CN103312131B - A kind of high frequency dc to dc converter switching tube turn-off speed method of real-time adjustment - Google Patents
A kind of high frequency dc to dc converter switching tube turn-off speed method of real-time adjustment Download PDFInfo
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- CN103312131B CN103312131B CN201310274515.6A CN201310274515A CN103312131B CN 103312131 B CN103312131 B CN 103312131B CN 201310274515 A CN201310274515 A CN 201310274515A CN 103312131 B CN103312131 B CN 103312131B
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Abstract
A kind of high frequency dc to dc converter switching tube turn-off speed method of real-time adjustment, the method is in the drive circuit of a high frequency dc to dc converter, construct a controllable resistor, be connected in the cut-off current loop of switch tube driving circuit, thereby realize the real-time adjustment of switching tube turn-off speed. The turn-off speed of switching tube can do real-time adjustment with load current size, has improved the turn-off speed of the switching tube under underloading condition, has reduced the turn-off power loss of switching tube under underloading condition. The reliable easily row of the present invention, can raise the efficiency use for DC converter, especially can be applied to the DC converter of powerful employing IGBT as switching tube, to improve the operating efficiency under its underloading.
Description
Technical field
The present invention relates to a kind of method that switching tube turn-off speed is adjusted in real time, belong to the switch tube driving circuit field of high frequency dc to dc converter.
Background technology
In high frequency dc to dc converter, the drive circuit of switching tube is to affect it to open the principal element of speed, turn-off speed and shutoff voltage stress, thereby has also had a strong impact on the efficiency of high frequency dc to dc converter. But turn-off speed and shutoff voltage stress are conflicting. The turn-off speed of switching tube is faster, and the shutoff voltage stress on the switching tube bringing is larger; Otherwise also anti-. As shown in Figure 1, as switching tube Q0When shutoff, if the speed that electric current declines is faster, at the distributed inductance L of circuitsThe induced voltage L of upper generations×di/dtJust larger, Ls×di/dtWith UsWith acting in conjunction at switching tube Q0Upper, strengthen switching tube Q0Shutoff voltage stress. In the time of real work, load current is larger, at switching tube Q0On the electric current that flows through when larger, switching tube Q0Shutoff voltage stress just larger. So in traditional design, the requirement that drive circuit is generally no more than device rated value according to the shutoff voltage stress of switching tube under maximum load designs. The phenomenon of bringing is like this, more lower than maximum load current in the situation that, the shutoff voltage stress of switching tube is less, and voltage margin is larger, especially when circuit enters after discontinous mode. Conversely, this shows in fact, under the condition of work lower than maximum load current, especially under the underloading condition after discontinuous current mode, the turn-off speed of switching tube can design higher than the switching tube turn-off speed under maximum load current completely, and ensures that its shutoff voltage stress is no more than the rated value of device. Because the turn-off speed of switching tube is faster, turn-off power loss is just less, and this benefit of bringing is the circuit efficiency that can improve lower than under maximum load current condition of work, especially improves the circuit efficiency under underloading. But in traditional drive circuit design, after circuit design completes, parameter, with regard to steady job, is not adjusted drive circuitry parameter according to circuital current, certainly just cannot adjust the turn-off speed of driven switching tube yet. So, be necessary to propose one and can adjust drive circuitry parameter according to circuital current, thereby adjust in real time the method for switching tube turn-off speed, to improve the efficiency of circuit under underloading.
Summary of the invention
The object of the invention is, a kind of high frequency dc to dc converter switching tube turn-off speed method of real-time adjustment is provided.
Realizing technical scheme of the present invention is: in the drive circuit of a high frequency dc to dc converter, construct a controllable resistor, be connected in the cut-off current loop of switch tube driving circuit, thereby realize the real-time adjustment of switching tube turn-off speed.
High frequency dc to dc converter comprises high frequency non-isolation type direct-current-DC converter and high-frequency isolation type DC-DC converter.
Switching tube of the present invention is the main switch in above-mentioned high frequency dc to dc converter, does not comprise the auxiliary switch increasing in order to realize soft switch object.
Described main switch is full-control type device for power switching, comprises power MOSFET, IGBT, but be not limited to this two class.
Drive circuit of the present invention, as shown in Figure 2, by driving positive supply+Ucc, drive negative supply Uss, triode Q1And Q2, drive resistance R1、R2, driving pulse source uPWM, and controlled resistor RcForm. Driving pulse source uPWMConnecting resistance R1Left end, resistance R1Right-hand member meet triode Q1And Q2Base stage, drive positive supply+UccMeet triode Q1Colelctor electrode, triode Q1Emitter stage meet triode Q2Emitter stage and drive resistance R2Left end, drive resistance R2Right-hand member connect by driving switch pipe Q0Grid, triode Q2Colelctor electrode meet described controlled resistor RcThe upper end of controlled side, controlled resistor RcThe lower termination of controlled side drives negative supply Uss, drive positive supply+UccWith driving negative supply UssGround and switching tube Q0Emitter stage be connected. Controlled resistor RcControl termination control signal ucr. Capacitor C in figuregsBy driving switch pipe Q0Grid equivalent parasitic capacitances.
Described driving positive supply+UccAt+10V between+20V.
Described driving negative supply UssAt 0V between-20V.
Described driving pulse source uPWMThe high frequency control impuls that a control system produces, by modulation signal ucWith carrier signal uaRelatively produce. As modulation signal ucBe greater than carrier signal uaTime, output uPWMSignal is high level; As modulation signal ucBe less than carrier signal uaTime, output uPWMSignal is low level. As shown in Figure 3. uPWMThe dutycycle of signal is defined as D.
Described modulation signal ucProduce and export by system control loop.
Described carrier signal uaFor triangular wave or sawtooth waveforms.
Described controlled resistor RcComprise control end and controlled end, control termination control signal ucr; Controlled end resistance suspension control signal ucrControl, and access according to method described in drive circuit. Controlled resistor can utilize transistor amplifier, or the realization of MOSFET amplifying circuit, but is not limited to said method.
Described control signal ucrBy a positive voltage+upDeduct modulation signal ucAnd obtain, as shown in Figure 4.
Described transistor amplifier is by control signal ucr, resistance R3With triode Q3Form resistance R3Left end meet control signal ucr, resistance R3Right-hand member meet triode Q3Base stage, triode Q3Collector and emitter attachment Fig. 2 in controlled resistor RcThe upper and lower side of controlled side. As shown in Figure 5.
Described MOSFET amplifying circuit is by control signal ucr, resistance R4With MOSFET pipe Q4Form resistance R4Left end meet control signal ucr, resistance R4Right-hand member connect the grid of MOSFET, MOSFET manages Q4Drain electrode and source electrode attachment Fig. 2 in controlled resistor RcThe upper and lower side of controlled side. As shown in Figure 6.
Below in conjunction with accompanying drawing 2 ~ accompanying drawing 7, operation principle of the present invention is described.
Accompanying drawing 7 is under input and output voltage stationary state, the work dutycycle D of DC converter and load current ioRelation curve schematic diagram. Wherein A point is discontinuous current mode and continuous critical point. A point left side is discontinuous current mode district, and A point right side is continuous current mode district. In discontinuous current mode district, dutycycle rises and rises rapidly with load current; In continuous current mode district, dutycycle rises and rising with load current.
In the time that circuit is operated in respectively B point on accompanying drawing 7 curves and C point, there is io(B)<io(C), and D(B)<D(C). The modulation signal u that corresponding B point and C are orderedc(B)And uc(C)Relation be uc(B)<uc(C), the control signal u obtainingcr(B)And ucr(C)Pass be ucr(B)>ucr(C). This ucrSignal is sent into after the MOSFET amplifying circuit of accompanying drawing 6, described ucrSignal just equals u under stable stateGSSignal, and uGS(B)>uGS(C). The characteristic working curve of MOSFET shown in 8 with reference to the accompanying drawings, the output current i of generationD(B)>iD(C), this means that drive circuit cut-off current while being operated in B point is greater than to be operated in the drive circuit cut-off current that C is ordered. Because drive circuit cut-off current is larger, switching tube turn-off speed is faster. So, the turn-off speed of the switching tube of the turn-off speed of the switching tube while being operated in as seen B point when being operated in C point. So just obtain the method that switching tube turn-off speed is adjusted in real time. And in when design, as long as ensured the same in fully loaded lower switching tube turn-off speed and traditional design method design of circuit, just can obtain and be less than under full load conditions, especially higher switching tube turn-off speed under underloading, thereby the circuit efficiency of raising underloading.
Technique effect of the present invention is: the turn-off speed of switching tube can do real-time adjustment with load current size, has improved the turn-off speed of the switching tube under underloading condition, has reduced the turn-off power loss of switching tube under underloading condition.
The reliable easily row of the present invention, can raise the efficiency use for DC converter, especially can be applied to the DC converter of powerful employing IGBT as switching tube, to improve the operating efficiency under its underloading.
Brief description of the drawings
Fig. 1 is inductive load on-off circuit;
Fig. 2 is a kind of high frequency dc to dc converter switching tube turn-off speed method of real-time adjustment circuit topology;
Fig. 3 is driving pulse source uPWMProduce schematic diagram;
Fig. 4 is control signal ucrSchematic diagram;
Fig. 5 is transistor amplifier figure;
Fig. 6 is MOSFET amplification circuit diagram;
Fig. 7 is dutycycle and load current relation curve;
Fig. 8 is MOSFET characteristic working curve;
Fig. 9 is concrete implementing circuit topology.
Detailed description of the invention
Below in conjunction with an instantiation of accompanying drawing 9, the present invention is described in further detail. The only unrestricted technical scheme of the present invention in order to explanation.
Referring to accompanying drawing 9, it is a boost type DC converter that has adopted switching tube turn-off speed method of real-time adjustment of the present invention. Accompanying drawing 9 comprises four parts: (1) booster type DC converter; (2) booster circuit control circuit; (3) controlled resistor; (4) drive circuit.
Described booster type DC converter belongs to non-isolation type high frequency dc to dc converter, by input power Uin, filter inductance L1, controlled switch pipe Q0, diode D1, output capacitance Co, load resistance RLAnd current sense resistor R3, voltage detecting resistance R5And R6Form.
Described input power UinPositive pole meet filter inductance L1Left end, L1Right terminating diode D1Anode and controlled switch pipe Q0Colelctor electrode, Q0Grid connect driving resistance R2Left end, Q0The emitter stage utmost point meet current sense resistor R3Right-hand member and output capacitance CoNegative pole, load resistance RLLower end, voltage detecting resistance R6Lower end, current sense resistor R3Left end meet input power UinNegative pole; Diode D1Anode meet filter inductance L1Right-hand member and controlled switch pipe Q0Colelctor electrode, diode D1Negative electrode meet output capacitance CoPositive pole, output loading RLUpper end and voltage detecting resistance R5Upper end, R5Lower termination voltage detecting resistance R6Upper end. Voltage detecting resistance R6, output loading RLLower end, output capacitance CoNegative pole, controlled switch pipe Q0Emitter stage and current sense resistor R3Left end jointly connect with reference to ground.
Described controlled switch pipe Q0The IGBT model adopting is IRG4PC50U, diode D1Adopt RHRG5080 Ultrafast recovery diode. UinFor 200V, inductance L1For 1mH, rated output power is 4KW, output capacitance CoBe 470 μ F, current sense resistor R3Be 0.04 Ω, voltage detecting resistance R5And R6Be respectively 520k Ω and 10k Ω.
Described booster circuit control circuit is the circuit that booster type DC converter is averaged to Current Control, by control chip IC1(UC3854) and peripheral circuit form.
Wherein the ena pin of UC3854 connects vref pin and the capacitor C of UC38548Positive pole, capacitor C8Negative pole connect with reference to ground.
The vsense pin of UC3854 and voltage detecting resistance R5Upper end, voltage detecting resistance R6Lower end, capacitor C4Positive pole and resistance R12Left end be connected; Capacitor C4Negative pole connecting resistance R12Right-hand member and be connected to the vaout pin of UC3854. Voltage detecting resistance R5、R6Form feedback voltage division circuit, capacitor C4And resistance R12Form Voltage loop control and compensation circuit.
The iac pin connecting resistance R of UC38548Right-hand member and resistance R17Upper end; Resistance R8Left end meet booster circuit input power UinPositive pole and resistance R9Upper end; Resistance R17Vref pin and the capacitor C of lower termination UC38549Positive pole and resistance R18Right-hand member, resistance R19Left end, capacitor C9Negative pole connect with reference to ground, resistance R18Left end connect pklmt pin and the capacitor C of UC385410Positive pole, resistance R16Right-hand member, resistance R19Right-hand member meet operational amplifier in-phase input end and Zener diode VD1Negative electrode.
The vrms pin connecting resistance R of UC385410Right-hand member, resistance R11Right-hand member, capacitor C2Positive pole; Resistance R10Left end connecting resistance R9Lower end and capacitor C1Positive pole, capacitor C1Negative pole connect with reference to ground, resistance R9Upper termination input power UinPositive pole and resistance R8Left end, resistance R8Right-hand member connect iac pin and the resistance R of UC385417Upper end; Resistance R11Left end connect with reference to ground; Capacitor C2Negative pole connect with reference to ground.
The ss pin of UC3854 connects capacitor C3Positive pole, capacitor C3Negative pole connect with reference to ground.
The multout pin connecting resistance R of UC385413Right-hand member; Resistance R13Left end meet current sense resistor R3Left end and input power UinNegative pole and resistance R16Left end, resistance R16Right-hand member connect capacitor C10Positive pole and resistance R18Left end and the pklmt pin of UC3854, capacitor C10Negative pole connect with reference to ground.
The isense pin connecting resistance R of UC38547Lower end, resistance R15Left end and capacitor C7Positive pole; Resistance R7Upper termination current sense resistor R3Right-hand member and with reference to ground; Resistance R15Right-hand member connect capacitor C6Positive pole, capacitor C6Negative pole connect capacitor C7Negative pole and caout pin and the resistance R of UC385420Left end; Capacitor C7Negative pole connect capacitor C6Negative pole and caout pin and the resistance R of UC385420Left end. Resistance R17And capacitor C6、C7Form together current loop control compensating circuit.
The ct pin of UC3854 connects capacitor C5Positive pole, capacitor C5Negative pole connecting resistance R14Left end and with reference to ground.
The rest pin connecting resistance R of UC385414Right-hand member, resistance R14Left end connect capacitor C5Negative pole and with reference to ground. Resistance R14And capacitor C5Determine the frequency of oscillation of oscillator.
The gnd pin of UC3854 connects with reference to ground.
The gtdrv pin of UC3854 connects driving resistance R1Left end, drive resistance R1Right-hand member meet triode Q1、Q2Base stage.
The caout pin connecting resistance R of UC385420Left end, capacitor C6And capacitor C7Negative pole; Resistance R20Right-hand member connect inverting input and the resistance R of operational amplifier lm35821Left end; Capacitor C6Anodal connecting resistance R15Right-hand member, resistance R15Left end connect capacitor C7Positive pole and the isense pin of UC3854; Capacitor C7Anodal connecting resistance R15Left end and the isense pin of UC3854.
The pklmt pin connecting resistance R of UC385418Left end, capacitor C10Positive pole, resistance R16Right-hand member; Resistance R18Right-hand member connect vref pin, the capacitor C of UC38549Positive pole, resistance R17Lower end and resistance R19Left end, capacitor C9Negative pole connect with reference to ground, resistance R17Upper terminating resistor R8Right-hand member and the iac pin of UC3854, resistance R19Right-hand member meet in-phase input end and the Zener diode VD of operational amplifier lm3581Anode; Zener diode VD1Negative electrode connect with reference to ground; Capacitor C10Negative pole connect with reference to ground; Resistance R16Left end connecting resistance R13Left end and current sense resistor R3Left end and input power UinNegative pole, resistance R13Right-hand member connect the multout pin of UC3854.
The vref pin of UC3854 connects ena pin, the resistance R of UC385417Lower end, capacitor C9Positive pole, capacitor C8Positive pole, resistance R18Right-hand member and resistance R19Left end; Resistance R17Upper terminating resistor R8Right-hand member and the iac pin of UC3854; Capacitor C9Negative pole connect with reference to ground; Resistance R18Left end connect pklmt pin and the capacitor C of UC385410Positive pole, resistance R16Right-hand member; Resistance R19Right-hand member meet in-phase input end and the Zener diode VD of operational amplifier lm3581Negative electrode.
The vcc pin of UC3854 connects positive supply+18V, capacitor C10Positive pole and the ena pin of UC3854; ; Capacitor C10Negative pole connect with reference to ground.
Resistance R in described boost control circuit7For 4k Ω, resistance R8For 910k Ω, resistance R9For 910k Ω, resistance R10For 91k Ω, resistance R11For 20k Ω, resistance R12For 40k Ω, resistance R13For 4k Ω, resistance R14For 15k Ω, resistance R15For 24k Ω, resistance R16For 1.6k Ω, resistance R17For 220k Ω, resistance R18For 10k Ω; Capacitor C1Be 0.1 μ F, capacitor C2Be 0.5 μ F, capacitor C3Be 0.01 μ F, capacitor C4For 47nF, capacitor C5For 800pF, capacitor C6For 620pF, capacitor C7For 620pF, capacitor C8Be 0.1 μ F, capacitor C9Be 0.1 μ F, capacitor C10For 470pF,
Described controlled resistor RcCircuit comprises a subtracter and a transistor amplifier. Described subtracter is by resistance R19, resistance R20, operational amplifier lm358, Zener diode VD1And drive positive supply+18V to form. Described transistor amplifier is by resistance R4, triode Q4Form. Resistance R19Left end connect vref pin and the resistance R of UC385418Right-hand member, resistance R17Lower end and capacitor C9Positive pole, resistance R19Right-hand member meet in-phase input end and the Zener diode VD of operational amplifier lm3581Negative electrode, Zener diode VD1Anode connect with reference to ground; Resistance R20Left end connect caout pin and the capacitor C of UC38546、C7Negative pole, resistance R20Right-hand member connect reverse input end and the resistance R of operational amplifier lm35821Left end, resistance R21Right-hand member connect output and the resistance R of operational amplifier lm3584Left end; The in-phase input end connecting resistance R of operational amplifier lm35819Right-hand member and Zener diode VD1Negative electrode, anti-phase input terminating resistor R20Right-hand member and resistance R21Left end, output connecting resistance R21Right-hand member and resistance R4Left end, power end vcc meets driving positive supply+18V, power end vee connect with reference to ground. Resistance R4Left end connect output and the resistance R of operational amplifier lm35821Right-hand member, resistance R4Right-hand member meet triode Q4Base stage; Triode Q4Collector connecting transistor Q2Colelctor electrode, Q4Emitter stage connect with reference to ground.
Described controlled resistor RcR in circuit19，R20，R21All 5.1k Ω; Described resistance R46.2k; Described triode Q4C2655; Described VD1It is the voltage-stabiliser tube of 5.1V.
Described drive circuit is by driving positive supply+18V, triode Q1And Q2, and drive resistance R1、R2Form. Described driving positive supply+18V meets triode Q1Colelctor electrode, described triode Q1Emitter stage meet triode Q2Emitter stage and drive resistance R2Left end, drive resistance R2Right-hand member meet the controlled switch pipe Q of booster circuit0Grid; Triode Q2Collector connecting transistor Q4Colelctor electrode, triode Q4Emitter stage connect with reference to ground, triode Q1And Q2Base stage connect driving resistance R1Right-hand member, R1The left end gtdrv pin that meets UC3854 obtain drive pulse signal;
In described drive circuit, Q1The triode model adopting is C2655, Q2The triode model adopting is A1020, resistance R1Be 100 Ω, resistance R2Be 10 Ω.
In the implementation case, adopt a conventional UC3854 controller to control a voltage boosting dc translation circuit. UC3854 is by R5, and the output voltage that R6 forms feeds back, and the input current feedback of R3, and other peripheral circuits, formed an Average Current Control device. The signal of Average Current Control device is exported by caout, compares with the sawtooth signal of ct pin, produces pwm signal, exports through gtdr pin. Modulation signal u described in the corresponding summary of the invention of caout pin signal hereinc, the carrier signal u described in the corresponding summary of the invention of ct pin signala, the driving pulse source u described in the corresponding summary of the invention of gtdr pin signalPWM。
In the present embodiment, because voltage-stabiliser tube VD1Voltage be 5.1V, modulation signal ucAfter the subtraction circuit forming through lm358, the output voltage obtaining is 10.2-uc. 10.2V is herein described in corresponding summary of the invention+up. And the output voltage (10.2-u of lm358c) with regard to control signal u described in corresponding summary of the inventioncr. This control signal ucrThrough R4 and triode Q4After, according to the amplification characteristic of triode, produce with ucrThe triode Q of real-time change4Output current, and triode Q4Output current is exactly the electric current of drive circuit turn-off circuit. This just shows switching tube Q0Turn-off speed can be subject to modulation signal ucAdjust in real time.
This method invention is by switching tube turn-off speed method of real-time adjustment, can adjust switching tube turn-off speed according to load current, switching tube is being less than under full load conditions, especially under underloading condition, has turn-off speed faster, thus the operating efficiency while improving underloading.
Claims (1)
1. a high frequency dc to dc converter switching tube turn-off speed method of real-time adjustment, is characterized in that, described method, in the drive circuit of a high frequency dc to dc converter, is constructed a controlled resistor Rc, be connected on switching tube Q0In the cut-off current loop of drive circuit, thereby realize switching tube Q0The real-time adjustment of turn-off speed;
Described drive circuit is by driving positive supply+Ucc, drive negative supply Uss, triode Q1And Q2, drive resistance R1、R2, driving pulse source uPWM, and controlled resistor RcForm; Driving pulse source uPWMConnecting resistance R1Left end, resistance R1Right-hand member meet triode Q1And Q2Base stage, drive positive supply+UccMeet triode Q1Colelctor electrode, triode Q1Emitter stage meet triode Q2Emitter stage and drive resistance R2Left end, drive resistance R2Right-hand member connect by driving switch pipe Q0Grid, triode Q2Colelctor electrode meet described controlled resistor RcThe upper end of controlled side, controlled resistor RcThe lower termination of controlled side drives negative supply Uss, drive positive supply+UccWith driving negative supply UssGround and switching tube Q0Emitter stage be connected; Controlled resistor RcControl termination control signal ucr；
Described controlled resistor RcComprise control end and controlled end, control termination control signal ucr; Controlled end resistance suspension control signal ucrControl; Controlled resistor utilizes transistor amplifier to realize;
Described switching tube Q0Full-control type device for power switching MOSFET or IGBT;
Described driving pulse source uPWMThe high frequency control impuls that a control system produces, by modulation signal ucWith carrier signal uaRelatively produce, as modulation signal ucBe greater than carrier signal uaTime, output uPWMSignal is high level; As modulation signal ucBe less than carrier signal uaTime, output uPWMSignal is low level; uPWMThe dutycycle of signal is defined as D;
Described transistor amplifier is by control signal ucr, resistance R3With triode Q3Form resistance R3Left end meet control signal ucr, resistance R3Right-hand member meet triode Q3Base stage, triode Q3Collector and emitter connect respectively controlled resistor RcThe upper and lower side of controlled side; Described control signal ucrBy a positive voltage+upDeduct modulation signal ucAnd obtain.
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| CN201310274515.6A CN103312131B (en) | 2013-07-03 | 2013-07-03 | A kind of high frequency dc to dc converter switching tube turn-off speed method of real-time adjustment |
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| CN104539167B (en) * | 2014-12-19 | 2017-04-19 | 广州金升阳科技有限公司 | Synchronous rectification control method of push-pull converter and control chip |
| CN105048778B (en) * | 2015-07-02 | 2019-01-08 | 南京航空航天大学 | A kind of adaptive cut-off method of power tube applied to high frequency PFC power inverter |
| CN112491252A (en) * | 2020-12-30 | 2021-03-12 | 深圳市永联科技股份有限公司 | Driving method and circuit for improving reliability of SIC MOSFET |
| CN113434005B (en) * | 2021-07-15 | 2022-06-21 | 苏州瀚宸科技有限公司 | Controllable resistance circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0354435A2 (en) * | 1988-08-12 | 1990-02-14 | Hitachi, Ltd. | A drive circuit for an insulated gate transistor; and its use in a switching circuit, a current switching apparatus and an induction motor system |
| CN1308407A (en) * | 2000-12-26 | 2001-08-15 | 深圳市华为电气技术有限公司 | Single-phase power factor correcting step-up converter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3883925B2 (en) * | 2002-07-30 | 2007-02-21 | 三菱電機株式会社 | Power semiconductor element drive circuit |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0354435A2 (en) * | 1988-08-12 | 1990-02-14 | Hitachi, Ltd. | A drive circuit for an insulated gate transistor; and its use in a switching circuit, a current switching apparatus and an induction motor system |
| CN1308407A (en) * | 2000-12-26 | 2001-08-15 | 深圳市华为电气技术有限公司 | Single-phase power factor correcting step-up converter |
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