CN103296572B - 一种采用环形腔结构的气体激光器放大系统 - Google Patents
一种采用环形腔结构的气体激光器放大系统 Download PDFInfo
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- CN103296572B CN103296572B CN201310220503.5A CN201310220503A CN103296572B CN 103296572 B CN103296572 B CN 103296572B CN 201310220503 A CN201310220503 A CN 201310220503A CN 103296572 B CN103296572 B CN 103296572B
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CN201310220503.5A CN103296572B (zh) | 2013-06-05 | 2013-06-05 | 一种采用环形腔结构的气体激光器放大系统 |
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CN201310220503.5A CN103296572B (zh) | 2013-06-05 | 2013-06-05 | 一种采用环形腔结构的气体激光器放大系统 |
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CN103296572A CN103296572A (zh) | 2013-09-11 |
CN103296572B true CN103296572B (zh) | 2015-07-15 |
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Families Citing this family (3)
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EP3327880B1 (en) * | 2015-07-22 | 2019-09-11 | Academy of Opto-Electronics Chinese Academy of Sciences | Excimer laser system with annular chamber structure |
CN104993364A (zh) * | 2015-07-22 | 2015-10-21 | 中国科学院光电研究院 | 一种具有环形腔结构的准分子激光系统 |
CN110824852A (zh) * | 2018-08-13 | 2020-02-21 | 台湾积体电路制造股份有限公司 | 激光系统以及光刻设备 |
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CN102187533A (zh) * | 2008-10-21 | 2011-09-14 | 西默股份有限公司 | 极高功率激光腔光学改进 |
CN102810810A (zh) * | 2012-03-02 | 2012-12-05 | 中国科学院光电研究院 | 单腔双电极放电腔及准分子激光器 |
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US6625191B2 (en) * | 1999-12-10 | 2003-09-23 | Cymer, Inc. | Very narrow band, two chamber, high rep rate gas discharge laser system |
US7167499B2 (en) * | 2001-04-18 | 2007-01-23 | Tcz Pte. Ltd. | Very high energy, high stability gas discharge laser surface treatment system |
JP4907865B2 (ja) * | 2004-11-09 | 2012-04-04 | 株式会社小松製作所 | 多段増幅型レーザシステム |
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CN102187533A (zh) * | 2008-10-21 | 2011-09-14 | 西默股份有限公司 | 极高功率激光腔光学改进 |
CN102810810A (zh) * | 2012-03-02 | 2012-12-05 | 中国科学院光电研究院 | 单腔双电极放电腔及准分子激光器 |
Non-Patent Citations (1)
Title |
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KrCl准分子激光振荡-放大系统的研究;姚永邦等;《应用激光》;19841231;第4卷(第6期);全文 * |
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Effective date of registration: 20200813 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee before: Aerospace Information Research Institute,Chinese Academy of Sciences Effective date of registration: 20200813 Address after: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee after: Aerospace Information Research Institute,Chinese Academy of Sciences Address before: 100094, No. 9 Deng Nan Road, Beijing, Haidian District Patentee before: Academy of Opto-Electronics, Chinese Academy of Sciences |
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