CN103795388A - Integrated circuit switching structure and method based on MOS tube - Google Patents
Integrated circuit switching structure and method based on MOS tube Download PDFInfo
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- CN103795388A CN103795388A CN201410046899.0A CN201410046899A CN103795388A CN 103795388 A CN103795388 A CN 103795388A CN 201410046899 A CN201410046899 A CN 201410046899A CN 103795388 A CN103795388 A CN 103795388A
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Abstract
The invention discloses an integrated circuit switching structure and method based on an MOS tube and belongs to the circuit control field. The integrated circuit switching structure comprises a power supply 1, a field-effect tube 2, an outer control signal generator 3, an inner signal generator 4 and a follow-up circuit 5. The power supply 1, the field-effect tube 2 and the follow-up circuit 5 are sequentially connected. The outer control signal generator 3 and the inner signal generator 4 are connected with the field-effect tube 2 respectively. The field-effect tube 2 carries out on-off between the power supply 1 and the follow-up circuit 5 according to control signals transmitted by the outer control signal generator 3 and the inner control signal generator 4. According to the technical scheme, the MOS tube serves as a control switch of an integrated circuit, the influences on the integrated circuit due to faults of the control signals are effectively reduced, the electromagnetic interference is effectively relieved, the controllable delay power failure can be achieved, the problems of contact oxidation and regular maintaining do not exist and the circuit can be better protected.
Description
Technical field
The invention belongs to plant equipment control field, relate to a kind of integrated circuit switch, relate in particular to a kind of integrated circuit switch structure and method based on metal-oxide-semiconductor.
Background technology
Industry circuit design need to be considered the fail safe of product, and the reliability that should as far as possible improve circuit reduces failure rate, to avoid accident to occur.
The power supply of integrated circuit at present generally adopts mechanical type electromagnetic relay to realize, by controlling the adhesive and the break-make that disconnects control circuit power supply of electromagnetic relay.Its theory diagram as shown in Figure 1.
The problem of doing is like this:
1, cannot avoid external signal fault to have problems.
2, use mechanical type electromagnetic relay can produce electromagnetic interference, contact oxidation easily causes loose contact, and contact shorter needs in useful life regularly replaces, and control signal consumed power is higher.
3, the time of the delay cut-off of mechanical type electromagnetic relay own is relatively fixing.
Summary of the invention
In view of this; the present invention is using the switch as integrated circuit control by employing metal-oxide-semiconductor; effectively reduce the impact that control signal fault produces integrated circuit; and effectively reduce electromagnetic interference; realize controllable time delay power-off; there is not contact oxidation and periodic maintenance problem, better realized circuit protection.
For achieving the above object, concrete technical scheme is as follows:
On the one hand, a kind of integrated circuit switch structure based on metal-oxide-semiconductor is provided, for the switch control of integrated circuit power supply, comprise power supply, field effect transistor, external control signal generator, internal signal generator and subsequent conditioning circuit, described power supply is connected with described field effect transistor, described field effect transistor is connected with described subsequent conditioning circuit, described external control signal generator is connected with described field effect transistor respectively with internal signal generator, break-make described in described field effect transistor control between power supply and described subsequent conditioning circuit, described external control signal generator is by sending the break-make of field effect transistor described in external control signal control, described internal signal generator is by sending the break-make of field effect transistor described in internal signal control.
Preferably, described internal signal generator is connected with described subsequent conditioning circuit, and sends internal control signal according to the situation of the described subsequent conditioning circuit detecting.
Preferably, also comprise control object, described internal control signal generator is connected with described control object, and sends internal control signal according to the situation of described the control object detecting.
Preferably, described internal control signal generator is hardware circuit or controls software.
Preferably, described field effect transistor is metal-oxide-semiconductor field effect transistor or metal insulater-semiconductor field-effect transistor.
Preferably, described field effect transistor is n type field effect transistor or p type field effect transistor.
On the other hand, provide a kind of integrated circuit switch method based on metal-oxide-semiconductor, comprise the following steps:
Step 1, described external control signal generator and internal control signal generator send control signal;
With respect to prior art, the advantage of technical scheme of the present invention has:
1, can effectively reduce the impact that external control signal or internal control signal fault produce integrated circuit;
2, effectively reduce electromagnetic interference, do not have contact oxidation and periodic maintenance problem;
3, can realize as required controllable time delay power-off by internal control signal, can better realize circuit protection.
Accompanying drawing explanation
The accompanying drawing that forms a part of the present invention is used to provide a further understanding of the present invention, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the structural representation of prior art
Fig. 2 is the structural representation of the embodiment of the present invention.
Wherein, 1 is that power supply, 2 is that field effect transistor, 3 is that external control signal generator, 4 is that internal control signal generator, 5 is subsequent conditioning circuit.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
It should be noted that, in the situation that not conflicting, the feature in embodiment and embodiment in the present invention can combine mutually.
Below with reference to accompanying drawing, embodiments of the invention are done to concrete explaination.
A kind of integrated circuit switch structure and method based on metal-oxide-semiconductor of embodiments of the invention as shown in Figure 2, for the switch control of integrated circuit power supply, structure comprises power supply 1, field effect transistor 2, external control signal generator 3, internal signal generator 4 and subsequent conditioning circuit 5.
Power supply 1 is connected with field effect transistor 2, and field effect transistor 2 is connected with subsequent conditioning circuit 5.External control signal generator 3 is connected with field effect transistor 2 respectively with internal signal generator 4.Field effect transistor 2 is controlled the break-make between power supply 1 and subsequent conditioning circuit 5.External control signal generator 3 is by sending the break-make of external control signal control field effect transistor 2, and internal signal generator 4 is by sending the break-make of internal signal control field effect transistor 2.
Method, comprising:
Step 1, external control signal generator 3 and internal control signal generator 4 send control signal;
Embodiments of the invention are by adopting the switch of metal-oxide-semiconductor as integrated circuit control; effectively reduce the impact that control signal fault produces integrated circuit; and effectively reduce electromagnetic interference; realize controllable time delay power-off; there is not contact oxidation and periodic maintenance problem, better realized circuit protection.
As shown in Figure 2, in an embodiment of the present invention, field effect transistor 2 is metal-oxide-semiconductor, is preferably metal-oxide-semiconductor field effect transistor or metal insulater-semiconductor field-effect transistor.
In an embodiment of the present invention, the switch with metal-oxide-semiconductor as integrated circuit control, by the break-make of control signal co-controlling metal-oxide-semiconductor in the outer control signal of plate and plate, realizes the switch control to integrated circuit.
The internal control signal of metal-oxide-semiconductor can be provided by hardware circuit or software control, by the detection case to subsequent conditioning circuit and control object, changes as required control signal.
Above specific embodiments of the invention be have been described in detail, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and alternative also all among category of the present invention.Therefore, equalization conversion and the modification done without departing from the spirit and scope of the invention, all should contain within the scope of the invention.
Claims (7)
1. the integrated circuit switch structure based on metal-oxide-semiconductor, for the switch control of integrated circuit power supply, it is characterized in that, comprise power supply (1), field effect transistor (2), external control signal generator (3), internal control signal generator (4) and subsequent conditioning circuit (5), described power supply (1) is connected with described field effect transistor (2), described field effect transistor (2) is connected with described subsequent conditioning circuit (5), described external control signal generator (3) is connected with described field effect transistor (2) respectively with internal control signal generator (4), described field effect transistor (2) is controlled the break-make between described power supply (1) and described subsequent conditioning circuit (5), described external control signal generator (3) is by sending the break-make of field effect transistor (2) described in external control signal control, described internal control signal generator (4) is by sending the break-make of field effect transistor (2) described in internal signal control.
2. the integrated circuit switch structure based on metal-oxide-semiconductor as claimed in claim 1, it is characterized in that, described internal control signal generator (4) is connected with described subsequent conditioning circuit (5), and sends internal control signal according to the situation of the described subsequent conditioning circuit (5) detecting.
3. the integrated circuit switch structure based on metal-oxide-semiconductor as claimed in claim 2, it is characterized in that, also comprise control object, described internal control signal generator (4) is connected with described control object, and sends internal control signal according to the situation of described the control object detecting.
4. the integrated circuit switch structure based on metal-oxide-semiconductor as claimed in claim 1, is characterized in that, described internal control signal generator (4) is hardware circuit or controls software.
5. the integrated circuit switch structure based on metal-oxide-semiconductor as claimed in claim 1, is characterized in that, described field effect transistor (2) is metal-oxide-semiconductor field effect transistor or metal insulater-semiconductor field-effect transistor.
6. the integrated circuit switch structure based on metal-oxide-semiconductor as claimed in claim 1, is characterized in that, described field effect transistor (2) is n type field effect transistor or p type field effect transistor.
7. the integrated circuit switch method based on metal-oxide-semiconductor, for the integrated circuit switch structure as described in claim 1 to 6 any one, is characterized in that, comprises the following steps:
Step 1, described external control signal generator (3) and internal control signal generator (4) send control signal;
Step 2, described field effect transistor (2) realizes break-make according to control signal;
Step 3, realizes the break-make of described power supply (1) and described subsequent conditioning circuit (5) by the break-make of described field effect transistor (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410046899.0A CN103795388A (en) | 2014-02-10 | 2014-02-10 | Integrated circuit switching structure and method based on MOS tube |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410046899.0A CN103795388A (en) | 2014-02-10 | 2014-02-10 | Integrated circuit switching structure and method based on MOS tube |
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| CN103795388A true CN103795388A (en) | 2014-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410046899.0A Pending CN103795388A (en) | 2014-02-10 | 2014-02-10 | Integrated circuit switching structure and method based on MOS tube |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101458901A (en) * | 2007-12-12 | 2009-06-17 | 群康科技(深圳)有限公司 | Power supply circuit for LCD |
| CN101470507A (en) * | 2007-12-28 | 2009-07-01 | 鸿富锦精密工业（深圳）有限公司 | Power supply control circuit |
| CN103281059A (en) * | 2013-06-14 | 2013-09-04 | 成都锐奕信息技术有限公司 | Overheating resistant switching circuit |
-
2014
- 2014-02-10 CN CN201410046899.0A patent/CN103795388A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101458901A (en) * | 2007-12-12 | 2009-06-17 | 群康科技(深圳)有限公司 | Power supply circuit for LCD |
| CN101470507A (en) * | 2007-12-28 | 2009-07-01 | 鸿富锦精密工业（深圳）有限公司 | Power supply control circuit |
| CN103281059A (en) * | 2013-06-14 | 2013-09-04 | 成都锐奕信息技术有限公司 | Overheating resistant switching circuit |
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Application publication date: 20140514 |