CN103319176A - Microwave dielectric ceramic BaCu2V2O8 with low temperature sintering function and preparation method thereof - Google Patents
Microwave dielectric ceramic BaCu2V2O8 with low temperature sintering function and preparation method thereof Download PDFInfo
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103539453A (en) * | 2013-11-13 | 2014-01-29 | 桂林理工大学 | Microwave dielectric ceramic NdBa2V3O11 capable of being co-sintered with Ag electrode at low temperature |
CN105084897A (en) * | 2015-09-08 | 2015-11-25 | 桂林理工大学 | Ultralow-dielectric-constant microwave dielectric ceramic SmY2V3O12 having near-zero resonance frequency temperature coefficient |
CN105084896A (en) * | 2015-09-07 | 2015-11-25 | 桂林理工大学 | Ultralow-dielectric-constant microwave dielectric ceramic EuYV2O8 having near-zero resonance frequency temperature coefficient |
CN105084895A (en) * | 2015-09-07 | 2015-11-25 | 桂林理工大学 | Temperature-stable ultralow-dielectric-constant microwave dielectric ceramic PrYV2O8 |
CN105461287A (en) * | 2015-12-23 | 2016-04-06 | 桂林理工大学 | Low temperature sinterable temperature-stable microwave dielectric ceramic BaCu3Ge4O12 and preparation method thereof |
CN105461288A (en) * | 2015-12-23 | 2016-04-06 | 桂林理工大学 | Low temperature sinterable temperature-stable microwave dielectric ceramic CaCu2Ge2O7 and preparation method thereof |
CN105565809A (en) * | 2016-02-18 | 2016-05-11 | 桂林理工大学 | High-quality-factor temperature-stable type low-dielectric-constant microwave dielectric ceramic Cu2Mg2V2O9 |
CN111362697A (en) * | 2020-03-18 | 2020-07-03 | 湖南大学 | Novel microwave dielectric ceramic capable of being sintered at low temperature and preparation method thereof |
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2013
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Non-Patent Citations (1)
Title |
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SS SALUNKE ET AL: "Magnetic properties and electronic structure of S=1/2 spin gap compound BaCu2V2O8", 《PHYSICAL REVIEW B》 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103539453A (en) * | 2013-11-13 | 2014-01-29 | 桂林理工大学 | Microwave dielectric ceramic NdBa2V3O11 capable of being co-sintered with Ag electrode at low temperature |
CN105084896A (en) * | 2015-09-07 | 2015-11-25 | 桂林理工大学 | Ultralow-dielectric-constant microwave dielectric ceramic EuYV2O8 having near-zero resonance frequency temperature coefficient |
CN105084895A (en) * | 2015-09-07 | 2015-11-25 | 桂林理工大学 | Temperature-stable ultralow-dielectric-constant microwave dielectric ceramic PrYV2O8 |
CN105084897A (en) * | 2015-09-08 | 2015-11-25 | 桂林理工大学 | Ultralow-dielectric-constant microwave dielectric ceramic SmY2V3O12 having near-zero resonance frequency temperature coefficient |
CN105461287A (en) * | 2015-12-23 | 2016-04-06 | 桂林理工大学 | Low temperature sinterable temperature-stable microwave dielectric ceramic BaCu3Ge4O12 and preparation method thereof |
CN105461288A (en) * | 2015-12-23 | 2016-04-06 | 桂林理工大学 | Low temperature sinterable temperature-stable microwave dielectric ceramic CaCu2Ge2O7 and preparation method thereof |
CN105565809A (en) * | 2016-02-18 | 2016-05-11 | 桂林理工大学 | High-quality-factor temperature-stable type low-dielectric-constant microwave dielectric ceramic Cu2Mg2V2O9 |
CN111362697A (en) * | 2020-03-18 | 2020-07-03 | 湖南大学 | Novel microwave dielectric ceramic capable of being sintered at low temperature and preparation method thereof |
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CN103319176B (en) | 2015-06-10 |
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Address after: 541006 the Guangxi Zhuang Autonomous Region Yanshan Yanshan District, Guilin City Street No. 319, Guilin University of Technology (Yanshan campus) Patentee after: Guilin University of Technology Address before: 541004 the Guangxi Zhuang Autonomous Region Guilin Construction Road No. 12 Patentee before: Guilin University of Technology |
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Address after: No. 12, Jian Gong Road, Guilin, the Guangxi Zhuang Autonomous Region Patentee after: Guilin University of Technology Address before: 541006 Yanshan Street 319, Yanshan District, Guilin, the Guangxi Zhuang Autonomous Region, Guilin University of Technology (Yanshan campus) Patentee before: Guilin University of Technology |
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Effective date of registration: 20201228 Address after: Room a1307, 109 Shazhou West Road, yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Hongwu Technology Intermediary Service Co.,Ltd. Address before: 541004 the Guangxi Zhuang Autonomous Region Guilin Construction Road No. 12 Patentee before: GUILIN University OF TECHNOLOGY |