CN103258761B - A kind of plasma etch chamber room controlling wafer temperature and method thereof - Google Patents
A kind of plasma etch chamber room controlling wafer temperature and method thereof Download PDFInfo
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Abstract
nullThe present invention provides a kind of plasma etch chamber controlling wafer temperature and method thereof，Plasma etch chamber includes: connects the upper electrode of earth lead and connects the bottom electrode of radio frequency source，And be positioned at、Electrostatic chuck between bottom electrode，It is provided with quartz window at upper base part，It is provided with heater between quartz window and upper electrode，Coolant circulation device it is provided with inside electrostatic chuck，It is provided with reflection unit between heater and upper electrode，Or scribble reflectance coating at the inner surface of the heater inner surface relative with upper electrode or side，Utilize reflectance coating or reflection unit can gather on wafer by the light of heater and be uniformly distributed at crystal column surface，Improve the utilization rate of the heat of heater，Coolant circulation device below recycling electrostatic chuck the most accurately controls the temperature of crystal column surface，Achieve the good control to wafer temperature，And the simple in construction of this plasma etching chamber，It is easily maintained.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a plasma etching chamber for controlling wafer temperature and a method thereof.
Background
In the plasma etching process, a higher plasma source is often used to etch the wafer and the surface thereof, so as to achieve a higher etching rate, however, the thermal load of the wafer is increased. In addition, as the stacking structure in the wafer is more and more complex, the reaction chamber needs to bear more process content, and the complex stacking structure contains a large amount of conversion, so that the etching process is more complicated, which causes more difficulty in matching different reaction chambers. In semiconductor etching applications, the control of the wafer temperature is a critical parameter, the uniformity of the temperature distribution on the wafer surface is very important, and if the temperature distribution on the wafer surface is not uniform, the etching rate of different positions of the wafer will be affected, which may cause unstable process and damage to the structure of the wafer.
Generally, in a plasma etching chamber, a heating component for controlling the temperature of a wafer is arranged below an electrostatic chuck at the bottom of the wafer, and the temperature of the wafer is controlled by heating or cooling the electrostatic chuck and the like and by the heat conduction effect between the electrostatic chuck and the wafer. The electrostatic chuck can be single region, the two regions of interior outer ring, different kinds such as multizone to the temperature of the different positions of control wafer, but because the thermal-conductive accuse temperature mechanism of contact, make contact and indirect to the temperature control of wafer, cause the reaction time overlength, the relatively poor problem of homogeneity.
The problem can be avoided by adopting a non-contact temperature control mode which directly acts on the surface of the wafer. Patent US2008/0170842 a1 provides a chamber for processing a substrate and a method for uniformly heating a substrate to a target temperature, which provides a chamber comprising: the substrate heating device comprises a cavity, a substrate support arranged in the cavity, an edge ring arranged on a substrate nail and used for supporting a substrate, a first heat source used for heating the substrate, a second heat source used for heating the edge ring, and a first heat source and a second heat source which are independent; in one embodiment, the first and second heat sources are disposed on the same side of the edge ring. A quartz window 18 is arranged below the upper electrode, a heating part is arranged between the quartz window 18 and the upper electrode, the heating part adopts a radiation heating mode, a first heat source 37 is arranged in the middle of the heating part, second heat sources 38 are arranged at two ends of the heating part, namely two sides of the first heat source, the second heat sources are connected with a heating power controller, and the first heating source or the second heating source can be an ultraviolet lamp, a laser diode, a resistance heater, a light emitting diode or any other suitable safety grid or combined heating element. In addition, the heating part may be disposed in a vertical cavity of the reflecting body 53, and the cooling passage is disposed in the reflecting body 53. In the patent, a heating mode of non-contact and direct action on the wafer is adopted, the purpose of uniform distribution of the surface temperature of the wafer is achieved by heating the substrate by the first heat source 37 and heating the edge of the substrate by the second heat source 38, and the reflector 53 is arranged to further reflect the heat source to the wafer. The heating part is directly connected to the upper electrode, the reflectors 53 are disposed at both sides of the heating part, so that only heat at both sides can be reflected to the wafer, and there is no reflector at the rear side of the heating part, so that the heat cannot be reflected to the wafer, and the reflectors 53 cannot move freely, resulting in loss of heat source; in addition, the method adopts two heat sources to achieve the aim of multi-point temperature control, thereby increasing the structural and process complexity of the cavity and increasing the difficulty of maintenance of the cavity.
Accordingly, there is a need for improvements in heating elements in a processing chamber to improve the heat utilization of the heating elements, to even the temperature distribution across the wafer surface, and to simplify the chamber structure for ease of maintenance.
Disclosure of Invention
In order to overcome the defects of the problems, the invention aims to improve the heat utilization rate of the heating part, make the temperature distribution on the surface of the wafer uniform and achieve the aims of simplifying the structural complexity of the cavity and facilitating the maintenance.
The invention provides a plasma etching chamber, which comprises an upper electrode connected with a grounding wire, a lower electrode connected with a radio frequency source and an electrostatic chuck positioned between the upper electrode and the lower electrode, and comprises:
a quartz window is arranged below the upper electrode;
a heating device is arranged between the quartz window and the upper electrode;
a coolant circulating device is arranged inside the electrostatic chuck; wherein,
a reflecting device is arranged between the heating device and the upper electrode, or a reflecting coating is coated on the inner surface or the inner surface of the side surface of the heating device opposite to the upper electrode.
Preferably, the reflecting means is a reflective hood.
Preferably, the reflecting means can be rotated at any angle, or moved in a horizontal or vertical direction.
Preferably, the center position of the reflecting device is aligned with the center position of the wafer.
Preferably, the reflecting device is connected with a movable device, and the movable device is connected with a position regulator.
Preferably, the position regulator controls the movable device to rotate at any angle or move in the horizontal or vertical direction, so as to drive the reflection device to rotate around the vertical center line of the movable device, or move in the horizontal or vertical direction.
Preferably, the center of the reflecting device is connected with the movable device.
Preferably, the edge of the reflecting means carries an auxiliary mark.
Preferably, the auxiliary markings of the reflecting means are four protrusions or graduation marks of the edge of the reflecting means, which four protrusions bisect the edge of the reflecting means.
Preferably, the reflecting device comprises an upper layer and a lower layer, and a light-emitting device is arranged between the upper layer and the lower layer.
Preferably, the cross section of the reflecting device is arc-shaped, and the horizontal projection plane of the reflecting device is circular.
Preferably, the inner surface of the reflecting means is coated with a reflective coating.
Preferably, the inner surface of the reflective means is reflective coated transparent or translucent or opaque.
Preferably, the material of the reflecting device is an inorganic non-metallic material.
Preferably, the material of the reflecting means is resin or glass.
Preferably, the horizontal projection area of the reflecting device is larger than or equal to the horizontal cross-sectional area of the heating device.
Preferably, the heating device is coated with a reflective coating on the inner surface opposite to the upper electrode and on the inner surface of the side face.
Preferably, the outer side surface of the electrostatic chuck carries an auxiliary mark.
Preferably, the auxiliary mark of the outer side surface of the electrostatic chuck is a graduation mark of the outer side surface of the electrostatic chuck.
Preferably, the auxiliary mark on the outer side surface of the electrostatic chuck is provided with four protrusions, and the central lines of the four protrusions divide the circumference of the wafer into four equal parts.
Preferably, the heating device is an infrared heater.
Preferably, a power adjusting device is connected with the heating device.
The invention also provides a method for controlling the temperature of the wafer by adopting the plasma etching chamber, which comprises the following steps:
step S01: loading a wafer onto the electrostatic chuck;
step S02: starting the heating device, adjusting the power adjusting device of the heating device, and setting the temperature to heat the wafer;
step S03: after the reflection process, the light rays of the heating device are gathered on the wafer and are uniformly distributed on the wafer;
step S04: and turning on the coolant circulating device to keep the temperature of the electrostatic chuck and the wafer at the set temperature.
Preferably, in the step S02, the reflection process is to use the reflective coating to reflect the light of the heating device and then focus the light on the wafer and distribute the light evenly on the wafer.
Preferably, in step S02, a reflection device is used to perform the reflection process, and before the reflection process, an adjustment process is further included, specifically: firstly, adjusting the position or the angle of the reflecting device to align the central position of the reflecting device with the central position of the wafer; then, the reflecting device reflects the light of the heating device and then gathers the light on the wafer and evenly distributes the light on the wafer.
Preferably, in step S02, the adjusting process controls the position or the angle of the reflecting device by using a position adjusting device.
Preferably, in the step S02, in the adjusting process, the edge of the reflection device and the edge of the electrostatic chuck have four protrusions, and center lines of the four protrusions of the reflection device are aligned with center lines of the four protrusions of the electrostatic chuck or straight lines where scale lines of the electrostatic chuck are located.
Preferably, in step S02, the reflection device includes a light emitting device, and in the adjusting, the light emitting device of the reflection device is turned on to align a center position of a horizontal projection of the reflection device on the wafer with a center position of the wafer.
Preferably, the reflecting device is a reflecting cover.
Preferably, the heating device is an infrared heater.
The invention discloses a plasma etching chamber for controlling wafer temperature and a method thereof, wherein a heating device in the prior art is improved into: a reflecting device such as a reflecting cover is arranged between the heating device and the upper electrode, or a reflecting coating is coated on the inner surface of the heating device opposite to the upper electrode, so that the light of the heating device can be converged on the wafer and uniformly distributed on the surface of the wafer, the utilization rate of heat of the heating device is improved, and the heat utilization rate of the heating device and the uniform distribution of the heat on the surface of the wafer can be further improved by adjusting the position or the angle of the reflecting cover; and the temperature of the surface of the wafer is further accurately controlled by utilizing a coolant circulating device below the electrostatic chuck, so that the temperature of the wafer is well controlled, the heat utilization rate of the heating device is improved, and the cavity is simple in structure and easy to maintain.
Drawings
FIG. 1 is a schematic partial cross-sectional view of a prior art processing chamber
FIG. 2 is a schematic partial cross-sectional view of a plasma etch chamber with wafer temperature control according to one embodiment of the present invention
FIG. 3 is a flow chart illustrating a method for controlling wafer temperature according to a preferred embodiment of the invention
FIG. 4 is a schematic partial cross-sectional view of a plasma etch chamber with wafer temperature control according to another preferred embodiment of the invention
FIG. 5 is a flow chart illustrating a method for controlling wafer temperature according to another preferred embodiment of the present invention
Detailed Description
Embodiments that embody features and advantages of the invention are described in detail in the description that follows. It is understood that the invention is capable of modification in various forms and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.
In the manufacture of semiconductors, the wet etching and the dry etching are divided, and the dry etching is to place a processed substrate in plasma, react to generate gaseous substances under the bombardment of corrosive ions with certain energy, and remove an etched film. At present, the commonly used technologies such as Inductively Coupled Plasma (ICP), voltage-variable coupled plasma (TCP), and Capacitively Coupled Plasma (CCP) etching are ideal dry etching technologies because of the advantages of independent control of ion density and ion energy. The present invention employs plasma generators with separate plasma source power and bias power, and all decoupled plasma generators, such as ICP, TCP, CCP, etc. described above, can be applied in the present invention.
A plasma etching chamber and a method for controlling wafer temperature according to the present invention will be described in further detail with reference to fig. 2-5. It is to be noted that the drawings are designed in a simplified form and to use non-precise proportions, and are provided solely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Example 1
Referring to fig. 2, fig. 2 is a schematic partial sectional structure diagram of a plasma etching chamber for controlling wafer temperature according to a preferred embodiment of the present invention, and the structure of the plasma etching chamber includes: the device comprises an upper electrode 1 connected with a grounding wire, a lower electrode 6 connected with a radio frequency source and an electrostatic chuck 5 positioned between the upper electrode and the lower electrode, wherein a quartz window 2 is arranged below the upper electrode 1, a heating device 3 is arranged between the quartz window 2 and the upper electrode 1, and a coolant circulating device 8 is arranged inside the electrostatic chuck 5; in the present invention, a reflection device may be disposed between the heating device and the upper electrode, or a reflection coating may be coated on an inner surface of the heating device opposite to the upper electrode or an inner surface of a side surface of the heating device opposite to the upper electrode, in this embodiment, the inner surface of the heating device 3 opposite to the upper electrode 1 and the inner surface of the side surface are both coated with the reflection coating 4, as shown by a dotted line in fig. 2, the dotted line indicates a boundary path of light reflected by the reflection coating 4, and the reflection coating 4 may reflect light emitted from the heating device 3 at the rear side and the side surface, so that the light is condensed on the wafer 7, thereby improving the heat utilization rate, reducing the heat loss, and performing a function of distributing the light more uniformly on the surface of the wafer 7 due to a larger area of the reflection. The material of the reflective coating 4 may be any material that is free of metal components, has corrosion resistance, and has high stability. Since the infrared heating device not only has higher heating efficiency, but also can avoid adverse effects of ultraviolet irradiation on semiconductor devices or photoresist, such as denaturation of some insulating layers and photoresist, and the like, the heating device 3 can be an infrared heater, such as a near infrared heater, a far infrared heater, and the like; the heating device 3 can be, but is not limited to, a single-point circular heating lamp, a multi-point annular heating lamp, a spiral heating lamp, or a zigzag heating lamp or a special-shaped tube. The heating device 3 is also connected with a power adjusting device for adjusting and controlling the heating temperature of the heating device to the wafer; the coolant circulation device 8 may be, but is not limited to, a coolant circulation pipe, which enters from one end of the electrostatic chuck 5 and exits from the other end, for controlling the temperature of the wafer 7 to be too high, and cooperates with the heating device 3 to achieve the purpose of controlling the temperature of the wafer 7. It can be seen that, compared with the existing etching chamber, the etching chamber of the embodiment of the invention not only can improve the heat utilization rate, but also has simple structure and is easy to maintain.
Referring to fig. 3, fig. 3 is a schematic flow chart illustrating a method for controlling a wafer temperature according to the present embodiment, and as shown in fig. 3, the method for controlling a wafer temperature according to the present invention includes:
step S01: loading the wafer onto an electrostatic chuck of an etching chamber;
step S02: starting a heating device, adjusting the power adjusting device of the heating device, and setting the temperature to heat the wafer;
step S03: the light rays of the heating device are gathered on the wafer and are uniformly distributed on the wafer through the reflection process; here, the reflection process is to use a reflective coating to reflect the light of the heating device and then focus the light on the wafer and distribute the light uniformly on the wafer. The heating temperature of the wafer is set by adjusting the power adjusting device, and the method can be used for controlling the temperature of the wafer under different plasma etching conditions. The heating device may be an infrared heating device, such as a near infrared heater, a far infrared heater, etc., and the heating device may be, but not limited to, a single-point circular heating lamp, a multi-point annular heating lamp, a spiral heating lamp, or a zigzag heating lamp or a special-shaped tube.
Because the inner surface of the heating device opposite to the upper electrode and the inner surface of the side surface are coated with the reflective coating, for example, the heating device is a multipoint annular heating lamp tube and generates infrared radiation heating, the reflective coating can prevent heat generated by the heating device from being dissipated from the rear side of the heating device, and the heat generated by the heating device can be collected and gathered on the wafer by utilizing the reflective coating, so that the heat utilization rate of the heating device is improved, and the heat can be uniformly distributed on the wafer through large-area reflection of the reflective coating. Here, compared with the heating device of the reaction chamber shown in fig. 1, the present embodiment of the invention can achieve the purpose of uniform temperature distribution on the surface of the wafer by using one heating device and using the reflective layer, and improve the energy utilization rate and save the energy consumption.
Step S03: and turning on a coolant circulating device to keep the temperature of the electrostatic chuck and the wafer at the set temperature. Because the coolant circulating device is arranged inside the electrostatic chuck, coolant such as water and the like can flow in from one end of the coolant circulating device and flow out from the other end of the coolant circulating device, in the process, due to the circulating cooling of the coolant, if the temperature of the electrostatic chuck is too high, the heat of the electrostatic chuck can be taken away by the coolant circulating system, so that the temperature of the electrostatic chuck is kept near a set temperature table, when the temperature of the wafer is higher than that of the electrostatic chuck, because the temperature of the electrostatic chuck is lower than that of the wafer, part of the heat of the wafer is transferred to the electrostatic chuck and then transferred to the coolant circulating system by the electrostatic chuck, and the circulation is carried out, so that the temperature of the wafer is not too.
Example 2
Referring to fig. 4, fig. 4 is a schematic partial sectional structure diagram of a plasma etching chamber for controlling wafer temperature according to another preferred embodiment of the present invention, the structure of the plasma etching chamber includes: the device comprises an upper electrode 1 'connected with a grounding wire, a lower electrode 6' connected with a radio frequency source, and an electrostatic chuck 5 'positioned between the upper electrode and the lower electrode, wherein a quartz window 2' is arranged below the upper electrode 1 ', a heating device 3' is arranged between the quartz window 2 'and the upper electrode 1', and a coolant circulating device 8 'is arranged inside the electrostatic chuck 5'; in the present invention, a reflective device may be disposed between the heating device and the upper electrode, or a reflective coating may be applied to an inner surface or a side surface of the heating device opposite to the upper electrode 1 ', in this embodiment, a reflective device may be disposed between the heating device 3' and the upper electrode 1 ', and in this embodiment, the present invention will be described by using the reflective cover 4' as the reflective device, but this is not intended to limit the scope of the present invention. The bowl 4' can be rotated at any angle or moved in a horizontal or vertical direction. In this embodiment, the cross section of the reflector 4' may be, but is not limited to, an arc shape, and the horizontal projection plane may be, but is not limited to, a circle shape.
In this embodiment, the movable device can be fixed by a fixing device, but not limited thereto, wherein the fixing device can be, but not limited to, a fixed shaft, which can be, but not limited to, fixed on the upper electrode 1 ', or fixed at other positions of the plasma etching chamber, such as the heating device 3', etc., and the movable device is mounted on the fixing device, and the mounting method can be, but not limited to, bolt fixing. The reflection housing 4' is connected to a movable device, which is connected to a position regulator.
The position regulator controls the movable device to rotate at any angle or move along the horizontal or vertical direction, so that the reflector 4 'can be driven to rotate at any angle in the horizontal plane by taking the vertical line of the movable device as an axis, or move along the horizontal or vertical direction, for example, the movable device is controlled to rotate at a certain angle through the position regulator and then moves downwards for a certain distance, so that the reflector 4' is driven to do the same motion. Here, the movable means may be attached to the central position of the reflection housing 4 ', and then the vertical line on which the central position of the reflection housing 4' is located may be the symmetry axis of the reflection housing 4 ', along which the reflection housing 4' may be rotated.
In this embodiment, the reflection housing 4 'can rotate at any angle and can move in the horizontal or vertical direction, so that the position and angle of the reflection housing 4' can be adjusted to align the center position of the reflection housing 4 'with the center position of the wafer 7', thereby more effectively collecting the heat emitted from the heating device 3 'and uniformly distributing the light on the surface of the wafer 7'.
In this embodiment, the edge of the reflection housing 4 'is provided with auxiliary marks, preferably, the auxiliary marks on the edge of the reflection housing 4' are marked with graduation lines, or the edge of the reflection housing 4 'is provided with four protrusions which divide the edge of the reflection housing 4' into four equal parts. The outer side surface of the electrostatic chuck 5 'is provided with an auxiliary mark, for example, the outer side surface of the electrostatic chuck 5' is provided with a scale, since the wafer is placed on the electrostatic chuck, the center position of the wafer corresponds to the center position of the electrostatic chuck, the center of the electrostatic chuck is aligned with the center of the reflecting cover, that is, the center of the electrostatic chuck is aligned with the center of the reflecting cover, for example, the scale on the outer side surface of the electrostatic chuck 5 'is provided with four zero marks, the intersection of the straight lines of the four zero marks is aligned with the center of the wafer, the central lines of the four protrusions of the reflecting cover 4' are aligned with the straight lines of the four zero marks on the outer side surface of the electrostatic chuck 5 'one by one, and according to the cross center alignment principle, the center position of the reflecting cover 4' is equal to the center position of the wafer; for another example, the auxiliary mark on the outer surface of the electrostatic chuck 5 ' may be four protrusions, and the center lines of the four protrusions equally divide the circumference of the wafer, so that the intersection point of the center lines of the four protrusions is aligned with the center of the wafer, and the center lines of the four protrusions of the electrostatic chuck 5 ' are aligned with the center lines of the four protrusions of the reflective cover 4 ', that is, the center position of the reflective cover 7 ' of the wafer is aligned with the center position of the reflective cover 4 '.
In this embodiment, the reflective cover 4' further includes an upper layer and a lower layer, and a light emitting device is disposed between the upper layer and the lower layer. The area of the horizontal projection of the reflection cover 4 'on the wafer 7' is equal to or larger than the horizontal cross-sectional area of the heating device, and the reflection cover 4 'may be, but not limited to, curved, and the curvature thereof may be set according to the shape of the heating device 3', so that the reflection cover 4 'can collect the heat of the other emitting surfaces of the heating device except the heat of the side facing the quartz window 2' and accumulate on the wafer 7 ', as shown by the dotted line in fig. 4, which indicates the boundary path of the light reflected by the reflection cover 4'. The reflecting cover 4 'can move, and the position of the reflecting cover 4' can be moved to adjust and align the reflecting cover to cover the heating device, so that the heat utilization rate is improved, and the area of the reflecting cover 4 'is large, so that the emitting area is large, the light distribution effect is realized, and the heat can be uniformly distributed on the wafer 7'.
In this embodiment, the inner surface of the reflector is coated with a reflective coating, and the material of the reflector is an inorganic non-metallic material, preferably, the material of the reflector can be resin or glass, because in the plasma etching chamber, if the reflector is a metallic material, the metallic material affects the electromagnetic field distribution in the reaction chamber. The reflective coating on the inner surface of the reflector may be transparent or translucent or opaque. In this embodiment, since the infrared heating device not only has high heating efficiency, but also can avoid adverse effects of ultraviolet irradiation on the semiconductor device or the photoresist, such as denaturation of some insulating layers and the photoresist, the heating device 3' can adopt an infrared heater, such as a near infrared heater, a far infrared heater, etc.; the heating device 3' can be, but is not limited to, a single-point circular heating lamp tube, a multi-point annular heating lamp tube, a spiral heating lamp tube, or a zigzag heating lamp tube or a special-shaped tube. The heating device 3 ' is also connected with a power adjusting device for adjusting and controlling the heating temperature of the heating device 3 ' to the wafer 7 '; the coolant circulation device 8 ' may be, but is not limited to, a coolant circulation pipe, which enters from one end of the electrostatic chuck 5 ' and exits from the other end thereof, for controlling the temperature of the wafer 7 ' to be too high, and cooperates with the heating device 3 ' to achieve the purpose of controlling the temperature of the wafer 7 '. It can be seen that, compared with the existing etching chamber, the etching chamber of the embodiment of the invention not only can improve the heat utilization rate, but also has simple structure and is easy to maintain.
Referring to fig. 5, fig. 5 is a schematic flow chart illustrating a method for controlling a wafer temperature according to the present embodiment, as shown in fig. 3, the method for controlling a wafer temperature according to the present invention includes:
step S01: loading the wafer onto an electrostatic chuck of an etching chamber;
step S02: starting the heating device, adjusting a power adjusting device of the heating device, and setting the temperature to heat the wafer;
step S03: after the adjustment process, the angle and the position of the reflecting cover are adjusted through the position adjusting device, so that the central position of the reflecting cover is aligned with the central position of the wafer; for precise alignment purposes, a reflector with auxiliary markings on its edge may be used, preferably with a graduation mark on the edge of the reflector or with four protrusions that bisect the edge of the reflector, the intersection of the centerlines of the four protrusions being aligned with the center of the reflector.
The center of the wafer is arranged on the electrostatic chuck, the center of the wafer corresponds to the center of the electrostatic chuck, the center of the electrostatic chuck is aligned with the center of the reflector, namely the center of the electrostatic chuck is aligned with the center of the reflector, for example, the scale on the outer surface of the electrostatic chuck is provided with four zero marks, the intersection points of the straight lines of the four zero marks are aligned with the center of the wafer, the central lines of the four bulges of the reflector are aligned with the straight lines of the four zero marks on the outer surface of the electrostatic chuck one by one, and according to the cross center alignment principle, the center of the reflector is aligned with the center of the wafer; for another example, the auxiliary mark on the outer surface of the electrostatic chuck may be four protrusions, and the center lines of the four protrusions equally divide the circumference of the wafer, so that the intersection point of the center lines of the four protrusions is aligned with the center of the wafer, and aligning the center lines of the four protrusions of the electrostatic chuck with the center lines of the four protrusions of the reflective cover is equivalent to aligning the center position of the reflective cover of the wafer with the center position of the reflective cover.
In this embodiment, the reflection cover includes an upper layer and a lower layer, a light emitting device is disposed between the upper layer and the lower layer, the light emitting device is turned on during adjustment, if the reflection cover has a reflection coating in an opaque or translucent state, a horizontal projection of the reflection cover falls on a wafer, and an angle and a position of the reflection cover are adjusted by the position adjusting device to align a center of the horizontal projection of the reflection cover with a center of the wafer.
Step S04: the light rays of the heating device are gathered on the wafer and are uniformly distributed on the wafer through the reflection process; here, the reflection process is to adjust the position or angle of the reflection cover, to reflect the light of the heating device and then focus the light on the wafer and distribute the light on the wafer uniformly. The heating device sets the heating temperature of the wafer by adjusting the power adjusting device, and can be used for controlling the temperature of the wafer under different plasma etching conditions.
Because the bowl is connected with the head, the head is connected with the position control ware, utilize the position control ware can control the position or the angle of head, thereby control the position or the angle of bowl, make the central point of bowl put with the central point of wafer put the alignment, and adjust the bowl and make it cover in the heating device top, can avoid the heat that heating device produced to scatter from the rear side of heating device, utilize this bowl can collect and gather the heat that heating device produced on the wafer, thereby improve heat utilization rate, because the bowl cover is bulky, so its radiating area is also big, played the distribution effect to the ray, consequently can make the heat evenly distributed on the wafer. Here, compared with the heating device of the reaction chamber shown in fig. 1, the present embodiment of the invention can achieve the purpose of uniform temperature distribution on the surface of the wafer by using one heating device and using the movable reflective cover, and improve the energy utilization rate and save the energy consumption.
Step S05: and turning on the cooling agent circulating device to keep the temperature of the electrostatic chuck and the wafer at the set temperature. Because the coolant circulating device is arranged inside the electrostatic chuck, coolant such as water and the like can flow in from one end of the coolant circulating device and flow out from the other end of the coolant circulating device, in the process, due to the circulating cooling of the coolant, if the temperature of the electrostatic chuck is too high, the heat of the electrostatic chuck can be taken away by the coolant circulating system, so that the temperature of the electrostatic chuck is kept near a set temperature table, when the temperature of the wafer is higher than that of the electrostatic chuck, because the temperature of the electrostatic chuck is lower than that of the wafer, part of the heat of the wafer is transferred to the electrostatic chuck and then transferred to the coolant circulating system by the electrostatic chuck, and the circulation is carried out, so that the temperature of the wafer is not too.
According to the plasma etching chamber and the method for controlling the temperature of the wafer, the reflecting device such as the reflecting cover is arranged between the heating device and the upper electrode, or the reflecting coating is coated on the inner surface of the heating device opposite to the upper electrode, so that the light of the heating device can be converged on the wafer and uniformly distributed on the surface of the wafer, the heat utilization rate of the heating device is improved, and the heat utilization rate of the heating device and the uniform distribution of the heat on the surface of the wafer can be further improved by adjusting the position or the angle of the reflecting cover; and the temperature of the surface of the wafer is further accurately controlled by utilizing a coolant circulating device below the electrostatic chuck, so that the temperature of the wafer is well controlled, the heat utilization rate of the heating device is improved, and the cavity is simple in structure and easy to maintain.
The above description is only an embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the present invention.
Claims (30)
1. A plasma etching chamber comprises an upper electrode connected with a grounding wire, a lower electrode connected with a radio frequency source, an electrostatic chuck arranged between the upper electrode and the lower electrode, and a wafer arranged on the electrostatic chuck,
a quartz window is arranged below the upper electrode;
a heating device is arranged between the quartz window and the upper electrode;
a coolant circulating device is arranged in the electrostatic chuck, enters from one end of the electrostatic chuck and is led out from the other end of the electrostatic chuck, and the coolant circulating device is used for controlling the temperature of the wafer; wherein,
a reflecting device is arranged between the heating device and the upper electrode, the cross section of the reflecting device is arc-shaped, and the reflecting device collects the heat emitted by the heating device onto a wafer on the electrostatic chuck; or the inner surface of the side surface of the heating device opposite to the upper electrode is coated with a reflecting coating, and the reflecting coating concentrates the heat emitted by the heating device on a wafer on the electrostatic chuck; the coolant circulation device is used in cooperation with the heating device, the reflecting device or the reflecting coating to control the temperature of the wafer.
2. The plasma etch chamber of claim 1, wherein the reflecting means is a reflective enclosure.
3. The plasma etching chamber of claim 1, wherein the reflecting means is capable of rotating at any angle or moving in a horizontal or vertical direction.
4. The plasma etch chamber of claim 1, wherein a center position of the reflecting means is aligned with a center position of the wafer.
5. The plasma etch chamber of claim 1, wherein the reflecting means has a movable means coupled thereto, the movable means having a position adjuster coupled thereto.
6. The plasma etching chamber of claim 5, wherein the position adjuster controls the movable device to rotate at any angle or move in a horizontal or vertical direction, so as to drive the reflection device to rotate around a vertical center line of the movable device or move in the horizontal or vertical direction.
7. The plasma etching chamber of claim 5, wherein the reflecting means is centrally located in connection with the movable means.
8. The plasma etch chamber of claim 1, wherein an edge of the reflecting means carries an auxiliary mark.
9. The plasma etch chamber of claim 8, wherein the secondary markings of the reflecting means are four bumps or graduations of the edge of the reflecting means, the four bumps bisecting the edge of the reflecting means.
10. The plasma etching chamber of claim 1, wherein the reflecting means comprises an upper layer and a lower layer, and the light emitting means is disposed between the upper layer and the lower layer.
11. The plasma etching chamber of claim 1, wherein the horizontal projection plane of the reflecting means is circular.
12. The plasma etch chamber of claim 1, wherein an inner surface of the reflecting means is coated with a reflective coating.
13. The plasma etch chamber of claim 12, wherein the inner surface reflective coating of the reflective device is transparent or translucent or opaque.
14. The plasma etch chamber of claim 1, wherein the material of the reflecting means is an inorganic non-metallic material.
15. The plasma etching chamber of claim 14, wherein the material of the reflecting means is resin or glass.
16. The plasma etching chamber of claim 1, wherein a horizontal projected area of the reflecting means is equal to or greater than a horizontal cross-sectional area of the heating means.
17. The plasma etching chamber of claim 1, wherein an inner surface of the heating device opposite to the upper electrode and an inner surface of the side surface are coated with a reflective coating.
18. The plasma etch chamber of claim 1, wherein an outside surface of the electrostatic chuck carries auxiliary indicia.
19. The plasma etch chamber of claim 1, wherein the auxiliary markings of the outer side surface of the electrostatic chuck are graduation marks of the outer side surface of the electrostatic chuck.
20. The plasma etch chamber of claim 1, wherein the auxiliary markings of the outer surface of the electrostatic chuck are four protrusions with a centerline bisecting the circumference of the wafer.
21. The plasma etch chamber of claim 1, wherein the heating device is an infrared heater.
22. The plasma etching chamber of claim 1, wherein a power regulating device is coupled to the heating device.
23. A method of controlling wafer temperature using the plasma etch chamber of any of claims 1-22, comprising:
step S01: loading a wafer onto the electrostatic chuck;
step S02: starting the heating device, adjusting the heating device, and setting the temperature to heat the wafer;
step S03: after the reflection process, the light rays of the heating device are gathered on the wafer and are uniformly distributed on the wafer; a reflecting device is arranged between the heating device and the upper electrode, the cross section of the reflecting device is arc-shaped, and the reflecting device collects heat emitted by the heating device onto a wafer on the electrostatic chuck; or the inner surface of the side surface of the heating device opposite to the upper electrode is coated with a reflecting coating, and the reflecting coating concentrates the heat emitted by the heating device on a wafer on the electrostatic chuck;
step S04: turning on the coolant circulating device to keep the temperatures of the electrostatic chuck and the wafer at the set temperature; the coolant circulation device is used in conjunction with the heating device and the reflective device or coating to control the wafer temperature.
24. The method as claimed in claim 23, wherein in step S03, the reflection process is performed by using the reflective coating to reflect the light from the heating device and focus the light on the wafer and distribute the light uniformly on the wafer; the material of the reflective coating is a corrosion resistant material free of metal components.
25. The method as claimed in claim 23, wherein in step S03, the reflection process is performed by using a reflection device, and the adjustment process is further included before the reflection process, specifically: firstly, adjusting the position or the angle of the reflecting device to align the central position of the reflecting device with the central position of the wafer; then, the reflecting device reflects the light of the heating device and then gathers the light on the wafer and evenly distributes the light on the wafer.
26. The method as claimed in claim 25, wherein the adjusting process controls the position or angle of the reflecting device using a position adjusting device in step S03.
27. The method as claimed in claim 25, wherein in the step S03, the adjusting process includes forming four protrusions on the edge of the reflection device and the edge of the electrostatic chuck, and aligning the center lines of the four protrusions of the reflection device with the center lines of the four protrusions of the electrostatic chuck or the scale lines of the electrostatic chuck one by one.
28. The method as claimed in claim 25, 26 or 27, wherein the reflecting device comprises a light emitting device in step S03, and during the adjusting process, the light emitting device of the reflecting device is turned on to align the center position of the horizontal projection of the reflecting device on the wafer with the center position of the wafer.
29. The method as claimed in claim 23, wherein the reflector is a reflective hood.
30. The method of claim 23, wherein the heating device is an infrared heater.
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| CN104377107A (en) * | 2014-09-24 | 2015-02-25 | 上海华力微电子有限公司 | Etching device for SiCoNi etching process |
| CN104900471B (en) * | 2015-04-13 | 2017-04-19 | 上海华力微电子有限公司 | Plasma etching device and method for improving the efficiency of silicon-cobalt-nickel etching |
| CN105040097B (en) * | 2015-06-30 | 2018-05-01 | 上海华力微电子有限公司 | For the chemical vapor deposition process chamber and chemical vapor deposition method of wafer crystal edge |
| CN107305832A (en) * | 2016-04-25 | 2017-10-31 | 中微半导体设备(上海)有限公司 | A kind of semiconductor processing device and the method for handling substrate |
| CN109427668A (en) * | 2017-09-01 | 2019-03-05 | 中芯国际集成电路制造(上海)有限公司 | The manufacturing method of semiconductor device |
| CN108287574A (en) * | 2018-03-29 | 2018-07-17 | 北京创昱科技有限公司 | Temperature-adjusting device and wafer vacuum heating device |
| KR102696209B1 (en) * | 2019-03-20 | 2024-08-20 | 가부시키가이샤 코쿠사이 엘렉트릭 | Substrate processing apparatus, process vessel, reflector and method of manufacturing semiconductor device |
| CN112179661B (en) * | 2020-09-18 | 2022-04-22 | 中国航发四川燃气涡轮研究院 | Heating device for wheel disc test |
| CN114551202A (en) * | 2020-11-25 | 2022-05-27 | 中国科学院微电子研究所 | Electrostatic chuck, processing chamber and semiconductor processing equipment |
| CN112750738B (en) * | 2021-01-18 | 2024-02-23 | 中国电子科技集团公司第四十八研究所 | Ion beam etching equipment and etching method thereof |
| CN113539893A (en) * | 2021-05-11 | 2021-10-22 | 北京北方华创微电子装备有限公司 | Heating device for semiconductor process chamber and semiconductor equipment |
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| CN101231941A (en) * | 2007-01-15 | 2008-07-30 | 应用材料股份有限公司 | Temperature measurement and control of wafer support in thermal processing chamber |
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| JPS59194436A (en) * | 1983-04-20 | 1984-11-05 | Kokusai Electric Co Ltd | Dry etching method and device therefor |
| US6566630B2 (en) * | 2000-04-21 | 2003-05-20 | Tokyo Electron Limited | Thermal processing apparatus for introducing gas between a target object and a cooling unit for cooling the target object |
| JP2010103183A (en) * | 2008-10-21 | 2010-05-06 | Inflidge Kogyo Kk | Light irradiation heating device and light irradiation heating method |
| US8580693B2 (en) * | 2010-08-27 | 2013-11-12 | Applied Materials, Inc. | Temperature enhanced electrostatic chucking in plasma processing apparatus |
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