CN105680132B - A kind of THz wave impedance easily tunes air coplanar waveguide structure and preparation method thereof - Google Patents
A kind of THz wave impedance easily tunes air coplanar waveguide structure and preparation method thereof Download PDFInfo
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- CN105680132B CN105680132B CN201610150646.7A CN201610150646A CN105680132B CN 105680132 B CN105680132 B CN 105680132B CN 201610150646 A CN201610150646 A CN 201610150646A CN 105680132 B CN105680132 B CN 105680132B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/12—Hollow waveguides
- H01P3/121—Hollow waveguides integrated in a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/002—Manufacturing hollow waveguides
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Abstract
The invention discloses a kind of THz wave impedances easily to tune air coplanar waveguide structure and preparation method thereof, which utilizes air bridges manufacturing technology, realizes the coplanar waveguide structure using air dielectric layer as main medium layer；Switch-mode metal layer is inserted between air dielectric layer and silicon carbide-based lamella simultaneously, and the groove Slot of certain size is provided on switch-mode metal layer.The present invention is by using air material as main medium layer, reduce the loss and dispersion of terahertz signal transmission, realize a kind of coplanar waveguide structure of high quality factor, the present invention is by using the silicon carbide-based lamella of high resistance type, for based on a kind of Novel Delivery cable architecture of third generation semiconductor THz devices and circuit design, reduce air dielectric layer thickness by adding in switch-mode metal layer, reduce difficulty of processing, in addition the fluting Slot sizes of metal switch layer are adjusted, impedance can be made to be more easy to tune.
Description
Technical field
The invention belongs to field of microelectronics, are related to terahertz wave band circuit interconnection technique, and in particular to a kind of THz wave
Impedance easily tunes air coplanar waveguide structure and preparation method thereof.
Background technology
THz wave has great scientific meaning and potential using value, and Terahertz Technology is increasingly by various countries
Government and the attention of scientist.Due to Terahertz transmission line be determine Terahertz circuit performance an important factor for one of, grind
Studying carefully the Novel Delivery cable architecture with low-loss, high q-factor, high power capacity, being easily integrated becomes the weight of research Terahertz Technology
Want a ring.
The usual type of transmission line is microstrip line and co-planar waveguide in microwave integrated circuit, however is total to when frequency is very high
Waveguide is exerted oneself with lower dispersion and loss, therefore waveguide of encouraging each other is more advantageous for high frequency band signal.But to Terahertz
The signal of wave band, the polar molecule absorptance of solid dielectric material is more significant, this causes using solid-state material as layer of dielectric material
Conventional co-planar waveguide can have significant dispersion and dielectric loss.Research finds to use air as the coplanar wave of dielectric material
Dispersion and loss can be substantially reduced by leading.Impedance-tumed to realize, the air dielectric layer of coplanar waveguide structure needs enough thickness
Degree.But in existing processing technology, if air dielectric layer is blocked up, signal wire metal layer and positive ground metal layer are not easy to add
Work, yielding fracture in kind, so as to make structural instability, installation error is larger.However if air dielectric layer is excessively thin, can not expire
The impedance design requirement of sufficient transmission line, causes hydraulic performance decline.Therefore, the technical field there is it is such as above-mentioned the shortcomings that and limit
System needs to overcome.
Invention content
It is an object of the invention to the problems in for the above-mentioned prior art, provide a kind of THz wave impedance and easily tune sky
Gas coplanar waveguide structure and preparation method thereof can reduce transmission line loss and while dispersion, resolved impedance spectroscopy tuning and
The problem of in terms of structural stability, while meet the performance of Terahertz transmission line and impedance design requirement.
To achieve these goals, THz wave impedance of the present invention easily tunes the technical side of air coplanar waveguide structure use
Case is：Including silicon carbide-based lamella, the silicon carbide-based lamella front deposits the switch-mode metal layer for offering groove Slot, ditch
By signal wire metal support column setting signal line metal layer on silicon carbide-based lamella at slot Slot, groove Slot both sides
Positive ground metal layer is provided with by positive ground metal layer support column respectively on switch-mode metal layer；
Between the signal wire metal layer and positive ground metal layer, signal wire metal support column and front grounded metal
Air dielectric layer is formed between layer support column and between the bottom of signal wire metal support column and switch-mode metal layer；The carbon
SiClx substrate layer backside deposition has back-side ground metal layer, and multiple back metal through-holes are offered on silicon carbide-based lamella,
Switch-mode metal layer is connected with back-side ground metal layer.
The silicon carbide-based lamella is made of high resistance type carbofrax material；The high resistance type carbofrax material is electricity
Resistance rate is more than 105The carbofrax material of ohmcm.
Groove Slot width on the switch-mode metal layer can be situated between according to the width and air of signal wire metal layer
The thickness of matter layer is adjusted, to obtain different size of impedance.
THz wave impedance of the present invention easily tune air coplanar waveguide structure preparation method use technical solution, including with
Lower step：
1) switch-mode metal layer is made on silicon carbide-based lamella；
One layer of photoresist is applied in the upper surface of silicon carbide-based lamella first, is toasted in an oven；Make switch-mode metal layer by lithography
Area of the pattern, impregnate, dried up with noble gas in developer solution；Finally switch-mode metal layer is produced in plating；
2) sacrificial layer is made on switch-mode metal layer obtained；
One layer of stripping glue is smeared first above switch-mode metal layer, is toasted in an oven；Then one is smeared on stripping glue
Layer photoresist, then toast in an oven；Later by reticle overlay alignment, signal wire metal support column and front are made by lithography
The area of the pattern of ground metal layer support column；It finally impregnates, is dried up with noble gas in developer solution, form sacrificial layer；The sacrifice
The area of the pattern of layer includes switching layer removal region and switching layer retains region, and switching layer removes region and supported for signal wire metal
The area of the pattern of column and positive ground metal layer support column；
3) furling plating is deposited on sacrificial layer and switch-mode metal layer；
4) mask layer of positive ground metal layer and signal wire metal layer pattern is made；
One layer of photoresist is smeared first on furling plating, is toasted in an oven；Then signal wire gold is made by lithography with reticle
Belong to layer and the area of the pattern of positive ground metal layer；It finally impregnates, is dried up with noble gas in developer solution, form mask layer, it is described
Mask layer includes furling plating removal region and furling plating retains region, and wherein furling plating removal area is positive ground metal layer and letter
The area of the pattern of number line metal layer；
5) to the furling plating not stopped by mask layer, positive ground metal layer support column, letter are produced by metal plating
Number line metal layer support column, positive ground metal layer and signal wire metal layer；
6) mask layer of back metal through-hole pattern is made；
The back side of silicon carbide-based lamella is thinned first, and smears one layer of photoresist, is toasted in an oven；Then it uses
Reticle makes the area of the pattern of back metal through-hole by lithography；It finally impregnates, is dried up with noble gas in developer solution, form mask layer；
The mask layer includes substrate back removal region and substrate back retains region, and wherein substrate back removal region is the back side
The area of the pattern of metal throuth hole；
7) pass through inductively coupled plasma etching through hole area at the silicon carbide-based lamella back side；
8) mask layer is washed away, metal plating makes back metal through-hole and back-side ground metal layer；
9) mask lithography glue is removed；
10) corrode furling plating, then wash away sacrificial layer, form overhead coplanar waveguide structure to get to for Terahertz
The silicon carbide-based impedance of wave easily tunes air coplanar waveguide structure.
The plating layer thickness is 100 nanometers, including 20 nanometers for electrode tip metal and electricity after raising annealing
The Ti layers of adhesion strength and 80 nanometers of Au layers for being used to reduce resistance conductive layer between gold-plated.
The step 10) is immersed in waveguiding structure in liquor kalii iodide first corrodes 20 seconds, is then rinsed with clear water
Totally, remove the Au layers in furling plating；Corroded 8 seconds with hydrofluoric acid solution again, then rinsed well, removed in furling plating with clear water
Ti layers；It is finally impregnated 5 minutes in sol solution is removed, is then rinsed well with clear water, remove sacrificial layer, ultimately form sky
Gas medium layer.
Silicon carbide-based lamella is bombarded by RF particle sources by etching angle in the step 7), RF grains
Component uses SF6, O2And the mixed gas of Ar, etching angle are 85 °~90 °, RF upper electrode powers are 1000 watts~1500
Watt, RF lower electrode powers are 100 watts~200 watts, and the SF6 gas flow rates are 14sccm~60sccm.
The photoresist uses EPI622, is toasted 10 minutes in 100 DEG C of baking oven after smearing；Glue is removed to use
LOR5A is toasted 20 minutes in 160 DEG C of baking ovens after smearing.
The noble gas uses nitrogen.
Compared with prior art, THz wave impedance of the present invention, which easily tunes air coplanar waveguide structure, has as follows beneficial
Effect：For based on a kind of Novel Delivery cable architecture of third semiconductor THz devices and circuit design, air bridges system is utilized
Make technology, realize the coplanar waveguide structure using air dielectric layer as main medium layer.In terms of the transmission of terahertz signal,
There is lower insertion loss and dispersion compared to the conventional co-planar waveguide present invention, can realize a kind of coplanar wave of high quality factor
Guide structure.Switch-mode metal layer is inserted between air dielectric layer and silicon carbide-based lamella simultaneously, reduces the thickness of air dielectric layer
Degree, reduces difficulty of processing, solves since air dielectric layer crosses thickness and support intercolumniation farther out, caused by it is in kind variable
The problems such as shape brisement, structural instability.In addition, the present invention offers groove Slot on switch-mode metal layer, by adjusting metal
The groove Slot sizes of switching layer, it is easier to obtain required impedance value, greatly reduce the difficulty of impedance adjusting.
Compared with prior art, the preparation method that THz wave impedance of the present invention easily tunes air coplanar waveguide structure has
Following advantageous effect：Furling plating metal is removed using etch, more neat electroplated metal layer can be obtained, avoid gold
Belong to the negative effect that edge furling plating metal residual generates the THz wave characteristic of coplanar waveguide structure.It is sacrificial in the present invention
Domestic animal layer employs stripping glue and photoresist, has the function of duplicate protection to non-peel-away region in this way, improves device finished product
Rate.
Description of the drawings
The part-structure schematic diagram of Fig. 1 waveguiding structures of the present invention；
The front view of switch-mode metal layer is made on Fig. 2 (a-1) silicon carbide-based lamella；
The vertical view of switch-mode metal layer is made on Fig. 2 (a-2) silicon carbide-based lamella；
Fig. 2 (b-1) makes positive ground metal layer support column sacrificial layer and signal wire metal layer by lithography after smearing photoresist
The front view of support column sacrificial layer；
Fig. 2 (b-2) makes positive ground metal layer support column sacrificial layer and signal wire metal layer by lithography after smearing photoresist
The vertical view of support column sacrificial layer；
Fig. 2 (c-1) deposits the front view of furling plating；
Fig. 2 (c-2) deposits the vertical view of furling plating；
Fig. 2 (d-1) makes positive ground metal layer mask layer and signal wire gold by lithography after photoresist is smeared on furling plating
Belong to the front view of layer mask layer；
Fig. 2 (d-2) makes positive ground metal layer mask layer and signal wire gold by lithography after photoresist is smeared on furling plating
Belong to the vertical view of layer mask layer；
Fig. 2 (e-1) plating thickeies the front view of metal layer；
Fig. 2 (e-2) plating thickeies the vertical view of metal layer；
Fig. 2 (e-3) plating thickeies the side view of metal layer；
Fig. 2 (f-1) smears photoresist at the thinned silicon carbide-based lamella back side and makes back metal vias masks layer by lithography
Front view；
Fig. 2 (f-2) smears photoresist at the thinned silicon carbide-based lamella back side and makes back metal vias masks layer by lithography
Vertical view；
The front view of Fig. 2 (g) etched backside metal throuth hole patterns；
Fig. 2 (h) deposits the front view of back metal through-hole and back-side ground metal layer；
Front view after Fig. 2 (i) removal mask lithography glue；
Fig. 2 (j-1) removes the front view after furling plating and sacrificial layer photoresist；
Fig. 2 (j-2) removes the vertical view after furling plating and sacrificial layer photoresist；
Fig. 2 (j-3) removes the side view after furling plating and sacrificial layer photoresist；
The S parameter simulation result figure of Fig. 3 waveguiding structures of the present invention；
The attenuation parameter simulation result figure of Fig. 4 waveguiding structures of the present invention；
The simulation result figure that the characteristic impedance of Fig. 5 waveguiding structures of the present invention changes with slot.
In attached drawing：1：Signal wire metal layer, 2：Positive ground metal layer, 3：Air dielectric layer, 4：Switch-mode metal layer, 5：Carbon
SiClx substrate layer, 6：Back-side ground metal layer, 7：Signal wire metal support column, 8：Positive ground metal layer support column, 9：The back side
Metal throuth hole, 400：Sacrificial layer, 401：Switching layer removal region, 402：Switching layer retains region, 500a：Silicon carbide-based lamella
Front, 501：Furling plating, 600：Mask layer, 601：Furling plating removal area, 602：Furling plating reservation region, 700：Mask layer,
701：Substrate back removal region, 702：Substrate back reservation region, 900：Through hole area.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
Referring to Fig. 1, THz wave impedance of the present invention easily tunes air coplanar waveguide structure and includes silicon carbide-based lamella 5, carbon
SiClx substrate layer 5 is made of high resistance type carbofrax material, and high resistance type carbofrax material is more than 10 for resistivity5Ohmcm
Carbofrax material.Silicon carbide-based 5 front deposition of lamella offers the switch-mode metal layer 4 of groove Slot, groove Slot width energy
It is enough to be adjusted in very large range according to the width of signal wire metal layer 1 and the thickness of air dielectric layer 3, it is different size of to obtain
Impedance.Signal wire metal layer 1, groove are provided with by signal wire metal support column 7 on silicon carbide-based lamella 5 at groove Slot
Positive ground metal layer 2 is provided with by positive ground metal layer support column 8 respectively on the switch-mode metal layer 4 of Slot both sides；Letter
Between number line metal layer 1 and positive ground metal layer 2, between signal wire metal support column 7 and positive ground metal layer support column 8
And air dielectric layer 3 is formed between the bottom of signal wire metal support column 7 and switch-mode metal layer 4；It is carried on the back in silicon carbide-based lamella 5
Face deposition has back-side ground metal layer 6, and multiple back metal through-holes 9 are offered on silicon carbide-based lamella 5, by switch gold
Belong to layer 4 to connect with back-side ground metal layer 6.
On the basis of prior art, only Regulate signal line metal layer width and air dielectric layer thickness is generally not easy
To required impedance, it is therefore desirable to which Regulate signal line metal layer width and air dielectric layer thickness obtain a value relatively
Afterwards, then by adjusting groove Slot width required impedance is obtained.
THz wave impedance of the present invention easily tunes the preparation method of air coplanar waveguide structure, includes the following steps：
Step 1 as shown in Fig. 2 (a-1) and Fig. 2 (a-2), selects high resistance type carbofrax material as silicon carbide-based lamella
5, make switch-mode metal layer 4 in silicon carbide-based lamella front 500a.One layer 1.5 microns are smeared in silicon carbide-based lamella front 500a
Thick photoresist EPI622, is toasted 10 minutes in 100 DEG C of baking ovens；Switch is made by lithography with the reticle for making switch-mode metal layer 4
4 area of the pattern of metal layer, and impregnate 2 minutes in developer solution, it is dried up with nitrogen；Plating makes switch-mode metal layer 4, that is, utilizes steaming
Hair or sputtering barrier layer Seed Layer TiW/Au, make the photoresist mask of electroplating gold, and electroplating gold thickeies, then remove photoresist with
And plating seed layer/barrier layer, eventually form 1.5 microns thick of switch-mode metal layer 4.
Step 2 as shown in Fig. 2 (b-1) and Fig. 2 (b-2), makes sacrificial layer 400 on switch-mode metal layer 4.
One layer 2 microns thick of stripping glue LOR5A is applied above the switch-mode metal layer 4,20 points are toasted in 160 DEG C of baking ovens
Clock；One layer 2 microns thick of photoresist EPI622 is applied on stripping glue LOR5A later, is toasted 10 minutes in 100 DEG C of baking ovens,
The ratio for removing glue LOR5A and photoresist EPI622 is 2:2；Then with the positive ground metal layer support column of making and signal wire gold
Belong to the reticle of layer support column, after overlay alignment, make positive ground metal layer support column and signal wire metal layer branch by lithography
Dagger area of the pattern.It finally impregnates 2 minutes, is dried up with nitrogen in developer solution, form 4 microns thick of sacrificial layer 400.It is described sacrificial
The pattern of domestic animal layer 400 is divided into switching layer removal region 401 and switching layer retains region 402, as shown in Fig. 2 (b-2), wherein switching
Layer removal region 401 is the area of the pattern of positive ground metal layer support column and signal wire metal layer support column.
Step 3 as shown in Fig. 2 (c-1) and Fig. 2 (c-2), deposits furling plating 501.
The furling plating 501 of one layer of 100 nanometer thickness, wherein furling plating are deposited in the sacrificial layer 400 and switch-mode metal layer 4
501 can be used two methods of evaporation and sputtering.Furling plating 501 by one layer of 20 nanometer thickness Ti and one layer of 80 nanometer thickness Au groups
Adhesion strength after improving annealing into, Ti thin layers between electrode tip metal and electroplating gold, Au thin layers are used for reducing conductive layer
Resistance.
Step 4 as shown in Fig. 2 (d-1) and Fig. 2 (d-2), makes the figure of positive ground metal layer and signal wire metal layer
Case mask layer 600.
The photoresist EPI622 of 1.5 microns of a thickness is applied on furling plating 501, is toasted 10 minutes in 100 DEG C of baking ovens；So
Afterwards positive ground metal layer and signal wire metal are made by lithography with the reticle for making positive ground metal layer and signal wire metal layer
The area of the pattern of layer.It finally impregnates 2 minutes, is dried up with nitrogen in developer solution, form 1.5 microns thick of mask layer 600.Such as figure
Shown in 2 (d-2), furling plating removal region 601 and furling plating retain region 602, and wherein furling plating removal area 601 connects for front
The area of the pattern of ground metal layer 2 and signal wire metal layer 1.
Step 5 as shown in Fig. 2 (e-1), Fig. 2 (e-2) and Fig. 2 (e-3), makes positive ground metal layer support column 8, letter
Number line metal layer support column 7, positive ground metal layer 2 and signal wire metal layer 1.
Plating thickeies area of the pattern 401 and the front of positive ground metal layer support column and signal wire metal layer support column
Ground metal layer and signal wire metal layer pattern region 601.It is right in the electroplate liquid of cyanide-free using conventional plating process
Layer of Au is not electroplated by the furling plating 501 that mask layer 600 stops, forms positive ground metal layer support column 8, signal wire metal layer
Support column 7, positive ground metal layer 2 and signal wire metal layer 1.
Step 6 as shown in Fig. 2 (f-1) and Fig. 2 (f-2), makes back metal through-hole pattern mask layer 700.
Fixed station is upside down in by air coplanar waveguide structure is easily tuned for the silicon carbide-based impedance of THz wave, to carbon
The back side of SiClx substrate layer is thinned, until thickness is 50 microns to 100 microns；Smear one layer 4 microns of photoresist
EPI622 is toasted 10 minutes in 100 DEG C of baking ovens；Then with the reticle for making positive ground metal layer and signal wire metal layer
Make back metal through-hole pattern region by lithography.It finally impregnates 2 minutes, is dried up with nitrogen in developer solution, form mask layer 700.
The mask layer 700 divides removes region 701 and substrate back reservation region 702 for substrate back, as shown in Fig. 2 (f-2),
Middle substrate back removal region 701 is back metal through-hole pattern region.
Step 7 as shown in Fig. 2 (g), makes an exhausting hole area 900.
The production method of through-hole interconnection carries out dry etching, i.e. silicon carbide for inductively coupled plasma etching (ICP) technology
Substrate layer is bombarded in ICP etching systems, with RF particle sources with certain etching angle.Particle source is SF6, O2With Ar gaseous mixtures
Body, the etching angle are 85 ° to 90 °, and the RF upper electrode powers are 1000 watts to 1500 watts, electrode work(under the RF
Rate is 100 watts to 200 watts, the SF6Flow velocity is 14sccm (standard state ml/min) to 60sccm.
Referring to Fig. 2 (h), back metal through-hole 9 and back-side ground metal are made at silicon carbide-based 5 back side of lamella for step 8
Layer 6.
Using routine techniques, mask layer 700 is removed, and furling plating is formed at silicon carbide-based 5 back side of lamella, then plating adds
Thickness forms back metal through-hole 9 and back-side ground metal layer 6.
Step 9, as shown in Fig. 2 (i), removal mask lithography glue 600.
Silicon carbide-based impedance for THz wave described in after plating is easily tuned air coplanar waveguide structure directly to use
Litho machine carries out pan-exposure, impregnates 2 minutes in developer solution later, and dried up with nitrogen.
Step 10 as shown in Fig. 2 (j-1), Fig. 2 (j-2) and Fig. 2 (j-3), corrodes furling plating 501, removes sacrificial layer 400.
Silicon carbide-based impedance is easily tuned air coplanar waveguide structure and is immersed in liquor kalii iodide and is corroded 20 seconds, Ran Houyong
Clear water is rinsed well, removes the Au thin layers in furling plating 501；Corroded 8 seconds with hydrofluoric acid solution again, then rinsed with clear water dry
Only, remove the Ti thin layers in furling plating 501；It impregnates 5 minutes in finally removing sol solution in area, is then rinsed well with clear water,
Remove sacrificial layer 400, ultimately form air dielectric layer 3.
In the present invention, furling plating metal is removed using etch, more neat electroplated metal layer can be obtained, avoided
Furling plating metal residual to the silicon carbide-based impedance for THz wave easily tunes air co-planar waveguide at metal edge
The THz wave characteristic of structure has a negative impact.Sacrificial layer 400 in the present invention, which employs, removes glue and photoresist, two kinds
The colloid of property has the function of duplicate protection to non-peel-away region, improves device yield.
Fig. 3 is that THz wave impedance of the present invention easily tunes the S that air coplanar waveguide structure is obtained by emulating solution tool
(1,1) and S (2,1) curve graph.From figure as can be seen that in the frequency range of 140GHz to 220GHz, the minimum of S (2,1)
It is worth for -0.5dB, the maximum value of S (1,1) is -25dB.It is coplanar that the silicon carbide-based impedance for THz wave easily tunes air
Waveguiding structure being capable of effectively transmitted signal.
When Fig. 4 is switch-mode metal layer window Slot difference sizes, the present invention is easy for the silicon carbide-based impedance of THz wave
It tunes the attenuation constant comparison of air coplanar waveguide structure and is compared with the attenuation constant of conventional co-planar waveguide.
Fig. 5 shows that in 140GHz to 220GHz frequency ranges the present invention is easy for the silicon carbide-based impedance of THz wave
The performance of tuning air coplanar waveguide structure is substantially better than conventional co-planar waveguide.
Fig. 5 is that THz wave impedance of the present invention easily tunes air coplanar waveguide structure in 200GHz, and characteristic impedance is with opening
Close the window Slot change in size of metal layer 4.The present invention is used in too by changing the window Slot sizes of switch-mode metal layer 4
The impedance that the silicon carbide-based impedance of Hertz wave easily tunes air coplanar waveguide structure can become in the range of 30 ohm to 65 ohm
Change, reduce the impedance design difficulty of air dielectric mutual encouragement waveguiding structure.
Claims (8)
1. a kind of THz wave impedance easily tunes air coplanar waveguide structure, it is characterised in that：Including silicon carbide-based lamella (5),
Described silicon carbide-based lamella (5) front deposition offers the switch-mode metal layer (4) of groove Slot, the silicon carbide at groove Slot
Pass through signal wire metal support column (7) setting signal line metal layer (1), the switch-mode metal of groove Slot both sides on substrate layer (5)
Positive ground metal layer (2) is provided with by positive ground metal layer support column (8) respectively on layer (4)；
Groove Slot width on the switch-mode metal layer (4) can be according to the width and air of signal wire metal layer (1)
The thickness of dielectric layer (3) is adjusted, to obtain different size of impedance；
Between the signal wire metal layer (1) and positive ground metal layer (2), signal wire metal support column (7) connects with front
Air is formed between ground metal layer support column (8) and between the bottom of signal wire metal support column (7) and switch-mode metal layer (4)
Dielectric layer (3)；Described silicon carbide-based lamella (5) backside deposition has back-side ground metal layer (6), and silicon carbide-based lamella
(5) multiple back metal through-holes (9) are offered on, switch-mode metal layer (4) is connected with back-side ground metal layer (6).
2. THz wave impedance according to claim 1 easily tunes air coplanar waveguide structure, it is characterised in that：Described
Silicon carbide-based lamella (5) is made of high resistance type carbofrax material；The high resistance type carbofrax material is more than 10 for resistivity5
The carbofrax material of ohmcm.
3. a kind of THz wave impedance as described in claim 1 easily tunes the preparation method of air coplanar waveguide structure, feature
It is, includes the following steps：
1) switch-mode metal layer (4) is made on silicon carbide-based lamella (5)；
One layer of photoresist is applied at the upper surface of silicon carbide-based lamella (5) (500a) first, is toasted in an oven；Make switch gold by lithography
Belong to the area of the pattern of layer (4), impregnate, dried up with noble gas in developer solution；Finally switch-mode metal layer (4) is produced in plating；
2) sacrificial layer (400) is made on switch-mode metal layer (4) obtained；
One layer of stripping glue is smeared above switch-mode metal layer (4) first, is toasted in an oven；Then one layer is smeared on stripping glue
Photoresist, then toast in an oven；Later by reticle overlay alignment, signal wire metal support column (7) and just is made by lithography
The area of the pattern of face ground metal layer support column (8)；It finally impregnates, is dried up with noble gas in developer solution, form sacrificial layer
(400)；The area of the pattern of the sacrificial layer (400) includes switching layer removal region (401) and switching layer retains region (402),
Switching layer removal region (401) is signal wire metal support column (7) and the area of the pattern of positive ground metal layer support column (8)；
3) furling plating (501) is deposited on sacrificial layer (400) and switch-mode metal layer (4)；
4) mask layer (600) of positive ground metal layer (2) and signal wire metal layer (1) pattern is made；
One layer of photoresist is smeared first on furling plating (501), is toasted in an oven；Then signal wire gold is made by lithography with reticle
Belong to layer (1) and the area of the pattern of positive ground metal layer (2)；It finally impregnates, is dried up with noble gas in developer solution, form mask layer
(600), the mask layer (600) retains region (602) including furling plating removal region (601) and furling plating, wherein furling plating
Remove the area of the pattern that area (601) are positive ground metal layer (2) and signal wire metal layer (1)；
5) to the furling plating (501) not stopped by mask layer (600), positive ground metal layer is produced by metal plating and is supported
Column (8), signal wire metal layer support column (7), positive ground metal layer (2) and signal wire metal layer (1)；
6) mask layer (700) of back metal through-hole (9) pattern is made；
The back side of silicon carbide-based lamella (5) is thinned first, and smears one layer of photoresist, is toasted in an oven；Then it uses
Reticle makes the area of the pattern of back metal through-hole (9) by lithography；It finally impregnates, is dried up with noble gas in developer solution, form mask
Layer (700)；The mask layer (700) retains region (702) including substrate back removal region (701) and substrate back,
Middle substrate back removal region (701) is the area of the pattern of back metal through-hole (9)；
7) pass through inductively coupled plasma etching through hole area (900) at silicon carbide-based lamella (5) back side；
8) mask layer (700) is washed away, metal plating makes back metal through-hole (9) and back-side ground metal layer (6)；
9) mask lithography glue (600) is removed；
10) corrosion furling plating (501), then wash away sacrificial layer (400), formed overhead coplanar waveguide structure to get to for
The silicon carbide-based impedance of THz wave easily tunes air coplanar waveguide structure.
4. preparation method according to claim 3, which is characterized in that described furling plating (501) thickness is 100 nanometers,
The Ti layers and 80 nanometers of use for being used for adhesion strength between electrode tip metal and electroplating gold after raising annealing including 20 nanometers
In the Au layers for reducing resistance conductive layer.
5. preparation method according to claim 4, which is characterized in that the step 10) first submerges waveguiding structure
Corrode 20 seconds in liquor kalii iodide, then rinsed well with clear water, remove the Au layers in furling plating (501)；Hydrofluoric acid is used again
Solution corrosion 8 seconds, is then rinsed well with clear water, removes the Ti layers in furling plating (501)；Finally impregnated in sol solution is removed
It 5 minutes, is then rinsed well with clear water, removes sacrificial layer (400), ultimately form air dielectric layer (3).
6. preparation method according to claim 3, which is characterized in that by silicon carbide-based lamella (5) in the step 7)
It is bombarded by RF particle sources by etching angle, the RF particle sources use SF6, O2And the mixed gas of Ar, etch angle
It is 85 °~90 ° to spend, and RF upper electrode powers are 1000 watts~1500 watts, and RF lower electrode powers are 100 watts~200 watts,
The SF6 gas flow rates are 14sccm~60sccm.
7. preparation method according to claim 3, which is characterized in that the photoresist uses EPI622, after smearing
It is toasted 10 minutes in 100 DEG C of baking oven；It removes glue and uses LOR5A, toasted 20 minutes in 160 DEG C of baking ovens after smearing.
8. preparation method according to claim 3, which is characterized in that the noble gas uses nitrogen.
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