CN115468419A - Device and method for removing boron impurities in metallurgical-grade silicon in ore-smelting furnace - Google Patents
Device and method for removing boron impurities in metallurgical-grade silicon in ore-smelting furnace Download PDFInfo
- Publication number
- CN115468419A CN115468419A CN202210959737.0A CN202210959737A CN115468419A CN 115468419 A CN115468419 A CN 115468419A CN 202210959737 A CN202210959737 A CN 202210959737A CN 115468419 A CN115468419 A CN 115468419A
- Authority
- CN
- China
- Prior art keywords
- ring
- gear
- control
- silicon
- fixedly connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D11/00—Arrangement of elements for electric heating in or on furnaces
- F27D11/08—Heating by electric discharge, e.g. arc discharge
- F27D11/10—Disposition of electrodes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D2003/0034—Means for moving, conveying, transporting the charge in the furnace or in the charging facilities
- F27D2003/0083—Means for stirring the charge
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Description
技术领域technical field
本发明涉及冶金级硅提纯技术领域,尤其涉及一种在矿热炉中去除冶金级硅中硼杂质的装置及其方法。The invention relates to the technical field of metallurgical-grade silicon purification, in particular to a device and method for removing boron impurities in metallurgical-grade silicon in a submerged arc furnace.
背景技术Background technique
由于传统能源的使用存在不可再生、环境污染等诸多弊端,晶体硅太阳能电池以其绿色环保的优点逐渐吸引了全球目光,中国每年大约新增1800万千瓦光伏发电设备,为了满足光伏设备迅猛发展的需要,科研人员在低成本短流程生产太阳能级硅的领域付出了大量努力,硼含量对太阳能电池的光电转化效率和稳定性影响巨大,一般地,合格的太阳能硅片中B含量小于0.3×10-6,P含量在 0.5×10-6以下,Fe,Al,Ca等金属杂质在0.1×10-6;Fe,Al,Ca等金属杂质因其分凝系数小可以通过定向凝固法去除;P,Ca等饱和蒸气压较大的杂质可以通过真空熔炼去除,但是B杂质无法通过上述两种方法去除,因此,探索成本低、低能耗、有规模化生产能力的除B技术是冶金法提纯硅的热点研究领域。Due to the many disadvantages of non-renewable and environmental pollution in the use of traditional energy, crystalline silicon solar cells have gradually attracted global attention due to their green advantages. China adds about 18 million kilowatts of photovoltaic power generation equipment every year. In order to meet the rapid development of photovoltaic equipment Therefore, researchers have made a lot of efforts in the field of low-cost and short-process production of solar-grade silicon. The boron content has a great impact on the photoelectric conversion efficiency and stability of solar cells. Generally, the B content in qualified solar silicon wafers is less than 0.3×10 -6 , P content below 0.5×10 -6 , Fe, Al, Ca and other metal impurities at 0.1×10 -6 ; Fe, Al, Ca and other metal impurities can be removed by directional solidification because of their small segregation coefficient; P , Ca and other impurities with high saturated vapor pressure can be removed by vacuum smelting, but B impurities cannot be removed by the above two methods. hot research areas.
中国专利CN02135841.9(郑智雄,一种太阳能电池用高纯度硅及其生产方法)中公开了通过向硅熔体中加入萤石、氧化铁、石灰等制备太阳能级多晶硅的方法,其本质是通过CaF2-CaO造渣氧化精炼的方法将硅中B杂质氧化成BO,B2O3,B2O,BO2,B2O2等硼氧化物,利用硼氧化物在渣系中吉布斯自由能低于在硅液中吉布斯自由能的性质,使得硼氧化物趋向于进入渣液中,实现了硅液中B杂质的去除。厦门大学冶金与矿物加工实验室通过CaO-SiO2-CaF2-BaO渣系造渣实验,在1650-1750℃时成功地将B含量降低到0.15-0.7ppmw(蔡靖,陈朝,罗学涛,高纯冶金硅除硼的研究进展,材料导报,2009, 23(12):81-84)。Chinese patent CN02135841.9 (Zheng Zhixiong, a kind of high-purity silicon for solar cells and its production method) discloses a method for preparing solar-grade polysilicon by adding fluorite, iron oxide, lime, etc. to silicon melt, and its essence is The B impurities in silicon are oxidized into BO, B 2 O 3 , B 2 O, BO 2 , B 2 O 2 and other boron oxides through the method of CaF 2 -CaO slagging oxidation refining, and boron oxides are used in the slag system The property that the SS free energy is lower than the Gibbs free energy in the silicon liquid makes the boron oxide tend to enter the slag liquid, and realizes the removal of B impurities in the silicon liquid. The metallurgical and mineral processing laboratory of Xiamen University successfully reduced the B content to 0.15-0.7ppmw at 1650-1750°C through the slag-making experiment of CaO-SiO 2 -CaF 2 -BaO slag system (Cai Jing, Chen Chao, Luo Xuetao, Research progress on boron removal from high-purity metallurgical silicon, Materials Bulletin, 2009, 23(12):81-84).
美国专利US200501391485(Fujiwara Hiroyasu et al.,Silicon purifyingmethod,slag for purifying silicon,and purified silicon)通过使用CaO-SiO2渣系使硅B含量从7.4ppm降低到0.8 ppm,但该法需要吹气与造渣同时进行。U.S. Patent US200501391485 (Fujiwara Hiroyasu et al., Silicon purifying method, slag for purifying silicon, and purified silicon) reduces the content of silicon B from 7.4 ppm to 0.8 ppm by using CaO-SiO 2 slag system, but this method requires gas blowing and manufacturing slag at the same time.
专利CN101671023A公开了一种多晶硅造渣除硼的方法,采用两种造渣剂,第一种为Na2O+SiO2;第二种为CaO+CaF2+SiO2,可将多晶硅中B含量降低到0.18ppm,但是工艺要求真空条件。Patent CN101671023A discloses a method for polysilicon slagging and boron removal. Two kinds of slagging agents are used, the first is Na 2 O+SiO 2 ; the second is CaO+CaF 2 +SiO 2 , which can reduce the B content in polysilicon to Reduced to 0.18ppm, but the process requires vacuum conditions.
上述工艺在生产过程中存在以下弊端:1、冶炼过程所用石墨坩埚服役时间短导致造渣除硼成本较高;2、CaF2的加入对坩埚和设备腐蚀严重;3、吹气和真空操作对生产设备都有较高要求,使工艺不利于推广。The above process has the following disadvantages in the production process: 1. The graphite crucible used in the smelting process has a short service life, which leads to high cost of slagging and boron removal; 2. The addition of CaF 2 seriously corrodes the crucible and equipment; The production equipment has higher requirements, which makes the technology unfavorable for popularization.
发明内容Contents of the invention
本发明的目的是为了解决现有技术中存在的缺点,如:整体除硼成本较高、对设备腐蚀严重、工艺要求较高,不利于推广和生产,而提出的一种在矿热炉中去除冶金级硅中硼杂质的装置及其方法。The purpose of the present invention is to solve the shortcomings in the prior art, such as: the cost of overall boron removal is high, the equipment is corroded seriously, the process requirements are high, which is not conducive to popularization and production, and a proposed method in submerged arc furnace A device and method for removing boron impurities from metallurgical grade silicon.
为了实现上述目的,本发明采用了如下技术方案:In order to achieve the above object, the present invention adopts the following technical solutions:
一种在矿热炉中去除冶金级硅中硼杂质的装置,包括矿热炉,述矿热炉内底部固定连接设有加热电极,所述矿热炉内固定连接设有传温板,所述传温板位于加热电极的上侧和加热电极匹配对应设置,所述矿热炉内上左侧设有进料口,所述进料口下侧固定连接设有进料管,所述进料口内匹配套设有活塞块,所述活塞块贯穿于进料口设置,所述矿热炉内上侧转动连接设有转动杆,所述转动杆位于进料口的右侧设置,所述转动杆侧壁对称固定连接设有多个搅拌杆,所述转动杆外侧还固定套设有第一齿轮,所述第一齿轮位于多个搅拌杆的上侧设置,所述矿热炉内设有控制杆,所述控制杆贯穿于矿热炉设置,所述控制杆位于矿热炉内固定连接设有第二齿轮,所述第二齿轮和第一齿轮啮合连接设置,所述矿热炉内设有固定连接设有软管,所述软管贯穿于矿热炉设置,所述软管位于矿热炉内一端固定连接设有控制环,所述矿热炉内设有控制环的移动控制装置。A device for removing boron impurities in metallurgical grade silicon in a submerged arc furnace, comprising a submerged arc furnace, the bottom of the submerged arc furnace is fixedly connected with a heating electrode, and the inside of the submerged arc furnace is fixedly connected with a temperature transfer plate, so The temperature transfer plate is located on the upper side of the heating electrode and matched with the heating electrode. The upper left side of the submerged arc furnace is provided with a feeding port, and the lower side of the feeding port is fixedly connected with a feeding pipe. The matching sleeve in the feed port is provided with a piston block, the piston block is set through the feed port, and the upper side of the submerged arc furnace is rotatably connected with a rotating rod, and the rotating rod is located on the right side of the feed port. The side wall of the rotating rod is symmetrically fixedly connected with a plurality of stirring rods, and the outer side of the rotating rod is also fixedly provided with a first gear, and the first gear is located on the upper side of the plurality of stirring rods. There is a control rod, and the control rod is set through the submerged arc furnace, and the control rod is fixedly connected to a second gear in the submerged arc furnace, and the second gear and the first gear are meshed and connected, and the submerged arc furnace There is a fixed connection and a hose inside, and the hose is installed through the submerged arc furnace. One end of the hose is located in the submerged arc furnace and is fixedly connected with a control ring. control device.
优选地,所述移动控制装置包括在矿热炉内固定连接设置的固定板,所述固定板位于第二齿轮的下侧设置,所述固定板的上侧设有内齿环,所述固定板上侧设有环形槽,所述环形槽内对称滑动连接设有两个滑杆,两个所述滑杆贯穿于环形槽和内齿环固定连接设置,所述内齿环和第二齿轮匹配对应设置,所述内齿环内啮合套设有和第二齿轮相同的第三齿轮,所述第三齿轮的下侧固定连接设有第一弹簧,所述第一弹簧的另一侧和固定板固定连接设置,所述内齿环外侧设有导线槽,所述导线槽内缠绕连接设有控制线,所述控制线贯穿于导线槽设置,所述控制环的上侧固定连接设有拉环,所述控制线和拉环固定连接设置。Preferably, the mobile control device includes a fixed plate fixedly connected in the submerged arc furnace, the fixed plate is located on the lower side of the second gear, the upper side of the fixed plate is provided with an inner gear ring, the fixed An annular groove is arranged on the upper side of the plate, and two sliding rods are arranged for symmetrical sliding connection in the annular groove, and the two sliding rods penetrate through the annular groove and are fixedly connected to the inner gear ring, and the inner gear ring and the second gear Matching corresponding settings, the internal meshing sleeve of the inner gear ring is provided with a third gear that is the same as the second gear, the lower side of the third gear is fixedly connected with a first spring, and the other side of the first spring is connected to the second gear. The fixed plate is fixedly connected, and the outer side of the inner gear ring is provided with a wire groove, and a control line is wound and connected in the wire groove, and the control wire is set through the wire groove, and the upper side of the control ring is fixedly connected with a The pull ring is fixedly connected with the control wire and the pull ring.
优选地,所述矿热炉内右侧固定连接设有第一固定环,所述矿热炉内上侧固定连接设有第二固定环,所述控制线贯穿于第一固定环与第二固定环设置。Preferably, the right side of the submerged arc furnace is fixedly connected with a first fixed ring, the upper side of the submerged arc furnace is fixedly connected with a second fixed ring, and the control line runs through the first fixed ring and the second fixed ring. Retaining ring set.
优选地,所述固定板的上侧设有方形孔,所述方形孔内滑动套设有方形杆,所述方形杆贯穿于方形孔,且所述方形杆和第三齿轮固定连接设置。Preferably, a square hole is provided on the upper side of the fixing plate, a square rod is slidingly sleeved in the square hole, the square rod passes through the square hole, and the square rod is fixedly connected to the third gear.
优选地,所述矿热炉内侧壁设有滑槽,所述滑槽内滑动连接设有滑块,所述滑块贯穿于滑槽和控制环固定连接设置。Preferably, the inner side wall of the submerged arc furnace is provided with a chute, and a slider is slidably connected in the chute, and the slider is fixedly connected through the chute and the control ring.
优选地,所述控制杆位于矿热炉内套设有控制筒,所述控制筒位于第二齿轮的上侧设置,所述控制杆位于控制筒内固定套设有移动环,所述移动环的下侧固定连接设有第二弹簧,所述第二弹簧的另一侧固定连接设有转动环,所述转动环和控制筒的底部转动连接设置,所述控制筒内固定套设有限位环,所述限位环位于移动环的上侧和移动环接触连接设置。Preferably, the control rod is located in the submerged arc furnace and is provided with a control cylinder, the control cylinder is located on the upper side of the second gear, the control rod is located in the control cylinder and is fixedly sleeved with a moving ring, and the moving ring The lower side of the second spring is fixedly connected with a second spring, and the other side of the second spring is fixedly connected with a rotating ring, and the rotating ring and the bottom of the control cylinder are rotationally connected, and the inner fixed sleeve of the control cylinder is provided with a limit ring, the limit ring is located on the upper side of the moving ring and is set in contact with the moving ring.
一种在矿热炉中去除冶金级硅中硼杂质的方法,包括以下步骤:A method for removing boron impurities in metallurgical grade silicon in a submerged arc furnace, comprising the following steps:
S1、首先,将活塞块从进料口拿出,将冶金硅放进矿热炉内,启动加热电极,开始进行熔炼,直到原料硅全部变成硅液;S1. First, take out the piston block from the feed port, put the metallurgical silicon into the submerged arc furnace, start the heating electrode, and start smelting until all the raw silicon becomes liquid silicon;
S2、将混匀的Na2CO3-SiO2渣剂通过进料口和进料管投入所述硅液中并保温;S2. Put the mixed Na 2 CO 3 -SiO 2 slag agent into the silicon liquid through the feed port and the feed pipe and keep it warm;
S3、将混匀的CaO-SiO2渣剂通过进料口和进料管投入所述硅液中并保温;S3, put the mixed CaO - SiO slag agent into the silicon liquid through the feed port and the feed pipe and keep it warm;
S4、待整体反应完成后,向下移动控制杆,控制杆带动移动环向下移动,移动环压缩第二弹簧,且控制杆还会带动第二齿轮向下移动,第二齿轮和第三齿轮相接触并带动第三齿轮向下移动,第三齿轮压缩第一弹簧,直到第三齿轮和内齿环之间断开连接,内齿环和第二齿轮啮合连接为止,转动控制杆,控制杆通过第二齿轮带动内齿环转动,在控制线和控制环的自身重力作用下,使控制环向下移动,直到控制环移动到渣边界层的上侧为止,利用软管和相应的压力机将渣液抽出,重复上述操作,再将硅液取出。S4. After the overall reaction is completed, move the control lever downward, the control lever drives the moving ring to move downward, the moving ring compresses the second spring, and the control lever also drives the second gear to move downward, the second gear and the third gear Contact and drive the third gear to move downward, the third gear compresses the first spring until the third gear and the inner gear ring are disconnected, and the inner gear ring and the second gear are engaged and connected, turn the control lever, and the control lever passes through The second gear drives the inner gear ring to rotate, and under the action of the control line and the control ring’s own gravity, the control ring moves downward until the control ring moves to the upper side of the slag boundary layer. Extract the slag liquid, repeat the above operation, and then take out the silicon liquid.
优选地,在进行原料硅、Na2CO3-SiO2渣剂和CaO-SiO2渣剂的添加过程中,转动控制杆,控制杆通过第二齿轮和第一齿轮带动转动杆转动,转动杆带动搅拌杆转动,进行相应的搅拌操作,减少混合的时间。Preferably, during the process of adding raw silicon, Na 2 CO 3 -SiO 2 slag agent and CaO-SiO 2 slag agent, the control rod is rotated, and the control rod drives the rotation rod to rotate through the second gear and the first gear, and the rotation rod Drive the stirring rod to rotate, carry out the corresponding stirring operation, and reduce the mixing time.
优选地,所述步骤S2中的Na2CO3-SiO2渣剂与冶金硅的重量比为 45:100;所述Na2CO3-SiO2渣剂中Na2CO3的质量百分含量为64%-69.5%,余量为SiO2;所述保温温度为1800-1950℃;所述保温时间为20-30 分钟。Preferably, the weight ratio of Na 2 CO 3 -SiO 2 slag agent to metallurgical silicon in the step S2 is 45:100; the mass percentage of Na 2 CO 3 in the Na 2 CO 3 -SiO 2 slag agent It is 64%-69.5%, and the balance is SiO 2 ; the holding temperature is 1800-1950° C.; the holding time is 20-30 minutes.
优选地,所述步骤S3中的CaO-SiO2渣剂与冶金硅的重量比为 87:100;所述CaO-SiO2渣剂CaO的质量百分含量为70%-74%,余量为SiO2;所述保温温度为1800-1900℃;所述保温时间为30-40分钟。Preferably, the weight ratio of the CaO-SiO 2 slag agent to metallurgical silicon in the step S3 is 87:100; the mass percentage of the CaO-SiO 2 slag agent CaO is 70%-74%, and the balance is SiO 2 ; the holding temperature is 1800-1900° C.; the holding time is 30-40 minutes.
与现有技术相比,本发明的有益效果是:Compared with prior art, the beneficial effect of the present invention is:
1、由于在矿热炉中冶炼,不需要石墨坩埚,降低生产成本的同时避免了碳元素污染硅液;1. Due to the smelting in the submerged arc furnace, no graphite crucible is needed, which reduces the production cost and avoids the pollution of silicon liquid by carbon elements;
2、所配渣剂不含CaF2,缓解了冶炼过程对设备的腐蚀;2. The slag agent formulated does not contain CaF 2 , which alleviates the corrosion of equipment during the smelting process;
3、Na2O-SiO2渣液位于硅液上方,形成CaO-Na2O-SiO2渣液后渣液下沉硅液上浮,B杂质在渣液硅液之间获得了良好的传质条件; 4、渣硅液分层后可以先将渣液排出,分离效果好。3. The Na 2 O-SiO 2 slag liquid is located above the silicon liquid, and after the CaO-Na 2 O-SiO 2 slag liquid is formed, the slag liquid sinks and the silicon liquid floats up, and the B impurities obtain good mass transfer between the slag liquid and the silicon liquid Conditions; 4. After the slag-silicon liquid is stratified, the slag liquid can be discharged first, and the separation effect is good.
附图说明Description of drawings
图1为本发明提出的一种在矿热炉中去除冶金级硅中硼杂质的装置及其方法的结构示意图;Fig. 1 is a kind of structural representation of the device and method for removing boron impurities in metallurgical grade silicon in submerged arc furnace that the present invention proposes;
图2为本发明提出的一种在矿热炉中去除冶金级硅中硼杂质的装置及其方法中控制环和矿热炉之间的俯视连接示意图;Fig. 2 is a kind of top view connection schematic diagram between control ring and submerged arc furnace in the device and method for removing boron impurities in metallurgical grade silicon in submerged arc furnace proposed by the present invention;
图3为本发明提出的一种在矿热炉中去除冶金级硅中硼杂质的装置及其方法中控制环、软管和拉环的连接示意图;Fig. 3 is a kind of device and method for removing boron impurities in metallurgical grade silicon proposed by the present invention and the connection schematic diagram of control ring, flexible pipe and draw ring;
图4为图1中A处的结构放大图;Fig. 4 is the enlarged structure diagram of place A in Fig. 1;
图5为本发明提出的一种在矿热炉中去除冶金级硅中硼杂质的装置及其方法中控制筒的结构放大图;Fig. 5 is a kind of structure enlarged view of the control cylinder in the device and method for removing boron impurities in metallurgical grade silicon in submerged arc furnace proposed by the present invention;
图6为本发明提出的一种在矿热炉中去除冶金级硅中硼杂质的装置及其方法的原理示意图。Fig. 6 is a schematic diagram of a device and method for removing boron impurities in metallurgical grade silicon in a submerged arc furnace proposed by the present invention.
图中:1矿热炉、2传温板、3加热电极、4转动杆、5搅拌杆、 6第一齿轮、7进料口、8进料管、9活塞块、10控制杆、11第二齿轮、12第三齿轮、13第一弹簧、14固定板、15方形孔、16方形杆、 17第二固定环、18控制筒、19控制环、20拉环、21滑槽、22滑块、 23软管、24内齿环、25导线槽、26控制线、27第一固定环、28环形槽、29滑杆、30移动环、31第二弹簧、32限位环、33转动环。In the figure: 1 submerged arc furnace, 2 temperature transfer plate, 3 heating electrode, 4 rotating rod, 5 stirring rod, 6 first gear, 7 feeding port, 8 feeding pipe, 9 piston block, 10 control rod, 11 first gear Second gear, 12 third gear, 13 first spring, 14 fixed plate, 15 square hole, 16 square rod, 17 second fixed ring, 18 control cylinder, 19 control ring, 20 pull ring, 21 chute, 22 slider , 23 flexible pipes, 24 internal gear rings, 25 wire grooves, 26 control lines, 27 first fixed rings, 28 annular grooves, 29 slide bars, 30 moving rings, 31 second springs, 32 limit rings, 33 rotating rings.
具体实施方式detailed description
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.
在本发明的描述中,需要理解的是,术语“上”、“下”、“前”、“后”、“左”、“右”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。In describing the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", " The orientation or positional relationship indicated by "outside", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, so as to Specific orientation configurations and operations, therefore, are not to be construed as limitations on the invention.
参照图1-6,一种在矿热炉1中去除冶金级硅中硼杂质的装置,包括矿热炉1,述矿热炉1内底部固定连接设有加热电极3,矿热炉 1内固定连接设有传温板2,传温板2位于加热电极3的上侧和加热电极3匹配对应设置,加热电极3为现有技术,因此不做多余的赘述,矿热炉1内上左侧设有进料口7,进料口7下侧固定连接设有进料管 8,进料口7内匹配套设有活塞块9,活塞块9贯穿于进料口7设置,矿热炉1内上侧转动连接设有转动杆4,转动杆4位于进料口7的右侧设置,转动杆4侧壁对称固定连接设有多个搅拌杆5,转动杆4外侧还固定套设有第一齿轮6,第一齿轮6位于多个搅拌杆5的上侧设置,矿热炉1内设有控制杆10,控制杆10贯穿于矿热炉1设置,控制杆10位于矿热炉1内固定连接设有第二齿轮11,第二齿轮11和第一齿轮6啮合连接设置,矿热炉1内设有固定连接设有软管23,软管23贯穿于矿热炉1设置,软管23位于矿热炉1内一端固定连接设有控制环19,矿热炉1内设有控制环19的移动控制装置,移动控制装置包括在矿热炉1内固定连接设置的固定板14,固定板14位于第二齿轮11的下侧设置,固定板14的上侧设有内齿环24,固定板 14上侧设有环形槽28,环形槽28内对称滑动连接设有两个滑杆29,两个滑杆29贯穿于环形槽28和内齿环24固定连接设置,内齿环24 和第二齿轮11匹配对应设置,内齿环24内啮合套设有和第二齿轮 11相同的第三齿轮12,第三齿轮12的下侧固定连接设有第一弹簧 13,第一弹簧13的另一侧和固定板14固定连接设置,内齿环24外侧设有导线槽25,导线槽25内缠绕连接设有控制线26,控制线26 贯穿于导线槽25设置,控制环19的上侧固定连接设有拉环20,控制线26和拉环20固定连接设置,矿热炉1内右侧固定连接设有第一固定环27,矿热炉1内上侧固定连接设有第二固定环17,控制线26 贯穿于第一固定环27与第二固定环17设置,利用第一固定环27和第二固定环17之间相配合,完成对控制线26运动轨迹的简单限制操作,固定板14的上侧设有方形孔15,方形孔15内滑动套设有方形杆16,方形杆16贯穿于方形孔15,且方形杆16和第三齿轮12固定连接设置,确定并限制第三齿轮12的运动轨迹,进而使第三齿轮12 和内齿环24之间可以更好的进行啮合连接操作,矿热炉1内侧壁设有滑槽21,滑槽21内滑动连接设有滑块22,滑块22贯穿于滑槽21 和控制环19固定连接设置,完成对控制环19的简单限制操作,控制杆10位于矿热炉1内套设有控制筒18,控制筒18位于第二齿轮11 的上侧设置,控制杆10位于控制筒18内固定套设有移动环30,移动环30的下侧固定连接设有第二弹簧31,第二弹簧31的另一侧固定连接设有转动环33,转动环33和控制筒18的底部转动连接设置,控制筒18内固定套设有限位环32,限位环32位于移动环30的上侧和移动环30接触连接设置,利用控制筒18内的第二弹簧31和限位环32完成对移动环30的限制固定操作,进而完成对控制杆10的限制固定操作。Referring to Figures 1-6, a device for removing boron impurities in metallurgical grade silicon in a submerged
一种在矿热炉1中去除冶金级硅中硼杂质的方法,包括以下步骤:A method for removing boron impurities in metallurgical grade silicon in a submerged
S1、首先,将活塞块9从进料口7拿出,将冶金硅放进矿热炉1 内,启动加热电极3,开始进行熔炼,直到原料硅全部变成硅液;S1. First, take out the piston block 9 from the
S2、将混匀的Na2CO3-SiO2渣剂通过进料口7和进料管8投入所述硅液中并保温,Na2CO3-SiO2渣剂与冶金硅的重量比为45:100;所述Na2CO3-SiO2渣剂中Na2CO3的质量百分含量为64%-69.5%,余量为 SiO2;所述保温温度为1800-1950℃;所述保温时间为20-30分钟;S2. Put the mixed Na 2 CO 3 -SiO 2 slag agent into the silicon liquid through the
S3、将混匀的CaO-SiO2渣剂通过进料口7和进料管8投入所述硅液中并保温,CaO-SiO2渣剂与冶金硅的重量比为87:100;所述CaO -SiO2渣剂CaO的质量百分含量为70%-74%,余量为SiO2;所述保温温度为1800-1900℃;所述保温时间为30-40分钟;S3, put the mixed CaO- SiO2 slag agent into the silicon liquid through the
S4、待整体反应完成后,向下移动控制杆10,控制杆10带动移动环30向下移动,移动环30压缩第二弹簧31,且控制杆10还会带动第二齿轮11向下移动,第二齿轮11和第三齿轮12相接触并带动第三齿轮12向下移动,第三齿轮12压缩第一弹簧13,直到第三齿轮12和内齿环24之间断开连接,内齿环24和第二齿轮11啮合连接为止,转动控制杆10,控制杆10通过第二齿轮11带动内齿环24转动,在控制线26和控制环19的自身重力作用下,使控制环19向下移动,直到控制环19移动到渣边界层的上侧为止,利用软管23和相应的压力机将渣液抽出,重复上述操作,再将硅液取出,在进行原料硅、Na2CO3-SiO2渣剂和CaO-SiO2渣剂的添加过程中,转动控制杆 10,控制杆10通过第二齿轮11和第一齿轮6带动转动杆4转动,转动杆4带动搅拌杆5转动,进行相应的搅拌操作,减少混合的时间。S4. After the overall reaction is completed, move the control lever 10 downward, the control lever 10 drives the moving ring 30 to move downward, the moving ring 30 compresses the second spring 31, and the control lever 10 also drives the second gear 11 to move downward, The second gear 11 is in contact with the third gear 12 and drives the third gear 12 to move downward, and the third gear 12 compresses the first spring 13 until the connection between the third gear 12 and the inner gear ring 24 is disconnected, and the inner gear ring 24 Rotate the control lever 10 until it meshes with the second gear 11, the control lever 10 drives the inner gear ring 24 to rotate through the second gear 11, and the control ring 19 moves downward under the action of the control line 26 and the control ring 19's own gravity , until the control ring 19 moves to the upper side of the slag boundary layer, use the hose 23 and the corresponding press to extract the slag liquid, repeat the above operation, and then take out the silicon liquid, and carry out the raw material silicon, Na 2 CO 3 -SiO 2 During the addition of slag agent and CaO-SiO 2 slag agent, turn the control rod 10, the control rod 10 drives the rotation rod 4 to rotate through the second gear 11 and the first gear 6, and the rotation rod 4 drives the stirring rod 5 to rotate, and the corresponding The stirring operation reduces the mixing time.
本发明中,首先,将活塞块9从进料口7拿出,将冶金硅放进矿热炉1内,启动加热电极3,开始进行熔炼,此为现有技术,不做多余的赘述,直到原料硅全部变成硅液;将混匀的Na2CO3-SiO2渣剂通过进料口7和进料管8投入硅液中并保温,其中Na2CO3-SiO2渣剂与冶金硅的重量比为45:100;的Na2CO3-SiO2渣剂中Na2CO3的质量百分含量为64%-69.5%,余量为SiO2;保温温度为1800-1950℃;保温时间为20-30分钟;将混匀的CaO-SiO2渣剂通过进料口7和进料管8 投入硅液中并保温,其中CaO-SiO2渣剂与冶金硅的重量比为87:100; CaO-SiO2渣剂CaO的质量百分含量为70%-74%,余量为SiO2;保温温度为1800-1900℃;保温时间为30-40分钟;待整体反应完成后,向下移动控制杆10,控制杆10带动移动环30向下移动,移动环30 压缩第二弹簧31,且控制杆10还会带动第二齿轮11向下移动,第二齿轮11和第三齿轮12相接触并带动第三齿轮12向下移动,第三齿轮12压缩第一弹簧13,直到第三齿轮12和内齿环24之间断开连接,内齿环24和第二齿轮11啮合连接为止,转动控制杆10,控制杆10通过第二齿轮11带动内齿环24转动,在控制线26和控制环19的自身重力作用下,使控制环19向下移动,直到控制环19移动到渣边界层的上侧为止,利用软管23和相应的压力机将渣液抽出,重复上述操作,再将硅液取出,在进行原料硅、Na2CO3-SiO2渣剂和 CaO-SiO2渣剂的添加过程中,转动控制杆10,控制杆10通过第二齿轮11和第一齿轮6带动转动杆4转动,转动杆4带动搅拌杆5转动,进行相应的搅拌操作,减少混合的时间,硅液中的B杂质扩散到渣硅界面被Na2CO3分解产物Na2O,碱土金属氧化物CaO,以及能提供游离 [O]的SiO2所氧化。由于硼氧化物BO、B2O3、B2O、BO2、B2O2等在渣系中有更低的吉布斯自由能,使得硼氧化物趋向于进入渣液中,实现了硅液中B杂质的去除。另外,由于形成的Na2O-SiO2渣液密度小于硅液,所以渣液位于硅液上方;当加入混匀的CaO-SiO2渣剂后形成CaO -Na2O-SiO2渣系,此时渣液密度大于硅液密度;渣液下沉硅液上浮渣硅液体之间形成对流,增大了渣硅液体之间的接触面积,改善了杂质在渣液硅液之间传质的动力学条件,提高了整体除硼效果,反应达到平衡后渣硅液体之间出现分层,矿热炉出料口(即控制环和软管)打开后渣液首先流出从而实现了渣硅液体的分离。In the present invention, first, the piston block 9 is taken out from the
以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。The above is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto, any person familiar with the technical field within the technical scope disclosed in the present invention, according to the technical solution of the present invention Any equivalent replacement or change of the inventive concepts thereof shall fall within the protection scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210959737.0A CN115468419B (en) | 2022-08-11 | 2022-08-11 | Device and method for removing boron impurities in metallurgical grade silicon in submerged arc furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210959737.0A CN115468419B (en) | 2022-08-11 | 2022-08-11 | Device and method for removing boron impurities in metallurgical grade silicon in submerged arc furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115468419A true CN115468419A (en) | 2022-12-13 |
| CN115468419B CN115468419B (en) | 2024-09-20 |
Family
ID=84367184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210959737.0A Active CN115468419B (en) | 2022-08-11 | 2022-08-11 | Device and method for removing boron impurities in metallurgical grade silicon in submerged arc furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115468419B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115353109A (en) * | 2022-07-28 | 2022-11-18 | 商南中剑实业有限责任公司 | Device and method for removing impurities in industrial silicon by using sodium slag agent doped with tin powder |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008127254A (en) * | 2006-11-22 | 2008-06-05 | Kyocera Corp | Method for producing silicon ingot |
| CN102259865A (en) * | 2011-06-01 | 2011-11-30 | 宁夏银星多晶硅有限责任公司 | Slag washing process for removing boron from metallurgical polycrystalline silicon |
| CN103043664A (en) * | 2012-12-13 | 2013-04-17 | 青岛隆盛晶硅科技有限公司 | Method and device for directionally solidifying and purifying polysilicon by vacuum extraction of tailing |
| CN103265035A (en) * | 2013-06-05 | 2013-08-28 | 青岛隆盛晶硅科技有限公司 | Method for realizing convection agitation of silicon slag in medium smelting |
| CN103318894A (en) * | 2013-06-27 | 2013-09-25 | 大连理工大学 | Method for removing boron in polycrystalline silicon |
| CN203222486U (en) * | 2013-05-06 | 2013-10-02 | 青岛隆盛晶硅科技有限公司 | Slag taking equipment after slag-making smelting |
| CN105540593A (en) * | 2015-12-31 | 2016-05-04 | 厦门大学 | Boron removal method and device through activated slag agent |
| CN217025360U (en) * | 2022-04-06 | 2022-07-22 | 泸水康华硅业有限公司 | Strengthening device for slagging and boron removal of metallic silicon |
-
2022
- 2022-08-11 CN CN202210959737.0A patent/CN115468419B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008127254A (en) * | 2006-11-22 | 2008-06-05 | Kyocera Corp | Method for producing silicon ingot |
| CN102259865A (en) * | 2011-06-01 | 2011-11-30 | 宁夏银星多晶硅有限责任公司 | Slag washing process for removing boron from metallurgical polycrystalline silicon |
| CN103043664A (en) * | 2012-12-13 | 2013-04-17 | 青岛隆盛晶硅科技有限公司 | Method and device for directionally solidifying and purifying polysilicon by vacuum extraction of tailing |
| CN203222486U (en) * | 2013-05-06 | 2013-10-02 | 青岛隆盛晶硅科技有限公司 | Slag taking equipment after slag-making smelting |
| CN103265035A (en) * | 2013-06-05 | 2013-08-28 | 青岛隆盛晶硅科技有限公司 | Method for realizing convection agitation of silicon slag in medium smelting |
| CN103318894A (en) * | 2013-06-27 | 2013-09-25 | 大连理工大学 | Method for removing boron in polycrystalline silicon |
| CN105540593A (en) * | 2015-12-31 | 2016-05-04 | 厦门大学 | Boron removal method and device through activated slag agent |
| CN217025360U (en) * | 2022-04-06 | 2022-07-22 | 泸水康华硅业有限公司 | Strengthening device for slagging and boron removal of metallic silicon |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115353109A (en) * | 2022-07-28 | 2022-11-18 | 商南中剑实业有限责任公司 | Device and method for removing impurities in industrial silicon by using sodium slag agent doped with tin powder |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115468419B (en) | 2024-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yu et al. | Review of silicon recovery in the photovoltaic industry | |
| CN101481111B (en) | Method for preparing high-purity silicon by high temperature gas-solid reaction | |
| CN109052407A (en) | A method for recycling and purifying silicon cutting waste | |
| CN101671022B (en) | Method for recovering solar-grade polysilicon from single crystal silicon/polysilicon cutting slurry | |
| WO2018001265A1 (en) | Molten carbon thermal process magnesium preparation technique and magnesium refining system | |
| CN114480834B (en) | Method and reactor for recovering valuable metals from waste lithium-ion batteries | |
| CN108059167A (en) | Cut the method and device that silica flour slag prepares HIGH-PURITY SILICON | |
| CN107574318A (en) | A kind of sodium slag method for purifying and separating and its equipment for purifying used | |
| CN115468419A (en) | Device and method for removing boron impurities in metallurgical-grade silicon in ore-smelting furnace | |
| CN104891500A (en) | Method for removing boron in metallurgical grade silicon | |
| CN103395787A (en) | Apparatus and preparation method for high purity silicon from silicon ore | |
| CN101519204A (en) | Process for purification and utilization of cutting waste of solar-grade silicon ingot | |
| CN113060708A (en) | Production equipment of high-purity selenium and process for preparing high-purity selenium by using production equipment | |
| CN109022799A (en) | The device and its smelting technology of the continuous two-part melting earth of positive pole of one | |
| CN101870472A (en) | A method for removing boron and phosphorus impurities in industrial silicon by using rare earth oxides | |
| CN106555224A (en) | A kind of production method and production equipment of monocrystal silicon | |
| CN115724433A (en) | Quartz sand plasma gas-solid reaction purification device and purification method | |
| CN109354024A (en) | A kind of device and method of infant industry silicon separation, impurity removal | |
| CN202201949U (en) | Smelting furnace for directional solidification and purification of high-purity aluminum | |
| CN101935040A (en) | Method for removing low-temperature impurities from silicon by vacuum electric arc melting method | |
| CN202226676U (en) | Equipment for purifying polycrystalline silicon by directional solidification and slag filtration smelting | |
| CN103011169A (en) | Preparation method for sheet silicon | |
| CN103539125B (en) | Medium melting is connected the method for purifying polycrystalline silicon with preliminary directional freeze | |
| CN110055418A (en) | Realize the smelting system and method for smelting of lead anode slurry continuous multi-stage synthetical recovery | |
| Zhuang et al. | Phase-separation induced by retired photovoltaic glass enhances the quality of ferrosilicon alloy prepared from silicon powder waste |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |