CN103311444A - Electroluminescent device and preparation method thereof - Google Patents
Electroluminescent device and preparation method thereof Download PDFInfo
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- CN103311444A CN103311444A CN2012100569367A CN201210056936A CN103311444A CN 103311444 A CN103311444 A CN 103311444A CN 2012100569367 A CN2012100569367 A CN 2012100569367A CN 201210056936 A CN201210056936 A CN 201210056936A CN 103311444 A CN103311444 A CN 103311444A
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Abstract
The invention belongs to the field of electroluminescent devices and discloses an electroluminescent device and a preparation method thereof. The electroluminescent device comprises an anode conductive glass substrate, a hole injection layer, a hole transport layer, a luminescent layer, a first electron transport layer, a second electron transport layer, an electron injection layer and a cathode layer which are sequentially stacked. According to the electroluminescent device provided by the invention, the electron transport rate is increased and the process difficulty is reduced by adding the second electron transport layer; and as the second electron transport layer is made of organic material, device aging phenomenon caused by inconsistent stability of different types of materials is avoided. In addition, different types of materials may influence each other to constraint electron transport to some extent. Through preparation of the second electron transport layer, occurrence of the phenomena can be effectively avoided, the electron transport rate can be improved, and the luminescence efficiency can be enhanced.
Description
Technical field
The present invention relates to electroluminescent device, relate in particular to a kind of electroluminescent device and preparation method thereof.
Background technology
1987, the C.W.Tang of U.S. Eastman Kodak company and VanSlyke reported the breakthrough in the organic electroluminescent research.Utilize the ultrathin film technology to prepare high brightness, high efficiency double-deck electroluminescent device (OLED).In this double-deck device, brightness reaches 1000cd/m under the 10V
2, its luminous efficiency is that 1.51lm/W, life-span were greater than 100 hours.
The principle of luminosity of OLED is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and the hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from the ground state transition to excitation state, excited energy produces photon by the radiation inactivation, release luminous energy.
In traditional luminescent device, it generally is the transmission rate that preparation one deck electron transfer layer improves electronics, prepare the injection efficiency that one deck electron injecting layer improves electronics again, and the transmission rate of electronics is hanged down two or three orders of magnitude than the transmission rate in hole usually, therefore, usually all be electron transfer layer to be carried out n mix, that is to say and carry out electron transfer layer metal-doped, as the Cs salt dopping in Bphen, the Li salt dopping is in TPBi, improve electric transmission speed, this method adopts more, and can effectively improve electric transmission speed, but, owing to be to mix, difficult control on the technology, because evaporation of metals temperature and organic evaporating temperature differ bigger, be generally 800 ℃ as Li salt evaporating temperature, and organic substance, as Bphen, the TPBi evaporating temperature is about 200-300 ℃, and the speed that the difference of evaporating temperature makes both steam altogether is different, this just makes the ratio of steaming thing altogether be difficult to control, finally be difficult to accurately reach target proportion, result's reappearance is relatively poor, makes the luminous efficiency of device can not get improving.
Summary of the invention
The electroluminescent device that provides a kind of luminance higher is provided one of problem to be solved by this invention.
A kind of electroluminescent device comprises the anode conducting substrate of glass, hole injection layer, hole transmission layer, luminescent layer, first electron transfer layer, second electron transfer layer, electron injecting layer and the cathode layer that stack gradually.
In the described electroluminescent device, the material of each functional layer is as follows:
Described anode conducting substrate of glass is selected from indium tin oxide glass, mix the zinc oxide glass of aluminium or mix the zinc oxide glass of indium;
The material of described hole injection layer is selected from molybdenum trioxide, tungstic acid or vanadic oxide;
The material of described hole transmission layer is selected from 1,1-two [4-[N, N '-two (p-tolyl) amino] phenyl] cyclohexane, 4,4 ', 4 " three (carbazole-9-yl) triphenylamine, N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidines;
To be dopant material be doped to the composite material of forming in the material of main part according to the ratio of mass percent 1～20% to the material of described luminescent layer; Wherein, dopant material is selected from two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium, two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and close iridium or three (2-phenylpyridine) and close iridium); Material of main part is selected from 1,1-two [4-[N, N '-two (p-tolyl) amino] phenyl] cyclohexane, 4,4 ', 4 " three (carbazole-9-yl) triphenylamine, N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidines;
The material of described first electron transfer layer is selected from 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole;
The material of described second electron transfer layer is selected from C
60Or C
70Fullerene or the methyl butyrate derivative of fullerene;
The material of described electron injecting layer is selected from cesium carbonate, cesium fluoride, nitrine caesium or lithium fluoride;
The material of described cathode layer is selected from silver, aluminium, platinum or gold.
Two of problem to be solved by this invention is to provide the preparation method of above-mentioned electroluminescent device, comprises the steps;
S1, the anode conducting substrate of glass is carried out photoetching treatment, use liquid detergent, deionized water, acetone, ethanol, each ultrasonic cleaning 15min of isopropyl alcohol subsequently successively, remove organic pollution;
S2, will clean up back antianode electro-conductive glass suprabasil anode layer and carry out oxygen plasma treatment, the processing time is 5-15min, and power is 10-50W;
S3, employing evaporation process stack gradually evaporation hole injection layer, hole transmission layer, luminescent layer, first electron transfer layer, second electron transfer layer, electron injecting layer and cathode layer on the anode layer surface of anode conducting substrate of glass;
After above-mentioned processing step is finished, make electroluminescent device.
Electroluminescent device provided by the invention, by adding second electron transfer layer, strengthen electric transmission speed, simplified the operation difficulty, and the second layer adopts organic material, avoided dissimilar material owing to the inconsistent device aging phenomenon that causes of stability, in addition, dissimilar materials may interact, make the transmission of electronics be subjected to certain restriction, the present invention can effectively avoid the appearance of these phenomenons by preparation second electron transfer layer, improve electric transmission speed, strengthened luminous efficiency.
The preparation method of electroluminescent device provided by the invention, its preparation technology is simple, processing cost is low, is fit to commercially produce.
Description of drawings
Fig. 1 is the concrete electroluminescent device structural representation of implementing;
Brightness and voltage relationship figure between the electroluminescent device that Fig. 2 makes for embodiment 1 and the electroluminescent device of Comparative Examples.
Embodiment
The electroluminescent device that this embodiment provides, as shown in Figure 1, comprise anode conducting substrate of glass 11, hole injection layer 12, hole transmission layer 13, luminescent layer 14, first electron transfer layer 15, second electron transfer layer 16, electron injecting layer 17 and the cathode layer 18 that stacks gradually; Wherein, anode conducting substrate of glass 11 comprises anode layer 112 and substrate of glass 111.
Electroluminescent device described above, material and the thickness of each functional layer are as follows:
Anode conducting substrate of glass 11 is selected from indium tin oxide glass, mix the zinc oxide glass of aluminium or mix the zinc oxide glass of indium, and its anode layer 112 is respectively indium tin oxide (ITO), mix the zinc oxide (AZO) of aluminium, mix the zinc oxide (IZO) of indium; Therefore, indium tin oxide glass, the zinc oxide glass of mixing aluminium, the zinc oxide glass of mixing indium are called for short ito glass, AZO glass, IZO glass respectively;
The material of hole injection layer 12 is selected from molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2O
5), preferred MoO
3, the thickness of hole injection layer is 20-80nm, preferred thickness is 40nm;
The material of hole transmission layer 13 is selected from 1,1-two [4-[N, N '-two (p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4 ', 4 " three (carbazole-9-yl) triphenylamine (TCTA), N, N '-(1-naphthyl)-N; N '-diphenyl-4, the preferred NPB of 4 '-benzidine (NPB); The thickness of hole transmission layer is 20-60nm, and preferred thickness is 40nm;
The material of luminescent layer 14 is selected from two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium (FIrpic), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and close iridium (Ir (MDQ)
2(acac)) or three (2-phenylpyridines) close iridium (Ir (ppy)
3);
Perhaps to be dopant material be doped to the composite material of forming in the material of main part according to the ratio of mass percent 1～20% to the material of luminescent layer 14; Wherein, dopant material is selected from two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium (FIrpic), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and close iridium (Ir (MDQ)
2(acac)) or three (2-phenylpyridines) close iridium (Ir (ppy)
3); Material of main part is selected from 1,1-two [4-[N, N '-two (p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4 ', 4 " three (carbazole-9-yl) triphenylamine (TCTA), N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidines (NPB);
The thickness of luminescent layer 14 is 2-30nm;
The material of luminescent layer 14 is preferably Ir (ppy)
3Be doped among the TCTA, and the doping mass percent is 10% that at this moment, the thickness of luminescent layer is preferably 20nm;
The material of first electron transfer layer 15 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, the 4-triazole derivative (as, TAZ) or N-aryl benzimidazole (TPBi); The thickness of first electron transfer layer 15 is 20-60nm, preferred 40nm;
The material of described second electron transfer layer 16 is selected from C
60Or C
70Fullerene or the methyl butyrate derivative (PCBM) of fullerene; The thickness of described second electron transfer layer 16 is 2-10nm;
The material of electron injecting layer 17 is selected from cesium carbonate (Cs
2CO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF), be preferably Cs
2CO
3The thickness of electron injecting layer is 0.5-10nm, and preferred thickness is 5nm;
The material of cathode layer 18 is selected from silver (Ag), aluminium (Al), platinum (Pt) or gold (Au), is preferably Ag; The thickness of cathode layer is 80～250nm, and preferred thickness is 150nm.
Above-mentioned electroluminescent device by adding second electron transfer layer, strengthens electric transmission speed, simplified the operation difficulty, and the second layer adopts organic material, has avoided dissimilar materials because the stable inconsistent device aging phenomenon that causes, in addition, dissimilar materials may interact, make the transmission of electronics be subjected to certain restriction, the present invention can effectively avoid the appearance of these phenomenons by preparation second electron transfer layer, improve electric transmission speed, strengthened luminous efficiency.
The preparation method of above-mentioned electroluminescent device comprises the steps;
S1, the anode conducting substrate of glass is carried out photoetching treatment, use liquid detergent, deionized water, acetone, ethanol, each ultrasonic cleaning 15min of isopropyl alcohol subsequently successively, remove organic pollution;
S2, will clean up back antianode electro-conductive glass suprabasil anode layer and carry out oxygen plasma treatment, the processing time is 5-15min, and power is 10-50W;
S3, employing evaporation process stack gradually evaporation hole injection layer, hole transmission layer, luminescent layer, first electron transfer layer, second electron transfer layer, electron injecting layer and cathode layer on the anode layer surface of anode conducting substrate of glass;
After above-mentioned processing step is finished, make electroluminescent device.
The preparation method of above-mentioned electroluminescent device, its preparation technology is simple, processing cost is low, is fit to commercially produce.
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Following examples, its evaporation process are all in high vacuum coating equipment (scientific instrument development center, Shenyang Co., Ltd, pressure＜1 * 10
-3Pa) carry out in.
Embodiment 1
Earlier ito glass is carried out photoetching treatment, be cut into needed size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution on ito glass surface; Clean up the back ito glass is carried out suitable processing: oxygen plasma treatment ITO layer, the processing time is 5min, power is 30W; (material is MoO to the evaporation hole injection layer successively
3, thickness is 40nm), hole transmission layer (material is NPB, and thickness is 40nm), (material is TCTA:Ir (ppy) to luminescent layer
3, Ir (ppy)
3Be dopant material, TCTA is material of main part, Ir (ppy)
3The doping mass percent be 10%; The thickness of this luminescent layer is 20nm), first electron transfer layer (material is TPBi, and thickness is 40nm); (material is C to follow hot evaporation second electron transfer layer
60, thickness is 5nm); At last on second electron transfer layer successively the evaporation electron injecting layer (material is Cs
2CO
3, thickness is 5nm) and cathode layer (material is Ag, and thickness is 150nm).Obtain needed electroluminescent device at last, its structure is: ito glass/MoO
3/ NPB/TCTA:Ir (ppy)
3/ C
60/ Cs
2CO
3/ Ag.
Brightness and voltage relationship figure between the electroluminescent device that Fig. 2 makes for embodiment 1 and the electroluminescent device of Comparative Examples; The electroluminescent device structure of Comparative Examples is: ito glass/MoO
3/ NPB/TCTA:Ir (ppy)
3/ TPBi/Cs
2CO
3/ Ag; Wherein, curve 1 is the brightness of electroluminescent device of embodiment 1 and the relation curve of voltage; Curve 2 is the brightness of electroluminescent device of Comparative Examples and the relation curve of voltage; 2602), electroluminescent spectrum tester (U.S. photo research company, model: PR650) and screen intensity meter (Beijing Normal University, model: ST-86LA) current-voltage tester (U.S. Keithly company, model:.
Can see that from accompanying drawing 2 under different brightness, the brightness of the electroluminescent device that embodiment 1 makes is big than Comparative Examples all, the brightness 21621cd/m of embodiment 1
2, and that Comparative Examples only is 14362cd/m
2, this all illustrates, prepares the second auxiliary electron transport layer, can effectively improve electric transmission speed, thereby improves the recombination probability of hole and electronics, finally improves luminous efficiency.
Earlier IZO glass is carried out photoetching treatment, be cut into needed size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal IZO glass surface; Clean up the back IZO glass is carried out suitable processing: oxygen plasma treatment IZO layer, the processing time is 5min, power is 50W; (material is WO to the evaporation hole injection layer successively
3, thickness is 20nm), hole transmission layer (material is TCTA, and thickness is 60nm), (material is NPB:Ir (MDQ) to luminescent layer
2(acac), NPB is material of main part, Ir (MDQ)
2(acac) be dopant material, very than being 1%, light emitting layer thickness is 2nm to the doping quality), first electron transfer layer (material is Bphen, and thickness is 80nm); (material is C to follow hot evaporation second electron transfer layer
70, thickness is 2nm); Evaporation electron injecting layer (material is LiF, and thickness is 0.5nm) and cathode layer (material is Al, and thickness is 100nm) successively on second electron transfer layer obtain needed electroluminescent device at last at last, and its structure is: IZO glass/WO
3/ TCTA/NPB:Ir (MDQ)
2(acac)/Bphen/C
70/ LiF/Al.
Embodiment 3
Earlier IZO glass is carried out photoetching treatment, be cut into needed size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal IZO glass surface; Clean up the back IZO glass is carried out suitable processing: oxygen plasma treatment IZO layer, the processing time is 15min, power is 10W; (material is V to the evaporation hole injection layer successively
2O
5Thickness is 80nm), (material is TAPC to hole transmission layer, thickness is 20nm), (material is TCTA:Firpic to luminescent layer, TCTA is material of main part, Firpic is that dopant material doping quality is very than being 20%, light emitting layer thickness is 30nm), first electron transfer layer (material is TPBi, and thickness is 80nm); (material is C to follow hot evaporation second electron transfer layer
70, thickness is 2nm); Evaporation electron injecting layer (material is CsF, and thickness is 10nm) and cathode layer (material is Au, and thickness is 250nm) successively on second electron transfer layer obtain needed electroluminescent device at last at last, and its structure is: IZO glass/V
2O
5/ TAPC/TCTA:Firpic/TPBi/C
70/ CsF/Au.
Earlier AZO glass is carried out photoetching treatment, be cut into needed size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal AZO glass surface; Clean up the back to carrying out suitable processing at the bottom of the AZO glass: oxygen plasma treatment AZO layer, the processing time is 15min, power is 10W; (material is V to the evaporation hole injection layer successively
2O
5, thickness is 80nm), hole transmission layer (material is TAPC, and thickness is 20nm), (material is TAPC:Ir (ppy) to luminescent layer
3, TAPC is material of main part, Ir (ppy)
3Be dopant material, very than being 12%, light emitting layer thickness is 15nm to the doping quality), first electron transfer layer (material is TAZ, and thickness is 55nm); Follow hot evaporation second electron transfer layer (material is PCBM, and thickness is 7nm); At last on second electron transfer layer successively the evaporation electron injecting layer (material is CsN
3, thickness is 7nm) and cathode layer (material is Pt, and thickness is 80nm), obtaining needed electroluminescent device at last, its structure is: AZO glass/V
2O
5/ TAPC/TAPC:Ir (ppy)
3/ TAZ/PCBM/CsN
3/ Pt.
Embodiment 5
Earlier ito glass is carried out photoetching treatment, be cut into needed size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution on ito glass surface; Clean up the back ito glass is carried out suitable processing: oxygen plasma treatment ITO layer, the processing time is 12min, power is 15W; (material is MoO to the evaporation hole injection layer successively
3Thickness is 40nm), (material is NPB to hole transmission layer, thickness is 25nm), (material is TAPC:Firpic to luminescent layer, TAPC is material of main part, Firpic is dopant material, very than being 15%, light emitting layer thickness is 18nm to the doping quality), first electron transfer layer (material is Bphen, and thickness is 70nm); (material is C to follow hot evaporation second electron transfer layer
60, thickness is 7nm); Evaporation electron injecting layer (material is LiF, and thickness is 0.7nm) and cathode layer (material is Ag, and thickness is 120nm) successively on second electron transfer layer obtain needed electroluminescent device at last at last, and its structure is: ito glass/MoO
3/ NPB/TAPC:Firpic/Bphen/C
60/ LiF/Ag.
Earlier AZO glass is carried out photoetching treatment, be cut into needed size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal AZO glass surface; Clean up the back to carrying out suitable processing at the bottom of the AZO glass: oxygen plasma treatment AZO layer, the processing time is 15min, power is 10W; (material is V to the evaporation hole injection layer successively
2O
5, thickness is 80nm), hole transmission layer (material is TAPC, and thickness is 20nm), (material is NPB:Ir (ppy) to luminescent layer
3, NPB is material of main part, Ir (ppy)
3Be dopant material, very than being 12%, light emitting layer thickness is 20nm to the doping quality), first electron transfer layer (material is TAZ, and thickness is 55nm); Follow hot evaporation second electron transfer layer (material is PCBM, and thickness is 7nm); At last on second electron transfer layer successively the evaporation electron injecting layer (material is CsN
3, thickness is 7nm) and cathode layer (material is Pt, and thickness is 80nm), obtaining needed electroluminescent device at last, its structure is: AZO glass/V
2O
5/ TAPC/NPB:Ir (ppy)
3/ TAZ/PCBM/CsN
3/ Pt.
Embodiment 7
Earlier ito glass is carried out photoetching treatment, be cut into needed size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution on ito glass surface; Clean up the back ito glass is carried out suitable processing: oxygen plasma treatment ITO layer, the processing time is 12min, power is 15W; (material is WO to the evaporation hole injection layer successively
3Thickness is 40nm), (material is NPB to hole transmission layer, thickness is 25nm), (material is NPB:Firpic to luminescent layer, NPB is material of main part, Firpic is dopant material, very than being 12%, light emitting layer thickness is 15nm to the doping quality), first electron transfer layer (material is TPBi, and thickness is 70nm); (material is C to follow hot evaporation second electron transfer layer
60, thickness is 7nm); Evaporation electron injecting layer (material is LiF, and thickness is 0.7nm) and cathode layer (material is Ag, and thickness is 120nm) successively on second electron transfer layer obtain needed electroluminescent device at last at last, and its structure is: ito glass/WO
3/ NPB/NPB:Firpic/TPBi/C
60/ LiF/Ag.
Earlier IZO glass is carried out photoetching treatment, be cut into needed size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal IZO glass surface; Clean up the back IZO glass is carried out suitable processing: oxygen plasma treatment IZO layer, the processing time is 5min, power is 50W; (material is WO to the evaporation hole injection layer successively
3, thickness is 20nm), hole transmission layer (material is TCTA, and thickness is 60nm), (material is TAPC:Ir (MDQ) to luminescent layer
2(acac), TAPC is material of main part, Ir (MDQ)
2(acac) be dopant material, very than being 1%, light emitting layer thickness is 2nm to the doping quality), first electron transfer layer (material is TAZ, and thickness is 80nm); (material is C to follow hot evaporation second electron transfer layer
70, thickness is 2nm); Evaporation electron injecting layer (material is LiF, and thickness is 1nm) and cathode layer (material is Au, and thickness is 100nm) successively on second electron transfer layer obtain needed electroluminescent device at last at last, and its structure is: IZO glass/WO
3/ TCTA/TAPC:Ir (MDQ)
2(acac)/TAZ/C
70/ LiF/Au.
Embodiment 9
Earlier ito glass is carried out photoetching treatment, be cut into needed size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal IZO glass surface; Clean up the back IZO glass is carried out suitable processing: oxygen plasma treatment IZO layer, the processing time is 5min, power is 50W; (material is MoO to the evaporation hole injection layer successively
3, thickness is 20nm), hole transmission layer (material is TCTA, and thickness is 60nm), (material is NPB:Ir (MDQ) to luminescent layer
2(acac), NPB is material of main part, Ir (MDQ)
2(acac) be dopant material, very than being 2.5%, light emitting layer thickness is 5nm to the doping quality), first electron transfer layer (material is TPBi, and thickness is 80nm); (material is C to follow hot evaporation second electron transfer layer
60, thickness is 2nm); Evaporation electron injecting layer (material is LiF, and thickness is 1nm) and cathode layer (material is Au, and thickness is 100nm) successively on second electron transfer layer obtain needed electroluminescent device at last at last, and its structure is: ito glass/MoO
3/ TCTA/NPB:Ir (MDQ)
2(acac)/TPBi/C
60/ LiF/Au.
Should be understood that above-mentioned statement at preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, scope of patent protection of the present invention should be as the criterion with claims.
Claims (9)
1. an electroluminescent device is characterized in that, comprises the anode conducting substrate of glass, hole injection layer, hole transmission layer, luminescent layer, first electron transfer layer, second electron transfer layer, electron injecting layer and the cathode layer that stack gradually.
2. electroluminescent device according to claim 1 is characterized in that, described anode conducting glass is selected from indium tin oxide glass, mix the zinc oxide glass of aluminium or mix the zinc oxide glass of indium; The material of described cathode layer is selected from silver, aluminium, platinum or gold; The thickness of described cathode layer is 80～250nm.
3. electroluminescent device according to claim 1 is characterized in that, the material of described hole injection layer is selected from molybdenum trioxide, tungstic acid or vanadic oxide; The thickness of described hole injection layer is 20-80nm.
4. electroluminescent device according to claim 1, it is characterized in that, the material of described hole transmission layer is selected from 1,1-two [4-[N, N '-two (p-tolyl) amino] phenyl] cyclohexane, 4,4 ', 4 " three (carbazole-9-yl) triphenylamine, N; N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine; The thickness of described hole transmission layer is 20-60nm.
5. electroluminescent device according to claim 1 is characterized in that, to be dopant material be doped to the composite material of forming in the material of main part according to the ratio of mass percent 1～20% to the material of described luminescent layer; Wherein, dopant material is selected from two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium, two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and close iridium or three (2-phenylpyridine) and close iridium; Material of main part is selected from 1,1-two [4-[N, N '-two (p-tolyl) amino] phenyl] cyclohexane, 4,4 ', 4 " three (carbazole-9-yl) triphenylamine, N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidines; The thickness of described luminescent layer is 2-30nm.
6. electroluminescent device according to claim 1 is characterized in that, the material of described first electron transfer layer is selected from 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole; The thickness of described first electron transfer layer is 20-60nm.
7. electroluminescent device according to claim 1 is characterized in that, the material of described second electron transfer layer is selected from C
60Or C
70Fullerene or the methyl butyrate derivative of fullerene; The thickness of described second electron transfer layer is 2-10nm.
8. electroluminescent device according to claim 1 is characterized in that, the material of described electron injecting layer is selected from cesium carbonate, cesium fluoride, nitrine caesium or lithium fluoride; The thickness of described electron injecting layer is 0.5-10nm.
9. the preparation method of the described electroluminescent device of claim 1 is characterized in that, comprises the steps;
S1, the anode conducting substrate of glass is carried out photoetching treatment, use liquid detergent, deionized water, acetone, ethanol, each ultrasonic cleaning 15min of isopropyl alcohol subsequently successively, remove organic pollution;
S2, will clean up back antianode electro-conductive glass suprabasil anode layer and carry out oxygen plasma treatment, the processing time is 5-15min, and power is 10-50W;
S3, employing evaporation process stack gradually evaporation hole injection layer, hole transmission layer, luminescent layer, first electron transfer layer, second electron transfer layer, electron injecting layer and cathode layer on the anode layer surface of anode conducting substrate of glass;
After above-mentioned processing step is finished, make electroluminescent device.
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Application publication date: 20130918 |