CN103342558A - Microwave dielectric ceramic Ba3Ti2V4O17 capable of realizing low temperature sintering and preparation method thereof - Google Patents
Microwave dielectric ceramic Ba3Ti2V4O17 capable of realizing low temperature sintering and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a microwave dielectric ceramic Ba3Ti2V4O17 capable of realizing low temperature sintering and a preparation method thereof. A vanadate microwave dielectric ceramic material capable of realizing low temperature sintering has the composition of Ba3Ti2V4O17. The preparation method comprises the following steps of: (1) weighing and dosing original powder of BaCO3, TiO2 and V2O5 with the purity of over 99.9 percent according to a chemical formula of Ba3Ti2V4O17; (2) performing wet ball milling and mixing the raw materials in the step (1) for 12 hours, wherein the solvent is distilled water, and pre-sintering at the temperature of 750 DEG C in atmosphere for 6 hours after drying; and (3) adding an adhesive into the powder prepared in the step (2) and pelleting, pressing and forming, and finally, sintering at the temperature of 830-850 DEG C in atmosphere for 4 hours, wherein the adhesive is a polyvinyl alcohol solution with the mass concentration of 5 percent, and the dose accounts for 3 percent of the total mass of the powder. The prepared ceramic has good sintering performance at the temperature of 850-900 DEG C and has the dielectric constant of 15-16, quality factor Qf is up to 77000-93000GHz, the resonant frequency temperature coefficient is low, the microwave dielectric ceramic can be subjected to low-temperature co-firing with an Ag electrode, and the microwave dielectric ceramic has extremely high application value in industry.
Description
Technical field
The present invention relates to dielectric ceramic material, particularly relate to microwave dielectric ceramic material of the microwave devices such as medium substrate, resonator and wave filter that use in microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to be applied in microwave frequency band (mainly being UHF, the SHF frequency range) circuit as dielectric material and finishes the pottery of one or more functions, in modern communication, be widely used as components and parts such as resonator, wave filter, dielectric substrate and medium guided wave loop, it is the key foundation material of modern communication technology, very important use has been arranged at aspects such as portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radars, in the miniaturization of modern communication instrument, integrated process, just brought into play increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, should satisfy the requirement of following dielectric characteristics: (1) seriation DIELECTRIC CONSTANT
rTo adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ are to reduce noise, and one requires Qf 〉=3000GHz; (3) the temperature factor τ of resonant frequency
fAs far as possible little of guaranteeing that device has good thermostability, one requirement-10/ ℃≤τ
f≤+10ppm/ ℃.In the world from late 1930s just the someone attempt dielectric substance is applied to microwave technology.
According to relative permittivity ε
rSize with use the different of frequency range, the microwave-medium ceramics that is developed He developing can be divided into 4 classes usually.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al
2O
3-TiO
2, Y
2BaCuO
5, MgAl
2O
4And Mg
2SiO
4Deng, its ε
r≤ 20, quality factor q * f 〉=50000GHz, τ
f≤ 10ppm/ ℃.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε
rWith the microwave dielectric ceramic of high Q value, mainly be BaO-MgO-Ta
2O
5, BaO-ZnO-Ta
2O
5Or BaO-MgO-Nb
2O
5, BaO-ZnO-Nb
2O
5System or the composite system MWDC material between them.Its ε
r=25~30, Q=(1~2) * 10
4(under f 〉=10GHz), τ
f≈ 0.Be mainly used in the microwave communication equipments such as direct broadcasting satellite of f 〉=8GHz as the dielectric resonance device.
(3) medium ε
rWith the microwave dielectric ceramic of Q value, mainly be with BaTi
4O
9, Ba
2Ti
9O
20(Zr, Sn) TiO
4Deng the MWDC material that is base, its ε
r=35~40, Q=(6~9) * 10
3(f=3~-4GHz under), τ
f≤ 5ppm/ ℃.Be mainly used in the interior microwave military radar of 4~8GHz range of frequency and the communication system as the dielectric resonance device.
(4) high ε
rAnd the lower microwave dielectric ceramic of Q value is mainly used in civilian mobile communcations system in 0.8~4GHz range of frequency, and this also is the emphasis of microwave dielectric ceramic research.Since the eighties, people such as Kolar, Kato find and have studied perovskite-like tungsten bronze type BaO-Ln in succession
2O
3-TiO
2Series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li
2O-Ln
2O
3-TiO
2Series, lead base series material, Ca
1-xLn
2x/3TiO
3Be contour ε
rMicrowave dielectric ceramic, the wherein BaO-Nd of BLT system
2O
3-TiO
2Material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO
3Specific inductivity reaches 105.
More than these material systems sintering temperature one be higher than 1300 ℃, can not be directly and low melting point metals such as Ag and Cu burn the formation laminated ceramic capacitor altogether.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, domestic and international research personnel have carried out exploring widely and studying to some low fever's system materials, mainly be to adopt devitrified glass or glass-ceramic composite system, because low melting glass has higher relatively dielectric loss mutually, the existence of glassy phase has improved the dielectric loss of material greatly.Therefore the low fired microwave dielectric ceramic material of the no glassy phase of development is the emphasis of current research.
Can hang down in the process of fired microwave dielectric ceramic materials in exploration and development of new, material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstate architecture compound and tellurate architecture compound have obtained extensive concern and research, owing to contain compounds such as Bi, Te and Mo easy and Ag electrode generation surface reaction and raw material TeO
2Poisonously make the application of these Bi, Te and Mo sill be restricted, but therefore low fever's high performance microwave media ceramic system is still very limited, this has limited the development of low temperature co-fired technology and microwave multilayer device to a great extent.
Summary of the invention
The purpose of this invention is to provide a kind of have low-loss and good thermostability, simultaneously microwave dielectric ceramic material that sintering temperature is low and preparation method thereof.
The chemical constitution of the low temperature sintering microwave dielectric ceramic material that the present invention relates to is: Ba
3Ti
2V
4O
17
Preparation method's concrete steps of described low temperature sintering microwave dielectric ceramic are:
(1) with purity is BaCO more than 99.9%
3, TiO
2And V
2O
5Starting powder press Ba
3Ti
2V
4O
17The chemical formula weigh batching.
(2) step (1) raw material wet ball-milling was mixed 12 hours, solvent is distilled water, the pre-burning 6 hours in 750 ℃ of air atmosphere of oven dry back.
(3) in the powder that step (2) makes, add binding agent and granulation after, compression moulding again, sintering 4 hours in 830~850 ℃ of air atmosphere at last; Described binding agent employing mass concentration is 5% polyvinyl alcohol solution, and dosage accounts for 3% of powder total mass.
The pottery of the present invention's preparation is good at 830-850 ℃ of sintering, its specific inductivity reaches 15~16, and quality factor q f value is up to 77000-93000GHz, and temperature coefficient of resonance frequency is little, and can be low temperature co-fired with the Ag electrode, therefore industrial great using value arranged.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and the microwave dielectric property thereof that constitutes different sintering temperatures of the present invention.Its preparation method carries out the evaluation of microwave dielectric property as mentioned above with the cylindrical dielectric resonator method; With powder mix with the Ag powder that accounts for powder quality 20%, after the compression moulding, at 880 ℃ of sintering; X-ray diffraction material phase analysis and scanning electron microscopic observation all show Ba
3Ti
2V
4O
17Chemical reaction, i.e. Ba do not take place with Ag
3Ti
2V
4O
17Can be low temperature co-fired with the Ag electrode.
The present invention never is limited to above embodiment.The bound of sintering temperature, interval value can both realize the present invention, do not enumerate embodiment one by one at this.
This pottery can be widely used in the manufacturing of microwave devices such as various medium substrates, resonator and wave filter, can satisfy the Technology Need of systems such as mobile communication, satellite communications.
Table 1:
Claims (1)
1. but the application of a vanadate conduct low-temperature sintered microwave dielectric ceramic is characterized in that the chemical constitution formula of described vanadate is: Ba
3Ti
2V
4O
17;
Preparation method's concrete steps of described vanadate are:
(1) with purity is BaCO more than 99.9%
3, TiO
2And V
2O
5Starting powder press Ba
3Ti
2V
4O
17The chemical formula weigh batching;
(2) step (1) raw material wet ball-milling was mixed 12 hours, solvent is distilled water, the pre-burning 6 hours in 750 ℃ of air atmosphere of oven dry back;
(3) in the powder that step (2) makes, add binding agent and granulation after, compression moulding again, sintering 4 hours in 830 ~ 850 ℃ of air atmosphere at last; Described binding agent employing mass concentration is 5% polyvinyl alcohol solution, and dosage accounts for 3% of powder total mass.
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103553613A (en) * | 2013-11-11 | 2014-02-05 | 桂林理工大学 | Microwave dielectric ceramic BaV2Nb2O11 capable of sintering at low temperature and preparation method thereof |
CN104646002A (en) * | 2015-02-28 | 2015-05-27 | 桂林理工大学 | Photocatalyst KCuSb5O14 with visible light response and preparation method thereof |
CN104667905A (en) * | 2015-02-28 | 2015-06-03 | 桂林理工大学 | Photocatalyst LiSm2NbO6 with visible light response and preparation method thereof |
CN104944950A (en) * | 2015-05-23 | 2015-09-30 | 桂林理工大学 | High-quality-factor low-dielectric-constant microwave dielectric ceramic BaLi2Zn2V8O24 |
CN105198420A (en) * | 2015-09-30 | 2015-12-30 | 桂林理工大学 | High curie-point positive temperature coefficient resistance material Ba3Ti2V4O17 and preparation method thereof |
CN105254290A (en) * | 2015-09-28 | 2016-01-20 | 桂林理工大学 | High curie point positive temperature coefficient resistance material Ba2BiTiV3O13 and preparation method thereof |
CN105272239A (en) * | 2015-09-30 | 2016-01-27 | 桂林理工大学 | High-Curie point positive temperature coefficient resistor material Ba3Ti4V4O21 and preparation method thereof |
CN105693233A (en) * | 2016-02-18 | 2016-06-22 | 桂林理工大学 | High-quality-factor low-dielectric-constant microwave dielectric ceramic Ca3Bi2V2O11 |
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CN102660274A (en) * | 2012-05-04 | 2012-09-12 | 苏州大学 | Vanadate single-matrix yellow fluorescent powder and preparation method thereof |
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CN102660274A (en) * | 2012-05-04 | 2012-09-12 | 苏州大学 | Vanadate single-matrix yellow fluorescent powder and preparation method thereof |
Non-Patent Citations (1)
Title |
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蔡绍等: "V2O5添加对BaTi4O9微波介电陶瓷性能影响", 《中国陶瓷》 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103553613A (en) * | 2013-11-11 | 2014-02-05 | 桂林理工大学 | Microwave dielectric ceramic BaV2Nb2O11 capable of sintering at low temperature and preparation method thereof |
CN104646002A (en) * | 2015-02-28 | 2015-05-27 | 桂林理工大学 | Photocatalyst KCuSb5O14 with visible light response and preparation method thereof |
CN104667905A (en) * | 2015-02-28 | 2015-06-03 | 桂林理工大学 | Photocatalyst LiSm2NbO6 with visible light response and preparation method thereof |
CN104944950A (en) * | 2015-05-23 | 2015-09-30 | 桂林理工大学 | High-quality-factor low-dielectric-constant microwave dielectric ceramic BaLi2Zn2V8O24 |
CN105254290A (en) * | 2015-09-28 | 2016-01-20 | 桂林理工大学 | High curie point positive temperature coefficient resistance material Ba2BiTiV3O13 and preparation method thereof |
CN105198420A (en) * | 2015-09-30 | 2015-12-30 | 桂林理工大学 | High curie-point positive temperature coefficient resistance material Ba3Ti2V4O17 and preparation method thereof |
CN105272239A (en) * | 2015-09-30 | 2016-01-27 | 桂林理工大学 | High-Curie point positive temperature coefficient resistor material Ba3Ti4V4O21 and preparation method thereof |
CN105693233A (en) * | 2016-02-18 | 2016-06-22 | 桂林理工大学 | High-quality-factor low-dielectric-constant microwave dielectric ceramic Ca3Bi2V2O11 |
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