CN103364927B - Lithography machine illumination system polarimetry optical system - Google Patents
Lithography machine illumination system polarimetry optical system Download PDFInfo
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- CN103364927B CN103364927B CN201310301241.5A CN201310301241A CN103364927B CN 103364927 B CN103364927 B CN 103364927B CN 201310301241 A CN201310301241 A CN 201310301241A CN 103364927 B CN103364927 B CN 103364927B
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Abstract
A kind of lithography machine illumination system polarimetry optical system, comprise successively along its optical axis direction: aperture diaphragm, image-forming objective lens, wave plate, analyzer, relay objective, image-position sensor, the present invention can meet that image-position sensor size and Large visual angle angle, back work distance are longer, wave plate and the position of analyzer and the requirement of size, compact conformation, and spherical aberration, astigmatism, the curvature of field, distortion, wave aberration are all well corrected.
Description
Technical field
The present invention relates to litho machine, particularly a kind of lithography machine illumination system polarimetry optical system.
Background technology
Litho machine be a kind of by required Graphic transitions to the equipment on the substrate target position being coated with photochromics.Litho machine can be applied to integrated circuit (IC) manufacture, printed circuit board (PCB) (PCB) manufactures, liquid crystal panel (LCD) manufactures.Generally; required figure is on mask or mask (reticle, mask); can by required Graphic transitions to substrate (such as; silicon chip) on target location (such as; comprise the exposure field of one or more chip) on; described substrate is coated with photochromics (such as, photoresist).Known litho machine comprises:
Contact photoetching machine, mask directly contacts with substrate, and light source sends light and on substrate, exposed Graphic transitions by mask;
Proximity stepper, has micron-sized gap between mask and substrate, light source sends light and on substrate, exposed Graphic transitions by mask;
, there is imaging projection objective in projection aligner between mask and substrate, light source sends light and on substrate, exposed Graphic transitions through illuminator, mask, projection objective.The projection objective of projection aligner is by the pattern imaging on mask on substrate, and its multiplying power is generally and reduces 10 times, 5 times, 4 times, 1 times etc.Known projection aligner comprises: stepper, by being exposing to by required figure on substrate target location, and by step motion, is exposing to by required figure on the next target location of substrate; And scanning machine, illuminating bundle is along the required figure of assigned direction (direction of scanning) scanning, parallel or antiparallel mode scans substrate target position and completes Graphic transitions in the direction simultaneously, form a scan exposure field, and by step motion, complete once Graphic transitions in next scan exposure field.Known Next Generation Lithography comprises: stamping technique, by being impressed on substrate by required figure, and transfers to substrate target position by required figure from mask; Maskless photoetching technology (Maskless Lithography, ML2), by dummy mask by required Graphic transitions on substrate target position.
Known projection aligner comprises illuminator and projection objective, and in operation, mask, between illuminator and projection objective, typically, has the circuitous pattern of the required exposure formed by crome metal at the lower surface of mask.In exposure process, silicon chip is accurately located, be imaged on silicon chip surface to make circuitous pattern on mask by projection objective.
Semiconductor photolithography is progress constantly, and critical size constantly to more high node technology propelling, causes the numerical aperture of projection objective (NA) constantly to increase.In litho machine, light increases along with the increase of NA relative to the angle of optical axis, and for optical patterning, the vectorial property of light wave is very important, and the polarized component only having direction of vibration identical just can be interfered, and has contribution to Graphic transitions.Therefore, the contrast of litho pattern is not only determined by projection objective beam quality, and polarization has very large impact for the contrast of figure.
At present, adopt argon fluoride (ArF) excimer laser and immersion lithography technology, and coordinate dual graphic exposure technique, realized 32nm node technology.The exemplary apparatus realizing this technology is Dutch ASML company model is the litho machine of 1950i, and the numerical aperture NA of its projection objective is 1.35, and enlargement ratio is-0.25, and wherein polarized illumination system is the necessary devices realizing this node technology.And be 1.20 models at the numerical aperture of projection objective NA that ASML company is early stage be in the litho machine of 1750i, polarized illumination system is the option means of this litho machine.In this, litho machine all needed to measure the polarization state that polarized illumination system is incident upon illumination light on mask in two generation.The parameter such as polarized light direction of vibration, degree of polarization of illuminating bundle is most important to the accurate exposure realizing various different graphic, does not have polarimetry and the control of illuminating bundle, does not just have qualified exposure figure.
The existing optical sensor set up in litho machine, such as pinhole camera is insensitive to polarization usually.Measure the polarization of illuminating bundle, need to introduce polarization-sensitive element, such as, wave plate, analyzer etc.Therefore, lithography machine illumination system polarimetry optical system comprises: pinhole mask version, image-forming objective lens, wave plate, analyzer, relay objective, image-position sensor, as shown in Figure 1.Pinhole mask version is positioned at position, mask aligner mask face, and this position is exactly the object plane position of projection objective, utilizes pin hole to sample to different illumination field of view position.The function of image-forming objective lens is that the angular distribution by pin hole illuminating bundle is converted to space distribution, namely obtains the pupil of illuminating bundle in the image planes of this image-forming objective lens.The function of wave plate and analyzer is modulated the polarization state of illuminating bundle, and modulation is realized by rotating wave plate.The function of relay objective is continued to be imaged onto on image-position sensor by modulated beam of light.Image-position sensor is positioned at the image planes position of relay objective, and typically, general CMOS camera or the CCD camera of adopting is as image-position sensor.
Summary of the invention
The object of the present invention is to provide a kind of optical system of lithography machine illumination system polarimetry, pin hole in pinhole mask version picture surface is transformed in image-position sensor photosurface, it can not only correct various aberration effectively, and meet the requirement of pinhole mask version size, wave plate and analyzer size, image-position sensor size, to reach the requirement of practical semiconductor lithographic equipment application.
The object of the present invention is achieved like this:
A kind of lithography machine illumination system polarimetry optical system, for the pin hole in pinhole mask version picture surface is transformed in image-position sensor photosurface, comprise successively along its optical axis direction: the front focal plane of image-forming objective lens, image-forming objective lens, wave plate, analyzer, relay objective, picture plane, it is characterized in that, aperture stop plane is positioned at the front focal plane of image-forming objective lens, wave plate is positioned at the back focal plane of image-forming objective lens, image-position sensor photosurface is positioned at the image planes position of relay objective, described image-forming objective lens comprises first to the 5th lens L1 ~ L5, the first described lens, second lens and the 4th lens are the meniscus lens in concave surface facing aperture diaphragm face, 3rd lens are meniscus lens of concave surface facing picture plane, 5th lens are biconvex lens, described relay objective comprises the 6th to the 11 lens L6 ~ L11, the 7th described lens, 8th lens, 9th lens and the tenth lens are meniscus lens, 6th lens and the 11 lens are biconvex lens, the 8th described lens and the concave surface facing aperture diaphragm face of the tenth lens, the concave surface facing picture plane of the 7th lens and the 9th lens, the 6th described lens and the 11 lens have positive light coke, 7th lens, 8th lens, 9th lens and the tenth lens have negative power, and the optical surface of each lens described is sphere.
All lens and wave plate all adopt the fused quartz material of high permeability to make, and analyzer adopts magnesium fluoride (MgF
2) crystalline material makes.
All lens and wave plate all adopt the fused quartz material of high permeability, and the fused quartz material of optional Corning Incorporated 7980 trade mark, also can select the Lithosil of Schott AG
tMq0/1-E193 fused quartz material.
The present invention compared with prior art, has following advantage and good effect:
1, lithography machine illumination system polarimetry optical system of the present invention, effectively can meet image-position sensor size and Large visual angle angle, back work distance is longer, the position of wave plate and analyzer and dimensional requirement, and compact conformation;
2, the present invention adopts positive negative power to balance coupling, and spherical aberration, astigmatism, the curvature of field, distortion, wave aberration are all well corrected;
3, the present invention only adopts surface type to be the lens of sphere, does not introduce non-spherical lens, thus reduces the difficulty in the processing of lens, detection and dress school.
Accompanying drawing explanation
Fig. 1 is lithography machine illumination system polarimetry optics systematic difference schematic diagram of the present invention;
Fig. 2 is structure and the index path of lithography machine illumination system polarimetry optics system embodiment one of the present invention;
Fig. 3 is the modulation transfer function figure of lithography machine illumination system polarimetry optics system embodiment one of the present invention;
Fig. 4 is the RMS wave aberration distribution plan of lithography machine illumination system polarimetry optics system embodiment one of the present invention;
Fig. 5 is spherical aberration, astigmatism, the curvature of field, the distortion distribution plan of lithography machine illumination system polarimetry optics system embodiment one of the present invention;
Fig. 6 is structure and the index path of lithography machine illumination system polarimetry optics system embodiment two of the present invention;
Fig. 7 is the modulation transfer function figure of lithography machine illumination system polarimetry optics system embodiment two of the present invention;
Fig. 8 is the RMS wave aberration distribution plan of lithography machine illumination system polarimetry optics system embodiment two of the present invention;
Fig. 9 is spherical aberration, astigmatism, the curvature of field, the distortion distribution plan of lithography machine illumination system polarimetry optics system embodiment two of the present invention.
Embodiment
Below will be described in further detail lithography machine illumination system polarimetry optical system of the present invention.
Lithography machine illumination system polarimetry optical system of the present invention, measuring object is numerical aperture of projection objective NA is 1.35, and enlargement ratio is the lithography machine illumination system of-0.25.Owing to adopting argon fluoride (ArF) excimer laser, wavelength is 193.368nm, and therefore all lens and wave plate all adopt the fused quartz material of high permeability, and the fused quartz material of optional Corning Incorporated 7980 trade mark, also can select the Lithosil of Schott AG
tMq0/1-E193 fused quartz material.Analyzer adopts magnesium fluoride (MgF
2) crystalline material.
When wavelength is 193.368nm, the refractive index of fused quartz material is 1.560259, and magnesium fluoride crystal material O optical index is 1.427670.
Lithography machine illumination system polarimetry optical system of the present invention, true field half-angle requires as (reserved 10% surplus):
U＝arcsin(1.35/4*1.1)＝21.8°
Lithography machine illumination system polarimetry optical system image planes dimensional requirement of the present invention is:
The Pixel Dimensions of image-position sensor is 16 μm × 16 μm, and pixel quantity is 512 × 512, and the image planes of image-position sensor are of a size of 8.192mm × 8.192mm, and image planes half are highly 4.096mm.
Lithography machine illumination system polarimetry optical system focal length of the present invention requires:
In described pinhole mask version, pinhole diameter is 0.3mm, is less than 150mm from pin hole face to the distance of image planes, and image space working distance is greater than 17.53mm.
Lithography machine illumination system polarimetry optical system needs to improve imaging, and the RMS value of General Requirements wave aberration is less than 1/14 wavelength, is namely less than 13.8nm.Distortion requirement is less than 0.1%, and namely maximum distortion needs to be less than 4 μm, is 1/4 of CCD pixel.
The constrained parameters of lithography machine illumination system polarimetry optical system of the present invention are as shown in table 1.
Table 1 lithography machine illumination system polarimetry optical system parameter
| Constraint project | Parameter |
| Operation wavelength | 193.368nm |
| True field half-angle | 21.8° |
| Pinhole diameter | 0.3mm |
| Image planes half height | 4.096mm |
| Pixel Dimensions | 16μm×16μm |
| Focal length | 10.2407mm |
| Image space working distance | >17.53mm |
| From pin hole face to the distance of image planes | <150mm |
| Wave aberration RMS value | <13.8nm |
| Distortion | <0.1% |
| Fused quartz Refractive Index of Material | 1.560259193.368nm |
| Magnesium fluoride O optical index | 1.427670193.368nm |
Lithography machine illumination system polarimetry optical system of the present invention embodiment, as shown in Figure 2, lithography machine illumination system polarimetry optical system of the present invention, for the pin hole in pinhole mask version picture surface is transformed in image-position sensor photosurface, described lithography machine illumination system polarimetry optical system comprises along its optical axis direction: aperture stop plane (i.e. pin hole face), image-forming objective lens, wave plate, analyzer, relay objective, picture plane, described lithography machine illumination system polarimetry optical system, pin hole face is positioned at image-forming objective lens front focal plane position, wave plate is positioned at image-forming objective lens back focal plane position, image-position sensor photosurface is positioned at relay objective image planes position, described image-forming objective lens comprises first to the 5th lens L1 ~ L5, the first described lens, second lens and the 4th lens are the meniscus lens in concave surface facing aperture diaphragm face, 3rd lens are meniscus lens of concave surface facing picture plane, 5th lens are biconvex lens, the first described lens, 3rd lens and the 4th lens have negative power, second lens and the 5th lens have positive light coke, and the optical surface of each lens described is sphere, described relay objective comprises the 6th to the 11 lens L6 ~ L11, the 7th described lens, 8th lens, 9th lens and the tenth lens are meniscus lens, 6th lens and the 11 lens are biconvex lens, the 8th described lens and the concave surface facing aperture diaphragm face of the tenth lens, the concave surface facing picture plane of the 7th lens and the 9th lens, the 6th described lens and the 11 lens have positive light coke, 7th lens, 8th lens, 9th lens and the tenth lens have negative power, and the optical surface of each lens described is sphere.
Described lithography machine illumination system polarimetry optical system, all lens and wave plate all adopt the fused quartz material of high permeability, and the fused quartz material of optional Corning Incorporated 7980 trade mark, also can select the Lithosil of Schott AG
tMq0/1-E193 fused quartz material, analyzer adopts magnesium fluoride (MgF
2) crystalline material.
According to lithography machine illumination system polarimetry optical system parameter in table 1 above, the design data of lithography machine illumination system polarimetry optical system provided by the invention is as shown in table 2.In order to optical manufacturing, optical detection convenience and reduce costs, the optical surface of all elements of the present invention is sphere, without any non-spherical element.
Table 2 gives the specific design parameter value of every a slice lens of the lithography machine illumination system polarimetry optical system of the present embodiment, wave plate, analyzer, wherein, " surface " one hurdle to indicate from object plane (Object) to image planes (Image) the numbering of each optical surface, wherein STOP represents aperture diaphragm." radius " one hurdle give spherical radius corresponding to each surface." thickness/interval " hurdle gives the axial distance between adjacent two surfaces, if this two surface belongs to same lens, then and the thickness of these lens of numeric representation at " thickness/interval ", otherwise represent the distance of thing/image planes to lens or the spacing of adjacent lens." optical material " one hurdle namely indicate the material of corresponding lens." semiaperture " one hurdle specify 1/2 aperture value on corresponding surface, i.e. half height." affiliated object " hurdle indicates the lens between object plane to image planes corresponding to each surface.
The design parameter of table 2 lithography machine illumination system polarimetry of the present invention optical system
For lens L1 and L2, the spherical radius of the front surface 2 of L1 is the bending direction that its sign of-2.0414mm(illustrates surface), the front surface 2 of L1 is 4.2947mm to the spacing of aperture diaphragm, and its optical material is the semiaperture of corning7980, L1 front surface 2 is 1.5721mm; The spherical radius of the rear surface 3 of L1 is the rear surface 3 of front surface 2 to L1 of-2.9786mm, L1, and namely the center thickness of lens L1 is the semiaperture of the rear surface 3 of 1.1216mm, L1 is 2.1642mm, and namely L1 is the meniscus lens of concave surface facing aperture diaphragm.
Spherical radius and the semiaperture of the front surface 4 of L2 are respectively-177.3917mm and 2.6212mm, the front surface 4 of L2 is 0.1000mm to the spacing of the rear surface 3 of L1, the optical material of lens L2 is corning7980, spherical radius and the semiaperture of the rear surface 5 of L2 are respectively-4.8282mm and 2.7610mm, and the thickness of lens L2 is 1.3480mm.Except the semiaperture of image planes (surperficial Image) represents image space half height, the parameter value implication on all the other each surfaces can be analogized according to the description of L1, L2.Wave plate is consistent with lens with the method for expressing of analyzer parameter, and wherein 1.0E+18 represents plane.
Except these 11 pieces of lens of L1 ~ L11, wave plate, analyzer, be also provided with aperture diaphragm STOP before lens L1, the change of its aperture size will affect the imaging effect of this projection optical system.
When under the Parameter Conditions such as operation wavelength, visual field in Table 1, according to the analytical calculation of specialty optics design software CODE_V, its aberration correction degree is as follows.
Fig. 3 shows the modulation transfer function of embodiment one, due to Pixel Dimensions be 16 μm (corresponding spatial frequency be 31.25 lines right/millimeter), as seen from Figure 3,32 lines right/millimeter time MTF be greater than 0.66(be better than differentiate require MTF>0.4).
Fig. 4 is the distribution of the RMS wave aberration of embodiment one, and maximal value is 0.036nm.Which reflects the image quality of lithography machine illumination system polarimetry optical system of the present invention close to improving imaging.
Fig. 5 is spherical aberration, astigmatism, the curvature of field, the distortion figure of embodiment one, and wherein spherical aberration maximal value is-0.14 μm, and curvature of field maximal value is 1.98 μm, and astigmatism maximal value is 1.28 μm, is all within tolerance for aberration.And the maximal value that distorts is 4.0 μm, it is 1/4 of CCD pixel.
From table 2, data can obtain, and from pin hole face to image planes, distance is 131.25mm, meets the requirement of <150mm.In table 2, the data of the 28th are 21.7185, also meet the requirement of image space working distance >17.53mm.
Another embodiment of lithography machine illumination system polarimetry optical system of the present invention, as shown in Figure 6, lithography machine illumination system polarimetry optical system of the present invention, for the pin hole in pinhole mask version picture surface is transformed in image-position sensor photosurface, described lithography machine illumination system polarimetry optical system comprises along its optical axis direction: aperture stop plane (i.e. pin hole face), image-forming objective lens, wave plate, analyzer, relay objective, picture plane, described lithography machine illumination system polarimetry optical system, pin hole face is positioned at image-forming objective lens front focal plane position, wave plate is positioned at image-forming objective lens back focal plane position, image-position sensor photosurface is positioned at relay objective image planes position, described image-forming objective lens comprises first to the 5th lens L1 ~ L5, the first described lens, second lens and the 4th lens are the meniscus lens in concave surface facing aperture diaphragm face, 3rd lens are meniscus lens of concave surface facing picture plane, 5th lens are biconvex lens, the first described lens, second lens and the 5th lens have positive light coke, 3rd lens and the 4th lens have negative power, and the optical surface of each lens described is sphere, described relay objective comprises the 6th to the 11 lens L6 ~ L11, the 7th described lens, 8th lens, 9th lens and the tenth lens are meniscus lens, 6th lens and the 11 lens are biconvex lens, the 8th described lens and the concave surface facing aperture diaphragm face of the tenth lens, the concave surface facing picture plane of the 7th lens and the 9th lens, the 6th described lens and the 11 lens have positive light coke, 7th lens, 8th lens, 9th lens and the tenth lens have negative power, and the optical surface of each lens described is sphere.
Described lithography machine illumination system polarimetry optical system, all lens and wave plate all adopt the fused quartz material of high permeability, and the fused quartz material of optional Corning Incorporated 7980 trade mark, also can select the Lithosil of Schott AG
tMq0/1-E193 fused quartz material, analyzer adopts magnesium fluoride (MgF2) crystalline material.
According to lithography machine illumination system polarimetry optical system parameter in table 1 above, the design data of the embodiment two of lithography machine illumination system polarimetry optical system provided by the invention is as shown in table 3.
The design parameter of table 3 lithography machine illumination system polarimetry of the present invention optics system embodiment two
When under the Parameter Conditions such as operation wavelength, visual field in Table 1, according to the analytical calculation of specialty optics design software CODE_V, its aberration correction degree is as follows.
Fig. 7 shows the modulation transfer function of the embodiment of the present invention two, 32 lines right/millimeter time MTF be greater than 0.67.
Fig. 8 is the distribution of the RMS wave aberration of the embodiment of the present invention two, and maximal value is 0.021nm.Which reflects the image quality of lithography machine illumination system polarimetry optical system of the present invention close to improving imaging.
Fig. 9 is spherical aberration, astigmatism, the curvature of field, the distortion figure of the embodiment of the present invention two, and wherein spherical aberration maximal value is-0.10 μm, and curvature of field maximal value is 1.25 μm, and astigmatism maximal value is 0.71 μm, is all within tolerance for aberration.And the maximal value that distorts is 4.0 μm, it is 1/4 of CCD pixel.
From table 3, data can obtain, and from pin hole face to image planes, distance is 149.30mm, meets the requirement of <150mm.In table 3, the data of the 28th are 28.9428, also meet the requirement of image space working distance >17.53mm.
Adopt lithography machine illumination system polarimetry optical system of the present invention, meet the technical requirement for measuring illumination iris polarisation distribution completely, image quality is excellent, and reaches the application requirement of actual illumination pupil polarimetry.
Claims (2)
1. a lithography machine illumination system polarimetry optical system, comprises successively along its optical axis direction: aperture diaphragm, image-forming objective lens, wave plate, analyzer, relay objective, image-position sensor, it is characterized in that, aperture stop plane is positioned at the front focal plane of described image-forming objective lens, and described wave plate is positioned at the back focal plane of image-forming objective lens, the photosurface of described image-position sensor is positioned at the image planes position of described relay objective, and described image-forming objective lens comprises the first lens, second lens, 3rd lens, 4th lens and the 5th lens, the first described lens, second lens and the 4th lens are the meniscus lens in concave surface facing aperture diaphragm face, and the 3rd lens are meniscus lens of concave surface facing picture plane, and the 5th lens are biconvex lens, and described relay objective comprises the 6th lens, 7th lens, 8th lens, 9th lens, tenth lens and the 11 lens, the 7th described lens, 8th lens, 9th lens and the tenth lens are meniscus lens, 6th lens and the 11 lens are biconvex lens, the 8th described lens and the concave surface facing aperture diaphragm face of the tenth lens, the concave surface facing picture plane of the 7th lens and the 9th lens, the 6th described lens and the 11 lens have positive light coke, the 7th lens, 8th lens, 9th lens and the tenth lens have negative power, and the optical surface of each lens described is sphere.
2. optical system according to claim 1, is characterized in that, described analyzer adopts magnesium fluoride crystal material to make.
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| CN103926677B (en) * | 2014-04-01 | 2016-06-08 | 中国科学院上海光学精密机械研究所 | For the fourier transformation object lens that lithography illuminating system pupil is measured |
| CN103926801B (en) * | 2014-04-01 | 2016-03-09 | 中国科学院上海光学精密机械研究所 | Projection optical system |
| CN104536117B (en) * | 2014-11-28 | 2017-01-25 | 青岛市光电工程技术研究院 | Visible spectral relay imaging lens group |
| CN104777609B (en) * | 2015-04-03 | 2018-07-13 | 中国科学院上海光学精密机械研究所 | Photo-etching machine illumination pupil measuring polarization state optical system |
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| CN101319958A (en) * | 2008-07-16 | 2008-12-10 | 中国科学院上海光学精密机械研究所 | Quarter-wave plate fast axis direction real-time measurement apparatus and method |
| CN101949734A (en) * | 2010-08-20 | 2011-01-19 | 中国科学院上海光学精密机械研究所 | Method for improving measurement precision of beam polarization degree |
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| US5631731A (en) * | 1994-03-09 | 1997-05-20 | Nikon Precision, Inc. | Method and apparatus for aerial image analyzer |
| US7158275B2 (en) * | 2004-04-13 | 2007-01-02 | Intel Corporation | Polarization modulator |
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| CN101319958A (en) * | 2008-07-16 | 2008-12-10 | 中国科学院上海光学精密机械研究所 | Quarter-wave plate fast axis direction real-time measurement apparatus and method |
| CN101949734A (en) * | 2010-08-20 | 2011-01-19 | 中国科学院上海光学精密机械研究所 | Method for improving measurement precision of beam polarization degree |
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