CN103296881A - Switching circuit capable of automatically generating positive voltage or negative voltage - Google Patents
Switching circuit capable of automatically generating positive voltage or negative voltage Download PDFInfo
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- CN103296881A CN103296881A CN2013101950312A CN201310195031A CN103296881A CN 103296881 A CN103296881 A CN 103296881A CN 2013101950312 A CN2013101950312 A CN 2013101950312A CN 201310195031 A CN201310195031 A CN 201310195031A CN 103296881 A CN103296881 A CN 103296881A
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- 238000004146 energy storage Methods 0.000 claims abstract description 51
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- 230000005669 field effect Effects 0.000 claims description 7
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- 239000004973 liquid crystal related substance Substances 0.000 description 12
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Abstract
The invention relates to a switching circuit capable of automatically generating positive voltage or negative voltage, which receives a power supply from a first end of a first switch, and a second end of the first switch is coupled with a first end of an energy storage element. A first terminal of a second switch is coupled to a second terminal of the energy storage element, and a second terminal of the second switch receives a reference potential. A first terminal of a third switch is coupled to an input terminal, and a second terminal of the third switch is coupled to the first terminal of the energy storage element. A first terminal of a fourth switch is coupled to the second terminal of the energy storage element, and a second terminal of the fourth switch is coupled to an output terminal. Therefore, an ultrahigh voltage-resistant component is not needed, and an extra power supply is not needed, so that the aims of saving the circuit area and saving the cost are fulfilled.
Description
Technical field
The invention relates to a kind of commutation circuit, it refers to a kind of commutation circuit that can produce positive voltage or negative voltage voluntarily especially.
Background technology
Liquid crystal indicator is used the display unit as personal computer etc. widely.Liquid crystal indicator has display panels and reaches in order to drive the drive circuit of display panels.Display panels makes two plate bases relative, retention gap between this two plate base, and form after liquid-crystal composition enclosed this gap.The substrate that forms display panels has pixel electrode and counter electrode.Between pixel electrode and counter electrode, apply voltage, the alignment direction that is present in the liquid crystal molecule between pixel electrode and counter electrode is changed, and then the light transmittance of display panels is changed: utilize this light transmittance to change to show.In the liquid crystal indicator of TFT formula, each pixel electrode all has switch module, utilizes this switch module that voltage is supplied to pixel electrode.
Known TFT formula liquid crystal indicator has: the liquid crystal indicator of longitudinal electric field formula, and it is located on the substrate of a side pixel electrode, and counter electrode is located on the substrate of opposite side; And the liquid crystal indicator of transverse electric field formula, it is arranged on pixel electrode and counter electrode on the substrate of the same side.
The voltage of desiring to be applied on the pixel electrode is sent near the pixel electrode via the signal of video signal line, is connected in switch module.In addition, make switch module carry out the signal of ON/OFF action by the scan signal line supply.In the TFT formula liquid crystal indicator, the signal of video signal line for example be arranged a plurality of in parallel in the longitudinal direction extension and at transverse direction.In addition, scan signal line intersects with the signal of video signal line, be arranged a plurality of in parallel in the transverse direction extension and at longitudinal direction.Even, on the zone that 2 scan signal lines that intersect by adjacent 2 signal of video signal lines and with this signal of video signal line surround, be formed with pixel electrode.This pixel electrode is configured to rectangular and forms the viewing area.Be formed with drive circuit around the viewing area, in order to transmit signals to signal of video signal line and scan signal line.
For in response to the demand of the mankind to color, liquid crystal display reaches the purpose of colorize by colored filter, and namely must distinguish the light and shade of each color via the number of liquid crystal light transmittance for the requirement of multicolourization.Generally the voltage of our citation and the relation of light transmittance can be understood, and different light transmittances must be provided by different current potentials, and therefore driving chip must reach various GTG (grayscale) by some distinct methods.Common method has pulse width modulation method (Pulse Width Modulation, PWM), pulse height modulation method (Amplitude Modulation, AM or Pulse Height Modulation, PHM), reach picture frame modulation method (Frame Modulation, FM or Frame Rate Control, or the using with of this several method FRC).
In order further to reduce the power consumption of liquid crystal indicator, the drive waveforms that belongs to the High-Frequency Amplitude Selection (Hi-FAS) of Alt-Preshko Technique (APT) type of drive also is suggested, utilize the voltage of the COM signal that improves less switching, reduce the voltage of the normal SEG signal that switches, reach the effect of power saving.Owing to use the low pressure assembly at the more SEG of signal line number, also can reach the purpose of saving the chip IC cost again.
Yet the LCD of the Hi-FAS framework of existing built-in electric capacity may have the problem of driving force deficiency at large-sized panel, so the application that client's applied voltage can be provided must be arranged owing to the problem of signal thrust.And in the Hi-FAS framework, the voltage of COM signal has positive voltage and negative voltage, and the FPC system end only can provide a positive voltage, so must additionally use a power supply unit to produce a negative voltage, namely need to use the power supply unit more than two that positive voltage and negative voltage are provided, so, will increase circuit area, and then increase cost.
Moreover, because flexible circuit board (FPC) system end only can provide positive voltage, and the voltage of COM signal has positive voltage and negative voltage, so, the COM signal generating circuit must possess the withstand voltage of the positive voltage that can bear the FPC system end, for example when FPC system end generation positive voltage is 50V, make the COM signal generating circuit can produce positive voltage+25V and negative voltage-25V, but the assembly of COM signal generating circuit inside must can bear the withstand voltage of 50V, and need to use high withstand voltage assembly, and then increase FPC circuit area and cost.
Therefore, how at the problems referred to above the commutation circuit that a kind of novelty can produce positive voltage or negative voltage voluntarily to be proposed, it can produce positive voltage or negative voltage voluntarily and not need extra power supply unit that uses more, and does not need to use high withstand voltage assembly, and then saves circuit area and cost.
Summary of the invention
One of purpose of the present invention, be to provide a kind of commutation circuit that can produce positive voltage or negative voltage voluntarily, it can be according to the positive voltage that receives or negative voltage and correspondence produces negative voltage or positive voltage voluntarily, and do not need extra power supply unit that uses, and then reach the purpose of saving circuit area and cost more.
One of purpose of the present invention is to provide a kind of commutation circuit that can produce positive voltage or negative voltage voluntarily, and it is by the plural switch conduction of control or end and do not need to use the withstand voltage assembly of superelevation, and then saves circuit area and cost.
The commutation circuit that can produce positive voltage or negative voltage voluntarily of the present invention comprises one first switch, a second switch, one the 3rd switch and one the 4th switch.First switch has one first end and one second end, and first termination is received a power supply, and second end of first switch couples one first end of an energy-storage travelling wave tube.Second switch has one first end and one second end, first end of second switch couples one second end of energy-storage travelling wave tube, second termination of second switch is received a reference potential, the 3rd switch has one first end and one second end, first end of the 3rd switch couples an input, and second end of the 3rd switch couples first end of energy-storage travelling wave tube.The 4th switch has one first end and one second end, and first end of the 4th switch couples second end of energy-storage travelling wave tube, and second end of the 4th switch couples an output.So, the present invention is by the plural switch conduction of control or end and do not need to use the withstand voltage assembly of superelevation, and then saves circuit area and cost.Moreover the present invention can be according to the positive voltage that receives or negative voltage and correspondence produces negative voltage or positive voltage voluntarily, and does not need additionally to use a power supply unit, and then reaches the purpose of saving circuit area and cost.
The beneficial effect of implementing the present invention's generation is: the commutation circuit that can produce positive voltage or negative voltage voluntarily of the present invention, and its one first termination by one first switch is received a power supply, and one second end of first switch couples one first end of an energy-storage travelling wave tube.One first end of one second switch couples one second end of energy-storage travelling wave tube, and one second termination of second switch is received a reference potential.One first end of one the 3rd switch couples an input, and one second end of the 3rd switch couples first end of energy-storage travelling wave tube.One first end of one the 4th switch couples second end of energy-storage travelling wave tube, and one second end of the 4th switch couples an output.So, do not need to use high withstand voltage assembly, and do not need additionally to use a power supply unit, and then reach the purpose of saving circuit area and cost.
Description of drawings
Fig. 1 is the circuit diagram of the commutation circuit of the first embodiment of the present invention;
Fig. 2 is applied to the circuit diagram of display driver circuit for commutation circuit of the present invention;
Fig. 3 is the circuit diagram of the commutation circuit of the second embodiment of the present invention;
Fig. 4 is the profile of the commutation circuit of Fig. 3;
Fig. 5 is the circuit diagram of the commutation circuit of the third embodiment of the present invention;
Fig. 6 is the profile of the commutation circuit of Fig. 5;
Fig. 7 is the circuit diagram of the commutation circuit of the fourth embodiment of the present invention;
Fig. 8 is the circuit diagram of the commutation circuit of the fifth embodiment of the present invention.
[figure number is to as directed]
1 commutation circuit, 10 first switches
12 first N-type wells 14 a P type doped region
16 the 2nd P type doped regions, 18 first grid layers
19 first N-type doped regions, 20 second switches
22 second N-type wells, 23 second p type wellses
220 the 7th N-type doped regions 24 the 3rd N-type doped region
26 the 4th N-type doped regions, 28 second grid layers
29 the 5th P type doped regions 30 the 3rd switch
32 the 3rd N-type wells 34 the 3rd P type doped region
36 the 4th P type doped regions 38 the 3rd grid layer
39 the 4th P type doped regions 40 the 4th switch
42 the 4th N-type wells 420 the 8th N-type doped region
43 the 3rd p type wellses 44 the 5th N-type doped region
46 the 6th N-type doped regions 48 the 4th grid layer
49 the 6th P type doped regions, 50 energy-storage travelling wave tubes
6 low-voltage difference linear constant voltage regulators, 62 first bleeder circuits
64 pressurizers, 640 operational amplifiers
642 output switches, 66 second bleeder circuits
67 the 3rd bleeder circuits, 68 charge pumps
680 first diverter switches, 681 second diverter switches
682 first electric capacity, 683 first control switchs
684 second control switchs 685 the 3rd control switch
686 the 4th control switchs, 687 buffers
688 second electric capacity 689 the 5th control switch
690 the 6th control switchs, 69 first comparators
691 the 7th control switchs 692 the 8th control switch
70 P type substrates, 72 first p type wellses
82 the 5th N-type wells 820 the 11 N-type doped region
83 the 4th p type wellses 84 the 9th N-type doped region
86 the tenth N-type doped regions 88 the 5th grid layer
89 the 8th P type doped regions
Embodiment
Further understand and understanding for the effect that makes architectural feature of the present invention and reach has, the spy is with preferred embodiment and cooperate detailed explanation, is described as follows:
See also Fig. 1, be the circuit diagram of the commutation circuit of one embodiment of the invention.As shown in the figure, the commutation circuit 1 that can produce positive voltage or negative voltage voluntarily of the present invention comprises one first switch 10, a second switch 20, one the 3rd switch 30 and one the 4th switch 40.First switch 10 has one first end and one second end, and first termination of first switch 10 is received a power Vcc, and second end of this first switch 10 couples one first end of an energy-storage travelling wave tube 50.Second switch 20 has one first end and one second end, and first end of second switch 20 couples one second end of energy-storage travelling wave tube 50, and second termination of second switch 20 is received a reference potential Vg.The 3rd switch 30 has one first end and one second end, and first end of the 3rd switch 30 couples an input IN, and this second end of the 3rd switch 30 couples first end of energy-storage travelling wave tube 50.The 4th switch 40 has one first end and one second end, and first end of the 4th switch 40 couples second end of energy-storage travelling wave tube 50, and second end of the 4th switch 40 couples an output OUT.
From the above, when 10 conductings of first switch, and also conducting of second switch 20, power Vcc is charged, through after a while, after energy-storage travelling wave tube 50 is full of energy to energy-storage travelling wave tube 50, then the 3rd switch 30 conductings, and the 4th also conducting of switch 40, and the stored voltage of output energy-storage travelling wave tube 50 are to produce a positive voltage or a negative voltage.
For example in the processing procedure of 25 volts of V, be that power Vcc is 25V, and reference potential Vg is when being OV, and control first switch 10 and second switch 20 conductings, and the 3rd switch 30 and the 4th switch 40 and end, so power Vcc to energy-storage travelling wave tube 50 chargings, makes energy-storage travelling wave tube 50 store the energy of 25V with second switch 20 through first switch 10.After energy-storage travelling wave tube 50 is full of energy of a charge, controlling first switch 10 ends with second switch 20, and the 3rd switch 30 and 40 conductings of the 4th switch, energy-storage travelling wave tube 50 stored electric charges can be exported with output OUT via the 4th switch 40, wherein because when first switch 10 and second switch 20 conductings, power Vcc is to energy-storage travelling wave tube 50 chargings, make energy-storage travelling wave tube 50 store 25V, so, first end of energy-storage travelling wave tube 50 is equivalent to positive pole (+), and second end of energy-storage travelling wave tube 50 is equivalent to negative pole (-), end with second switch 20 and work as first switch 10, and after the 3rd switch 30 and 40 conductings of the 4th switch, the energy of the 25V that energy-storage travelling wave tube 50 is stored can be from second end output of energy-storage travelling wave tube 50, and be equivalent to commutation circuit 1 generation-25V voluntarily.
Based on as can be known above-mentioned, the present invention can be according to the positive voltage that receives or negative voltage and correspondence produces negative voltage or positive voltage voluntarily, that is to say, commutation circuit 1 of the present invention receives positive voltage 25V, and can produce negative voltage-25V voluntarily, or commutation circuit 1 receives negative voltage-25V, and can produce positive voltage 25V voluntarily, so, the present invention does not need power supply unit of extra many uses, and then reaches the purpose of saving circuit area and cost.Moreover, commutation circuit 1 of the present invention is in the 25V processing procedure, external 25V power supply, and by control first switch 10, second switch 20, the 3rd switch 30 and 40 conductings of the 4th switch or end and can produce voluntarily-the 25V power supply, wherein the 25V external power supply need not disconnect, and make positive voltage+25V and negative voltage-25V can coexist as in the system, meaning can reach two times withstand voltage 50V, do not need to use the withstand voltage assembly of superelevation (for example using can be withstand voltage above the assembly more than the 25V) to reach, and then save circuit area and cost.Wherein, energy-storage travelling wave tube 50 of the present invention is an electric capacity or an inductance.
See also Fig. 2, be applied to the circuit diagram of display driver circuit for commutation circuit of the present invention.As shown in the figure, the commutation circuit of present embodiment can be applicable to power circuit, in present embodiment, the commutation circuit of present embodiment is applied to a low-voltage difference linear constant voltage regulator (Low Dropout regulator, LDO) 6, low-voltage difference linear constant voltage regulator 6 comprises one first bleeder circuit 62, a pressurizer 64, one second bleeder circuit 66, one the 3rd bleeder circuit 67, a charge pump 68 and one first comparator 69.
One termination of first bleeder circuit 62 is received power Vcc, and the other end of first bleeder circuit 62 is coupled to earth terminal, and generation one input voltage behind the dividing voltage supply Vcc, and the input voltage after the dividing potential drop is sent to pressurizer 64, pressurizer 64 couples first bleeder circuit 62 and input voltage after receiving first bleeder circuit, 62 dividing potential drops, produce an output signal Vo, to provide output signal Vo to subsequent conditioning circuit as the power supply of subsequent conditioning circuit.Second bleeder circuit 66 couples pressurizer 64, and the output signal Vo of dividing potential drop pressurizer 64 outputs, and produces a reference signal Vr, and transmits reference signal Vr to pressurizer 64, with the stable output signal Vo of control pressurizer 64 outputs.
Moreover, one end of the 3rd bleeder circuit 67 couples the output of pressurizer 64, charge pump 68 couples the other end of the 3rd bleeder circuit 67, so that group's Pu voltage to the three bleeder circuits 67 to be provided, so, voltage difference between the output signal Vo of the 3rd bleeder circuit 67 dividing potential drop pressurizers 64 and the group's Pu voltage of charge pump 68, and produce a branch pressure voltage Vd, first comparator 69 couples the 3rd bleeder circuit 67, and reception branch pressure voltage Vd, first comparator 69 is according to a threshold value Vth and branch pressure voltage Vd, and generation one is compared signal and used for subsequent conditioning circuit.
In addition, the pressurizer 64 of present embodiment is low pressure difference linear voltage regulator, and pressurizer 64 comprises an operational amplifier 640 and an output switch 642.Operational amplifier 640 has a first input end, one second input and an output.The first input end of operational amplifier 640 couples first bleeder circuit 62, second input of operational amplifier 640 couples second bleeder circuit 66, the control end of output switch 642 couples the output of operational amplifier 640, one first termination of output switch 642 is received power signal, one second end of output switch 642 couples second bleeder circuit 66, so, input voltage after pressurizer 64 meeting foundations first bleeder circuit 62 dividing potential drops and the reference signal Vr of second bleeder circuit, 66 outputs, and produce output signal Vo.
Moreover, charge pump 68 comprises one first diverter switch 680, one second diverter switch 681, one first electric capacity 682, one first control switch, 683, one second control switchs 684, one the 3rd control switch 685, one the 4th control switch 686, a buffer 687, one second electric capacity 688, one the 5th control switch 689, one the 6th control switch 690, one the 7th control switch 691 and the 8th control switch 692.One first end of first diverter switch 680 couples earth terminal, one second end of first diverter switch 680 couples one first end of second diverter switch 681 and one first end of second control switch 684, one first termination of first control switch 683 is received O volt voltage (being ground connection), one second end of first control switch 683 couples one second end of second control switch 684 and one first end of first electric capacity 682, one second end of first electric capacity 682 couples one first end of the 4th control switch 686, one first termination of the 3rd control switch 685 is received power Vcc, and one second end of the 3rd control switch 685 couples one second end and the buffer 687 of the 4th control switch 682.
Connect described, one second end of second diverter switch 681 couples one first end of the 6th control switch 690, one first termination of the 5th control switch 689 is received O volt voltage (being ground connection), one second end of the 5th control switch 689 couples one second end of the 6th control switch 684 and one first end of second electric capacity 688, one second end of second electric capacity 688 couples one first end of the 8th control switch 692, one first termination of the 7th control switch 691 is received power Vcc, and one second end of the 7th control switch 691 couples one second end and earth terminal of the 8th control switch 692.
Based on above-mentioned, the charge pump 68 of present embodiment produces the mode of group's Pu voltage and earlier first electric capacity 682 and second electric capacity 688 is charged, i.e. first control switch 683, the 3rd control switch 685, the 5th control switch 689 and 691 conductings of the 7th control switch, and second control switch 684, the 4th control switch 686, the 6th control switch 690 and the 8th control switch 692 end, and first diverter switch 680 and second diverter switch 681 also are all cut-off state, so power Vcc is charged to first electric capacity 682 and second electric capacity 692.
After first electric capacity 682 and second electric capacity 692 charge electricity, first control switch 683, the 3rd control switch 685, the 5th control switch 689 and the 7th control switch 691 end, and second control switch 684, the 4th control switch 686, the 6th control switch 690 and 692 conductings of the 8th control switch, at this moment, 68 beginnings of charge pump normal operation, i.e. first diverter switch, 680 conductings, and second diverter switch 681 is ended, 687 in buffer is to 682 chargings of first electric capacity, after, first diverter switch 680 is ended, and 681 conductings of second diverter switch, then the voltage of first electric capacity, 682 storages then is sent to second electric capacity 688, and is output as group's Pu voltage.
Because first electric capacity 682 and second electric capacity 688 can be full of electric charge or Partial charge by power Vcc, so that buffer 687 is when charging to first electric capacity 682, can be charged to predetermined current potential very rapidly, and the power Vcc that first electric capacity 682 and second electric capacity 688 receive can be any place that power supply is provided in the employed device, so, the present invention can reach power saving and purpose.
Moreover, when if power Vcc is 25V, power Vcc can be charged to 25V via the 3rd control switch 685 and 683 pairs of first electric capacity 682 of first control switch, again via the 4th control switch 686 and first control switch 684 and export-25V, so, the present invention can correspondence produces negative voltage voluntarily according to the positive voltage that receives, and does not need extra power supply unit that uses more, and then reaches the purpose of saving circuit area and cost.
In addition, the charge pump 68 of present embodiment only is an embodiment, but is not limited thereto embodiment, also can only use first electric capacity 682 can provide voltage to the three bleeder circuits 67.
See also Fig. 3 and Fig. 4, be circuit diagram and the profile of the commutation circuit of another embodiment of the present invention.As shown in the figure, first switch 10 of the commutation circuit 1 of present embodiment, second switch 20, the 3rd switch 30 and the 4th switch 40 are all a metal-oxide half field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET), wherein, first switch 10 and the 3rd switch 30 are a P type metal-oxide half field effect transistor, and second switch 20 and the 4th switch 40 are a N-type metal-oxide half field effect transistor, the semiconductor circuit structure of the commutation circuit 1 of present embodiment as shown in Figure 4, one P type substrate 70 is provided, one first p type wells 72 is formed at the top of P type substrate 70, one first N-type well 12, one second N-type well 22, one the 3rd N-type well 32 and one the 4th N-type well 42 all are formed in first p type wells 72, wherein, first switch 10 of present embodiment and the 3rd switch 30 directly are formed in the first N-type well 12 and the 3rd N-type well 32, that is to say, one the one P type doped region 14 and one the 2nd P type doped region 16 are formed in the first N-type well 12, and one first grid layer 18 be formed at the top of a P type doped region 14 and the 2nd P type doped region 16, to form P type metal-oxide half field effect transistor, it namely is first switch 10, wherein, the one P type doped region 14 couples first end of energy-storage travelling wave tube 50, and the 2nd P type doped region 16 couples power Vcc.In addition, more comprise the side that one first N-type doped region, 19, the first N-type doped regions 19 are positioned at the 2nd P type doped region 16 in the first N-type well 12, and the first N-type doped region 19 and the 2nd P type doped region 16 all couple power Vcc.
In like manner, the 3rd N-type well 32 comprises one the 3rd P type doped region 34, one the 4th P type doped region 36 and one the 3rd grid layer 38.The 3rd P type doped region 34 is positioned at a side of the 4th P type doped region 36, and the 3rd P type doped region 34 couple first end of energy-storage travelling wave tube 50, the 4th P type doped region 39 couples input IN, and the 3rd grid layer 38 is positioned at the top of the 3rd P type doped region 34 and the 4th P type doped region 36.In addition, the 3rd N-type well 32 more comprises one second N-type doped region 39.The second N-type doped region 39 is positioned at a side of the 4th P type doped region 36, and receives power Vcc.
In addition, the second N-type well 22 comprises one second p type wells 23.Second p type wells 23 comprises one the 3rd N-type doped region 24, one the 4th N-type doped region 26, a second grid layer 28 and one the 5th P type doped region 29.The 3rd N-type doped region 24 is positioned at second p type wells 23, the 4th N-type doped region 26 is positioned at second p type wells 23, and be positioned at a side of the 3rd N-type doped region 24, second grid layer 28 is positioned at the top of the 3rd N doped region 24 and the 4th N-type doped region 26, the 5th P type doped region 29 is arranged in second p type wells 23, and be positioned at a side of the 4th N-type doped region 26, wherein, the 3rd N-type doped region 24 couples second end of energy-storage travelling wave tube 50, the 4th N-type doped region 26 receives reference potential Vg, and the 5th P type doped region 29 couples output OUT.
The 4th N-type well 42 comprises the 3rd p type wells 43.The 3rd p type wells 43 comprises one the 5th N-type doped region 44, one the 6th N-type doped region 46, one the 4th grid layer 48 and one the 6th P type doped region 49.The 5th N-type doped region 44 is positioned at the 3rd p type wells 43, the 6th N-type doped region 46 is positioned at the 3rd p type wells 43, and be positioned at a side of the 5th N-type doped region 44, the 4th grid layer 48 is positioned at the 5th N-type doped region 44 and the 6th N-type doped region 46, and above the 5th N-type doped region 44 and the 6th N-type doped region 46, the 6th P type doped region 49 is positioned at the 3rd p type wells 43, and in a side of the 6th N-type doped region 46.Wherein, the 5th N-type doped region 44 couples second end of energy-storage travelling wave tube 50, and the 6th N-type doped region 46 and the 6th P type doped region 49 all are coupled to output OUT.
In addition, the second N-type well 22 of present embodiment and the 4th N-type well 42 comprise one the 7th N-type doped region 220 and one the 8th N-type doped region 420 respectively.The 7th N-type doped region 220 and the 8th N-type doped region 420 lay respectively at a side of second p type wells 23 and the 3rd p type wells 43, and all are coupled to earth terminal.
Based on above-mentioned, commutation circuit 1 of the present invention is by the second N-type well 22 and the 4th N-type well 42, and make second switch 20 and the 4th switch 40 that independently well respectively be arranged, and isolate other switch module, so, the second N-type well 22 can be different with the 4th N-type well 42 voltage outward with the second N-type well 22 with the voltage in the 4th N-type well 42.So, commutation circuit 1 of the present invention can or be ended by the conducting of controlling first switch 10, second switch 20, the 3rd switch 30 and the 4th switch 40, and cooperate the independent well of the second N-type well 22 and the 4th N-type well 42, and can reach according to the positive voltage that receives or negative voltage and correspondence produces negative voltage or positive voltage voluntarily, and do not need additionally to use a power supply unit, and do not need to use high withstand voltage assembly, and then save circuit area and cost.
See also Fig. 5 and Fig. 6, be circuit diagram and the profile of the commutation circuit of another embodiment of the present invention.As shown in the figure, different the locating of embodiment of present embodiment and Fig. 3 and Fig. 4, the 3rd switch 30 that is this enforcement is a transmission lock, and namely the 3rd switch 30 comprises one the 5th N-type well 82, one the 4th p type wells 83, one the 9th N-type doped region 84, the tenth N-type doped region 86, one the 5th grid layer 88 and one the 8th P type doped region 89.The 5th N-type well 82 be positioned at P type substrate 70 on, the 4th p type wells 83 is positioned at the 5th N-type well 82, the 9th N-type doped region 84 is positioned at the 4th p type wells 83, the tenth N-type doped region 86 is positioned at the 4th p type wells 83, and be positioned at a side of the 9th N-type doped region 84, the 8th P type doped region 89 is positioned at the 4th p type wells 83, and be positioned at a side of the tenth N-type doped region 86, wherein, the 9th N-type doped region 84 couples first end of the 3rd P type doped region 34 and energy-storage travelling wave tube 50, and the tenth N-type doped region 86 couples the 8th P type doped region 89 and input IN.
In addition, the 5th N-type well 82 comprises 1 the 11 N-type doped region 820.The 11 N-type doped region is positioned at the 5th N-type well 82, and is positioned at a side of the 4th p type wells 83, and couples the tenth N-type doped region 86, the 8th P type doped region 89 and input IN.
See also Fig. 7 and Fig. 8, be the circuit diagram of the commutation circuit of the fourth embodiment of the present invention and the 5th embodiment.As shown in the figure, locate different with above-described embodiment with the 5th embodiment of this 4th embodiment, first switch, 10 to the 4th switches 40 that are the 4th embodiment are a transmission lock, and first switch, 10 to the 4th switches 40 of the 5th embodiment are a bipolarity junction transistor (Bipolar Junction Transistor, BJT), its operating principle all commutation circuit with first embodiment is identical, to no longer be given unnecessary details in this, in addition, first switch, 10 to the 4th switches 40 all can be from field-effect transistor, select arbitrarily and combination between bipolarity junction transistor or the transmission lock.
In sum, the commutation circuit that can produce positive voltage or negative voltage voluntarily of the present invention, its one first termination by one first switch is received a power supply, and one second end of first switch couples one first end of an energy-storage travelling wave tube.One first end of one second switch couples one second end of energy-storage travelling wave tube, and one second termination of second switch is received a reference potential.One first end of one the 3rd switch couples an input, and one second end of the 3rd switch couples first end of energy-storage travelling wave tube.One first end of one the 4th switch couples second end of energy-storage travelling wave tube, and one second end of the 4th switch couples an output.So, do not need to use high withstand voltage assembly, and do not need additionally to use a power supply unit, and then reach the purpose of saving circuit area and cost.
It above only is preferred embodiment of the present invention, be not to limit scope of the invention process, all equalizations of doing according to the described shape of claim scope of the present invention, structure, feature and spirit change and modify, and all should be included in the claim scope of the present invention.
Claims (9)
1. commutation circuit that can produce positive voltage or negative voltage voluntarily is characterized in that it comprises:
One first switch has one first end and one second end, and this first termination is received a power supply, and this second end of this first switch couples one first end of an energy-storage travelling wave tube;
One second switch has one first end and one second end, and this of this second switch first end couples one second end of this energy-storage travelling wave tube, and this of this second switch second termination is received a reference potential;
One the 3rd switch has one first end and one second end, and this first end of the 3rd switch couples an input, and this second end of the 3rd switch couples this first end of this energy-storage travelling wave tube; And
One the 4th switch has one first end and one second end, and this first end of the 4th switch couples this second end of this energy-storage travelling wave tube, and this second end of the 4th switch couples an output.
2. as claim 1 a described commutation circuit, it is characterized in that wherein when this first switch conduction, the also conducting of this second switch is charged to this energy-storage travelling wave tube with this power supply.
3. as claim 2 a described commutation circuit, it is characterized in that wherein this first switch comprises:
One first N-type well is positioned at one first p type wells, and this first p type wells is positioned at a P type substrate;
One the one P type doped region is positioned at this first N-type well, and is coupled to this first end of this energy-storage travelling wave tube;
One the 2nd P type doped region is positioned at this first N-type well, and is positioned at a side of a P type doped region;
One first grid layer, between a P type doped region and the 2nd P type doped region, and above between a P type doped region and the 2nd P type doped region; And
One first N-type doped region is positioned at this first N-type well, and is positioned at a side of the 2nd P type doped region.
4. commutation circuit as claimed in claim 2 is characterized in that, wherein when the 3rd switch conduction, the also conducting of the 4th switch is to export the stored voltage of this energy-storage travelling wave tube, to produce a positive voltage or a negative voltage.
5. commutation circuit as claimed in claim 3 is characterized in that, wherein second switch comprises:
One second N-type well is positioned at this first p type wells;
One second p type wells is positioned at this second N-type well;
One the 3rd N-type doped region is positioned at this second p type wells, and is coupled to this second end of this energy-storage travelling wave tube;
One the 4th N-type doped region is positioned at this second p type wells, and is positioned at a side of the 3rd N-type doped region, and is coupled to this earth terminal; And
One second grid layer, between the 3rd N-type doped region and the 4th N-type doped region, and above the 3rd N-type doped region and the 4th N-type doped region;
One the 3rd P type doped region is positioned at this second p type wells, and is positioned at a side of the 4th N-type doped region, and is coupled to this output;
Wherein, this second N-type well is an independent well, to isolate other assembly.
6. commutation circuit as claimed in claim 5 is characterized in that, wherein the 3rd switch comprises:
One the 3rd N-type well is positioned at this first p type wells;
One the 4th P type doped region is positioned at the 3rd N-type well, and is coupled to this first end of this energy-storage travelling wave tube;
One the 5th P type doped region is positioned at the 3rd N-type well, and is coupled to this input;
One the 3rd grid layer, between the 4th P type doped region and the 5th P type doped region, and above the 4th P type doped region and the 5th P type doped region; And
One the 4th N-type doped region is positioned at the 3rd N-type well, and is positioned at a side of the 5th P type doped region.
7. commutation circuit as claimed in claim 6 is characterized in that, wherein the 4th switch comprises:
One the 4th N-type well is positioned at this first p type wells;
One the 3rd p type wells is positioned at the 4th N-type well;
One the 5th N-type doped region is positioned at the 3rd p type wells, and is coupled to this second end of this energy-storage travelling wave tube;
One the 6th N-type doped region is positioned at the 3rd p type wells, and is positioned at a side of the 5th N-type doped region, and is coupled to this output;
One the 4th grid layer, between the 5th N-type doped region and the 6th N-type doped region, and above between the 5th N-type doped region and the 6th N-type doped region; And
One the 6th P type doped region is positioned at the 3rd p type wells, and is positioned at a side of the 6th N-type doped region, and is coupled to this output;
Wherein, the 4th N-type well is an independent well, to isolate other assembly.
8. commutation circuit as claimed in claim 1 is characterized in that, wherein this energy-storage travelling wave tube is an electric capacity or an inductance.
9. commutation circuit as claimed in claim 1 is characterized in that, wherein this first switch, this second switch, the 3rd switch and the 4th switch are a field-effect transistor, transmission lock or a bipolarity junction transistor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102116939A TWI486929B (en) | 2013-05-13 | 2013-05-13 | Can produce self-voltage or negative voltage switching circuit |
| TW102116939 | 2013-05-13 |
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| CN103296881A true CN103296881A (en) | 2013-09-11 |
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| CN201310195031.2A Active CN103296881B (en) | 2013-05-13 | 2013-05-22 | Switching circuit capable of automatically generating positive voltage or negative voltage |
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| CN104867465A (en) * | 2015-05-11 | 2015-08-26 | 深圳市华星光电技术有限公司 | Negative-voltage signal generating circuit |
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Also Published As
| Publication number | Publication date |
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| CN103296881B (en) | 2016-12-28 |
| TW201443848A (en) | 2014-11-16 |
| TWI486929B (en) | 2015-06-01 |
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