CN103364434B - The hemisphere of large difference sample is to the measuring method of total emissivity - Google Patents
The hemisphere of large difference sample is to the measuring method of total emissivity Download PDFInfo
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- CN103364434B CN103364434B CN201310146530.2A CN201310146530A CN103364434B CN 103364434 B CN103364434 B CN 103364434B CN 201310146530 A CN201310146530 A CN 201310146530A CN 103364434 B CN103364434 B CN 103364434B
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000004020 conductor Substances 0.000 claims abstract description 21
- 238000012360 testing method Methods 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 230000003595 spectral effect Effects 0.000 claims description 9
- 238000001931 thermography Methods 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 3
- 238000007707 calorimetry Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 description 4
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- 238000002360 preparation method Methods 0.000 description 2
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- 206010020843 Hyperthermia Diseases 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
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Abstract
The present invention specifically discloses a kind of measuring method of hemisphere to total emissivity of large difference sample, its step comprises: choose tape conductor material sample, heated sample under vacuum conditions, obtains the sample surface temperature field distribution under thermal-stable state with radiant temperature field measuring equipment; Described sample is axially divided into multiple infinitesimal control volume along it, sets up the steady state energy balance equation of infinitesimal control volume; Based on the surface temperature field distribution of sample and the voltage and current at sample two ends, the hemisphere calculating sample under thermal-stable state is to the numeric distribution of emissivity with temperature.This method of the present invention is applicable to measure the hemisphere of the conductor material sample with large temperature gradient distribution to total emissivity, overcome the requirement of homogeneous temperature test section of technical limitation existing stable state calorimetry has to(for) sample, greatly reduce the restriction to sample size specification, simple possible.
Description
Technical field
The present invention relates to conductor material hemisphere to total emissivity fields of measurement, particularly relate to a kind of measuring method of hemisphere to total emissivity of large temperature difference conductor material sample.
Background technology
Hemisphere is one of important thermal physical property parameter of material to total emissivity, characterizes the surface heat radianting capacity of material, is the important foundation physical data of research actinometry, radiation heat transmission and Thermal Efficiency Analysis.Along with new material is in the widespread use of the high-technology field such as energy source and power and Aero-Space, to the measurement of total emissivity, more active demands are proposed to hemisphere, compared to other thermal physical property parameters, hemisphere to total emissivity measuring method and technical research still abundant not, the hemisphere of different materials still lacks to total emissivity data, needs to measure the hemisphere of acquisition object to total emissivity by accurate experiment.
At present, material hemisphere mainly contains radiation spectroscopy and calorimetry to the measuring method of total emissivity.Calorimetry because of its device structure simple, easy to operate, degree of accuracy is higher to be widely used, and it can be divided into again transient state calorimetry and stable state calorimetry.The experimental principle of stable state calorimetry is by measuring the heat exchange amount of sample under thermal equilibrium state and surface temperature, calculate the hemisphere of material surface to total emissivity, domestic and international researcher have employed different sample specifications and type of heating, defines multiple steady-state quantity thermal technology application model.Such as:
A. heating plate is utilized to heat material bottom surface in a vacuum chamber, by measuring electric current, voltage and material upper surface temperature, the full wavelength emission rate of Calculating material;
B. two panels sample sheet being close to the two sides of heating plate, utilizing the wire of heating plate to be hung in a vacuum chamber, pass to current flow heats, by measuring electric power and material surface temperature, solving hemisphere to total emissivity;
C. elongated, belt-shaped sample electrified regulation (being referred to as heat wire method) is under vacuum conditions chosen, more uniform for the centralised temperature of ribbon samples region is considered as test analysis region, and then ensure that the temperature of sample test analyzed area and the accuracy of energy measurement.
At present, the existing hemisphere based on stable state calorimetry is to total emissivity measuring method and system, it is mostly the sample test being applicable to have approaches uniformity Temperature Distribution test section, although the technical requirement of heat wire method by selecting the ribbon samples of longer size can realize heated sample test section temperature approximate homogeneity, but longer heated filament sample preparation for experiment difficulty very big, even for specifically testing sample, this technical requirement cannot be met at all.Therefore, be directed to the hyperthermia radiation thermophysical property measurement application demand of practical conductor material, developing a kind of measuring method of hemisphere to total emissivity being applicable to have large temperature gradient distribution conductor material sample, is work highly significant.
Summary of the invention
(1) technical matters that will solve
The object of this invention is to provide a kind of measuring method of hemisphere to total emissivity of large difference sample, to overcome the conductor material sample that prior art is only applicable to have approaches uniformity Temperature Distribution test section, and cannot to the problem measured large temperature difference sample.
(2) technical scheme
In order to solve the problems of the technologies described above, the hemisphere that the invention provides a kind of large difference sample, to the measuring method of total emissivity, is characterized in that, the step of described method comprises:
S1. choose tape conductor material sample, heat described sample under vacuum conditions, obtain the sample surface temperature field distribution under thermal-stable state with radiant temperature field measuring equipment;
S2. described sample is axially divided into multiple infinitesimal control volume along it, sets up the steady state energy balance equation of infinitesimal control volume;
S3. based on the surface temperature field distribution of sample and the voltage and current at sample two ends, the hemisphere calculating sample under thermal-stable state is to the numeric distribution of emissivity with temperature.
Wherein, in described step S2, sample is axially divided into N number of infinitesimal control volume along it, the temperature in each infinitesimal control volume is consistent, and the steady state energy balance equation of infinitesimal control volume is:
Q
j-ε
j·S
j·σ·(T
j 4-T
e 4)+A
j·λ
j·(T
j+1+T
j-1-2T
j)/l
j＝0
Wherein, j is the numbering of infinitesimal control volume, j=2 ..., N-1, j=1 and j=N represent the border infinitesimal control volume of sample respectively; Q
jfor the heating electric power of sample infinitesimal control volume j, calculated by the voltage and current at sample two ends and obtain; (T
1, T
2... T
n) be the temperature of each infinitesimal control volume, being measured by radiant temperature field measuring equipment and obtain, is measure known quantity; T
ethe temperature of vacuum water-cooling wall, for measuring known quantity; ε
jbe the hemisphere of sample infinitesimal control volume j to total emissivity, namely represent temperature be T
jtime hemisphere to total emissivity, be unknown quantity; σ is Shi Difen-Boltzmann constant, is known quantity; λ
jbe the coefficient of heat conductivity of sample infinitesimal control volume j, namely represent that temperature is T
jtime coefficient of heat conductivity, be known quantity; The length of sample is the length l of L, width w, thickness d, sample infinitesimal control volume j
jthe cross-sectional area A of=L/N, infinitesimal control volume j
jthe surface area S of=wd, infinitesimal control volume j
j=2l
j(w+d) measurement known quantity, is.
Wherein, because the resistivity of sample makes linear change with temperature, then the heating electric power Q of infinitesimal control volume j
jfor:
Q
j＝I
2·R
j,0(1+ρT
j)
In formula, j=1 ..., N; I is the electric current flowing through sample, can record, for measuring known quantity; ρ is sample resistivity temperature coefficient, is known quantity; R
j, 0length when being 0 DEG C is l
jthe resistance of infinitesimal control volume because the identical length etc. of N number of infinitesimal control volume, the resistance R of infinitesimal control volume
j, 0also all equal, be R
0;
The voltage U at sample two ends is:
According to the temperature T of voltage U, electric current I, infinitesimal control volume
jand sample resistivity temperature coefficient ρ calculates the resistance R of infinitesimal control volume
0, by Q
j=I
2r
j, 0(1+ ρ T
j) substitute into steady state energy balance equation, the energy equation of simultaneous solution infinitesimal control volume, just obtain sample hemisphere under stable heated condition to the numeric distribution of total emissivity with temperature.
Wherein, described radiant temperature field measuring equipment carries out demarcation calibration before use.
Wherein, the content that calibration demarcated by described radiant temperature field measuring equipment comprises: radiant temperature field measuring equipment arranges the distance between sample and radiant temperature field measuring equipment before using, and the optical path adjusting radiant temperature field measuring equipment is perpendicular to sample surfaces; The spectral transmission rate score of the optical window in test path, radiant temperature field measuring equipment can observe sample surfaces by the optical window of vacuum chamber wall; The spectral emissions rate score of test sample, spectral range should be corresponding with the measure spectrum of radiant temperature field measuring equipment.
Wherein, described radiant temperature field measuring equipment is thermal imaging system.
Wherein, be fixed on sample clamp in described step S1 by tape conductor sample two ends, be positioned in the vacuum chamber of water-cooled inwall, tape conductor sample two ends electrified regulation is to equilibrium temperature state.
Wherein, the temperature test scope of described sample is 300 DEG C ~ 2000 DEG C.
(3) beneficial effect
The hemisphere of large thermoelectric material of the present invention is to the sample surface temperature field distribution under the measuring method radiant temperature field measuring equipment acquisition thermal-stable state of total emissivity, then sample is axially divided into multiple infinitesimal control volume along it, set up the steady state energy balance equation of infinitesimal control volume, last based on the surface temperature field distribution of sample and the voltage and current at sample two ends, the hemisphere calculating sample under thermal-stable state is to the numeric distribution of emissivity with temperature, this method is applicable to measure the hemisphere of the conductor material with large temperature gradient distribution to total emissivity, overcome the requirement of homogeneous temperature test section of technical limitation existing stable state calorimetry has to(for) sample, greatly reduce the restriction to sample size specification, simple possible, simultaneously, heated sample surface temperature field distribution information is obtained by adopting radiant temperature field measuring equipment, this test mode is more more superior than contact thermocouple point thermometric mode, avoid the complex operations of installing thermopair, thermocouple wire conductive heat loss affects and only can realize the technological deficiencies such as finite point measurement.
Embodiment
Below in conjunction with drawings and Examples, embodiments of the present invention are described in further detail.Following examples for illustration of the present invention, but can not be used for limiting the scope of the invention.
The hemisphere of the large thermoelectric material of the present embodiment is applicable to measure the hemisphere of the conductor material with large temperature gradient distribution to total emissivity to the measuring method of total emissivity, and the concrete steps of described method comprise:
S1. choose tape conductor material sample, tape conductor sample two ends are fixed on sample clamp, are positioned in the vacuum chamber of water-cooled inwall, vacuum chamber is evacuated to 1.0 × 10
-3pa, by tape conductor sample two ends electrified regulation to equilibrium temperature state, temperature range is preferably 300 DEG C ~ 2000 DEG C.
The temperature distribution evenness of tape conductor material sample is relevant to sample length size, and sample length is longer, and Temperature Distribution is more even, and the realization of sample temperature homogeneity is comparatively harsh technical requirement, makes sample preparation comparatively difficult.For ease of processing the less tape conductor material sample of selection length, (length is 100mm to the present embodiment, width is 10mm, thickness is 0.1mm), but, due to sample clamp two ends cooling effect, can there is larger thermograde at this shorter sample axial direction, namely tape conductor material sample Axial Temperature Distribution is uneven.
In order to overcome the problems referred to above, under thermal-stable state, the present embodiment adopts the radiant temperature field measuring equipment of cordless to carry out temperature survey to tape conductor material sample, radiant temperature field measuring equipment is after demarcating calibration, can measure and obtain heated sample surface temperature field distribution information, the follow-up hemisphere that solves that is measured as of sample temperature field distribution information provides important data source to total emissivity.This temperature survey mode is more more superior than contact thermocouple point thermometric mode, avoids the complex operations of installation thermopair, thermocouple wire conductive heat loss impact and only can realize the technological deficiencies such as finite point measurement.
Thermal imaging system selected by the radiant temperature field measuring equipment of the present embodiment, and its content of demarcating calibration comprises: before a) thermal imaging system uses, arrange the distance of sample and thermal imaging system, and the optical path adjusting thermal imaging system is perpendicular to sample surfaces; B) know the spectral transmission rate score of the optical window in test path, thermal imaging system can observe sample surfaces by the optical window of vacuum chamber wall; C) know the spectral emissions rate score of test sample, spectral range should be corresponding with the measure spectrum of thermal imaging system.
S2. at stable heated condition, tape conductor material sample Axial Temperature Distribution is uneven, there is larger thermograde, sample length size is greater than its width dimensions and gauge, sample can be regarded along its length as (namely axially) upper one dimension steady heal conduction problem, due to sample, temperature distributing disproportionation is even vertically, cannot by isothermal surface process, therefore, sample is divided into vertically N number of infinitesimal control volume, temperature in each infinitesimal control volume is consistent, and the steady state energy balance equation of infinitesimal control volume is:
Q
j-ε
j·S
j·σ·(T
j 4-T
e 4)+A
j·λ
j·(T
j+1+T
j-1-2T
j)/l
j＝0
Wherein, j is the numbering of infinitesimal control volume, j=2 ..., N-1, j=1 and j=N represent the border infinitesimal control volume of sample respectively; Q
jfor the heating electric power of sample infinitesimal control volume j, calculated by the voltage and current at sample two ends and obtain; (T
1, T
2... T
n) be the temperature of each infinitesimal control volume, being measured by radiant temperature field measuring equipment and obtain, is measure known quantity; T
ethe temperature of vacuum water-cooling wall, for measuring known quantity; ε
jbe the hemisphere of sample infinitesimal control volume j to total emissivity, namely represent temperature be T
jtime hemisphere to total emissivity, be unknown quantity; σ is Shi Difen-Boltzmann constant, is known quantity; λ
jbe the coefficient of heat conductivity of sample infinitesimal control volume j, namely represent that temperature is T
jtime coefficient of heat conductivity, be known quantity; The length of sample is the length l of L, width w, thickness d, sample infinitesimal control volume j
jthe cross-sectional area A of=L/N, infinitesimal control volume j
jthe surface area S of=wd, infinitesimal control volume j
j=2l
j(w+d) measurement known quantity, is.
In the present embodiment, the sample that 100mm is long is divided into 100 infinitesimal control volumes, i.e. N=100, the steady state energy balance equation group of infinitesimal control volume vertically:
S3. because the resistivity of sample makes linear change with temperature, then the heating electric power Q of infinitesimal control volume j
jfor:
Q
j＝I
2·R
j,0(1+ρT
j)
Wherein, j=1 ..., N; I is the electric current flowing through sample, can record, for measuring known quantity; ρ is sample resistivity temperature coefficient, is known quantity; R
j, 0length when being 0 DEG C is l
jthe resistance of infinitesimal control volume because the identical length etc. of N number of infinitesimal control volume, the resistance R of infinitesimal control volume
j, 0also all equal, be R
0.
The voltage U at sample two ends is:
According to the temperature T of voltage U, electric current I, infinitesimal control volume
jand sample resistivity temperature coefficient ρ calculates the resistance R of infinitesimal control volume
0, just obtain heating electric power Q
jabout the temperature T of infinitesimal control volume j
jexpression formula Q
j=I
2r
j, 0(1+ ρ T
j), described expression formula is substituted into steady state energy balance equation, obtains the hemisphere of infinitesimal control volume j to total emissivity ε
jabout the temperature T of infinitesimal control volume j
jsteady state energy balance equation, the energy equation of simultaneous solution infinitesimal control volume, can obtain sample hemisphere under different temperatures to total emissivity numerical value.
Each infinitesimal control volume is regarded as a temperature spot, and so this steady state energy balance equation also just can reflect that sample hemisphere under stable heated condition is to the numeric distribution of total emissivity with temperature.
Embodiments of the invention provide in order to example with for the purpose of describing, and are not exhaustively or limit the invention to disclosed form.Many modifications and variations are apparent for the ordinary skill in the art.Selecting and describing embodiment is in order to principle of the present invention and practical application are better described, and enables those of ordinary skill in the art understand the present invention thus design the various embodiments with various amendment being suitable for special-purpose.
Claims (6)
1. the hemisphere of large difference sample is to a measuring method for total emissivity, it is characterized in that, the step of described method comprises:
S1. tape conductor material sample is chosen, described sample two ends are fixed on sample clamp, be positioned in the vacuum chamber with water-cooled inwall, and by described sample two ends electrified regulation to equilibrium temperature state, obtain the described sample surface temperature field distribution under thermal-stable state with radiant temperature field measuring equipment;
S2. described sample is axially divided into multiple infinitesimal control volume along it, sets up the steady state energy balance equation of infinitesimal control volume;
S3. based on the surface temperature field distribution of described sample and the voltage and current at sample two ends, the hemisphere calculating described sample under thermal-stable state is to the numeric distribution of emissivity with temperature;
In described step S2, sample is axially divided into N number of infinitesimal control volume along it, the temperature in each infinitesimal control volume is consistent, and the steady state energy balance equation of infinitesimal control volume is:
Q
j-ε
j·S
j·σ·(T
j 4-T
e 4)+A
j·λ
j·(T
j+1+T
j-1-2T
j)/l
j＝0
In formula, j is the numbering of infinitesimal control volume, j=2 ..., N-1, j=1 and j=N represent the border infinitesimal control volume of sample respectively; Q
jfor the heating electric power of sample infinitesimal control volume j, calculated by the voltage and current at sample two ends and obtain; (T
1, T
2... T
n) be the temperature of each infinitesimal control volume, being measured by radiant temperature field measuring equipment and obtain, is measure known quantity; T
ethe temperature of the water-cooled inwall of described vacuum chamber, for measuring known quantity; ε
jbe the hemisphere of sample infinitesimal control volume j to total emissivity, namely represent temperature be T
jtime hemisphere to total emissivity, be unknown quantity; σ is Shi Difen-Boltzmann constant, is known quantity; λ
jbe the coefficient of heat conductivity of sample infinitesimal control volume j, namely represent that temperature is T
jtime coefficient of heat conductivity, be known quantity; The length of sample is the length l of L, width w, thickness d, sample infinitesimal control volume j
jthe cross-sectional area A of=L/N, infinitesimal control volume j
jthe surface area S of=wd, infinitesimal control volume j
j=2l
j(w+d) measurement known quantity, is.
2. the hemisphere of large difference sample according to claim 1 is to the measuring method of total emissivity, it is characterized in that, because the resistivity of sample makes linear change with temperature, then and the heating electric power Q of infinitesimal control volume j
jfor:
Q
j＝I
2·R
j,0(1+ρT
j)
Wherein, j=1 ..., N; I is the electric current flowing through sample, can record, for measuring known quantity; ρ is sample resistivity temperature coefficient, is known quantity; R
j, 0length when being 0 DEG C is l
jthe resistance of infinitesimal control volume because the identical length etc. of N number of infinitesimal control volume, the resistance R of infinitesimal control volume
j, 0also all equal, be R
0;
The voltage U at sample two ends is:
According to the temperature T of voltage U, electric current I, infinitesimal control volume
jand sample resistivity temperature coefficient ρ calculates the resistance R of infinitesimal control volume
0, by Q
j=I
2r
j, 0(1+ ρ T
j) substitute into steady state energy balance equation, the energy equation of simultaneous solution infinitesimal control volume, just obtain sample hemisphere under stable heated condition to the numeric distribution of total emissivity with temperature.
3. the hemisphere of large difference sample according to claim 1 is to the measuring method of total emissivity, it is characterized in that, described radiant temperature field measuring equipment carries out demarcation calibration before use.
4. the hemisphere of large difference sample according to claim 3 is to the measuring method of total emissivity, it is characterized in that, the content that calibration demarcated by described radiant temperature field measuring equipment comprises: before radiant temperature field measuring equipment uses, distance between sample and radiant temperature field measuring equipment is set, and the optical path adjusting radiant temperature field measuring equipment is perpendicular to sample surfaces; The spectral transmission rate score of the optical window in test path, radiant temperature field measuring equipment can observe sample surfaces by the optical window of vacuum chamber wall; The spectral emissions rate score of test sample, spectral range is corresponding with the measure spectrum of radiant temperature field measuring equipment.
5. the hemisphere of large difference sample according to claim 1 is to the measuring method of total emissivity, it is characterized in that, described radiant temperature field measuring equipment is thermal imaging system.
6. according to the hemisphere of the large difference sample in claim 1-5 described in any one to the measuring method of total emissivity, it is characterized in that, the Range of measuring temp of described sample is 300 DEG C ~ 2000 DEG C.
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| CN104076060B (en) * | 2014-06-09 | 2017-12-15 | 清华大学 | A kind of transient test System and method for of spectral emissivity |
| CN104048945B (en) * | 2014-06-09 | 2017-01-25 | 清华大学 | Spectral emissivity steady testing system and method |
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| JP4528954B1 (en) * | 2009-03-06 | 2010-08-25 | 独立行政法人産業技術総合研究所 | Method and apparatus for measuring specific heat capacity and hemispherical total emissivity of conductive samples |
| JP5414068B2 (en) * | 2010-09-15 | 2014-02-12 | 独立行政法人産業技術総合研究所 | Method and apparatus for measuring specific heat capacity and hemispherical total emissivity of conductive samples |
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2013
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Non-Patent Citations (3)
| Title |
|---|
| A steady-state measurement system for total hemispherical emissivity;Tairan Fu et al.;《Measurement Science and Technology》;20120111;第23卷;第1-5节 * |
| Experimental research on the influence of surface conditions on the total hemispherical emissivity of iron-based alloys;Tairan Fu et al.;《Experimental Thermal and Fluid Science》;20120313;第40卷;第159-167页 * |
| 辐射测温方法的表面温度场测量条件;王安全，程晓舫;《中国科学技术大学学报》;20020630;第32卷(第3期);第314-319页 * |
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