CN103367087B - 自动化离子束空闲 - Google Patents

自动化离子束空闲 Download PDF

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Publication number
CN103367087B
CN103367087B CN201310104256.2A CN201310104256A CN103367087B CN 103367087 B CN103367087 B CN 103367087B CN 201310104256 A CN201310104256 A CN 201310104256A CN 103367087 B CN103367087 B CN 103367087B
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CN
China
Prior art keywords
ion
charged particles
plasma
voltage
source
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CN201310104256.2A
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English (en)
Chinese (zh)
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CN103367087A (zh
Inventor
T.米勒
S.克罗格
J.兹布拉内克
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FEI Co
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FEI Co
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Publication of CN103367087A publication Critical patent/CN103367087A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0805—Liquid metal sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/0817—Microwaves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H01J37/243—Beam current control or regulation circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201310104256.2A 2012-03-31 2013-03-28 自动化离子束空闲 Active CN103367087B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/436,916 2012-03-31
US13/436916 2012-03-31
US13/436,916 US9123500B2 (en) 2012-03-31 2012-03-31 Automated ion beam idle

Publications (2)

Publication Number Publication Date
CN103367087A CN103367087A (zh) 2013-10-23
CN103367087B true CN103367087B (zh) 2017-10-20

Family

ID=47997215

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310104256.2A Active CN103367087B (zh) 2012-03-31 2013-03-28 自动化离子束空闲

Country Status (4)

Country Link
US (1) US9123500B2 (https=)
EP (1) EP2645402A3 (https=)
JP (1) JP6227257B2 (https=)
CN (1) CN103367087B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201618153A (zh) * 2014-09-03 2016-05-16 紐富來科技股份有限公司 多重帶電粒子束的遮沒裝置，多重帶電粒子束描繪裝置，及多重帶電粒子束的不良射束遮蔽方法
CN105047512B (zh) * 2015-05-29 2017-03-15 光驰科技(上海)有限公司 具备多层载物能力的离子束刻蚀系统及其刻蚀方法
DE102017202339B3 (de) * 2017-02-14 2018-05-24 Carl Zeiss Microscopy Gmbh Strahlsystem mit geladenen Teilchen und Verfahren dafür
AU2018280166A1 (en) * 2017-06-07 2019-11-21 Lawrence Livermore National Security, Llc. Plasma confinement system and methods for use
JP7455857B2 (ja) * 2019-03-22 2024-03-26 アクセリス テクノロジーズ， インコーポレイテッド 液体金属イオン源

Family Cites Families (25)

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US3337729A (en) * 1964-11-27 1967-08-22 Richard E Thomas Method and apparatus for investigating variations in surface work function by electron beam scanning
US3896362A (en) * 1970-10-21 1975-07-22 Street Graham S B Light-beam steering apparatus
US5126163A (en) * 1990-09-05 1992-06-30 Northeastern University Method for metal ion implantation using multiple pulsed arcs
US5338939A (en) * 1992-01-13 1994-08-16 Fujitsu Limited Charged particle beam exposure including a heat blocking partition positioned near deflecting coils
US5825035A (en) 1993-03-10 1998-10-20 Hitachi, Ltd. Processing method and apparatus using focused ion beam generating means
US5378899A (en) * 1993-10-07 1995-01-03 Kimber; Eugene L. Ion implantation target charge control system
US5982101A (en) 1997-06-27 1999-11-09 Veeco Instruments, Inc. Charged-particle source, control system, and process using gating to extract the ion beam
KR100799014B1 (ko) * 2000-11-29 2008-01-28 에스아이아이 나노 테크놀로지 가부시키가이샤 초 미세 입체구조의 제조 방법 및 그 장치
US7479630B2 (en) * 2004-03-25 2009-01-20 Bandura Dmitry R Method and apparatus for flow cytometry linked with elemental analysis
EP1439566B1 (en) * 2003-01-17 2019-08-28 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam apparatus and method for operating the same
US6914386B2 (en) * 2003-06-20 2005-07-05 Applied Materials Israel, Ltd. Source of liquid metal ions and a method for controlling the source
FR2864628B1 (fr) * 2003-12-30 2006-02-17 Commissariat Energie Atomique Systeme de detection de rayonnements a comptage d'impulsions a double remise a zero
US7781947B2 (en) * 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
US7241361B2 (en) 2004-02-20 2007-07-10 Fei Company Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
US7230240B2 (en) * 2004-08-31 2007-06-12 Credence Systems Corporation Enhanced scanning control of charged particle beam systems
US7491947B2 (en) * 2005-08-17 2009-02-17 Varian Semiconductor Equipment Associates, Inc. Technique for improving performance and extending lifetime of indirectly heated cathode ion source
US20070120076A1 (en) * 2005-10-11 2007-05-31 Mks Instruments Inc. Integrated ionizers for process metrology equipment
US7667209B2 (en) 2006-07-06 2010-02-23 Hitachi High-Technologies Corporation Focused ION beam apparatus
JP5371142B2 (ja) * 2006-07-14 2013-12-18 エフ・イ−・アイ・カンパニー マルチソース型のプラズマ集束イオン・ビーム・システム
JP2008166137A (ja) * 2006-12-28 2008-07-17 Sii Nanotechnology Inc 集束イオンビーム装置
JP2008176984A (ja) * 2007-01-17 2008-07-31 Hitachi High-Technologies Corp イオンビーム加工装置
EP2124244B1 (en) * 2008-05-21 2011-08-03 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Ultra high precision measurement tool with control loop
US8253118B2 (en) * 2009-10-14 2012-08-28 Fei Company Charged particle beam system having multiple user-selectable operating modes
US8642974B2 (en) * 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US8124942B2 (en) * 2010-02-16 2012-02-28 Fei Company Plasma igniter for an inductively coupled plasma ion source

Also Published As

Publication number Publication date
EP2645402A2 (en) 2013-10-02
US20130256553A1 (en) 2013-10-03
JP6227257B2 (ja) 2017-11-08
US9123500B2 (en) 2015-09-01
CN103367087A (zh) 2013-10-23
EP2645402A3 (en) 2015-03-25
JP2013214502A (ja) 2013-10-17

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