CN102544366B - Resistance switch based on cobalt ferrite nano-film and preparation method therefor - Google Patents
Resistance switch based on cobalt ferrite nano-film and preparation method therefor Download PDFInfo
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- CN102544366B CN102544366B CN2012100480048A CN201210048004A CN102544366B CN 102544366 B CN102544366 B CN 102544366B CN 2012100480048 A CN2012100480048 A CN 2012100480048A CN 201210048004 A CN201210048004 A CN 201210048004A CN 102544366 B CN102544366 B CN 102544366B
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Abstract
The invention relates to a resistance switch based on a cobalt ferrite nano-film and a preparation method therefor. A CoFe2O2 film is prepared by a method for sputtering a metal Fe target and a Co target through the reaction, the CoFe2O2 film is grown on a Si substrate plated with metal Pt, and silver conductive adhesive is coated on the upper surface of the CoFe2O2 film, so that a Ag/CoFe2O4/Pt sandwich structure is formed; and the resistance switch effect of the Ag/CoFe2O4/Pt sandwich structure is measured. The resistance switch based on the CoFe2O2 nano-film has high stability and can stably circulate for 200 times. The high-quality CoFe2O2 film is prepared by a reaction sputtering method successfully. Compared with other film preparation technologies, the target materials are simple. Compared with the radio frequency sputtering ceramic target method, the cobalt ferrite film is prepared by using metal Fe and Co targets as the target materials, so industrialized production is realized easily.
Description
Technical field
Patent of the present invention relates to based on the resistance switch of Conjugate ferrite nano thin-film and preparation method, more specifically, is a kind of resistance switch and preparation method who relates to based on the Conjugate ferrite nano thin-film of reaction cosputtering preparation.
Background technology
The resistance switch effect can be applicable to resistance switch and stores at random (RRAM), and this class device consists of metal/insulator/metal sandwich structure., due to the metal ion of the variable valency that exists in insulator, room etc., make in insulator and local metal-insulator transition occurs under the effect of electric field or Joule heat etc., thereby cause the height resistance variations of sandwich structure, be i.e. resistance switch.Finding suitable insulation body material becomes people's research emphasis.Conjugate ferrite (CoFe
2O
4) have a good insulating properties, and have complicated cube inverse spinel structure, wherein, lattice structure is made closs packing with oxygen atom, in the face-centered cubic lattice that 32 oxygen atoms form, 64 tetrahedral interstices (A position) and 32 octahedral interstices (B position) are arranged.Wherein, 64 tetrahedron A positions are occupied by 8 Fe, and 32 octahedral B positions are occupied by 8 Fe and 8 Co.CoFe
2O
4Contain Co, the Fe ion of variable valence state and easily form the characteristics such as oxygen room, become us and study the selection of resistance switch.
CoFe
2O
4Depress and have a cube inverse spinel structure at the room temperature standard atmosphere, lattice constant is
In the unit cell of spinel structure, each unit cell has eight molecules, totally 56 ions.The crystal structure of this complexity makes ferritic preparation very difficult.
Magnetically controlled sputter method is a kind of economical and practical and method for manufacturing thin film capable of being industrialized.When utilizing the Grown by Magnetron Sputtering ferrite film, what each research group used is all the ceramic target of stoicheiometry, utilize radio frequency sputtering ferrite from target " transplanting " to substrate on film forming, used is the ceramic target of standard chemical proportioning.Utilize ceramic target radio frequency sputtering complex process, need preparation or buy ceramic target.
Summary of the invention
Utilize simple metal targets, reaction cosputtering method prepares CoFe
2O
4Nano thin-film, and utilize metal/insulator (CoFe2O4)/metal sandwich structure to prepare resistance switch.The present invention, namely from above purpose, has developed a kind of preparation method of the resistance switch based on the Conjugate ferrite nano thin-film.
Technical scheme based on CoFe2O4 nano thin-film and resistance switch in the present invention is as follows:
A kind of resistance switch based on the Conjugate ferrite nano thin-film, utilize the method for reactive sputtering metal Fe target and Co target to prepare CoFe
2O
4Film; And CoFe
2O
4Film growth is in the Si substrate that is coated with Pt metal, at CoFe
2O
4The film upper surface is coated with silver conductive adhesive, forms Ag/CoFe
2O
4/ Pt sandwich structure; Measure Ag/CoFe
2O
4/ Pt sandwich structure resistance switch effect.
The preparation method of the resistance switch based on the Conjugate ferrite nano thin-film of the present invention, concrete steps are as follows:
(1) adopt three target magnetic control sputtering devices, metal purity be installed respectively be 99.99% Fe target and purity and be 99.99% Co target on two direct current sputtering target heads, sputter equipment three targets all upward RC sample position tilt, with about 60 degree of the angle of horizontal plane;
(2) the Si sheet is fixed on specimen holder, and puts into sputtering chamber specimen holder position;
(3) unlatching sputtering equipment, successively start the one-level mechanical pump and the secondary molecular pump vacuumizes, and by the baking means, accelerate vacuum pumping rate, until the back end vacuum degree of sputtering chamber is better than 1 * 10-5Pa;
(4) open substrate heating temperature control power supply, substrate is heated to 650 ℃ of Display panel temperature, stablized 30 minutes;
(5) open simultaneously flowmeter and shielding power supply and carry out preheating after 20 minutes, passing into purity to vacuum chamber is 99.999% sputter gas Ar and O
2, wherein Ar is 100sccm, oxygen is 1.8-8.0sccm,, by regulating the opening degree of ultra-high vacuum flash board valve, the air pressure of sputtering chamber is controlled at 2.0Pa, and stablized 5 minutes;
(6) open shielding power supply, apply the electric current of 0.2A and the direct voltage of 360V on the Fe target, apply the direct voltage of 0.1A and 360V on the Co target, pre-sputtering 20 minutes, wait sputtering current and voltage stabilization;
(7) control substrate at the uniform velocity rotation under the rotating speed of 2 rev/mins, and open simultaneously the substrate baffle plate, film growth 20 minutes, obtain the thick film of 200nm;
(8) sputter finishes, closing baffle plate, shielding power supply and breather valve successively, and open slide valve chamber is continued to vacuumize, base reservoir temperature is down to room temperature with the speed of 1 degrees/min at 650 ℃ after stablizing 1 hour, then close pumped vacuum systems, being filled with purity to vacuum chamber is 99.999% nitrogen, opens vacuum chamber, takes out CoFe
2O
4
(9) at CoFe
2O
4Upper surface is coated with silver conductive adhesive, forms Ag/CoFe
2O
4/ Pt sandwich structure.
Measure Ag/CoFe
2O
4The voltage-current characteristic of/Pt sandwich structure, study its resistance switch effect.
Glue copper wire as wire at Pt and silver surface respectively, measure the current-voltage characteristic curve of sample with current source and voltmeter, namely measure the resistance switch effect of sample, the change procedure of electric current is 0 → 100 milliampere → 0 →-100 milliampere → 0.
Effect of the present invention is as follows:
1. find first CoFe
2O
4The resistance switch of nano thin-film, have good stability (resistance switch can stable circulation 200 times);
2. at present the main method that adopts of suitability for industrialized production thin-film material is sputtering method, and we have successfully prepared high-quality CoFe with reacting the cosputtering method first
2O
4Film, compare other film preparing technology, and magnetron sputtering is more easily realized suitability for industrialized production;
3. target is selected simply with radio frequency sputtering ceramic target method, to compare, and we adopt metal Fe and Co target to prepare the Conjugate ferrite film as target, from industrial, more easily obtains.
Description of drawings
Fig. 1 cosputtering equipment hit the head, sample position schematic diagram.
Fig. 2 is based on CoFe
2O
4The Ag/CoFe that nano thin-film forms
2O
4/ Pt sandwich structure schematic diagram.
The CoFe of Fig. 3 growth
2O
4XRD figure, as we can see from the figure, the CoFe of growth
2O
4Film is polycrystal film.
Fig. 4 CoFe
2O
4The current-voltage characteristic curve of film, as we can see from the figure, under identical voltage (as 1 volt), corresponding different electric current, shown different resistance values, and high low-resistance ratio is about 10, CoFe when oxygen flow is 3.0sccm
2O
4Nano thin-film shows good resistance switch effect.
Embodiment
According to the I-E characteristic analysis that we carry out sample prepared in the present invention, below will be based on CoFe
2O
4The preparation method's of the resistance switch of nano thin-film preferred forms is described in detail:
1. prepare CoFe on the Si sheet of plating Pt
2O
4Film.
(1) adopt three target magnetic control sputtering devices, metal Fe (99.99%) and Co (99.99%) target are installed respectively on two direct current sputtering target heads, as shown in Figure 1, all RC sample position tilts sputter equipment three targets towards top, with about 60 degree of the angle of horizontal plane;
The Si sheet that (2) will plate Pt is fixed on specimen holder, and puts into sputtering chamber specimen holder position, as sample position in Fig. 1
(3) unlatching sputtering equipment, successively start the one-level mechanical pump and the secondary molecular pump vacuumizes, and by means such as bakings, accelerate vacuum pumping rate, until the back end vacuum degree of sputtering chamber is better than 1 * 10-5Pa;
(4) open substrate heating temperature control power supply, substrate is heated to 650 ℃ of Display panel temperature, stablized 30 minutes;
(5) open simultaneously flowmeter and shielding power supply and carry out preheating after 20 minutes, passing into purity to vacuum chamber is 99.999% sputter gas Ar and O
2, wherein Ar is 100sccm, O
2Gas is 3.0sccm,, by regulating the opening degree of ultra-high vacuum flash board valve, the air pressure of sputtering chamber is controlled at 2.0Pa, and stablizes about 5 minutes.
(6) open shielding power supply, apply the electric current of 0.2A and the direct voltage of 360V left and right on the Fe target, apply the direct voltage of 0.1A and 360V left and right on the Co target, pre-sputtering 20 minutes, wait sputtering current and voltage stabilization;
(7) control substrate at the uniform velocity rotation under the rotating speed of 2 rev/mins, and open simultaneously the substrate baffle plate, film growth 20 minutes, obtain the thick film of 200nm;
(8) sputter finishes, closing baffle plate, shielding power supply and breather valve successively, and open slide valve chamber is continued to vacuumize, base reservoir temperature is down to room temperature with the speed of 1 degrees/min at 650 ℃ after stablizing 1 hour, then close pumped vacuum systems, being filled with purity to vacuum chamber is 99.999% nitrogen, opens vacuum chamber, take out sample, can obtain being grown in the CoFe of the polycrystalline on the Si sheet that plates Pt
2O
4Film, as shown in Figure 2, judge the prepared CoFe of polycrystalline that is by X-ray diffraction
2O
4Film.
2. prepare Ag/CoFe
2O
4/ Pt sandwich structure.
At CoFe
2O
4Upper surface is coated with silver conductive adhesive, forms Ag/CoFe
2O
4/ Pt sandwich structure, as shown in Fig. 3 schematic diagram.
3. measure Ag/CoFe
2O
4The voltage-current characteristic of/Pt sandwich structure, study its resistance switch effect.Glue copper wire as wire at Pt and silver surface respectively, measure the current-voltage characteristic curve of sample with current source and voltmeter, namely measure the resistance switch effect of sample, the change procedure of electric current is 0 → 100 milliampere → 0 →-100 milliampere → 0, as shown in Figure 4, under identical voltage (as 1 volt), corresponding different electric current, shown different resistance values, and high low-resistance ratio is about 10 when oxygen flow is 3.0sccm, show high low resistance state, i.e. CoFe
2O
4Nano thin-film shows good resistance switch effect.
Claims (1)
1. preparation method based on the resistance switch of Conjugate ferrite nano thin-film is characterized in that concrete steps are as follows:
(1) adopt three target magnetic control sputtering devices, metal purity be installed respectively be 99.99% Fe target and purity and be 99.99% Co target on two direct current sputtering target heads, sputter equipment three targets all upward RC sample position tilt, with about 60 degree of the angle of horizontal plane;
(2) the Si sheet is fixed on specimen holder, and puts into sputtering chamber specimen holder position;
(3) unlatching sputtering equipment, successively start the one-level mechanical pump and the secondary molecular pump vacuumizes, and by the baking means, accelerate vacuum pumping rate, until the back end vacuum degree of sputtering chamber is better than 1 * 10
– 5Pa;
(4) open substrate heating temperature control power supply, substrate is heated to 650 ℃ of Display panel temperature, stablized 30 minutes;
(5) open simultaneously flowmeter and shielding power supply and carry out preheating after 20 minutes, passing into purity to vacuum chamber is 99.999% sputter gas Ar and O
2, wherein Ar is 100sccm, oxygen is 1.8 – 8.0sccm,, by regulating the opening degree of ultra-high vacuum flash board valve, the air pressure of sputtering chamber is controlled at 2.0Pa, and stablized 5 minutes;
(6) open shielding power supply, apply the electric current of 0.2A and the direct voltage of 360V on the Fe target, apply the direct voltage of 0.1A and 360V on the Co target, pre-sputtering 20 minutes, wait sputtering current and voltage stabilization;
(7) control substrate at the uniform velocity rotation under the rotating speed of 2 rev/mins, and open simultaneously the substrate baffle plate, film growth 20 minutes, obtain the thick film of 200nm;
(8) sputter finishes, closing baffle plate, shielding power supply and breather valve successively, and open slide valve chamber is continued to vacuumize, base reservoir temperature is down to room temperature with the speed of 1 degrees/min at 650 ℃ after stablizing 1 hour, then close pumped vacuum systems, being filled with purity to vacuum chamber is 99.999% nitrogen, opens vacuum chamber, takes out CoFe
2O
4
(9) at CoFe
2O
4Upper surface is coated with silver conductive adhesive, forms Ag/CoFe
2O
4/ Pt sandwich structure.
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| CN105679931B (en) * | 2016-01-28 | 2018-01-02 | 青岛大学 | A kind of hetero-junctions and preparation method thereof |
| CN108149195A (en) * | 2017-12-25 | 2018-06-12 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of preparation method of super abrasive high transmittance zirconia film |
| CN109355625B (en) * | 2018-12-04 | 2020-12-04 | 吉林师范大学 | CoFe2O4Method for preparing magnetic film |
| CN112349834B (en) * | 2020-10-16 | 2023-02-03 | 华东师范大学 | Sandwich-structure giant magneto-impedance effect composite material and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1738051A (en) * | 2005-07-06 | 2006-02-22 | 中国科学院上海硅酸盐研究所 | Non-volatility memorizer, changing method and preparation method based on resistance variations |
| CN1920088A (en) * | 2006-09-14 | 2007-02-28 | 电子科技大学 | Preparation method of metal oxide nano array-inverse thin film |
| CN101335326A (en) * | 2008-07-24 | 2008-12-31 | 中国科学院上海硅酸盐研究所 | Electrically inducted resistor material for resistor type memory and preparing method thereof |
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| JPS6242584A (en) * | 1985-08-20 | 1987-02-24 | Matsushita Electric Ind Co Ltd | Nonlinear resistance element and manufacture of same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1738051A (en) * | 2005-07-06 | 2006-02-22 | 中国科学院上海硅酸盐研究所 | Non-volatility memorizer, changing method and preparation method based on resistance variations |
| CN1920088A (en) * | 2006-09-14 | 2007-02-28 | 电子科技大学 | Preparation method of metal oxide nano array-inverse thin film |
| CN101335326A (en) * | 2008-07-24 | 2008-12-31 | 中国科学院上海硅酸盐研究所 | Electrically inducted resistor material for resistor type memory and preparing method thereof |
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|---|
| JP昭62-42584A 1987.02.24 |
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