CN102139880B - Method for removing impurity boron in polycrystalline silicon by electron beam slagging smelting - Google Patents
Method for removing impurity boron in polycrystalline silicon by electron beam slagging smelting Download PDFInfo
- Publication number
- CN102139880B CN102139880B CN2011101259039A CN201110125903A CN102139880B CN 102139880 B CN102139880 B CN 102139880B CN 2011101259039 A CN2011101259039 A CN 2011101259039A CN 201110125903 A CN201110125903 A CN 201110125903A CN 102139880 B CN102139880 B CN 102139880B
- Authority
- CN
- China
- Prior art keywords
- electron beam
- boron
- polycrystalline silicon
- line
- smelting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Landscapes
- Silicon Compounds (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011101259039A CN102139880B (en) | 2011-05-16 | 2011-05-16 | Method for removing impurity boron in polycrystalline silicon by electron beam slagging smelting |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011101259039A CN102139880B (en) | 2011-05-16 | 2011-05-16 | Method for removing impurity boron in polycrystalline silicon by electron beam slagging smelting |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102139880A CN102139880A (en) | 2011-08-03 |
CN102139880B true CN102139880B (en) | 2013-07-31 |
Family
ID=44407705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011101259039A Expired - Fee Related CN102139880B (en) | 2011-05-16 | 2011-05-16 | Method for removing impurity boron in polycrystalline silicon by electron beam slagging smelting |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102139880B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105063280A (en) * | 2015-08-24 | 2015-11-18 | 宁夏太阳镁业有限公司 | Slagging medium and preparation method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101724900A (en) * | 2009-11-24 | 2010-06-09 | 厦门大学 | Device and method for purifying polycrystalline silicon |
CN101941698A (en) * | 2010-08-17 | 2011-01-12 | 大连隆田科技有限公司 | Method and device for efficiently removing phosphorus impurities in silicon by electron beam melting |
-
2011
- 2011-05-16 CN CN2011101259039A patent/CN102139880B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101724900A (en) * | 2009-11-24 | 2010-06-09 | 厦门大学 | Device and method for purifying polycrystalline silicon |
CN101941698A (en) * | 2010-08-17 | 2011-01-12 | 大连隆田科技有限公司 | Method and device for efficiently removing phosphorus impurities in silicon by electron beam melting |
Also Published As
Publication number | Publication date |
---|---|
CN102139880A (en) | 2011-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102219219B (en) | Method and equipment for purifying polycrystalline silicon by directional solidification and filter slag melting | |
CN102173424B (en) | Method and equipment for removing phosphorus and metal impurities in ganister sand through vacuum induction melting | |
CN102229430B (en) | Technical method for preparing solar energy polycrystalline silicon by using metallurgical method | |
CN102145894B (en) | Method and device for smelting and purifying polysilicon by using electron beams and adopting slag filtering | |
CN102219221B (en) | Method for purifying polycrystalline silicon by directional solidification and slag refining | |
CN101122047A (en) | Method for manufacturing polycrystalline silicon used for solar battery | |
CN101787563B (en) | Method and device for removing impurities of phosphorus and boron by induction and electronic beam melting | |
WO2012100485A1 (en) | Method and apparatus for smelting and purifying polycrstalline silicon by means of electron beam and shallow melt pool | |
CN102145893B (en) | Method for purifying polysilicon by adopting electron beam to carry out fractionated smelting | |
Li et al. | Review of new technology for preparing crystalline Silicon solar cell materials by metallurgical method | |
CN102001661B (en) | Method for slagging, boron removal and purification of metalluragical silicon | |
CN102311121A (en) | Method for segregation and purification of industrial silicon by alloying | |
CN103342363B (en) | Slag former and the using method thereof of white residue separation is convenient to during polycrystalline silicon medium melting | |
CN103011170A (en) | Method for purifying polysilicon through silicon alloy slagging | |
CN102534666A (en) | Electrochemical double refining purification method for high purity silicon and high purity aluminum | |
CN102249243B (en) | Method for using metallurgic process to remove impurity boron from industrial silicon | |
CN101565186B (en) | Method for removing boron impurities in silicon | |
CN105329901B (en) | It is a kind of that the method that zinc compound removes boron impurity in industrial silicon is added into calcium silicates | |
CN101775650B (en) | Preparation method of solar polycrystalline silicon cast ingot and device thereof | |
CN103073001A (en) | Method for removing impurity boron of metallurgical silicon by high-basicity refining agent | |
CN202063730U (en) | Electron beam and slag filter smelting polycrystalline silicon purifying equipment | |
CN102408112A (en) | Method and equipment for purification of polysilicon by using electron beam melting under action of high purity silicon substrate | |
CN102139880B (en) | Method for removing impurity boron in polycrystalline silicon by electron beam slagging smelting | |
CN202226676U (en) | Device for purifying polycrystalline silicon by directional solidification and slag filter smelting | |
CN101724902A (en) | Process for preparing solar-grade polysilicon by adopting high-temperature metallurgy method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: QINGDAO LONGSHENG CRYSTAL SILICON TECHNOLOGY CO., Free format text: FORMER OWNER: DALIAN LONGTIAN TECH. CO., LTD. Effective date: 20120606 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 116025 DALIAN, LIAONING PROVINCE TO: 266000 QINGDAO, SHANDONG PROVINCE |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20120606 Address after: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266000 Applicant after: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. Address before: High tech Industrial District of Dalian City, Liaoning province 116025 Lixian Street No. 32 B block 508 Applicant before: Dalian Longtian Tech. Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160505 Address after: Dalian high tech Industrial Park in Liaoning province 116025 Lixian Street No. 32 Building B room 508-2 Patentee after: Dalian Longsheng Technology Co., Ltd. Address before: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266000 Patentee before: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130731 Termination date: 20170516 |