CN103259462A - Semi-conductor thermoelectric power generation device - Google Patents
Semi-conductor thermoelectric power generation device Download PDFInfo
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- CN103259462A CN103259462A CN201310217581XA CN201310217581A CN103259462A CN 103259462 A CN103259462 A CN 103259462A CN 201310217581X A CN201310217581X A CN 201310217581XA CN 201310217581 A CN201310217581 A CN 201310217581A CN 103259462 A CN103259462 A CN 103259462A
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Abstract
The invention relates to the field of thermoelectric conversion, in particular to a semi-conductor thermoelectric power generation device used for utilizing waste heat of smoke of marine main engines. The semi-conductor thermoelectric power generation device comprises a first channel used for enabling high-temperature fluid to pass and a second channel used for enabling low-temperature fluid to pass. The semi-conductor thermoelectric power generation device is characterized in that the first channel comprises a first main channel and a plurality of first sub-channels, wherein the first sub-channels are formed by the first main channel in a scattered mode in the route of the high-temperature fluid, the first sub-channels pass through the interior of a second channel, and a semi-conductor thermoelectric power generation module is arranged inside the second channel and outside the first sub-channels. The semi-conductor thermoelectric power generation device is high in heat exchange efficiency, and good in thermal energy repetitive utilization rate.
Description
Technical field:
The present invention relates to thermoelectric conversion field, be particularly useful for a kind of semiconductor thermo-electric generation apparatus that the marine main engine fume afterheat is utilized.
Background technology:
According to statistics, spot ship power set fuel oil heat comprehensive utilization ratio only has about 50%, and remaining about 50% heat becomes used heat, and most of form with high-temperature flue gas etc. is dispersed in the atmosphere, has caused great energy waste.Marine ship, especially small-sized marine ship because its fuel oil that can carry is comparatively limited, has only fuel oil are effectively utilized, and could reduce the boats and ships supply, prolong the boats and ships maximum operating time and increase voyage.
Marine main engine is as the core component of ship power, and its fuel consumption is higher relatively, so its waste heat discharge amount is also higher, main frame discharging used heat accounts for about 30% of total fuel oil heat, and exhaust gas temperature is usually at 100 ℃--and 550 ℃.How more effectively to recycle the waste heat of marine main engine waste gas, become an important topic efficiently utilizing boats and ships used heat.
Semi-conductor thermo-electric generation module can convert temperature difference to electrical potential difference, power supply is charged, so it can be applied to the marine main engine Waste Heat Recovery.Its operation principle is based on the Bezier effect of semi-conducting material: in P/N type semiconductor, the hole of temperature end (electronics) concentration ratio low-temperature end is big, under the driving of this concentration gradient, hole (electronics) is because the thermal diffusion effect, can spread to low-temperature end from temperature end, thereby form electrical potential difference.The hot junction of P type and N type semiconductor is linked to each other, and cold junction open circuit can obtain a voltage at the open circuit place, and the PN junction of some is together in series, and just can obtain sufficiently high voltage.
Semiconductor thermo-electric generation apparatus, mostly be at the heat pipe that loads thermal source and the contact-making surface that loads between the cold pipe of low-temperature receiver semi-conductor thermo-electric generation module to be set, to reach the purpose of thermo-electric generation, yet, because it is circular that existing pipe mostly is, so the contact area of heat pipe and cold pipe is limited, be unfavorable for the absorption of semi-conductor thermo-electric generation module hot junction heat and the release of cold junction heat, heat recovery efficiency is low.High hot-air does not often carry out effective heat release as yet and namely is discharged in the atmosphere, causes great energy waste.
Summary of the invention:
The purpose of this invention is to provide a kind of semiconductor thermo-electric generation apparatus.Its heat exchanger effectiveness height, the heat energy recycling is effective.
The technical scheme of a kind of semiconductor thermo-electric generation apparatus of the present invention is achieved in that
A kind of semiconductor thermo-electric generation apparatus, it comprises the first passage that passes through for high temperature fluid and the second channel that passes through for cryogen, it is characterized in that: described first passage comprises that first main channel and first main channel disperse some first subchannels that form on the high temperature fluid stroke, first subchannel is provided with semi-conductor thermo-electric generation module in the first subchannel outer wall by second channel inside in the second channel.
A kind of semiconductor thermo-electric generation apparatus of the present invention compared with prior art has following advantage:
1. by first subchannel is set, make under the situation identical with all first subchannel sectional areas of first main channel (its cross sectional shape is also identical), the girth sum in the outer cross section of all first subchannels is greater than the outer perimeter of section of first passage, increase the contact area of the interior high temperature fluid of first subchannel and semi-conductor thermo-electric generation module, improved heat exchanger effectiveness;
2. first subchannel is arranged at second channel inside, and semi-conductor thermo-electric generation module is located at second channel inside, guarantee that on the one hand all heats on the first subchannel outside wall surface all participate in exchange, empty calory runs off, guaranteeing on the other hand that cryogen in the second channel can fully be held with the release of the heat of semi-conductor thermo-electric generation module carries out exchange heat, has further improved heat exchanger effectiveness;
3. first subchannel, second channel contact with semi-conductor thermo-electric generation module respectively, do not need extra heat transfer component that heat energy is absorbed transmission, have not only saved material cost, have also avoided the further scattering of heat transfer component to heat simultaneously.
Semi-conductor thermo-electric generation module described above closely contacts with first subchannel.
The flow direction of high temperature fluid is opposite with the flow direction of cryogen in the second channel in first subchannel described above.The mode of employing countercurrent flow can more effective raising heat exchanger effectiveness.
Second channel described above inside also is provided with some deflection plates on the cryogen stroke, offer first through hole that some confession first subchannels pass on the deflection plate.By deflection plate is set, can improve flow velocity and the turbulent extent of cryogen in the second channel, improve the heat exchanger effectiveness of cryogen and semi-conductor thermo-electric generation module.
A kind of semiconductor thermo-electric generation apparatus described above comprises:
One housing, housing two ends are respectively equipped with a high temperature fluid entrance and high temperature fluid outlet;
Two dividing plates are positioned at enclosure interior, and each dividing plate is separated housing one end respectively, and two dividing plate corresponding positions offer be used to second through hole of burying first subchannel underground, and first subchannel is arranged between corresponding second through hole of two dividing plates;
One cryogen entrance, between two dividing plates, opening is near the dividing plate of the side in the housing;
The outlet of one cryogen, between two dividing plates, opening is near the dividing plate of the opposite side in the housing;
The outlet of described high temperature fluid entrance and high temperature fluid respectively and form first main channel between its dividing plate that closes on, high temperature fluid flow to first main channel of the housing other end by first subchannel from first main channel of housing one end, form first passage; Cryogen cryogen entrance of a side dividing plate in the housing flow to the cryogen outlet of opposite side dividing plate in the housing, forms second channel.
The cross section outline of first subchannel described above is circular.First subchannel of circular outline can guarantee that high temperature fluid and the semiconductor thermo-electric generation apparatus in first subchannel carries out uniform heat exchange.
Spacing between each first subchannel described above is not less than 1.25 times of the first subchannel external diameter.In order to when guaranteeing heat exchanger effectiveness, satisfy dividing plate to the support strength of first subchannel.
High temperature fluid in the first passage described above is high-temperature flue gas, and the cryogen in the second channel is cooling water.Described cooling water can be seawater, and high temperature fluid is the high-temperature flue gas that marine main engine is discharged.
Description of drawings:
Below in conjunction with accompanying drawing the present invention is done detailed explanation:
Fig. 1 is the annexation schematic diagram of a kind of semiconductor thermo-electric generation apparatus of the present invention;
Fig. 2 is the structural representation of a kind of semiconductor thermo-electric generation apparatus enclosure interior of the present invention;
Fig. 3 is the A-A cutaway view of Fig. 2;
Fig. 4 is the structural representation of the dividing plate of a kind of semiconductor thermo-electric generation apparatus of the present invention;
Fig. 5 is the structural representation of the deflection plate of a kind of semiconductor thermo-electric generation apparatus of the present invention;
Fig. 6 is the structural representation that semi-conductor thermo-electric generation module of the present invention is connected with first subchannel;
Fig. 7 is the structural representation of the cross section that is connected with first subchannel of semi-conductor thermo-electric generation module of the present invention;
Fig. 8 is the structural representation of semi-conductor thermo-electric generation module of the present invention;
Fig. 9 is the schematic diagram that first subchannel is arranged by square;
Figure 10 is that first subchannel is by the schematic diagram of circular arrangement.
Embodiment:
As Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5 and a kind of semiconductor thermo-electric generation apparatus shown in Figure 6, it comprises a housing 1, housing 1 comprises an inlet end 11 and an outlet side 12, be provided with two dividing plates 2 in the housing 1, each dividing plate 2 is separated housing 1 one ends and is formed first main channel 31, two dividing plate corresponding positions offer be used to second through hole 6 of burying some first subchannels 32 underground, and each first subchannel 32 is arranged on two dividing plates 2 between corresponding second through hole 6, and are communicated with first main channel 31 of housing 1 both sides.High-temperature flue gas also passes through some first subchannels 32, reaches first main channel 31 of housing opposite side by first main channel 31 that inlet end 11 enters housing one side, and by outlet side discharge 12, forms first passage 3;
The outside wall surface of housing between two dividing plates also offers a water inlet 13 and a delivery port 14, described water inlet 13 is near outlet side 12, delivery port 14 is near inlet end 11, cooling water enters in the space between housing two dividing plates and from delivery port 14 by water inlet 13 and flows out, form second channel 4, flow of cooling water direction in high-temperature flue gas in the first passage 3 and the second channel 4 is opposite, has improved heat exchanger effectiveness.
As Fig. 6, Fig. 7 and the described semi-conductor thermo-electric generation module 7 of Fig. 8, it is located at outside second channel 6 interior first subchannels 32, it comprises that the heat absorption end 71 as first subchannel, 32 outer walls discharges end 72 with the heat that contacts with cooling water in the second channel, heat absorption end 71 discharges end 72 with heat and contacts with cold junction with the hot junction of PN junction 75 by electric insulation layer 73, electric conductor 74 successively respectively, and institute's live conductor is connected successively with PN junction and forms a closed charge circuit with power supply.
On second channel 4, also be provided with some deflection plates 8 in the housing, offer first through hole 5 that some confession first subchannels pass on the deflection plate 8.By deflection plate is set, can improve flow velocity and the turbulent extent of cooling water in the second channel, improve the heat exchanger effectiveness of cryogen and semi-conductor thermo-electric generation module.The spacing of described deflection plate 8 is not less than 1/5 of two clapboard spacings, in order to avoid increase the cooling water flow dynamic resistance.Influence heat exchanger effectiveness.
Described all first subchannel, 32 sectional area sums are housing inlet end 11 or outlet side 12 sectional areas 1.05 to 1.1 times.Excessive with the resistance that prevents from discharging fume.The arrangement mode of first subchannel can according to the requirement of hull shape and size select as shown in Figure 9 square or circular arrangement mode as shown in figure 10, to increase the flow velocity of cooling water in the second channel, improve heat exchanger effectiveness.
Spacing between described each first subchannel is not less than 1.25 times of the first subchannel external diameter.In order to when guaranteeing heat exchanger effectiveness, satisfy dividing plate to the support strength of first subchannel.
The cross section outline of described first subchannel 32 is circular.To guarantee that high temperature fluid and semiconductor thermo-electric generation apparatus in first subchannel carry out uniform heat exchange.
During work, first subchannel 32 is delivered to the heat absorption end 72 of semi-conductor thermo-electric generation module with the heat of high-temperature flue gas, and the cooling waters in the second channel 4 discharge end 71 from the heat of semi-conductor thermo-electric generation module and absorb heats simultaneously.Make semi-conductor thermo-electric generation module heat absorption end and heat discharge end and form big temperature difference, Bezier effect according to semi-conducting material, be located at the inner electric current that forms of PN junction that semi-conductor thermo-electric generation module heat absorption end and heat discharge end, and external power supply 9 charged, finish the process that temperature is directly changed into electric energy.
Be a kind of execution mode that provides in conjunction with particular content as mentioned above, can not assert that concrete enforcement of the present invention is confined to these explanations.Semi-conductor thermo-electric generation module is not limited in that disclosed heat exchange mode with structure, high-temperature flue gas and cooling water of housing, dividing plate is not limited in countercurrent flow in the literary composition as described, and the cross section outline of described first subchannel is not limited in circle etc.All approximate, identical with the inventive method, structure etc., or for making some technology deduction or replace under the inventive concept prerequisite, all should be considered as protection scope of the present invention.
Claims (8)
1. semiconductor thermo-electric generation apparatus, it comprises the first passage that passes through for high temperature fluid and the second channel that passes through for cryogen, it is characterized in that: described first passage comprises that first main channel and first main channel disperse some first subchannels that form on the high temperature fluid stroke, first subchannel is provided with semi-conductor thermo-electric generation module in the first subchannel outer wall through second channel inside in the second channel.
2. a kind of semiconductor thermo-electric generation apparatus according to claim 1, it is characterized in that: described semi-conductor thermo-electric generation module closely contacts with first subchannel.
3. a kind of semiconductor thermo-electric generation apparatus according to claim 1 is characterized in that: the flow direction of high temperature fluid is opposite with the flow direction of the interior cryogen of second channel in described first subchannel.
4. a kind of semiconductor thermo-electric generation apparatus according to claim 1, it is characterized in that: described second channel inside also is provided with some deflection plates on the cryogen stroke, offers first through hole that some confession first subchannels pass on the deflection plate.
5. according to the described a kind of semiconductor thermo-electric generation apparatus of one of claim 1 to 4, it is characterized in that: it comprises:
One housing, housing two ends are respectively equipped with a high temperature fluid entrance and high temperature fluid outlet;
Two dividing plates are positioned at enclosure interior, and each dividing plate is separated housing one end respectively, and two dividing plate corresponding positions offer be used to second through hole of burying first subchannel underground, and first subchannel is arranged between corresponding second through hole of two dividing plates;
One cryogen entrance, between two dividing plates, opening is near the dividing plate of the side in the housing;
The outlet of one cryogen, between two dividing plates, opening is near the dividing plate of the opposite side in the housing;
The outlet of described high temperature fluid entrance and high temperature fluid respectively and form first main channel between its dividing plate that closes on, high temperature fluid flow to first main channel of the housing other end by first subchannel from first main channel of housing one end, form first passage; Cryogen cryogen entrance of a side dividing plate in the housing flow to the cryogen outlet of opposite side dividing plate in the housing, forms second channel.
6. a kind of semiconductor thermo-electric generation apparatus according to claim 5 is characterized in that: the cross section outline of described first subchannel is for circular.
7. a kind of semiconductor thermo-electric generation apparatus according to claim 6 is characterized in that: the spacing between described each first subchannel is not less than 1.25 times of the first subchannel external diameter.
8. according to the described described a kind of semiconductor thermo-electric generation apparatus of one of claim 1 to 4, it is characterized in that: the high temperature fluid in the described first passage is high-temperature flue gas, and the cryogen in the second channel is cooling water.
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| CN201310217581XA CN103259462A (en) | 2013-06-03 | 2013-06-03 | Semi-conductor thermoelectric power generation device |
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| CN201310217581XA CN103259462A (en) | 2013-06-03 | 2013-06-03 | Semi-conductor thermoelectric power generation device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06129212A (en) * | 1992-10-12 | 1994-05-10 | Nkk Corp | Exhaust gas disposal system during burning of garbage |
| CN201623673U (en) * | 2010-01-25 | 2010-11-03 | 武汉理工大学 | Generating set utilizing automobile exhaust waste heat temperature difference |
| US20110258995A1 (en) * | 2008-11-24 | 2011-10-27 | Emitec Gesellschaft Fur Emissionstechnologie Mbh | Module for a thermoelectric generator, electrical conductor, thermoelectric generator, motor vehicle and method for producing a module |
| US8183456B1 (en) * | 2002-05-23 | 2012-05-22 | Jon Murray Schroeder | Thermoelectric device with make-before-break high frequency converter |
| CN203278705U (en) * | 2013-06-03 | 2013-11-06 | 广新海事重工股份有限公司 | Semiconductor thermoelectric generation apparatus |
-
2013
- 2013-06-03 CN CN201310217581XA patent/CN103259462A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06129212A (en) * | 1992-10-12 | 1994-05-10 | Nkk Corp | Exhaust gas disposal system during burning of garbage |
| US8183456B1 (en) * | 2002-05-23 | 2012-05-22 | Jon Murray Schroeder | Thermoelectric device with make-before-break high frequency converter |
| US20110258995A1 (en) * | 2008-11-24 | 2011-10-27 | Emitec Gesellschaft Fur Emissionstechnologie Mbh | Module for a thermoelectric generator, electrical conductor, thermoelectric generator, motor vehicle and method for producing a module |
| CN201623673U (en) * | 2010-01-25 | 2010-11-03 | 武汉理工大学 | Generating set utilizing automobile exhaust waste heat temperature difference |
| CN203278705U (en) * | 2013-06-03 | 2013-11-06 | 广新海事重工股份有限公司 | Semiconductor thermoelectric generation apparatus |
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Application publication date: 20130821 |