CN103280615A - Reconfigurable microwave low-pass filter with MEMS switch - Google Patents
Reconfigurable microwave low-pass filter with MEMS switch Download PDFInfo
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- CN103280615A CN103280615A CN2013102447890A CN201310244789A CN103280615A CN 103280615 A CN103280615 A CN 103280615A CN 2013102447890 A CN2013102447890 A CN 2013102447890A CN 201310244789 A CN201310244789 A CN 201310244789A CN 103280615 A CN103280615 A CN 103280615A
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Abstract
The invention relates to a reconfigurable microwave low-pass filter with an MEMS switch. The reconfigurable microwave low-pass filter comprises input ends, output ends, an MEMS bridge, bias voltage mats, bias voltage wires, ground wires, signal wires and bridge piers. MEMS film bridges are distributed perpendicular to a first ground wire and a second ground wire in sequence. The signal wires are connected between adjacent MEMS film bridges. The bridge piers are respectively arranged at the two ends of one corresponding MEMS film bridge. The input ends and the output ends are respectively and correspondingly connected to the corresponding ends of the ground wires and the corresponding ends of the signal wires. The bias voltage mats are respectively connected to the bridge piers at the corresponding ends of the MEMS film bridges through the bias voltage wires. The reconfigurable microwave low-pass filter with the MEMS switch has the advantages that the MEMS switch on a silicon wafer replaces traditional switching elements such as a PIN switching diode, or a variable capacitance diode, or an FET to achieve the frequency reconstitution of the filter, a coplanar waveguide transmission line replaces a traditional coplanar waveguide transmission line on a PCB, the structure is compact and simple, the size is tiny, a control circuit is low in consumption, the working frequency is high, the reconfigurable microwave low-pass filter can be compatible with a traditional IC technology, the technology is mature, cost is low, and the reconfigurable microwave low-pass filter is suitable for mass production.
Description
Technical field
The present invention relates to the technical field that micro mechanical system and microwave are learned, relate in particular to a kind of reconfigurable microwave low-pass filter that contains mems switch.
Background technology
Reconfigurable microwave low-pass filter is one of critical elements in the microwave wireless communication system.RF micro mechanical system filter have low-loss, high isolation, high linearity, volume little, be easy to and characteristics such as IC, MMIC circuit be integrated, can make the variation of structure and the characteristic generation essence of traditional radio frequency, microwave, millimetric wave device circuit.Size, the strong signal of inhibition that it can reduce multiwave simulation receiving front-end subsystem disturb and the conversion of realization multiband, especially more can embody its high-performance quality in millimere-wave band.The restructural tunable filter can reduce multiwave simulation receiving front-end subsystem size, suppress big signal and disturb and finish a plurality of wave bands conversions, have good high frequency performance.
Traditional reconfigurable microwave low-pass filter is based on coaxial line or microstrip line, be produced on the printed circuit board (PCB), volume is big, be unfavorable for IC technology integrated, traditional in addition reconfigurable microwave low-pass filter of resonance frequency generally uses pin diode switch and FET switch to realize the adjustable of filter frequencies, and these switches need a large amount of biasing circuits, make that the insertion loss of filter is big, size is big, is not suitable for the application of Miniature RF receiver front end.
Summary of the invention
The object of the invention is to overcome the deficiency of above prior art, and a kind of reconfigurable microwave low-pass filter that contains mems switch and preparation method thereof is provided, and specifically has following technical scheme to realize:
The described reconfigurable microwave low-pass filter that contains mems switch, comprise input, output, MEMS bridge, bias pad, bias line, ground wire, holding wire and bridge pier, described MEMS film bridge is respectively a MEMS film bridge 31, the 2nd MEMS film bridge 32, the 3rd MEMS film bridge 33, the 4th MEMS film bridge 34 and the 5th MEMS film bridge 35; Described bias pad is respectively first bias pad 41, second bias pad 42 and the 3rd bias pad 43; Described ground wire is respectively first ground wire 51 and second ground wire 52; Described first ground wire 50 and the 51 parallel distributions of second ground wire, a described MEMS film bridge 31, the 2nd MEMS film bridge 32, the 3rd MEMS film bridge 33, the 4th MEMS film bridge 34 and the 5th MEMS film bridge 35 distribute perpendicular to first, second ground wire successively; Be connected with described holding wire between described adjacent MEMS film bridge; Described bridge pier is located at the two ends of corresponding MEMS film bridge respectively; Described input, output be the corresponding corresponding end that is connected in ground wire and holding wire respectively; Described first bias pad 41 connects the bridge pier of the first, the 5th MEMS film bridge corresponding end respectively by bias line, described second bias pad 42 is by the corresponding bridge pier that connects the 3rd MEMS film bridge corresponding end of bias line, and described second bias pad 43 connects the bridge pier of the second, the 4th MEMS film bridge corresponding end respectively by bias line.
The described further design that contains the reconfigurable microwave low-pass filter of mems switch is, described holding wire is respectively first holding wire 71, secondary signal line 72, the 3rd holding wire 73 and the 4th holding wire 74, connects the first, second, third and the 4th holding wire successively between the adjacent bridge pier in twos in described five bridge piers.
The described further design that contains the reconfigurable microwave low-pass filter of mems switch is that described second, third holding wire contains and lacks the earth subsidence structure.
The described further design that contains the reconfigurable microwave low-pass filter of mems switch is, described bridge pier is respectively first bridge pier 80, second bridge pier 81, the 3rd bridge pier 82, the 4th bridge pier 83, the 5th bridge pier 84, the 6th bridge pier 85, the 7th bridge pier 86, the 8th bridge pier 87, the 9th bridge pier 88 and the tenth bridge pier 89, and described the first, second, third, fourth, the 5th bridge pier is corresponding successively respectively is located at the first, second, third, fourth, the 5th MEMS film bridge with respect to an end of first ground outside; Described the 6th, the 7th, the 8 9th, the tenth bridge pier is corresponding successively respectively is located at the first, second, third, fourth, the 5th MEMS film bridge with respect to an end of second ground outside.
The described further design that contains the reconfigurable microwave low-pass filter of mems switch is, described bias line is respectively first bias line 61, second bias line 62, the 3rd bias line 63, the 4th bias line 64 and the 5th bias line 65, the two ends of described first bias line 61 connect first bridge pier 80 and first bias pad 41 respectively, described second bias line 62 connects the 5th bridge pier 84 and first bias pad 41 respectively, the two ends of described the 3rd bias line 63 connect the 7th bridge pier 86 and the 3rd bias pad 43 respectively, the two ends of described the 4th bias line 64 connect the 8th bridge pier 87 and second bias pad 42 respectively, and the two ends of described the 5th bias line 65 connect the 9th bridge pier 88 and the 3rd bias pad 43 respectively.
The described further design that contains the reconfigurable microwave low-pass filter of mems switch is that described input is respectively first input end 11, second input 12 and the 3rd input 13; Described output is respectively first output 21, second output 22 and the 3rd output 23; Described first, second, third input connects the corresponding end of first ground wire, first holding wire and second ground wire respectively, and described first, second, third output connects the corresponding end of first ground wire, the 4th holding wire and second ground wire respectively.
According to the described preparation method who contains the reconfigurable microwave low-pass filter of mems switch, adopt six mask plates altogether one to No. six, the concrete operations step is as follows:
1) two inches 500 μ m are thick silicon chip places H2O2, and in the mixed liquor of H2SO4, washed with de-ionized water is put into cleaning fluid to silicon chip No. one then, boil to boiling 10 minutes, and washed with de-ionized water, a described cleaning fluid is NH
4OH, H
2O
2, the deionized water mixed liquor; At last silicon chip is put into No. two cleaning fluids and boil to boiling, deionized water rinsing, drying, oven dry, described No. two cleaning fluids are HCL, H
2O
2And the mixed liquor of deionized water);
2) be 1.5 μ m silicon dioxide layers at silicon chip surface thermal oxide growth thickness, process conditions: feed 8 ~ 12 minutes dried oxygen, fed wet oxygen in 95 ~ 105 minutes, add 18 ~ 22 minutes again and feed dry-oxygen oxidation;
3) hydatogenesis chromium layer and gold layer successively on silicon dioxide layer, thickness is respectively 800 and 3000, and process conditions are: temperature and vacuum degree in the vapourizing furnace are respectively 230 ℃ ~ 250 ℃ and 10 * 10
-5Torr;
4) positive glue is covered on the surface of mask plate figure with exterior domain of silicon chip by a mask plate, reserve the figure that needs plating, electrogilding forms three inputs, three outputs, ten bridge piers and three bias pad, thickness of plating layer is 2 μ m, removes photoresist and prepares next step operation;
5) No. two mask plates of the method for a positive mask plate of glue photoetching difference photoetching, No. three mask plates, electrogilding forms two ground wires, four holding wires, five bias lines, thickness is respectively 2 μ m, plating this time makes the thickness of input/output terminal, bias pad and bridge pier increase to 3 μ m by original 2 μ m, removes photoresist and prepares next step operation;
6) negative No. two mask versions of glue photoetching, be placed in 115 ℃ ~ 125 ℃ the baking oven post bake after the development 25 ~ 35 minutes, plasma etching is 20 seconds then, successively gold layer, the titanium layer of not electroplating part are eroded at normal temperatures at last, keep three input/output terminals, two ground wires, four holding wires, three bias pad, five bias lines and ten bridge piers, the solution of acid gilding be KI, I
2And H
2The mixed liquor of O, the solution of corrosion chromium is phosphoric acid;
7) adopt the oxygen gas plasma etching to remove photoresist, etching power, oxygen flow, etch period are respectively 50W, 60ml/min and 18 ~ 22 seconds;
8) be the silicon nitride film of 0.3 μ m with chemical vapor deposition at silicon chip surface deposit one layer thickness, ammonia flow, silane flow rate and temperature are respectively 28ml/min, 560ml/min and 270 ℃ ~ 290 ℃;
9) cover figure on No. four plates with positive glue, the silicon nitride film that protection needs, with SF6 gaseous plasma etch silicon nitride film, the flow of power, SF6 gas and etch period are respectively 50w, 2.4ml/s and 75 ~ 85 seconds;
10) under 2000 rev/mins the rotating speed, the polyimide film that at silicon chip surface spin coating one layer thickness is is as sacrifice layer, 85 ℃ ~ 95 ℃ were dried by the fire 55 ~ 65 minutes down, dried by the fire 25 ~ 35 minutes down at 125 ℃ ~ 135 ℃ again, the thick positive glue of spin coating 2 μ m on sacrifice layer, by No. 5 mask plate photoetching, positive glue is removed in the back of developing, obtain the sacrifice layer figure, then silicon chip was solidified 1 hour down at 260 ℃;
11) 5 * 10
-5Under the vacuum degree of Torr, with siliceous 4% and thickness be that the alusil alloy film evaporation deposition of 0.5 μ m is on the surface of silicon chip;
12) negative No. six mask plates of glue photoetching, under 65 ℃ ~ 75 ℃ with the H of silicon slice placed at concentration 〉=85%
3PO
4In the solution, the bubble that corrosion alusil alloy film is emerged to the phosphoric acid solution is very faint, forms the bridge film, and silicon chip cleans up with deionized water rapidly;
13) plasma etching removes negative glue and sacrifice layer, and plasma etching power, oxygen flow and nitrogen flow are respectively 50w, 60ml/s and 2.8ml/s, obtain five unsettled bridge membrane structures, and this structure is exactly the mems switch movable contact flat.
Advantage of the present invention is as follows:
1, this filter is by the mems switch and the coplanar waveguide transmission line be combined into that are deposited on the silicon chip, the former substitutes the frequency reconstruct that traditional switching devices such as PIN switching diode, variable capacitance diode or FET are realized filter, the latter has substituted the coplanar waveguide transmission line on traditional pcb board, and the advantage that compact conformation is simple, size is small, isolation is good, the insertion loss is low, control circuit is low in energy consumption, operating frequency is high is arranged.
2, this filter.Can with traditional IC process compatible, be integrated on the substrate of High Resistivity Si, technical maturity, with low cost, be suitable for producing in batches.
Description of drawings
Fig. 1 is described restructural filter graph architecture.
Fig. 2 is the schematic diagram of a described mask plate figure.
Fig. 3 is the schematic diagram of described No. two mask plate figures.
Fig. 4 is the schematic diagram of described No. three mask plate figures.
Fig. 5 is the schematic diagram of described No. four mask plate figures.
Fig. 6 is the schematic diagram of described No. five mask plate figures.
Fig. 7 is the schematic diagram of described No. six mask plate figures.
Fig. 8 is the S parameter before the reconstruct of described restructural low pass filter.
Fig. 9 is the S parameter after the reconstruct of described restructural low pass filter.
Among the figure, 11-first input end, 12-second input, 13-the 3rd input, 21-first output, 22-second output and, 23-the 3rd output, 31-the one MEMS film bridge, 32-the 2nd MEMS film bridge, 33-the 3rd MEMS film bridge, 34-the 4th MEMS film bridge, 35-the 5th MEMS film bridge, 41-first bias pad, 42-second bias pad, 43-the 3rd bias pad, 51-first ground wire, 52-second ground wire, 61-first bias line, 62-second bias line, 63-the 3rd bias line, 64-the 4th bias line, 65-the 5th bias line, 71-first holding wire, 72-secondary signal line, 73-the 3rd holding wire, 74-the 4th holding wire, 80-first bridge pier, 81-second bridge pier, 82-the 3rd bridge pier, 83-the 4th bridge pier, 84-the 5th bridge pier, 85-the 6th bridge pier, 86-the 7th bridge pier, 87-the 8th bridge pier, 88-the 9th bridge pier, 89-the tenth bridge pier.
Embodiment
Below in conjunction with accompanying drawing the present invention program is elaborated.
The reconfigurable microwave low-pass filter that contains mems switch that present embodiment provides comprises input, output, MEMS bridge, bias pad, bias line, ground wire, holding wire and bridge pier.
MEMS film bridge is respectively a MEMS film bridge 31, the 2nd MEMS film bridge 32, the 3rd MEMS film bridge 33, the 4th MEMS film bridge 34 and the 5th MEMS film bridge 35.Bias pad is respectively first bias pad 41, second bias pad 42 and the 3rd bias pad 43.Ground wire is respectively first ground wire 51 and second ground wire 52.First ground wire 50 and the 51 parallel distributions of second ground wire.The one MEMS film bridge 31, the 2nd MEMS film bridge 32, the 3rd MEMS film bridge 33, the 4th MEMS film bridge 34 and the 5th MEMS film bridge 35 distribute perpendicular to first, second ground wire successively.Holding wire is respectively in first holding wire 71, secondary signal line 72, the 3rd holding wire 73 and 74, five bridge piers of the 4th holding wire between the adjacent in twos bridge pier and connects the first, second, third and the 4th holding wire successively.Wherein, second, third holding wire contains and lacks the earth subsidence structure.
Bridge pier is respectively that first bridge pier 80, second bridge pier 81, the 3rd bridge pier 82, the 4th bridge pier 83, the 5th bridge pier 84, the 6th bridge pier 85, the 7th bridge pier 86, the 8th bridge pier 87, the 9th bridge pier 88 and the tenth bridge pier 89, first, second, third, fourth, the 5th bridge pier are corresponding successively respectively is located at the first, second, third, fourth, the 5th MEMS film bridge with respect to an end of first ground outside; Six, the 7th, the 8 9th, the tenth bridge pier is corresponding successively respectively is located at the first, second, third, fourth, the 5th MEMS film bridge with respect to an end of second ground outside.
Input is respectively first input end 11, second input 12 and the 3rd input 13; Output is respectively first output 21, second output 22 and the 3rd output 23; First, second, third input connects the corresponding end of first ground wire 51, first holding wire 71 and second ground wire 52 respectively, and first, second, third output connects the corresponding end of first ground wire 51, the 4th holding wire 74 and second ground wire 52 respectively.
Bias line is respectively first bias line 61, second bias line 62, the 3rd bias line 63, the 4th bias line 64 and the 5th bias line 65, the two ends of first bias line 61 connect first bridge pier 80 and first bias pad 41 respectively, second bias line 62 connects the 5th bridge pier 84 and first bias pad 41 respectively, the two ends of the 3rd bias line 63 connect the 7th bridge pier 86 and the 3rd bias pad 43 respectively, the two ends that the two ends of the 4th bias line 64 connect the 8th bridge pier 87 and second bias pad, 42, the five bias lines 65 respectively connect the 9th bridge pier 88 and the 3rd bias pad 43 respectively.
The reconfigurable microwave low-pass filter that contains mems switch that provides according to present embodiment provides a kind of preparation method to comprise the steps:
1) two inches 500 μ m are thick silicon chip places H
2O
2: H
2SO
4The mixed liquor of=1:1, washed with de-ionized water is put into a cleaning fluid to silicon chip then and is boiled to boiling 10 minutes, washed with de-ionized water.The composition proportion of the cleaning fluid that present embodiment adopts is 27%NH
4OH:30%H
2O
2: deionized water=1:2:5; At last silicon chip is put into No. two cleaning fluids and boil to boiling deionized water rinsing, drying, oven dry.The composition proportion of No. two cleaning fluids that present embodiment adopts is 37% HCL:30%H
2O
2: deionized water=1:2:8.
2) be the silicon dioxide layer of 1.5 μ m at silicon chip surface thermal oxide growth thickness, process conditions: fed dried oxygen in 10 minutes, fed wet oxygen in 100 minutes, add 20 minutes again and feed dry-oxygen oxidation;
3) hydatogenesis chromium layer and gold layer successively on silicon dioxide layer, thickness is respectively 800 and 3000, and process conditions are: temperature and vacuum degree in the vapourizing furnace are respectively 250 ℃ and 10 * 10-5Torr;
4) positive glue is covered on the surface of mask plate figure with exterior domain of silicon chip by a mask plate, reserve the figure that needs plating, electrogilding forms three inputs, three outputs, ten bridge piers and three bias pad, thickness of plating layer is 2 μ m, removes photoresist and prepares next step operation;
5) No. two mask plates of the method for a positive mask plate of glue photoetching difference photoetching, No. three mask plates, two ground wires of electrogilding formation, four holding wires, five bias lines, thickness are respectively 2 μ m, this time plating makes the thickness of input/output terminal, bias pad and bridge pier increase to 3 μ m by original 2 μ m in addition, removes photoresist and prepares next step operation;
6) negative No. two mask versions of glue photoetching, be placed in 120 ℃ the baking oven post bake after the development 30 minutes, plasma etching is 20 seconds then, successively gold layer, the titanium layer of not electroplating part are eroded at normal temperatures at last, keep three input/output terminals, two ground wires, four holding wires, three bias pad, five bias lines and ten bridge piers, the prescription of the solution of acid gilding is KI:I
2: H
2O=20g:6g:100ml, the solution of corrosion chromium is phosphoric acid;
7) adopt the oxygen gas plasma etching to remove photoresist, etching power, oxygen flow, etch period are respectively 50W, 60ml/min and 20 seconds;
8) be the silicon nitride film of 0.3 μ m with chemical vapor deposition at silicon chip surface deposit one layer thickness, ammonia flow, silane flow rate and temperature are respectively 28ml/min, 560ml/min and 280 ℃;
9) with figure on No. four plates of positive glue covering, the silicon nitride film that protection needs.Use SF6 gaseous plasma etch silicon nitride film then, the flow of power, SF6 gas and etch period are respectively 50w, 2.4ml/s and 1 minute and 20 seconds;
10) under 2000 rev/mins the rotating speed, the polyimide film that at silicon chip surface spin coating one layer thickness is is as sacrifice layer, 90 ℃ were dried by the fire one hour down, dry by the fire half an hour down at 130 ℃ again, the thick positive glue of spin coating 2 μ m on sacrifice layer, by No. 5 mask plate photoetching, positive glue is removed in the back of developing, obtain the sacrifice layer figure, then silicon chip was solidified 1 hour down at 260 ℃;
11) 5 * 10
-5Under the vacuum degree of Torr, with siliceous 4% and thickness be that the alusil alloy film evaporation deposition of 0.5 μ m is on the surface of silicon chip;
12) negative No. six mask plates of glue photoetching, under 70 ℃ with the H of silicon slice placed at concentration 〉=85%
3PO
4In the solution, the bubble that corrosion alusil alloy film is emerged to the phosphoric acid solution is very faint, forms the bridge film, and silicon chip cleans up with deionized water rapidly;
13) plasma etching removes negative glue and sacrifice layer, and plasma etching power, oxygen flow and nitrogen flow are respectively 50w, 60ml/s and 2.8ml/s, obtain five unsettled bridge membrane structures, and this structure is exactly the mems switch movable contact flat.
The forward and backward 3dB cut-off frequency of this filter reconstruct is respectively 10.5GHz and 16.8GHz.This restructural low pass filter is by the function of cutting out and open to obtain reconstruct of five mems switches, before the reconstruct, 28V voltage one end is added on bias pad 41 and 42, the other end is added in the 3rd bias pad 52 on first bias pad 51, so because electrostatic interaction the one MEMS film bridge 31, the 3rd MEMS film bridge 33 and the 5th MEMS film bridge 35 closures, the 2nd MEMS film bridge 32 and the 4th MEMS film bridge 34 are opened, ignore the ghost effect of opening mems switch, be equivalent to the low pass filter series connection of two junior units, 28V voltage one end is added on first ground wire 51 and second ground wire 52, the other end is added on second bias pad 43, and this moment, the 2nd MEMS film bridge 32 and the 4th MEMS film bridge 34 were owing to the effect that is subjected to electrostatic force is closed.The filter of this moment be equivalent to one with original low pass filter unit structural similarity, but length of transmission line is original one times new filter, because holding wire length is before the reconstruct one times after the reconstruct, so the 3dB cut-off frequency of filter from 10.5 to 16.8GHz, band is outer to be suppressed greater than 27dB, thereby realizes the restructural of low pass filter.
Low pass filtered provided by the invention is particularly suitable for being applied in the phased filter array, makes the reconfigurable microwave low-pass filter in multiband and broadband, and advantages such as size is little, frequency is high, the insertion loss is little are arranged.In addition, it is integrated that this low pass filter also can be used for radio-frequency devices.
Claims (7)
1. reconfigurable microwave low-pass filter that contains mems switch, comprise input, output, MEMS bridge, bias pad, bias line, ground wire, holding wire and bridge pier, it is characterized in that described MEMS film bridge is respectively a MEMS film bridge, the 2nd MEMS film bridge, the 3rd MEMS film bridge, the 4th MEMS film bridge and the 5th MEMS film bridge; Described bias pad is respectively first bias pad, second bias pad and the 3rd bias pad; Described ground wire is respectively first ground wire and second ground wire; Described first ground wire and the second ground line parallel distribute, and a described MEMS film bridge, the 2nd MEMS film bridge, the 3rd MEMS film bridge, the 4th MEMS film bridge and the 5th MEMS film bridge distribute perpendicular to first, second ground wire successively; Be connected with described holding wire between described adjacent MEMS film bridge; Described bridge pier is located at the two ends of corresponding MEMS film bridge respectively; Described input, output be the corresponding corresponding end that is connected in ground wire and holding wire respectively; Described first bias pad connects the bridge pier of the first, the 5th MEMS film bridge corresponding end respectively by bias line, described second bias pad is by the corresponding bridge pier that connects the 3rd MEMS film bridge corresponding end of bias line, and described second bias pad connects the bridge pier of the second, the 4th MEMS film bridge corresponding end respectively by bias line.
2. the reconfigurable microwave low-pass filter that contains mems switch according to claim 1, it is characterized in that described holding wire is respectively first holding wire, secondary signal line, the 3rd holding wire and the 4th holding wire, connect the first, second, third and the 4th holding wire successively between the adjacent bridge pier in twos in described five bridge piers.
3. the reconfigurable microwave low-pass filter that contains mems switch according to claim 2 is characterized in that described second, third holding wire contains scarce earth subsidence structure.
4. the reconfigurable microwave low-pass filter that contains mems switch according to claim 1, it is characterized in that described bridge pier is respectively first bridge pier, second bridge pier, the 3rd bridge pier, the 4th bridge pier, the 5th bridge pier, the 6th bridge pier, the 7th bridge pier, the 8th bridge pier, the 9th bridge pier and the tenth bridge pier, described the first, second, third, fourth, the 5th bridge pier is corresponding successively respectively is located at the first, second, third, fourth, the 5th MEMS film bridge with respect to an end of first ground outside; Described the 6th, the 7th, the 8th, the 9th, the tenth bridge pier is corresponding successively respectively is located at the first, second, third, fourth, the 5th MEMS film bridge with respect to an end of second ground outside.
5. the reconfigurable microwave low-pass filter that contains mems switch according to claim 1, it is characterized in that described bias line is respectively first bias line, second bias line, the 3rd bias line, the 4th bias line and the 5th bias line, the two ends of described first bias line connect first bridge pier and first bias pad respectively, described second bias line connects the 5th bridge pier and first bias pad respectively, the two ends of described the 3rd bias line connect the 7th bridge pier and the 3rd bias pad respectively, the two ends of described the 4th bias line connect the 8th bridge pier and second bias pad respectively, and the two ends of described the 5th bias line connect the 9th bridge pier and the 3rd bias pad respectively.
6. the reconfigurable microwave low-pass filter that contains mems switch according to claim 1 is characterized in that described input is respectively first input end, second input and the 3rd input; Described output is respectively first output, second output and the 3rd output; Described first, second, third input connects the corresponding end of first ground wire, first holding wire and second ground wire respectively, and described first, second, third output connects the corresponding end of first ground wire, the 4th holding wire and second ground wire respectively.
7. as any described preparation method who contains the reconfigurable microwave low-pass filter of mems switch of claim 1-4, it is characterized in that adopt six mask plates altogether one to No. six, the concrete operations step is as follows:
1) two inches 500 μ m are thick silicon chip places H
2O
2, H
2SO
4Mixed liquor in, washed with de-ionized water is put into cleaning fluid to silicon chip No. one then, boil to the boiling 10 minutes, washed with de-ionized water, a described cleaning fluid is NH
4OH, H
2O
2, the deionized water mixed liquor; At last silicon chip is put into No. two cleaning fluids and boil to boiling, deionized water rinsing, drying, oven dry, described No. two cleaning fluids are HCL, H
2O
2And the mixed liquor of deionized water);
2) be 1.5 μ m silicon dioxide layers at silicon chip surface thermal oxide growth thickness, process conditions: feed 8 ~ 12 minutes dried oxygen, fed wet oxygen in 95 ~ 105 minutes, add 18 ~ 22 minutes again and feed dry-oxygen oxidation;
3) hydatogenesis chromium layer and gold layer successively on silicon dioxide layer, thickness is respectively 800 and 3000, and process conditions are: temperature and vacuum degree in the vapourizing furnace are respectively 230 ℃ ~ 250 ℃ and 10 * 10
-5Torr;
4) positive glue is covered on the surface of mask plate figure with exterior domain of silicon chip by a mask plate, reserve the figure that needs plating, electrogilding forms three inputs, three outputs, ten bridge piers and three bias pad, thickness of plating layer is 2 μ m, removes photoresist and prepares next step operation;
5) No. two mask plates of the method for a positive mask plate of glue photoetching difference photoetching, No. three mask plates, electrogilding forms two ground wires, four holding wires, five bias lines, thickness is respectively 2 μ m, plating this time makes the thickness of input/output terminal, bias pad and bridge pier increase to 3 μ m by original 2 μ m, removes photoresist and prepares next step operation;
6) negative No. two mask versions of glue photoetching, be placed in 115 ℃ ~ 125 ℃ the baking oven post bake after the development 25 ~ 35 minutes, plasma etching is 20 seconds then, successively gold layer, the titanium layer of not electroplating part are eroded at normal temperatures at last, keep three input/output terminals, two ground wires, four holding wires, three bias pad, five bias lines and ten bridge piers, the solution of acid gilding be KI, I
2And H
2The mixed liquor of O, the solution of corrosion chromium is phosphoric acid;
7) adopt the oxygen gas plasma etching to remove photoresist, etching power, oxygen flow, etch period are respectively 50W, 60ml/min and 18 ~ 22 seconds;
8) be the silicon nitride film of 0.3 μ m with chemical vapor deposition at silicon chip surface deposit one layer thickness, ammonia flow, silane flow rate and temperature are respectively 28ml/min, 560ml/min and 270 ℃ ~ 290 ℃;
9) with figure on No. four plates of positive glue covering, the silicon nitride film that protection needs is used SF
6Gaseous plasma etch silicon nitride film, power, SF
6The flow of gas and etch period are respectively 50w, 2.4ml/s and 75 ~ 85 seconds;
10) under 2000 rev/mins the rotating speed, the polyimide film that at silicon chip surface spin coating one layer thickness is is as sacrifice layer, 85 ℃ ~ 95 ℃ were dried by the fire 55 ~ 65 minutes down, dried by the fire 25 ~ 35 minutes down at 125 ℃ ~ 135 ℃ again, the thick positive glue of spin coating 2 μ m on sacrifice layer, by No. 5 mask plate photoetching, positive glue is removed in the back of developing, obtain the sacrifice layer figure, then silicon chip was solidified 1 hour down at 260 ℃;
11) 5 * 10
-5Under the vacuum degree of Torr, with siliceous 4% and thickness be that the alusil alloy film evaporation deposition of 0.5 μ m is on the surface of silicon chip;
12) negative No. six mask plates of glue photoetching, under 65 ℃ ~ 75 ℃ with the H of silicon slice placed at concentration 〉=85%
3PO
4In the solution, the bubble that corrosion alusil alloy film is emerged to the phosphoric acid solution is very faint, forms the bridge film, and silicon chip cleans up with deionized water rapidly;
13) plasma etching removes negative glue and sacrifice layer, and plasma etching power, oxygen flow and nitrogen flow are respectively 50w, 60ml/s and 2.8ml/s, obtain five unsettled bridge membrane structures, and this structure is exactly the mems switch movable contact flat.
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| CN105742124A (en) * | 2016-05-03 | 2016-07-06 | 北京邮电大学 | Microelectromechanical system switch |
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