CN103335663B - A kind of Flouride-resistani acid phesphatase indication test method of lens of star sensor - Google Patents
A kind of Flouride-resistani acid phesphatase indication test method of lens of star sensor Download PDFInfo
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- CN103335663B CN103335663B CN201310267808.1A CN201310267808A CN103335663B CN 103335663 B CN103335663 B CN 103335663B CN 201310267808 A CN201310267808 A CN 201310267808A CN 103335663 B CN103335663 B CN 103335663B
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Abstract
The invention discloses a kind of Flouride-resistani acid phesphatase indication test method of lens of star sensor, in standard dose field, dose calibration demarcation is carried out to colour developing film dosimeter, optical density is converted to absorbing agent value; Lens of star sensor material is made a pair wedge-shaped optical die body, this is staggered relatively to optics die body inclined-plane, and the colour developing film dosimeter demarcated through dose calibration is set between two optics die body inclined-planes; Set up the conversion relation of colour developing film dosimeter length and the optics die body degree of depth, obtain the depth-dose distribution curve of electron beam in optics die body; Use electron accelerator optics die body to be irradiated to the integral dose of regulation, with the optical density changing value of spectrophotometer measurement colour developing film dosimeter, obtain the dose profile of lens of star sensor; Measure lens of star sensor thickness, on dose profile, inquiry obtains Flouride-resistani acid phesphatase index corresponding to the responsive camera lens thickness of star.The present invention can carry out the ground irradiation test of Flouride-resistani acid phesphatase index to lens of star sensor.
Description
Technical field
The present invention relates to star sensor, particularly relate to a kind of Flouride-resistani acid phesphatase indication test method of lens of star sensor.
Background technology
The appearance of eighties of last century the mid-1970s CCD technology, drastically increases the precision of star sensor, greatly accelerates the development of star sensor simultaneously.Be widely applied in the development of star sensor rapidly because CCD has the plurality of advantages such as volume is little, lightweight, power consumption is little, reliability is high.The employing of CCD technology and the independence of attitude measurement are the notable features that the heavenly body sensor of this generation is different from the heavenly body sensor in last generation.The star sensor that China develops voluntarily adopts business level CCD device, it is as the radioresistance weak link of star sensor complete machine, the design of good Flouride-resistani acid phesphatase must be done to the optical lens part before CCD, thus the space radiation that opposing is stronger, the precondition that research is Star-Sensor Design and reasonable selection components and parts is launched to the Flouride-resistani acid phesphatase index of star sensor each several part, and the Flouride-resistani acid phesphatase index test of camera lens part is domestic at present still belongs to blank.
Summary of the invention
The object of the invention is to overcome defect of the prior art, a kind of Flouride-resistani acid phesphatase indication test method of lens of star sensor is provided, the ground irradiation test of lens of star sensor Flouride-resistani acid phesphatase index can be carried out.
To achieve these goals, technical scheme of the present invention is to provide a kind of Flouride-resistani acid phesphatase indication test method of lens of star sensor, and it comprises following steps:
Step 1, carries out dose calibration demarcation to colour developing film dosimeter, by the linear relationship between spectrophotometer measurement irradiation dose and optical density changing value, thus optical density is converted to absorbing agent value in standard dose field.
Step 2, makes a pair wedge-shaped optical die body by lens of star sensor material, its cross section is right-angle triangle, and this is staggered relatively to optics die body inclined-plane, and between two optics die body inclined-planes, arrange the colour developing film dosimeter demarcated through dose calibration.
Step 3, the optics die body degree of depth is the right angle length of side of its cross section right-angle triangle, the cross section hypotenuse appearance etc. of colour developing film dosimeter length and optics die body, right-angle triangle three frontier juncture is utilized to be, set up the tangent relationship between colour developing film dosimeter length and the optics die body degree of depth, the change of dosage edge colour developing film dosimeter length is converted to the change of dosage along the optics die body degree of depth, thus obtains the depth-dose distribution curve of electron beam in optics die body.
Step 4, uses electron accelerator optics die body to be irradiated to the integral dose of regulation, with the optical density changing value of spectrophotometer measurement colour developing film dosimeter, obtains the dose profile of lens of star sensor.
Step 5, measures lens of star sensor thickness, and on dose profile, inquiry obtains Flouride-resistani acid phesphatase index corresponding to the responsive camera lens thickness of star.
In step 4, electron accelerator preferred nominal electron energy scope 1 ~ 2MeV carries out irradiation in vertical incidence mode to optics die body.
The present invention has following good effect:
Use the Flouride-resistani acid phesphatase indication test method of lens of star sensor of the present invention can measure the dose profile of electron beam along optics die body depth direction of different-energy fast and effectively, for the design of lens of star sensor Flouride-resistani acid phesphatase provides test basis.
Accompanying drawing explanation
Fig. 1 is process flow diagram of the present invention;
Fig. 2 is wedge-shaped optical die body irradiation schematic diagram of the present invention;
Fig. 3 is the depth-dose distribution curve of lens of star sensor material under different-energy electron beam in specific embodiments of the invention.
Embodiment
Below in conjunction with accompanying drawing, by describing a preferably specific embodiment in detail, the present invention is further elaborated.
As shown in Figure 1, the Flouride-resistani acid phesphatase indication test method of a kind of lens of star sensor of the present invention comprises following steps:
Step 1, carries out dose calibration demarcation to colour developing film dosimeter 2, by the linear relationship between spectrophotometer measurement irradiation dose and optical density changing value, thus optical density is converted to absorbing agent value in standard dose field.
The present embodiment adopts Xinjiang physiochemical techniques research institute colour developing membrane agent system for measuring quantity and EGSnrc Monte Carlo transport computing system.
Step 2, as shown in Figure 2, lens of star sensor material is made a pair wedge-shaped optical die body 1, its cross section is right-angle triangle, this is staggered relatively to optics die body 1 inclined-plane, and the colour developing film dosimeter 2 demarcated through dose calibration is set between two optics die body 1 inclined-planes.
The lens of star sensor material of the present embodiment is optical glass, comprises silicon dioxide, diboron trioxide, baryta, sodium oxide molybdena, kali, arsenic oxide arsenoxide, and its concrete composition is as shown in table 1.
Table 1 lens of star sensor material composition table
The present embodiment uses the special long 10cm in a pair of lens of star sensor material, wide 0.75cm, inclination angle is the wedge-shaped optical die body of atan (0.75/10), and separately special a pair inclination angle is the optics die body of atan (1.5/10) and a pair inclination angle is that the optics die body of atan (1.0/10) is as subsequent use.
The colour developing film dosimeter of long 50mm, wide 15mm, thick 0.18mm is arranged between the inclined-plane of a pair wedge-shaped optical die body by the present embodiment.
Step 3, optics die body 1 degree of depth is the right angle length of side of its cross section right-angle triangle, the cross section hypotenuse appearance etc. of colour developing film dosimeter 2 length and optics die body 1, right-angle triangle three frontier juncture is utilized to be, set up the tangent relationship between colour developing film dosimeter 2 length and optics die body 1 degree of depth, the change of dosage edge colour developing film dosimeter 2 length is converted to the change of dosage along the optics die body degree of depth, thus obtains the depth-dose distribution curve of electron beam in optics die body 1.
Step 4, electron accelerator is used optics die body 1 to be irradiated to the integral dose of regulation, after colour developing film dosimeter lucifuge is placed 24 hours, with the optical density changing value of spectrophotometer measurement colour developing film dosimeter 2, obtain the dose profile of lens of star sensor.
Electron accelerator preferred nominal electron energy scope 1 ~ 2MeV carries out irradiation in vertical incidence mode to optics die body 1.
The resolution of 0.02mm can be reached during the spectrophotometer scanning colour developing film dosimeter that the present embodiment adopts, therefore can reach the resolution of 0.02*atan (0.75/10)=0.0015mm in the dosage measurement resolution of optics die body depth direction.
The present embodiment adopts ELV-8 type 2MeV electron accelerator to test under 25 DEG C of environment temperatures.The nominal energy of electron accelerator is demarcated by China National Measuring Science Research Inst.'s range method, and air layer is revised by following formula the loss dE that electron energy causes:
dE=S/ρ·L·ρ
In formula, S/ ρ is the mass stopping power of air to electronics, and L is air layer thickness, and ρ is atmospheric density.Calculate the energy that 1.0 ~ 1.8MeV electron beam loses about 0.07MeV in 20cm air and 0.005cm titanium window.Therefore, in irradiation experiment, accelerator nominal energy is 1.1MeV, 1.50MeV, 1.80MeV, and actual energy is respectively 1.03MeV, 1.43MeV and 1.73MeV.This electron accelerator nominal line 0.01mA, distance goes out to restraint mouth 20cm, dose rate 17Gy/s.The present embodiment electron accelerator to optics die body exposure time 5 seconds, irradiation accumulated dose 85Gy.
Adopt EGSnrc Monte Carlo transport computing system analog computation electron energy be the electron beam of 1.03MeV, 1.43MeV and the 1.73MeV energy deposition in optics die body respectively, this analog computation is divided into two steps to calculate:
First, application Beamnrc simulates monoenergetic electrons transporting in 0.05mm and 20cm air, arranges counting plane, form the phase space file of this plane in 20cm air layer bottom surface.
Then, application Dosxyznrc calculates to calculate the phase space file of gained for source, the dosage distribution in optics die body.Optics die body is divided into long 1cm, wide 1cm, the unit of high 0.1cm, calculates the dosage that each unit absorbs.Choose the dose value of die body center one column unit, can draw depth-dose distribution curve, the incident particle number chosen during calculating is 200000000, and the uncertainty of each dosage unit value result of calculation is less than 1%.
The electron beam that test and analog computation obtain three kinds of electron energies along optics die body depth direction dose profile as shown in Figure 3.Wherein curve is measurement result, puts as analog computation result.
Range data as shown in table 2 as can be drawn from Figure 3, as shown in table 2:
The range data of table 2 three kinds of electron beams
As can be seen from test and Monte Carlo simulation data, the extrapolated range of the extrapolated range of 1.03MeV electron beam in optics die body to be the extrapolated range of 1.27mm, 1.43MeV electron beam be 1.85mm, 1.73MeV electron beam is 2.45mm.At extrapolated range depth, dosage has decayed to less than 10% of maximum dose.And dosage being reduced to substantially be the maximum range of 0 to be respectively: 1.03MeV electronics is 1.65mm, and 1.43MeV electronics is 2.4mm, and 1.73MeV electronics is 3.05mm.
In optical material depths, the depth-dose distribution curve that Monte Carlo simulation calculates and the curve of measurement meet relatively good.
Step 5, measures lens of star sensor thickness, and on dose profile, inquiry obtains Flouride-resistani acid phesphatase index corresponding to the responsive camera lens thickness of star.
In sum, the present invention is by testing out the lens of star sensor material of different-thickness to the transmittance graph of electron beam, and the thickness of contrast lens of star sensor, can obtain the attenuation coefficient of lens of star sensor to space particle radiation.Use the Flouride-resistani acid phesphatase indication test method of lens of star sensor of the present invention can measure the dose profile of electron beam along optics die body depth direction of different-energy fast and effectively, for the design of lens of star sensor Flouride-resistani acid phesphatase provides test basis.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (2)
1. a Flouride-resistani acid phesphatase indication test method for lens of star sensor, is characterized in that, comprise following steps:
Step 1, carries out dose calibration demarcation to colour developing film dosimeter (2), by the linear relationship between spectrophotometer measurement irradiation dose and optical density changing value, thus optical density is converted to absorbing agent value in standard dose field;
Step 2, lens of star sensor material is made a pair wedge-shaped optical die body (1), its cross section is right-angle triangle, and this is staggered relatively to optics die body inclined-plane, and between two optics die body (1) inclined-planes, arrange the colour developing film dosimeter (2) demarcated through dose calibration;
Step 3, optics die body (1) degree of depth is the right angle length of side of its cross section right-angle triangle, the cross section hypotenuse appearance etc. of colour developing film dosimeter (2) length and optics die body (1), right-angle triangle three frontier juncture is utilized to be, set up the tangent relationship between colour developing film dosimeter (2) length and optics die body (1) degree of depth, the change of dosage edge colour developing film dosimeter (2) length is converted to the change of dosage along the optics die body degree of depth, thus obtains the depth-dose distribution curve of electron beam in optics die body (1);
Step 4, uses electron accelerator optics die body (1) to be irradiated to the integral dose of regulation, the optical density changing value of the film dosimeter (2) that develops the color with spectrophotometer measurement, obtains the dose profile of lens of star sensor;
Step 5, measures lens of star sensor thickness, and on dose profile, inquiry obtains Flouride-resistani acid phesphatase index corresponding to the responsive camera lens thickness of star.
2. the Flouride-resistani acid phesphatase indication test method of lens of star sensor as claimed in claim 1, is characterized in that, in described step 4, and electron accelerator nominal electron energy scope 1 ~ 2MeV, and in vertical incidence mode, irradiation is carried out to optics die body (1).
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| CN107462240B (en) * | 2017-08-28 | 2023-08-11 | 浙江大学 | Double-shaft interference star sensor device based on two-dimensional grating |
| CN110988957B (en) * | 2019-12-24 | 2023-06-02 | 深圳大学 | Measuring device and method for depth dose distribution based on proton irradiation source |
| CN111158041B (en) * | 2020-01-10 | 2022-03-08 | 深圳大学 | Portable calibration60Device and method for Co gamma ray three-dimensional dose field |
| CN112504635B (en) * | 2020-11-18 | 2021-10-01 | 北京控制工程研究所 | Optical wedge type space high-precision pointing measuring instrument calibration device |
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| CN102901516A (en) * | 2012-09-29 | 2013-01-30 | 航天恒星科技有限公司 | Multispectral image radiation correction method based on absolute radiometric calibration |
| CN202916206U (en) * | 2012-11-27 | 2013-05-01 | 王菲 | Device for measuring and evaluating laser-induced damage resisting capacity of film |
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| CN102901516A (en) * | 2012-09-29 | 2013-01-30 | 航天恒星科技有限公司 | Multispectral image radiation correction method based on absolute radiometric calibration |
| CN202916206U (en) * | 2012-11-27 | 2013-05-01 | 王菲 | Device for measuring and evaluating laser-induced damage resisting capacity of film |
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Effective date of registration: 20170621 Address after: 200233 Xuhui District, Yishan Road, No. 710, Patentee after: SHANGHAI AEROSPACE CONTROL TECHNOLOGY RESEARCH INSTITUTE Address before: 200233 Xuhui District, Yishan Road, No. 710, Patentee before: Shanghai Xinyue Instrument Factory |