CN103296881B - Switching circuit capable of automatically generating positive voltage or negative voltage - Google Patents
Switching circuit capable of automatically generating positive voltage or negative voltage Download PDFInfo
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- CN103296881B CN103296881B CN201310195031.2A CN201310195031A CN103296881B CN 103296881 B CN103296881 B CN 103296881B CN 201310195031 A CN201310195031 A CN 201310195031A CN 103296881 B CN103296881 B CN 103296881B
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- 238000004146 energy storage Methods 0.000 claims abstract description 51
- 230000005669 field effect Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 230000005611 electricity Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000000872 buffer Substances 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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Abstract
The invention relates to a switching circuit capable of automatically generating positive voltage or negative voltage, which receives a power supply from a first end of a first switch, and a second end of the first switch is coupled with a first end of an energy storage element. A first terminal of a second switch is coupled to a second terminal of the energy storage element, and a second terminal of the second switch receives a reference potential. A first terminal of a third switch is coupled to an input terminal, and a second terminal of the third switch is coupled to the first terminal of the energy storage element. A first terminal of a fourth switch is coupled to the second terminal of the energy storage element, and a second terminal of the fourth switch is coupled to an output terminal. Therefore, an ultrahigh voltage-resistant component is not needed, and an extra power supply is not needed, so that the aims of saving the circuit area and saving the cost are fulfilled.
Description
Technical field
The invention relates to a kind of switching circuit, its a kind of switching electricity that can produce positive voltage or negative voltage voluntarily
Road.
Background technology
Liquid crystal indicator applies the display device as personal computer etc. widely.Liquid crystal indicator has liquid crystal
Display floater and in order to drive the drive circuit of display panels.Display panels makes two plate bases relative, in this two panels
Retention gap between substrate, and liquid-crystal composition is enclosed formation behind this gap.The substrate forming display panels has pixel
Electrode and counter electrode.Between pixel electrode and counter electrode, apply voltage, can make to be present between pixel electrode and counter electrode
The alignment direction of liquid crystal molecule change, and then make the light transmittance of display panels change: to utilize this light transmittance
Change shows.In the liquid crystal indicator of TFT formula, each pixel electrode is respectively provided with switch module, utilizes this switches set
Voltage is supplied to pixel electrode by part.
Known TFT formula liquid crystal indicator has: the liquid crystal indicator of longitudinal electric field formula, it makes pixel electrode be located at one
On the substrate of side, counter electrode is located on the substrate of opposite side；And the liquid crystal indicator of transverse electric field formula, it is by pixel electrode
And counter electrode is arranged on the substrate of the same side.
It is intended to the voltage applied on the pixel electrode be sent to, near pixel electrode, be connected to switches set via signal of video signal line
Part.Additionally, the signal making switch module carry out ON/OFF action is supplied by scan signal line.In TFT formula liquid crystal indicator, shadow
Image signal line such as extension and the plural number bar that be arranged in parallel in the transverse direction on longitudinal direction.Additionally, scan signal line is believed with image
Number line intersects, and extend and be arranged in parallel on longitudinal direction plural number bar in the transverse direction.Not yet, by adjacent 2 signal of video signal lines
And in 2 the scan signal line area defined intersected with this signal of video signal line, it is formed with pixel electrode.This pixel electrode is joined
It is set to rectangular and forms viewing area.Viewing area be formed around drive circuit, in order to transmit signals to image letter
Number line and scan signal line.
For in response to mankind's demand to color, liquid crystal display reaches the purpose of colorization by colored filter, and for
The requirement of multicolour i.e. must distinguish the light and shade of each color via the number of liquid crystal transmittance.The typically voltage of our citation
It will be seen that with the relation of transmittance, different transmittances must be provided by different current potentials, therefore the required mat of driving chip
Various different GTG (grayscale) is reached by some distinct methods.Common method has pulse width modulation method
(Pulse Width Modulation, PWM), pulse height modulation method (Amplitude Modulation, AM or Pulse
Height Modulation, PHM), and picture frame modulation method (Frame Modulation, FM or Frame Rate Control,
Or this several method mixed FRC),.
In order to reduce the power consumption of liquid crystal indicator further, belong to Alt-Preshko Technique (APT) driving side
The drive waveforms of High-Frequency Amplitude Selection (Hi-FAS) of formula is also suggested, and utilizes raising less
The voltage of the COM signal of switching, reduces the voltage of the relatively often SEG signal of switching, reaches the effect of power saving.Low owing to using again
Pressure assembly, at the more SEG of signal line number, also can reach to save the purpose of chip IC cost.
But, the liquid crystal display of the Hi-FAS framework of existing built-in electric capacity is due to the problem of signal thrust, in large scale
Panel there may be the problem that driving force is not enough, it is therefore necessary to have the application that client's applied voltage can be provided.And Hi-
In FAS framework, the voltage of COM signal has positive voltage and negative voltage, and FPC system end is only provided that a positive voltage, so
Must additionally use a power supply unit to produce a negative voltage, i.e. need the power supply unit using more than two to provide positive electricity
Pressure and negative voltage, so, it will increase circuit area, and then increase cost.
Furthermore, owing to flexible circuit board (FPC) system end is only provided that positive voltage, and the voltage of COM signal has positive electricity
Pressure and negative voltage, so, COM signal generating circuit have to possess positive voltage pressure that can bear FPC system end, example
As FPC system end produce positive voltage be 50V time, make COM signal generating circuit can produce positive voltage+25V and negative voltage-
25V, but the assembly within COM signal generating circuit must can bear the pressure of 50V, and need to use high pressure assembly, enter
And increase FPC circuit area and cost.
Therefore, how to propose a kind of novelty for the problems referred to above and can produce the switching electricity of positive voltage or negative voltage voluntarily
Road, it can produce positive voltage or negative voltage use a power supply unit without extra more voluntarily, and need not use
High pressure assembly, and then save circuit area and cost.
Summary of the invention
An object of the present invention, is to provide a kind of switching circuit that can produce positive voltage or negative voltage voluntarily, and it can
According to the positive voltage received or negative voltage, correspondence produces negative voltage or positive voltage voluntarily, without one electricity of extra many uses
Source supply, and then reach the purpose saving circuit area with cost.
An object of the present invention, is to provide a kind of switching circuit that can produce positive voltage or negative voltage voluntarily, its mat
By controlling plural number switch conduction or cut-off and need not use the pressure assembly of superelevation, and then save circuit area and cost.
The switching circuit that can produce positive voltage or negative voltage voluntarily of the present invention comprise one first switch, a second switch,
One the 3rd switch and one the 4th switch.First switch has one first end and one second end, and the first end receives a power supply, and first opens
The second end closed couples one first end of an energy-storage travelling wave tube.Second switch has one first end and one second end, second switch
First end couples one second end of energy-storage travelling wave tube, and the second end of second switch receives a reference potential, and the 3rd switch has one the
One end and one second end, the first end of the 3rd switch couples an input, and the second end of the 3rd switch couples the of energy-storage travelling wave tube
One end.4th switch has one first end and one second end, and the 4th the first end switched couples the second end of energy-storage travelling wave tube, and the 4th
Second end of switch couples an outfan.So, the present invention is by controlling plural number switch conduction or cut-off and need not use
Superelevation is pressure assembly, and then save circuit area and cost.Furthermore, the present invention can be right according to the positive voltage received or negative voltage
Negative voltage or positive voltage should be produced voluntarily, use a power supply unit without extra, and then reach to save circuit area
Purpose with cost.
Enforcement the beneficial effect comprise that: the switching electricity that can produce positive voltage or negative voltage voluntarily of the present invention
Road, it receives a power supply by one first end of one first switch, and one second end of the first switch couples the one the of an energy-storage travelling wave tube
One end.One first end of one second switch couples one second end of energy-storage travelling wave tube, and one second end of second switch receives a reference
Current potential.One first end of one the 3rd switch couples an input, and one second end of the 3rd switch couples the first end of energy-storage travelling wave tube.
One first end of one the 4th switch couples the second end of energy-storage travelling wave tube, and one second end of the 4th switch couples an outfan.So,
Need not use high pressure assembly, and need not additionally use a power supply unit, so reach save circuit area with
The purpose of cost.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the switching circuit of the first embodiment of the present invention；
Fig. 2 is the circuit diagram that the switching circuit of the present invention is applied to display driver circuit；
Fig. 3 is the circuit diagram of the switching circuit of the second embodiment of the present invention；
Fig. 4 is the profile of the switching circuit of Fig. 3；
Fig. 5 is the circuit diagram of the switching circuit of the third embodiment of the present invention；
Fig. 6 is the profile of the switching circuit of Fig. 5；
Fig. 7 is the circuit diagram of the switching circuit of the fourth embodiment of the present invention；
Fig. 8 is the circuit diagram of the switching circuit of the fifth embodiment of the present invention.
[figure number is to as directed]
1 switching circuit 10 first switch
12 first N-type well 14 first p-type doped regions
16 second p-type doped region 18 first grid layers
19 first n-type doping district 20 second switches
22 second N-type well 23 second p type wellses
220 the 7th n-type doping districts of n-type doping district 24 second
26 the 3rd n-type doping district 28 second grid floor
29 the 5th p-type doped region 30 the 3rd switches
32 the 3rd N-type well 34 the 3rd p-type doped regions
36 the 4th p-type doped region 38 the 3rd grid layers
39 the 4th n-type doping district 40 the 4th switches
42 the 4th N-type well 420 the 8th n-type doping districts
43 the 3rd p type wells 44 the 5th n-type doping districts
46 the 6th n-type doping district 48 the 4th grid layers
49 the 6th p-type doped region 50 energy-storage travelling wave tubes
6 low-voltage difference linear constant voltage regulator 62 first bleeder circuits
64 manostat 640 operational amplifiers
642 output switch 66 second bleeder circuits
67 the 3rd bleeder circuit 68 charge pumps
680 first switching switch 681 second switching switches
682 first electric capacity 683 first control switch
684 second control switch 685 the 3rd control switch
686 the 4th control switch 687 buffers
688 second electric capacity 689 the 5th control switch
690 the 6th control switch 69 first comparators
691 the 7th control switch 692 the 8th control switch
70 P-type substrate 72 first p type wellses
82 the 5th N-type well 820 the 11st n-type doping districts
83 the 4th p type wells 84 the 9th n-type doping districts
86 the tenth n-type doping district 88 the 5th grid layers
89 the 8th p-type doped regions
Detailed description of the invention
In order to the architectural feature making the present invention and effect of being reached have a better understanding and awareness, special with preferably
Embodiment and cooperation detailed description, be described as follows:
Refer to Fig. 1, for the circuit diagram of the switching circuit of one embodiment of the invention.As it can be seen, the present invention's can be certainly
Row produces the switching circuit 1 of positive voltage or negative voltage and comprises one first switch 10, second switch 20, the 3rd switch 30 and
4th switch 40.First switch 10 has one first end and one second end, and the first end of the first switch 10 receives a power Vcc,
Second end of this first switch 10 couples one first end of an energy-storage travelling wave tube 50.Second switch 20 has one first end and one second
End, the first end of second switch 20 couples one second end of energy-storage travelling wave tube 50, and the second end of second switch 20 receives one with reference to electricity
Position Vg.3rd switch 30 has one first end and one second end, and the first end of the 3rd switch 30 couples an input IN, and the 3rd opens
This second end of pass 30 couples the first end of energy-storage travelling wave tube 50.4th switch 40 has one first end and one second end, and the 4th opens
First end of pass 40 couples the second end of energy-storage travelling wave tube 50, and the second end of the 4th switch 40 couples an outfan OUT.
From the above, when the first switch 10 conducting, and second switch 20 is also switched on, and makes power Vcc to energy-storage travelling wave tube 50
It is charged, through after a while, after energy-storage travelling wave tube 50 is full of energy, then the 3rd switch 30 conducting, and the 4th switch 40 is also
Conducting, and export the voltage stored by energy-storage travelling wave tube 50, to produce a positive voltage or a negative voltage.
Such as in the processing procedure of 25 volts of V, i.e. power Vcc is 25V, and when reference potential Vg is 0V, and controls first and open
Close 10 to turn on second switch 20, and the 3rd switch 30 switchs 40 with the 4th and ends, so, power Vcc is through the first switch
Energy-storage travelling wave tube 50 is charged by 10 with second switch 20, makes energy-storage travelling wave tube 50 store the energy of 25V.Fully charged at energy-storage travelling wave tube 50
After lotus energy, control the first switch 10 and end with second switch 20, and the 3rd switch 30 and the 4th switch 40 conducting, make energy storage unit
Electric charge stored by part 50 can via the 4th switch 40 with outfan OUT and export, wherein due to first switch 10 and second
During switch 20 conducting, energy-storage travelling wave tube 50 is charged by power Vcc, makes energy-storage travelling wave tube 50 store 25V, so, the of energy-storage travelling wave tube 50
One end be equivalent to positive pole (+), and the second end of energy-storage travelling wave tube 50 be equivalent to negative pole (-), and when the first switch 10 and second switch
20 cut-offs, and after the 3rd switch 30 and the 4th switch 40 turn on, the energy of the 25V stored by energy-storage travelling wave tube 50 can be from energy-storage travelling wave tube
The second end output of 50, and be equivalent to switching circuit 1 generation-25V voluntarily.
Understanding based on above-mentioned, the present invention can produce negative voltage or just voluntarily according to the positive voltage received or negative voltage and correspondence
Voltage, say, that the switching circuit 1 of the present invention receives positive voltage 25V, and can produce negative voltage-25V voluntarily, or cuts
Changing circuit 1 and receive negative voltage-25V, and can produce positive voltage 25V voluntarily, so, the present invention need not extra many uses one
Power supply unit, and then reach the purpose saving circuit area with cost.Furthermore, the switching circuit 1 of the present invention is at 25V processing procedure
In, external 25V power supply, and by controlling the first switch 10, second switch the 20, the 3rd switch 30 and the 4th switch 40 conducting or cutting
Only can produce-25V power supply voluntarily, wherein 25V external power supply is not required to disconnect, and makes positive voltage+25V and negative voltage-25V to be total to
It is stored in system, implies that the pressure 50V that can reach two times, to reach to need not use the pressure assembly of superelevation (such as to use and be resistant to
The pressure assembly more than more than 25V), and then save circuit area and cost.Wherein, the energy-storage travelling wave tube 50 of the present invention be an electric capacity or
One inductance.
See also Fig. 2, be applied to the circuit diagram of display driver circuit for the switching circuit of the present invention.As it can be seen,
The switching circuit of the present embodiment can be applicable to power circuit, and in the present embodiment, it is low that the switching circuit of the present embodiment is applied to one
Voltage difference linear voltage regulator (Low Dropout regulator, LDO) 6, low-voltage difference linear constant voltage regulator 6 comprises one first point
Volt circuit 62, one manostat 64,1 second bleeder circuit 66, the 3rd bleeder circuit 67, charge pump 68 and one first ratio
Relatively device 69.
One end of first bleeder circuit 62 receives power Vcc, and the other end of the first bleeder circuit 62 is coupled to earth terminal,
And after dividing voltage supply Vcc, produce an input voltage, and the input voltage after dividing potential drop is sent to manostat 64, manostat 64 couples
First bleeder circuit 62 and input voltage after receiving the first bleeder circuit 62 dividing potential drop, produce an output signal Vo, to provide defeated
Go out signal Vo to subsequent conditioning circuit the power supply as subsequent conditioning circuit.Second bleeder circuit 66 couples manostat 64, and dividing potential drop voltage stabilizing
The output signal Vo of device 64 output, and produces reference signal Vr, and transmits reference signal Vr to manostat 64, to control voltage stabilizing
Device 64 exports stable output signal Vo.
Furthermore, one end of the 3rd bleeder circuit 67 couples the outfan of manostat 64, and charge pump 68 couples the 3rd dividing potential drop
The other end of circuit 67, with offer side Pu voltage to the 3rd bleeder circuit 67, so, the 3rd bleeder circuit 67 dividing potential drop manostat 64
Output signal Vo and the side Pu voltage of charge pump 68 between voltage difference, and produce a branch pressure voltage Vd, the first comparator
69 couple the 3rd bleeder circuit 67, and receive branch pressure voltage Vd, and the first comparator 69 is according to threshold value Vth and a branch pressure voltage
Vd, produce one compare signal and for subsequent conditioning circuit.
Additionally, the manostat 64 of the present embodiment is low pressure difference linear voltage regulator, manostat 64 comprises an operational amplifier 640
With an output switch 642.Operational amplifier 640 has a first input end, one second input and an outfan.Operation is amplified
The first input end of device 640 couples the first bleeder circuit 62, and the second input of operational amplifier 640 couples the second bleeder circuit
66, the end that controls of output switch 642 couples the outfan of operational amplifier 640, and one first end of output switch 642 receives power supply
Signal, one second end of output switch 642 couples the second bleeder circuit 66, so, manostat 64 can be according to the first bleeder circuit
Input voltage after 62 dividing potential drops and reference signal Vr of the second bleeder circuit 66 output, and produce output signal Vo.
Furthermore, charge pump 68 comprise one first switching switch 680,1 second switching switch 681,1 first electric capacity 682,
One first controls switch 683, and one second controls switch 684, the 3rd control switch 685, the 4th control switch 686, delays
Rush device 687,1 second electric capacity 688,1 the 5th control switch 689, the 6th control switch 690, the 7th control switch 691 with
8th controls switch 692.One first end of the first switching switch 680 couples earth terminal, one second end of the first switching switch 680
One first end and second coupling the second switching switch 681 controls one first end of switch 684, and first controls the one of switch 683
First end receives 0 volt of voltage (i.e. ground connection), and the first one second end controlling switch 683 couples the one of the second control switch 684
Second end and one first end of the first electric capacity 682, one second end of the first electric capacity 682 couples the one the of the 4th control switch 686
One end, the 3rd one first end controlling switch 685 receives power Vcc, and the 3rd one second end controlling switch 685 couples the 4th control
One second end of system switch 682 and buffer 687.
Connecting described, one second end of the second switching switch 681 couples one first end of the 6th control switch 690, and the 5th
One first end controlling switch 689 receives 0 volt of voltage (i.e. ground connection), and the 5th one second end controlling switch 689 couples the 6th
Controlling one second end and one first end of the second electric capacity 688 of switch 684, one second end of the second electric capacity 688 couples the 8th control
One first end of system switch 692, the 7th one first end controlling switch 691 receives power Vcc, and the 7th controls the one of switch 691
Second end couples one second end and earth terminal of the 8th control switch 692.
Based on above-mentioned, the charge pump 68 of the present embodiment produces the mode of side Pu voltage first to the first electric capacity 682 and second
Electric capacity 688 is charged, and i.e. first controls switch the 683, the 3rd control switch the 685, the 5th control switch 689 controls to open with the 7th
Close 691 conductings, and the second control switch the 684, the 4th controls switch the 686, the 6th control switch 690 and the 8th and controls switch 692
End, and the first switching switch 680 and the second switching switch 681 are also all cut-off state, so, power Vcc is electric to first
Hold 682 to be charged with the second electric capacity 692.
After the first electric capacity 682 and the second electric capacity 692 charge electricity, first control switch 683, the 3rd control switch 685, the
Five control switches 689 and the 7th control switch 691 cut-off, and the second control switch the 684, the 4th controls switch the 686, the 6th and controls
Switch 690 and the 8th controls switch 692 conducting, and now, charge pump 68 then starts normal operation, the i.e. first switching switch 680
Conducting, and the second switching switch 681 cut-off, the first electric capacity 682 is then charged by buffer 687, after, the first switching switch 680
Cut-off, and the second switching switch 681 conducting, then the voltage that the first electric capacity 682 stores then is sent to the second electric capacity 688, and exports
For side Pu voltage.
Owing to the first electric capacity 682 and the second electric capacity 688 can be full of electric charge or Partial charge by power Vcc, so that slow
Rush device 687 when the first electric capacity 682 is charged, can very quickly be charged to predetermined current potential, and the first electric capacity 682 with
The power Vcc that second electric capacity 688 is received can be by the place of any offer power supply in the device that used, so, the present invention
Can reach power saving and purpose.
Furthermore, if power Vcc is 25V, it is right with the first control switch 683 that power Vcc can control switch 685 via the 3rd
First electric capacity 682 is charged to 25V, then controls switch 686 and the first control switch 684 via the 4th and export-25V, so, this
Invention can correspondence produces negative voltage voluntarily according to the positive voltage received, without one power supply unit of extra many uses,
And then reach the purpose saving circuit area with cost.
It addition, the charge pump 68 of the present embodiment is only an embodiment, but it is not limited thereto embodiment, also can only make
Voltage can be provided to the 3rd bleeder circuit 67 with the first electric capacity 682.
See also Fig. 3 and Fig. 4, for the circuit diagram of switching circuit and the profile of another embodiment of the present invention.As
Shown in figure, the first switch 10 of the switching circuit 1 of the present embodiment, second switch the 20, the 3rd switch 30 are all with the 4th switch 40
One metal-oxide half field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET),
Wherein, the first switch 10 and the 3rd switch 30 are a p-type metal-oxide half field effect transistor, and second switch 20 with the 4th switch 40 is
One N-type metal-oxide half field effect transistor, the semiconductor circuit structure of the switching circuit 1 of the present embodiment is as shown in Figure 4, it is provided that a p-type
Substrate 70, one first p type wells 72 is formed at the top of P-type substrate 70, one first N-type well 12,1 second N-type well 22, the 3rd N
Type well 32 and one the 4th N-type well 42 are all formed in the first p type wells 72, and wherein, first switch 10 of the present embodiment is opened with the 3rd
Close 30 to be formed directly in the first N-type well 12 and the 3rd N-type well 32, say, that one first p-type doped region 14 and one the 2nd P
Type doped region 16 is formed in the first N-type well 12, and a first grid layer 18 is formed at the first p-type doped region 14 and the second p-type
The top of doped region 16, to form p-type metal-oxide half field effect transistor, is i.e. the first switch 10, wherein, and the first p-type doped region 14
Couple the first end of energy-storage travelling wave tube 50, and the second p-type doped region 16 couples power Vcc.It addition, further include in the first N-type well 12
One first n-type doping district 19, the first n-type doping district 19 is positioned at the side of the second p-type doped region 16, and the first n-type doping district 19
Power Vcc is all coupled with the second p-type doped region 16.
In like manner, the 3rd N-type well 32 comprises one the 3rd p-type doped region 34, the 4th p-type doped region 36 and one the 3rd grid layer
38.3rd p-type doped region 34 is positioned at the side of the 4th p-type doped region 36, and the 3rd p-type doped region 34 couples energy-storage travelling wave tube 50
First end, the 4th p-type doped region 36 couples input IN, and the 3rd grid layer 38 is positioned at the 3rd p-type doped region 34 and mixes with the 4th p-type
The top in miscellaneous district 36.It addition, the 3rd N-type well 32 further includes one the 4th n-type doping district 39.4th n-type doping district 39 is positioned at the 4th P
The side of type doped region 36, and receive power Vcc.
It addition, the second N-type well 22 comprises one second p type wells 23.Second p type wells 23 comprises one second n-type doping district 24,
3rd n-type doping district 26, second grid floor 28 and one the 5th p-type doped region 29.Second n-type doping district 24 is positioned at the second p-type
In well 23, the 3rd n-type doping district 26 is positioned at the second p type wells 23, and is positioned at the side in the second n-type doping district 24, second grid
Floor 28 is positioned at the 2nd N doped region 24 and the top in the 3rd n-type doping district 26, and the 5th p-type doped region 29 is arranged at the second p type wells 23
In, and it is positioned at the side in the 3rd n-type doping district 26, wherein, the second n-type doping district 24 couples the second end of energy-storage travelling wave tube 50, the
Three n-type doping districts 26 receive reference potential Vg, and the 5th p-type doped region 29 couples outfan OUT.
4th N-type well 42 comprises the 3rd p type wells 43.3rd p type wells 43 comprises one the 5th n-type doping district 44, the 6th N-type
Doped region 46,1 the 4th grid layer 48 and one the 6th p-type doped region 49.5th n-type doping district 44 is positioned at the 3rd p type wells 43,
6th n-type doping district 46 is positioned at the 3rd p type wells 43, and is positioned at the side in the 5th n-type doping district 44, and the 4th grid layer 48 is positioned at
5th n-type doping district 44 and the 6th n-type doping district 46, and above the 5th n-type doping district 44 and the 6th n-type doping district 46,
6th p-type doped region 49 is positioned at the 3rd p type wells 43, and in the side in the 6th n-type doping district 46.Wherein, the 5th n-type doping district
44 the second ends coupling energy-storage travelling wave tube 50, and the 6th n-type doping district 46 and the 6th p-type doped region 49 are all coupled to outfan OUT.
It addition, the second N-type well 22 of the present embodiment and the 4th N-type well 42 comprise one the 7th n-type doping district 220 and respectively
8th n-type doping district 420.7th n-type doping district 220 and the 8th n-type doping district 420 lay respectively at the second p type wells 23 and the 3rd P
The side of type well 43, and all it is coupled to earth terminal.
Based on above-mentioned, the switching circuit 1 of the present invention is by the second N-type well 22 and the 4th N-type well 42, and makes second switch 20
It is respectively arranged with independent well with the 4th switch 40, and isolates other switch module, so, in the second N-type well 22 and the 4th N-type well 42
Voltage can with the second N-type well 22 from the 4th N-type well 42 outside voltage different.So, the switching circuit 1 of the present invention can be by
Control the first switch 10, second switch the 20, the 3rd switch 30 and the on or off of the 4th switch 40, and coordinate the second N-type well
22 and the 4th independent well of N-type well 42, and can reach according to the positive voltage received or negative voltage that correspondence produces negative electricity voluntarily
Pressure or positive voltage, use a power supply unit without extra, and need not use high pressure assembly, and then save electricity
Road surface is amassed and cost.
Refer to Fig. 5 and Fig. 6, for the circuit diagram of switching circuit and the profile of another embodiment of the present invention.As schemed
Show, the place that the present embodiment is different from the embodiment of Fig. 3 and Fig. 4, be that the 3rd switch 30 of this enforcement is a transmission gate, the i.e. the 3rd
Switch 30 comprises one the 5th N-type well 82, the 4th p type wells 83, the 9th n-type doping district 84, the tenth n-type doping district 86,1 the
Five grid layer 88 and one the 8th p-type doped regions 89.5th N-type well 82 is positioned at the upper of P-type substrate 70, and the 4th p type wells 83 is positioned at
In five N-type wells 82, the 9th n-type doping district 84 is positioned at the 4th p type wells 83, and the tenth n-type doping district 86 is positioned at the 4th p type wells 83
In, and it being positioned at the side in the 9th n-type doping district 84, the 8th p-type doped region 89 is positioned at the 4th p type wells 83, and is positioned at the tenth N-type
The side of doped region 86, wherein, the 9th n-type doping district 84 couples the first end of the 3rd p-type doped region 34 and energy-storage travelling wave tube 50, the
Ten n-type doping districts 86 couple the 8th p-type doped region 89 and input IN.
Additionally, the 5th N-type well 82 comprises 1 the 11st n-type doping district 820.11st n-type doping district is positioned at the 5th N-type well
In 82, and it is positioned at the side of the 4th p type wells 83, and couples the tenth n-type doping district the 86, the 8th p-type doped region 89 and input IN.
See also Fig. 7 and Fig. 8, for the circuit of the fourth embodiment of the present invention Yu the switching circuit of the 5th embodiment
Figure.As it can be seen, the place that this 4th embodiment is unlike the embodiments above with the 5th embodiment, it is the first of the 4th embodiment
Switch 10 to the 4th switch 40 is a transmission gate, and the first of the 5th embodiment the switch 10 to the 4th switch 40 connects for bipolar
Junction transistor (Bipolar Junction Transistor, BJT), its operating principle all with the switching circuit of first embodiment
Identical, will be not repeated here in this, it addition, the first switch 10 to the 4th switch 40 all can be from field-effect transistor, bipolarity
Arbitrarily select and combination between junction transistor or transmission gate.
In sum, the switching circuit that can produce positive voltage or negative voltage voluntarily of the present invention, it is by one first switch
One first end receives a power supply, and one second end of the first switch couples one first end of an energy-storage travelling wave tube.The one of one second switch
First end couples one second end of energy-storage travelling wave tube, and one second end of second switch receives a reference potential.The one of one the 3rd switch
First end couples an input, and one second end of the 3rd switch couples the first end of energy-storage travelling wave tube.The one first of one the 4th switch
End couples the second end of energy-storage travelling wave tube, and one second end of the 4th switch couples an outfan.So, it is not necessary to use high pressure group
Part, and need not additionally use a power supply unit, and then reach the purpose saving circuit area with cost.
Above is only presently preferred embodiments of the present invention, be not used for limiting the scope that the present invention implements, Fan Yibenfa
Equalization change and the modification that shape, structure, feature and spirit described in bright right is done, all should be included in the present invention
Right in.
Claims (8)
1. one kind can produce a positive voltage or the switching circuit of a negative voltage voluntarily, it is characterised in that comprising:
One first switch, has one first end and one second end, and this first end receives a power supply, this second end of this first switch
Couple one first end of an energy-storage travelling wave tube；
One second switch, has one first end and one second end, and this first end of this second switch couples the one of this energy-storage travelling wave tube
Second end, this second end of this second switch receives a reference potential；
One the 3rd switch, has one first end and one second end, and this first end of the 3rd switch couples an input, and the 3rd
This second end of switch couples this first end of this energy-storage travelling wave tube；And
One the 4th switch, has one first end and one second end, and this first end of the 4th switch couples being somebody's turn to do of this energy-storage travelling wave tube
Second end, this second end of the 4th switch couples an outfan；
Wherein, this first switch further includes one first N-type well, one first p-type doped region, one second p-type doped region, a first grid
Pole floor and one first n-type doping district, this first N-type well location is in one first p type wells, and this first p type wells is positioned at a p-type base
The end；This first p-type doped region is positioned at this first N-type well, and is coupled to this first end of this energy-storage travelling wave tube；This second p-type is mixed
Miscellaneous district is positioned at this first N-type well, and is positioned at the side of this first p-type doped region；This first grid layer is positioned at this first p-type and mixes
Between miscellaneous district and this second p-type doped region, and between this first p-type doped region and this second p-type doped region above；This is years old
One n-type doping district is positioned at this first N-type well, and is positioned at the side of this second p-type doped region.
2. switching circuit as claimed in claim 1, it is characterised in that wherein when this first switch conduction, this second switch
It is also switched on, with this power supply, this energy-storage travelling wave tube is charged.
3. switching circuit as claimed in claim 2, it is characterised in that wherein when three switch conductions, the 4th switch
It is also switched on, to export the voltage stored by this energy-storage travelling wave tube, to produce this positive voltage or this negative voltage.
4. switching circuit as claimed in claim 1, it is characterised in that wherein this second switch further includes:
One second N-type well, is positioned at this first p type wells；
One second p type wells, is positioned at this second N-type well；
One second n-type doping district, is positioned at this second p type wells, and is coupled to this second end of this energy-storage travelling wave tube；
One the 3rd n-type doping district, is positioned at this second p type wells, and is positioned at the side in this second n-type doping district, and is coupled to one
Earth terminal；And
One second grid layer, between this second n-type doping district and the 3rd n-type doping district, and in this second n-type doping district
Top with the 3rd n-type doping district；
One the 3rd p-type doped region, is positioned at this second p type wells, and is positioned at the side in the 3rd n-type doping district, and is coupled to this
Outfan；
Wherein, this second N-type well is an independent well, to isolate other assembly.
5. switching circuit as claimed in claim 4, it is characterised in that wherein the 3rd switch further includes:
One the 3rd N-type well, is positioned at this first p type wells；
One the 4th p-type doped region, is positioned at the 3rd N-type well, and is coupled to this first end of this energy-storage travelling wave tube；
One the 5th p-type doped region, is positioned at the 3rd N-type well, and is coupled to this input；
One the 3rd grid layer, between the 4th p-type doped region and the 5th p-type doped region, and at the 4th p-type doped region
Top with the 5th p-type doped region；And
One the 4th n-type doping district, is positioned at the 3rd N-type well, and is positioned at the side of the 5th p-type doped region.
6. switching circuit as claimed in claim 5, it is characterised in that wherein the 4th switch further includes:
One the 4th N-type well, is positioned at this first p type wells；
One the 3rd p type wells, is positioned at the 4th N-type well；
One the 5th n-type doping district, is positioned at the 3rd p type wells, and is coupled to this second end of this energy-storage travelling wave tube；
One the 6th n-type doping district, is positioned at the 3rd p type wells, and is positioned at the side in the 5th n-type doping district, and is coupled to this
Outfan；
One the 4th grid layer, between the 5th n-type doping district and the 6th n-type doping district, and in the 5th n-type doping district
And the top between the 6th n-type doping district；And
One the 6th p-type doped region, is positioned at the 3rd p type wells, and is positioned at the side in the 6th n-type doping district, and is coupled to this
Outfan；
Wherein, the 4th N-type well is an independent well, to isolate other assembly.
7. switching circuit as claimed in claim 1, it is characterised in that wherein this energy-storage travelling wave tube is an electric capacity or an inductance.
8. switching circuit as claimed in claim 1, it is characterised in that wherein this first switch, this second switch, the 3rd open
Closing with the 4th switch is a field-effect transistor, a transmission gate or bipolar junction transistor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102116939 | 2013-05-13 | ||
| TW102116939A TWI486929B (en) | 2013-05-13 | 2013-05-13 | Can produce self-voltage or negative voltage switching circuit |
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| CN103296881A CN103296881A (en) | 2013-09-11 |
| CN103296881B true CN103296881B (en) | 2016-12-28 |
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| CN201310195031.2A Active CN103296881B (en) | 2013-05-13 | 2013-05-22 | Switching circuit capable of automatically generating positive voltage or negative voltage |
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| TW (1) | TWI486929B (en) |
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| CN104867465B (en) * | 2015-05-11 | 2017-08-25 | 深圳市华星光电技术有限公司 | Negative pressure signal generative circuit |
| CN107124101B (en) * | 2017-05-22 | 2019-06-21 | 南京矽力杰半导体技术有限公司 | Isolated form Switching capacitors |
| CN112152452B (en) * | 2019-06-26 | 2022-02-08 | 台达电子工业股份有限公司 | Power supply circuit and operation method |
| TWI698077B (en) * | 2019-10-14 | 2020-07-01 | 瑞昱半導體股份有限公司 | Charge pump circuit and power-supply method having dynamic voltage adjusting mechanism of the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752287A (en) * | 2008-12-09 | 2010-06-23 | 上海华虹Nec电子有限公司 | Method for isolating device in high-voltage process |
| CN102403893A (en) * | 2010-09-10 | 2012-04-04 | 王星光 | High-power high-efficiency charge pump circuit |
| CN102769379A (en) * | 2012-07-23 | 2012-11-07 | 孙坚 | Positive and negative voltage generation circuit applicable to silicon-on-insulator (SOI) process |
| CN103035638A (en) * | 2011-09-29 | 2013-04-10 | 台湾积体电路制造股份有限公司 | Tunable ESD protection device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW362277B (en) * | 1996-07-29 | 1999-06-21 | Hynix Semiconductor Inc | Charge pump for a semiconductor substrate |
| JP3832575B2 (en) * | 2002-02-12 | 2006-10-11 | シャープ株式会社 | Negative voltage output charge pump circuit |
| JP5273681B2 (en) * | 2006-12-31 | 2013-08-28 | サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニー | Bipolar reversible charge pump circuit and associated method |
| TW200849202A (en) * | 2007-06-08 | 2008-12-16 | Innolux Display Corp | Negative voltage generating circuit |
| US9006832B2 (en) * | 2011-03-24 | 2015-04-14 | Invensense, Inc. | High-voltage MEMS apparatus and method |
| US8501603B2 (en) * | 2011-06-15 | 2013-08-06 | United Microelectronics Corp. | Method for fabricating high voltage transistor |
| US8896021B2 (en) * | 2011-09-14 | 2014-11-25 | United Microelectronics Corporation | Integrated circuit device |
-
2013
- 2013-05-13 TW TW102116939A patent/TWI486929B/en active
- 2013-05-22 CN CN201310195031.2A patent/CN103296881B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752287A (en) * | 2008-12-09 | 2010-06-23 | 上海华虹Nec电子有限公司 | Method for isolating device in high-voltage process |
| CN102403893A (en) * | 2010-09-10 | 2012-04-04 | 王星光 | High-power high-efficiency charge pump circuit |
| CN103035638A (en) * | 2011-09-29 | 2013-04-10 | 台湾积体电路制造股份有限公司 | Tunable ESD protection device |
| CN102769379A (en) * | 2012-07-23 | 2012-11-07 | 孙坚 | Positive and negative voltage generation circuit applicable to silicon-on-insulator (SOI) process |
Also Published As
| Publication number | Publication date |
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| TWI486929B (en) | 2015-06-01 |
| TW201443848A (en) | 2014-11-16 |
| CN103296881A (en) | 2013-09-11 |
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