CN103265035B - Method for realizing convection agitation of silicon slag in medium smelting - Google Patents
Method for realizing convection agitation of silicon slag in medium smelting Download PDFInfo
- Publication number
- CN103265035B CN103265035B CN201310221968.2A CN201310221968A CN103265035B CN 103265035 B CN103265035 B CN 103265035B CN 201310221968 A CN201310221968 A CN 201310221968A CN 103265035 B CN103265035 B CN 103265035B
- Authority
- CN
- China
- Prior art keywords
- slag
- agent
- liquid
- silicon
- convection agitation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310221968.2A CN103265035B (en) | 2013-06-05 | 2013-06-05 | Method for realizing convection agitation of silicon slag in medium smelting |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310221968.2A CN103265035B (en) | 2013-06-05 | 2013-06-05 | Method for realizing convection agitation of silicon slag in medium smelting |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103265035A CN103265035A (en) | 2013-08-28 |
CN103265035B true CN103265035B (en) | 2015-05-20 |
Family
ID=49008715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310221968.2A Expired - Fee Related CN103265035B (en) | 2013-06-05 | 2013-06-05 | Method for realizing convection agitation of silicon slag in medium smelting |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103265035B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115468419A (en) * | 2022-08-11 | 2022-12-13 | 商南中剑实业有限责任公司 | Device and method for removing boron impurities in metallurgical-grade silicon in ore-smelting furnace |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101628718A (en) * | 2008-07-16 | 2010-01-20 | 佳科太阳能硅(厦门)有限公司 | Method for removing impurity of phosphorus from metallurgical grade silicon |
CN101555015B (en) * | 2009-05-19 | 2011-11-09 | 厦门大学 | Purifying method and device for removing boron from polysilicon |
CN102259865B (en) * | 2011-06-01 | 2013-04-10 | 宁夏银星多晶硅有限责任公司 | Slag washing process for removing boron from metallurgical polycrystalline silicon |
-
2013
- 2013-06-05 CN CN201310221968.2A patent/CN103265035B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN103265035A (en) | 2013-08-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103387416B (en) | Method for prolonging service life of graphite crucible in medium smelting | |
CN103342363B (en) | Slag former and the using method thereof of white residue separation is convenient to during polycrystalline silicon medium melting | |
CN103710543B (en) | Utilize the method for producing low carbon and high silicon manganese-silicon containing manganese industrial residue two step method | |
CN102659110B (en) | Method for directionally solidifying and purifying polycrystalline silicon by adopting ferro-silicon alloy | |
CN103382572A (en) | Crucible for enabling polycrystalline silicon ingot to be free of black edge and preparation method thereof | |
CN102874816B (en) | Method and device for preparing polysilicon by electromagnetically separating aluminum-silicon alloy solution | |
CN102145893B (en) | Method for purifying polysilicon by adopting electron beam to carry out fractionated smelting | |
CN103011170A (en) | Method for purifying polysilicon through silicon alloy slagging | |
CN103265035B (en) | Method for realizing convection agitation of silicon slag in medium smelting | |
CN103553050B (en) | Polysilicon serialization medium melting method | |
CN101935846B (en) | Method for preparing solar grade silicon from silica serving as raw material | |
CN103539125B (en) | Medium melting is connected the method for purifying polycrystalline silicon with preliminary directional freeze | |
CN101724902A (en) | Process for preparing solar-grade polysilicon by adopting high-temperature metallurgy method | |
CN203393255U (en) | Crucible for realizing no black edges of polycrystalline silicon cast ingot | |
CN103541002A (en) | Dual-power adaptive control technology applied to polycrystalline silicon ingot casting | |
CN101905886B (en) | Method for purifying polycrystalline silicon by electron beam gradient smelting | |
CN102241399A (en) | Method for preparing low-boron, low-phosphorus high-purity silicon by electrothermal metallurgy process | |
CN102139880B (en) | Method for removing impurity boron in polycrystalline silicon by electron beam slagging smelting | |
CN202744659U (en) | Energy-saving type thermal field structure of polycrystalline silicon ingot furnace | |
CN203568855U (en) | Device for purifying polycrystalline silicon via linkage of medium smelting and primary directional solidification | |
CN104276573B (en) | A kind of slag former of polycrystalline silicon medium melting and using method thereof | |
CN203998974U (en) | Be convenient to change the medium smelting furnace of plumbago crucible | |
CN203346093U (en) | Continuous slag adding and removal device during polycrystalline silicon medium smelting | |
CN103708465B (en) | A kind of medium melting technology utilizing mixed slag | |
CN103420377B (en) | Slag-forming agent for removing boron during medium melting of polycrystallization silicon and using method of slag-forming agent |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171103 Address after: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee after: Qingdao Changsheng Dongfang Industry Group Co., Ltd. Address before: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266234 Patentee before: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171124 Address after: Pudong Town Jimo city Shandong province 266234 city of Qingdao Ren Jia Tun Cun Ren Jia Tun Lu Patentee after: QINGDAO NEW ENERGY SOLUTIONS INC. (NESI) Address before: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee before: Qingdao Changsheng Dongfang Industry Group Co., Ltd. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150520 Termination date: 20190605 |
|
CF01 | Termination of patent right due to non-payment of annual fee |