CN103268906A - Cadmium sulfide thin film and method for preparing solar cell with cadmium sulfide thin film - Google Patents
Cadmium sulfide thin film and method for preparing solar cell with cadmium sulfide thin film Download PDFInfo
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- CN103268906A CN103268906A CN201310194072XA CN201310194072A CN103268906A CN 103268906 A CN103268906 A CN 103268906A CN 201310194072X A CN201310194072X A CN 201310194072XA CN 201310194072 A CN201310194072 A CN 201310194072A CN 103268906 A CN103268906 A CN 103268906A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a method for preparing a cadmium sulfide thin film. The method comprises the steps that the cadmium sulfide thin film is provided; a cadmium chloride thin film is formed on the cadmium sulfide thin film; heat treatment is conducted in the atmosphere of cadmium chloride. According to the method for preparing the cadmium sulfide thin film, oxidation of the cadmium sulfide thin film is effectively reduced, so that the obtained cadmium sulfide thin film is crystallized transversally on a substrate and crystalline grains are arranged tightly. When the cadmium sulfide thin film is used in the cadmium telluride solar cell, high forbidden bandwidth of the thin film is kept, possibility of a short circuit of the solar cell is reduced, and a short-circuit current of the solar cell, collection efficiency of carriers and the quality of a P-N junction are further improved. Therefore, the conversion efficiency of the solar cell is improved.
Description
Technical field
The present invention relates to field of semiconductor materials, particularly cadmium sulphide membrane and have the preparation method of the solar cell of cadmium sulphide membrane.
Background technology
Cadmium sulfide CdS belongs to II-IV compounds of group, it is direct gap semiconductor, monocrystalline forbidden band band gap width is 2.45eV, belong to wide band gap semiconducter, the ABSORPTION EDGE wavelength is about 512nm, allows most of visible light transmissive, so the Window layer of Chang Zuowei solar cell, be applied in the thin-film solar cells, as cadmium telluride and copper-indium-galliun-selenium film solar cell.How preparing high-quality CdS film is its crucial Science and Technology problem that obtains extensive use.In the application of cadmium telluride solar cell, be Window layer with the good cadmium sulfide of light transmission (CdS) usually, make itself and CdTe form the hetero-junction thin-film battery, preparing high-quality CdS film is the key that obtains the high conversion efficiency battery.
Cadmium telluride (CdTe) is a kind of II-VI compound semiconductor, is subjected to extensive concern as a kind of thin-film solar cells material with application prospect.This is because the two big characteristics of CdTe: at first, its energy gap is 1.45eV, response to solar spectrum is in optimal solar spectrum wave band, the unijunction thin-film solar cells that with CdTe is absorbed layer just can obtain high conversion rate, its theoretical transformation efficient is up to 30%, and the high conversion efficiency in its laboratory reaches 16.5% at present; Secondly, the absorption coefficient of CdTe at visible-range up to 10
5Cm
-1, the photon that 99% energy is higher than the CdTe energy gap in the sunlight can be absorbed in the absorbed layer of 2 micron thickness, and CdTe is as the solar cell of absorbed layer, and the absorbed layer desired thickness is about several microns in theory, and material consumption is few, and the battery cost is low.
Usually, because the thickness of Window layer CdS film is generally in the 100-300 nanometer, the CdS crystal property of preparation is relatively poor, and the film crystallite dimension is little, and particle diameter generally has only tens nanometers, even has amorphous CdS cluster.Especially behind subsequent growth CdTe absorbed layer, poor with the lattice coupling of CdTe high crystalline film, device interfaces pattern and photoelectric properties are relatively poor.Because the CdS crystal property is poor, defect concentration is bigger in the film, thereby causes the electric leakage of battery P-N interface to increase, and influences short circuit current, open circuit voltage and the fill factor, curve factor of CdTe thin-film solar cells.Aspect thermodynamic property, because prefabricated CdS membrane crystallization is bad, crystal grain is less, the surface can be higher, in the hot environment of near space growth CdTe film easily and CdTe react, cause between CdS and the CdTe layer excess diffusion taking place, influence the heterojunction quality.Therefore improve CdS thin film crystallization performance, it is most important for improving CdTe thin-film solar cells performance to improve Film Optics and electric property simultaneously.
Summary of the invention
The present invention is intended to solve at least one of above-mentioned technological deficiency, and the method that forms high-quality CdS film is provided.
In order to realize above purpose, the invention provides following technical scheme:
The preparation method of cadmium sulphide membrane in a kind of cadmium telluride solar cell comprises step:
Cadmium sulphide membrane is provided;
At cadmium sulphide membrane preparation caddy film; And
In caddy atmosphere, heat-treat; Remove residual caddy film.
Alternatively, adopt the method for czochralski method or physical vapour deposition (PVD) to form the caddy film at cadmium sulphide membrane.
Alternatively, step of heat treatment is specially in caddy atmosphere: feed caddy gas, to heat-treat in caddy atmosphere.
Alternatively, step of heat treatment is specially in caddy atmosphere: the heating caddy generates caddy atmosphere, and heat-treats therein.
Alternatively, form the caddy film at cadmium sulphide membrane, and step of heat treatment is specially in caddy atmosphere:
On cadmium sulphide membrane, carry out the caddy evaporation by physical evaporation method, form the caddy film;
Original position evaporation caddy is also heat-treated.
Alternatively, the thickness range of described caddy film is 10-300nm.
Alternatively, described heat treated temperature range is 350-450 ℃, and described heat treatment period scope is 30 seconds-60 minutes, and described heat treated carrier gas is the mist of inert gas and oxygen, and air pressure range is 2-101kPa, and oxygen partial pressure is less than 50%.
Alternatively, described heat treated temperature range is 390-430 ℃, and described heat treatment period scope is 10-30 minute, and described heat treated carrier gas is the mist of inert gas and oxygen, and air pressure range is 2-50kPa, and oxygen partial pressure is less than 50%.
Alternatively, utilize deionized water to wash, so that caddy film residual on the cadmium sulphide membrane is removed.
In addition, the present invention also provides the method for utilizing the method for preparing solar cell, comprising: prepare cadmium sulphide membrane according to above-mentioned arbitrary preparation method; On described cadmium sulphide membrane, form cadmium telluride absorbed layer, resilient coating and back-contact electrode successively.
The preparation method of the cadmium sulphide membrane that the embodiment of the invention provides, after cadmium sulphide membrane forms the caddy film, in the atmosphere of caddy, carried out heat treatment, through after this Technology for Heating Processing, reduced the oxidation of cadmium sulphide membrane effectively, the cadmium sulphide membrane that obtains transverse crystallizing on substrate surface, and crystal grain is closely arranged.In the time of in being applied to the cadmium telluride solar cell, make film keep higher energy gap, reduce possibility and the further short circuit current that improves battery of battery short circuit, improve the collection efficiency of charge carrier and the quality of battery P-N knot simultaneously, thereby improved the conversion efficiency of solar cell.
Description of drawings
Above-mentioned and/or the additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 shows the structural representation of existing cadmium telluride solar cell;
Fig. 2 shows the flow chart according to the preparation method of cadmium sulphide membrane in the cadmium telluride solar cell of the embodiment of the invention;
Fig. 3 is preparation method's the schematic diagram of the cadmium sulphide membrane of the embodiment of the invention;
Fig. 4 is the heat treatment schematic diagram of the cadmium sulphide membrane of one embodiment of the invention;
Fig. 5 is the heat treatment schematic diagram of the cadmium sulphide membrane of further embodiment of this invention;
Fig. 6 a is the preceding photo under scanning electron microscopy of heat treatment of the cadmium sulphide membrane of one embodiment of the invention;
Fig. 6 b is the photo under scanning electron microscopy after the cadmium sulphide membrane heat treatment among Fig. 6 a;
Fig. 7 is the current-voltage curve comparison diagram of cadmium telluride solar cell under standard test condition with cadmium sulphide membrane of the present invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical or similar label is represented identical or similar elements or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
With reference to shown in Figure 1, the structure of common cadmium telluride solar cell mainly comprises glass 2, oxidic, transparent, conductive layers (TCO) 3, Window layer 4, absorbed layer 5 and resilient coating 6 and back-contact electrode 7 successively, Window layer is CdS film n type semiconductor, absorbed layer is CdTe film p-type semiconductor, sunlight 1 is injected by quadrature on glass, through TCO, enter the CdS/CdTe p-n junction again.Wherein, the crystal property of CdS film is most important to solar cell properties.
In order to improve the crystal property of CdS film, the present invention proposes a kind of preparation method of cadmium sulphide membrane, as shown in Figure 2, comprise step: S01 provides cadmium sulphide membrane; S02 is at cadmium sulphide membrane preparation caddy film; And S03, in caddy atmosphere, heat-treat.Improve the crystal property of caddy film by heat treatment step.
In order to understand the present invention better, below with reference to accompanying drawing different embodiments of the invention are elaborated.
Embodiment one
In this embodiment, with reference to figure 3 and shown in Figure 4, at step S01, provide cadmium sulphide membrane 130.
This cadmium sulphide membrane 130 can be performed thin film, and on substrate 110 and tco layer 120, this substrate 110 is light-transmissive substrates, as glass substrate in advance for it.Normally, this cadmium sulphide membrane 130 had carried out pre-wash step, as utilized deionized water to wash, and used high-purity N
2It is dried up.
Then, at step S02, form caddy (CdCl at cadmium sulphide membrane 130
2) film 140.
In the present embodiment, can adopt methods such as czochralski method or physical vapour deposition (PVD) to form caddy film 140.Czochralski method is cadmium sulphide membrane to be immersed contain in the solution of caddy, then cadmium sulphide membrane is lifted out solution, in one embodiment, cadmium sulphide membrane can be immersed in CdCl
2In the saturated methanol solution, and sample vertically lifted out solution, because the evaporation rate of methyl alcohol is very fast, lifts when finishing and formed one deck CdCl at cadmium sulphide membrane
2Film.CdCl
2The depositing of thin film method can be used physical vaporous deposition, as thermal evaporation, near space sublimed method, gas-phase transport and deposition, magnetron sputtering etc.CdCl
2Film thickness is about 10-200nm.
Then, at step S03, in caddy atmosphere 150, heat-treat.
In the present embodiment, with reference to figure 4, at first above-mentioned device is placed on the heater 102 of annealing device 101, then close the cavity of annealing device 101, and vacuumize, be evacuated to air pressure and be lower than 5 * 10
-3During Pa, begin to heat-treat.During heat treatment, feed CdCl
2Gas and carrier gas, carrier gas can be oxygen and inert gas mist, and air pressure can be 2-101kPa, and to 450 ℃ of 350 –, partial pressure of oxygen is 0-50% with device heats, and the flow of gas determines heat treatment 30 seconds-60 minutes by cavity volume and device size.Stop to feed carrier gas and CdCl
2Gas stops sample being heated.Naturally open cavity after the cooling and take out device.In the preferred embodiment, when heat treatment, adopt following process conditions: air pressure 2-50kPa, temperature is 430 ℃ of 390 –, the time is 10-30 minute.
At last, at step S04, remove the caddy film of cadmium sulfide remained on surface.
Can use the deionized water rinsing cadmium sulphide membrane, the caddy film of its remained on surface is removed, nitrogen dries up, and obtains high-quality cadmium sulphide membrane.
In the time of in being applied to solar cell, the subsequent step of cadmium telluride solar cell preparation be can proceed, cadmium telluride absorbed layer, resilient coating and back-contact electrode or other necessary steps on cadmium sulfide, formed successively.
So far, finished the cadmium telluride solar battery structure of the embodiment of the invention one.
Embodiment two
In this embodiment, referring to figs. 2 and 5 shown in, at step S01, provide cadmium sulphide membrane 130.
This cadmium sulphide membrane 130 can be performed thin film, and on substrate 110 and tco layer 120, this substrate 110 is light-transmissive substrates, as glass substrate in advance for it.Normally, this cadmium sulphide membrane 130 had carried out pre-wash step, as utilized deionized water to wash, and used high-purity N
2It is dried up.
Then, at step S02, prepare caddy (CdCl at cadmium sulphide membrane 130
2) film 140.
In the present embodiment, can adopt methods such as czochralski method or physical vapour deposition (PVD) to prepare caddy film 140.Czochralski method is cadmium sulphide membrane to be immersed contain in the solution of caddy, then cadmium sulphide membrane is lifted out solution, in one embodiment, cadmium sulphide membrane can be immersed in CdCl
2In the saturated methanol solution, and sample vertically lifted out solution, because the evaporation rate of methyl alcohol is very fast, lifts when finishing and formed one deck CdCl at cadmium sulphide membrane
2Film.CdCl
2The depositing of thin film method can be used physical vaporous deposition, as thermal evaporation, near space sublimed method, gas-phase transport and deposition, magnetron sputtering etc.CdCl
2Film thickness is about 10-200nm.
Then, at step S03, in caddy atmosphere 150, heat-treat.
In this embodiment, produce caddy atmosphere by evaporation evaporation caddy powder.With reference to shown in Figure 5, can in vacuum vaporation system 201, heat-treat, above-mentioned device is placed on the heater 202, in evaporator crucible 203, add pure CdCl
2Powder 204.Then close the cavity of vacuum vaporation system, and vacuumize, be evacuated to air pressure and be lower than 5 * 10
-3During Pa, feed CdCl
2Gas and carrier gas, carrier gas can be the mist of oxygen and inert gas, air pressure is 2-101kPa, and device and crucible heated simultaneously, with device heats to 450 ℃ of 350 –, partial pressure of oxygen is 0-50%, and the flow of gas determines heat treatment 30 seconds-60 minutes by cavity volume and device size.Stop to feed gas, stop sample being heated.Naturally open cavity after the cooling and take out device.In the preferred embodiment, when heat treatment, adopt following process conditions: air pressure 2-50kPa, temperature is 430 ℃ of 390 –, the time is 10-30 minute.
At last, at step S04, remove the caddy film of cadmium sulfide remained on surface.
Can use the deionized water rinsing cadmium sulphide membrane, the caddy film of its remained on surface is removed, nitrogen dries up, and obtains high-quality cadmium sulphide membrane.
In the time of in being applied to solar cell, the subsequent step of cadmium telluride solar cell preparation be can proceed, cadmium telluride absorbed layer, resilient coating and back-contact electrode or other necessary steps on cadmium sulfide, formed successively.
So far, finished the cadmium telluride solar battery structure of the embodiment of the invention two.
Embodiment three
In this embodiment, with reference to shown in Figure 4, at step S01, provide cadmium sulphide membrane 130.
This cadmium sulphide membrane 130 is performed thin film, and on substrate 110 and tco layer 120, this substrate 110 is light-transmissive substrates, as glass substrate in advance for it.Normally, this cadmium sulphide membrane 130 had carried out pre-wash step, as utilized deionized water to wash, and used high-purity N
2It is dried up.
Then, at step S02 and step S03, form caddy (CdCl at cadmium sulphide membrane 130
2) film 140 and in caddy atmosphere 150, heat-treating.
In this embodiment, by physical evaporation method evaporation CdCl
2, form CdCl at cadmium sulfide
2Film, original position is heat-treated then.
Particularly, with reference to shown in Figure 5, now above-mentioned device is placed on the heater 202 of vacuum vaporation system 201, in evaporator crucible 203, adds pure CdCl
2Powder 204, CdCl
2The amount of powder is determined by vacuum cavity and sample size.Then, vacuum system is vacuumized, when air pressure is lower than 5 * 10
-3During Pa, evaporator crucible is heated evaporation CdCl wherein
2Deposit to sample surfaces, its thickness is about 10-200nm.CdCl
2After thin film deposition finished, original position was heat-treated, and namely still in this device, continued evaporation CdCl
2Powder is to produce CdCl
2Gas, the mist of feeding argon gas or other inert gases and oxygen, air pressure can be 2-101kPa, partial pressure of oxygen is 0-50%.Substrate and crucible are heated simultaneously, and underlayer temperature is 450 ℃ of 350 –, and heat treatment time is 30 seconds-60 minutes.Stop heating after heat treatment is finished, stop to feed gas, device is taken out in the cooling back naturally.In the preferred embodiment, when heat treatment, adopt following process conditions: air pressure 2-50kPa, temperature is 430 ℃ of 390 –, the time is 10-30 minute.
At last, at step S04, remove the caddy film of cadmium sulfide remained on surface.
Can use the deionized water rinsing cadmium sulphide membrane, the caddy film of its remained on surface is removed, nitrogen dries up, and obtains high-quality cadmium sulphide membrane.
In the time of in being applied to solar cell, the subsequent step of cadmium telluride solar cell be can proceed, cadmium telluride absorbed layer, resilient coating and back-contact electrode or other necessary steps on cadmium sulfide, formed successively.
So far, finished the cadmium telluride solar battery structure of the embodiment of the invention three.
In order to understand effect of the present invention better, describe below in conjunction with experimental data.To form cadmium sulphide membrane afterwards but the photo under the scanning electron microscopy (SEM) of not heat-treating, the photo under the scanning electron microscopy (SEM) after heat-treating with this film compares, and observes the variation of its pattern.As can be seen, before heat-treating, shown in Fig. 6 a, the crystal grain of CdS film is very little, and film is in indefinite form substantially, and its crystalline quality is general.After carrying out heat treatment of the present invention, shown in Fig. 6 b, it is big that the crystal grain of CdS thin film crystallization obviously becomes, crystal grain inside and blemish concentration reduce, the quantity of crystal grain specific area and crystal particle crystal boundary also reduces greatly, and before heat treatment, the quality of film improves greatly.
In addition, utilize process CdCl of the present invention
2Heat treated CdS is as Window layer, and preparation CdTe thin-film solar cells prepares CdTe film solar battery structure as shown in Figure 1.Electrode before the electrically conducting transparent and back electrode are drawn wiring with the silver slurry, measure its photovoltaic property under the solar simulator of AM1.5, the i-v curve of this CdTe thin-film solar cells that records as shown in Figure 7.In Fig. 7, transverse axis is voltage V(mV), the longitudinal axis is current density I(mA/cm
2), curve a is the I-V curve with solar cell of the CdS film that did not carry out preparation method's acquisition of the present invention, curve b is the I-V curve with solar cell of the CdS film that carried out preparation method's acquisition of the present invention, as can be seen, the CdS that obtains with the preparation method of the embodiment of the invention is as Window layer, the open circuit voltage V of the CdTe thin-film solar cells of preparation
OCBe 822mV, short circuit current J
SCBe 25.1mA/cm
2, fill factor, curve factor FF is 70.5%, and photoelectric conversion efficiency reaches 14.6%.And utilize CdS without Overheating Treatment as Window layer, the open circuit voltage V of the CdTe thin-film solar cells (b) of preparation
OCBe 748mV, short circuit current J
SCBe 19.0mA/cm
2, fill factor, curve factor FF is 62.4%, and photoelectric conversion efficiency is 8.8%, this shows, utilizes CdS that the present invention obtains as Window layer, and the CdTe thin-film solar cells of preparation has very high photoelectric conversion efficiency.
To sum up, compared with prior art, the embodiment of the invention and the CdS film with embodiment of the invention preparation have following advantage:
1, reduced the oxidation of CdS film effectively by the preparation method of the embodiment of the invention, optimized heat treatment method makes oxygen can only be present in film surface on a small quantity, make film keep higher energy gap, reduced because the CdS film light absorbs the loss of the photoelectric current that causes.
2, the CdS film that obtains of this Technology for Heating Processing tends to along CdS/ substrate interface transverse crystallizing, under the very thin situation of film, also can effectively prevent the generation of film pin hole, reduced the possibility of battery short circuit, make the CdS film can adopt thinner thickness simultaneously, further improve the short circuit current of battery.
3, the CdS film that obtains of the preparation method by the embodiment of the invention is closely rearranged by the big crystal grain of individual layer, has reduced the quantity of crystal grain specific area and crystal particle crystal boundary effectively, and good crystallinity has reduced the crystal defect of crystal grain inside simultaneously.When being applied to solar cell, these 2 can be reduced photo-generated carrier compound at CdS film and CdS/CdTe heterojunction place effectively, have improved the collection efficiency of photo-generated carrier, have improved the quality of battery P-N knot.
4, the CdS thin film crystallization that obtains of the preparation method by the embodiment of the invention is functional, stopped effectively because the CdS film that more dangling bonds cause and the situation of CdTe film excess diffusion, simultaneously surperficial an amount of oxygen also can effectively prevent the excessive counterdiffusion of the two.The CdS film that this technology obtains can make CdS film and the counterdiffusion of CdTe film be in more satisfactory level, the counterdiffusion of appropriateness can reduce the lattice mismatch of the two, reduce defect density, the charge carrier that effectively reduces the interface is compound, when being applied to solar cell, prepared P-N knot has very high quality.
The above only is preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. the preparation method of a cadmium sulphide membrane is characterized in that, comprises step:
Cadmium sulphide membrane is provided;
At cadmium sulphide membrane preparation caddy film; And
In caddy atmosphere, heat-treat;
Remove residual caddy film.
2. preparation method according to claim 1 is characterized in that, adopts the method for czochralski method or physical vapour deposition (PVD) to form the caddy film at cadmium sulphide membrane.
3. preparation method according to claim 2 is characterized in that, step of heat treatment is specially in caddy atmosphere: feed caddy gas, to heat-treat in caddy atmosphere.
4. preparation method according to claim 2 is characterized in that, step of heat treatment is specially in caddy atmosphere: the heating caddy generates caddy atmosphere and heat-treats therein.
5. preparation method according to claim 1 is characterized in that, form the caddy film at cadmium sulphide membrane, and step of heat treatment is specially in caddy atmosphere:
On cadmium sulphide membrane, carry out the caddy evaporation by physical evaporation method, form the caddy film;
Original position evaporation caddy is also heat-treated.
6. according to each described preparation method among the claim 1-5, it is characterized in that the thickness range of described caddy film is 10-200nm.
7. preparation method according to claim 6, it is characterized in that, described heat treated temperature range is 350-450 ℃, described heat treatment period scope is 30 seconds-60 minutes, described heat treated carrier gas is the mist of inert gas and oxygen, air pressure range is 2-101kPa, and oxygen partial pressure is less than 50%.
8. preparation method according to claim 6, it is characterized in that, described heat treated temperature range is 390-430 ℃, described heat treatment period scope is 10-30 minute, described heat treated carrier gas is the mist of inert gas and oxygen, air pressure range is 2-50kPa, and oxygen partial pressure is less than 50%.
9. preparation method according to claim 1 is characterized in that, utilizes deionized water to wash, so that caddy film residual on the cadmium sulphide membrane is removed.
10. the preparation method with solar cell of cadmium sulphide membrane is characterized in that comprising: prepare cadmium sulphide membrane according to each described preparation method among the claim 1-9;
On described cadmium sulphide membrane, form cadmium telluride absorbed layer, resilient coating and back-contact electrode successively.
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Cited By (2)
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| WO2019000477A1 (en) * | 2017-06-27 | 2019-01-03 | 海门市品格工业设计有限公司 | Method for preparing cds nanorods |
| CN114823966A (en) * | 2021-01-29 | 2022-07-29 | 中国科学院宁波材料技术与工程研究所 | Interface optimization method of cadmium sulfide semiconductor thin film and application thereof |
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| CN102779864A (en) * | 2012-07-19 | 2012-11-14 | 中山大学 | Cadmium telluride thin-film battery and manufacturing method thereof |
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| CN101820018A (en) * | 2009-02-27 | 2010-09-01 | 比亚迪股份有限公司 | Preparation method of CdS thin-film |
| CN101609860A (en) * | 2009-07-16 | 2009-12-23 | 上海联孚新能源科技有限公司 | CdTe thin-film solar cells preparation method |
| CN101640233A (en) * | 2009-08-21 | 2010-02-03 | 四川阿波罗太阳能科技有限责任公司 | Device for producing CdS/CdTe solar cell by magnetron sputtering method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019000477A1 (en) * | 2017-06-27 | 2019-01-03 | 海门市品格工业设计有限公司 | Method for preparing cds nanorods |
| CN114823966A (en) * | 2021-01-29 | 2022-07-29 | 中国科学院宁波材料技术与工程研究所 | Interface optimization method of cadmium sulfide semiconductor thin film and application thereof |
| CN114823966B (en) * | 2021-01-29 | 2024-04-09 | 中国科学院宁波材料技术与工程研究所 | Interface optimization method of cadmium sulfide semiconductor film and application thereof |
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