CN103326670B - Output-stage circuit - Google Patents
Output-stage circuit Download PDFInfo
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- CN103326670B CN103326670B CN201210079274.5A CN201210079274A CN103326670B CN 103326670 B CN103326670 B CN 103326670B CN 201210079274 A CN201210079274 A CN 201210079274A CN 103326670 B CN103326670 B CN 103326670B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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Abstract
The invention discloses a kind of output-stage circuit.This output-stage circuit includes a first transistor, including a first end, is coupled to a first end point, one second end, is coupled to an outfan；One the 3rd end, is coupled to an input, for receiving an input voltage；And one the 4th end, it is coupled to one first power end, for receiving a first voltage；One transistor seconds, including a first end, is coupled to one second end points, one second end, is coupled to this outfan, one the 3rd end, is coupled to this input, for receiving this input voltage；And one the 4th end, it is coupled to a ground terminal；And a current source, it is coupled to this outfan, for providing a steady-state current.
Description
Technical field
The present invention relates to a kind of output-stage circuit, more particularly, to one kind can eliminate substrate effect and be applied to half voltage source
The output-stage circuit of supply.
Background technology
Amplifier (Operational Amplifier) is conventional basic circuit assembly in Analogous Integrated Electronic Circuits.In order to
Reduce power consumption, known amplifier circuit often can reduce power by using the power supply supply of by stages in application and disappear
Consumption.For example, refer to Fig. 1, Fig. 1 is the schematic diagram of the amplifier circuit 10 being known to use by stages power supply supply.As
Shown in Fig. 1, amplifier circuit 10 includes an an amplifier OP1 and amplifier circuit OP2.Amplifier OP1 passes through one first power supply
End PW1 receives first voltage VDD, and receives a second voltage VDD H by a second source end PW2.Amplifier OP2 leads to
Cross second source end PW2 and receive second voltage VDD H, and ground terminal GND is coupled to by one the 3rd power end PW3.In this feelings
Under condition, if the current potential of second voltage VDD H is the half of the current potential of first voltage VDD that is to say, that amplifier OP1 and amplification
Device OP2 is applied to half voltage source supply, and now, amplifier circuit 10 is half pressure operational amplifier (half supply voltage
OP)., between VDD to 1/2VDD, the supply voltage of amplifier OP2 is between 1/2VDD extremely for the supply voltage of amplifier OP1
Between terminal potential.In the case, the output interval of amplifier OP1 will be between VDD to 1/2VDD, and amplifier OP2
Output interval will between 1/2VDD to ground terminal potential between, consequently, it is possible to the work(of amplifier circuit 10 will can be greatly reduced
Rate consumes.
Though however, the consumption of the amplifier circuit cpable of lowering power using the supply of by stages power supply, may thus produce
Raw substrate effect (body effect), leads to the problem that output-stage circuit cannot normally bias.For example, refer to Fig. 2,
Fig. 2 is the schematic diagram of the amplifier OP1 in Fig. 1.As shown in Fig. 2 amplifier OP1 includes an output-stage circuit 202.Output stage electricity
Road 202 is by an a transistor NOUT and transistor POUT, is formed with a totem pole form concatenation.Base due to transistor NOUT
Pole would generally connect the potential minimum to circuit, i.e. the current potential of ground terminal GND.And now between the power supply zones of amplifier OP1
It is between VDD to 1/2VDD, therefore, the source potential of transistor NOUT is 1/2VDD.In the case, will there is substrate
The situation of effect occurs, therefore the critical voltage of transistor NOUT (threshold voltage) will thus improve.For amplification
Be used in device OP1 providing high current to drive the output-stage circuit 202 of successive load for, once substrate effect is very serious
When, it will lead to the grid potential of transistor NOUT to improve, and transistor NB1 is closed, now when output-stage circuit 202
When output current is limited in the situation of minimum electric current by transistor NOUT, it will lead to amplifier OP1 cannot be operating normally.
Similarly, refer to Fig. 3, Fig. 3 is the schematic diagram of the amplifier OP2 in Fig. 1.Amplifier OP2, amplifier OP2 bag
Include an output-stage circuit 302.Output-stage circuit 302 is by an a transistor NOUT and transistor POUT, with a totem pole form
Concatenation forms.The maximum potential that would generally be connected to circuit due to the base stage of transistor POUT, i.e. the current potential of VDD.And now
It is that therefore, the source potential of transistor POUT is between 1/2VDD to ground terminal potential between the power supply zones of amplifier OP2
1/2VDD.In the case, the situation also having substrate effect occurs and so that the critical voltage of transistor POUT is improved, and works as substrate
When effect is very serious, the value of transistor POUT is that current potential will be reduced to and so that transistor PB1 is closed.Similarly amplifier OP2
Also can be operating normally.
In known technology, in order to solve to be applied to by stages power supply at once caused substrate effect it will usually make
There is provided independent p-type trap and independent N-type trap with particular process sequence, thus eliminating aforesaid substrate effect.However, using special
Different processing procedure will be greatly improved the manufacturing cost of integrated circuit, and this is undesirable result for IC designer.Cause
How this develops is not required to loaded down with trivial details Yu expensive processing procedure, can solve the side at once caused substrate effect for the by stages power supply again
Method, is the problem of current urgent need to resolve.
Content of the invention
Therefore, present invention generally provides a kind of output stage of eliminated substrate effect being applied between half power supply zones is electric
Road.
The present invention discloses a kind of output-stage circuit, including a first transistor, including a first end, is coupled to a first end
Point, one second end, it is coupled to an outfan, one the 3rd end, be coupled to an input, for receiving an input voltage, Yi Jiyi
4th end, is coupled to one first power end, for receiving a first voltage；One transistor seconds, including a first end, is coupled to
One second end points, one second end, it is coupled to this outfan；One the 3rd end, is coupled to this input, for receiving this input electricity
Pressure, and one the 4th end, are coupled to a ground terminal；And a current source, it is coupled to this outfan, for providing a steady-state current.
Here cooperation following schemes, the detailed description of embodiment and claims, by address other mesh of the present invention
Be described in detail in advantage after.
Brief description
Fig. 1 is the schematic diagram of the amplifier circuit being known to use by stages power supply supply.
Fig. 2 is the schematic diagram of the amplifier in Fig. 1.
Fig. 3 is the schematic diagram of another amplifier in Fig. 1.
Fig. 4 is the schematic diagram of the embodiment of the present invention one output-stage circuit.
Fig. 5 A and Fig. 5 B is the volt-ampere characteristic curve figure of the transistor of the embodiment of the present invention.
Fig. 6 is another schematic diagram of the embodiment of the present invention one output-stage circuit.
Wherein, description of reference numerals is as follows：
10 amplifier circuits
202nd, 302,40,60 output-stage circuit
400th, 402,600,602, NB1, NOUT, PB1, POUT transistor
404th, 604 current source
C1 first curve
C2 second curve
GND ground terminal
ID_P, ID_N, I_BIAS, ID electric current
IN input
OP1, OP2 amplifier
OUT outfan
PW1 first power end
PW2 second source end
PW3 the 3rd power end
VDD first voltage
VDD_H second voltage
VIN, VOUT voltage
Specific embodiment
Refer to Fig. 4, Fig. 4 is the schematic diagram of an output-stage circuit 40 of the embodiment of the present invention.Output-stage circuit 40 is should
An output-stage circuit for the amplifier OP1 shown in Fig. 1.Assume that output-stage circuit 40 is applied to half power supply supply, and supply
Between VDD to 1/2VDD, that is, second voltage VDD H is 1/2VDD to voltage.Output-stage circuit 40 is used for according to an input
One input voltage VIN of IN, produces output voltage VO UT and sends out output voltage VO UT by an outfan OUT.As Fig. 4
Shown, output-stage circuit 40 includes a transistor 400,402 and current source 404.Transistor 400,402 is with a totem pole form
Concatenation.Transistor 400 is a p-type metal-oxide half field effect transistor, for providing an electric current ID_P to outfan OUT.Transistor 402
It is a N-type metal-oxide half field effect transistor, for providing an electric current ID_N to outfan OUT.Transistor 400 and transistor 402
Source electrode is respectively connecting to the first power end PW1 and second source end PW2, to receive first voltage VDD and second voltage VDD_H,
Transistor 400 is respectively connecting to the first power end PW1 and ground terminal GND with the base stage of transistor 402.Current source 404 is coupled to defeated
Go out to hold OUT, and current source 404 is a constant current source, can be used to provide a steady-state current I_BIAS.
In circuit operation, the base stage due to transistor 402 have received different voltage swings respectively from source electrode, therefore brilliant
Body pipe 402 will occur substrate effect.Simultaneously as when input voltage VIN is a normal bias point, output-stage circuit 40 is usual
A steady-state current need to persistently be produced.In the case, transistor 402 is in not on-state, and required steady-state current will
The steady-state current I_BIAS being provided by current source 404 is realizing.When input voltage VIN rises, represent output voltage VO UT
Can decline, in the case, transistor 402 will be switched on, to provide extracurrent with the current potential of drop-down output voltage VO UT.
Consequently, it is possible to occur the transistor 402 of substrate effect can be equivalent to, with the combination of current source 404, the crystal that substrate effect no occurs
Pipe.That is, output-stage circuit 40 is in the case of the supply of half voltage power supply, by the association of transistor 402 and current source 404
Biconditional operation so that be originally subject to substrate effects output-stage circuit 40 can normally bias current, and instantaneous discharge and recharge row
For also can normally operate, there is the driving force not being biased against current limit.
Further, because the present invention adds current source 404 in the drain electrode end of transistor 402, and current source 404 is produced
Raw steady-state current I_BIAS may be substituted for the DC current in stable state for the transistor 402.Therefore, in stable state, transistor
402 is the state closed.When needing to load discharge, transistor 400 will rise with the grid potential of transistor 402, makes
Obtain transistor 402 and turn on to be discharged, consequently, it is possible to discharge current will not be limited to stable state produced by current source 404
Electric current I_BIAS, when external loading electric discharge reaches to a certain degree, the grid potential of transistor 402 can drop to original bias point
And allow transistor 402 to close.In other words, from behavior of discharging above, there is transistor 402 and the current source of substrate effect
404 combination can equivalent become the transistor of substrate effect no occurs.
Specifically, refer to Fig. 5 A and Fig. 5 B, wherein, Fig. 5 A is the volt-ampere characteristic curve figure of transistor 402.The
There is not characteristic curve during substrate effect for transistor 402 in one curve C1, the second curve C2 is that transistor 402 occurs substrate
Characteristic curve during effect.As shown in the first curve C1 in Fig. 5 A, when transistor 402 is in normal bias point, transistor
402 can produce a steady-state current I_BIAS, and the rising with input voltage VIN, and output current ID_N also can rise therewith.Separately
On the one hand, as shown in the second curve C2 in Fig. 5 A, when the transistor 402 that substrate effect occurs is in this normal bias point,
Because the critical voltage that substrate effect causes transistor 402 rises, the electric current of transistor 402 may be limited in a minimum electricity
Stream, causes the output-stage circuit 40 cannot normal work.Please continue to refer to Fig. 5 B, provide steady-state current I_ using current source 404
BIAS, to realize the required steady-state current I_BIAS providing of original transistor 402, is equivalent to up translate (i.e. curve C2
Carry current source 404), curve C2 can be equivalent to curve C1.Consequently, it is possible to the wink of the combination of current source 404 and transistor 402
When discharge and recharge behavior can be similar in appearance to the instantaneous discharge and recharge behavior of the transistor that substrate effect no occurs.That is, passing through electric current
Source 404, can normal bias plasma assisting output-stage circuit 40 so that being originally subject to the output-stage circuit 40 of substrate effects
Stream, and it is not biased against the driving force of current limit, and transistor 402 can be eliminated and originally affected by substrate effect.
On the other hand, refer to Fig. 6, Fig. 6 is the schematic diagram of an output-stage circuit 60 of another embodiment of the present invention.It is worth
It is noted that due to output-stage circuit 60 and the assembly in the output-stage circuit 40 of Fig. 4 with same names of Fig. 6 have similar
Function mode and function, therefore for purposes of explanation book content for purpose of brevity, describe in detail just here omit, the link of those assemblies
Relation is as shown in fig. 6, will not be described here.Output-stage circuit 60 is applied to an output stage electricity of the amplifier OP2 shown in Fig. 1
Road, for the input voltage VIN according to an input IN, exports output voltage VO UT in an outfan OUT.Assume output
Level circuit 60 is applied to half power supply supply, and supplies voltage between 1/2VDD to ground terminal potential, and that is, second voltage VDD H is
1/2VDD.Output-stage circuit 60 includes a transistor 600, a transistor 602 and a current source 604.Current source 604 is coupled to
Outfan OUT, and current source 604 is a constant current source, can be used to provide a steady-state current I_BIAS.Output stage with Fig. 4
Unlike circuit 40, transistor 600 is respectively connecting to second source end PW2 and ground terminal GND with the source electrode of transistor 602, with
Receive second voltage VDD_H and ground terminal potential, and transistor 600 is respectively connecting to the first power end with the base stage of transistor 602
PW1 and ground terminal GND.
Similarly, in output-stage circuit 60, when input voltage VIN is a normal bias point, output-stage circuit 60 needs
Persistently produce a steady-state current, in this situation, transistor 600 is not turned on, and required steady-state current will be by current source 604
There is provided steady-state current I_BIAS realizing.When input voltage VIN declines, representing output voltage VO UT needs to rise,
In the case of this, transistor 600 turns on, to provide extracurrent to improve output voltage VO UT.Consequently, it is possible to there is substrate effect
Transistor 600 will can be equivalent to a transistor that substrate effect no occurs with current source 604.Detailed discharge and recharge behavior refers to defeated
Go out grade circuit 40, for the sake of clarity, will not be described here.Consequently, it is possible to output-stage circuit 60 is in the case of the supply of half voltage power supply,
By the cooperating of transistor 602 and current source 604 so that being originally subject to the output-stage circuit 60 of substrate effects can be just
Normal bias current, and instantaneously discharge and recharge behavior also can normally operate and have the driving force not being biased against current limit.
It should be noted that the spirit of the present invention is being applied to the defeated of half voltage power supply supply by carry one constant current source
Go out a grade circuit, to eliminate the substrate effect in output-stage circuit.Certainly according to different application, it is well known that those skilled in the art can be according to this
Make suitable change or modification.For example, as long as output-stage circuit 40 can be made to produce correct output voltage VO UT, transistor 400
Grid can be coupled to different input endpoints from the grid of transistor 402.
In sum, in known technology, when output-stage circuit is applied to half power supply for seasonable it is often necessary to using special
Processing procedure, to provide independent p-type trap and independent N-type trap, to prevent the generation of substrate effect.In comparison, the present invention's is defeated
Go out grade circuit in the case of the supply of half voltage power supply, carry out the running of auxiliary operation amplifier so that originally using constant current source
By substrate effects output-stage circuit can normal bias current, and instantaneous discharge and recharge behavior also can normally operate and
There is the driving force not being biased against current limit, consequently, it is possible to the impact that substrate effect is brought can will fully be eliminated.Again
Person, the present invention does not require the use of particular process sequence to provide independent p-type trap and independent N-type trap, therefore can be effectively saved collection
Become the manufacturing cost of circuit.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (12)
1. a kind of output-stage circuit, including：
One the first transistor, including a first end, is coupled to one first power end, one second end, is coupled to an outfan；One
Three ends, are coupled to an input, for receiving an input voltage；
And one the 4th end, it is coupled to this first power end, for receiving a first voltage；
One transistor seconds, including a first end, is coupled to a second source end, for receiving a second voltage, one second end,
It is coupled to this outfan, one the 3rd end, be coupled to this input, for receiving this input voltage；And one the 4th end, it is coupled to
One ground terminal；And
One current source, is coupled to this outfan, for providing a steady-state current；
Wherein this second voltage is the half of this first voltage.
2. output-stage circuit as claimed in claim 1 is it is characterised in that when the voltage quasi position of this outfan is constant, this
Two-transistor is not turned on.
3. output-stage circuit as claimed in claim 1 is it is characterised in that when the voltage quasi position of this outfan declines, this
Two-transistor turns on.
4. output-stage circuit as claimed in claim 1 is it is characterised in that this first transistor is a p-type MOSFET crystalline substance
Body pipe, the first end of this first transistor is a source electrode, and the second end of this first transistor is a drain electrode, this first transistor
3rd end is a grid, and the 4th end of this first transistor is a base stage.
5. output-stage circuit as claimed in claim 1 is it is characterised in that this transistor seconds is a N-type MOSFET crystalline substance
Body pipe, the first end of this transistor seconds is a source electrode, and the second end of this transistor seconds is a drain electrode, this transistor seconds
3rd end is a grid, and the 4th end of this transistor seconds is a base stage.
6. output-stage circuit as claimed in claim 1 is it is characterised in that the voltage quasi position of this first power end is more than this output
The voltage quasi position at end, and the voltage quasi position of this outfan is more than the voltage quasi position at this second source end.
7. a kind of output-stage circuit, including：
One the first transistor, including a first end, is coupled to one first power end, for receiving a first voltage, one second end,
It is coupled to an outfan；One the 3rd end, is coupled to an input, for receiving an input voltage；And one the 4th end, it is coupled to
One second source end, for receiving a second voltage；
One transistor seconds, including a first end, is coupled to a ground terminal, one second end, is coupled to this outfan, one the 3rd end,
It is coupled to this input, for receiving this input voltage；And one the 4th end, it is coupled to this ground terminal；And
One current source, is coupled to this outfan, for providing a steady-state current；
Wherein this first voltage is the half of this second voltage.
8. output-stage circuit as claimed in claim 7 is it is characterised in that when the voltage quasi position of this outfan is constant, this
One transistor is not turned on.
9. output-stage circuit as claimed in claim 7 is it is characterised in that when the voltage quasi position of this outfan rises, this
One transistor turns.
10. output-stage circuit as claimed in claim 7 is it is characterised in that this first transistor is a p-type MOSFET crystalline substance
Body pipe, the first end of this first transistor is a source electrode, and the second end of this first transistor is a drain electrode, this first transistor
3rd end is a grid, and the 4th end of this first transistor is a base stage.
11. output-stage circuits as claimed in claim 7 are it is characterised in that this transistor seconds is a N-type MOSFET crystalline substance
Body pipe, the first end of this transistor seconds is a source electrode, and the second end of this transistor seconds is a drain electrode, this transistor seconds
3rd end is a grid, and the 4th end of this transistor seconds is a base stage.
12. output-stage circuits as claimed in claim 7 are it is characterised in that the voltage quasi position of this first power end is defeated more than this
Go out the voltage quasi position at end, and the voltage quasi position of this outfan is more than the voltage quasi position of this ground terminal.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610239956.6A CN105932972B (en) | 2012-03-22 | 2012-03-22 | Output-stage circuit |
| CN201210079274.5A CN103326670B (en) | 2012-03-22 | 2012-03-22 | Output-stage circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210079274.5A CN103326670B (en) | 2012-03-22 | 2012-03-22 | Output-stage circuit |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610239956.6A Division CN105932972B (en) | 2012-03-22 | 2012-03-22 | Output-stage circuit |
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| Publication Number | Publication Date |
|---|---|
| CN103326670A CN103326670A (en) | 2013-09-25 |
| CN103326670B true CN103326670B (en) | 2017-03-01 |
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| CN201210079274.5A Active CN103326670B (en) | 2012-03-22 | 2012-03-22 | Output-stage circuit |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610239956.6A Active CN105932972B (en) | 2012-03-22 | 2012-03-22 | Output-stage circuit |
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| TWI708253B (en) * | 2018-11-16 | 2020-10-21 | 力旺電子股份有限公司 | Nonvolatile memory yield improvement and testing method |
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| US6489829B1 (en) * | 2001-04-12 | 2002-12-03 | Advanced Analogic Technologies, Inc. | Multiple-stage control circuit to control rush current in a MOSFET load switch |
| CN101242160A (en) * | 2007-02-08 | 2008-08-13 | 三星电子株式会社 | Two-stage operational amplifier with class ab output stage |
| CN101304240A (en) * | 2007-05-09 | 2008-11-12 | 瑞鼎科技股份有限公司 | Voltage limiting apparatus as well as operation amplifier applying the same and circuit design method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006217172A (en) * | 2005-02-02 | 2006-08-17 | Sanyo Electric Co Ltd | Delay circuit and ring oscillator |
| CN101647194B (en) * | 2007-03-29 | 2012-04-11 | Nxp股份有限公司 | An improved amplifier |
| CN101527556A (en) * | 2008-03-07 | 2009-09-09 | 瑞昱半导体股份有限公司 | Output signal driving circuit and method for driving output signal |
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2012
- 2012-03-22 CN CN201610239956.6A patent/CN105932972B/en active Active
- 2012-03-22 CN CN201210079274.5A patent/CN103326670B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6489829B1 (en) * | 2001-04-12 | 2002-12-03 | Advanced Analogic Technologies, Inc. | Multiple-stage control circuit to control rush current in a MOSFET load switch |
| CN101242160A (en) * | 2007-02-08 | 2008-08-13 | 三星电子株式会社 | Two-stage operational amplifier with class ab output stage |
| CN101304240A (en) * | 2007-05-09 | 2008-11-12 | 瑞鼎科技股份有限公司 | Voltage limiting apparatus as well as operation amplifier applying the same and circuit design method thereof |
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| 低电压全摆幅恒跨导CMOS运算放大器的设计;谢长焱等;《吉首大学学报（自然科学版）》;20060930;第27卷(第5期);第45-48页 * |
| 基于MSP430的低频功率放大器设计;张进峰等;《南通职业大学学报》;20100630;第24卷(第2期);第80-83页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105932972B (en) | 2019-01-15 |
| CN105932972A (en) | 2016-09-07 |
| CN103326670A (en) | 2013-09-25 |
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