CN103335663A - Method for testing radiation-resistant index of star sensor lens - Google Patents

Method for testing radiation-resistant index of star sensor lens Download PDF

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CN103335663A
CN103335663A CN2013102678081A CN201310267808A CN103335663A CN 103335663 A CN103335663 A CN 103335663A CN 2013102678081 A CN2013102678081 A CN 2013102678081A CN 201310267808 A CN201310267808 A CN 201310267808A CN 103335663 A CN103335663 A CN 103335663A
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dose
star sensor
die body
lens
optics die
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CN103335663B (en
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梁珣
于朝霞
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Shanghai Aerospace Control Technology Institute
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Shanghai Xinyue Instrument Factory
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Abstract

The invention discloses a method for testing a radiation-resistant index of a star sensor lens. The method comprises the following steps of: performing dose scale calibration on a developing film dose meter in a standard dose field, and converting optical density into an absorbed dose value; manufacturing the star sensor lens material into a pair of wedge-shaped optical modes, arranging the inclined surfaces of the pair of wedge-shaped optical modes opposite to each other, and setting the developing film dose meter subjected to dose scale calibration between the inclined surfaces of the two wedge-shaped optical modes; establishing a conversion relation between the length of the developing film dose meter and the depth of the optical modes, and obtaining a depth dose distribution curve of electron beams in the optical modes; irradiating the optical modes to the specific accumulated dose by adopting an electron accelerator, measuring the optical density change value of the developing film dose meter by adopting a spectrophotometer, and obtaining a dose distribution curve of the star sensor lens; and measuring the thickness of the star sensor lens, and querying to obtain the radiation-resistant index which corresponds to the thickness of the star sensor lens on the dose distribution curve. According to the method, the star sensor lens can be subjected to ground irradiation test of the radiation-resistant index.

Description

A kind of anti-irradiation indication test method of lens of star sensor
Technical field
The present invention relates to star sensor, relate in particular to a kind of anti-irradiation indication test method of lens of star sensor.
Background technology
The appearance of eighties of last century the mid-1970s CCD technology has greatly improved the precision of star sensor, has accelerated the development of star sensor simultaneously greatly.Have plurality of advantages such as volume is little, in light weight, power consumption is little, reliability height is widely applied in the development of star sensor rapidly owing to CCD.The employing of CCD technology and the independence of attitude measurement are the notable features that the heavenly body sensor of this generation is different from the heavenly body sensor in last generation.The star sensor that China develops voluntarily adopts business level CCD device, it is as the radioresistance weak link of star sensor complete machine, must partly do good anti-irradiation design to the optical lens of CCD front, thereby resist stronger space radiation, it is Star-Sensor Design and the precondition of rationally selecting components and parts for use that the anti-irradiation index of star sensor each several part is launched to study, and the at present domestic blank that still belongs to of the anti-irradiation index test of camera lens part.
Summary of the invention
The objective of the invention is to overcome defective of the prior art, a kind of anti-irradiation indication test method of lens of star sensor is provided, can carry out the ground irradiation test of the anti-irradiation index of lens of star sensor.
To achieve these goals, technical scheme of the present invention provides a kind of anti-irradiation indication test method of lens of star sensor, and it comprises following steps:
Step 1 is carried out dose calibration to the colour developing film dosimeter and is demarcated in the standard dose field, by the linear relationship between spectrophotometer measurement irradiation dose and the optical density changing value, thereby optical density is converted to the absorbing agent value.
Step 2 is made a pair of wedge shape optics die body with the lens of star sensor material, and its cross section is right-angle triangle, and this is staggered relatively to optics die body inclined-plane, and the colour developing film dosimeter of demarcating through dose calibration is set between two optics die body inclined-planes.
Step 3, the optics die body degree of depth is the right angle length of side of its cross section right-angle triangle, the cross section hypotenuse appearance of colour developing film dosimeter length and optics die body etc., utilize right-angle triangle three frontier junctures system, set up the tangent relationship between colour developing film dosimeter length and the optics die body degree of depth, dosage is converted to dosage along the variation of the optics die body degree of depth along the variation of colour developing film dosimeter length, thereby obtains the depth dose distribution curve of electron beam in the optics die body.
Step 4 uses electron accelerator that the optics die body is irradiated to the integral dose of regulation, with the optical density changing value of spectrophotometer measurement colour developing film dosimeter, obtains the dosage distribution curve of lens of star sensor.
Step 5 is measured lens of star sensor thickness, obtains the anti-irradiation index of the responsive camera lens thickness of star correspondence in the inquiry of dosage distribution curve.
Electron accelerator preferred nominal electron energy scope 1 ~ 2MeV carries out irradiation in the vertical incidence mode to the optics die body in the step 4.
The present invention has following good effect:
Use the anti-irradiation indication test method of lens of star sensor of the present invention can measure the electron beam of different-energy fast and effectively along the dosage distribution curve of optics die body depth direction, for the anti-irradiation design of lens of star sensor provides test basis.
Description of drawings
Fig. 1 is process flow diagram of the present invention;
Fig. 2 is wedge shape optics die body irradiation synoptic diagram of the present invention;
Fig. 3 is the depth dose distribution curve of lens of star sensor material under the different-energy electron beam in the specific embodiments of the invention.
Embodiment
Below in conjunction with accompanying drawing, by describing a preferable specific embodiment in detail, the present invention is further elaborated.
As shown in Figure 1, the anti-irradiation indication test method of a kind of lens of star sensor of the present invention comprises following steps:
Step 1 is carried out dose calibration to colour developing film dosimeter 2 and is demarcated in the standard dose field, by the linear relationship between spectrophotometer measurement irradiation dose and the optical density changing value, thereby optical density is converted to the absorbing agent value.
Present embodiment adopts Xinjiang physics and chemistry technical institute colour developing membrane agent system for measuring quantity and EGSnrc Monte Carlo to transport computing system.
Step 2, as shown in Figure 2, the lens of star sensor material is made a pair of wedge shape optics die body 1, its cross section is right-angle triangle, this is staggered relatively to optics die body 1 inclined-plane, and the colour developing film dosimeter of demarcating through dose calibration 2 is set between two optics die bodys, 1 inclined-plane.
The lens of star sensor material of present embodiment is optical glass, comprises silicon dioxide, diboron trioxide, baryta, sodium oxide molybdena, kali, arsenic oxide arsenoxide, and its concrete composition is as shown in table 1.
Table 1 lens of star sensor material composition table
Figure 2013102678081100002DEST_PATH_IMAGE001
Present embodiment uses a pair of long 10cm of the special one-tenth of lens of star sensor material, wide 0.75cm, the inclination angle is the wedge shape optics die body of atan (0.75/10), and in addition special a pair of inclination angle is that the optics die body of atan (1.5/10) and optics die body that a pair of inclination angle is atan (1.0/10) are as standby.
Present embodiment will long 50mm, the colour developing film dosimeter of wide 15mm, thick 0.18mm is arranged between the inclined-plane of a pair of wedge shape optics die body.
Step 3, optics die body 1 degree of depth is the right angle length of side of its cross section right-angle triangle, the cross section hypotenuse appearance of colour developing film dosimeter 2 length and optics die body 1 etc., utilize right-angle triangle three frontier junctures system, set up the tangent relationship between colour developing film dosimeter 2 length and optics die body 1 degree of depth, dosage is converted to dosage along the variation of the optics die body degree of depth along the variation of colour developing film dosimeter 2 length, thereby obtains the depth dose distribution curve of electron beam in optics die body 1.
Step 4, use electron accelerator optics die body 1 to be irradiated to the integral dose of regulation, the film dosimeter lucifuge that will develop the color was placed after 24 hours, with the optical density changing value of spectrophotometer measurement colour developing film dosimeter 2, obtained the dosage distribution curve of lens of star sensor.
Electron accelerator preferred nominal electron energy scope 1 ~ 2MeV carries out irradiation in the vertical incidence mode to optics die body 1.
The spectrophotometer scanning that present embodiment adopts can reach the resolution of 0.02mm when developing the color film dosimeter, therefore can reach the resolution of 0.02*atan (0.75/10)=0.0015mm in the dosage measurement resolution of optics die body depth direction.
Present embodiment adopts ELV-8 type 2MeV electron accelerator to test under 25 ℃ of environment temperatures.The nominal energy of electron accelerator is demarcated with range method by China National Measuring Science Research Inst., and air layer is revised by following formula the loss dE that electron energy causes:
dE=S/ρ·L·ρ
In the formula, S/ ρ be air to the mass stopping power of electronics, L is air layer thickness, ρ is atmospheric density.Calculate 1.0 ~ 1.8MeV electron beam and in 20cm air and 0.005cm titanium window, lose the energy of about 0.07MeV.Therefore, the accelerator nominal energy is 1.1MeV, 1.50MeV, 1.80MeV in the irradiation experiment, and actual energy is respectively 1.03MeV, 1.43MeV and 1.73MeV.This electron accelerator nominal line 0.01mA, distance goes out bundle mouthful 20cm, dose rate 17Gy/s.The present embodiment electron accelerator is to optics die body exposure time 5 seconds, irradiation accumulated dose 85Gy.
Adopt the EGSnrc Monte Carlo transport the computing system analog computation electron energy be 1.03MeV, the energy deposition of the electron beam of 1.43MeV and 1.73MeV in the optics die body respectively, this analog computation is divided into two steps and calculates:
At first, use Beamnrc simulation monoenergetic electrons at 0.05mm and 20cm is airborne transports, the counting plane is set in 20cm air layer bottom surface, form the phase space file on this plane.
Then, the phase space file that application Dosxyznrc calculates gained is the source, and the dosage in the optics die body distributes.The optics die body is divided into long 1cm, wide 1cm, the unit of high 0.1cm calculates the dosage that each unit absorbs.Choose the dose value of die body center one column unit, can draw the depth dose distribution curve, the incident particle number of choosing during calculating is 200000000, and the uncertainty of each dosage unit value result of calculation is less than 1%.
The electron beam that test and analog computation have obtained three kinds of electron energies along the dosage distribution curve of optics die body depth direction as shown in Figure 3.Wherein curve is measurement result, puts to be the analog computation result.
From Fig. 3, can draw range data as shown in table 2, as shown in table 2:
The range data of three kinds of electron beams of table 2
From the test and the Monte Carlo simulation data as can be seen, the extrapolated range of 1.03MeV electron beam in the optics die body is 1.27mm, the extrapolated range of 1.43MeV electron beam is 1.85mm, the extrapolated range of 1.73MeV electron beam is 2.45mm.At extrapolated range degree of depth place, dosage has decayed to below 10% of maximum dose.And dosage is reduced to be substantially 0 maximum range to be respectively: the 1.03MeV electronics is 1.65mm, and the 1.43MeV electronics is 2.4mm, and the 1.73MeV electronics is 3.05mm.
In the optical material depths, the depth dose distribution curve that Monte Carlo simulation calculates and the curve of measurement meet relatively goodly.
Step 5 is measured lens of star sensor thickness, obtains the anti-irradiation index of the responsive camera lens thickness of star correspondence in the inquiry of dosage distribution curve.
In sum, the lens of star sensor material of the present invention by testing out different-thickness is to the transmittance graph of electron beam, and the thickness of contrast lens of star sensor can obtain lens of star sensor to the attenuation coefficient of space particle radiation.Use the anti-irradiation indication test method of lens of star sensor of the present invention can measure the electron beam of different-energy fast and effectively along the dosage distribution curve of optics die body depth direction, for the anti-irradiation design of lens of star sensor provides test basis.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (2)

1. the anti-irradiation indication test method of a lens of star sensor is characterized in that, comprises following steps:
Step 1 is carried out dose calibration to colour developing film dosimeter (2) and is demarcated in the standard dose field, by the linear relationship between spectrophotometer measurement irradiation dose and the optical density changing value, thereby optical density is converted to the absorbing agent value;
Step 2, the lens of star sensor material is made a pair of wedge shape optics die body (1), its cross section is right-angle triangle, and this is staggered relatively to optics die body inclined-plane, and the colour developing film dosimeter of demarcating through dose calibration (2) is set between two optics die body (1) inclined-planes;
Step 3, optics die body (1) degree of depth is the right angle length of side of its cross section right-angle triangle, the cross section hypotenuse appearance of colour developing film dosimeter (2) length and optics die body (1) etc., utilize right-angle triangle three frontier junctures system, set up the tangent relationship between colour developing film dosimeter (2) length and optics die body (1) degree of depth, dosage is converted to dosage along the variation of the optics die body degree of depth along the variation of colour developing film dosimeter (2) length, thereby obtains the depth dose distribution curve of electron beam in optics die body (1);
Step 4 uses electron accelerator that optics die body (1) is irradiated to the integral dose of regulation, with the develop the color optical density changing value of film dosimeter (2) of spectrophotometer measurement, obtains the dosage distribution curve of lens of star sensor;
Step 5 is measured lens of star sensor thickness, obtains the anti-irradiation index of the responsive camera lens thickness of star correspondence in the inquiry of dosage distribution curve.
2. the anti-irradiation indication test method of lens of star sensor as claimed in claim 1 is characterized in that, electron accelerator preferred nominal electron energy scope 1~2MeV carries out irradiation in the vertical incidence mode to optics die body (1) in the described step 4.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107462240A (en) * 2017-08-28 2017-12-12 浙江大学 A kind of twin shaft interference star sensor device based on two-dimensional grating
CN110988957A (en) * 2019-12-24 2020-04-10 深圳大学 Measuring device and method for depth dose distribution based on proton irradiation source
CN111158041A (en) * 2020-01-10 2020-05-15 深圳大学 Portable calibration60Device and method for Co gamma ray three-dimensional dose field
CN112504635A (en) * 2020-11-18 2021-03-16 北京控制工程研究所 Optical wedge type space high-precision pointing measuring instrument calibration device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102901516A (en) * 2012-09-29 2013-01-30 航天恒星科技有限公司 Multispectral image radiation correction method based on absolute radiometric calibration
CN202916206U (en) * 2012-11-27 2013-05-01 王菲 Device for measuring and evaluating laser-induced damage resisting capacity of film

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102901516A (en) * 2012-09-29 2013-01-30 航天恒星科技有限公司 Multispectral image radiation correction method based on absolute radiometric calibration
CN202916206U (en) * 2012-11-27 2013-05-01 王菲 Device for measuring and evaluating laser-induced damage resisting capacity of film

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Title
郭永飞: "遥感CCD相机的抗辐射策略研究", 《中国光学与应用光学》 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107462240A (en) * 2017-08-28 2017-12-12 浙江大学 A kind of twin shaft interference star sensor device based on two-dimensional grating
CN107462240B (en) * 2017-08-28 2023-08-11 浙江大学 Double-shaft interference star sensor device based on two-dimensional grating
CN110988957A (en) * 2019-12-24 2020-04-10 深圳大学 Measuring device and method for depth dose distribution based on proton irradiation source
CN110988957B (en) * 2019-12-24 2023-06-02 深圳大学 Measuring device and method for depth dose distribution based on proton irradiation source
CN111158041A (en) * 2020-01-10 2020-05-15 深圳大学 Portable calibration60Device and method for Co gamma ray three-dimensional dose field
CN111158041B (en) * 2020-01-10 2022-03-08 深圳大学 Portable calibration60Device and method for Co gamma ray three-dimensional dose field
CN112504635A (en) * 2020-11-18 2021-03-16 北京控制工程研究所 Optical wedge type space high-precision pointing measuring instrument calibration device
CN112504635B (en) * 2020-11-18 2021-10-01 北京控制工程研究所 Optical wedge type space high-precision pointing measuring instrument calibration device

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Patentee before: Shanghai Xinyue Instrument Factory