CN103258757B - The packaging and testing method of quantum effect photoelectronic detecting array and reading circuit - Google Patents
The packaging and testing method of quantum effect photoelectronic detecting array and reading circuit Download PDFInfo
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- CN103258757B CN103258757B CN201310153685.9A CN201310153685A CN103258757B CN 103258757 B CN103258757 B CN 103258757B CN 201310153685 A CN201310153685 A CN 201310153685A CN 103258757 B CN103258757 B CN 103258757B
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- reading circuit
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Abstract
The invention discloses a kind of packaging and testing method of quantum effect photoelectronic detecting array and reading circuit, the photoelectronic detecting array of reading circuit, photoelectronic detecting array or docking reading circuit is characterized in be encapsulated in respectively in base, then base is arranged in the adapter be connected with timing sequence test plate and oscilloscope, controls optical system for testing and performance test is carried out to the device be encapsulated in base; Described adapter is the obturator that base is fixedly connected with cavity.The present invention compared with prior art has convenient test, and whole test process does not have line welding step, effectively can prevent misoperation, reduces electrostatic to the injury of device, reduces package failure, be conducive to the extensive use of novel photoelectric-detection device.
Description
Technical field
The present invention relates to circuit design and optoelectronic integrated technology field, specifically the method for testing of a kind of quantum effect photoelectronic detecting array and reading circuit.
Background technology
At present, the demand that photodetector has been widely used in a large amount of civilian spectrometers such as business, industry and military field, particularly food security, environment and biological monitoring such as meteorology, astronomy, Earthwatch, night vision, navigation, aircraft control, early warning system constantly increases.Except silicon photodetector, CCD, cmos image sensor is unexpected, and the quantum effect compound optoelectronic new unit of sudden emergence is due to its high sensitivity, and device architecture controllable precise, detection wavelength is from ultraviolet until infrared, very long wave, and even terahertz wave band, receives much concern, and progressively will move towards market, wherein, the quantum effect compound semiconductor light electric device test of newly developing is exactly key technology.Because quantum effect compound optoelectronic device is the device that the atom level of careful design and the material of molecular level growth are formed; growth cost costly; silica-based reading circuit is that weak signal numerical model analysis reads; electromagnetic interference signal to external world; electrostatic is more responsive; at assembled package test process, need to carry out reading circuit test respectively and test with photoelectricity integration packaging.
The packaging and testing of the novel quantum effect compound semiconductor light electricity detection array of prior art adopt the method for welding, the input and output side of new unit, reading circuit is welded with testing apparatus line, but line welding each time is all very easy to break device and circuit, welding also can be introduced as parasitic parameters such as resistance, electric capacity and inductance, encapsulation noise is large, signal delay, affect the accuracy of packaging and testing, and the process of test is very loaded down with trivial details, easily there is misoperation and cause electrostatic to the injury of device.
Summary of the invention
The packaging and testing method of a kind of quantum effect photoelectronic detecting array and the reading circuit provided for the deficiencies in the prior art is provided, reading circuit will be encapsulated, the base of the photoelectronic detecting array of photoelectronic detecting array or docking reading circuit is arranged in adapter, different working temperatures is adopted to carry out packaging and testing to photoelectric device, advantage line is apart from designing with feature sizes and shortening signal and power supply/grounding path, reduce encapsulation noise, the loss of signal that minimizing signal delay and parasitic parameter cause, eliminate line welding in test process, effectively prevent misoperation and electrostatic to the injury of device, operating process is simple, convenient, further reduction package failure and manufacturing cost, be conducive to the extensive use of novel photoelectric-detection device.
The object of the present invention is achieved like this: a kind of packaging and testing method of quantum effect photoelectronic detecting array and reading circuit, the photoelectronic detecting array of reading circuit, photoelectronic detecting array or docking reading circuit is characterized in be encapsulated in respectively in base, then base is placed in the adapter be connected with timing sequence test plate and oscilloscope, regulate optical system for testing to carry out performance test to the device be encapsulated in base, concrete test such as following step is carried out:
(1), base encapsulation
By the photoelectronic detecting array of reading circuit, photoelectronic detecting array or docking reading circuit respectively pressure welding on substrate, then by substrate package in the base being provided with probe and euphotic cover plate; Described substrate is PCB substrate, ceramic substrate or the silicon substrate with through-hole structure;
(2), adapter design
Adapter is the obturator that base is fixedly connected with cavity; Described base is provided with Test bench, and Test bench both sides are provided with the Plug pin patch bay that arrange corresponding to base probe; Described cavity is provided with light inlet window, lead-out wire interface, vent valve and the refrigeration mouth of pipe, and lead-out wire interface and Plug pin patch bay adopt to go between and be electrically connected;
(3), test is installed
Be fixedly installed on Test bench by the base of above-mentioned packaging, its base probe and Plug pin patch bay grafting, be then fixedly connected into airtight adapter by cavity and base;
(4), packaging and testing
Above-mentioned adapter is connected with low-light test macro, described low-light test macro comprises optical system for testing, timing sequence test plate and oscilloscope, lead-out wire interface on adapter is connected with timing sequence test plate, timing sequence test plate is connected with oscilloscope, the refrigeration mouth of pipe injects different cold-producing mediums according to the working temperature of tested object, optical system for testing enters adapter by the unthreaded hole of light inlet window, test light is beaten being packaged on the photoelectric device in base, photoelectric device in base by lead-out wire interface be connected oscillographic timing sequence test plate and be connected, by the performance of oscilloscope observation test object.
The present invention compared with prior art has convenient test, whole test process does not have line welding step, effectively can prevent misoperation, reduce electrostatic to the injury of device, signal and power supply/grounding path shorten, and facilitate line-spacing and feature sizes to design, reduce encapsulation noise, the loss of signal that minimizing signal delay and parasitic parameter cause, reduces package failure and manufacturing cost further, is conducive to the extensive use of novel photoelectric-detection device.
Accompanying drawing explanation
Fig. 1 is adaptor structure schematic diagram
Fig. 2 is understructure schematic diagram
Fig. 3 is low-light test macro schematic diagram.
Embodiment
Embodiment 1
For reading circuit test, the present invention is further elaborated in the present invention, and specific operation process is carried out as follows:
(1), base encapsulation
By silica-based reading integrated circuit pressure welding in PCB substrate, then by substrate package in the base being provided with probe and euphotic cover plate, face down post circuit one during encapsulation, so as below docking time conveniently paste device.
(2), adapter design
Accompanying drawings 1 ~ accompanying drawing 2, described adapter 7 is the obturator that base 2 is fixedly connected with cavity 1, base 2 is provided with Test bench 10, Test bench 10 both sides are provided with the two row Plug pin patch bay 8 that arrange corresponding to base probe, cavity 1 is provided with light inlet window 6, two lead-out wire interface 5, the freeze mouth of pipe 4 and vent valve 3, two lead-out wire interface 5 and two row Plug pin patch bay 8 adopt to go between and be electrically connected.
(3), test is installed
Accompanying drawings 2, is fixed on Test bench 10 by the base of above-mentioned packaging by screw 9, and its base probe and Plug pin patch bay 8 grafting, realize base and be connected with the effective of adapter 7, then cavity 1 and base 2 is fixedly connected into airtight adapter 7.
(4), packaging and testing
Accompanying drawings 3, above-mentioned adapter 7 is connected with low-light test macro, described low-light test macro comprises optical system for testing 11, timing sequence test plate 12 and oscilloscope 13, two lead-out wire interfaces 5 on adapter 7 are connected with timing sequence test plate 12, timing sequence test plate 12 is connected with oscilloscope 13, the refrigeration mouth of pipe 4 injects different cold-producing mediums according to the working temperature of tested object and is set to its working temperature, the reading integrated circuit be encapsulated in base is connected with the timing sequence test plate 12 being connected oscilloscope 13 by two lead-out wire interfaces 5, the test performance reading integrated circuit is observed by oscilloscope 13.
Embodiment 2
The present invention is for photoelectronic detecting array device and reading circuit interoperability test, and the present invention is further elaborated, and specific operation process is carried out as follows:
(1), base encapsulation
Test on successful basis at above-mentioned reading circuit, base is taken out, then photoelectronic detecting array is sealed pressure welding in PCB substrate, the court of namely pasting photoelectronic detecting array device, facilitates light beam directly to beat in device window above.
(2), adapter design
Accompanying drawings 1 ~ accompanying drawing 2, described adapter 7 is the obturator that base 2 is fixedly connected with cavity 1, base 2 is provided with Test bench 10, Test bench 10 both sides are provided with the two row Plug pin patch bay 8 that arrange corresponding to base probe, cavity 1 is provided with light inlet window 6, two lead-out wire interface 5, the freeze mouth of pipe 4 and vent valve 3, two lead-out wire interface 5 and two row Plug pin patch bay 8 adopt to go between and be electrically connected.
(3), test is installed
Accompanying drawings 2, is fixed on Test bench 10 by the base of above-mentioned packaging by screw 9, and its base probe and Plug pin patch bay 8 grafting, realize base and be connected with the effective of adapter 7, then cavity 1 and base 2 is fixedly connected into airtight adapter 7.
(4), packaging and testing
Accompanying drawings 3, above-mentioned adapter 7 is connected with low-light test macro, described low-light test macro comprises optical system for testing 11, timing sequence test plate 12 and oscilloscope 13, two lead-out wire interfaces 5 on adapter 7 are connected with timing sequence test plate 12, timing sequence test plate 12 is connected with oscilloscope 13, the refrigeration mouth of pipe 4 injects different cold-producing mediums according to the working temperature of tested object and is set to the working temperature of photoelectronic detecting array, then optical system for testing 11 is regulated and light path control, optical system for testing 11 enters adapter 7 by the unthreaded hole of light inlet window 6, test light is beaten being packaged on the photoelectronic detecting array device in base, the electrical resistivity survey be encapsulated in base is surveyed array device docking reading circuit and is connected with the timing sequence test plate 12 being connected oscilloscope 13 by two lead-out wire interfaces 5, the performance of wave form varies testing photoelectronic detection array device docking reading circuit is observed by oscilloscope 13.
Embodiment 3
The present invention is for photoelectronic detecting array device detection, and the present invention is further elaborated, and specific operation process sequence is carried out as follows:
(1), base encapsulation
By the pressure welding of photoelectronic detecting array device on a silicon substrate, then by substrate package in the base being provided with probe and euphotic cover plate.
(2), adapter design
Accompanying drawings 1 ~ accompanying drawing 2, described adapter 7 is the obturator that base 2 is fixedly connected with cavity 1, base 2 is provided with Test bench 10, Test bench 10 both sides are provided with the two row Plug pin patch bay 8 that arrange corresponding to base probe, cavity 1 is provided with light inlet window 6, two lead-out wire interface 5, the freeze mouth of pipe 4 and vent valve 3, two lead-out wire interface 5 and two row Plug pin patch bay 8 adopt to go between and be electrically connected.
(3), test is installed
Accompanying drawings 2, is fixed on Test bench 10 by the base of above-mentioned packaging by screw 9, and its base probe and Plug pin patch bay 8 grafting, realize base and be connected with the effective of adapter 7, then cavity 1 and base 2 is fixedly connected into airtight adapter 7.
(4), packaging and testing
Accompanying drawings 3, above-mentioned adapter 7 is connected with low-light test macro, described low-light test macro comprises optical system for testing 11, timing sequence test plate 12 and oscilloscope 13, two lead-out wire interfaces 5 on adapter 7 are connected with timing sequence test plate 12, timing sequence test plate 12 is connected with oscilloscope 13, the refrigeration mouth of pipe 4 injects different cold-producing mediums according to the working temperature of tested object and is set to the working temperature of photoelectronic detecting array, then optical system for testing 11 is regulated and light path control, optical system for testing 11 enters adapter 7 by the unthreaded hole of light inlet window 6, test light is beaten and surveys on array device being packaged in the electrical resistivity survey in base, two lead-out wires connect 5 and are connected with the timing sequence test plate 12 being connected oscilloscope 13 by the electrical resistivity survey be encapsulated in base survey array device docking reading circuit, observe wave form varies by oscilloscope 13 can test out photoelectronic detecting array and drawn the performance of pixel or observe the I-V of pixel by performance of semiconductor device tester, the DC characteristic such as C-V.
The present invention is according to the encapsulation tube support of tested object, just can facilitate, flexibly normal temperature or low temperature are carried out to detector under the performance of independent test reading circuit, photo detector array and photoelectric device, line welding step is not had in whole test process, effectively can prevent misoperation, reduce electrostatic to the injury of device.
More than just the present invention is further illustrated, and be not used to limit practicing of this patent, allly implements for the present invention's equivalence, within the right that all should be contained in this patent.
Claims (1)
1. the packaging and testing method of a quantum effect photoelectronic detecting array and reading circuit, the photoelectronic detecting array of reading circuit, photoelectronic detecting array or docking reading circuit is it is characterized in that to be encapsulated in respectively in base, then base is arranged in the adapter be connected with timing sequence test plate and oscilloscope, regulate optical system for testing to carry out performance test to the device be encapsulated in base, concrete test such as following step is carried out:
(1), base encapsulation
By the photoelectronic detecting array of reading circuit, photoelectronic detecting array or docking reading circuit respectively pressure welding on substrate, then by substrate package in the base being provided with probe and euphotic cover plate; Described substrate is PCB substrate, ceramic substrate or the silicon substrate with through-hole structure;
(2), adapter design
Adapter is the obturator that base is fixedly connected with cavity; Described base is provided with Test bench, and Test bench both sides are provided with the Plug pin patch bay that arrange corresponding to base probe; Described cavity is provided with light inlet window, lead-out wire interface, vent valve and the refrigeration mouth of pipe, and lead-out wire interface and Plug pin patch bay adopt to go between and be electrically connected;
(3), test is installed
Be fixedly installed on Test bench by above-mentioned base, its base probe and Plug pin patch bay grafting, be then fixedly connected into airtight adapter by cavity and base;
(4), packaging and testing
Above-mentioned adapter is connected with low-light test macro, described low-light test macro comprises optical system for testing, timing sequence test plate and oscilloscope, lead-out wire interface on adapter is connected with timing sequence test plate, timing sequence test plate is connected with oscilloscope, the refrigeration mouth of pipe injects different cold-producing mediums according to the working temperature of tested object, optical system for testing enters adapter by the unthreaded hole of light inlet window, test light is beaten being packaged on the photoelectric device in base, photoelectric device in base by lead-out wire interface be connected oscillographic timing sequence test plate and be connected, by the performance parameter of oscilloscope observation test object.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310153685.9A CN103258757B (en) | 2013-04-28 | 2013-04-28 | The packaging and testing method of quantum effect photoelectronic detecting array and reading circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310153685.9A CN103258757B (en) | 2013-04-28 | 2013-04-28 | The packaging and testing method of quantum effect photoelectronic detecting array and reading circuit |
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| Publication Number | Publication Date |
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| CN103258757A CN103258757A (en) | 2013-08-21 |
| CN103258757B true CN103258757B (en) | 2015-10-28 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101212125A (en) * | 2006-12-28 | 2008-07-02 | 中国科学院半导体研究所 | Method for quality testing and analysis of tube core of GaAs-based semiconductor quantum dot laser |
| CN102832176A (en) * | 2012-08-29 | 2012-12-19 | 华东师范大学 | Packaging method of quantum effect photoelectric detector and readout integrated circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3097643B2 (en) * | 1998-01-14 | 2000-10-10 | 日本電気株式会社 | Semiconductor device testing method and semiconductor device |
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- 2013-04-28 CN CN201310153685.9A patent/CN103258757B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101212125A (en) * | 2006-12-28 | 2008-07-02 | 中国科学院半导体研究所 | Method for quality testing and analysis of tube core of GaAs-based semiconductor quantum dot laser |
| CN102832176A (en) * | 2012-08-29 | 2012-12-19 | 华东师范大学 | Packaging method of quantum effect photoelectric detector and readout integrated circuit |
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| CN103258757A (en) | 2013-08-21 |
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