CN103329273A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
CN103329273A
CN103329273A CN2011800648983A CN201180064898A CN103329273A CN 103329273 A CN103329273 A CN 103329273A CN 2011800648983 A CN2011800648983 A CN 2011800648983A CN 201180064898 A CN201180064898 A CN 201180064898A CN 103329273 A CN103329273 A CN 103329273A
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China
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semiconductor layer
semiconductor device
film
schottky
layer
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CN2011800648983A
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CN103329273B (en
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美浓浦优一
冈本直哉
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Fujitsu Ltd
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Fujitsu Ltd
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  • Engineering & Computer Science (AREA)
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Abstract

The disclosed semiconductor device is provided with a semiconductor layer (1) and a Schottky electrode (2) which is joined to the semiconductor layer (1) via a Schottky junction. The Schottky electrode (2) includes a metal part (2a) which contains a metal which is joined to the semiconductor layer (1) via a Schottky junction, and a nitride part (2b) which, formed around the metal part (2a), contains nitrides of the aforementioned metal and is joined to the semiconductor layer (1) via a Schottky junction.

Description

Semiconductor device and manufacture method thereof
Technical field
The present invention relates to semiconductor device and manufacture method thereof.
Background technology
But be expected to material as the device of high withstand voltage and high speed motion as the GaN of the compound semiconductor of greater band gap because of its material behavior, special expectation is applied to as carrying out the power supply apparatus of high withstand voltage and big electric current action.In addition, Schottky barrier diode (SBD) is compared on high-speed response and low-loss this point more good with the pn diode.Therefore, the SBD(GaN base SBD of GaN has been used in expectation) as follow-on low consumption power supply apparatus.
In order to reduce the loss of GaN base SBD, the conducting voltage that reduces SBD is very important.In addition, in order to reduce conducting voltage, use the little metal of work function effective at anode electrode.This is that the threshold voltage of forward reduces because the schottky barrier height at the interface of metal and compound semiconductor reduces.On the other hand, if use the little metal of work function, the depletion layer attenuation that then produces when applying reverse biased is so be difficult to obtain enough by withstand voltage.Like this, the low conducting voltage and high by withstand voltage that is difficult to get both.
About low conducting voltage and high by withstand voltage getting both, proposed to make up the lower metal of schottky barrier height and the structure of the anode electrode of the metal that the schottky barrier height that forms is higher around it.Yet, in order to form the anode electrode of such structure, need after the metal that has formed a side, carry out film forming and the portrayal pattern of the opposing party's metal.Therefore, the surface of compound semiconductor to clean employed soup etc. limited, be difficult to carry out fully the cleaning of interface of metal and compound semiconductor.Therefore, cause Schottky characteristic to reduce, perhaps the rate of finished products of device reduces.
Patent documentation 1: TOHKEMY 2004-31896 communique
Summary of the invention
The object of the present invention is to provide the low conducting voltage and high by withstand voltage semiconductor device and manufacture method thereof that to get both.
The Schottky electrode that in a mode of semiconductor device, is provided with semiconductor layer and engages with above-mentioned semiconductor layer Schottky.Include at above-mentioned Schottky electrode: metal part, it comprises the metal that engages with above-mentioned semiconductor layer Schottky; With nitride portion, its be formed at above-mentioned metal part around, comprise the nitride of above-mentioned metal, and engage with above-mentioned semiconductor layer Schottky.
In a mode of supply unit, be provided with semiconductor device.In above-mentioned semiconductor device, the Schottky electrode that is provided with semiconductor layer and engages with above-mentioned semiconductor layer Schottky.Include at above-mentioned Schottky electrode: metal part, it comprises the metal that engages with above-mentioned semiconductor layer Schottky; With nitride portion, its be formed at above-mentioned metal part around, comprise the nitride of above-mentioned metal, and engage with above-mentioned semiconductor layer Schottky.
In a mode of the manufacture method of semiconductor device, form the metal film that engages with the semiconductor layer Schottky, and with the periphery nitrogenize of above-mentioned metal film, formed the metal part that engages with above-mentioned semiconductor layer Schottky by above-mentioned metal film; Be positioned at above-mentioned metal part around, and the nitride portion that engages with above-mentioned semiconductor layer Schottky.
According to above-mentioned semiconductor device etc., can reduce conducting voltage by the metal part that Schottky electrode comprises, and can improve by withstand voltage by nitride portion.
Description of drawings
Figure 1A is the vertical view of structure of the semiconductor device of expression first execution mode.
Figure 1B is the cutaway view of the I-I line in Figure 1A.
Fig. 2 A is the figure of relation of the conduction band of expression metal film and semiconductor layer.
Fig. 2 B is the figure of relation of the conduction band of expression nitride film and semiconductor layer.
Fig. 3 A is the cutaway view of structure of the semiconductor device of expression second execution mode.
Fig. 3 B is the figure of relation of the conduction band of expression nitride film and semiconductor layer.
Fig. 4 is the cutaway view of structure of the semiconductor device of expression the 3rd execution mode.
Fig. 5 A is the cutaway view of the method for the expression semiconductor device of making the 3rd execution mode.
Fig. 5 B is the then cutaway view of the method for Fig. 5 A manufacturing semiconductor device of expression.
Fig. 5 C is the then cutaway view of the method for Fig. 5 B manufacturing semiconductor device of expression.
Fig. 5 D is the then cutaway view of the method for Fig. 5 C manufacturing semiconductor device of expression.
Fig. 5 E is the then cutaway view of the method for Fig. 5 D manufacturing semiconductor device of expression.
Fig. 5 F is the then cutaway view of the method for Fig. 5 E manufacturing semiconductor device of expression.
Fig. 6 A is the cutaway view of the method for the expression semiconductor device of making the 4th execution mode.
Fig. 6 B is the then cutaway view of the method for Fig. 6 A manufacturing semiconductor device of expression.
Fig. 6 C is the then cutaway view of the method for Fig. 6 B manufacturing semiconductor device of expression.
Fig. 7 A is the cutaway view of the method for the expression semiconductor device of making the 5th execution mode.
Fig. 7 B is the then cutaway view of the method for Fig. 7 A manufacturing semiconductor device of expression.
Fig. 7 C is the then cutaway view of the method for Fig. 7 B manufacturing semiconductor device of expression.
Fig. 7 D is the then cutaway view of the method for Fig. 7 C manufacturing semiconductor device of expression.
Fig. 7 E is the then cutaway view of the method for Fig. 7 D manufacturing semiconductor device of expression.
Fig. 7 F is the then cutaway view of the method for Fig. 7 E manufacturing semiconductor device of expression.
Fig. 7 G is the then cutaway view of the method for Fig. 7 F manufacturing semiconductor device of expression.
Fig. 7 H is the then cutaway view of the method for Fig. 7 G manufacturing semiconductor device of expression.
Fig. 7 I is the then cutaway view of the method for Fig. 7 H manufacturing semiconductor device of expression.
Fig. 7 J is the then cutaway view of the method for Fig. 7 I manufacturing semiconductor device of expression.
Fig. 7 K is the then cutaway view of the method for Fig. 7 J manufacturing semiconductor device of expression.
Fig. 7 L is the then cutaway view of the method for Fig. 7 K manufacturing semiconductor device of expression.
Fig. 8 A is the figure of the layout of expression electrode.
Fig. 8 B is the figure of the layout of expression wiring.
Fig. 9 is the figure of the variation of expression layout.
Figure 10 is the figure that expression comprises the SBD assembly of GaN base SBD.
Figure 11 is the figure that expression comprises the pfc circuit of SBD assembly shown in Figure 10.
Figure 12 is the figure that expression comprises the server power supply of pfc circuit shown in Figure 11.
Embodiment
Below, with reference to accompanying drawing execution mode is specifically described.
(first execution mode)
At first, first execution mode is described.Figure 1A is the vertical view of structure of the semiconductor device (Schottky barrier diode) of expression first execution mode, and Figure 1B is the cutaway view of the I-I line in Figure 1A.
In the first embodiment, shown in Figure 1A and Figure 1B, be formed with Schottky electrode 2 at semiconductor layer 1.In addition, be formed with Ohmic electrode 3 at the back side of semiconductor layer 1.Include metal film 2a in Schottky electrode 2, it comprises the metal that engages with semiconductor layer 1 Schottky; And nitride film 2b, its be formed at metal film 2a around, engage with semiconductor layer 1 Schottky.The nitride that in nitride film 2b, includes the metal that metal film 2a comprises.Namely, in nitride film 2b, include the material that comprises with metal film 2a and compare the low material of work function.
In first execution mode that constitutes like this, the difference that between metal film 2a and nitride film 2b, has work function, so shown in Fig. 2 A and Fig. 2 B, the schottky barrier height between nitride film 2b and the semiconductor layer 1 is than the schottky barrier height height between metal film 2a and the semiconductor layer 1.Therefore, if apply forward bias, then between metal film 2a and semiconductor layer 1, than between nitride film 2b and semiconductor layer 1, flowing through electric current earlier.Therefore, the work function of metal film 2a is more low, and the threshold voltage of forward is more low and conducting voltage is more low.In addition, if apply reverse biased, then depletion layer 1 significantly diffusion from nitride film 2b to semiconductor layer produces pinch off.Therefore, even under the lower situation of the work function of metal film 2a, also can access enough by withstand voltage.Namely, according to first execution mode, the low conducting voltage that can get both and high by withstand voltage.In addition, nitride film 2b can be by for example forming with the nitrogenize of metal film 2a identical materials, so can avoid the reduction of the spatter property under the situation of two kinds of metals of picture combination.Therefore, also can guarantee higher reliability.
In addition, the metal film 2a in the Schottky electrode 2 and each ratio of nitride film 2b are not particularly limited, but preferred when overlooking the area of metal film 2a bigger than the area of nitride film 2b.
(second execution mode)
Next, second execution mode is described.Fig. 3 A is the cutaway view of structure of the semiconductor device (Schottky barrier diode) of expression second execution mode, and the section of the I-I line in Figure 1A is shown.
In second execution mode, shown in Fig. 2 A, be formed with high resistant zone 4 at semiconductor layer 1 with nitride film 2b engaging portion.The resistance ratio semiconductor layer 1 in high resistant zone 4 and resistance height metal film 2a engaging portion.Other formation is identical with first execution mode.
In second execution mode that constitutes like this, there is high resistant zone 4, so the diffusion of the depletion layer under the situation that has applied reverse biased is bigger.Therefore, shown in Fig. 3 B, even schottky barrier height and first execution mode are same degree, the variation of the conduction band in high resistant zone 4 and the semiconductor layer 1 is slower than the variation (dotted line among Fig. 3 B) of the conduction band in the semiconductor layer 1 of first execution mode, and can access higher end withstand voltage.
(the 3rd execution mode)
Next, the 3rd execution mode is described.Fig. 4 is the cutaway view of structure of the semiconductor device (Schottky barrier diode) of expression the 3rd execution mode.
In the 3rd execution mode, as shown in Figure 4, be formed with the GaN layer 11b of n type at the GaN of n type substrate 11a.In GaN substrate 11a, for example mix 5 * 10 as n type impurity 17Cm -3 Si.In GaN layer 11b, for example mix 1 * 10 as n type impurity 16Cm -3Si.The thickness of GaN layer 11b for example is about 1 μ m.GaN substrate 11a and GaN layer 11b are included in the semiconductor layer 11.
11b is formed with passivating film 15 at the GaN layer.Be formed with the peristome 15a that anode electrode is used at passivating film 15.For example being formed with thickness as passivating film 15 is silicon nitride film about 400nm.
In peristome 15a, be formed with anode electrode 12(Schottky electrode).In anode electrode 12, include the Ti film 12a that engages with GaN layer 11b Schottky, and be formed at Ti film 12a around, and the TiN film 12b that engages with GaN layer 11b Schottky.The work function of TiN film 12b is lower than the work function of Ti film 12a.The thickness of Ti film 12a and TiN film 12b is about 1 μ m.The end of TiN film 12b rides on the passivating film 15.
In addition, be formed with cathode electrode 13(Ohmic electrode at the back side of GaN substrate 11a).For example being formed with thickness as cathode electrode 13 is that Ti film and thickness about 10nm is the stacked film of the Al film about 300nm.
And, be formed with high resistant zone 14 at GaN layer 11b with TiN film 12b engaging portion.Resistance ratio GaN layer 11b and resistance height Ti film 12a engaging portion in high resistant zone 14.
In the 3rd execution mode that constitutes like this, the schottky barrier height between TiN film 12b and the semiconductor layer 11 is than the schottky barrier height height between Ti film 12a and the semiconductor layer 11.Therefore, if apply forward bias, then between Ti film 12a and semiconductor layer 11, than between TiN film 12b and semiconductor layer 11, flowing through electric current earlier.Therefore, can reduce conducting voltage.In addition, if apply reverse biased, then since with the cooperative effect in high resistant zone 14, depletion layer spreads to semiconductor layer 11 from TiN film 12b very bigly.Therefore, can access enough by withstand voltage.Namely, according to the 3rd execution mode, the low conducting voltage that can get both and high by withstand voltage.
Next, the method to the semiconductor device of making the 3rd execution mode describes.Fig. 5 A～Fig. 5 F is the cutaway view of method of representing to make the semiconductor device of the 3rd execution mode according to process sequence.
At first, shown in Fig. 5 A, form the GaN layer 11b of n type at the GaN of n type substrate 11a.For example utilize organic metal vapor phase growth (MOCVD:metal-organic chemical vapor deposition) method, epitaxial growth GaN layer 11b.
Next, shown in Fig. 5 B, form cathode electrode 13 at the back side of GaN substrate 11a.In the formation of cathode electrode 13, for example utilize vapour deposition method, form the Ti film at the back side of GaN substrate 11a, form the Al film at the Ti film, and carry out the RTA(rapid thermal annealing about 700 ℃: rapid thermal annealing).Establish ohmic contact by this RTA.
Afterwards, shown in Fig. 5 C, form passivating film 15 at GaN layer 11b, and form the peristome 15a that anode electrode is used at passivating film 15.As passivating film 15, for example utilize the CVD method to form silicon nitride film.In the formation of peristome 15a, for example having used fluorine is the dry-etching of gas.
Then, shown in Fig. 5 D, the formation edge part rides over the Ti film 10 on the passivating film 15 in peristome 15a.Ti film 10 for example can utilize the method for peeling off to form.That is, form the mask against corrosion that makes the regional opening that forms Ti film 10, and carry out the evaporation of Ti film, if mask against corrosion is removed with the Ti film on it, then can obtain Ti film 10 in desirable zone.
Next, shown in Fig. 5 E, form for example mask 101 of the periphery opening of Ti film 10 of the predetermined zone make the predetermined zone that forms TiN film 12b and to form high resistant zone 14.For example form the mask of photoresist as mask 101.Afterwards, nitrogen ion is injected into Ti film 10 and GaN layer 11b.The condition of injecting as this ion preferably adopts the peak value that injects the degree of depth to appear at the interface of Ti film 10 and GaN layer 11b or than on the dark slightly position, this interface.In addition, the peak value that also can inject the degree of depth ion that appears at Ti film 10 peak value that injects and inject the degree of depth appears at two secondary ions that the ion of GaN layer 11b injects and injects.The condition that such ion injects for example can change by adjusting acceleration energy.
Shown in Fig. 5 F, the ion by such nitrogen injects, and the part that has been injected into nitrogen ion of Ti film 10 becomes TiN film 12b, and the part of its inboard is as Ti film 12a and remaining.In addition, the resistance of the part that has been injected into nitrogen ion of GaN layer 11b rises, and forms high resistant zone 14 herein.And, if remove mask 101, then obtain structure shown in Figure 4.
In this manufacture method, the nitrogenize by Ti film 10 forms TiN film 12b, and with the remainder of Ti film 10 as Ti film 12a.Therefore, after the formation of Ti film 10, need not to form metal film, if before the formation of Ti film 10, clean processing, then can access sufficient spatter property.Therefore, also can guarantee higher reliability.
In addition, when the formation in the nitrogenize of Ti film 10 and high resistant zone 14, also can replace ion to inject and carry out plasma treatment.Namely, also can carry out the part that the peristome from mask 101 exposes is exposed to the open air at N 2Processing under the plasma.
In addition, also can replace Ti film and TiN film and use Ta film and TaN film.In addition, the carrier concentration of GaN substrate 11a and GaN layer 11b also has the thickness etc. of GaN layer 11b also can suitably change by characteristics such as withstand voltage and conducting resistance according to Schottky barrier diode is needed.Also can use the layer that is laminated with a plurality of GaN base semiconductors (for example GaN and AlGaN) film as GaN layer 11b.
(the 4th execution mode)
Next, the 4th execution mode is described.In the 4th execution mode, connect a plurality of SBD in parallel.Fig. 6 A～Fig. 6 C is the cutaway view of method of representing to make the semiconductor device of the 4th execution mode according to the order of operation.
At first, identical with the 3rd execution mode as shown in Figure 6A, at the GaN layer 21b of the GaN of n type substrate 21a formation n type.GaN substrate 21a and GaN layer 21b are contained in the semiconductor layer 21.Next, identical with the 3rd execution mode, form cathode electrode 23 at the back side of GaN substrate 21a.Afterwards, identical with the 3rd execution mode, form passivating film 25 at GaN layer 21b, form the peristome 25a that a plurality of anode electrodes are used at passivating film 25.Then, identical with the 3rd execution mode, the formation edge part rides over the Ti film on the passivating film 25 in each peristome 25a, and the ion of exercising the nitrogen of having used mask of going forward side by side injects.Its result forms and to possess the Ti film 22a that engages with GaN layer 21b Schottky, and be formed on Ti film 22a around, and the anode electrode 22 of the TiN film 22b that engages with GaN layer 21b Schottky.In addition, form the high resistant zone 24 high with Ti film 22a engaging portion resistance than GaN layer 21b at GaN layer 21b with TiN film 22b engaging portion.
Next, shown in Fig. 6 B, expose Ti film 22a and TiN film 22b, form the polyimide film 26 that covers passivating film 25.
Afterwards, shown in Fig. 6 C, form the common anode wiring 27 that connects each anode electrode 22 at polyimide film 26.For example forming thickness as anode wiring 27 is Al film about 2 μ m.
At such SBD(semiconductor device) installation in, for example, utilize Ag paste etc. that cathode electrode 23 chips (die) are adhered on the lead frame, via Al line etc. anode wiring 27 is connected with lead frame and gets final product.In the 3rd execution mode, if form the anode wiring that is connected with anode electrode 12, also can carry out identical installation.
(the 5th execution mode)
Next, the 5th execution mode is described.In the 5th execution mode, GaN base SBD and GaN based high electron mobility transistor (HEMT:high electron mobility transistor) are formed on the identical substrate.Fig. 7 A～Fig. 7 L is the cutaway view of method of representing to make the semiconductor device of the 5th execution mode according to the order of operation.
At first, shown in Fig. 7 A, for example utilize mocvd method etc. to form resilient coating 42, the i-GaN layer 43 of non-doping and the n-AlGaN layers 31 of n type at substrate 41.Can use SiC substrate, half insulation Si substrate, sapphire substrate of half insulation for example etc. as substrate 41.For example forming thickness as resilient coating 42 is GaN layer or AlGaN layer about 100nm.For example, the thickness of i-GaN layer 43 is about 2 μ m, and the thickness of n-AlGaN layer 31 is about 20nm.
Next, shown in Fig. 7 B, form the element separated region 44 of dividing the predetermined zone 51 that forms the GaN based hemts and forming the predetermined zone 52 of GaN base SBD.In the formation of element separated region 44, for example inject the Ar ion deeply than the heterojunction boundary of i-GaN layer 43 and n-AlGaN layer 31 and get final product.Inject to disconnect the two-dimensional electron gas (2DEG) of the skin section that is present in i-GaN layer 43 by such ion.
Afterwards, shown in Fig. 7 C, form passivating films 35 at n-AlGaN layer 31, form a plurality of peristome 35d that a plurality of peristome 35s that a plurality of peristome 35g, source electrode that a plurality of peristome 35c, gate electrode that a plurality of peristome 35a, cathode electrode that anode electrodes use use use use and drain electrode are used at passivating film 35.For example utilize the CVD method to form the silicon nitride film of thickness about for 400nm as passivating film 35.In the formation of peristome 35a, 35c, 35g, 35s and 35d, for example using fluorine is the dry-etching of gas.
Then, shown in Fig. 7 D, in peristome 35c, form cathode electrode 33, in peristome 35s, form source electrode 45s, in peristome 35d, form drain electrode 45d.Cathode electrode 33, source electrode 45s and drain electrode 45d for example can utilize the method for peeling off to form.Namely, formation makes the mask against corrosion of the regional opening that forms cathode electrode 33, source electrode 45s and drain electrode 45d, the Ti film and the thickness that carry out thickness for example and be about 10nm are the evaporation of the Al film about 300nm, and remove mask against corrosion with the Ti film on it and Al film.And, carry out the RTA about 700 ℃.Establish the ohmic contact of cathode electrode 33, source electrode 45s and drain electrode 45d by this RTA.
Then, shown in Fig. 7 E, in peristome 35g, form gate electrode 45g.Gate electrode 45g for example can form by peeling off method.Namely form the mask against corrosion make the regional opening that forms gate electrode 45g, the Ni film and the thickness that carry out thickness for example and be about 10nm are the evaporation of the Au film about 200nm, remove mask against corrosion with the Ni film on it and Au film.
Next, shown in Fig. 7 F, the formation edge part rides over the Ti film 40 on the passivating film 35 in peristome 35a.Ti film 40 for example can form by peeling off method.That is, if form the mask against corrosion that makes the regional opening that forms Ti film 40, carry out the evaporation of Ti film, remove mask against corrosion with the Ti film on it, then can obtain Ti film 40 in desirable zone.
Afterwards, shown in Fig. 7 G, form near the mask 111 of the opening of periphery that makes Ti film 40.For example form the mask of photoresist as mask 111.Then, identical with the 3rd execution mode, to Ti film 40 and n-AlGaN layer 31 nitrogen injection ion.
Ion by such nitrogen injects, and shown in Fig. 7 H, the part that has been injected into nitrogen ion of Ti film 40 becomes TiN film 32b, and the part of its inboard is as Ti film 32a and remaining.Ti film 32a and TiN film 32b are contained in anode electrode 32.In addition, the resistance of the part that has been injected into nitrogen ion of n-AlGaN layer 31 rises, and forms high resistant zone 34 herein.
Next, shown in Fig. 7 I, form Au Seed Layer 46 by sputtering method at whole.Then, form mask (for example mask against corrosion) 112 in Au Seed Layer 46, this mask 112 is formed with the peristome of the regulation of exposing the part on anode electrode 32, cathode electrode 33, gate electrode 45g, source electrode 45s and the drain electrode 45d.Next, forming thickness by galvanoplastic is Au film 47 about 10 μ m.
Afterwards, shown in Fig. 7 J, remove mask 112, utilize ion milling method etc. to remove the Au Seed Layer of exposing from Au film 47 46.Its result, the relaying wiring layer 48a that obtains being connected with anode electrode 32, jointly connect the negative electrode wiring 48c of each cathode electrode 33, connect the grid wiring 48g of each gate electrode 45g, the relaying wiring layer 48s that is connected with source electrode 45s and the drain electrode wiring 48d that connects each drain electrode 45d jointly jointly.
Then, shown in Fig. 7 K, expose relaying wiring layer 48a and relaying wiring layer 48s, form the photosensitive polyimide film 36 of covered cathode wiring 48c, grid wiring 48g and drain electrode wiring 48d at passivating film 35.
Next, shown in Fig. 7 L, form the anode wiring 37a of common each relaying wiring layer 48a of connection and the source wiring 37s that connects each relaying wiring layer 48s jointly.In the formation of anode wiring 37a and source wiring 37s, for example utilize sputtering method to form the Au Seed Layer at whole, the mask of the predetermined zone that forms anode wiring 37a and source wiring 37s is exposed in formation, mask against corrosion for example, utilizing galvanoplastic to form thickness is Au film about 10 μ m.And, remove mask, utilize ion milling method etc. to remove the Au Seed Layer of exposing from the Au film.
Like this, can access GaN base SBD and GaN based hemts and be formed on semiconductor device on the identical substrate.In this GaN based hemts, i-GaN layer 43 plays a role as electron transfer layer, and n-AlGaN layer 31 plays a role as electron supply layer.
In Fig. 8 A, an example of the layout of expression anode electrode 32, cathode electrode 33, gate electrode 45g, source electrode 45s and drain electrode 45d, in Fig. 8 B, an example of the layout of expression anode wiring 37a, negative electrode wiring 48c, grid wiring 48g, source wiring 37s and drain electrode wiring 48d.
In addition, as shown in Figure 9, the anode wiring 37a of GaN base SBD and anode electrode 32 and negative electrode wiring 48c and cathode electrode 33 can layout be pectination also.
In addition, arrange two-dimensionally each electrode of the GaN base SBD that each electrode of GaN based hemts also can be in Fig. 8 A.In addition, also can form through hole at substrate, via this through hole the drain electrode wiring of GaN based hemts be drawn the back side of getting back to substrate.Equally, also the negative electrode wiring of GaN base SBD can be drawn and get back to the back side.And, as the material of wiring, also can use the Al that compares cheapness with Au.
In addition, in first execution mode～the 4th execution mode, also can as the 5th execution mode, cathode electrode be arranged on the face side of substrate.
(the 6th execution mode)
Next, the 6th execution mode is described.The 6th execution mode is the devices such as server power supply that possess GaN base SBD.Figure 10 is the figure that expression comprises the SBD assembly of GaN base SBD.Figure 11 is the PFC(power factor correction that expression comprises SBD assembly shown in Figure 10: the power factor correction) figure of circuit.Figure 12 is the figure that expression comprises the server power supply of pfc circuit shown in Figure 11.
As shown in figure 10, in the SBD assembly 80 that comprises GaN base SBD70, mounting materials 82 such as the cathode electrode use scolding tin of GaN base SBD70 are fixed on the assembly electrode platform 81.Assembly electrode platform 81 is connected with lead 81a.In addition, the anode electrode of GaN base SBD70 is connected with other lead 83 by having used the welding of Al line 84.And, utilize casting film resin 85 with they sealings.
As shown in figure 11, in the pfc circuit 90 that comprises SBD assembly 80, the lead 83 that is connected at the anode electrode with GaN base SBD70 is connected with terminal of choke 93 and a terminal of switch element 94, at a terminal of the lead 81a connection capacitor 95 that is connected with cathode electrode.Another terminal at choke 93 connects capacitor 92.And, another terminal ground connection of another terminal of capacitor 92, another terminal of switch element 94 and capacitor 95.In addition, capacitor 92 is connected with AC power (AC) via diode bridge 91.In addition, between the two-terminal of capacitor 95, take out DC power supply (DC).
And as shown in figure 12, pfc circuit 90 is arranged on server power supply 100 grades and is used.
Identical with such server power supply 100, also can make up the higher supply unit of reliability, for example DC-DC transducer, AC-DC transducer etc.
In addition, in these execution modes, replace all or part of the GaN layer of Schottky barrier diode also can use the AlGaN layer to wait other nitride semiconductor layer.
The industrial possibility of utilizing
According to these semiconductor devices etc., the metal part of utilizing Schottky electrode to comprise can reduce conducting voltage, utilizes nitride portion can improve by withstand voltage.

Claims (20)

1. semiconductor device is characterized in that having:
Semiconductor layer; With
The Schottky electrode that engages with described semiconductor layer Schottky,
Described Schottky electrode has:
Metal part, it comprises the metal that engages with described semiconductor layer Schottky; With
Nitride portion, its be formed at described metal part around, comprise the nitride of described metal, and engage with described semiconductor layer Schottky.
2. semiconductor device according to claim 1 is characterized in that,
The resistance height of the described metal part institute engaging portion of the described semiconductor layer of resistance ratio of institute of the described nitride portion engaging portion of described semiconductor layer.
3. semiconductor device according to claim 1 is characterized in that,
The metal that described metal part comprises is Ti or Ta.
4. semiconductor device according to claim 1 is characterized in that,
Described semiconductor layer comprises nitride-based semiconductor.
5. semiconductor device according to claim 1 is characterized in that,
Described semiconductor layer has:
Electron transfer layer and
Be formed at the electron supply layer of described electron transfer layer top.
6. semiconductor device according to claim 1 is characterized in that,
Above substrate, be provided with a plurality of described Schottky electrodes,
Has the wiring that connects a plurality of described Schottky electrodes.
7. a supply unit is characterized in that,
Have semiconductor device,
Described semiconductor device has:
Semiconductor layer; With
The Schottky electrode that engages with described semiconductor layer Schottky,
Described Schottky electrode has:
Metal part, it comprises the metal that engages with described semiconductor layer Schottky; With
Nitride portion, its be formed at described metal part around, comprise the nitride of described metal, and engage with described semiconductor layer Schottky.
8. supply unit according to claim 7 is characterized in that,
The resistance height of the described metal part institute engaging portion of the described semiconductor layer of resistance ratio of institute of the described nitride portion engaging portion of described semiconductor layer.
9. supply unit according to claim 7 is characterized in that,
The metal that described metal part comprises is Ti or Ta.
10. supply unit according to claim 7 is characterized in that,
Described semiconductor layer comprises nitride-based semiconductor.
11. supply unit according to claim 7 is characterized in that,
Described semiconductor layer has:
Electron transfer layer; With
Be formed at the electron supply layer of described electron transfer layer top.
12. supply unit according to claim 7 is characterized in that,
Above substrate, be provided with a plurality of described Schottky electrodes,
Has the wiring that connects a plurality of described Schottky electrodes.
13. the manufacture method of a semiconductor device is characterized in that, has:
Form the operation of the metal film that engages with the semiconductor layer Schottky; With
With the periphery nitrogenize of described metal film, by described metal film form the metal part that engages with described semiconductor layer Schottky and be positioned at described metal part around and the operation of the nitride portion that engages with described semiconductor layer Schottky.
14. the manufacture method of semiconductor device according to claim 13 is characterized in that,
The operation that forms described metal part and described nitride portion has carries out operation that the ion at the nitrogen of the periphery of described metal film injects or exposes the periphery of described metal film to the open air under nitrogen gas plasma operation.
15. the manufacture method of semiconductor device according to claim 13 is characterized in that,
Have the resistance of institute of the described nitride portion engaging portion of described semiconductor layer is brought up to the high operation of resistance than the metal part institute engaging portion of described semiconductor layer.
16. the manufacture method of semiconductor device according to claim 15 is characterized in that,
The operation and parallel the carrying out of operation that forms described metal part and described nitride portion of resistance of institute of the described nitride portion engaging portion of described semiconductor layer will be improved.
17. the manufacture method of semiconductor device according to claim 13 is characterized in that,
Described metal film comprises Ti or Ta.
18. the manufacture method of semiconductor device according to claim 13 is characterized in that,
Described semiconductor layer comprises nitride-based semiconductor.
19. the manufacture method of semiconductor device according to claim 13 is characterized in that,
Described semiconductor layer has electron transfer layer and is formed at the electron supply layer of described electron transfer layer top.
20. the manufacture method of semiconductor device according to claim 13 is characterized in that,
In the operation that forms described metal film, above substrate, form a plurality of metal films,
Have and form the operation that connects by the wiring of the film formed a plurality of described metal part of described a plurality of metals and nitride portion.
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