsten doping vario-property of claim 1-9.
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| CN102800808A (en) * | 2012-09-11 | 2012-11-28 | 中国科学院上海微系统与信息技术研究所 | Antimony-rich high-speed phase change material for phase change memory, method for preparing antimony-rich high-speed phase change material and application of material |
| CN104716260A (en) * | 2015-03-24 | 2015-06-17 | 中国科学院上海微系统与信息技术研究所 | Sb-Te-Cr phase-change material, phase-change storage unit and manufacturing method thereof |
| CN107768516A (en) * | 2016-08-22 | 2018-03-06 | 中国科学院上海微系统与信息技术研究所 | Y Sb Te phase-change materials, phase-changing memory unit and preparation method thereof |
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| CN104716260A (en) * | 2015-03-24 | 2015-06-17 | 中国科学院上海微系统与信息技术研究所 | Sb-Te-Cr phase-change material, phase-change storage unit and manufacturing method thereof |
| CN107768516A (en) * | 2016-08-22 | 2018-03-06 | 中国科学院上海微系统与信息技术研究所 | Y Sb Te phase-change materials, phase-changing memory unit and preparation method thereof |
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