CN103276363A - Multi-sheet double-side film rapid deposition device - Google Patents
Multi-sheet double-side film rapid deposition device Download PDFInfo
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- CN103276363A CN103276363A CN2013102338003A CN201310233800A CN103276363A CN 103276363 A CN103276363 A CN 103276363A CN 2013102338003 A CN2013102338003 A CN 2013102338003A CN 201310233800 A CN201310233800 A CN 201310233800A CN 103276363 A CN103276363 A CN 103276363A
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- heating piece
- substrate
- chip bench
- target
- deposition device
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- 230000008021 deposition Effects 0.000 title claims abstract description 23
- 230000005540 biological transmission Effects 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims description 35
- 239000012528 membrane Substances 0.000 claims description 11
- 230000003044 adaptive effect Effects 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 52
- 238000000151 deposition Methods 0.000 abstract description 19
- 238000002360 preparation method Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 34
- 238000004544 sputter deposition Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 101100194817 Caenorhabditis elegans rig-6 gene Proteins 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
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Abstract
A multi-sheet double-sided film rapid deposition device relates to a film deposition technology. The device for rapidly depositing the multiple double-sided films comprises a substrate table, a transmission mechanism and a target box, wherein the substrate table is connected with the transmission mechanism. The invention can realize the simultaneous and rapid growth of the films on the two sides of the substrate, ensure the uniformity of the films on the two sides of the substrate and the consistency of the two sides, and improve the preparation efficiency by more than 10 times.
Description
Technical field
The present invention relates to film deposition techniques.
Background technology
The YBa of sputtering method preparation
2Cu
3O
7-δ(YBCO) superconducting layer has excellent microwave properties, and under liquid nitrogen temperature, 10GHz, its microwave surface resistance (Rs) is than low two orders of magnitude of Cu, with the microwave device of its making extensively in the every field.
Traditional sputtering method prepares film several technical issues, and 1. sedimentation velocity is slow, and 2. Zhi Bei uniformity of film is restricted, 3. yields poorly.Though adopt the planar target sputter can improve sputter rate greatly, owing to composition and the electric property of the harm meeting serious film of negative oxygen ion reverse sputtering problem in the ybco film preparation are abandoned.The mode of the design of rewinding target and substrate rotation can solve negative ion reverse sputtering problem, thereby but sedimentation rate influences preparation efficiency because target-substrate distance can not obtain faster more greatly.
United States Patent (USP) (US6632282) discloses a kind of disc type multi-disc material deposition substrate chucking appliance system, can realize the uniform deposition of 62 inches films simultaneously.But this system can only realize the deposition preparation of single-sided film, and this system takes the ring-type position-limit mechanism, and substrate is caused excessive blocking, and has only the even distribution that realizes film in 1.6 inches scopes, is difficult to satisfy the application requiring of 2 inches ybco films.
Summary of the invention
Technical problem to be solved by this invention is, a kind of multi-disc two-side film membrane fast deposition device is provided, and realizes the quick preparation of multi-disc two-side film membrane simultaneously, and the film sample of preparation has good inner evenness and two sides consistence.
The technical scheme that the present invention solve the technical problem employing is, multi-disc two-side film membrane fast deposition device, comprise chip bench, transmission rig, target box, chip bench is connected with transmission rig, it is characterized in that, described chip bench is provided with at least two through holes, the two ends of through hole are provided with the point type position-limit mechanism, chip bench is arranged in the heating chamber between first heating piece and second heating piece, first heating piece and second heating piece are provided with the opening as sedimentary province, and the lead to the hole site on aperture position and the chip bench is adaptive.
Further, the opening of the opening of first heating piece and second heating piece is all adaptive with the position of same through hole.
Described target box is provided with the groove of cuboid, is provided with ceramic target along the inwall of groove, and the target box also is provided with and comprises water cooling plant.
Ceramic target by conductive resin firm be bonded at rectangular parallelepiped groove inwall.
Described chip bench, first heating piece and second heating piece are in three parallel planes.
Described point type position-limit mechanism is mutually the spacing point that 120 degree angles are distributed in bore periphery by three and constitutes.
The point type position-limit mechanism refers to that position-limit mechanism is arranged on around the through hole with discrete point-like, and the bikini that is preferably mutual angle 120 degree distributes, and spacing point can be made of gag lever post or banking stop.
The invention has the beneficial effects as follows that target box particular structure can effectively suppress the reverse sputtering of negative oxygen ion, can possess the fast advantage of planar target sputter rate again, target-substrate distance can be reduced in addition, reaches the purpose that improves film deposition rate; The design of target box can make thickness compensation catch with mathematical tool MATLAB emulation easily, thereby makes the film of high uniformity.Simultaneously, also can improve the homogeneity of film thickness by the mode of pinwheel and substrate center dislocation.
Chip bench design and the rotation of uniqueness of the present invention are regulated, and can realize the homogeneity preparation of 6 slices/batch films;
The present invention can be implemented in the simultaneously quick growing film in two sides of substrate, and guarantees the homogeneity of substrate two sides film and the consistence on two sides, and preparation efficiency improves more than 10 times.
Point type position-limit mechanism of the present invention is minimum to blocking of substrate, can realize the even distribution of film in 2 inches scopes.
Description of drawings
Fig. 1 is a specific embodiment of the present invention---the synoptic diagram of 6 hole chip bench.Among the figure, 1 is chip bench, and 2 is the perforate of chip bench, and the aperture is 51.2mm, and 3 is substrate to be coated, and diameter is 50.8mm, and 4 is position-limit mechanism.
Fig. 2 is the schematic perspective view of 6 hole chip bench.
Fig. 3 is the transmission mechanism synoptic diagram.5 is rotary electric machine among the figure, the 6th, and transmission rod, the 7th, right box type target, the 8th, left box type target.
Fig. 4 is target box structural representation.Its inner rectangular parallelepiped groove inner face all is YBCO ceramic target (shown in the dash area).The 12nd, cooling water tank.
Fig. 5 is spiral heater synoptic diagram (loam cake is transparent mode, so that expression interior substrate platform).Chip bench is positioned over heating chamber inside, and 13 is the heating chamber shell among the figure, the radiation of shielding heat.
Fig. 6 is the synoptic diagram that removes the spiral heater behind the chip bench.Be provided with the spiral heating silk in second heating piece 16 of first heating piece 15 and setting in parallel.The opening on well heater right side is the thin film deposition district.When substrate revolved round the sun this zone, the twilight sunset deposition of being launched by both sides target sputter went up two-sided formation film.
Fig. 7 is along with the rotation time substrate position is carried out rotation, with the relative position rotation synoptic diagram of chip bench.
Fig. 8 is 2 inches film thickness distribution schematic diagrams.Ybco film is about 850nm, and thickness rises and falls less than the zone of 3%, 1.8 inch outer both sides owing to being blocked by the trilateral catch in the 1.8 inches scopes in central zone, centered by the thickness about 85% of regional thickness.
Fig. 9 is the substrate Jc performance uniformity contrast of the good substrate of rotation and not rotation.The good substrate of rotation can be obtained very high inner evenness as can be seen.
Figure 10 is prepared film sample two sides, two sides Jc performance profile, and the two sides consistence is very good as we can see from the figure.
Embodiment
Multi-disc two-side film membrane fast deposition device, comprise chip bench 1, transmission rig 6, target box 7, chip bench 1 is connected with transmission rig 6, described chip bench 1 is provided with at least two through holes 2, the two ends of through hole 2 are provided with point type position-limit mechanism 4, chip bench 1 is arranged in the heating chamber between first heating piece 15 and second heating piece 16, and first heating piece 15 and second heating piece 16 are provided with the opening as sedimentary province, and through hole 2 positions on aperture position and the chip bench 1 are adaptive.
The opening of the opening of first heating piece 15 and second heating piece 16 is all adaptive with the position of same through hole.Shown in Fig. 5,6,7.Described target box comprises water cooling plant.
Described chip bench 1, first heating piece 15 and second heating piece 16 are in three parallel planes.
Described point type position-limit mechanism is mutually the spacing point that 120 degree angles are distributed in bore periphery by three and constitutes.Position-limit mechanism is the catch that prevents that substrate from dropping, and each catch is a spacing point.Three spacing points are evenly distributed on the periphery of through hole, are mutually 120 degree angles.Catch is designed to trilateral, removes to block substrate with leg-of-mutton one jiao, and what this design can be firm is limited in substrate in the perforate, to greatest extent substrate is leaked in the deposition region cruelly again, makes that utilization ratio has reached ultimate attainment in the face of substrate.
Further, multi-disc two-side film membrane fast deposition device, comprise two box type targets, 6 hole chip bench, spiral heater and rotary electric machine, two target boxes are staggered relatively, chip bench is positioned in the middle of two spiral heaters, and be arranged at two target box centers, and vertical with the target box line of centres, drive chip bench by rotary electric machine and do at the uniform velocity rotation.
Embodiment the present invention includes two target boxes, 6 hole chip bench, spiral heater and rotary electric machine referring to Fig. 1-8 more specifically.Wherein 1 is chip bench, and its material can be stainless steel or quartz.3 is the substrate of plated film, and substrate can be chosen as monocrystal chip LaAlO
3, MgO, SrTiO
3, Al
2O
3Deng, two inches circles of diameter (if substrate is size less than two inches non-circular substrate, can places it in a diameter and be in two inches the clamping plate).The 2nd, the perforate on the chip bench, opening diameter is 51.2mm, and is more bigger than 2 inches substrate diameter.The 4th, prevent the catch that substrate drops, each side of perforate has three, and 120 degree are angular distribution at interval for three catch, and catch thickness is 2mm.Catch is designed to trilateral, removes to block substrate with leg-of-mutton one jiao, and the scope of blocking is 2-3mm, and is bent upwards about 30 degree angles, in order to avoid scratch the film of substrate and deposition in substrate rotation process.Fig. 3 is the transmission mechanism synoptic diagram.The 5th, rotary electric machine, rotating speed can be regulated; The 6th, transmission rod, transmission rod have two sections of branch front and back, and there is one deck thermal baffle two sections centres, and the material of thermal baffle is sheet mica.7,8 is respectively right target and left target, and two targets are a face of corresponding deposition substrate respectively, and the target-substrate distance of two targets can be regulated.Two targets all adopt box type target, structural representation such as Fig. 4.The main body of target box is cooling water tank 12, and material is copper.Cooling water tank inside has the groove of rectangular parallelepiped, and rectangular parallelepiped groove inner face all is YBCO rectangular parallelepiped ceramic target (comprising totally five faces such as 9-11), and target is of a size of 60 * 28 * 5mm.Target by conductive resin firm be bonded at the groove inwall.Target composition Y:Ba:Cu:O ratio 1:2:3:7.
Chip bench is installed in the well heater, sees Fig. 5, and wherein 13 is heater cases.Well heater is made up of the two sides, and Fig. 6 is the well heater internal structure.Two faces of well heater are provided with the heating wire of coiled coil.Well heater one side has a rectangular aperture, and as the thin film deposition district, left target and right target are installed in the both sides of sedimentary province respectively.
The chip bench deep bid is vertically placed, and during big disc spins, circular substrate can be done rotation at specific direction.
Embodiment 1:
The present invention is installed in the vacuum apparatus.Single crystal La AlO with alcohol and 22 inches (00l) orientations of acetone ultrasonic cleaning
3(LAO) substrate is each 10 minutes, then the LAO substrate of cleaning is put into any two holes of 6 hole chip bench, and a slice is to realize the rotation of substrate in the hole in the chip bench rotation process, can not rotate in the hole and another sheet is fixing.Then deposit cavity is vacuumized, and use the well heater in this contrive equipment that the LAO substrate is carried out heated baking.Treat vacuum tightness and LAO underlayer temperature reach respectively＜when 1Pa and 800 ° of C, open rotary electric machine, the chip bench rotating speed be controlled to be 85 the circle/minute, aerating oxygen and argon gas, control air pressure total value is wherein argon gas 20Pa of 30Pa(, oxygen 10Pa), open shielding power supply, the sputtering current of regulating on two box type targets is 0.5A, and the sputtering sedimentation time is 10 hours, and film thickness is about 500nm.After deposition is finished substrate is cooled to 500 ° of C and also simultaneously in deposit cavity, charges into an atmospheric O
2, be incubated after 30 minutes, close the substrate heating, make it cool to room temperature with the furnace, take out film sample at last and characterize.Figure 10 is the substrate Jc performance uniformity contrast of the good substrate of rotation and not rotation.The good substrate of rotation can be obtained very high inner evenness among the left figure as can be seen, and the Jc of the substrate of not rotation of right figure distributes then very inhomogeneous.
Embodiment 2:
The present invention is installed in the vacuum apparatus.The MgO substrate of cleaning is put into the hole that to realize substrate rotation therein arbitrarily of 6 hole chip bench.Then deposit cavity is vacuumized, and use the well heater in this contrive equipment that the MgO substrate is carried out heated baking.Treat vacuum tightness and MgO underlayer temperature reach respectively＜when 1Pa and 780 ° of C, open rotary electric machine, the chip bench rotating speed be controlled to be 85 the circle/minute, aerating oxygen and argon gas, control air pressure total value is wherein argon gas 20Pa of 30Pa(, oxygen 10Pa), open shielding power supply, the sputtering current of regulating on two box type targets is 0.5A, and the sputtering sedimentation time is 4 hours, and film thickness is about 200nm.After deposition is finished substrate is cooled to 500 ° of C and also simultaneously in deposit cavity, charges into an atmospheric O
2, be incubated after 30 minutes, close the substrate heating, make it cool to room temperature with the furnace, take out film sample at last and characterize.Figure 11 is prepared film sample two sides, substrate two sides Jc performance profile, and Jc distributes and mainly concentrates on 2.5-3.1MA/cm
2, inner evenness and two sides consistence are all very good as we can see from the figure.
Claims (5)
1. multi-disc two-side film membrane fast deposition device, comprise that chip bench [1], transmission rig [6], chip bench [1] and transmission rig [6] are connected, it is characterized in that, also comprise two target boxes [7], described chip bench [1] is provided with at least two through holes [2], the two ends of through hole [2] are provided with point type position-limit mechanism [4], chip bench [1] is arranged in the heating chamber between first heating piece [15] and second heating piece [16], first heating piece [15] and second heating piece [16] are provided with the opening as sedimentary province, and through hole [2] position on aperture position and the chip bench [1] is adaptive.
2. multi-disc two-side film membrane fast deposition device as claimed in claim 1 is characterized in that, the opening of the opening of first heating piece [15] and second heating piece [16] is all adaptive with the position of same through hole, and two target boxes are relatively arranged on the opening part of heating piece.
3. multi-disc two-side film membrane fast deposition device as claimed in claim 1 is characterized in that described target box is provided with the groove of cuboid, and the inwall of groove is provided with ceramic target, and the target box also is provided with and comprises water cooling plant.
4. multi-disc two-side film membrane fast deposition device as claimed in claim 1 is characterized in that, described chip bench [1], first heating piece [15] and second heating piece [16] are in three parallel planes.
5. multi-disc two-side film membrane fast deposition device as claimed in claim 1 is characterized in that, described point type position-limit mechanism is mutually the spacing point that 120 degree angles are distributed in bore periphery by three and constitutes.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310233800.3A CN103276363B (en) | 2013-06-13 | 2013-06-13 | Multi-disc two-side film membrane fast deposition device |
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|---|---|---|---|
| CN201310233800.3A CN103276363B (en) | 2013-06-13 | 2013-06-13 | Multi-disc two-side film membrane fast deposition device |
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| Publication Number | Publication Date |
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| CN103276363A true CN103276363A (en) | 2013-09-04 |
| CN103276363B CN103276363B (en) | 2016-05-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108531880A (en) * | 2018-06-05 | 2018-09-14 | 汪玉洁 | A kind of polysilicon film low-temperature physical vapor deposition device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1446942A (en) * | 2003-03-14 | 2003-10-08 | 中国科学院上海光学精密机械研究所 | Double-disk connection substrate device and using method |
| CN101135043A (en) * | 2006-08-28 | 2008-03-05 | 北京有色金属研究总院 | Batch preparation of double-faced high-temperature superconducting film device |
| CN201162040Y (en) * | 2008-03-24 | 2008-12-10 | 北儒精密股份有限公司 | Target material apparatus capable of uniformly coating film |
| CN101770972A (en) * | 2008-12-29 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | Process plate |
-
2013
- 2013-06-13 CN CN201310233800.3A patent/CN103276363B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1446942A (en) * | 2003-03-14 | 2003-10-08 | 中国科学院上海光学精密机械研究所 | Double-disk connection substrate device and using method |
| CN101135043A (en) * | 2006-08-28 | 2008-03-05 | 北京有色金属研究总院 | Batch preparation of double-faced high-temperature superconducting film device |
| CN201162040Y (en) * | 2008-03-24 | 2008-12-10 | 北儒精密股份有限公司 | Target material apparatus capable of uniformly coating film |
| CN101770972A (en) * | 2008-12-29 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | Process plate |
Non-Patent Citations (1)
| Title |
|---|
| 陈光华: "《新型电子薄膜材料》", 30 April 2012, article "介质薄膜材料", pages: 259 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108531880A (en) * | 2018-06-05 | 2018-09-14 | 汪玉洁 | A kind of polysilicon film low-temperature physical vapor deposition device |
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