CN100590903C - Si-Te-Sb series phase-change thin film material for phase-change memory - Google Patents
Si-Te-Sb series phase-change thin film material for phase-change memory Download PDFInfo
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- CN100590903C CN100590903C CN200810103803A CN200810103803A CN100590903C CN 100590903 C CN100590903 C CN 100590903C CN 200810103803 A CN200810103803 A CN 200810103803A CN 200810103803 A CN200810103803 A CN 200810103803A CN 100590903 C CN100590903 C CN 100590903C
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- phase change
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Abstract
The invention provides a Si-Te-Sb series phase change film material for a phase change memory, which belongs to microelectronics field. At present, Ge2Te5Sb2 material has lower crystallization temperature (about 165 DEG G) and faces to a danger of data loss. The Si-Te-Sb memory material for the phase change memory has a general formula as follows: SiaTebSb100-(a+b), therein, 20<=a<=b, 20<=b<48. The material has higher crystallization temperature, better thermal stability and more stronger data keeping ability, at the same time, has even crystal phase structure and nanometer-sized grain size, and has better reversible phase change ability, at the same time, improves fatigue property.
Description
Technical field
What the present invention relates to is the storage medium that a kind of microelectronics technology is used for phase transition storage, and concrete is a kind of phase change film material of being made up of the mixture of silicon-tellurium-antimony.
Background technology
Phase transition storage is to utilize phase change film material to realize having broad application prospects a kind of memory of storage as storage medium, is a focus of present memory research.Because of used phase change film material mostly contains chalcogen, so be called the chalcogenide compound random asccess memory again, be based on memory (the Ovshinsky S R.Reversible electrical switching phenomena indiscovered structure.Phys Rev Lett of S.R.Ovshinsky in the Ao Fuxinsiji electronic effect of late 1960s proposition, 1968,21 (20): 1450), be considered to most promising high speed of future generation, high density, low power consumption memories.The storage of chalcogenide compound random asccess memory is to utilize phase-change material externally the amorphous that produces down of the effect of energy and the reversible transition between the polycrystalline realize, chalcogenide compound is a high-impedance state when amorphous state, when the polycrystalline attitude is low resistance state, and the resistance difference of phase transition storage when utilizing chalcogenide compound to change between amorphous and polycrystalline just realizes storage.
In the research and development of phase transition storage, the quality of sulfur series compound phase-change material determines a key factor of phase transition storage performance quality beyond doubt, therefore, the research of phase-change storage material has been subjected to paying close attention to widely, and has obtained application the nineties in last century in business-like DVD (digital versatile disk) video disc.So just at present, what gain public acceptance also is that the maximum phase-change material of research is Ge-Te-Sb, wherein with Ge
2Te
5Sb
2The most popular.Though based on Ge
2Te
5Sb
2Memory data can keep at normal temperatures 10 years, but because the crystallization temperature of material lower (being about 165 degree), still be faced with dangerous of data loss, just become the problem that urgently will solve at present with data holding ability that improves phase transition storage and the thermal stability that improves phase-change material so improve crystallization temperature.Simultaneously, the size of the uniformity of crystal phase and crystallite dimension also is to weigh phase-change material excellent performance whether major criterion.
In sum, ripe relatively Ge-Te-Sb series phase change film material and do not mean that to be exactly the optimal selection of phase-change memory material.So widen the research range of phase-change material, explore the novel phase-change material that is applicable to phase transition storage and just seem very necessary, also only in this way could bring into play the superiority of phase transition storage to greatest extent.This starting point also of the present invention just.
Summary of the invention
The objective of the invention is to shortcoming and defect, a kind of phase change film material that can be used for phase transition storage is provided at current material.The storage medium that is provided is the material that a kind of effect of externally energy can realize reversible transition between high-impedance state and the low resistance state down, described external energy can drive for heat, electron beam drives, electric pulse drives or laser pulse one or more in driving, and can realize that in the front and back of reversible transition resistance value 2 times of variations to the several magnitude scope, is a kind of ideal material that can be used for phase transition storage.This material has higher relatively crystallization temperature, thermal stability and stronger data holding ability preferably, also have uniform crystal phase structure and nano level crystallite dimension simultaneously, when having improved fatigue properties, have reversible transition ability preferably again.
A kind of silicon-tellurium-antimony storage medium that is used for phase transition storage provided by the invention, the composition general formula is Si
aTe
bSb
100-(a+b), wherein 20≤a≤60,20≤b＜48 are mixtures of a kind of silicon, tellurium and antimony, the preparation method is various.Si-Te-Sb series phase change film material can adopt the method preparation of many target co-sputterings, the target that various elements are corresponding different respectively, and the final component of material can be controlled by apply different power on each target with thickness.Si-Te-Sb series phase change film material also can adopt the mode of sputter alloys target to prepare, at first need to prepare the alloy target material of corresponding composition, the phase change film material of this kind composition just can be prepared by the alloy target material of sputter identical component like this.In addition, can also adopt the method for some other deposit film, as the elements corresponding material is carried out coevaporation, perhaps employing evaporation, electron beam evaporation Si-Te-Sb alloy prepare the Si-Te-Sb series phase change film material of various components etc.
The Si-Te-Sb series phase change film material that is used for phase transition storage of the present invention can by external energy be used for realizing reversible transition between high-impedance state and the low resistance state, utilize before and after reversible the variation difference of resistivity to carry out storage.
The Si-Te-Sb series phase change film material that is used for phase transition storage of the present invention is reversible variations front and back under the effect of energy externally, and material has different crystal structures, and the reversible transition between amorphous and the polycrystalline can take place.The grain size of the Si-Te-Sb of polycrystalline attitude series phase-change material is very even, and crystallite dimension is very little all in 10nm, has indicated that material has good fatigue properties.
External energy of the present invention is that heat drives, electron beam drives, electric pulse drives or laser pulse drives.
The Si-Te-Sb series phase change film material that is used for phase transition storage of the present invention can be applicable to various types of employing Transformation Principle and carries out memory storing, comprises the multi-medium data CD of laser pulse driving or memory of electric pulse driving or the like.
Description of drawings
Fig. 1 is phase change film material Si of the present invention
4Te
3Sb
2The X ray diffracting spectrum of (b) after (a) and 300 degree were annealed 1 hour under noncrystalline state respectively.
Fig. 2 is phase change film material Si of the present invention
4Te
3Sb
2Carrying out current density respectively in transmission electron microscope (TEM) is 100pA/cm
2The light field pattern picture (a) of about 10 minutes original position electron beam irradiation and the hot platform of original position are heated to the light field pattern picture (b) behind 300 degree.
Fig. 3 is phase change film material Si of the present invention
4Te
3Sb
2With Ge commonly used
2Te
5Sb
2Thin-film material powers up the resistivity that device records in situ and the relation curve of annealing temperature by the original position in the ESEM.
Embodiment
1, the method that adopts many target co-sputterings with silicon, tellurium and three relatively independent targets of antimony respectively on the quartz substrate of not having orientation, transmission electron microscope carries on the net carbon supporting film and prepare the Si-Te-Sb phase change film material on the silicon substrate after the thermal oxidation.Ar pressure during sputter is 0.2Pa, and the power on silicon target, tellurium target and the antimony target is respectively 13 watts of 340 watts of radio frequencies, 12 watts of direct currents and direct currents, can control the thickness of the phase change film material of preparing by the control sputtering time.The X spectrofluorimetry shows that the composition of material is substantially near ideal composition Si
4Te
3Sb
2Because the particularity that transmission electron microscope requires thickness of sample, in the process of implementing, choosing of film thickness is controlled between the 30nm-100nm.Selected film thickness is 30nm in the middle of present embodiment, thickness is that the various aspects such as uniformity of the transformation behavior that thin-film material showed, crystallization temperature and crystal phase of 100nm are all consistent with the thick thin-film material of 30nm, it is considered herein that thickness is little to the influence of effect within this scope.
What 2, will obtain is plated in Si on the quartz substrate
4Te
3Sb
2Phase change film material is in the protection of high pure nitrogen atmosphere, and cycle annealing is 1 hour under the temperature of 300 degree.Figure 1 shows that the X ray diffracting spectrum of sample before and after the annealing in process, as seen from the figure, than under the low temperature thermal oxidation, material is typical non crystalline structure, corresponding higher Resistance states; And when annealing temperature is higher, Si
4Te
3Sb
2Phase change film material is changed into by non crystalline structure and has more low-resistance polycrystalline structure.So under certain annealing temperature, the material of this component exists transformation behavior.
The transmission electron microscope that is plated in that 3, will make carries Si on the net carbon supporting film
4Te
3Sb
2Phase change film material carries out the electron beam irradiation of original position and the hot platform heating experiment of original position respectively in transmission electron microscope (TEM).Be illustrated in figure 2 as phase change film material Si of the present invention
4Te
3Sb
2Carrying out current density respectively in transmission electron microscope (TEM) is 100pA/cm
2The light field pattern picture (a) of about 10 minutes original position electron beam irradiation and the hot platform of original position are heated to the light field pattern picture (b) behind 300 degree.As seen from the figure, no matter be that electron beam drives or the heat driving all can induce phase-change material by the transformation of amorphous state to the polycrystalline attitude.The Si of polycrystalline attitude
4Te
3Sb
2The crystallite dimension of phase change film material thisly perfectly evenly means that also material of the present invention will can have original performance in phase transition storage being close on the grain size all in 10nm.
4, Si-Te-Sb series phase change film material of the present invention is carried out resistivity measurement, test result is illustrated in figure 3 as phase change film material Si of the present invention
4Te
3Sb
2With Ge commonly used
2Te
5Sb
2Thin-film material powers up the resistivity that device records in situ and the relation curve of annealing temperature by the original position in the ESEM.Below 160 degree, all films are in the amorphous state that resistance is high-impedance state, and along with the continuous increase of temperature, film begins crystallization, and meanwhile the resistivity of film just begins to descend, and changes the polycrystalline attitude that resistance is in low resistance state into until film.This process is utilizing different outside energy to make phase change film material between high-impedance state and low resistance state reversible transition take place just in the middle of the practical application.As seen from the figure, Si
4Te
3Sb
2Film contrast Ge commonly used
2Te
5Sb
2Film has higher crystallization temperature (being about 220 degree), therefore has better stability and outstanding data holding ability.
Claims (2)
1, a kind of Si-Te-Sb series phase change film material that is used for phase transition storage is characterized in that described storage medium is the mixture of silicon-tellurium-antimony, and the composition general formula is Si
aTe
bSb
100-(a+b), 20≤a≤60,20≤b＜48 wherein.
2, the Si-Te-Sb series phase change film material that is used for phase transition storage according to claim 1 is characterized in that it is Si that described storage medium is formed general formula
aTe
bSb
100-(a+b), 20≤a≤60,20≤b＜48, and a wherein, the ratio of b is Si
4Te
3Sb
2
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| CN200810103803A CN100590903C (en) | 2008-04-11 | 2008-04-11 | Si-Te-Sb series phase-change thin film material for phase-change memory |
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| CN200810103803A CN100590903C (en) | 2008-04-11 | 2008-04-11 | Si-Te-Sb series phase-change thin film material for phase-change memory |
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| CN100590903C true CN100590903C (en) | 2010-02-17 |
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Families Citing this family (4)
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| CN101818294B (en) * | 2010-04-28 | 2012-03-21 | 中国科学院上海微系统与信息技术研究所 | Nanometer composite phase-change material, preparation method and optimization method |
| CN102110773A (en) * | 2010-11-09 | 2011-06-29 | 中国科学院上海微系统与信息技术研究所 | Silicon antimony tellurium composite phase-change material |
| CN102130298B (en) * | 2011-01-19 | 2013-05-01 | 中国科学院上海微系统与信息技术研究所 | Si-Sb-Te phase change material for phase change storage |
| CN102185106B (en) * | 2011-04-22 | 2013-05-22 | 中国科学院上海微系统与信息技术研究所 | Phase change memory material and preparation method thereof |
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