CN103364432A - Measurement method, measurement apparatus, and computer program product - Google Patents

Measurement method, measurement apparatus, and computer program product Download PDF

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Publication number
CN103364432A
CN103364432A CN201210447502XA CN201210447502A CN103364432A CN 103364432 A CN103364432 A CN 103364432A CN 201210447502X A CN201210447502X A CN 201210447502XA CN 201210447502 A CN201210447502 A CN 201210447502A CN 103364432 A CN103364432 A CN 103364432A
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China
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electrothermal module
temperature
hot
thermoelectricity
cold junction
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Chinese (zh)
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简恒杰
戴明吉
吴升财
谢慧霖
黄菁仪
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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Abstract

A measurement method, a measurement apparatus, and a computer program product are provided. The measurement method is used for measuring a thermoelectric module. The method comprises following steps. A stable temperature is provided for the thermoelectric module. A current is applied to the thermoelectric module to turn both sides of the thermoelectric module into a hot side and a cold side. The temperature of the hot side is higher than that of the cold side. A terminal voltage of the thermoelectric module, a hot side temperature of the hot side, and a cold side temperature of the cold side are measured at each of multiple time points in first period. A thermoelectric relationship between the terminal voltages and differences between the hot side temperatures and the corresponding cold side temperatures is obtained according to the terminal voltages, the hot side temperatures, and the cold side temperatures. At least one first parameter of the thermoelectric module is estimated according to the thermoelectric relationship.

Description

Measuring method, measurement mechanism and computer program
Technical field
The present invention relates to a kind of measuring method, measurement mechanism and computer program, and be particularly related to a kind of measuring method, measurement mechanism and computer program in order to measure electrothermal module.
Background technology
The at present correlative study of the application of thermoelectric effect (thermoelectric effect) is in a brand-new stage.Several years ago the Research Emphasis of pyroelectric technology is the exploitation of high performance thermoelectric material, and therefore with regard to measuring technique, the emphasis of focusing at that time is partial to the measurement of the thermoelectric property of material.In recent years, thermoelectric relevant research began by material end steering module end, that is the overall performance that begins to focus on after whole electrothermal module makes up shows.
Yet an electrothermal module has made up a plurality of thermoelectric P/N pins to (thermoelectric pillar P/N pairs), metal electrode lines (metal electrode traces), weld layer (solder layers) and two ceramic substrates (ceramic substrate).These elements are after combination, and whole thermoelectric property can be different from the thermoelectric property of originally simple thermoelectric pin.For example, between thermoelectric pin and the weld layer atom diffusion problem will be arranged, therefore reduce the thermoelectricity capability of thermoelectric pin in the module.And aspect the heat transmission of the cold and hot end of module, between thermoelectric pin and weld layer, weld layer and electrode wires, electrode wires and the substrate, all have unknown but obvious interface thermal resistance.Therefore, in practical application, the in esse temperature difference of thermoelectric pin will be applied to less than us the temperature difference at module two ends, and this will cause actual performance and estimate between the performance to some extent difference, and this difference in advance and can't accurately estimate.
Summary of the invention
One embodiment of the invention propose a kind of measuring method, in order to measure electrothermal module.This measuring method comprises the following steps: to provide equilibrium temperature to electrothermal module.Apply electric current to electrothermal module, so that the two ends of electrothermal module become respectively hot junction and cold junction, wherein the temperature in hot junction is greater than the temperature of cold junction.Each time point of a plurality of time points within the very first time is measured terminal voltage, the hot-side temperature in hot junction and the cold junction temperature of cold junction of electrothermal module.According to these measured terminal voltages of these time points in the very first time, these hot-side temperatures and these cold junction temperatures, calculate a plurality of differences of these hot-side temperatures and corresponding these cold junction temperatures, to obtain these terminal voltages with respect to the thermoelectricity relation of these differences.At least one the first parameter value that concerns to estimate electrothermal module according to thermoelectricity.
One embodiment of the invention propose a kind of measurement mechanism, in order to measure electrothermal module.Measurement mechanism comprises power-supply unit, voltage measurement unit, temperature measurement unit and processing unit.To electrothermal module, so that the two ends of electrothermal module become respectively hot junction and cold junction, wherein the temperature in hot junction is greater than the temperature of cold junction for induced current for power-supply unit.Each time point of a plurality of time points of voltage measurement unit within the very first time is measured the terminal voltage of electrothermal module.Each time point of these time points of temperature measurement unit within the very first time is measured the hot-side temperature in hot junction and the cold junction temperature of cold junction.Processing unit is according to these measured terminal voltages of these time points in the very first time, these hot-side temperatures and these cold junction temperatures, calculate a plurality of differences of these hot-side temperatures and corresponding these cold junction temperatures, to obtain these terminal voltages with respect to the thermoelectricity relation of these differences.Processing unit concerns to estimate at least one first parameter value of electrothermal module according to thermoelectricity.
One embodiment of the invention propose a kind of computer program, are stored in the computer readable recording medium storing program for performing, to measure electrothermal module.This computer program comprises the 1st programmed instruction, the 2nd programmed instruction, the 3rd programmed instruction, the 4th programmed instruction and the 5th programmed instruction.The 1st programmed instruction is for providing equilibrium temperature to electrothermal module.The 2nd programmed instruction is for applying electric current to electrothermal module, so that the two ends of electrothermal module become respectively hot junction and cold junction, wherein the temperature in hot junction is greater than the temperature of cold junction.The 3rd programmed instruction is terminal voltage, the hot-side temperature in hot junction and the cold junction temperature of cold junction that each time point of a plurality of time points within the very first time is measured electrothermal module.The 4th programmed instruction is according to these measured terminal voltages of these time points in the very first time, these hot-side temperatures and these cold junction temperatures, calculate a plurality of differences of these hot-side temperatures and corresponding these cold junction temperatures, to obtain these terminal voltages with respect to the thermoelectricity relation of these differences.The 5th programmed instruction is for concerning to estimate at least one first parameter value of electrothermal module according to thermoelectricity.
For above-mentioned feature of the present invention can be become apparent, embodiment cited below particularly, and cooperate accompanying drawing to be described in detail below.
Description of drawings
Fig. 1 is the synoptic diagram of the measurement mechanism of one embodiment of the invention.
Fig. 2 is the synoptic diagram of measuring method that is applied to the measurement mechanism of Fig. 1.
Fig. 3 is the synoptic diagram of straight line of the resulting thermoelectric relation equation formula representative of measuring method of the measurement mechanism of Fig. 1 and Fig. 2.
Fig. 4 illustrates the measurement mechanism of Fig. 1 when measuring electrothermal module, and the hot-side temperature of electrothermal module, cold junction temperature and terminal voltage are along with the variation relation of Measuring Time.
Fig. 5 illustrates the measurement mechanism of Fig. 1 when measuring electrothermal module, and the terminal voltage of electrothermal module is with respect to the variation relation of the difference of hot-side temperature and cold junction temperature.
Fig. 6 illustrates the measurement mechanism of Fig. 1 when measuring electrothermal module, and the hot-side temperature that measures, cold junction temperature and thermal conductance value are along with the variation relation of Measuring Time.
Fig. 7 is the synoptic diagram of the measurement mechanism of another embodiment of the present invention.
Fig. 8 is the synoptic diagram of the measurement mechanism of another embodiment of the present invention.
Fig. 9 is the again synoptic diagram of the measurement mechanism of an embodiment of the present invention.
Figure 10 is the synoptic diagram of the measurement mechanism of another embodiment of the present invention.
Figure 11 is the process flow diagram of measuring method that is applicable to the measurement mechanism of Figure 10.
[main element symbol description]
100: electrothermal module
110: first substrate
120: second substrate
130: patterned conductive layer
140: patterned conductive layer
150: thermoelectric pin
152:P type semiconductor pin
154:N type semiconductor pin
200,200a, 200b, 200c, 200d: measurement mechanism
210: power-supply unit
220: voltage measurement unit
230: temperature measurement unit
240: processing unit
250: computer readable recording medium storing program for performing
260,310: heat insulator
270,280,290: temp-controlling element
272: heat-generating units
282: runner
320: constant temperature oven
A: sectional area
H: highly
I: electric current
S110~S170, S160 ', S170 ': step
Embodiment
Fig. 1 is the synoptic diagram of the measurement mechanism of one embodiment of the invention, Fig. 2 is the synoptic diagram of measuring method that is applied to the measurement mechanism of Fig. 1, and Fig. 3 is the synoptic diagram of straight line of the resulting thermoelectric relation equation formula representative of measuring method of the measurement mechanism of Fig. 1 and Fig. 2.Please refer to Fig. 1 to Fig. 3, the measurement mechanism 200 of present embodiment is in order to measure electrothermal module 100.Electrothermal module 100 comprises first substrate 110, second substrate 120 and the M thermoelectric pin 150 to being electrically connected to each other.M is positive integer, and every a pair of thermoelectric pin 150 connects first substrate 110 and second substrate 120.In the present embodiment, first substrate 110 for example is ceramic substrate with second substrate 120.Yet in other embodiments, first substrate 110 also can be the substrate of other materials with second substrate 120.In addition, in the present embodiment, every a pair of thermoelectric pin 150 comprises P-type semiconductor pin 152 and N-type semiconductor pin 154, and P-type semiconductor pin 152 connects first substrate 110 and second substrate 120, and N-type semiconductor pin 154 connects first substrate 110 and second substrate 120.The material of P-type semiconductor pin 152 for example is P type bismuth tellurium alloy (Bi-Te alloy), P type lead-terllurium alloy (Pb-Te alloy), P type bismuth lead-terllurium alloy (Bi-Sb-Te alloy), P type sige alloy (Si-Ge alloy) or other P-type semiconductors, and the material of N-type semiconductor pin 154 for example is N-type bismuth tellurium alloy, N-type lead-terllurium alloy, N-type bismuth lead-terllurium alloy, N-type sige alloy or other N-type semiconductors.
In the present embodiment, electrothermal module 100 also comprises patterned conductive layer 130 and patterned conductive layer 140, is disposed at respectively on first substrate 110 and the second substrate 120.Patterned conductive layer 130 gets up this M with patterned conductive layer 140 to thermoelectric pin 150 series windings, and contacts with these N-type semiconductor pins 152 and the mode that these P-type semiconductor pins 154 alternately join.In addition, in the present embodiment, every a pair of thermoelectric pin 150 is connected to first substrate 110 by patterned conductive layer 130, and is connected to second substrate 120 by patterned conductive layer 140.Patterned conductive layer 130 for example is metal with the material of patterned conductive layer 140.
Measurement mechanism 200 comprises power-supply unit 210, voltage measurement unit 220, temperature measurement unit 230 and processing unit 240.Power-supply unit 210 supply electric current I are to electrothermal module 100, so that the two ends of electrothermal module 100 become respectively hot junction (hot side) and cold junction (cold side), wherein the temperature in hot junction is greater than the temperature of cold junction.In the present embodiment, electric current I is essentially fixed current, and electric current I sequentially flow through the series winding M to thermoelectric pin 150.In other words, alternately flow through these N-type semiconductor pins 152 and these P-type semiconductor pins 154 of electric current I.In addition, in the present embodiment, when supplying electric current I to electrothermal module 100, the temperature of first substrate 110 can descend and form cold junction, and the temperature of second substrate 120 can rise and form the hot junction.
In the present embodiment, measurement mechanism 200 also comprises heat insulator 260 and temperature control (temperature control) element 270.Heat insulator 260 is disposed on the cold junction (being first substrate 110).Temp-controlling element 270 is disposed on the hot junction (being second substrate 120), with the temperature in regulation and control hot junction.Therefore, applying electric current I to the electrothermal module 100, temp-controlling element 270 can provide first stable temperature to electrothermal module 100.In the present embodiment, for example for having the hot plate (hot plate) of heat-generating units 272, wherein heat-generating units 272 for example is thermal resistance (thermal resistance) or other heater element to temp-controlling element 270.
Each time point of a plurality of time points of voltage measurement unit 220 within the very first time is measured the terminal voltage V of electrothermal module 100, is the end of integral body of series winding and these N-type semiconductor pins 152 that alternately join and these P-type semiconductor pins 154 and the voltage between the other end.The very first time for example is from beginning to supply the hot-side temperature T of electric current I to the time point of electrothermal module 100 to the hot junction of electrothermal module 100 hCold junction temperature T with cold junction cDifference DELTA T reach in fact stable time point.For example, difference DELTA T can reach stable in 20 seconds after beginning to supply electric current I, and then the very first time is in 20 seconds that begin to supply after the electric current I.
Each time point of these time points of temperature measurement unit 230 within the very first time is measured the hot-side temperature T in hot junction hAnd the cold junction temperature T of cold junction cIn the present embodiment, temperature measurement unit 230 comprises and the thermocouple (thermal couple) towards the Surface Contact of heat insulator 260 of first substrate 110 that it can measure cold junction temperature T cIn addition, temperature measurement unit 230 comprises also and the thermocouple towards the Surface Contact of temp-controlling element 270 of second substrate 120 that it can measure hot-side temperature T hMoreover temperature measurement unit 230 also comprises the interpretation platform that is electrically connected with above-mentioned two thermocouple, but the measured temperature signal of its interpretation thermocouple.In other embodiments, also can adopt other temperature sensors to replace above-mentioned thermocouple.
Processing unit 240 is according to measured these terminal voltages V of these time points in the very first time, these hot-side temperatures T hAnd these cold junction temperatures T c, calculate these hot-side temperatures T hWith corresponding these cold junction temperatures T cDifference DELTA T, to obtain these terminal voltages V with respect to the thermoelectricity of these difference DELTA T relation.In the present embodiment, processing unit 240 for example is the central processing unit (central processing unit, CPU) of computing machine.Yet in other embodiments, processing unit 240 also can be digital signal processor (digital signal processor, DSP), DLC (digital logic circuit) or other suitable processor of other controls and calculate platform.In the present embodiment, one group be can measure on each time point of the time point of these within the very first time and V, T comprised cAnd T hData, wherein processing unit 240 can be with T hWith T cSubtract each other and obtain Δ T, and according to these measured V of these time points in the very first time, these T hAnd these T cObtain these V and comprise the data that namely comprise V and Δ T according to these V and corresponding these Δs T(according to many groups with respect to the method for the thermoelectricity of these Δs T relation) do linear regression, to obtain thermoelectric relation equation formula.In the present embodiment, this thermoelectric relation equation formula is equation of line, and the skew lines that the straight line of its representative such as Fig. 3 illustrate.In Fig. 3, the longitudinal axis represents terminal voltage V, and transverse axis represents difference DELTA T.
The electric field equation formula of thermoelectric material such as following (1) formula:
V=SΔT’+IR (1)
Wherein, V is the terminal voltage of electrothermal module 100, S is the seat seebeck coefficient (Seebeck coefficient) of electrothermal module 100, Δ T ' is the mean temperature difference at the two ends of thermoelectric pin 150, for example deducts resulting mean temperature difference after the medial temperature of an end of close patterned conductive layer 130 of thermoelectric pin 150 for the medial temperature of an end of the close patterned conductive layer 140 of thermoelectric pin 150.Because the temperature difference of electrothermal module 100 is produced by thermoelectric pin 150, and because the cold junction (being first substrate 110) of electrothermal module 100 contact heat insulator 260, therefore the temperature difference of the hot junction of thermoelectric pin 150 and cold junction (being the resulting difference after the temperature on the surface of heat insulator 260 that the temperature towards the surface of temp-controlling element 270 of second substrate 120 deducts first substrate 110) Δ T will be similar to the mean temperature difference Δ T ' at the two ends of thermoelectric pin 150 very much, therefore the Δ T ' in (1) formula can be replaced with Δ T, and forms following (2) formula:
V=SΔT+IR (2)
(2) formula is the equation of line relevant with V and Δ T of theoretical gained, the resulting equation of line relevant with V and Δ T of the linear regression that above-mentioned thermoelectric relation equation formula then is by experiment data, the thermoelectric relation equation formula of therefore testing gained can be similar to theoretical gained (2) formula.So, (2) formula can be considered as thermoelectric relation equation formula.
In addition, processing unit 240 is estimated at least one first parameter value of electrothermal module 100 according to above-mentioned thermoelectric relation (being above-mentioned thermoelectric relation equation formula).In the present embodiment, the first parameter value that estimates has two kinds, is respectively the seat seebeck coefficient S of electrothermal module 100 and the interior resistance value R of electrothermal module 100.In the present embodiment, because thermoelectric relation equation formula can have linear regression to push away, and be known (namely such as (2) formula), therefore in the present embodiment, processing unit 240 is with the slope (i.e. the front coefficient S of Δ T in (2) formula) of the straight line of the thermoelectric relation equation formula representative seat seebeck coefficient S as electrothermal module 100.
In addition, in the present embodiment, processing unit 240 with the intercept of thermoelectric relation equation formula and a coordinate axis (for example longitudinal axis) divided by the size of electric current I after resulting value as the interior resistance value R of electrothermal module 100, wherein this coordinate axis is hot-side temperature T in the thermoelectric relation equation formula hWith cold junction temperature T cDifference DELTA T be zero axle.Particularly, when with Δ T=0 substitution (2) formula, can obtain V=IR, that is IR is that thermoelectric relation equation formula and Δ T are the intercept of zero axle (being the longitudinal axis).Because I is the electric current that power-supply unit 210 is supplied, and be known, thus with IR divided by I after, can calculate the interior resistance value R of electrothermal module 100.
In the present embodiment, temperature measurement unit 230 is measured the cold junction temperature T of cold junction in the second time after the very first time c, and processing unit 240 is according to the first parameter value (for example seat seebeck coefficient S and interior resistance value R) and according to the cold junction temperature T in the second time cEstimate the second parameter value.In the present embodiment, the second time was the hot-side temperature T in the hot junction of electrothermal module 100 hCold junction temperature T with cold junction cDifference DELTA T reach in fact and stablize the later time.For example, difference DELTA T can reach stable in 20 seconds after beginning to supply electric current I, and the second time was 20 seconds later times that begin to supply after the electric current I.For example, can record cold junction temperature T at the time point (for example beginning to supply electric current I later the 30th second) that Δ T reaches after stablizing c, or on Δ T reaches a plurality of different time point after stable, record respectively a plurality of T c, and then with these T cAverage, and obtain an average cold junction temperature T c
In the present embodiment, processing unit 240 is according to S, I, T c, R and Δ T estimate the thermal conductance value K of electrothermal module 100.For example, processing unit 240 can calculate (SIT c-I 2R/2)/and the result of Δ T, to obtain the thermal conductance value K of electrothermal module 100, wherein T cIt is the numerical value substitution with absolute temperature (being kraft temperature (Kelvin temperature)).Particularly, the energy conservation equation formula of thermoelectric material such as following (3) formula:
Q c = SIT c ′ - 1 2 I 2 R - KΔT ′ - - - ( 3 )
Wherein, Q cThe heat that absorbs for the cold junction of thermoelectric pin 150, and T c' then be the temperature (it is absolute temperature) of the cold junction of thermoelectric pin 150, also be the temperature of an end of close patterned conductive layer 130 of the thermoelectric pin 150 of Fig. 1.K is the thermal conductance value K of electrothermal module 100 integral body.In addition, the physical significance of other S, I, R and Δ T ' then can be consulted above, no longer repeats at this.Because the cold junction of electrothermal module 100 is provided with heat insulator 260, so Q cCan be considered and equal 0, and T c' be similar to the cold junction temperature T of electrothermal module 100 c(being the surface temperature towards heat insulator 260 of first substrate 110).With the Q in (3) formula c, T c' and Δ T ' respectively with 0, T cAnd after the Δ T substitution, just (3) formula can be rewritten into following formula:
K = 1 ΔT ( SIT c - 1 2 I 2 R ) - - - ( 4 )
Therefore, according to (4) formula, just can be via calculating (SIT c-I 2R/2)/result of Δ T, and obtain the thermal conductance value K of electrothermal module 100.
The measurement mechanism 200 of present embodiment utilizes electrothermal module 100 is applied electric current I in the near future, the transient state of the terminal voltage V of the hot junction of electrothermal module 100 and the temperature difference of cold junction (being Δ T) and generation thereof concerns, tries to achieve seat seebeck coefficient S and the interior resistance value R of electrothermal module 100.Therefore, the measurement mechanism 200 of present embodiment can record the thermoelectric parameter (such as S and R) of electrothermal module 100 integral body at short notice.The overall thermal electrical property that is difficult to estimate from the thermoelectric property of thermoelectric pin electrothermal module is arranged compared to known technology, the measurement mechanism 200 of present embodiment is owing to can directly record the thermoelectric parameter of electrothermal module 100 integral body, therefore can assess the actual thermoelectric property of electrothermal module 100 integral body, and then can allow the user assess comparatively exactly pyroelecthc properties and the thermoelectrical efficiency of electrothermal module 100.
In addition, when Δ T reaches when stablizing in fact, the measurement mechanism 200 of present embodiment also can be by measuring cold junction temperature T c, and calculate by this thermal conductance value K of electrothermal module 100 integral body.Therefore, the measurement mechanism 200 of present embodiment at short notice (in 1 minute) record the multinomial thermoelectric parameter (such as three thermoelectric parameters such as S, R and K) of electrothermal module 100.Because three parameters such as S, the R of electrothermal module 100 and K all can record, therefore can assess exactly the quality of the performance of electrothermal module 100.
In addition, the average seat seebeck coefficient S of each thermoelectric pin 150 of electrothermal module 100 Avg, average resistivity ρ and evenly heat transmissibility factor k and the seat seebeck coefficient S of electrothermal module 100 integral body, interior resistance value R and thermal conductance value K have respectively the conversion relation of following (5) formula, (6) formula and (7) formula:
S avg = S 2 M - - - ( 5 )
ρ = R A 2 M × h - - - ( 6 )
k = K h 2 M × A - - - ( 7 )
Wherein, A is that single thermoelectric pin 150 is substantially perpendicular to by the sectional area (being the sectional area of the horizontal direction of thermoelectric pin 150 in figure among Fig. 1) on its direction of electric current I, and h is that thermoelectric pin 150 substantially is parallel to by the height (be thermoelectric pin 150 vertical height in the drawings, namely patterned conductive layer 130 is to the distance of patterned conductive layer 140) on its direction of electric current I.
Therefore, in the present embodiment, processing unit 240 can namely calculate the seat seebeck coefficient S of electrothermal module divided by 2M(the result of S/2M), to obtain the average seat seebeck coefficient S of each thermoelectric pin 150 AvgIn addition, processing unit 240 can multiply by A with the interior resistance value R of electrothermal module 100, divided by h, namely calculates the result of (RA)/(2Mh) divided by 2M(again), to obtain the electricalresistivityρ of each thermoelectric pin.Moreover processing unit 240 can multiply by h with the thermal conductance value K of electrothermal module 100, divided by A, namely calculates the result of (Kh)/(2MA) divided by 2M(again), to obtain the evenly heat transmissibility factor k of each thermoelectric pin 150.The measurement mechanism 200 of present embodiment is obtaining S Avg, after three parameters such as ρ and k, just can be with this three parameter substitution thermoelectric figure of merit (figure of merit) formula, good and bad with the performance that calculates electrothermal module 100.
Measuring method shown in Figure 2 can be applicable to the measurement mechanism 200 of Fig. 1, to measure electrothermal module 100.For example, measurement mechanism 200 can also comprise computer readable recording medium storing program for performing 250, with the storage computer program.When the programmed instruction in the computer program is written into processing unit 240, just can realize by processing unit 240 measuring method of present embodiment.Computer readable recording medium storing program for performing 250 for example is hard disk drive, soft disk drive, storage card, Portable disk, firmware, CD, ROM (read-only memory) (read only memory, ROM), the recording medium of random access memory (random access memory, RAM) or any program storage instruction (or program storage code).Particularly, the measuring method of present embodiment comprises the following steps.At first, execution in step S110, it is for providing equilibrium temperature to electrothermal module 100, and step S110 can be finished by the 1st programmed instruction of processing unit 240 computer program products.For example, processing unit 240 can order temp-controlling element 270 to provide equilibrium temperature to electrothermal module 100.Then, execution in step S120, it is for applying electric current I to electrothermal module 100, so that the two ends of electrothermal module 100 become respectively hot junction and cold junction, and step S120 can be finished by the 2nd programmed instruction of processing unit 240 computer program products.Afterwards, execution in step S130, it is terminal voltage V, the hot-side temperature T in hot junction of each time point measurement electrothermal module 100 of a plurality of time points within the very first time hAnd the cold junction temperature T of cold junction c, and step S130 can be finished by the 3rd programmed instruction of processing unit 240 computer program products.For example, but processing unit 240 command voltage measuring units 210 come measuring junction voltage V, and can order temperature measurement unit 230 to measure hot-side temperature T hAnd cold junction temperature T c
Then, execution in step S140, it is according to measured these terminal voltages V of these time points in the very first time, these hot-side temperatures T hAnd these cold junction temperatures T c, calculate these hot-side temperatures T hWith corresponding these cold junction temperatures T cA plurality of difference DELTA T, obtaining these terminal voltages V with respect to the thermoelectricity of these difference DELTA T relation, and step S140 can be finished by the 4th programmed instruction of processing unit computer program product.
Come again, execution in step S150, it is at least one the first parameter value (such as seat seebeck coefficient S and interior resistance value R) that concerns to estimate electrothermal module according to thermoelectricity, and step S150 can be finished by the 5th programmed instruction of processing unit 240 computer program products.
In the present embodiment, after step S150, measuring method can comprise the result who the seat seebeck coefficient S of electrothermal module is namely calculated S/2M divided by 2M(), to obtain the average seat seebeck coefficient S of each thermoelectric pin 150 AvgStep, and this step can be finished by the 6th programmed instruction of processing unit 240 computer program products.In addition, measuring method can comprise that the interior resistance value R with electrothermal module 100 multiply by A, divided by h, namely calculate again the result of (RA)/(2Mh) divided by 2M(), with the electricalresistivityρ's that obtains each thermoelectric pin step, and this step can be finished by the 7th programmed instruction of processing unit 240 computer program products.
Afterwards, but execution in step S160, and it is in the second time after the very first time, measures cold junction temperature T c, and step S160 can by the 8th programmed instruction of processing unit 240 computer program products, measure cold junction temperature T with order temperature measurement unit 230 cReach.
Then, but execution in step S170, and it is according to the first parameter value (such as S and R) and according to the cold junction temperature T in the second time cEstimate the second parameter value (such as thermal conductance value K), and step S170 can be reached by the 9th programmed instruction of processing unit 240 computer program products.
Come again, the measuring method of present embodiment can comprise that the thermal conductance value K with electrothermal module 100 multiply by h, divided by A, namely calculate again the result of (Kh)/(2MA) divided by 2M(), with the step of the heat-conduction coefficient k that obtains each thermoelectric pin 150, and this step can be reached by the 10th programmed instruction of processing unit 240 computer program products.
In another embodiment, the execution sequence of above-mentioned the 6th programmed instruction and the 7th programmed instruction and corresponding step thereof also can be after step S160, or after step S170, and the execution sequence of the 6th programmed instruction, the 7th programmed instruction and the 10th programmed instruction and step thereof can be exchanged arbitrarily.
The details of the details of the step that other measuring methods are performed and the programmed instruction of computer program can with reference to above-mentioned description to the performed action of measurement mechanism 200, no longer repeat at this.In addition, the measuring method of present embodiment and computer program also can reach the function of above-mentioned measurement mechanism 200, no longer repeat at this.
Measurement mechanism 200, measuring method and the computer program of present embodiment are to be measured as example with computer automation, but the present invention is not as limit.In other embodiments, measurement mechanism 200 also can adopt semi-automatic measurement or adopt manual measurement with measuring method.
Fig. 4 illustrates the measurement mechanism of Fig. 1 when measuring electrothermal module, the hot-side temperature of electrothermal module, cold junction temperature and terminal voltage are along with the variation relation of Measuring Time, Fig. 5 illustrates the measurement mechanism of Fig. 1 when measuring electrothermal module, the terminal voltage of electrothermal module is with respect to the variation relation of the difference of hot-side temperature and cold junction temperature, and Fig. 6 illustrates the measurement mechanism of Fig. 1 when measuring electrothermal module, and the hot-side temperature that measures, cold junction temperature and thermal conductance value are along with the variation relation of Measuring Time.As shown in Figure 4, hot-side temperature T hWith cold junction temperature T cDifference DELTA T after a period of time (for example 20 seconds), can reach stable, therefore can calculate at this section seat seebeck coefficient S and the interior resistance value R of electrothermal module 100 in the period, and calculate the thermal conductance value of electrothermal module 100 after the period at this section.As shown in Figure 5, the size (for example 150 milliamperes, 300 milliamperes, 500 milliamperes and 750 milliamperes) that provides various electric current I in when actual measurement is during to electrothermal module 100, and resulting terminal voltage V presents linear dependence really with respect to the difference DELTA T of hot-side temperature and cold junction temperature.In addition, under the condition of various electric current, the seat seebeck coefficient S of the electrothermal module 100 that pushes away according to linear relationship is identical haply, and the interior resistance value R of the electrothermal module 100 that pushes away is also identical haply, can verify that thus the measurement mechanism 200 of present embodiment is high with the stability of the resulting data of measuring method.As shown in Figure 6, the thermal conductance value K of electrothermal module 100 after a period of time after beginning to measure (namely beginning to provide electric current I) (for example after 30 seconds) reach stable.Therefore, measure cold junction temperature T cWith the time point of the thermal conductance value K that calculates electrothermal module 100 can 30 seconds after beginning to provide electric current I after.In addition, because the variation of thermal conductance value K is little after 30 seconds, therefore can cold junction temperature T will be measured cBe located in one minute that begins to provide after the electric current I with the time point of the thermal conductance value K that calculates electrothermal module 100 and finish.In other words, measurement mechanism 200 and the measuring method of present embodiment can measure above-mentioned all measured thermoelectric parameters in one minute, so the measurement mechanism 200 of present embodiment can be realized measuring fast with measuring method.
Fig. 7 is the synoptic diagram of the measurement mechanism of another embodiment of the present invention.Please refer to Fig. 7, the measurement mechanism 200a of present embodiment and the measurement mechanism 200 of Fig. 1 are similar, and both difference is that the temp-controlling element 280 of present embodiment is cold drawing (cold plate), and this cold drawing has runner 282, and runner 282 contains fluid.This fluid for example is the fluid of water, acetone, refrigerant, liquid nitrogen or other any portability heats and transferring heat.In addition, in the present embodiment, processing unit 240 can be written into the programmed instruction of computer program, with control temp-controlling element 280.
Fig. 8 is the synoptic diagram of the measurement mechanism of another embodiment of the present invention.Please refer to Fig. 8, the measurement mechanism 200b of present embodiment and the measurement mechanism 200 of Fig. 1 are similar, and both difference is that the temp-controlling element 270(that the temp-controlling element 290 of present embodiment has comprised Fig. 1 simultaneously is hot plate) with the temp-controlling element 280(of Fig. 8 be cold drawing), that is temp-controlling element 290 is the combination of hot plate and cold drawing.Thus, temp-controlling element 290 can have more stable temperature adjusting to electrothermal module 100, and temp-controlling element 290 can be controlled at the temperature of electrothermal module 100 in the how different temperature ranges.
Fig. 9 is the again synoptic diagram of the measurement mechanism of an embodiment of the present invention.Please refer to Fig. 9, the measurement mechanism 200c of present embodiment and the measurement mechanism 200 of Fig. 1 are similar, and both difference is as described below.In the measurement mechanism 200c of present embodiment, dispose heat insulator 310 on the hot junction of electrothermal module 100 (being second substrate 120).In addition, measurement mechanism 200c also comprises constant temperature oven 320, and electrothermal module 100 and these heat insulators 260 and 310 are disposed in the constant temperature oven 320.Constant temperature oven 320 can provide stable environment temperature to electrothermal module 100.In other words, the measuring method of present embodiment places stable environment temperature with electrothermal module 100 and these heat insulators 260 and 310, and processing unit 240 can be written into the programmed instruction of computer program, with control constant temperature oven 320.
In another embodiment, also electrothermal module 100 and these heat insulators 260 and 310 can be placed room temperature, and not place constant temperature oven 320.Because temperature in indoor space does not have too large variation at short notice, do not have too large variation in for example measure at measurement mechanism 200 that 1 minute, so room temperature can be considered stable environment temperature.So, even electrothermal module 100 and these heat insulators 260 and 310 are placed indoor the measurement, also can reach enough and measure accurately.
Figure 10 is the synoptic diagram of the measurement mechanism of another embodiment of the present invention, and Figure 11 is the process flow diagram of measuring method that is applicable to the measurement mechanism of Figure 10.Please refer to Figure 10 and Figure 11, the measurement mechanism 200d of present embodiment and the measurement mechanism 200 of Fig. 1 are similar, and both difference is as described below.In Fig. 1, temp-controlling element 270 is to be disposed on the hot junction (being second substrate 120), and heat insulator 260 is to be disposed on the cold junction (being first substrate 110).Yet in the measurement mechanism 200d of present embodiment, temp-controlling element 270 is to be disposed on the cold junction (being first substrate 110), and heat insulator 260 is to be disposed on the hot junction (being second substrate 120).After present embodiment has been done so displacement of position of components, measuring S, S Avg, during the parameter such as R and ρ, still can keep former method, but during at K and k, then can do following adjustment in amount.
In the present embodiment, temperature measurement unit 230 is measured the hot-side temperature T in hot junction in the second time after the very first time h, and processing unit 240 is according to the first parameter value (for example seat seebeck coefficient S and interior resistance value R) and according to hot cold junction temperature T hEstimate the second parameter value.In addition, in the present embodiment, processing unit 240 is according to S, I, T c, R and Δ T estimate the thermal conductance value K of electrothermal module 100.For example, processing unit 240 can calculate (SIT h+ I 2R/2)/and the result of Δ T, to obtain the thermal conductance value K of electrothermal module 100, wherein T hIt is the numerical value substitution with absolute temperature (being kraft temperature (Kelvin temperature)).As for the evenly heat transmissibility factor k of each thermoelectric pin 150, then can learn by the result that processing unit 240 calculates (Kh)/(2MA).
In the measuring method of present embodiment, step S110 is identical with the measuring method of Fig. 2 to step S150, and step S160 ' then is in the second time after the very first time, measures hot-side temperature T h, and step S160 ' can by the 8th programmed instruction of processing unit 240 computer program products, measure hot-side temperature T with order temperature measurement unit 230 hReach.Then, execution in step S170 ', it is according to the first parameter value (such as S and R) and according to hot-side temperature T hEstimate the second parameter value (such as thermal conductance value K), and step S170 ' can be reached by the 9th programmed instruction of processing unit 240 computer program products.
Other details of other details of the step that the measuring method of present embodiment is performed and the programmed instruction of computer program can with reference to above-mentioned description to the performed action of measurement mechanism 200d, no longer repeat at this.
In other embodiments, the temp-controlling element 270(that is disposed on the cold junction (being first substrate 110) is hot plate) can be cold drawing with the temp-controlling element 280(of Fig. 7 also) or the temp-controlling element 290(of Fig. 8 be the combination of cold drawing and hot plate) replace.
In sum, the measurement mechanism of embodiments of the invention, measuring method and computer program utilization apply electric current in the near future to electrothermal module, the transient state of the terminal voltage of the hot junction of electrothermal module and the temperature difference of cold junction and generation thereof concerns, tries to achieve seat seebeck coefficient and the interior resistance value of electrothermal module.Therefore, the measurement mechanism of embodiments of the invention, measuring method and computer program can record the thermoelectric parameter (such as seat seebeck coefficient and interior resistance value) of electrothermal module integral body at short notice.The overall thermal electrical property that is difficult to estimate from the thermoelectric property of thermoelectric pin electrothermal module is arranged compared to known technology, the measurement mechanism of embodiments of the invention, measuring method and computer program are owing to can directly record the thermoelectric parameter of electrothermal module integral body, therefore can assess the actual thermoelectric property of electrothermal module integral body, and then can allow the user assess comparatively exactly pyroelecthc properties and the thermoelectrical efficiency of electrothermal module.
In addition, when the difference of hot-side temperature and cold junction temperature reaches when stablizing in fact, the measurement mechanism of embodiments of the invention, measuring method and computer program also can pass through to measure cold junction temperature or hot-side temperature, and calculate by this thermal conductance value of electrothermal module integral body.Therefore, the measurement mechanism of embodiments of the invention, measuring method and computer program at short notice (in 1 minute) record the multinomial thermoelectric parameter (such as three thermoelectric parameters such as seat seebeck coefficient, interior resistance value and thermal conductance values) of electrothermal module.Because three thermoelectric parameters such as seat seebeck coefficient, interior resistance value and thermal conductance value of electrothermal module all can record, therefore can assess exactly the quality of the performance of electrothermal module.
Although the present invention with embodiment openly as above; so it is not to limit the present invention, those skilled in the art, without departing from the spirit and scope of the present invention; when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the appended claims person of defining.

Claims (52)

1. a measuring method is characterized in that, in order to measure electrothermal module, this measuring method comprises:
Provide equilibrium temperature to this electrothermal module;
Apply electric current to this electrothermal module, so that the two ends of this electrothermal module become respectively hot junction and cold junction, wherein the temperature in this hot junction is greater than the temperature of this cold junction;
This time point of each of a plurality of time points within the very first time is measured terminal voltage, the hot-side temperature in this hot junction and the cold junction temperature of this cold junction of this electrothermal module;
According to these measured terminal voltages of these time points in this very first time, these hot-side temperatures and these cold junction temperatures, calculate a plurality of differences of these hot-side temperatures and corresponding these cold junction temperatures, to obtain these terminal voltages with respect to the thermoelectricity relation of these differences; And
Estimate at least one first parameter value of this electrothermal module according to this thermoelectricity relation.
2. measuring method as claimed in claim 1, it is characterized in that the method that obtains this thermoelectricity relation comprises: do linear regression according to these differences that these measured terminal voltages of these time points in this very first time are corresponding with these terminal voltages, to obtain thermoelectric relation equation formula.
3. measuring method as claimed in claim 2 is characterized in that estimating that according to this thermoelectricity relation the method for this at least one the first parameter value of this electrothermal module comprises:
With the slope of the straight line of this thermoelectricity relation equation formula representative seat seebeck coefficient as this electrothermal module.
4. measuring method as claimed in claim 3, it is characterized in that this electrothermal module comprises first substrate, second substrate and the M thermoelectric pin to being electrically connected to each other, wherein M is positive integer, every a pair ofly should connect this first substrate and this second substrate by the thermoelectricity pin, and this measuring method also comprises:
With the seat seebeck coefficient of this electrothermal module divided by 2M, to obtain the average seat seebeck coefficient that each should the thermoelectricity pin.
5. measuring method as claimed in claim 2 is characterized in that estimating that according to this thermoelectricity relation the method for this at least one the first parameter value of this electrothermal module comprises:
With the intercept of this thermoelectricity relation equation formula and coordinate axis divided by the size of this electric current after resulting value as the interior resistance value of this electrothermal module, wherein this coordinate axis is zero axle for this difference of this hot-side temperature in this thermoelectricity relation equation formula and this cold junction temperature.
6. measuring method as claimed in claim 5, it is characterized in that this electrothermal module comprises first substrate, second substrate and the M thermoelectric pin to being electrically connected to each other, wherein M is positive integer, every a pair ofly should connect this first substrate and this second substrate by the thermoelectricity pin, and this measuring method also comprises:
The interior resistance value of being somebody's turn to do of this electrothermal module be multiply by A, divided by h, again divided by 2M, to obtain the resistivity that each should the thermoelectricity pin, wherein A be single should the thermoelectricity pin perpendicular to the sectional area on this direction of current, and h for this thermoelectricity pin at the height that is parallel on this direction of current.
7. measuring method as claimed in claim 1, it is characterized in that, also be included in the second time afterwards this very first time, measure this cold junction temperature of this cold junction or this hot-side temperature in this hot junction, and estimate the second parameter value according to this at least one first parameter value and according to this cold junction temperature in this second time or this hot-side temperature.
8. measuring method as claimed in claim 7 is characterized in that this measured in this second time hot-side temperature is respectively Δ T, T with this difference, this cold junction temperature and this hot-side temperature of corresponding this cold junction temperature cAnd T hAnd this electric current is I, the method that obtains this thermoelectricity relation comprises: do linear regression according to measured these terminal voltages these differences corresponding with these terminal voltages of these very first time points, obtaining this thermoelectricity relation equation formula, and estimate that according to this thermoelectricity relation equation formula the method for this at least one the first parameter value of this electrothermal module comprises:
With the slope of the straight line of this thermoelectricity relation equation formula representative seat seebeck coefficient S as this electrothermal module; And
With the intercept of this thermoelectricity relation equation formula and coordinate axis divided by the size of this electric current after resulting value as the interior resistance value R of this electrothermal module, wherein this coordinate axis is zero axle for this difference of this hot-side temperature in this thermoelectricity relation equation formula and this cold junction temperature; And
According to this at least one the first parameter value, and comprise according to the method that this cold junction temperature in this second time or this hot-side temperature estimate this second parameter value:
According to S, I, T c, R and Δ T or according to S, I, T h, R and Δ T estimate the thermal conductance value of this electrothermal module.
9. measuring method as claimed in claim 8 is characterized in that providing this equilibrium temperature to the method for this electrothermal module to comprise:
At this cold junction heat insulator is set; And
In this hot junction temp-controlling element is set, regulating and control the temperature in this hot junction, and
According to S, I, T c, R and Δ T or according to S, I, T h, R and Δ T estimate that the method for this thermal conductance value of this electrothermal module comprises:
Calculate (SIT c-I 2R/2)/and the result of Δ T, to obtain this thermal conductance value of this electrothermal module.
10. measuring method as claimed in claim 8 is characterized in that providing this equilibrium temperature to the method for this electrothermal module to comprise:
At this cold junction temp-controlling element is set, to regulate and control the temperature of this cold junction; And
In this hot junction heat insulator is set, and
According to S, I, T c, R and Δ T or according to S, I, T h, R and Δ T estimate that the method for this thermal conductance value of this electrothermal module comprises:
Calculate (SIT h+ I 2R/2)/and the result of Δ T, to obtain this thermal conductance value of this electrothermal module.
11. measuring method as claimed in claim 8, it is characterized in that this electrothermal module comprises first substrate, second substrate and the M thermoelectric pin to being electrically connected to each other, M is positive integer, every a pair ofly should connect this first substrate and this second substrate by the thermoelectricity pin, and this measuring method also comprises:
This thermal conductance of this electrothermal module is on duty with h, divided by A, again divided by 2M, to obtain the heat-conduction coefficient that each should the thermoelectricity pin, wherein A be single should the thermoelectricity pin perpendicular to the sectional area on this direction of current, and h for this thermoelectricity pin at the height that is parallel on this direction of current.
12. measuring method as claimed in claim 1 is characterized in that providing this equilibrium temperature to the method for this electrothermal module to comprise:
At this cold junction heat insulator is set; And
In this hot junction temp-controlling element is set, to regulate and control the temperature in this hot junction.
13. measuring method as claimed in claim 12 is characterized in that this temp-controlling element comprises the cold drawing of the runner with contained fluid, the hot plate with heat-generating units or its combination.
14. measuring method as claimed in claim 1 is characterized in that providing this equilibrium temperature to the method for this electrothermal module to comprise:
At this cold junction temp-controlling element is set, to regulate and control the temperature of this cold junction; And
In this hot junction heat insulator is set.
15. measuring method as claimed in claim 14 is characterized in that this temp-controlling element comprises the cold drawing of the runner with contained fluid, the hot plate with heat-generating units or its combination.
16. measuring method as claimed in claim 1 is characterized in that providing this equilibrium temperature to the method for this electrothermal module to comprise:
On this hot junction and this cold junction, heat insulator is set respectively; And
This electrothermal module and these heat insulators are placed stable environment temperature.
17. measuring method as claimed in claim 16 is characterized in that placing the method for this stable environment temperature to comprise this electrothermal module and these heat insulators:
This electrothermal module and these heat insulators are placed constant temperature oven.
18. measuring method as claimed in claim 1 is characterized in that this electric current is fixed current.
19. a measurement mechanism is characterized in that, in order to measure electrothermal module, this measurement mechanism comprises:
Power-supply unit, to this electrothermal module, so that the two ends of this electrothermal module become respectively hot junction and cold junction, wherein the temperature in this hot junction is greater than the temperature of this cold junction for induced current;
Voltage measurement unit, this time point of each of a plurality of time points within the very first time is measured the terminal voltage of this electrothermal module;
Temperature measurement unit, this time point of each of these time points within this very first time is measured the hot-side temperature in this hot junction and the cold junction temperature of this cold junction; And
Processing unit, according to these measured terminal voltages of these time points in this very first time, these hot-side temperatures and these cold junction temperatures, calculate a plurality of differences of these hot-side temperatures and corresponding these cold junction temperatures, obtaining these terminal voltages with respect to the thermoelectricity of these differences relation, and concern to estimate at least one first parameter value of this electrothermal module according to this thermoelectricity.
20. measurement mechanism as claimed in claim 19 is characterized in that this processing unit does linear regression according to these measured terminal voltages of these time points in this very first time these differences corresponding with these terminal voltages, to obtain thermoelectric relation equation formula.
21. measurement mechanism as claimed in claim 20 is characterized in that this processing unit is with the slope of the straight line of this thermoelectricity relation equation formula representative seat seebeck coefficient as this electrothermal module.
22. measurement mechanism as claimed in claim 21, it is characterized in that this electrothermal module comprises first substrate, second substrate and the M thermoelectric pin to being electrically connected to each other, wherein M is positive integer, every a pair ofly should connect this first substrate and this second substrate by the thermoelectricity pin, and this processing unit with the seat seebeck coefficient of this electrothermal module divided by 2M, to obtain the average seat seebeck coefficient that each should the thermoelectricity pin.
23. measurement mechanism as claimed in claim 20, it is characterized in that this processing unit with the intercept of this thermoelectricity relation equation formula and coordinate axis divided by the size of this electric current after resulting value as the interior resistance value of this electrothermal module, wherein this coordinate axis is zero axle for this difference of this hot-side temperature in this thermoelectricity relation equation formula and this cold junction temperature.
24. measurement mechanism as claimed in claim 23, it is characterized in that this electrothermal module comprises first substrate, second substrate and the M thermoelectric pin to being electrically connected to each other, wherein M is positive integer, every a pair ofly should connect this first substrate and this second substrate by the thermoelectricity pin, and this processing unit should interior resistance value multiply by A with this electrothermal module, divided by h, again divided by 2M, to obtain the resistivity that each should the thermoelectricity pin, wherein A be single should the thermoelectricity pin perpendicular to the sectional area on this direction of current, and h for this thermoelectricity pin at the height that is parallel on this direction of current.
25. measurement mechanism as claimed in claim 19, it is characterized in that this temperature measurement unit is in the second time after this very first time, measure this cold junction temperature of this cold junction or this hot-side temperature in this hot junction, and this processing unit estimates the second parameter value according to this at least one first parameter value and according to this cold junction temperature in this second time or this hot-side temperature.
26. measurement mechanism as claimed in claim 25 is characterized in that this measured in this second time hot-side temperature is respectively Δ T, T with this difference, this cold junction temperature and this hot-side temperature of corresponding this cold junction temperature cAnd T hAnd this electric current is I, this processing unit is done linear regression according to measured these terminal voltages these differences corresponding with these terminal voltages of these very first time points, to obtain thermoelectric relation equation formula, this processing unit is with the slope of the straight line of this thermoelectricity relation equation formula representative seat seebeck coefficient S as this electrothermal module, and with the intercept of this thermoelectricity relation equation formula and coordinate axis divided by the size of this electric current after resulting value as the interior resistance value R of this electrothermal module, wherein this coordinate axis is zero axle for this difference of this hot-side temperature in this thermoelectricity relation equation formula and this cold junction temperature, and this processing unit is according to S, I, T c, R and Δ T or according to S, I, T h, R and Δ T estimate the thermal conductance value of this electrothermal module.
27. measurement mechanism as claimed in claim 26 is characterized in that, also comprises:
Heat insulator is disposed on this cold junction; And
Temp-controlling element is disposed on this hot junction, and to regulate and control the temperature in this hot junction, wherein this processing unit calculates (SIT c-I 2R/2)/and the result of Δ T, to obtain this thermal conductance value of this electrothermal module.
28. measurement mechanism as claimed in claim 26 is characterized in that, also comprises:
Temp-controlling element is disposed on this cold junction, to regulate and control the temperature of this cold junction; And
Heat insulator is disposed on this hot junction, and wherein this processing unit calculates (SIT h+ I 2R/2)/and the result of Δ T, to obtain this thermal conductance value of this electrothermal module.
29. measurement mechanism as claimed in claim 26, it is characterized in that this electrothermal module comprises first substrate, second substrate and the M thermoelectric pin to being electrically connected to each other, M is positive integer, every a pair ofly should connect this first substrate and this second substrate by the thermoelectricity pin, and this processing unit is on duty with h with this thermal conductance of this electrothermal module, divided by A, again divided by 2M, to obtain the heat-conduction coefficient that each should the thermoelectricity pin, wherein A be single should the thermoelectricity pin perpendicular to the sectional area on this direction of current, and h for this thermoelectricity pin at the height that is parallel on this direction of current.
30. measurement mechanism as claimed in claim 19 is characterized in that, also comprises:
Heat insulator is disposed on this cold junction; And
Temp-controlling element is disposed on this hot junction, to regulate and control the temperature in this hot junction.
31. measurement mechanism as claimed in claim 30 is characterized in that this temp-controlling element comprises the cold drawing of the runner with contained fluid, the hot plate with heat-generating units or its combination.
32. measurement mechanism as claimed in claim 19 is characterized in that, also comprises:
Temp-controlling element is disposed on this cold junction, to regulate and control the temperature of this cold junction; And
Heat insulator is disposed on this hot junction.
33. measurement mechanism as claimed in claim 32 is characterized in that this temp-controlling element comprises the cold drawing of the runner with contained fluid, the hot plate with heat-generating units or its combination.
34. measurement mechanism as claimed in claim 19 is characterized in that, also comprises:
Two heat insulators are disposed at respectively on this hot junction and this cold junction.
35. measurement mechanism as claimed in claim 34 is characterized in that, also comprises:
Constant temperature oven, wherein this electrothermal module and these heat insulators are disposed in this constant temperature oven.
36. measurement mechanism as claimed in claim 19 is characterized in that this electric current is fixed current.
37. a computer program is characterized in that, is stored in the computer readable recording medium storing program for performing, to measure electrothermal module, this computer program comprises:
The 1st programmed instruction provides equilibrium temperature to this electrothermal module;
The 2nd programmed instruction applies electric current to this electrothermal module, so that the two ends of this electrothermal module become respectively hot junction and cold junction, wherein the temperature in this hot junction is greater than the temperature of this cold junction;
The 3rd programmed instruction, this time point of each of a plurality of time points within the very first time is measured terminal voltage, the hot-side temperature in this hot junction and the cold junction temperature of this cold junction of this electrothermal module;
The 4th programmed instruction, according to these measured terminal voltages of these time points in this very first time, these hot-side temperatures and these cold junction temperatures, calculate a plurality of differences of these hot-side temperatures and corresponding these cold junction temperatures, to obtain these terminal voltages with respect to the thermoelectricity relation of these differences; And
The 5th programmed instruction concerns to estimate at least one first parameter value of this electrothermal module according to this thermoelectricity.
38. computer program as claimed in claim 37, it is characterized in that the 4th programmed instruction comprises according to these measured terminal voltages of these time points in this very first time these differences corresponding with these terminal voltages does linear regression, to obtain the programmed instruction of thermoelectric relation equation formula.
39. computer program as claimed in claim 38 is characterized in that the 5th programmed instruction comprises:
With the slope of the straight line of this thermoelectricity relation equation formula representative programmed instruction as the seat seebeck coefficient of this electrothermal module.
40. computer program as claimed in claim 39, it is characterized in that this electrothermal module comprises first substrate, second substrate and the M thermoelectric pin to being electrically connected to each other, wherein M is positive integer, every a pair ofly should connect this first substrate and this second substrate by the thermoelectricity pin, this computer program also comprises:
The 6th programmed instruction, with the seat seebeck coefficient of this electrothermal module divided by 2M, to obtain the average seat seebeck coefficient that each should the thermoelectricity pin.
41. computer program as claimed in claim 38 is characterized in that the 5th programmed instruction comprises:
With the intercept of this thermoelectricity relation equation formula and coordinate axis divided by the size of this electric current after resulting value as the programmed instruction of the interior resistance value of this electrothermal module, wherein this coordinate axis is zero axle for this difference of this hot-side temperature in this thermoelectricity relation equation formula and this cold junction temperature.
42. computer program as claimed in claim 41, it is characterized in that this electrothermal module comprises first substrate, second substrate and the M thermoelectric pin to being electrically connected to each other, wherein M is positive integer, every a pair ofly should connect this first substrate and this second substrate by the thermoelectricity pin, this computer program also comprises:
The 7th programmed instruction, the interior resistance value of being somebody's turn to do of this electrothermal module be multiply by A, divided by h, again divided by 2M, to obtain the resistivity that each should the thermoelectricity pin, wherein A be single should the thermoelectricity pin perpendicular to the sectional area on this direction of current, and h for this thermoelectricity pin at the height that is parallel on this direction of current.
43. computer program as claimed in claim 37 is characterized in that, also comprises:
The 8th programmed instruction in the second time after this very first time, is measured this cold junction temperature of this cold junction or this hot-side temperature in this hot junction; And
The 9th programmed instruction estimates the second parameter value according to this at least one first parameter value and according to this cold junction temperature in this second time or this hot-side temperature.
44. computer program as claimed in claim 43 is characterized in that this measured in this second time hot-side temperature is respectively Δ T, T with this difference, this cold junction temperature and this hot-side temperature of corresponding this cold junction temperature cAnd T h, and this electric current is I, and the 4th programmed instruction comprises according to measured these terminal voltages these differences corresponding with these terminal voltages of these very first time points does linear regression, and obtaining the programmed instruction of thermoelectric relation equation formula, and the 5th programmed instruction comprises:
With the slope of the straight line of this thermoelectricity relation equation formula representative programmed instruction as the seat seebeck coefficient S of this electrothermal module; And
With the intercept of this thermoelectricity relation equation formula and coordinate axis divided by the size of this electric current after resulting value as the programmed instruction of the interior resistance value R of this electrothermal module, wherein this coordinate axis is zero axle for this difference of this hot-side temperature in this thermoelectricity relation equation formula and this cold junction temperature; And
The 9th programmed instruction comprises according to S, I, T c, R and Δ T or according to S, I, T h, R and Δ T estimate the programmed instruction of the thermal conductance value of this electrothermal module.
45. computer program as claimed in claim 44, it is characterized in that being provided with heat insulator on this cold junction, and be provided with temp-controlling element on this hot junction, the 1st programmed instruction comprises that this temp-controlling element of order regulates and control the instruction of the temperature in this hot junction, and according to S, I, T c, R and Δ T or according to S, I, T h, R and Δ T estimate that the programmed instruction of the thermal conductance value of this electrothermal module comprises calculating (SIT c-I 2R/2)/and the result of Δ T, with the programmed instruction of this thermal conductance value of obtaining this electrothermal module.
46. computer program as claimed in claim 44, it is characterized in that being provided with temp-controlling element on this cold junction, and be provided with heat insulator on this hot junction, the 1st programmed instruction comprises that this temp-controlling element of order regulates and control the instruction of the temperature of this cold junction, and according to S, I, T c, R and Δ T or according to S, I, T h, R and Δ T estimate that the programmed instruction of the thermal conductance value of this electrothermal module comprises calculating (SIT h+ I 2R/2)/and the result of Δ T, with the programmed instruction of this thermal conductance value of obtaining this electrothermal module.
47. computer program as claimed in claim 44, it is characterized in that this electrothermal module comprises first substrate, second substrate and the M thermoelectric pin to being electrically connected to each other, M is positive integer, every a pair ofly should connect this first substrate and this second substrate by the thermoelectricity pin, this computer program also comprises:
The 10th programmed instruction, this thermal conductance of this electrothermal module is on duty with h, divided by A, again divided by 2M, to obtain the programmed instruction of the heat-conduction coefficient that each should the thermoelectricity pin, wherein A be single should the thermoelectricity pin perpendicular to the sectional area on this direction of current, and h for this thermoelectricity pin at the height that is parallel on this direction of current.
48. computer program as claimed in claim 37 is characterized in that being provided with heat insulator on this cold junction, and is provided with temp-controlling element on this hot junction, and the 1st programmed instruction comprises that this temp-controlling element of order regulates and control the instruction of the temperature in this hot junction.
49. computer program as claimed in claim 37 is characterized in that being provided with temp-controlling element on this cold junction, and is provided with heat insulator on this hot junction, and the 1st programmed instruction comprises that this temp-controlling element of order regulates and control the instruction of the temperature of this cold junction.
50. computer program as claimed in claim 37 is characterized in that respectively being provided with heat insulator on this hot junction and this cold junction, and the 1st programmed instruction comprises that the environment temperature that provides stable is to the instruction of this electrothermal module.
51. computer program as claimed in claim 50, it is characterized in that this electrothermal module and these heat insulators place constant temperature oven, and provide this stable environment temperature to the instruction of this electrothermal module to comprise this constant temperature oven of control, so that this constant temperature oven provides the instruction of this stable environment temperature to this electrothermal module.
52. computer program as claimed in claim 37 is characterized in that this electric current is fixed current.
CN201210447502XA 2012-04-10 2012-11-09 Measurement method, measurement apparatus, and computer program product Pending CN103364432A (en)

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CN105203940A (en) * 2015-09-28 2015-12-30 中国科学院上海硅酸盐研究所 System and method for evaluating reliability of thermoelectric element
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