CN103281059A - Overheating resistant switching circuit - Google Patents
Overheating resistant switching circuit Download PDFInfo
- Publication number
- CN103281059A CN103281059A CN2013102334534A CN201310233453A CN103281059A CN 103281059 A CN103281059 A CN 103281059A CN 2013102334534 A CN2013102334534 A CN 2013102334534A CN 201310233453 A CN201310233453 A CN 201310233453A CN 103281059 A CN103281059 A CN 103281059A
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- triode
- nmos pipe
- circuit
- electrode
- grid
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Abstract
The invention discloses an overheating resistant switching circuit which comprises an NMOS tube Q1 and a triode Q2. A source electrode of the NMOS tube Q1 is connected with a port, a drain electrode of the NMOS tube Q1 is connected with an internal circuit, a grid electrode of the NMOS tube Q1 is connected with a collector electrode of the triode Q2, an emitting electrode of the triode Q2 is connected with the ground, and the grid electrode of the NMOS tube Q1 and a base electrode of the triode tube Q2 are both connected with one reference power supply. The overheating resistant switching circuit has the advantage that when the temperature inside an electronic instrument is over high, the port and the internal circuit are automatically disconnected, and therefore the circuit is protected.
Description
Technical field
The present invention relates to a kind of protective circuit, particularly relate to a kind of anti-overheat awitch circuit.
Background technology
A lot of electronic devices are often too high because of operating ambient temperature, thereby cause burning out, and like this user caused very big loss.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect of above-mentioned prior art, a kind of anti-overheat awitch circuit is provided, solve existing electronic equipment often because temperature is too high, and cause the defective that burns out.
Purpose of the present invention is achieved through the following technical solutions: anti-overheat awitch circuit, comprise NMOS pipe Q1 and triode Q2, the source electrode connectivity port of described NMOS pipe Q1, its drain electrode connects internal circuit, and the grid of NMOS pipe Q1 is connected to the collector electrode of triode Q2, the grounded emitter of triode Q2, the grid of described NMOS pipe Q1 and the base stage of triode Q2 all are connected on the reference power supply.Generally speaking; be conducting state between the source electrode of NMOS pipe Q1 and the drain electrode; and triode Q2 is cut-off state, is communicated with when making port with internal circuit, when temperature is too high; the base stage of triode Q2 and the voltage between the emitter reduce; make triode Q2 conducting, thereby drag down the grid level of NMOS pipe Q1, make NMOS pipe Q1 close; namely disconnect the connection of port to internal circuit, protected circuit.
Further, be provided with a resistance R between the grid of described triode Q2 collector electrode and NMOS pipe Q1, protection triode Q2.
The invention has the beneficial effects as follows: when the electronic instrument internal temperature was too high, close port arrived the connection of internal circuit automatically, thereby has protected circuit.
Description of drawings
Fig. 1 is the structural representation of embodiment 1;
Fig. 2 is the structural representation of embodiment 2.
Embodiment
The present invention is described in further detail below in conjunction with embodiment, but structure of the present invention is not limited only to following examples:
[embodiment 1]
As shown in Figure 1, anti-overheat awitch circuit, comprise NMOS pipe Q1 and triode Q2, the source electrode connectivity port of described NMOS pipe Q1, its drain electrode connects internal circuit, and the grid of NMOS pipe Q1 is connected to the collector electrode of triode Q2, the grounded emitter of triode Q2, and the grid of described NMOS pipe Q1 and the base stage of triode Q2 all are connected on the reference power supply.Generally speaking; be conducting state between the source electrode of NMOS pipe Q1 and the drain electrode; and triode Q2 is cut-off state, is communicated with when making port with internal circuit, when temperature is too high; the base stage of triode Q2 and the voltage between the emitter reduce; make triode Q2 conducting, thereby drag down the grid level of NMOS pipe Q1, make NMOS pipe Q1 close; namely disconnect the connection of port to internal circuit, protected circuit.
[embodiment 2]
As Fig. 2, the structure of present embodiment and embodiment 1 basically identical, difference is to be provided with a resistance R, protection triode Q2 between the grid of triode Q2 collector electrode and NMOS pipe Q1.
Claims (2)
1. prevent the overheat awitch circuit, it is characterized in that, comprise NMOS pipe Q1 and triode Q2, the source electrode connectivity port of described NMOS pipe Q1, its drain electrode connects internal circuit, and the grid of NMOS pipe Q1 is connected to the collector electrode of triode Q2, the grounded emitter of triode Q2, and the grid of described NMOS pipe Q1 and the base stage of triode Q2 all are connected on the reference power supply.
2. anti-overheat awitch circuit according to claim 1 is characterized in that, is provided with a resistance R between the grid of described triode Q2 collector electrode and NMOS pipe Q1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102334534A CN103281059A (en) | 2013-06-14 | 2013-06-14 | Overheating resistant switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102334534A CN103281059A (en) | 2013-06-14 | 2013-06-14 | Overheating resistant switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103281059A true CN103281059A (en) | 2013-09-04 |
Family
ID=49063528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013102334534A Pending CN103281059A (en) | 2013-06-14 | 2013-06-14 | Overheating resistant switching circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103281059A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103795388A (en) * | 2014-02-10 | 2014-05-14 | 上海三一重机有限公司 | Integrated circuit switching structure and method based on MOS tube |
| CN105790739A (en) * | 2015-01-12 | 2016-07-20 | 英飞凌科技股份有限公司 | Protected Switching Element |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6952333B1 (en) * | 2003-09-15 | 2005-10-04 | National Semiconductor Corporation | ESD protection circuit for high-voltage, high DV/DT pads |
| CN101171680A (en) * | 2005-12-07 | 2008-04-30 | 罗姆股份有限公司 | Electrostatic breakdown protection circuit and semiconductor integrated circuit device provided with same |
| CN101588167A (en) * | 2009-06-18 | 2009-11-25 | 广州润芯信息技术有限公司 | Electrifying reset and undervoltage turnoff circuit |
| CN203278207U (en) * | 2013-06-14 | 2013-11-06 | 成都锐奕信息技术有限公司 | Switching circuit with overheat switch-off function |
-
2013
- 2013-06-14 CN CN2013102334534A patent/CN103281059A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6952333B1 (en) * | 2003-09-15 | 2005-10-04 | National Semiconductor Corporation | ESD protection circuit for high-voltage, high DV/DT pads |
| CN101171680A (en) * | 2005-12-07 | 2008-04-30 | 罗姆股份有限公司 | Electrostatic breakdown protection circuit and semiconductor integrated circuit device provided with same |
| CN101588167A (en) * | 2009-06-18 | 2009-11-25 | 广州润芯信息技术有限公司 | Electrifying reset and undervoltage turnoff circuit |
| CN203278207U (en) * | 2013-06-14 | 2013-11-06 | 成都锐奕信息技术有限公司 | Switching circuit with overheat switch-off function |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103795388A (en) * | 2014-02-10 | 2014-05-14 | 上海三一重机有限公司 | Integrated circuit switching structure and method based on MOS tube |
| CN105790739A (en) * | 2015-01-12 | 2016-07-20 | 英飞凌科技股份有限公司 | Protected Switching Element |
| CN105790739B (en) * | 2015-01-12 | 2022-03-08 | 英飞凌科技股份有限公司 | Protected switch element |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130904 |