CN103579518A - Organic light-emitting device and preparation method thereof - Google Patents
Organic light-emitting device and preparation method thereof Download PDFInfo
- Publication number
- CN103579518A CN103579518A CN201210264211.7A CN201210264211A CN103579518A CN 103579518 A CN103579518 A CN 103579518A CN 201210264211 A CN201210264211 A CN 201210264211A CN 103579518 A CN103579518 A CN 103579518A
- Authority
- CN
- China
- Prior art keywords
- layer
- thickness
- organic electroluminescence
- electroluminescence device
- electron transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention belongs to the field of organic semiconductor materials, and discloses an organic light-emitting device and a preparation method of the organic light-emitting device. The organic light-emitting device comprises an anode substrate, a hole injection layer, a hole transfer layer, a light-emitting layer, a first electron transfer layer, a spacer layer, an auxiliary electron transfer layer, an electron injection layer and a cathode layer, wherein the anode substrate, the hole injection layer, the hole transfer layer, the light-emitting layer, the first electron transfer layer, the spacer layer, the auxiliary electron transfer layer, the electron injection layer and the cathode layer are stacked in sequence. The spacer layer is made of a doped mixed material composed of a hole barrier material doped with phthalocyanines compounds. According to the organic light-emitting device, the doped spacer layer is prepared between the first electron transfer layer and the auxiliary electron transfer layer, the phthalocyanines compounds which are prone to crystallization and the host material are used for doping and mixing preparation, a crystalline thin film is formed in the process that the phthalocyanines compounds which are prone to crystallization are slowly crystallized, the crystalline thin film can be used for scattering light, as a result, photon directions can be redistributed, the light can return to the bottom of the device to be emitted outward, the light extraction efficiency of the device is improved, and the luminous efficiency of the device is also improved.
Description
Technical field
The present invention relates to organic semiconducting materials, relate in particular to a kind of organic electroluminescence device and preparation method thereof.
Background technology
The C.W.Tang of 1987 Nian， U.S. Eastman Kodak companies and VanSlyke have reported the breakthrough in organic electroluminescent research.Utilize ultrathin film technology to prepare high brightness, high efficiency double-deck organic electroluminescence device (OLED).In this double-deck device, under 10V, brightness reaches 1000cd/m
2, its luminous efficiency is 1.51lm/W, life-span to be greater than 100 hours.
The principle of luminosity of OLED is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from ground state transition to excitation state, excited energy, by Radiation-induced deactivation, produces photon, discharges luminous energy.
In traditional luminescent device, generally to prepare the transmission rate that one deck electron transfer layer improves electronics, prepare again the injection efficiency that one deck electron injecting layer improves electronics, and the transmission rate of electronics is conventionally than low two or three orders of magnitude of the transmission rate in hole, therefore, conventionally be all that electron transfer layer is carried out to n doping, that is to say electron transfer layer is carried out metal-doped, if Cs salt dopping is in Bphen, Li salt dopping is in TPBi, improve electric transmission speed, this method adopts more, and can effectively improve electric transmission speed, but, the amplitude that speed improves is not high, and thickness can not be done to obtain too thin (lower than 40nm), when luminescent material and metal electrode approach, luminescent material can produce coupling with metal electrode, exciton has been caused to loss (surface plasmon wave), thickness too thick (higher than 100nm), defect increases, the existence of electron trap, can make electronics or hole enter in trap, cause exciton recombination probability to reduce, all these so have influence on the raising of electric transmission speed, also just caused luminous efficiency low.
Summary of the invention
Problem to be solved by this invention is to provide a kind of organic electroluminescence device that can improve luminous efficiency.
Technical scheme of the present invention is as follows:
, comprise the anode substrate, hole injection layer, hole transmission layer, luminescent layer, the first electron transfer layer, wall, auxiliary electron transport layer, electron injecting layer and the cathode layer that stack gradually; The material of described wall is that phthalocyanine-like compound is doped to the doping composite material forming in material of main part according to the ratio of mass percent 1 ~ 10%; Described material of main part is that P-bis-(triphenyl silicon) benzene, three (1-Phenylpyrazole) closes iridium, C
60derivative or C
70derivative, described phthalocyanine-like compound is CuPc, Phthalocyanine Zinc, magnesium phthalocyanine or phthalocyanine vanadium; And the thickness of this wall is 5-20nm.Wherein, material of main part is hole barrier materials, and it can stop tunneled holes to arrive electronics on one side, thereby by electrode cancellation, makes hole at light-emitting zone and electronics, carry out recombination luminescence as much as possible, improves the luminous efficiency of device.
Described organic electroluminescence device, wherein, described anode substrate is indium tin oxide glass, mix the zinc oxide glass of aluminium or mix the zinc oxide glass of indium.
Described organic electroluminescence device, wherein, the material of described hole injection layer is molybdenum trioxide, tungstic acid or vanadic oxide; The thickness of this hole injection layer is 20-60nm.
Described organic electroluminescence device, wherein, the material of described hole transmission layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4 ＂-tri-(carbazole-9-yl) triphenylamine, N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine; The thickness of this hole transmission layer is 20-60nm.
Described organic electroluminescence device, wherein, the material of described luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl or oxine aluminium; The thickness of this luminescent layer is 5-40nm.
Described organic electroluminescence device, wherein, the material of the material of described the first electron transfer layer and auxiliary electron transport layer is 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole; The thickness of described the first electron transfer layer is 40 ~ 80nm; The thickness of described auxiliary electron transport layer is 40-100nm.
Described organic electroluminescence device, wherein, the material of described electron injecting layer is cesium carbonate, cesium fluoride, nitrine caesium or lithium fluoride; The thickness of this electron injecting layer is 0.5-10nm.
Described organic electroluminescence device, wherein, the material of described cathode layer is silver, aluminium, platinum or gold; The thickness of this cathode layer is 80-250nm.
The present invention also provides the preparation method of above-mentioned organic electroluminescence device, comprises the steps:
S1, first anode substrate is carried out to photoetching treatment, then use successively liquid detergent, deionized water, acetone, ethanol, each ultrasonic cleaning of isopropyl alcohol 15min, removes the organic pollution on anode substrate surface;
S2, the anode substrate after cleaning up is carried out to oxygen plasma treatment, the processing time is 5-15min, and the power of processing is 10-50W;
S3, on anode substrate surface, stack gradually evaporation hole injection layer, hole transmission layer, luminescent layer and the first electron transfer layer;
S4, utilize hot evaporation process, the wall that is 5 ~ 20nm at described the first electron transfer layer surface evaporation thickness, the material of described wall is that phthalocyanine-like compound is doped to the doping composite material forming in material of main part according to the ratio of mass percent 1 ~ 10%; Described material of main part is that P-bis-(triphenyl silicon) benzene, three (1-Phenylpyrazole) closes iridium, C
60derivative or C
70derivative;
S5, then evaporation auxiliary electron transport layer, electron injecting layer and cathode layer successively on the surface of wall;
Finally, after above-mentioned processing step completes, make organic electroluminescence device.
Organic electroluminescence device provided by the invention, it by preparing the wall of one deck doping between the first electron transfer layer and auxiliary electron transport layer, utilizing the phthalocyanine-like compound of easy crystallization and material of main part to adulterate is mixed with, in the slow crystallization process of phthalocyanine-like compound of easily crystallization, making the molecule of wall carry out crystallization rearranges, realize stacking, form crystalloid film, when light passes through film, can carry out scattering, thereby make the redistribution of photon direction get back to device bottom outgoing, reach the light taking-up efficiency that improves device, and use hole barrier materials as material of main part, can stop tunneled holes to arrive electronics on one side, thereby by electrode cancellation, make hole at light-emitting zone and electronics, carry out recombination luminescence as much as possible, improve the luminous efficiency of device.
Accompanying drawing explanation
Fig. 1 is the organic electroluminescence device structural representation that the present invention makes;
Fig. 2 is luminous efficiency and the brightness relationship figure of the organic electroluminescence device that makes of the organic electroluminescence device that makes of embodiment 1 and comparative example 1; Wherein, curve 1 represents the luminous efficiency that has electroluminescent device and the brightness relationship curve that embodiment 1 makes; Curve 2 represents the luminous efficiency that has electroluminescent device and the brightness relationship curve that comparative example 1 makes.
Embodiment
Organic electroluminescence device provided by the invention, as shown in Figure 1, comprise anode substrate 101, hole injection layer 102, hole transmission layer 103, luminescent layer 104, the first electron transfer layer 105, wall 106, auxiliary electron transport layer 107, electron injecting layer 108 and cathode layer 109; The material of this wall 106 is that phthalocyanine-like compound is doped to the doping composite material forming in material of main part according to the ratio of mass percent 1 ~ 10%; Described material of main part is P-bis-(triphenyl silicon) benzene (UGH2), and three (1-Phenylpyrazoles) close iridium (Ir (ppz)
3), C
60derivative (as, PC
61bM) or C
70derivative (as, PC
71bM), described phthalocyanine-like compound is CuPc (CuPc), Phthalocyanine Zinc (ZnPc), magnesium phthalocyanine (MgPc) and phthalocyanine vanadium (V
2pc
5); And the thickness of this wall is 5-20nm, preferred thickness is 10nm.C
60represent to contain 60 carbon atoms, C
70represent to contain 70 carbon atoms.
Wherein, material of main part is the hole barrier materials of high HOMO energy level value (higher than 6.0eV), and it can stop tunneled holes to arrive electronics on one side, thereby by electrode cancellation, make hole at light-emitting zone and electronics, carry out recombination luminescence as much as possible, improve the luminous efficiency of device.
In above-mentioned organic electroluminescence device, material and the thickness of other functional layer are as follows:
The material of hole injection layer 102 is molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2o
5), be preferably WO
3; The thickness of hole injection layer 102 is 20-80nm, and preferred thickness is 40nm;
The material of hole transmission layer 103 is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4 ＂-tri-(carbazole-9-yl) triphenylamine (TCTA), N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), is preferably NPB; The thickness of hole transmission layer 103 is 20-60nm, and preferred thickness is 40nm;
The material of luminescent layer 104 is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) or oxine aluminium (Alq
3), preferred Alq
3; The thickness of luminescent layer 104 is 5-40nm, and thickness is preferably 15nm;
The material of the material of the first electron transfer layer 105 and auxiliary electron transport layer 107 all adopts 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and 4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBi), be preferably TAZ; The thickness of the first electron transfer layer 105 is 40 ~ 80nm; The thickness of auxiliary electron transport layer 107 is 40-100nm, and both preferred thickness are 60nm; The material of the first electron transfer layer 105 is TAZ preferably, the preferred TPBi of material of auxiliary electron transport layer 107;
The material of electron injecting layer 108 is cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF), be preferably CsF; The thickness of electron injecting layer 108 is 0.5-10nm, and preferred thickness is 2nm;
The material of cathode layer 109 is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au), is preferably Ag; The thickness of cathode layer 109 is 80-250nm, and preferred thickness is 150nm.
The preparation method of above-mentioned organic electroluminescence device, comprises the steps:
S1, first anode substrate is carried out to photoetching treatment, be cut into needed size, then clean: use successively liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, removes the organic pollution on anode substrate surface;
S2, the conductive anode layer of the anode substrate after cleaning up is carried out to oxygen plasma treatment, to improve the work function of the conductive anode layer of anode substrate, the processing time is 5-15min, and processing power is 10-50W;
S3, in the conductive anode layer of anode substrate layer evaporation hole injection layer, hole transmission layer, luminescent layer and the first electron transfer layer successively;
S4, then on the first electron transfer layer surface, adopt hot evaporation wall, the material of this wall is that phthalocyanine-like compound is doped to the doping composite material forming in material of main part according to the ratio of mass percent 1 ~ 10%; Described material of main part is P-bis-(triphenyl silicon) benzene (UGH2), and three (1-Phenylpyrazoles) close iridium (Ir (ppz)
3), C
60derivative (PC
61bM) or C
70derivative (PC
71bM), described phthalocyanine-like compound is CuPc (CuPc), Phthalocyanine Zinc (ZnPc), magnesium phthalocyanine (MgPc) and phthalocyanine vanadium (V
2pc
5); And the thickness of this wall is 5-20nm;
S5, then on wall surface, stack gradually evaporation auxiliary electron transport layer, electron injecting layer and cathode layer;
Finally, after above-mentioned steps completes, make organic electroluminescence device.
In above-mentioned preparation technology, the evaporation of step S3 ~ S5 is vacuum thermal resistance evaporation, and pressure is 2 * 10
-3-2 * 10
-5pa.
Organic electroluminescence device provided by the invention, it by preparing the wall of one deck doping between the first electron transfer layer and auxiliary electron transport layer, utilizing the phthalocyanine-like compound of easy crystallization and material of main part to adulterate is mixed with, in the slow crystallization process of phthalocyanine-like compound of easily crystallization, making the molecule of wall carry out crystallization rearranges, realize stacking, form crystalloid film, when light passes through film, can carry out scattering, thereby make the redistribution of photon direction get back to device bottom outgoing, reach the light taking-up efficiency that improves device, and use hole barrier materials as material of main part, can stop tunneled holes to arrive electronics on one side, thereby by electrode cancellation, make hole at light-emitting zone and electronics, carry out recombination luminescence as much as possible, improve the luminous efficiency of device.
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Following embodiment and comparative example, its preparation with test instrument used is: high vacuum coating equipment (scientific instrument development center, Shenyang Co., Ltd, pressure <1 * 10
-32602), electroluminescent spectrum tester (U.S. photo research company, model: PR650) and screen intensity meter (Beijing Normal University, model: ST-86LA) Pa), current-voltage tester (U.S. Keithly company, model:.
Embodiment 1
First ito glass is used to liquid detergent successively, deionized water, ultrasonic 15min, removes the organic pollution on ito glass surface, cleans up the rear ITO layer to ito glass and carries out oxygen plasma treatment, and the processing time is 5min, and power is 50W;
Secondly, the ITO layer surface after oxygen plasma treatment stacks gradually evaporation hole injection layer: material is WO
3, thickness is 40nm; Hole transmission layer: material is NPB, thickness is 40nm; Luminescent layer: material is Alq
3, thickness is 15nm; The first electron transfer layer, material is TAZ, thickness is 60nm;
Then hot evaporation wall, material is that CuPc is doped to Ir (ppz)
3in, be expressed as CuPc:Ir (ppz)
3, CuPc doping quality is very than being 5%, thickness is 5nm;
Then on wall surface, stack gradually evaporation auxiliary electron transport layer, material is TPBi, and thickness is 60nm; Electron injecting layer, material is LiF, and thickness is 2nm and cathode layer, and material is Ag, and thickness is 150nm;
Finally obtain needed organic electroluminescence device, its structure is: glass/ITO/WO
3/ NPB/Alq
3/ TAZ/CuPc:Ir (ppz)
3/ TPBi/LiF/Ag.
First AZO glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal AZO glass surface, cleans up the rear AZO layer to AZO glass and carries out oxygen plasma treatment, and the processing time is 15min, and power is 10W;
AZO layer surface after oxygen plasma treatment stacks gradually evaporation hole injection layer subsequently: material is MoO
3, thickness is 20nm; Hole transmission layer: material is TAPC, thickness is 80nm; Luminescent layer: material is BCzVBi, thickness is 40nm; The first electron transfer layer, material is TPBi, thickness is 40nm;
Then hot evaporation wall, material is that ZnPc is doped in UGH2, is expressed as ZnPc:UGH2, and ZnPc doping quality is very than being 1%, and thickness is 5nm;
Then on wall surface, stack gradually evaporation auxiliary electron transport layer, material is TAZ, and thickness is 20nm; Electron injecting layer, material is Cs
2cO
3, thickness is 10nm; And cathode layer, material is Au, thickness is 80nm;
Finally obtain needed organic electroluminescence device, its structure is: glass/AZO/MoO
3/ TAPC/BCzVBi/TPBi/ZnPc:UGH2/TAZ/Cs
2cO
3/ Au.
Embodiment 3
First ito glass is used to liquid detergent successively, deionized water, ultrasonic 15min, removes the organic pollution on ito glass surface, cleans up the rear ITO layer to ito glass and carries out oxygen plasma treatment, and the processing time is 10min, and power is 30W;
ITO layer surface after oxygen plasma treatment stacks gradually evaporation hole injection layer subsequently: material is WO
3, thickness is 80nm; Hole transmission layer: material is TCTA, thickness is 20nm; Luminescent layer: material is DCJTB, thickness is 5nm; The first electron transfer layer, material is TAZ, thickness is 40nm;
Then hot evaporation wall, material is V
2pc
5be doped in UGH2, be expressed as V
2pc
5: UGH2, V
2pc
5doping quality is very than being 10%, and thickness is 20nm;
Then on wall surface, stack gradually evaporation auxiliary electron transport layer, material is Bphen, and thickness is 80nm; Electron injecting layer, material is CsN
3, thickness 0.5nm; And negative electrode, material is Al, thickness is 250nm;
Finally obtain needed organic electroluminescence device, its structure is: glass/ITO/WO
3/ TCTA/DCJTB/TAZ/V
2pc
5: PC
61bM/Bphen/CsN
3/ Al.
Embodiment 4
First IZO glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal IZO glass surface, cleans up the rear ITO layer to IZO glass and carries out oxygen plasma treatment, and the processing time is 12min, and power is 20W;
ITO layer surface after oxygen plasma treatment stacks gradually evaporation hole injection layer subsequently: material is V
2o
5, thickness is 25nm; Hole transmission layer: material is NPB, thickness is 55nm; Luminescent layer: material is ADN, thickness is 10nm; The first electron transfer layer, material is Bphen, thickness is 45nm;
Then hot evaporation wall, material is that MgPc is doped to PC
71in BM, be expressed as MgPc:PC
71bM, MgPc doping quality is very than being 7%, thickness is 8nm;
Then, stack gradually evaporation auxiliary electron transport layer on wall surface, material is Bphen, and thickness is 65nm; Electron injecting layer, material is CsF, thickness is 0.5nm; And cathode layer, material is Pt, thickness is 100nm;
Finally obtain needed organic electroluminescence device, its structure is: glass/IZO/V
2o
5/ NPB/MgPc:PC
71bM/Bphen/MgPc:PC
71bM/Bphen/CsF/Pt.
Comparative example 1
Please inventor according to the flow process of embodiment 1, improve this embodiment.
First ito glass is used to liquid detergent successively, deionized water, ultrasonic 15min, removes the organic pollution on ito glass surface, cleans up the rear ITO layer to ito glass and carries out oxygen plasma treatment, and the processing time is 5min, and power is 50W;
Secondly, the ITO layer surface after oxygen plasma treatment stacks gradually evaporation hole injection layer: material is WO
3, thickness is 40nm; Hole transmission layer: material is NPB, thickness is 40nm; Luminescent layer: material is Alq
3, thickness is 15nm; The first electron transfer layer, material is TAZ, thickness is 60nm; Follow evaporation auxiliary electron transport layer, material is TPBi, and thickness is 60nm; Electron injecting layer, material is LiF, thickness is 2nm; And cathode layer, material is Ag, thickness is 150nm;
Finally make organic electroluminescence device, its structure is: glass/ITO/WO
3/ NPB/Alq
3/ TAZ/TPBi/LiF/Ag
Fig. 2 is luminous efficiency and the brightness relationship figure of the organic electroluminescence device that makes of the organic electroluminescence device that makes of embodiment 1 and comparative example 1; Wherein, curve 1 represents the luminous efficiency that has electroluminescent device and the brightness relationship curve that embodiment 1 makes; Curve 2 represents the luminous efficiency that has electroluminescent device and the brightness relationship curve that comparative example 1 makes.
From accompanying drawing 2, can see, under different brightness, the luminous efficiency of the organic electroluminescence device that embodiment 1 makes is all large than the luminous efficiency of the organic electroluminescence device making of comparative example 1, maximum luminous efficiency is 21.0lm/W, and that comparative example 1 is only 15.6lm/W, this explanation, the wall of preparing one deck doping between the first electron transfer layer and auxiliary electron transport layer, utilizing the phthalocyanine-like compound of easy crystallization and material of main part to adulterate is mixed with, in the slow crystallization process of phthalocyanine-like compound of easily crystallization, making the molecule of wall carry out crystallization rearranges, realize stacking, form crystalloid film, when light passes through film, can carry out scattering, thereby make the redistribution of photon direction get back to device bottom outgoing, reach the light taking-up efficiency that improves device, and use hole barrier materials as material of main part, can stop tunneled holes to arrive electronics on one side, thereby by electrode cancellation, make hole at light-emitting zone and electronics, carry out recombination luminescence as much as possible, improve the luminous efficiency of device.
Should be understood that, the above-mentioned statement for preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, and scope of patent protection of the present invention should be as the criterion with claims.
Claims (10)
1. an organic electroluminescence device, is characterized in that, comprises the anode substrate, hole injection layer, hole transmission layer, luminescent layer, the first electron transfer layer, wall, auxiliary electron transport layer, electron injecting layer and the cathode layer that stack gradually; The material of described wall is that phthalocyanine-like compound is doped to the doping composite material forming in material of main part according to the ratio of mass percent 1 ~ 10%; Described material of main part is that P-bis-(triphenyl silicon) benzene, three (1-Phenylpyrazole) closes iridium, C
60derivative or C
70derivative, and the thickness of this wall is 5-20nm.
2. organic electroluminescence device according to claim 1, is characterized in that, described phthalocyanine-like compound is CuPc, Phthalocyanine Zinc, magnesium phthalocyanine or phthalocyanine vanadium.
3. organic electroluminescence device according to claim 1, is characterized in that, described anode substrate is indium tin oxide glass, mix the zinc oxide glass of aluminium or mix the zinc oxide glass of indium.
4. organic electroluminescence device according to claim 1, is characterized in that, the material of described hole injection layer is molybdenum trioxide, tungstic acid or vanadic oxide; The thickness of this hole injection layer is 20-60nm.
5. organic electroluminescence device according to claim 1, it is characterized in that, the material of described hole transmission layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4 ＂-tri-(carbazole-9-yl) triphenylamine, N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine; The thickness of this hole transmission layer is 20-60nm.
6. organic electroluminescence device according to claim 1, it is characterized in that, the material of described luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl or oxine aluminium; The thickness of this luminescent layer is 5-40nm.
7. organic electroluminescence device according to claim 1, is characterized in that, the material of the material of described the first electron transfer layer and auxiliary electron transport layer is 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole; The thickness of described the first electron transfer layer is 40 ~ 80nm; The thickness of described auxiliary electron transport layer is 40-100nm.
8. organic electroluminescence device according to claim 1, is characterized in that, the material of described electron injecting layer is cesium carbonate, cesium fluoride, nitrine caesium or lithium fluoride; The thickness of this electron injecting layer is 0.5-10nm.
9. organic electroluminescence device according to claim 1, is characterized in that, the material of described cathode layer is silver, aluminium, platinum or gold; The thickness of this cathode layer is 80-250nm.
10. the preparation method of organic electroluminescence device claimed in claim 1, is characterized in that, comprises the steps:
S1, first anode substrate is carried out to photoetching treatment, then use successively liquid detergent, deionized water, acetone, ethanol, each ultrasonic cleaning of isopropyl alcohol 15min, removes the organic pollution on anode substrate surface;
S2, the anode substrate after cleaning up is carried out to oxygen plasma treatment, the processing time is 5-15min, and the power of processing is 10-50W;
S3, on anode substrate surface, stack gradually evaporation hole injection layer, hole transmission layer, luminescent layer and the first electron transfer layer;
S4, utilize hot evaporation process, the wall that is 5 ~ 20nm at described the first electron transfer layer surface evaporation thickness, the material of described wall is that phthalocyanine-like compound is doped to the doping composite material forming in material of main part according to the ratio of mass percent 1 ~ 10%; Described material of main part is that P-bis-(triphenyl silicon) benzene, three (1-Phenylpyrazole) closes iridium, C
60derivative or C
70derivative;
S5, then evaporation auxiliary electron transport layer, electron injecting layer and cathode layer successively on the surface of wall;
Finally, after above-mentioned processing step completes, make organic electroluminescence device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210264211.7A CN103579518A (en) | 2012-07-27 | 2012-07-27 | Organic light-emitting device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210264211.7A CN103579518A (en) | 2012-07-27 | 2012-07-27 | Organic light-emitting device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103579518A true CN103579518A (en) | 2014-02-12 |
Family
ID=50050856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210264211.7A Pending CN103579518A (en) | 2012-07-27 | 2012-07-27 | Organic light-emitting device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103579518A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106936059A (en) * | 2017-04-06 | 2017-07-07 | 上海大学 | Transmitting organic laser thin-film device with the enhanced optical pumping face of gold nano grain, using and preparation method thereof |
| CN108807684A (en) * | 2018-07-09 | 2018-11-13 | 南方科技大学 | Organic photoelectric transistor and preparation method thereof |
| CN113777901A (en) * | 2021-09-08 | 2021-12-10 | 上海交通大学 | Liquid crystal thin film device doped with organic small molecule donor material and display device |
| CN115004387A (en) * | 2020-01-14 | 2022-09-02 | 金勋 | Surface plasmon photonics electric field enhanced photodetector and image sensor using light absorbing layer with split conduction band |
-
2012
- 2012-07-27 CN CN201210264211.7A patent/CN103579518A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106936059A (en) * | 2017-04-06 | 2017-07-07 | 上海大学 | Transmitting organic laser thin-film device with the enhanced optical pumping face of gold nano grain, using and preparation method thereof |
| CN108807684A (en) * | 2018-07-09 | 2018-11-13 | 南方科技大学 | Organic photoelectric transistor and preparation method thereof |
| CN108807684B (en) * | 2018-07-09 | 2021-12-24 | 南方科技大学 | Organic photoelectric transistor and preparation method thereof |
| CN115004387A (en) * | 2020-01-14 | 2022-09-02 | 金勋 | Surface plasmon photonics electric field enhanced photodetector and image sensor using light absorbing layer with split conduction band |
| CN113777901A (en) * | 2021-09-08 | 2021-12-10 | 上海交通大学 | Liquid crystal thin film device doped with organic small molecule donor material and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103579518A (en) | Organic light-emitting device and preparation method thereof | |
| CN103579519A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN102983280A (en) | Organic electroluminescence device and preparation method thereof | |
| CN103579526A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN103456895A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN104518150A (en) | Organic electroluminescent device and method for preparing same | |
| CN103456894A (en) | Organic electroluminescent device and manufacturing method thereof | |
| CN104037344A (en) | Stacked organic light emitting device and preparation method thereof | |
| CN104183778A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103972420A (en) | Organic light-emitting device and method for manufacturing same | |
| CN103579527A (en) | Organic light-emitting device and preparation method thereof | |
| CN103456898A (en) | Top-emitting organic electroluminescent device and producing method thereof | |
| CN104051641A (en) | Laminated organic electroluminescent device and manufacturing method thereof | |
| CN103972421A (en) | Organic light-emitting device and production method thereof | |
| CN104518108A (en) | Organic electroluminescent device and method for preparing same | |
| CN104037326A (en) | Stacked organic light emitting device and preparation method | |
| CN104518102A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104051642A (en) | Laminated organic electroluminescent device and manufacturing method thereof | |
| CN104518145A (en) | Organic electroluminescent device and method for preparing same | |
| CN104518148A (en) | Organic electroluminescent device and method for preparing same | |
| CN103579516A (en) | Inverted bottom-emitting organic electroluminescence device and manufacturing method thereof | |
| CN103972408A (en) | Organic light-emitting device and method for manufacturing same | |
| CN103378299A (en) | Organic light-emitting device and preparing method thereof | |
| CN103579511A (en) | Inverted top-emitting organic electroluminescence device and manufacturing method thereof | |
| CN103682129A (en) | Top-emitting organic electroluminescent device and manufacture method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140212 |