CN103364590B - Sensor circuit and the method that MEMS sensor is tested - Google Patents
Sensor circuit and the method that MEMS sensor is tested Download PDFInfo
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- CN103364590B CN103364590B CN201310118845.6A CN201310118845A CN103364590B CN 103364590 B CN103364590 B CN 103364590B CN 201310118845 A CN201310118845 A CN 201310118845A CN 103364590 B CN103364590 B CN 103364590B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2605—Measuring capacitance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
Abstract
The method that the application relates to sensor circuit and tests MEMS sensor.A kind of sensor circuit, comprise MEMS (micro electro mechanical system) (MEMS) sensor and integrated circuit (IC), described MEMS sensor comprises the first capacity cell and the second capacity cell, and described IC comprises switching network circuit and capacitance measurement circuit.Described switching network Circnit Layout becomes described first capacity cell of described MEMS sensor and the first input end electrolysis coupling of described IC, and described second capacity cell is electrically coupled to second input end of described IC.Described capacitance measurement circuit can be configured to the electric capacity of described second capacity cell measuring described MEMS sensor during being applied the first electric signal to this by the first capacity cell of decoupling zero.
Description
Technical field
Generally speaking, the application relates to electronic circuit, more specifically, relates to MEMS sensor circuit.
Background technology
MEMS (micro electro mechanical system) (MEMS) comprises the small mechanical equipment performing electric power and mechanical function, and this plant equipment uses and is made with the photoetching process making the resemble process that integrated circuit uses.Some MEMS device to detect the sensor of motion, such as accelerometer, or can the sensor of detection angle speed, such as gyroscope.Accelerometer is in response to the equipment acting on and experience measurable change from acceleration with it.MEMS accelerometer can comprise piezoelectric type, pressure resistance type and capacitive accelerometer.Capacitive accelerometer experiences the change of electric capacity in response to acceleration.The production of MEMS accelerometer comprises test, and this test should detect any defect in processed equipment fast.
Summary of the invention
Except other aspects, the application also discusses equipment, system and method for testing MEMS sensor.A kind of example apparatus, comprise MEMS sensor and integrated circuit (IC), described MEMS sensor comprises the first capacity cell and the second capacity cell.Described IC comprises switching network circuit and capacitance measurement circuit.Described switching network Circnit Layout becomes described first capacity cell of described MEMS sensor and the first input end electrolysis coupling of described IC, and described second capacity cell is electrically coupled to second input end of described IC.Described capacitance measurement circuit can be configured to the electric capacity of described second capacity cell measuring described MEMS sensor during being applied the first electric signal to this by the first capacity cell of decoupling zero.
A kind of the exemplary method that MEMS sensor is tested to be comprised: by the first capacity cell of MEMS sensor and IC electrolysis coupling; The first electric signal is applied by the capacity cell of decoupling zero to this; And during applying described first electric signal, measure the electric capacity of the second capacity cell of described MEMS sensor.
Summary of the invention part aims to provide the general introduction to subject of this patent application, not aims to provide exclusiveness or the exhaustive explanation of the application.Comprise embodiment herein to provide the further information relevant with present patent application.
Accompanying drawing explanation
In accompanying drawing (these accompanying drawings are not necessarily drawn to scale), identical numeral can describe the similar parts in different views.By example, unrestriced mode generally illustrates each embodiment discussed in the application to accompanying drawing.
Fig. 1 shows the block scheme of the part of exemplary MEMS sensor and integrated circuit;
Fig. 2 shows the process flow diagram of the illustrative methods of the self-test realizing MEMS sensor;
Fig. 3 shows an exemplary circuit of test MEMS sensor;
Fig. 4 shows another exemplary circuit of test MEMS sensor;
Fig. 5 illustrate in greater detail the figure of exemplary test circuit.
Embodiment
Fig. 1 shows exemplary MEMS sensor 105 and is used for the block scheme of part of integrated circuit (IC) 110 of monitoring sensor exporting change.This MEMS sensor 105 can be capacitive accelerometer, the change that the electric capacity that wherein this IC monitors this sensor occurs in response to the acceleration acted on this sensor.
Typical MEMS capacitive accelerometer comprises removable Detection job block (proofmass), and this removable Detection job block has the capacity cell be attached to by mechanical type suspension (mechanicalsuspension) on reference frame (referenceframe).Shown in Fig. 1 two capacity cell is circuit capacitor, is labeled as CaP and CaN respectively.Actual capacity cell can be made up of (such as, parallel connection) multiple plate of electric coupling, to produce the such total capacitance of capacitor CaP or CaN as shown in Figure 1.As shown in Figure 1, capacitor forms the bridge from two output terminals of MEMS sensor 105 to public circuit node 115, and public circuit node 115 can represent that the circuit of removable Detection job block connects.A plate or one group of plate of each capacitor can be attached to this removable Detection job block, and another plate or another group plate are fixing.
The acceleration be applied on MEMS accelerometer causes the movement of Detection job block.The displacement of this Detection job block changes the interval between the plate of capacitor.The capacitance difference produced between this displacement cardinal principle and described two capacity cells is proportional.This Detection job block and mechanical type suspension being modeled as spring can make acceleration according to recklessly can being determined by displacement by law.
In general, the capacitance variations of couple capacitors is relevant with the acceleration on a direction.Increase can determine the acceleration in second direction perpendicular to another couple capacitors that this first couple capacitors is arranged, these two couple capacitors can be used as dual axis accelerometer.Three couple capacitors are three axles or the consideration of three-dimensional (3D) accelerometer.
In order to test accelerometer, capacitive MEMS sensor can be utilized also to can be used as this advantage of actuator.Typically, add on capacitor to the MEMS sensor used in test mode to increase electrostatic charge and to drive Detection job block.This test mode needs in MEMS sensor, make extra capacitor and extra electrical contact.Better method uses sensing capacitance element itself in testing.Like this, owing to not needing to be exclusively used in the parts of test and simplifying the design of MEMS sensor.
Fig. 2 is the process flow diagram of the illustrative methods 200 of the self-test realizing MEMS capacitive sensor.In the normal mode of operation, as shown in Figure 1, MEMS sensor is electrically coupled to IC (such as special IC or ASIC).Under normal mode, this IC measures the electric capacity of the output of this MEMS sensor.At frame 205 place, in test mode, by the first capacity cell of this MEMS sensor and this IC electrolysis coupling.At frame 210 place, the first electric signal is applied on the capacity cell by decoupling zero.Apply this first electric signal Detection job block can be caused to move and change the electric capacity of the second capacity cell, measure the electric capacity of the second capacity cell at frame 215 place.Similarly, can measure the first capacity cell.
Get back to Fig. 1, IC110 comprises switching network circuit 120.This switching network circuit 120 can work in both the normal mode and the testing mode.In the normal mode of operation, first and second capacity cells (such as CaP and CaN) of MEMS sensor 105 can be coupled into capacity cell pair by this switching network.This capacity cell changes electric capacity in response to acceleration, thus forms acceleration-capacitive transducer.
Under test pattern, the second capacity cell by the first input end electrolysis coupling of the first capacity cell of MEMS sensor 105 and IC, can be electrically coupled to second input end of IC110 by switching network circuit 120.This IC110 also comprises capacitance measurement circuit 125, and this capacitance measurement circuit 125 measures the electric capacity of the second capacity cell of this MEMS sensor during being applied the first electric signal to this by the first capacity cell of decoupling zero.
Fig. 3 is the diagram of this method of testing.In order to test capacitor CaN, the circuit of capacitor CaP and the IC310 of MEMS sensor 305 electricity is disconnected or electric isolution.The external electrical connections of Detection job block can be acquired at circuit node 315 (the being labeled as node A) place that these two capacitors share.Electric signal is applied to by the lead-in wire (being labeled as Node B) of the capacitor CaP of decoupling zero.Can with node A homophase or out of phase driving node B to test this sensor.When anti-phase, this Detection job block by electrostatic tractive to imitate the change of accelerating force.Then, the electric capacity of CaN can be measured while driving node B.This susceptible of proof capacity cell when Detection job block moves changes.When driven in phase node A and Node B, susceptible of proof capacitance variations is very little or do not change.
Capacitor CaP can be measured in a similar manner, as shown in Figure 4.In order to test capacitors element CaP, capacitor CaP by the capacitor CaN of MEMS sensor 405 and IC410 electrolysis coupling, and is electrically coupled to IC410 by switching network circuit.Electric signal is applied to by the lead-in wire (being labeled as Node B) of the capacitor CaN of decoupling zero.Can with node A homophase or out of phase driving node B to test this sensor.If this MEMS sensor is multidimensional sensor, so this test can for multiple capacity cell to repeatedly carrying out.
According to some examples, be square wave for driving by the electric signal of the capacitor of decoupling zero.Get back to Fig. 1, test circuit 130 can be used to be applied to by first square wave by the first capacity cell of decoupling zero (CaP in such as Fig. 3), and the second square-wave signal is applied to external circuit nodes (circuit node 315 in such as Fig. 3).This external circuit nodes is shared by the first capacity cell and the second capacity cell, and can be electrically coupled to Detection job block.
Capacitance measurement circuit 125 measures the electric capacity of the second capacity cell (CaN in such as Fig. 3) during applying first and second square-wave signal.In some examples, the second square-wave signal is contrary with the phase place of the first square-wave signal, to imitate the change of acceleration.Can be success/failure testing to the test of this equipment, also can quantize the change of electric capacity and the scope of the change of this quantification and target capacitance value or value is compared.In some examples, the second square-wave signal and the first square-wave signal homophase.Then the electric capacity that this test susceptible of proof records is less than target capacitance value.
According to some examples, capacitance measurement circuit 125 comprises Differential Input analog to digital converter (ADC) circuit, and this adc circuit is configured to produce the digital value of the electric capacity representing measured capacity cell (such as CaP or CaN).In some examples, capacitance measurement circuit 125 comprises Differential Input ∑-Δ adc circuit.
Fig. 5 is the schematic diagram of test circuit in Fig. 4, shows the more detailed the example how capacity cell of MEMS sensor being connected to ∑-Δ adc circuit 525.This example shown comprises capacitor and First-order Integral device.In some examples, this integrator can be the integrator of more high-order.The output terminal of ∑-Δ adc circuit 525 produces the count value representing the electric capacity of this MEMS sensor.Like this, the capacity cell of this MEMS sensor forms the capacitance-voltage sensor circuit with ∑-Δ ADC.Digital low-pass filtering circuit 135 can be followed after the output terminal of described ∑-Δ adc circuit.In the example of hgure 5, the output terminal of ∑-Δ adc circuit 525 is for generation of count value, and this count value represents the electric capacity of the CaP when switching network circuit works in test mode.
IC can comprise the self-test couple capacitors be made up of CstPandCstN.In some examples, this capacitor has identical capacitance.If the first capacity cell of this MEMS sensor and this IC electrolysis coupling, then the second capacity cell of this MEMS sensor can be electrically coupled to the first input end of this adc circuit by this switching network circuit, and is electrically coupled to the second input end of this adc circuit via this self-test couple capacitors.Like this, this self-test couple capacitors is configured to a part for the capacitance-voltage sensor of described IC by this switching network circuit.
In some instances, this IC comprises at least one compensation condenser (such as CofP and/or CofN) of any common-mode offset for eliminating this adc circuit.If the first capacity cell of this MEMS sensor and this IC electrolysis coupling, then this second capacity cell and this compensation condenser can be electrically coupled to the first input end of this Differential Input adc circuit by this switching network circuit during measurement second capacity cell.In the example of hgure 5, this MEMS capacitor (CaP) and this compensation condenser (CofP) form a part for capacitor-voltage sensor, the input end of merged this adc circuit of formation of this capacitor-voltage sensor.
Note that and only have the capacity cell of the MEMS sensor for acceleration measurement just to use in testing, this MEMS sensor does not need extra test capacitors.This just makes this MEMS sensor need less circuit block and circuit junction, simplifies design.
complementary annotations & example
Example 1 can comprise or use theme (such as a kind of device), this theme comprises MEMS (micro electro mechanical system) (MEMS) sensor and IC, this MEMS sensor comprises the first capacity cell and the second capacity cell, this IC comprises switching network circuit and capacitance measurement circuit, this switching network Circnit Layout becomes described first capacity cell of described MEMS sensor and the first input end electrolysis coupling of described IC and described second capacity cell is electrically coupled to second input end of described IC, this capacitance measurement circuit is configured to the electric capacity measuring described second capacity cell of described MEMS sensor during being applied the first electric signal by the first capacity cell of decoupling zero.
In example 2, the theme described in example 1 comprises switching network alternatively, and this switching network is configured to described second capacity cell of described MEMS sensor and described IC electrolysis coupling, and described first capacity cell is electrically coupled to described IC.Described capacitance measurement circuit is configured to the electric capacity measuring described first capacity cell of described MEMS sensor during being applied the second electric signal by the second capacity cell of decoupling zero alternatively.
In example 3, any one or the theme described in combination in any of example 1-2 comprise test circuit alternatively, this test circuit is configured to: apply the first square-wave signal to described the first capacity cell by decoupling zero, and the external circuit nodes shared to described first capacity cell and described second capacity cell applies the second square-wave signal.The phase place of described second square-wave signal is contrary with the phase place of described first square-wave signal alternatively, and described capacitance measurement circuit is configured to the electric capacity measuring described second capacity cell during applying described first square-wave signal and described second square-wave signal alternatively.
In example 4, any one or theme described in combination in any of example 1 and 2 comprise test circuit alternatively, this test circuit is configured to: apply the first square-wave signal to described the first capacity cell by decoupling zero, and applies the second square-wave signal to the external node shared by described first capacity cell and described second capacity cell.Described second square-wave signal and described first square-wave signal homophase, and described capacitance measurement circuit is configured to measure described electric capacity during described first square-wave signal of applying and described second square-wave signal.
In example 5, any one or the theme described in combination in any of example 1-4 comprise capacitance measurement circuit alternatively, this capacitance measurement circuit comprises Differential Input analog to digital converter (ADC) circuit, and this adc circuit is configured to produce the digital value of the electric capacity representing described second capacity cell.
In example 6, the theme described in example 5 comprises the IC with self-test couple capacitors alternatively.Described switching network circuit is configured to alternatively: the first input end described second capacity cell of described MEMS sensor being electrically coupled to described adc circuit, and described self-test couple capacitors is configured to the capacitance-voltage sensor of described IC inside, and described self-test couple capacitors is electrically coupled to the second input end of described adc circuit.
In example 7, any one or the theme described in combination in any of example 5-6 comprise IC alternatively, and this IC comprises at least one compensation condenser of any common-mode offset being configured to eliminate described adc circuit.Described switching network circuit is configured to the described first input end described second capacity cell and described compensation condenser being electrically coupled to described Differential Input adc circuit during measuring described second capacity cell alternatively.
In example 8, any one or the theme described in combination in any of example 5-7 comprise Differential Input ∑-Δ adc circuit alternatively.
In example 9, any one or the theme described in combination in any of example 1-8 comprise switching network circuit alternatively, and this switching network circuit is configured to work under test pattern and normal mode alternatively.Under described test pattern, described switching network is configured at least one in described first capacity cell and described second capacity cell and described IC electrolysis coupling alternatively, under described normal mode, described switching network circuit is configured to described first capacity cell of described MEMS sensor and described second capacity cell to be coupled as the first capacity cell pair alternatively.Described first capacity cell changes electric capacity to being configured to alternatively in response to the acceleration on first direction.
In example 10, any one or the theme described in combination in any of example 1-9 comprise capacitance-voltage sensor circuit alternatively.
In example 11, any one or the theme described in combination in any of example 1-10 comprise MEMS sensor alternatively, and this MEMS sensor comprises accelerometer.
Example 12 can comprise following theme (such as a kind of device for apply behavior, method, or comprise the machine readable media of the instruction making this machine apply behavior when executed by a machine), or combine to comprise following theme with any one or the combination in any of example 1-11 alternatively, this theme comprises: by the first capacity cell of MEMS sensor and IC electrolysis coupling, applied the first electric signal to this by the capacity cell of decoupling zero, and measure the electric capacity of the second capacity cell of described MEMS sensor during applying described first electric signal.This theme can comprise the device of decoupling zero first capacity cell, and its illustrated examples can comprise one or more on-off circuit or switching network.This theme can comprise and is applied to by the device of the capacity cell of decoupling zero by the first electric signal, and its illustrated examples can comprise test circuit.The device of the electric capacity of the second capacity cell of described MEMS sensor measured in this theme during can being included in and applying described first electric signal, its illustrated examples can comprise capacitance measurement circuit, adc circuit, difference adc circuit and difference ∑-Δ adc circuit.
In example 13, the theme described in example 12 comprises alternatively: by described second capacity cell of described MEMS sensor and described IC electrolysis coupling; The second electric signal is applied to described second capacity cell; And during applying described second electric signal, measure the electric capacity of described first capacity cell of described MEMS sensor.
In example 14, any one or theme described in combination in any of example 12 and 13 comprise alternatively: the first square-wave signal is applied to described first capacity cell; Second square-wave signal is applied to the external node that described first capacity cell and described second capacity cell share, the phase place of described second square-wave signal is contrary with the phase place of described first square-wave signal; The electric capacity of described second capacity cell is measured during applying described first square-wave signal and described second square-wave signal.
In example 15, any one or theme described in combination in any of example 12 and 13 comprise alternatively: the first square-wave signal is applied to described first capacity cell; Second square-wave signal is applied to the external node that described first capacity cell and described second capacity cell share, wherein, described second square-wave signal and described first square-wave signal homophase; The electric capacity of described second capacity cell is measured during applying described first square-wave signal and described second square-wave signal.
In example 16, any one or the theme described in combination in any of example 12-15 comprise alternatively: utilize Differential Input ∑-Δ analog to digital converter (ADC) circuit to produce the digital value representing the electric capacity of described second capacity cell.
In example 17, the theme described in example 16 comprises alternatively: the first input end described second capacity cell being electrically coupled to Differential Input adc circuit; And the self-test couple capacitors of described IC inside being electrically coupled to the second input end of described adc circuit, wherein said self-test couple capacitors forms the charge-voltage sensor of described IC inside.
In example 18, described first capacity cell and described second capacity cell is measured during any one or the theme described in combination in any of example 12-17 are included in test pattern alternatively, wherein, in the normal mode of operation, described first capacity cell and described second capacity cell comprise the first capacity cell pair, and are configured in response to the acceleration on first direction and change electric capacity.
In example 19, any one or the theme described in combination in any of example 12-18 comprise alternatively: under described normal mode of operation, use at least one compensation condenser to eliminate any common mode voltage; And during described test pattern, when measuring described second capacity cell, described compensation condenser and described second capacity cell are electrically coupled to the described first input end of described Differential Input adc circuit.
In example 20, any one or the theme described in combination in any of example 12-19 comprise alternatively: the electric capacity of the second capacity cell of acceleration measurement-electric capacity MEMS sensor.
Example 21 can comprise following theme, or combine to comprise following theme with any portion of example any one or more in example 1-20 or the combination of multiple arbitrary portion alternatively, this theme can comprise: for performing the device of any one or several functions in the function of example 1-20, or comprises the machine readable media making machine perform the instruction of any one or several functions in the function of example 1-20 when executed by a machine.
Each in these non-limiting examples can be independently, also can parallel combinations or combine with one or more in other examples.
Above-mentioned detail specifications have references to accompanying drawing, and accompanying drawing is also a part for described detail specifications.Accompanying drawing shows the concrete example can applying the application in graphic mode.These embodiments are referred to as " example " in this application.All publications, patent and patent document involved by the application are all as the reference content of the application, although they are respectively in addition references.If there is purposes difference between the application and reference paper, then the purposes with reference to file regards as supplementing of the purposes of the application, if there is implacable difference between the two, is then as the criterion with the purposes of the application.
In this application, normally used the same with patent document, term " " or " a certain " represent comprise one or more, but other situations or when using " at least one " or " one or more " should except.In this application, except as otherwise noted, otherwise use term "or" refer to without exclusiveness or, " A or B " being comprised: " A but be not B ", " B but be not A " and " A and B ".In the following claims, term " comprises " and " wherein " is equal to each term and " comprises " and the plain English of " wherein ".Equally, in the dependent claims, term " comprises " and " comprising " is open, namely, system, equipment, article or step comprise parts except those parts listed after term this in claim, within the scope being still considered as dropping on this claim.And in claim below, term " first ", " second " and " the 3rd " etc. are only used as label, not have quantitative requirement to object.
The effect of above-mentioned explanation is to explain orally and unrestricted.Above-described embodiment (or one or more aspects of embodiment) can be combined.Can, on the basis understanding above-mentioned instructions, utilize certain routine techniques of prior art to perform other examples.Regulation in accordance with 37C.FR. § 1.72 (b) provides summary, allows reader to determine character disclosed in this technology fast.Submit to during this summary and should be understood that this summary is not used in scope or the meaning of explaining or limit claim.Equally, in superincumbent embodiment, various feature can be classified into be rationalized the disclosure.This open feature not shoulding be understood to failed call is essential to any claim.On the contrary, the theme of the application can be that feature is less than all features of specific disclosed example.Therefore, claim is below incorporated in embodiment accordingly, and each claim is all as an independent example.Should referring to appended claim, and all scopes of equivalent that these claims are enjoyed, determine the scope of the application.
Claims (20)
1. a sensor circuit, comprising:
MEMS sensor, comprises the first capacity cell and the second capacity cell; And
IC, comprising:
Switching network circuit, is configured to the first input end electrolysis coupling of described first capacity cell by described MEMS sensor and described IC, and described second capacity cell is electrically coupled to second input end of described IC; And
Capacitance measurement circuit, is configured to the electric capacity measuring described second capacity cell of described MEMS sensor during being applied the first electric signal by the first capacity cell of decoupling zero.
2. sensor circuit as claimed in claim 1,
Wherein, described switching network Circnit Layout becomes described second capacity cell of described MEMS sensor and described IC electrolysis coupling, and described first capacity cell is electrically coupled to described IC; And
Wherein, described capacitance measurement circuit is configured to the electric capacity measuring described first capacity cell of described MEMS sensor during being applied the second electric signal by the second capacity cell of decoupling zero.
3. sensor circuit as claimed in claim 1, comprise test circuit, this test circuit is configured to:
The first square-wave signal is applied to described the first capacity cell by decoupling zero;
The external circuit nodes shared to described first capacity cell and described second capacity cell applies the second square-wave signal, and the phase place of wherein said second square-wave signal is contrary with the phase place of described first square-wave signal, and
Wherein said capacitance measurement circuit is configured to the electric capacity measuring described second capacity cell during applying described first square-wave signal and described second square-wave signal.
4. sensor circuit as claimed in claim 1, comprise test circuit, this test circuit is configured to:
The first square-wave signal is applied to described the first capacity cell by decoupling zero; And
The second square-wave signal is applied to the external node shared by described first capacity cell and described second capacity cell,
Wherein said second square-wave signal and described first square-wave signal homophase, and
Wherein said capacitance measurement circuit is configured to the electric capacity measuring described second capacity cell during applying described first square-wave signal and described second square-wave signal.
5. sensor circuit as claimed in claim 1, wherein, described capacitance measurement circuit comprises Differential Input adc circuit, and this Differential Input adc circuit is configured to produce the digital value of the electric capacity representing described second capacity cell.
6. sensor circuit as claimed in claim 5,
Wherein, described IC comprises self-test couple capacitors,
Wherein, described switching network Circnit Layout becomes:
Described second capacity cell of described MEMS sensor is electrically coupled to the first input end of described Differential Input adc circuit; And
Described self-test couple capacitors is configured to the capacitance-voltage sensor of described IC inside, and described self-test couple capacitors is electrically coupled to the second input end of described Differential Input adc circuit.
7. sensor circuit as claimed in claim 5,
Wherein, described IC comprises at least one compensation condenser being configured to any common-mode offset eliminating described Differential Input adc circuit;
Wherein, described switching network Circnit Layout becomes the described first input end described second capacity cell and described compensation condenser being electrically coupled to described Differential Input adc circuit during measuring described second capacity cell.
8. sensor circuit as claimed in claim 5, wherein, described Differential Input adc circuit is Differential Input sigma-delta adc circuit.
9. sensor circuit as claimed in claim 1,
Wherein, described switching network Circnit Layout becomes to work under test pattern and normal mode,
Wherein, under described test pattern, described switching network Circnit Layout becomes at least one in described first capacity cell and described second capacity cell and described IC electrolysis coupling,
Wherein, under described normal mode, described switching network Circnit Layout becomes described first capacity cell of described MEMS sensor and described second capacity cell are coupled as the first capacity cell pair, and
Wherein, described first capacity cell changes electric capacity to being configured in response to the acceleration on first direction.
10. sensor circuit as claimed in claim 1, wherein, described IC comprises capacitance-voltage sensor circuit.
11. sensor circuits as claimed in claim 1, wherein, described MEMS sensor comprises accelerometer.
12. 1 kinds of methods that MEMS sensor is tested, the method comprises:
By the first capacity cell of described MEMS sensor and IC electrolysis coupling;
The first electric signal is applied by the first capacity cell of decoupling zero to this; And
The electric capacity of the second capacity cell of described MEMS sensor is measured during applying described first electric signal.
13. methods as claimed in claim 12, comprising:
By described second capacity cell of described MEMS sensor and described IC electrolysis coupling;
The second electric signal is applied to described second capacity cell; And
The electric capacity of described first capacity cell of described MEMS sensor is measured during applying described second electric signal.
14. methods as claimed in claim 12,
Wherein, apply the first electric signal to comprise: the first square-wave signal is applied to described first capacity cell;
Wherein, the electric capacity measuring described second capacity cell comprises: the second square-wave signal is applied to the external node that described first capacity cell and described second capacity cell share;
Wherein, the electric capacity of described second capacity cell is measured during described first square-wave signal of applying and described second square-wave signal; And
Wherein, the phase place of described second square-wave signal is contrary with the phase place of described first square-wave signal.
15. methods as claimed in claim 12,
Wherein, apply the first electric signal to comprise: the first square-wave signal is applied to described first capacity cell;
Wherein, the electric capacity measuring described second capacity cell comprises: the second square-wave signal is applied to the external node that described first capacity cell and described second capacity cell share;
Wherein, the electric capacity of described second capacity cell is measured during described first square-wave signal of applying and described second square-wave signal; And
Wherein, described second square-wave signal and described first square-wave signal homophase.
16. methods as claimed in claim 12, wherein, the electric capacity measuring described second capacity cell comprises: utilize Differential Input Sigma-delta ADC's (ADC) circuit to produce the digital value representing the electric capacity of described second capacity cell.
17. methods as claimed in claim 12, wherein, the electric capacity measuring described second capacity cell comprises:
Described second capacity cell is electrically coupled to the first input end of Differential Input adc circuit; And
The self-test couple capacitors of described IC inside is electrically coupled to the second input end of described Differential Input adc circuit, wherein said self-test couple capacitors forms the charge-voltage sensor of described IC inside.
18. methods as claimed in claim 12,
Wherein, described first capacity cell and described second capacity cell measured during test pattern; And
Wherein, in the normal mode of operation, described first capacity cell and described second capacity cell are coupled as the first capacity cell pair, and are configured in response to the acceleration on first direction and change electric capacity.
19. methods as claimed in claim 18,
Wherein, under described normal mode of operation, use at least one compensation condenser to eliminate any common mode voltage, and
Wherein, during described test pattern, during described second capacity cell of measurement, described compensation condenser and described second capacity cell are electrically coupled to the described first input end of Differential Input adc circuit.
20. methods as claimed in claim 12, wherein, the electric capacity measuring the second capacity cell of described MEMS sensor comprises: the electric capacity of the second capacity cell of acceleration measurement-electric capacity MEMS sensor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261620153P | 2012-04-04 | 2012-04-04 | |
| US61/620,153 | 2012-04-04 |
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| CN103364590A CN103364590A (en) | 2013-10-23 |
| CN103364590B true CN103364590B (en) | 2015-11-18 |
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| CN2013201716166U Withdrawn - After Issue CN203275442U (en) | 2012-04-04 | 2013-04-08 | Sensor circuit |
| CN201310118845.6A Active CN103364590B (en) | 2012-04-04 | 2013-04-08 | Sensor circuit and the method that MEMS sensor is tested |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8739626B2 (en) | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
| EP2616388A4 (en) | 2010-09-18 | 2014-08-13 | Fairchild Semiconductor | Sealed packaging for microelectromechanical systems |
| US9352961B2 (en) | 2010-09-18 | 2016-05-31 | Fairchild Semiconductor Corporation | Flexure bearing to reduce quadrature for resonating micromachined devices |
| CN103221779B (en) | 2010-09-18 | 2017-05-31 | 快捷半导体公司 | The axle inertial sensor of micromechanics monoblock type six |
| EP2616772B1 (en) | 2010-09-18 | 2016-06-22 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
| US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
| EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
| WO2012040245A2 (en) | 2010-09-20 | 2012-03-29 | Fairchild Semiconductor Corporation | Through silicon via with reduced shunt capacitance |
| CN103221795B (en) | 2010-09-20 | 2015-03-11 | 快捷半导体公司 | Microelectromechanical pressure sensor including reference capacitor |
| US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
| US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
| KR102034604B1 (en) * | 2012-04-04 | 2019-10-21 | 페어차일드 세미컨덕터 코포레이션 | Self test of mems accelerometer with asics integrated capacitors |
| US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
| EP2648334B1 (en) | 2012-04-05 | 2020-06-10 | Fairchild Semiconductor Corporation | Mems device front-end charge amplifier |
| EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
| EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
| US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
| US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
| US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
| DE102013014881B4 (en) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Enhanced silicon via with multi-material fill |
| KR20160123364A (en) * | 2014-03-14 | 2016-10-25 | 로베르트 보쉬 게엠베하 | Integrated self-test for electro-mechanical capacitive sensors |
| US20170003315A1 (en) * | 2015-06-30 | 2017-01-05 | Freescale Semiconductor, Inc. | Mems sensor devices having a self-test mode |
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| US5751154A (en) * | 1996-03-19 | 1998-05-12 | Mitsubishi Denki Kabushiki Kaisha | capacitive sensor interface circuit |
| CN203275442U (en) * | 2012-04-04 | 2013-11-06 | 快捷半导体(苏州)有限公司 | Sensor circuit |
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| US3231729A (en) * | 1961-03-31 | 1966-01-25 | Systems Inc Comp | Dynamic storage analog computer |
| WO2008042015A2 (en) * | 2006-09-28 | 2008-04-10 | Medtronic, Inc. | Capacitive interface circuit for low power sensor system |
| JP5045616B2 (en) * | 2007-08-30 | 2012-10-10 | 株式会社デンソー | Capacitive physical quantity detector |
| GB2466785B (en) * | 2008-12-30 | 2011-06-08 | Wolfson Microelectronics Plc | Apparatus and method for testing a capacitive transducer and/or associated electronic circuitry |
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2013
- 2013-04-04 KR KR1020130036906A patent/KR102034604B1/en active IP Right Grant
- 2013-04-08 CN CN2013201716166U patent/CN203275442U/en not_active Withdrawn - After Issue
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5751154A (en) * | 1996-03-19 | 1998-05-12 | Mitsubishi Denki Kabushiki Kaisha | capacitive sensor interface circuit |
| CN203275442U (en) * | 2012-04-04 | 2013-11-06 | 快捷半导体(苏州)有限公司 | Sensor circuit |
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| KR102034604B1 (en) | 2019-10-21 |
| CN203275442U (en) | 2013-11-06 |
| CN103364590A (en) | 2013-10-23 |
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