CN103346128A - Manufacturing method of ONO structure in SONO device - Google Patents
Manufacturing method of ONO structure in SONO device Download PDFInfo
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- CN103346128A CN103346128A CN2013103029134A CN201310302913A CN103346128A CN 103346128 A CN103346128 A CN 103346128A CN 2013103029134 A CN2013103029134 A CN 2013103029134A CN 201310302913 A CN201310302913 A CN 201310302913A CN 103346128 A CN103346128 A CN 103346128A
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- ono structure
- silicon dioxide
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Abstract
The invention discloses a manufacturing method of an ONO structure in an SONO device. The manufacturing method of the ONO structure in the SONO device comprises the following steps of preparing bottom-layer silicon dioxide, preparing interlayer silicon nitride, and enabling the top layer of the interlayer silicon nitride to react with free radicals to generate a silicon dioxide layer by the adoption of the low-pressure radical oxidation method. According the manufacturing method of the NONO structure in the SONO device, the technological method of furnace tube low-pressure free radical oxidization is used for preparing the top-layer silicon dioxide in the ONO structure, the top-layer silicon dioxide is made to have a good thickness uniformity, and therefore the thickness uniformity of the three layers of the ONO structure can be improved. Compared with an existing two-step technology of HTO deposition and high-temperature densification, the manufacturing method of the ONO structure in the SONO device simplifies the processing step of top-layer densification, enables the technology to be simpler, is applicable to industrialization, and has a higher unit hourly output.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to the manufacture method of ONO structure in a kind of SONOS device.
Background technology
SONOS(Semiconductor-Oxide-Nitride-Oxide-Semiconductor) memory cell of memory is made up of the ONO laminated construction between control polysilicon gate and the raceway groove substrate.Wherein, the ONO structure is made of the sandwich structure of two-layer silicon dioxide layer (bottom and top) and middle silicon nitride layer.Three levels are from top to bottom respectively as structure tunnel layer, accumulation layer and barrier layer.Electric charge enters and is stored in the silicon nitride layer by direct tunnel effect, relies on the trap effect stored charge of silicon nitride film.The silicon dioxide layer on upper strata plays buffer action.
In the existing manufacturing process of ONO structure, bottom silicon dioxide generally adopts heat growth (consume silicon substrate) or LPCVD(Low Pressure Chemical Vapor Deposition, low-pressure chemical vapor deposition) deposit (not consume silicon substrate); The interlayer silicon nitride adopts the LPCVD deposit; Top layer silicon dioxide often adopts HTO(High Temperature Oxidation, high-temperature oxydation) depositing technics.Wherein:
1. the manufacturing process of bottom layer silicon dioxide generally comprises steps such as boiler tube thermal oxidation, nitrating, thermal annealing, and silica surface injects and thermal annealing by ion, or by boiler tube N
2O high-temperature ammonolysis surface silica dioxide and thermal annealing are introduced the Si-N key, improve the reliability of silicon dioxide, and and the bond strength of silicon nitride;
2. the manufacturing process of interlayer silicon nitride generally adopts boiler tube LPCVD deposit, in order to obtain the interlayer silicon nitride of the better uniformity and controllability, often adopts the low temperature nitride process, after increase temperature the silicon nitride densification process and realize;
3. top layer silicon dioxide generally adopts the HTO deposit of boiler tube, passes through the HTO densification process again, and common reacting gas is dichlorosilane (DCS) and nitrous oxide (N
2O), reaction typical conditions such as following table 1, reaction equation: SiH
2Cl
2+ N
2O → SiO
2+ N
2+ HCL.But, have bigger thickness uniformity difference between the different silicon chip of HTO technology, the ONO integral thickness uniformity is brought maximum influence.
Table 1
| Parameter | Depositing temperature (℃) | Deposition pressure (torr) | DCS flow (slm) | N 2O flow (slm) |
| Numerical value | 780 | 0.35 | 100 | 200 |
The different-thickness of three-layer thin-film and growth pattern have determined the heterogeneity of ONO.Wherein, the thickness uniformity quality of top layer silicon dioxide has leading role to the thickness uniformity of ONO three-layer thin-film.The top layer silicon dioxide that gets by above-mentioned existing technology preparation has the relatively poor thickness uniformity, makes thickness uniformity variation all of ONO three-layer thin-film, thereby influences the performance of SONOS device greatly.
Summary of the invention
In order to solve the problem that above-mentioned prior art exists, the invention provides the manufacture method of ONO structure in a kind of SONOS device, make top layer silicon dioxide have the thickness uniformity preferably, thereby improve the SONOS device performance.
The manufacture method of ONO structure may further comprise the steps in the SONOS device of the present invention:
Step S01, the preparation bottom layer silicon dioxide;
Step S02, preparation interlayer silicon nitride;
Step S03, the preparation top layer silicon dioxide;
Wherein, step S03 comprises that the top layer and the radical reaction that adopt low pressure free-radical oxidation method to make the interlayer silicon nitride generate silicon dioxide layer.
Among the present invention, step S01 and step S02 all adopt existing technology to prepare bottom layer silicon dioxide and interlayer silicon nitride.
Further, step S03 low pressure free-radical oxidation method (Low Pressure Radical Oxidation, be called for short LPRO) comprises that the boiler tube that mist with oxygen and hydrogen feeds high temperature, low pressure reacts.
Further, step S03 comprises oxygen and the hydrogen generation free radical that reacts to each other, and free radical and silicon nitride reaction generate silicon dioxide.
Further, this free radical comprises O
*, H
*And OH
*
Wherein, the main reaction of the primary reaction of oxygen and hydrogen and free radical and silicon nitride reaction comprises following reaction equation:
Primary reaction: (1) H
2+ O
2→ 2OH
*
（2）H
2+OH
*→H
2O+H
*
（3）O
2+H
*→OH
*+O
*
（4）H
2+O
*→OH
*+H
*
Main reaction: Si
3N
4+ O
*+ H
++ OH
*→ SiO
2+ N
2+ H
2
Further, hydrogen accounts for the 5-30% molar fraction of mist total amount in this mist.
Further, hydrogen accounts for the 10-15% molar fraction of mist total amount in this mist.
Further, this oxygen feeds boiler tube by single pipeline, and hydrogen feeds boiler tube by a plurality of pipelines.
Further, step S03 is by MFC(Mass Flow Controller, mass flow controller) interior oxygen and the hydrogen flowing quantity of control inflow boiler tube.
Further, the boiler tube interior reaction temperature is 900-1100 ℃ among the step S03, pressure position 0.3-0.4Torr.
The present invention proposes a kind of process of utilizing boiler tube low pressure free-radical oxidation and prepare top layer silicon dioxide in the ONO structure, can make the top layer silicon dioxide layer all have the thickness uniformity preferably, thereby improve the thickness uniformity of three levels of ONO structure; Compare with high temperature densification two-step process with the HTO deposit of prior art, simplified the top layer densification process step, make technology simpler, be suitable for industrialization; The present invention has higher unit hour output.
Embodiment
First embodiment
In the present embodiment, the manufacture method of ONO structure may further comprise the steps in the SONOS device:
Step S01 adopts steps such as boiler tube thermal oxidation, ion injection and thermal annealing to prepare bottom layer silicon dioxide;
Step S02 adopts boiler tube LPCVD deposit and high temperature (1000 ℃) densification process to prepare the interlayer silicon nitride;
Step S03 adopts low pressure free-radical oxidation legal system to be equipped with top layer silicon dioxide.
Particularly, step S03 comprises that the boiler tube that the mist of oxygen and hydrogen is fed high temperature (1000 ℃), low pressure (0.35Torr) reacts, and under the high-temperature low-pressure environment, hydrogen and oxygen produce the free radical O of high oxidation activity through primary reaction
*, H
*And OH
*, the free radical of high oxidation activity generates silicon dioxide by absorption, diffusion with interlayer silicon nitride generation main reaction.Wherein, primary reaction and main reaction comprise:
Primary reaction: (1) H
2+ O
2→ 2OH
*
（2）H
2+OH
*→H
2O+H
*
（3）O
2+H
*→OH
*+O
*
（4）H
2+O
*→OH
*+H
*
Main reaction: Si
3N
4+ O
*+ H
*+ OH
*→ SiO
2+ N
2+ H
2
Can draw by above-mentioned reaction equation, generate the SiO of 1 thickness
2Need to consume the Si of 0.6～0.7 thickness
3N
4And needs generate the top layer silicon dioxide of how much thickness, can regulate amount and the reaction time of free radical as required and realize.
Wherein, strict control hydrogen accounts for 10% molar fraction of mist total amount, when the hydrogen ratio be higher than the mist total amount 30% the time, can produce H
2O make reaction become wet-oxygen oxidation, and traditional wet-oxygen oxidation can not be oxidized to silicon dioxide with silicon nitride.
In the present embodiment, in order to improve the uniformity of reaction, oxygen feeds boiler tube by single pipeline, and hydrogen feeds boiler tube by four pipelines.Can change reaction speed by the hydrogen flowing quantity of regulating the boiler tube diverse location, suitably improve the content of hydrogen, generally also can improve reaction rate.The boiler tube of present embodiment is by oxygen and hydrogen flowing quantity in the MFC control inflow boiler tube.
Utilize this area conventional low pressure HTO equipment, the SONOS device that the present embodiment manufacture method makes is tested, the thickness uniformity of top layer silicon dioxide is less than 1%; And the device that existing technology makes, there is notable difference in the uniformity, and the general uniformity is prevalent in 1-2%, 2-3%, three zones of 3-4%.
Claims (9)
1. the manufacture method of ONO structure in the SONOS device may further comprise the steps:
Step S01, the preparation bottom layer silicon dioxide;
Step S02, preparation interlayer silicon nitride;
Step S03, the preparation top layer silicon dioxide;
It is characterized in that: step S03 comprises that the top layer and the radical reaction that adopt low pressure free-radical oxidation method to make the interlayer silicon nitride generate silicon dioxide layer.
2. the manufacture method of ONO structure in the SONOS device according to claim 1 is characterized in that: step S03 comprises that the boiler tube that the mist with oxygen and hydrogen feeds high temperature, low pressure reacts.
3. the manufacture method of ONO structure in the SONOS device according to claim 2 is characterized in that: step S03 comprises oxygen and the hydrogen generation free radical that reacts to each other, and free radical and silicon nitride reaction generate silicon dioxide.
4. the manufacture method of ONO structure in the SONOS device according to claim 3, it is characterized in that: this free radical comprises O
*, H
*And OH
*
5. the manufacture method of ONO structure in the SONOS device according to claim 4, it is characterized in that: hydrogen accounts for the 5-30% molar fraction of mist total amount in this mist.
6. the manufacture method of ONO structure in the SONOS device according to claim 5, it is characterized in that: hydrogen accounts for the 10-15% molar fraction of mist total amount in this mist.
7. according to the manufacture method of ONO structure in each described SONOS device of claim 2 to 6, it is characterized in that: this oxygen feeds boiler tube by single pipeline, and hydrogen feeds boiler tube by a plurality of pipelines.
8. the manufacture method of ONO structure in the SONOS device according to claim 7 is characterized in that: step S03 flows into oxygen and hydrogen flowing quantity in the boiler tube by MFC control.
9. the manufacture method of ONO structure in the SONOS device according to claim 8, it is characterized in that: the boiler tube interior reaction temperature is 900-1100 ℃ among the step S03, pressure position 0.3-0.4Torr.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108122747A (en) * | 2017-12-21 | 2018-06-05 | 上海华力微电子有限公司 | A kind of optimization method of photoetching alignment precision difference |
| CN109904069A (en) * | 2019-03-20 | 2019-06-18 | 上海华虹宏力半导体制造有限公司 | The forming method of ono dielectric layer |
| CN113161225A (en) * | 2021-01-14 | 2021-07-23 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof |
| CN113506756A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | HTO oxide layer process method in ONO process |
Citations (3)
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|---|---|---|---|---|
| US6624023B1 (en) * | 2002-05-23 | 2003-09-23 | Macronix International Co., Ltd. | Method for improving the performance of flash memory |
| CN1705087A (en) * | 2004-05-31 | 2005-12-07 | 旺宏电子股份有限公司 | Method for forming oxide layer in ONO structure |
| CN1725469A (en) * | 2004-07-23 | 2006-01-25 | 茂德科技股份有限公司 | Method for forming gate dielectric layer of ONO-type memory cell and high low voltage transistors |
-
2013
- 2013-07-18 CN CN201310302913.4A patent/CN103346128B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6624023B1 (en) * | 2002-05-23 | 2003-09-23 | Macronix International Co., Ltd. | Method for improving the performance of flash memory |
| CN1705087A (en) * | 2004-05-31 | 2005-12-07 | 旺宏电子股份有限公司 | Method for forming oxide layer in ONO structure |
| CN1725469A (en) * | 2004-07-23 | 2006-01-25 | 茂德科技股份有限公司 | Method for forming gate dielectric layer of ONO-type memory cell and high low voltage transistors |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108122747A (en) * | 2017-12-21 | 2018-06-05 | 上海华力微电子有限公司 | A kind of optimization method of photoetching alignment precision difference |
| CN109904069A (en) * | 2019-03-20 | 2019-06-18 | 上海华虹宏力半导体制造有限公司 | The forming method of ono dielectric layer |
| CN113161225A (en) * | 2021-01-14 | 2021-07-23 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof |
| CN113161225B (en) * | 2021-01-14 | 2024-02-06 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof |
| CN113506756A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | HTO oxide layer process method in ONO process |
| CN113506756B (en) * | 2021-06-28 | 2024-04-23 | 上海华虹宏力半导体制造有限公司 | HTO oxide layer process method in ONO process |
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| Publication number | Publication date |
|---|---|
| CN103346128B (en) | 2015-09-09 |
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