CN103346477A - External cavity laser with lateral coupling planar waveguide grating - Google Patents
External cavity laser with lateral coupling planar waveguide grating Download PDFInfo
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- CN103346477A CN103346477A CN2013102682335A CN201310268233A CN103346477A CN 103346477 A CN103346477 A CN 103346477A CN 2013102682335 A CN2013102682335 A CN 2013102682335A CN 201310268233 A CN201310268233 A CN 201310268233A CN 103346477 A CN103346477 A CN 103346477A
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Abstract
The invention discloses an external cavity laser with a lateral coupling planar waveguide grating. The external cavity laser comprises a planar optical waveguide chip, wherein the chip comprises a tube core and a waveguide, the waveguide is provided with a core layer which is of a ridge shape, and the two sides of the core layer of the waveguide are provided with the lateral coupling grating. The tube core comprises an active area, a front cavity surface and a back cavity surface, wherein the back cavity surface is used for reflecting optical waves excited in the active area, the front cavity surface is used for transmitting the optical waves into the waveguide, and the core layer of the waveguide is coupled into the front cavity surface of the tube core. According to the external cavity laser with the lateral coupling planar waveguide grating, the passive multistage lateral coupling planar waveguide grating is adopted to serve as an external cavity of the laser, difficulty in a process can be lowered, and cost is reduced.
Description
Technical field
The present invention relates to a kind of outside cavity gas laser, particularly relate to a kind of exocoel narrow linewidth laser that adopts the side-coupled grating of passive planar waveguide.
Background technology
Er-doped fiber super-fluorescence light source (ED-SFS) has excellent properties such as wavelength stability is good, power output is high, wide spectrum, no polarized radiation, life-span length, having become the perfect light source of high-precision optical fiber gyro, is the important leverage that realizes that inertial navigation level and micron order optic fiber gyroscope are used.In addition, erbium-doped fiber amplifier (EDFA) has high-gain, high Output optical power, wide spectrum frequency range is not subjected to characteristics such as optical signal property and modulation speed influence, compared with the conventional regeneration device, erbium-doped fiber amplifier only needs to change terminal equipment, therefore advantages such as it is easy to have system upgrade, cheap are widely used in fiber optic communication field.Desirable pumping source as ED-SFS and EDFA, the 980nm semiconductor laser has many advantages, low as threshold current density, differential quantum efficency is high, little to temperature sensitivity, have higher pumping efficiency and noise factor low etc. to the erbium fibre, therefore be subjected to extensive concern.
Mainly contain two kinds of methods at present and construct narrow linewidth semiconductor laser: a kind of is the monolithic semiconductor device, as DFB and DBR laser, and complex process, output wavelength can not accurately be controlled, and temperature stability is relatively poor; Another kind is outside cavity gas laser, the main fiber-optical grating external cavity technology that adopts improves the stability of device centre wavelength, but can't realize accurately temperature control, and centre wavelength is bigger with the coefficient of deviation of temperature, and manufacture difficulty is bigger, is not suitable for single chip and other function element are integrated.
Summary of the invention
(1) technical problem that will solve
The problem to be solved in the present invention is to propose a kind of side-coupled waveguide grating outside cavity gas laser, to solve the shortcoming of conventional semiconductor laser process complexity, temperature stability difference.
(2) technical scheme
The present invention proposes a kind of outside cavity gas laser, and it comprises a planar optical waveguide chip, and this chip comprises a tube core and a waveguide, and described waveguide has a sandwich layer, and this sandwich layer is ridged, has a side-coupled grating in the sandwich layer both sides of described waveguide.
According to one embodiment of the present invention, described tube core includes source region, front facet and rear facet, described rear facet is used for the light wave that the described active area of reflection excites, and described front facet is used for this light wave of transmission to described waveguide, and the sandwich layer of described waveguide is coupled to the front facet of this tube core.
According to one embodiment of the present invention, described tube core also comprises the mode spot-size mapped structure, and the width of this mode spot-size mapped structure narrows down to front facet gradually from active area, forms trapezium structure.
According to one embodiment of the present invention, described side-coupled grating is Bragg grating.
According to one embodiment of the present invention, the groove etched degree of depth of the grating of described side-coupled grating is identical with the etching depth of the sandwich layer of described waveguide.
According to one embodiment of the present invention, the direction of propagation of described waveguide is 5 °～10 ° with respect to the angle perpendicular to the direction of the front facet of described tube core.
According to one embodiment of the present invention, described side-coupled grating is positioned at the front facet 1mm～10mm place of the described tube core of distance in the waveguide.
According to one embodiment of the present invention, the center ridge duct width of described side-coupled grating 2.3 is 2～8 μ m, and side direction etching width is 0.5～2 μ m, and the optical grating reflection rate is 10～60%.
According to one embodiment of the present invention, that described outside cavity gas laser also comprises is heat sink, radiator and thermistor, described planar optical waveguide chips welding is on heat sink, and this is heat sink to be welded on the radiator, and this radiator and thermistor electrically connect forms temperature-controlling system.
According to one embodiment of the present invention, described outside cavity gas laser also comprises optical fiber, and this fiber core layer is aimed at coupling with the sandwich layer of described waveguide, and the groove that described planar optical waveguide chip end has anisotropic etching is used for receiving optical fiber.
(3) beneficial effect
Side-coupled waveguide grating outside cavity gas laser of the present invention adopts passive multistage side-coupled waveguide grating as laser external cavity, can simplify technology difficulty, reduces cost.And laser tube core of the present invention is integrated in silicon dioxide (SiO
2) on the planar optical waveguide, and be connected to together on heat sink and the refrigerator, can accurately control temperature, improve device temperature stability.
Description of drawings
Fig. 1 is the structural representation of the outside cavity gas laser of one embodiment of the present of invention;
Fig. 2 A is the internal structure vertical view of the planar optical waveguide chip of one embodiment of the present of invention;
Fig. 2 B is the cross sectional representation of the planar optical waveguide chip of an example of the present invention;
Fig. 3 A is the ridge waveguide end view of one embodiment of the present of invention;
Fig. 3 B is the side-coupled waveguide grating perspective schematic view of one embodiment of the present of invention;
Fig. 3 C is the side-coupled waveguide grating vertical view of one embodiment of the present of invention;
Fig. 4 is that the terminal anisotropic etching of the planar optical waveguide chip of one embodiment of the present of invention is fallen the end view of dovetail groove.
Embodiment
The present invention proposes a kind of outside cavity gas laser, adopts the side-coupled grating of slab guide as laser external cavity, by optimizing external cavity length and optical grating reflection rate, can reduce laser linewidth effectively, improves side mode suppression ratio.Specifically, outside cavity gas laser of the present invention comprises a planar optical waveguide chip, and this chip comprises a tube core and a waveguide, has a side-coupled grating in waveguide.Described tube core includes source region, front facet and rear facet, active area is used for providing optical gain medium with excitation light wave, rear facet is used for the light wave that this tube core active area of reflection excites, front facet is used for light wave that this tube core active area of transmission excites to waveguide, described waveguide has a sandwich layer, this sandwich layer is ridged, and with the coupling of the front facet of this tube core.
The ridged of doing refers to from the flat board to the three-dimensional shape that is protruded with a bar shaped fin.Preferably, the groove etched degree of depth of grating is identical with the etching depth of ridge waveguide sandwich layer, and the bar shaped fin that etching depth is ridged protrudes dull and stereotyped height.Can a photoetching realize wave-guide grating structure thus, simplify process complexity.
Described side-coupled grating is the Bragg grating in the both sides of ridge sandwich layer etching, and aims at coupling by the waveguide front facet with the tube core front facet.As seen, side-coupled grating provides the narrowband reflection window.
Preferably, described planar optical waveguide chips welding is on heat sink, thermistor of close planar optical waveguide chip place welding on heat sink, this is heat sink to be preferably and to be welded on the radiator, and this radiator electrically connects (for example using spun gold) composition temperature-controlling system with thermistor.Thus, the present invention can accurately control the laser works temperature, improves the stability of laser centre wavelength.
Preferably, described side-coupled grating is positioned in the waveguide front facet 1mm～10mm place apart from tube core, and thus, the chamber of the resonant cavity that tube core rear facet and side-coupled grating are formed is long shorter, can reduce side mode suppression ratio effectively, and reduces loss.
Preferably, the direction of propagation of described waveguide is 5 °～10 ° with respect to the angle perpendicular to the direction of the front facet of described tube core, to reduce Waveguide end face to the back reflection loss of transmission light wave, improves the coupling efficiency of tube core and Waveguide end face.
Preferably, the center ridge duct width of side-coupled grating is 2～8 μ m, and side direction etching width is 0.5～2 μ m, and the optical grating reflection rate is 10～60%.
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Fig. 1 is the structural representation of the outside cavity gas laser of one embodiment of the present of invention, and this figure is end view.See also shown in Figure 1ly, this embodiment is a side-coupled waveguide grating outside cavity gas laser of 980nm, and it comprises shell 1, planar optical waveguide chip 2, optical fiber 3, fiber fixed seat 4, first heat sink 5, second heat sink 6, refrigerator 7 and thermistor 8.Described planar optical waveguide chip 2 is welded on first heat sink 5, and thermistor 8 is arranged in a side (figure is the left side) of planar optical waveguide chip 2, also is welded on first heat sink 5; First heat sink 5 is welded on again on second heat sink 6, and second heat sink 6 is welded on again on the refrigerator 7, and described refrigerator 7 is fixed in the shell 1.Optical fiber 3 is fixed on second heat sink 6 by fiber fixed seat 4.
Described shell 1 is used for encapsulated laser, and it is all-metal air-tightness packaging, can be made by the tungsten-copper alloy material, and the surface plating is coated with nickel-gold layer.
Planar optical waveguide chip 2 is positioned at first heat sink 5 opposite side (with respect to the opposite side of thermistor, being the right side among the figure), is used to form laserresonator and output light-wave; The groove that these planar optical waveguide chip 2 ends have anisotropic etching is used for receiving optical fiber 3.The cross section of this groove for example is down trapezoidal or V-arrangement, is example to fall trapezoidal flute among this embodiment.
Described fiber fixed seat 4 is used for fixed fiber 3, and it is positioned on second heat sink 6, can be made by the kovar alloy material, and be a metal sleeve in this embodiment.
Described first heat sink 5 is used for the heat that transition conductive plane chip of light waveguide 2 produces, and avoids because the heat sink and inconsistent chip problem on deformation that causes of chip material thermal coefficient of expansion can adopt thermal coefficient of expansion and chip near material.In this embodiment, it is made by A1N.
Described second heat sink 6 is used for the heat of conduction first heat sink 5 transmission, can adopt the bigger material of the coefficient of heat conduction, and in this embodiment, it is made by nickel.
Described refrigerator 7 is used for regulating refrigerating capacity, the working temperature of accurate control plane chip of light waveguide 2, and it can be the semiconductor thermoelectric refrigeration device.
Described thermistor 8 is used for the temperature of induction planes chip of light waveguide 2, is positioned at first heat sink 5 left sides, near planar optical waveguide chip 2.Thermistor 8 is as temperature detection and the input block of temperature compensation system, and this temperature compensation system comprises thermistor 8 and cooling device.Cooling device comprises and is installed in SiO
2AlN first below the planar optical waveguide chip 2 is heat sink 5, and nickel second is heat sink 6, and refrigerator 7 etc. are used for the working temperature of accurate control plane chip of light waveguide 2.
Fig. 2 A is the internal structure vertical view of the planar optical waveguide chip of one embodiment of the present of invention, sees also shown in Fig. 2 A, and this planar optical waveguide chip 2 comprises tube core 2.1, waveguide 2.2, side-coupled grating 2.3.
Described tube core 2.1 is used for optical gain medium is provided, and has a front facet and a rear facet, and front facet is used for light wave that this tube core active area of transmission excites to waveguide, and rear facet is used for the light wave that this tube core active area of reflection excites.Wherein front facet 2.1A plates anti-reflection film, and reflectivity forms optical resonator less than 1% with rear facet before suppressing laser tube core, improves the coupling efficiency of laser tube core 2.1 and waveguide 2.2; 980nm laser tube core rear facet 2.1B plates high-reflecting film, and reflectivity is greater than 99%, and this chamber face and side-coupled grating 2.3 form resonant cavity.
Wherein said tube core 2.1 includes source region 2.11 and mode spot-size mapped structure 2.12, wherein, active area 2.11 is used for providing optical gain medium, mode spot-size mapped structure 2.12 is used for reducing the mode spot-size of active area 2.11 excitation light waves, to improve the coupling efficiency of tube core and waveguide, it is positioned at active area 2.11 ends, and material is identical with active area, the width of this mode spot-size mapped structure narrows down to front facet gradually from active area, forms trapezium structure.
Described waveguide 2.2 is ridge waveguides, that is to say, it is ridged that its sandwich layer in waveguide forms cross section, forms the waveguide of real refractive index waveguide in the direction that is parallel to waveguide core layer.Do ridged shown in the Reference numeral 2.23 of Fig. 3 A and 3B, refer to from the flat board to the three-dimensional shape that is protruded with a bar shaped fin.The direction of propagation of the waveguide 2.2 of this ridge structure is 5 °～10 ° with respect to the α angle perpendicular to the direction of described tube core 2.1 front facet 2.1A, to reduce Waveguide end face to the back reflection loss of transmission light wave, improves the coupling efficiency of tube core and Waveguide end face.This waveguide 2.2 can be by SiO
2, optical waveguide material such as polymer forms, and preferably adopts SiO in this embodiment
2Material.
Described side-coupled grating 2.3 is positioned in the waveguide 2.2 1mm～10mm the place apart from tube core 2.1 front facet 2.1A.Thus, the chamber of the resonant cavity that tube core rear facet and side-coupled grating are formed is long shorter, can reduce side mode suppression ratio effectively, and reduces loss.
Described optical fiber 3 is used for the light wave of output plane chip of light waveguide 2 transmission, is arranged in the trapezoidal groove that falls of planar optical waveguide chip 2 terminal anisotropic etchings, in order to make sandwich layer 2.23 passive alignings of fiber core layer and waveguide 2.2.
Fig. 2 B is the cross sectional representation of the planar optical waveguide chip of the above embodiment of the present invention, see also shown in Fig. 2 B, tube core 2.1 flip chip bondings are connected on the Si substrate 2.21, this Si substrate comes out by etching waveguide 2.2 left sides, can make the mode spot-size mapped structure 2.12 of tube core 2.1 aim at coupling with the sandwich layer 2.23 of waveguide 2.2 by the control etching depth.
Fig. 3 A is the ridge waveguide end view of the planar optical waveguide chip of above-described embodiment, and Fig. 3 B is the side-coupled waveguide grating perspective schematic view of above-described embodiment.See also shown in Fig. 3 A, described waveguide 2.2 in this embodiment comprises in vertical direction:
Si substrate 2.21, thickness are 300～500 μ m;
SiO in 2.21 formation of Si substrate
2Following coating layer 2.22, thickness are 10～20 μ m;
SiO
2Sandwich layer 2.23 is grown in down on the coating layer 2.22, and coating layer 2.22 is big under the refractive index ratio, and refringence is 0.1～2%, and the sandwich layer cross section adopts the ridge structure, forms real refractive index waveguide in the direction that is parallel to waveguide core layer, and light wave is limited in the sandwich layer;
SiO
2Last coating layer 2.24 is grown on the sandwich layer 2.23, and thickness is 10～20 μ m, and its refractive index is identical with following coating layer 2.22.
SiO wherein
2Upper and lower coating layer and sandwich layer can utilize plasma reinforced chemical vapour deposition (PECVD) or flame hydrolysis deposition methods such as (FHD) to grow.
See also shown in Fig. 3 B, wherein side-coupled grating 2.3 gratings are formed on waveguide 2.2 both sides, and etching depth H is identical with the etching depth (outstanding dull and stereotyped height) of ridge waveguide 2.2, is about 1～3 μ m, can realize by a chemical wet etching technology;
See also shown in Fig. 3 C, wherein near the light wave reflectivity of 2.3 pairs of wavelength of side-coupled grating bragg wavelength is the highest, and the narrowband reflection window can be provided, and forms resonant cavity with 980nm laser tube core rear facet 2.1B.
The center ridge duct width of side-coupled grating 2.3 is 2～8 μ m, and side direction etching width is 0.5～2 μ m, and the optical grating reflection rate is 10～60%.Adopt the Pyatyi grating among this embodiment, centre wavelength is near 974nm, and grating cycle ∧ is about 1.7 μ m, and duty ratio is 50%, and the wide T of side-coupled grating etching bar is about 0.85 μ m, and grating length L is 1～5mm, can adopt conventional chemical wet etching technology to realize.After the grating etching was finished, the grating groove was used the SiO that coating layer uses
2Material is filled, then the thicker last coating layer of continued growth.
See also shown in Figure 4ly, the dovetail groove that falls of anisotropic etching is positioned at waveguide 2.2 ends in this embodiment, and trench bottom etches into Si substrate 2.21 surfaces, is used for fixed fiber 3, in order to make fiber core layer aim at coupling with the sandwich layer 2.23 of waveguide 2.2.
The above embodiment of the present invention is at SiO
2The planar optical waveguide glazing is carved with multistage side-coupled Bragg grating, can reduce process complexity.
Tube core rear facet and side-coupled grating integrated on the above embodiment of the present invention midplane chip of light waveguide are formed external-cavity semiconductor laser, and this planar optical waveguide chip is connected with thermistor.Thermistor and heat sink, refrigerator composition temperature compensation system, with the working temperature of accurate control plane chip of light waveguide, thus the side-coupled waveguide grating outside cavity gas laser of 980nm of realization single-mode oscillation, high side mode suppression ratio, narrow linewidth, high-temperature stability.
Want in sum, the present invention has following technique effect:
1. the present invention adopts SiO
2The side-coupled grating of slab guide by optimizing external cavity length and optical grating reflection rate, can reduce laser linewidth as laser external cavity effectively, improves side mode suppression ratio.
2. the present invention is integrated into SiO with tube core
2On the planar optical waveguide chip, and be welded on planar waveguide chip heat sink and refrigerator on, the accurate working temperature of control plane waveguide chip has improved the stability of laser centre wavelength.
3. SiO of the present invention
2Planar optical waveguide adopts the ridge waveguide structure, compare with rectangular waveguide, this structure has bigger cross section, allow bigger manufacture craft tolerance, and light field is lower in ridge waveguide both sides intensity, side-coupled grating can reduce the light wave scattering loss, and then reduces the light wave transmissions loss, obtains more stable performance.
4. ridge waveguide both sides photoetching of the present invention has side-coupled grating, and this grating provides the narrowband reflection window, and the groove etched degree of depth of grating is identical with the ridge waveguide etching depth, can a photoetching realize wave-guide grating structure, has reduced process complexity.
5. the present invention adopts multistage side-coupled grating, can use conventional photoetching process to realize, is conducive to technology controlling and process, reduces cost.
6. the ridge waveguide structure of the present invention's proposition tilts 5 °～10 ° with respect to vertical die chamber face direction, is conducive to improve the coupling efficiency of tube core and planar optical waveguide, and reduces the planar optical waveguide end face to the reflectivity of transmission light wave.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; be understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an outside cavity gas laser comprises a planar optical waveguide chip, and this chip comprises a tube core and a waveguide, it is characterized in that: described waveguide has a sandwich layer, and this sandwich layer is ridged, has a side-coupled grating in the sandwich layer both sides of described waveguide.
2. outside cavity gas laser as claimed in claim 1, it is characterized in that: described tube core includes source region, front facet and rear facet, described rear facet is used for the light wave that the described active area of reflection excites, described front facet is used for this light wave of transmission to described waveguide, and the sandwich layer of described waveguide is coupled to the front facet of this tube core.
3. outside cavity gas laser as claimed in claim 2, it is characterized in that: described tube core also comprises the mode spot-size mapped structure, the width of this mode spot-size mapped structure narrows down to front facet gradually from active area, forms trapezium structure.
4. as each described outside cavity gas laser in the claim 1 to 3, it is characterized in that: described side-coupled grating is Bragg grating.
5. as each described outside cavity gas laser in the claim 1 to 3, it is characterized in that: the groove etched degree of depth of the grating of described side-coupled grating is identical with the etching depth of the sandwich layer of described waveguide.
6. as each described outside cavity gas laser in the claim 1 to 3, it is characterized in that: the direction of propagation of described waveguide is 5 °～10 ° with respect to the angle perpendicular to the direction of the front facet of described tube core.
7. as each described outside cavity gas laser in the claim 1 to 3, it is characterized in that: described side-coupled grating is positioned at the front facet 1mm～10mm place of the described tube core of distance in the waveguide.
8. as each described outside cavity gas laser in the claim 1 to 3, it is characterized in that: the center ridge duct width of described side-coupled grating 2.3 is 2～8 μ m, and side direction etching width is 0.5～2 μ m, and the optical grating reflection rate is 10～60%.
9. as each described outside cavity gas laser in the claim 1 to 3, it is characterized in that: described outside cavity gas laser also comprises heat sink, radiator and thermistor, described planar optical waveguide chips welding is on heat sink, this is heat sink to be welded on the radiator, and this radiator and thermistor electrically connect forms temperature-controlling system.
10. as each described outside cavity gas laser in the claim 1 to 3, it is characterized in that: described outside cavity gas laser also comprises optical fiber, this fiber core layer is aimed at coupling with the sandwich layer of described waveguide, and the groove that described planar optical waveguide chip end has anisotropic etching is used for receiving optical fiber.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811985A (en) * | 2014-03-05 | 2014-05-21 | 中国科学院半导体研究所 | Miniature ErYb co-doped superfluorescent optical fiber light source |
| CN106129809A (en) * | 2016-08-25 | 2016-11-16 | 武汉华工正源光子技术有限公司 | Electroabsorption modulator and side-coupled grating laser method for integrating monolithic and device |
| CN106159672A (en) * | 2016-08-30 | 2016-11-23 | 中国科学院半导体研究所 | Based on the narrow line wide cavity laser structure that optical fiber lens and grating are integrated |
| CN107104362A (en) * | 2016-02-23 | 2017-08-29 | 普里马电子股份公司 | Semiconductor laser diode and its manufacture method |
| CN108270147A (en) * | 2016-12-30 | 2018-07-10 | 华为技术有限公司 | A kind of laser aid and its light extraction method |
| CN109412015A (en) * | 2018-11-23 | 2019-03-01 | 中国科学院半导体研究所 | Single spatial mode low divergence narrow linewidth composite photonic crystal laser |
| CN112782803A (en) * | 2021-01-08 | 2021-05-11 | 联合微电子中心有限责任公司 | Method for improving robustness of silicon-based optical waveguide process |
| CN112787211A (en) * | 2021-01-22 | 2021-05-11 | 珠海奇芯光电科技有限公司 | TO packaging structure and optical assembly of integrated PLC chip |
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| CN1396685A (en) * | 2001-07-05 | 2003-02-12 | 朗迅科技公司 | Adjustable wavelength laser |
| CN1658453A (en) * | 2004-02-18 | 2005-08-24 | 中国科学院半导体研究所 | Hybrid integrated tunable semiconductor laser |
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| CN1396685A (en) * | 2001-07-05 | 2003-02-12 | 朗迅科技公司 | Adjustable wavelength laser |
| CN1658453A (en) * | 2004-02-18 | 2005-08-24 | 中国科学院半导体研究所 | Hybrid integrated tunable semiconductor laser |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811985A (en) * | 2014-03-05 | 2014-05-21 | 中国科学院半导体研究所 | Miniature ErYb co-doped superfluorescent optical fiber light source |
| CN103811985B (en) * | 2014-03-05 | 2017-01-18 | 中国科学院半导体研究所 | Miniature ErYb co-doped superfluorescent optical fiber light source |
| CN107104362A (en) * | 2016-02-23 | 2017-08-29 | 普里马电子股份公司 | Semiconductor laser diode and its manufacture method |
| CN106129809A (en) * | 2016-08-25 | 2016-11-16 | 武汉华工正源光子技术有限公司 | Electroabsorption modulator and side-coupled grating laser method for integrating monolithic and device |
| CN106129809B (en) * | 2016-08-25 | 2019-08-09 | 武汉华工正源光子技术有限公司 | Electroabsorption modulator and side-coupled grating laser method for integrating monolithic and device |
| CN106159672A (en) * | 2016-08-30 | 2016-11-23 | 中国科学院半导体研究所 | Based on the narrow line wide cavity laser structure that optical fiber lens and grating are integrated |
| CN108270147A (en) * | 2016-12-30 | 2018-07-10 | 华为技术有限公司 | A kind of laser aid and its light extraction method |
| CN108270147B (en) * | 2016-12-30 | 2019-08-20 | 华为技术有限公司 | A kind of laser aid and its out light method |
| CN109412015A (en) * | 2018-11-23 | 2019-03-01 | 中国科学院半导体研究所 | Single spatial mode low divergence narrow linewidth composite photonic crystal laser |
| CN112782803A (en) * | 2021-01-08 | 2021-05-11 | 联合微电子中心有限责任公司 | Method for improving robustness of silicon-based optical waveguide process |
| CN112787211A (en) * | 2021-01-22 | 2021-05-11 | 珠海奇芯光电科技有限公司 | TO packaging structure and optical assembly of integrated PLC chip |
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Application publication date: 20131009 |