CN110361643A - Ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector test macro and method - Google Patents
Ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector test macro and method Download PDFInfo
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- CN110361643A CN110361643A CN201910725457.1A CN201910725457A CN110361643A CN 110361643 A CN110361643 A CN 110361643A CN 201910725457 A CN201910725457 A CN 201910725457A CN 110361643 A CN110361643 A CN 110361643A
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- 238000012360 testing method Methods 0.000 title claims abstract description 86
- 239000002131 composite material Substances 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 230000005669 field effect Effects 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims description 11
- 230000001105 regulatory effect Effects 0.000 claims abstract description 20
- 238000001514 detection method Methods 0.000 claims abstract description 5
- 239000000523 sample Substances 0.000 claims description 28
- 239000013307 optical fiber Substances 0.000 claims description 20
- 230000008878 coupling Effects 0.000 claims description 13
- 238000010168 coupling process Methods 0.000 claims description 13
- 238000005859 coupling reaction Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 10
- 229910052724 xenon Inorganic materials 0.000 claims description 10
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 8
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- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000002776 aggregation Effects 0.000 claims description 3
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- 239000000835 fiber Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 2
- 238000004891 communication Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
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- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
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Abstract
The present invention relates to wafer On-wafer measurement technical fields, especially a kind of ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector test macro, including Wafer Probe platform, test measuring instrumentss, light source occurs and regulating system, system automatically controls and data processing software, Wafer Probe platform is used to that part to be measured to be fixed and test operation, test measuring instrumentss are connect with part to be measured, for carrying out Data Detection and collection to part to be measured, light source occurs and regulating system is for issuing testing light source to wafer part to be measured, output for carrying out testing light source to part to be measured controls, system automatically controls and data processing software occurs respectively with Wafer Probe platform and light source and regulating system communicates to connect, present invention greatly enhances the tests of ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector to imitate Rate, encapsulation yield, improve production efficiency, reduce production cost.
Description
Technical field
The present invention relates to wafer On-wafer measurement technical field, specific field is a kind of ultraviolet-visible photosensitive composite dielectric gate
MOSFET detector test system.
Background technique
The basic structure of each unit of photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector is in substrate p-type semiconductor material
The two sides of side are equipped with N-type semiconductor area and constitute source electrode and drain electrode, are respectively equipped with two layers of insulating dielectric materials and control right above substrate
Grid processed is equipped with photoelectron accumulation layer between two layers of insulating dielectric materials；It is with the second dielectric for controlling gate contact
The charge loss that stores in photoelectron accumulation layer is prevented to arrive the material of grid, source-drain electrode is arrived collecting photoelectron and store photoelectron
It is hanging structure when photoelectron storage layer；First dielectric, that is, underlying dielectric, using silica, the high dielectric of Si0N or other
Constant medium；The material of second insulating medium layer, that is, top layer medium, using silicon oxide/silicon nitride/silicon oxide, silica, oxidation
Aluminium or other high dielectric constant materials；And at basal layer or grid face at least one for detector detect wavelength it is transparent or
Translucent window.
Test for ultraviolet-visible photosensitive compound medium grid MOSFET, in the prior art, usually first by its envelope
After the completion of dress, reconnects test macro and tested；
Since wafer production yield is unable to reach 100%, so if all chips all packaged re-tests of elder generation can be incited somebody to action
Bad sample is also encapsulated, this will lead to the increase of workload, and the increase of production cost also will seriously affect production effect
Rate.In order to just screen the performance and grade of device before packaging, testing efficiency is improved, yields is improved, for UV, visible light
The test of light photosensitive compound medium grid MOSFET, the wafer On-wafer measurement for needing set of system to realize.Wafer level is surveyed in piece
Difficult point of the test system in building compared to encapsulation level-systems is that the light source that it not only needs to complete is generated, modulates and conducted
Device, with greater need for design complete method realize the automatic coupling in wafer level, automatic test, the automatic upload process of data,
Product hierarchy divides automatically.
Summary of the invention
The purpose of the present invention is to provide a kind of ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector test macro,
To solve the problem of that detector chip testing efficiency is not high in the prior art and the high high production cost of workload.
To achieve the above object, the invention provides the following technical scheme: a kind of ultraviolet-visible photosensitive composite dielectric gate
MOSFET detector test system, including Wafer Probe platform, test measuring instrumentss, light source occur and regulating system, are
System automatically controls and data processing software, and the Wafer Probe platform is used to that part to be measured to be fixed and test operation, institute
It states test measuring instrumentss to connect with part to be measured, for carrying out Data Detection and collection to part to be measured, the light source occurs and adjusts
Section system is for issuing testing light source to wafer part to be measured, and the output for carrying out testing light source to part to be measured controls, the system
System automatically controls and data processing software occurs respectively with Wafer Probe platform and light source and regulating system communicates to connect, and leads to
Cross system automatically control and data processing software carry out relevant parameter setting and circle test probe station and light source occur and
The specific manipulation of regulating system.
Preferably, the Wafer Probe platform is that test platform is arranged in electricity probe and optical probe, and part to be measured is fixed
In on test platform, electrically or optically signal is carried out to part to be measured by electricity probe and optical probe and is motivated, and collects correspondence
Electrically or optically feedback signal information.
Preferably, the light source occurs and regulating system includes xenon source, condenser system, chopper, monochromator, light
Fine, calibration diode, light shield system, the light source that xenon source generates are assembled by condenser system, and chopper is to aggregation
Light source carry out frequency adjusting, monochromator and chopper cooperate, and carry out the light source filtering of specific wavelength simultaneously to the light source after adjusting
Output, the light source of output are transmitted through the fiber in light shield system, and light shield system and Wafer Probe platform are mechanical solid
The light source of output is first exposed to calibration diode and carries out system calibration, then the light source of output is exposed to part to be measured by fixed connection
On tested.
To achieve the above object, the present invention also provides following technical solutions: a kind of ultraviolet-visible photosensitive composite dielectric gate
MOSFET detector test system and application method, the steps include:
(1) when the work of test whole system, multiband is first generated by the xenon source in light source generation and regulating system
Light；
(2) light issued pools small spot by condenser system, is conducted by light path system to chopper；
(3) it is subsequently conducted in monochromator, is automatically controlled by system and data processing software sends commands to monochromator,
So that it exports the light of specific wavelength into optical fiber by internal regulation；
(4) it is first introduced light on the calibration diode being placed in light shield system by optical fiber, it is then automatic in system
The calibration of control and the lower data for obtaining calibration diode of data processing software control as reference data, for system；
(5) it introduces light into be placed in light shield system again by optical fiber and be fixed on wafer and the fixed device of part to be measured
Ultraviolet-visible photosensitive compound medium grid MOSFET to be measured；
(6) then in the case where system automatically controls and data processing software controls, optical fiber probe space is mobile controls and couples dress
It sets control optical fiber and carries out automatic optical coupling at the photosurface of device under test, read coupling value by test measuring instrumentss, lead to
It crosses system automatic control and data processing software judges whether coupling result is optimal；
(7) after the completion of to be coupled, system is automatically controlled and data processing software can control as needed monochromator and successively produce
The monochromatic light of a raw wavelength range, the photoelectric current being then successively read by control test measuring instrumentss under Different lightwave length
Response；
(8) then system automatically controls and data processing software can integrate wavelength and photocurrent response value, formation currently to
Survey the wavelength and photoresponse map of device；
(9) after the completion of currently testing device under test test, system is automatically controlled and data processing software control wafer is surveyed
Examination probe station is moved at next device under test, above procedure is repeated, until devices all on wafer test completion；
(10) final system automatically controls and data processing software can arrange all data of current wafer, forms corresponding parameter
Polar plot, and judge yields.
Compared with prior art, the beneficial effects of the present invention are: ultraviolet-visible photosensitive composite dielectric gate of the present invention
MOSFET detector wafer is tested in measuring system comprising wafer in piece in sheet laser generation or mediation system, automatic coupling automatically
System, automatic control system is, it can be achieved that ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector wafer is tested automatically in piece
Measuring system greatly improves ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector testing efficiency, encapsulation yield, mentions
High production efficiency, reduces production cost.
Detailed description of the invention
Fig. 1 is system principle diagram of the invention；
Fig. 2 is light source equipment connection schematic diagram of the invention；
Fig. 3 is that light-source system of the invention builds schematic diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of technical solution: a kind of ultraviolet-visible photosensitive compound medium grid MOSFET spy
Device test macro is surveyed, including Wafer Probe platform, test measuring instrumentss, light source generation and regulating system, system are controlled automatically
System and data processing software, the Wafer Probe platform is used to that part to be measured to be fixed and test operation, and the test is surveyed
Amount instrument is connect with part to be measured, and for carrying out Data Detection and collection to part to be measured, the light source occurs and regulating system is used
In issuing testing light source to wafer part to be measured, the output for carrying out testing light source to part to be measured is controlled, and the system is controlled automatically
System and data processing software are communicated to connect with Wafer Probe platform and light source generation and regulating system respectively, certainly by system
Dynamic control and data processing software carry out the setting of relevant parameter and circle tests probe station and light source occurs and regulating system
Specific manipulation, simultaneity factor automatically controls and data processing software is integrated with test macro, system automatically control and data at
Reason software is connect with test measuring instrumentss, can be collected to the data of test measuring instrumentss detection and integration is handled, test
Measuring instrumentss are wafer electrical testing instrument.
The Wafer Probe platform is electricity probe and test platform is arranged in optical probe, and it is flat that part to be measured is fixed on test
On platform, part to be measured is tested by electricity probe and optical probe, Wafer Probe platform includes Wafer Probe platform
The fixed device of mobile device, wafer and part to be measured, electricity probe unit, electricity probe space mobile controller, probe station are anti-
Vibrational system, vacuum pump or vacuum pipe device, air compressor machine or compressed air pipe device, the mobile control in optical fiber probe space with
Coupling device.
As Figure 2-3, the light source occurs and regulating system includes xenon source, condenser system, chopper, monochrome
Instrument, optical fiber, calibration diode, light shield system, the light source that xenon source generates are assembled by condenser system, chopper pair
The light source of aggregation carries out frequency adjusting, and monochromator and chopper cooperate, and the light source mistake of specific wavelength is carried out to the light source after adjusting
It filters and exports, the light source of output is transmitted through the fiber in light shield system, and light shield system and Wafer Probe platform are machine
Tool is fixedly connected, by the light source of output first expose to calibration diode carry out system calibration, then by the light source of output expose to
It surveys on part and is tested.
Xenon source, spectral region are 185nm -2500nm；Condenser system, minimum convergence spot diameter be less than etc.
In 5 microns, optical axis adjustable extent is 20 millimeters；Chopper, frequency-tuning range kHz from 10 hertz to 24 is optional,
The copped wave piece of configuration is handled by photochemistry and demagnetization；Monochromator, focal length are 260 millimeters, aperture size 3.9, wavelength model
Enclosing is 200 nanometers to 2500 nanometers, and wavelength accuracy is 0.35 nanometer, and wavelength resolution is 0.1 nanometer, 0.2 millimeter of slit width
It is adjustable to 3 millimeters；Optical fiber is multimode UV Silica Optical Fibers, and numerical aperture is 0.22 ± 0.02, and light wave transmissions range is received for 190
Rice is to 1900 nanometers；Diode is calibrated, spectral response range is 190 nanometers to 1100 nanometers, and illumination sensitivity representative value is
0.5 ampere/Vata, responsiveness peak wavelength is 960 nanometers, minimum 50 pico-ampere of dark current；Light shield system, 0.5GHz~
Its electromagnetic shielding representative value is more than or equal to 20dB, the light for wavelength at 200 nanometers to 1100 nanometers, light within the scope of 20GHz
Screening ability is more than or equal to 120dB.
A kind of ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector test macro and application method, the steps include:
(1) when the work of test whole system, multiband is first generated by the xenon source in light source generation and regulating system
Light；
(2) light issued pools small spot by condenser system, is conducted by light path system to chopper；
(3) it is subsequently conducted in monochromator, is automatically controlled by system and data processing software sends commands to monochromator,
So that it exports the light of specific wavelength into optical fiber by internal regulation；
(4) it is first introduced light on the calibration diode being placed in light shield system by optical fiber, it is then automatic in system
The calibration of control and the lower data for obtaining calibration diode of data processing software control as reference data, for system；
(5) it introduces light into be placed in light shield system again by optical fiber and be fixed on wafer and the fixed device of part to be measured
Ultraviolet-visible photosensitive compound medium grid MOSFET to be measured；
(6) then in the case where system automatically controls and data processing software controls, optical fiber probe space is mobile controls and couples dress
It sets control optical fiber and carries out automatic optical coupling at the photosurface of device under test, read coupling value by test measuring instrumentss, lead to
It crosses system automatic control and data processing software judges whether coupling result is optimal；
(7) after the completion of to be coupled, system is automatically controlled and data processing software can control as needed monochromator and successively produce
The monochromatic light of a raw wavelength range, the photoelectric current being then successively read by control test measuring instrumentss under Different lightwave length
Response；
(8) then system automatically controls and data processing software can integrate wavelength and photocurrent response value, formation currently to
Survey the wavelength and photoresponse map of device；
(9) after the completion of currently testing device under test test, system is automatically controlled and data processing software control wafer is surveyed
Examination probe station is moved at next device under test, above procedure is repeated, until devices all on wafer test completion；
(10) final system automatically controls and data processing software can arrange all data of current wafer, forms corresponding parameter
Polar plot, and judge yields.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (4)
1. a kind of ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector test macro, it is characterised in that: surveyed including wafer
Try probe station, test measuring instrumentss, light source occurs and regulating system, system automatic control and data processing software, the crystalline substance
Circle test probe station is used to that part to be measured to be fixed and test operation, the test measuring instrumentss connect with part to be measured, are used for
Data Detection and collection are carried out to part to be measured, the light source occurs and regulating system is to be measured to wafer for issuing testing light source
Part, the output for carrying out testing light source to part to be measured control, the system automatically control and data processing software respectively with crystalline substance
Circle test probe station and light source occur and regulating system communication connection, is automatically controlled by system and data processing software carries out
The setting of relevant parameter and circle test probe station and light source generation and the specific manipulation of regulating system.
2. ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector test macro according to claim 1, feature
Be: the Wafer Probe platform is that test platform is arranged in electricity probe and optical probe, and part to be measured is fixed on test platform
On, electrically or optically signal is carried out to part to be measured by electricity probe and optical probe and is motivated, and collects and corresponds to electrically or optically
Feedback signal information.
3. ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector test macro according to claim 1, feature
Be: the light source occurs and regulating system includes xenon source, condenser system, chopper, monochromator, optical fiber, calibration two
Pole pipe, light shield system, the light source that xenon source generates are assembled by condenser system, and chopper carries out the light source of aggregation
Frequency is adjusted, and monochromator and chopper cooperate, and the light source that the light source after adjusting carries out specific wavelength is filtered and exported, output
Light source is transmitted through the fiber in light shield system, and light shield system is to be mechanically fixed to connect with Wafer Probe platform, will be defeated
Light source out first exposes to calibration diode and carries out system calibration, then the light source of output is exposed on part to be measured and is tested.
4. a kind of ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector test macro and application method, it is characterised in that:
It the steps include:
(1) when the work of test whole system, multiwave light is first generated by the xenon source in light source generation and regulating system；
(2) light issued pools small spot by condenser system, is conducted by light path system to chopper；
(3) it is subsequently conducted in monochromator, is automatically controlled by system and data processing software sends commands to monochromator, so that
It exports the light of specific wavelength into optical fiber by internal regulation；
(4) it is first introduced light on the calibration diode being placed in light shield system by optical fiber, is then automatically controlled in system
And calibration of the lower data for obtaining calibration diode of data processing software control as reference data, for system；
(5) introduced light into again by optical fiber be placed in light shield system be fixed on it is to be measured on the fixed device of wafer and part to be measured
Ultraviolet-visible photosensitive compound medium grid MOSFET；
(6) the then mobile control in optical fiber probe space and coupling device control in the case where system automatically controls and data processing software controls
Optical fiber processed carries out automatic optical coupling at the photosurface of device under test, by test measuring instrumentss to read coupling value, passes through and is
System automatically controls and data processing software judges whether coupling result is optimal；
(7) after the completion of to be coupled, system is automatically controlled and data processing software can control as needed monochromator and be sequentially generated one
The monochromatic light of wavelength range, the photocurrent response being then successively read by control test measuring instrumentss under Different lightwave length
Value；
(8) then system automatically controls and data processing software can integrate wavelength and photocurrent response value, forms current device to be measured
The wavelength and photoresponse map of part；
(9) after the completion of currently testing device under test test, system is automatically controlled and data processing software control wafer test is visited
Needle platform is moved at next device under test, above procedure is repeated, until devices all on wafer test completion；
(10) final system automatically controls and data processing software can arrange all data of current wafer, forms corresponding parameter vector
Figure, and judge yields.
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| CN110967111A (en) * | 2019-11-15 | 2020-04-07 | 中山大学 | Spectral response calibration system and test method of vacuum ultraviolet light detector |
| CN111081809A (en) * | 2019-12-23 | 2020-04-28 | 中山大学 | High-sensitivity X-ray detector |
| CN113341365A (en) * | 2021-05-31 | 2021-09-03 | 安徽南瑞中天电力电子有限公司 | Method, system and device for processing protocol layer data of intelligent electric energy meter |
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