CN103347362B - A kind of preparation method of pinhole collimator - Google Patents
A kind of preparation method of pinhole collimator Download PDFInfo
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- CN103347362B CN103347362B CN201310297712.XA CN201310297712A CN103347362B CN 103347362 B CN103347362 B CN 103347362B CN 201310297712 A CN201310297712 A CN 201310297712A CN 103347362 B CN103347362 B CN 103347362B
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Abstract
The present invention relates to a kind of preparation method of collimater.For the pin hole shape solving the existence of existing pinhole collimator is undesirable, make the Low energy scattering of heavy ion microbeam serious, cause the heavy ion beam spot of generation excessive, the problems such as application requirement can not be met, the invention provides a kind of preparation method of pinhole collimator, step is as follows: 1) the grinding of blade: adopt accurate sand paper to be ground on blade cutting edge top smooth bright and clean; 2) splicing of narrow slit structure: two panels blade cutting edge is fixed on end liner relatively, leaves slit between cutting edge; 3) assemble: be fixed together stacked for two narrow slit structures, form the pin hole of pinhole collimator.Adopt the pinhole collimator that preparation method of the present invention obtains, the linearity on its blade cutting edge top is good, the slit seam of splicing is wide is less than 1 μm, be conducive to the Low energy scattering composition reducing heavy ion microbeam, the heavy ion beam spot quality better produced, achieves the application in heavy ion microbeam irradiation devices preferably.
Description
Technical field
The present invention relates to a kind of preparation method of collimater, particularly a kind of preparation method of pinhole collimator.
Background technology
Heavy ion microbeam irradiation devices are a kind of is the heavy ion beam spot of millimeter magnitude is restricted to micron level irradiation devices by the method collimating or focus on by the diameter that conventional accelerator produces.As a kind of radiation mode of uniqueness, have a wide range of applications in the research of heavy ion microbeam irradiation in the single particle effect mechanism, radiobiology, materialogy etc. of microelectronic component.From the phase at the beginning of the eighties in last century, countries in the world just start to utilize heavy ion microbeam irradiation to study single particle effect, and are developed rapidly after the nineties.Up to the present, every country having heavy ion avcceleration, almost establishes heavy ion microbeam irradiation devices bar none in the world, and has carried out the research work of the aspects such as single particle effect.Such as, heavy ion microbeam irradiation devices are all had in the University of Melbourne etc. of the Oxford University of the Naval Research Labratory of the U.S., the sub-National Laboratory in the Holy Land, Britain, the Institute for Atomic Research of Japan, the heavy ion research institute of Germany, gondola nuclear physics research institute, Australia, carry out single particle effect research work, and achieve great achievement.
At present, the method that built in the world heavy ion microbeam irradiation devices produce heavy ion microbeam mainly contains two kinds: pin-hole collimation method---and utilize opening size to be that the accelerator line of general diameter several millimeters is restricted to micron order by micron-sized pinhole collimator; Focusing---utilize electromagnetic component that the accelerator beam focusing of general diameter several millimeters is become the heavy ion beam of micron order or submicron order.Due to focusing, to there is equipment investment high, focusing effect is by the restriction of electromagnetic component focusing power, very harsh to the requirement of initial line and equipment, the problems such as line debugging is comparatively difficult, therefore, have equipment investment few, the pin-hole collimation method of heavy ion quality and the advantage such as energy is unrestricted is usually used.
The assembly adopting the heavy ion microbeam irradiation devices most critical of pin-hole collimation method is pinhole collimator, because it directly determines the most key parameter such as the bundle spot size of produced heavy ion microbeam.Existing pinhole collimator mainly adopts spark machined (less than Φ <10 μm) and laser processing (Φ <5 μm) two kinds of processing methods to make, but its pin hole of pinhole collimator adopting these two kinds of processing methods to make is all nonideal cylindrical, but funnel type.As the Φ 1 μm of Newport company, thick 12.5 μm of pinhole collimators adopting laser processing to make, aperture, actual entry is 2.5 μm, and outlet aperture is 1 μm.Because nonideal cylindrical pin hole can make heavy ion produce serious scattering, ream weight ion peak total ratio significantly reduces, and causes there is a large amount of Low energy scattering compositions in heavy ion microbeam, and the heavy ion beam spot of generation is excessive, often be greater than pin hole doubly a lot, often can not meet application requirement.Based on above-mentioned present situation, for meeting ever-increasing application demand, needing badly and existing pinhole collimator is improved.
Summary of the invention
For the pin hole shape solving the existence of existing pinhole collimator is undesirable, make the Low energy scattering of heavy ion microbeam serious, cause the heavy ion beam spot of generation excessive, the problems such as application requirement can not be met, the invention provides a kind of preparation method of pinhole collimator, the method step is as follows:
1) the grinding of blade
First, prepare mould, require that this mould has two faces be plane and intersect vertically, intersection forms straightedge; Blade is fixed in a plane of mould, and makes blade cutting edge top parallel with described straightedge and slightly protrude from this straightedge;
Accurate sand paper is fixed on flat board, then the blade be fixed together and mould are placed on accurate sand paper, make blade vertical with accurate sand paper and blade cutting edge top contacts with accurate sand paper, blade cutting edge top is ground to smooth bright and clean by control mould and accurate sand paper relative motion, and being collimated thing can not be transmitted to require the thickness of cutting edge to ensure;
2) splicing of narrow slit structure
Get the blade that two panels grinds according to step 1), two panels blade to be placed in same plane and cutting edge is relative, leave slit between cutting edge and form narrow slit structure; Then narrow slit structure is fixed on the end liner with opening, and makes partial slits be positioned at the opening part of end liner and not be blocked, obtain the overall structure formed by end liner and narrow slit structure;
3) assemble
Get two according to step 2) overall structure formed by end liner and narrow slit structure that obtains, they are stackedly fixed together, require that the opening of two end liners correspondence forms common opening together, and make the slit of two narrow slit structures in common opening, intersect to form the pin hole of pinhole collimator.
Described blade is preferably stainless steel blade.
It is preferred that described blade cutting edge top protrudes from straightedge 200-300 μm.
Described flat board is preferably glass plate.
In the final stage of grinding blade cutting edge top with accurate sand paper, the accurate sandpaper abrasive granularity adopted is preferably more than 10000 orders.
The blade that the described two panels cutting edge be placed in same plane is relative is preferably and is blocked as two panels is to obtain by a slice blade.
The blade that the described two panels cutting edge be placed in same plane is relative, its front is placed as preferably in the same way.
The splicing of narrow slit structure is preferably carried out under an optical microscope, and the transmitted light of light microscope adopts laser, and the image illumination of light microscope gathers lower than the CCD of 0.0001Lux, and passes through Real time vision.
Adopt the pinhole collimator that preparation method of the present invention obtains, the linearity on its blade cutting edge top is good, surface roughness Ra mean value can be low to moderate 5nm, the slit seam of splicing is wide is less than 1 μm, be conducive to the Low energy scattering composition reducing heavy ion microbeam, and the relative blade of two panels cutting edge blocks the Low energy scattering that the mode of acquisition and front placing in the same way reduce further heavy ion microbeam, the heavy ion beam spot quality better of generation, heavy ion beam spot area about 2 μm by a slice blade
2, the peak total ratio of heavy ion microbeam power spectrum is greater than 95%, is about the peak total ratio of 50%, achieves the application in heavy ion microbeam irradiation devices preferably apparently higher than the heavy ion microbeam power spectrum obtained by existing pinhole collimator.In addition, the pinhole collimator obtained by preparation method of the present invention can also be applied as the collimater of other radiation or particle etc.
Accompanying drawing explanation
Fig. 1 pinhole collimator STRUCTURE DECOMPOSITION of the present invention schematic diagram;
The blade structure schematic diagram of Fig. 2 pinhole collimator of the present invention.
Embodiment
Below in conjunction with specific embodiment, embodiments of the present invention are described further.
Embodiment
A preparation method for pinhole collimator, its step is as follows:
1) the grinding of blade
First, prepare mould, require that this mould has two faces be plane and intersect vertically, intersection forms straightedge; Blade is fixed in a plane of mould, and makes blade cutting edge top parallel with described straightedge and slightly protrude from this straightedge;
Accurate sand paper is fixed on flat board, then the blade be fixed together and mould are placed on accurate sand paper, make blade vertical with accurate sand paper and blade cutting edge top contacts with accurate sand paper, blade cutting edge top is ground to smooth bright and clean by control mould and accurate sand paper relative motion, and being collimated thing can not be transmitted to require the thickness of cutting edge to ensure;
2) splicing of narrow slit structure
Get the blade that two panels grinds according to step 1), two panels blade to be placed in same plane and cutting edge is relative, leave slit between cutting edge and form narrow slit structure; Then narrow slit structure is fixed on the end liner with opening, and makes partial slits be positioned at the opening part of end liner and not be blocked, obtain the overall structure formed by end liner and narrow slit structure;
3) assemble
Get two according to step 2) overall structure formed by end liner and narrow slit structure that obtains, they are stackedly fixed together, require that the opening of two end liners correspondence forms common opening together, and make the slit of two narrow slit structures in common opening, intersect to form the pin hole of pinhole collimator.
Described blade is stainless steel blade; Described blade cutting edge top protrudes from straightedge 200-300 μm; Described flat board is glass plate; In the final stage of grinding blade cutting edge top with accurate sand paper, the accurate sandpaper abrasive granularity adopted is more than 10000 orders; The blade that the described two panels cutting edge be placed in same plane is relative is blocked as two panels is to obtain by a slice blade, and its front is placed in the same way; The splicing of narrow slit structure is carried out under an optical microscope, and the transmitted light of light microscope adopts laser, and the image illumination of light microscope gathers lower than the CCD of 0.0001Lux, and passes through Real time vision.
checking at bundle of pinhole collimator prepared by the present invention:
1. peak total ratio
The pinhole collimator adopting the present invention to prepare is 48MeV's to the energy produced by accelerator
32s ion beam current collimates, and measures after collimation with Au Si surface barrier detector
32s ion microbeam power spectrum, result shows:
32the peak total ratio of S ion microbeam power spectrum is 95.2%, illustrates after collimation
32the Low energy scattering composition of S ion microbeam is few, and quality of beam is good.
2. heavy ion microbeam bundle spot area
The pinhole collimator adopting the present invention to prepare is 48MeV's to the energy produced by accelerator
32s ion beam current collimates, with after collimating
32s ion micro irradiation plastic track detector, after carrying out chemical etching process to plastic track detector, find bundle spot with ESEM and observe the distribution situation noting down bundle spot, result shows:
32the linear-scale of S ion microbeam bundle spot is 1.5 μm × 1.5 μm, and Low energy scattering composition accounts for 5% greatly, describes equally after collimation
32the Low energy scattering composition of S ion microbeam is few, and quality of beam is good.
application in the single particle effect study mechanism of microelectronic component
The pinhole collimator (linear-scale of pin hole is 2 μm × 3 μm) adopting the present invention to prepare is 145MeV's to the energy produced by accelerator
79br ion beam current collimates, with collimation after
79br ion microbeam carries out point by point scanning irradiation to static random access memory (SRAM) sample writing data in advance, by measuring the relation (i.e. SEU imaging technique) between single-particle inversion (SEU) and incident beam position, determine position and the area of the SEU sensitizing range of this Memory Storage Unit inside.
Result shows: the sensitizing range of static random access memory (SRAM) sample generation single-particle inversion is NMOS and the PMOS district under reverse-biased cut-off state, measurement result accuracy is good, consistent with AUTHORITATIVE DATA, illustrate that pinhole collimator prepared by the present invention is applicable to the single particle effect study mechanism of microelectronic component completely.
Claims (7)
1. a preparation method for pinhole collimator, is characterized in that step is as follows:
1) the grinding of blade
First, prepare mould, require that this mould has two faces be plane and intersect vertically, intersection forms straightedge; Blade is fixed in a plane of mould, and makes blade cutting edge top parallel with described straightedge and slightly protrude from this straightedge;
Accurate sand paper is fixed on flat board, then the blade be fixed together and mould are placed on accurate sand paper, make blade vertical with accurate sand paper and blade cutting edge top contacts with accurate sand paper, blade cutting edge top is ground to smooth bright and clean by control mould and accurate sand paper relative motion, and being collimated thing can not be transmitted to require the thickness of cutting edge to ensure;
2) splicing of narrow slit structure
Get two panels according to step 1) blade that grinds, two panels blade to be placed in same plane and cutting edge is relative, to leave slit between cutting edge and form narrow slit structure; Then narrow slit structure is fixed on the end liner with opening, and makes partial slits be positioned at the opening part of end liner and not be blocked, obtain the overall structure formed by end liner and narrow slit structure;
3) assemble
Get two according to step 2) overall structure formed by end liner and narrow slit structure that obtains, they are stackedly fixed together, require that the opening of two end liners correspondence forms common opening together, and make the slit of two narrow slit structures in common opening, intersect to form the pin hole of pinhole collimator.
2. the preparation method of pinhole collimator as claimed in claim 1, is characterized in that: described blade is stainless steel blade.
3. the preparation method of pinhole collimator as claimed in claim 1, is characterized in that: described blade cutting edge top protrudes from straightedge 200-300 μm.
4. the preparation method of pinhole collimator as claimed in claim 1, is characterized in that: described flat board is glass plate.
5. the preparation method of pinhole collimator as claimed in claim 1, it is characterized in that: in the final stage of grinding blade cutting edge top with accurate sand paper, the accurate sandpaper abrasive granularity adopted is more than 10000 orders.
6. the preparation method of pinhole collimator as claimed in claim 1, is characterized in that: described in be placed in the relative blade of two panels cutting edge in same plane for being blocked by a slice blade as two panels is to obtain.
7. the preparation method of pinhole collimator as claimed in claim 1, it is characterized in that: the splicing of narrow slit structure is carried out under an optical microscope, the transmitted light of light microscope adopts laser, the image illumination of light microscope gathers lower than the CCD of 0.0001Lux, and passes through Real time vision.
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| CN103698896B (en) * | 2013-12-26 | 2016-01-27 | 中国科学院苏州生物医学工程技术研究所 | A kind of precise pinhole aims at debug system and method |
| CN103902760B (en) * | 2014-03-05 | 2017-02-08 | 中国原子能科学研究院 | TGS collimator and design method thereof |
| CN104942652B (en) * | 2015-06-28 | 2018-06-01 | 长春理工大学 | Laser diffraction examines knife system and method to knife online |
| CN112816398B (en) * | 2020-12-30 | 2023-07-25 | 中国科学院近代物理研究所 | Plant microbeam irradiation experiment collimator and automatic sample changing device |
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| CN2350758Y (en) * | 1999-01-07 | 1999-11-24 | 中国科学院高能物理研究所 | Synchronous radiation bunch slit device |
| CN101329923A (en) * | 2007-06-21 | 2008-12-24 | 同方威视技术股份有限公司 | Dual-purpose collimating device with seam |
| CN103106940A (en) * | 2011-11-14 | 2013-05-15 | 中国原子能科学研究院 | Neutron collimation system of high-voltage doubler |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7579600B2 (en) * | 2006-06-30 | 2009-08-25 | Siemens Medical Solutions Usa, Inc. | Preclinical SPECT system using multi-pinhole collimation |
| US7612343B2 (en) * | 2006-10-16 | 2009-11-03 | Gvi Medical Devices | Collimator for radiation detectors and method of use |
| US7822181B2 (en) * | 2008-07-29 | 2010-10-26 | Horia Mihail Teodorescu | Radiation collimator |
| DK2510521T3 (en) * | 2009-12-09 | 2017-06-06 | Molecubes | PROCEDURES AND SYSTEMS FOR COLLIMATION |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2350758Y (en) * | 1999-01-07 | 1999-11-24 | 中国科学院高能物理研究所 | Synchronous radiation bunch slit device |
| CN101329923A (en) * | 2007-06-21 | 2008-12-24 | 同方威视技术股份有限公司 | Dual-purpose collimating device with seam |
| CN103106940A (en) * | 2011-11-14 | 2013-05-15 | 中国原子能科学研究院 | Neutron collimation system of high-voltage doubler |
Non-Patent Citations (1)
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| SPECT准直器几何及图像重建算法的进展;尤江生等;《核电子学与探测技术》;19970531;第17卷(第3期);第221-214页 * |
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