CN103257498A - Pixel structure, driving method thereof and display device thereof - Google Patents
Pixel structure, driving method thereof and display device thereof Download PDFInfo
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- CN103257498A CN103257498A CN201310164041XA CN201310164041A CN103257498A CN 103257498 A CN103257498 A CN 103257498A CN 201310164041X A CN201310164041X A CN 201310164041XA CN 201310164041 A CN201310164041 A CN 201310164041A CN 103257498 A CN103257498 A CN 103257498A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136272—Auxiliary lines
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0219—Reducing feedthrough effects in active matrix panels, i.e. voltage changes on the scan electrode influencing the pixel voltage due to capacitive coupling
Abstract
The invention discloses a pixel structure, a driving method of the pixel structure and a display device of the pixel structure, and relates to the technical field of display. The pixel structure is used for avoiding influences of leaping voltage on pixel electrode voltage and improving a display effect of the display device. The pixel structure comprises a public electrode line and at least one pixel unit which is formed by a gate line and a data line in a divided mode, wherein the gate line and the data line are intersected in a transverse-and-vertical mode. The pixel unit comprises a thin film transistor and a pixel electrode. The pixel structure further comprises an additional driving signal line. An additional capacitor used for compensating parasitic capacitance charges inside the pixel structure is formed by the additional driving signal line. An input signal of the additional driving signal line is opposite to an input signal of the gate line in phase.
Description
Technical field
The present invention relates to the display technique field, relate in particular to a kind of dot structure and driving method thereof, display device.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display, TFT-LCD) because its use that has and environmental protection characteristic are good, the automaticity height of broad application temperature range, manufacturing technology, be easy to advantages such as integrated, become the demonstration product of main flow just gradually.
TFT-LCD of the prior art is made up of a plurality of dot structures that matrix form is arranged usually, its typical unit picture element structure as shown in Figure 1, the grid line 11 and the data line 12 that comprise horizontal vertical intersection, crossover location place at grid line 11 and data line 12 is provided with thin film transistor (TFT) (TFT), the grid of this TFT is produced on the grid line 11, source electrode 1312 is connected with data line 12, drain electrode 1311 connects pixel electrode 132, to keep the voltage of pixel electrode 132, also be provided with the public electrode wire 10 parallel with grid line 11 in the dot structure, have memory capacitance between pixel electrode 132 and the public electrode.In this dot structure, many by adopting public electrode voltages (Vcom) remains unchanged and row overturns type of drive namely can realize effective control to LCD.
But a kind of like this weak point of TFT structure is, the grid of TFT and the drain electrode 1311 between since level difference will produce stray capacitance (Cgd), in the moment that grid line (Gate) 11 passes through Control of Voltage TFT switch, because the existence of Cgd, the variation from high to low of Gate voltage signal can make drain electrode 1311 export leaping voltages (Δ Vp) when TFT closed, this Δ Vp can cause the unexpected reduction of liquid crystal voltage in the pixel (Vlc), thereby influence the accuracy of pixel electrode 132 voltages (Vpixel), make display frame glimmer.
Summary of the invention
Embodiments of the invention provide a kind of dot structure and driving method thereof, display device, in order to the influence of avoiding leaping voltage that pixel electrode voltage is produced, improve the display effect of display device.
For achieving the above object, embodiments of the invention adopt following technical scheme:
The one side of the embodiment of the invention provides a kind of dot structure, comprising: public electrode wire, by at least one pixel cell that grid line and the data line of horizontal vertical intersection defines, and described pixel cell comprises thin film transistor (TFT) and pixel electrode; Described dot structure also comprises: the additional drives signal wire;
Described additional drives signal wire is formed for compensating the additional capacitor of described dot structure endoparasitism capacitance charge;
Described additional drives signal wire input signal is opposite with described grid line phase of input signals.
The embodiment of the invention provides a kind of display device on the other hand, comprises dot structure as mentioned above.
The embodiment of the invention on the other hand, a kind of dot structure driving method is provided, described dot structure comprises: public electrode wire, by at least one pixel cell that grid line and the data line of horizontal vertical intersection defines, and described pixel cell comprises thin film transistor (TFT) and pixel electrode; Described method comprises:
Described grid line input signal is used for opening line by line described TFT;
Described data line input signal is used for powering to described pixel electrode by the drain electrode of described TFT when described TFT opens;
Additional drives signal wire input signal is opposite with described grid line phase of input signals;
Wherein, described additional drives signal wire is formed for compensating the additional capacitor of described dot structure endoparasitism capacitance charge.
A kind of dot structure that the embodiment of the invention provides and driving method thereof, display device.By in dot structure, adding the additional drives signal wire that is parallel to grid line and/or data line, the drain electrode of this additional drives signal wire and TFT or pixel electrode form electric capacity, and this additional drives signal wire input signal is opposite with the grid line phase of input signals, so, the drain electrode of additional drives signal wire and TFT or the electric charge of electric capacity that pixel electrode forms can compensate the charge variation of stray capacitance, avoid the influence of leaping voltage to pixel electrode voltage, thereby improved the display effect of display device.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is dot structure synoptic diagram of the prior art;
A kind of dot structure synoptic diagram that Fig. 2 provides for the embodiment of the invention;
The another kind of dot structure synoptic diagram that Fig. 3 provides for the embodiment of the invention;
The another kind of dot structure synoptic diagram that Fig. 4 provides for the embodiment of the invention;
A kind of oscillogram that drives signal that Fig. 5 provides for the embodiment of the invention;
The another kind of drive signal waveform figure that Fig. 6 provides for the embodiment of the invention;
The another kind of drive signal waveform figure that Fig. 7 provides for the embodiment of the invention;
Another drive signal waveform figure that Fig. 8 provides for the embodiment of the invention;
The another kind of dot structure synoptic diagram that Fig. 9 provides for the embodiment of the invention;
The another kind of dot structure synoptic diagram that Figure 10 provides for the embodiment of the invention;
The another kind of dot structure synoptic diagram that Figure 11 provides for the embodiment of the invention;
The another kind of dot structure synoptic diagram that Figure 12 provides for the embodiment of the invention;
Another dot structure synoptic diagram that Figure 13 provides for the embodiment of the invention;
The circuit region structural representation that Figure 14 provides for the embodiment of the invention;
A kind of dot structure synoptic diagram that Figure 15 provides for the embodiment of the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
The embodiment of the invention provides a kind of dot structure, as shown in Figure 2, comprising:
Additional drives signal wire 14 is formed for compensating the additional capacitor of described dot structure endoparasitism capacitance charge.
Additional drives signal wire 14 input signals are opposite with grid line 11 phase of input signals.
Concrete, this additional capacitor can comprise: first electric capacity 21 that the drain electrode 1311 of additional drives signal wire 14 and thin film transistor (TFT) forms, perhaps second electric capacity 22 of additional drives signal wire 14 and pixel electrode formation.As shown in Figure 2, additional drives signal wire 14 can form first electric capacity 21 with the drain electrode 1311 of TFT131.Perhaps, the dot structure that the embodiment of the invention provides can also be as Fig. 3 or shown in Figure 4, and additional drives signal wire 14 forms second electric capacity 22 with pixel electrode 132.Certainly, the dot structure that more than forms first electric capacity 21 and/or second electric capacity 22 also only illustrates, and other dot structure designs that can form first electric capacity 21 and/or second electric capacity 22 are not enumerated one by one at this, but all should include protection scope of the present invention in.In a kind of like this dot structure of structure, additional drives signal wire 14 just can compensate the charge variation of stray capacitance with drain electrode 1311 formation first electric capacity 21 of TFT131 and the electric charge of additional drives signal wire 14 and pixel electrode 132 second electric capacity 22 that forms, the charge variation that namely realizes 14 pairs of stray capacitances of additional signal lines compensates, avoid the influence of leaping voltage to pixel electrode voltage, thereby improved the display effect of display device.
A kind of dot structure that the embodiment of the invention provides, by in dot structure, adding the additional drives signal wire that is parallel to grid line and/or data line, the drain electrode of this additional drives signal wire and TFT forms electric capacity, and this additional drives signal wire input signal is opposite with the grid line phase of input signals, so, the electric charge of the electric capacity that drain electrode forms of additional drives signal wire and TFT can compensate the charge variation of stray capacitance, avoid the influence of leaping voltage to pixel electrode voltage, thereby improved the display effect of display device.
Need to prove, be with ADS (Advanced-Super Dimensional Switching in embodiments of the present invention, abbreviate ADS as, senior super dimension field switch) liquid crystal indicator of pattern is the explanation that example is carried out, the longitudinal electric field that the parallel electric field that the ADS technology produces by pixel electrode edge in the same plane and pixel electrode layer and public electrode interlayer produce forms multi-dimensional electric field, make between the interior pixel electrode of liquid crystal cell, all aligned liquid-crystal molecules can both produce rotation conversion directly over the electrode, thereby to have improved planar orientation be the liquid crystal work efficiency and increased light transmission efficiency.Wherein, array base palte comprises first electrode (not shown among Fig. 2) that links to each other with public electrode wire 10 and second electrode that links to each other with the drain electrode of TFT, and in dot structure as shown in Figure 2, this second electrode can be pixel electrode 132.Additional drives signal wire 14 can arrange with layer with pixel electrode 132 but not be connected, the two makes material can be identical, because second electrode leaks metal level with the source and is in different levels, additional drives signal wire 14 namely can form first electric capacity 21 with the drain electrode 1311 of TFT131.Adopt a kind of like this dot structure of structure, need not to increase new production process and namely can produce additional drives signal wire 14, thereby reduced the production difficulty of product.Certainly the embodiment of the invention is not limited to the liquid crystal indicator of ADS pattern, in the liquid crystal indicator of other structures, can adopt a kind of like this design of additional drives signal wire equally, does not enumerate one by one at this.
In the middle of present embodiment, the waveform of the waveform of additional drives signal wire 14 input signals and grid line 11 input signals can be as shown in Figure 5, wherein, the waveform of additional drives signal wire 14 input signal Va is identical with the wave period of grid line 11 input signal Vg, and the saltus step direction is opposite.Concrete, when grid line 11 input high voltage signal Vgh, additional drives signal wire 14 is correspondingly imported low voltage signal Val; When grid line 11 input low voltage signal Vgl, additional drives signal wire 14 is correspondingly imported high voltage signal Vah.
Further, as shown in Figure 2, additional drives signal wire 14 input signals can also be used for the voltage of the described pixel electrode 132 of compensation, so that the absolute value of difference is in the pre-set interval scope between the voltage of the voltage of pixel electrode 132 and public electrode wire 10 input signals.
Need to prove, by pixel charging process of the prior art as can be known, specifically as shown in Figure 6, in frame period (1Frame period) in the time, after grid line (gate) 11 signal high voltages feed, the TFT switch opens, data line (data) 12 electric currents namely feed in the pixel electrode 14, grid line (gate) 11 signals became low-voltage after charging was finished, and the TFT switch cuts out, and pixel electrode 14 chargings are finished.But before next pixel charging beginning, also there is the regular hour, and during this period of time, the existence of the leakage current that causes owing to multiple reason, the difference that causes voltage (Vpixel) Yu public electrode wire 10 voltages (Vcom) of pixel electrode 14 in this frame period, namely | Vpixel-Vcom| can reduce gradually, so grey scale pixel value also can change thereupon, can not keep the gray-scale value of original setting, thereby cause the pixel display effect to reduce.
In embodiments of the present invention, the voltage that additional drives signal wire 14 input signals are used for the described pixel electrode 132 of compensation specifically refers to: as shown in Figure 6, in positive period (positive frame), because the voltage (Vpixel) of pixel electrode 132 is greater than the voltage (Vcom) of public electrode wire 10, upwards draw high by the voltage Va1 with additional drives signal wire 14 input and to be Va2, the voltage (Vpixel) of corresponding pixel electrode 132 also can upwards draw high, thereby realizing | Vpixel-Vcom| does not reduce, in negative cycle (Negative frame), because the voltage (Vpixel) of pixel electrode 132 is less than the voltage (Vcom) of public electrode wire 10, drop-down by the voltage Va1 that additional drives signal wire 14 is imported is reciprocal Va2, the voltage (Vpixel) of corresponding pixel electrode 132 also can be subjected to drop-down, thereby realizes | and Vpixel-Vcom| does not reduce.
Further, additional drives signal wire input signal is used for the voltage of the described pixel electrode of compensation, can be so that the absolute value of difference is in a pre-set interval scope between pixel electrode 132 voltages and public electrode wire 10 voltages.Concrete, pre-set interval can be the scope of choosing according to actual needs.For example, in a positive period as shown in Figure 7, because the voltage Vcom of public electrode wire 10 inputs is constant, the voltage of the pixel electrode 132 of process single compensation is between V1 and V2, so the absolute value of difference is in pre-set interval between the voltage Vcom of the voltage of pixel electrode 132 and 10 inputs of described public electrode wire | within the V1-V2|.
Perhaps, further, the absolute value of difference between the voltage (Vcom) of the voltage of pixel electrode 132 (Vpixel) and public electrode wire 10 inputs | the residing pre-set interval of Vpixel-Vcom| can also be a concrete value.As shown in Figure 8, the voltage of repeatedly adjusting the pixel electrode of importing by additional drives signal wire 14 132 of signal Va carries out real-Time Compensation, make the voltage of pixel electrode 132 be tending towards a fixed numeric values Vpq, because the voltage Vcom of public electrode wire 10 input is constant, the absolute value of difference between the voltage Vcom that the voltage Vpixel that therefore can guarantee pixel electrode 132 and public electrode wire 10 are imported | Vpixel-Vcom| is | Vpq-Vcom|.
Need to prove that additional drives signal wire 14 can be parallel with grid line 11; Perhaps, additional drives signal wire 14 can also be parallel with data line 12.
Concrete, in dot structure as shown in Figure 2, be parallel with additional drives signal wire 14 and grid line 11 be the explanation that example is carried out; In dot structure as shown in Figure 4, be parallel with additional drives signal wire 14 and data line 12 be the explanation that example is carried out.Perhaps can also be as shown in Figure 9, can add the additional drives signal wire 41 parallel with grid line 11 and the additional drives signal wire 42 parallel with data line 12 in the dot structure that the embodiment of the invention provides simultaneously.
Need to prove, in dot structure as shown in Figure 4, additional drives signal wire 14 forms with layer with data line 12 with the part that pixel electrode 132 forms second electric capacity 22, the two material is identical and do not connect mutually, and the remainder of additional drives signal wire 14 then is electrically connected by the material of pixel electrode 132 with layer.In dot structure as shown in Figure 9, additional drives signal wire 41,42 structure can be with reference to the structure of respective drive signal line among Fig. 2 and Fig. 4.
Further, when additional drives signal wire 14 and grid line 11 were parallel, additional drives signal wire 14 can be to form with layer metal material with grid line 11; Perhaps additional drives signal wire 14 can also arrange by different layer with grid line 11.
Further, when additional drives signal wire 14 and data line 12 were parallel, additional drives signal wire 14 can be to form with layer metal material with data line 12; Perhaps additional drives signal wire 14 can also arrange by different layer with data line 12.
Concrete, as shown in figure 10, the parallel and employing of additional drives signal wire 14 and grid line 11 is processing with one deck with a kind of metal material.For example, when after the surface of substrate forms metallic diaphragm, can adopt mask plate with corresponding exposure area to form the pattern of additional drives signal wire 14 and grid line 11 by composition technology.So, can simplify production process, effectively save production cost, reduce the production difficulty.
Perhaps, additional drives signal wire 14 can also adopt different materials with grid line 11, processes in different aspects.
Further, additional drives signal wire 14 can comprise the first sub-additional drives signal wire 141 and the second sub-additional drives signal wire 142.
The first sub-additional drives signal wire 141 can be parallel with grid line 11 or data line 12, and this first sub-additional drives signal wire 141 is positioned at outside the zone of grid line 11 or data line 12.In dot structure as shown in figure 11, be parallel and to be positioned at grid line 11 zones outer be the explanation that example is carried out with the first sub-additional drives signal wire 141 and grid line 11.Can see, parallel and when being positioned at outside grid line 11 zones when the first sub-additional drives signal wire 141 and grid line 11, a part of zone of the first sub-additional drives signal wire 141 will form overlapping region with the drain electrode 1311 of TFT131, and this overlapping region is first electric capacity 21.
The second sub-additional drives signal wire 142 is positioned at grid line 11 or data line 12 zones.
Need to prove, when the second sub-additional drives signal wire 142 is positioned at grid line 11 or data line 12 zones and grid line 11 or data line 12 different layers settings.
In the dot structure as shown in figure 11, when additional drives signal wire 14 arranged with grid line 11 different layers, the first sub-additional drives signal wire 141 and grid line 11 were parallel and be positioned at outside grid line 11 zones, and the second sub-additional drives signal wire 142 is positioned at the zone of grid line 11.Wherein, additional drives signal wire 14 can arrange with layer with pixel electrode 132 (not shown among Figure 11).Adopt a kind of like this additional drives signal wire 14 designs of broken line structure, because the second sub-additional drives signal wire 142 is positioned at grid line 11 or data line 12 zones, therefore this second sub-additional drives signal wire 142 need not to take the effective viewing area in the pixel cell 13, thereby has improved the aperture opening ratio of display device.
Further, the drain electrode 1311 of TFT131 can also be electrically connected with extension electrode 30, wherein, as shown in figure 11, extension electrode be the drain electrode 1311 of TFT131 along the zone that drive signal line 14 directions are extended mutually, and extension electrode 30 is electrically connected with the drain electrode of TFT13.Additional drives signal wire 14 forms first electric capacity 21 with drain electrode 1311 and the extension electrode 30 of described TFT131.So, by this electric connection mode, increased the area of the upper and lower substrate of first electric capacity 21, improved the storage capacity of first electric capacity 21, make the ability to bring along of 14 pairs of pixel electrode 132 voltages of additional drives signal wire increase, and reduced driving voltage.
Need to prove that in process, those skilled in the art can be according to specifically to the different length that require to regulate extension electrode 30 of the storage capacity of aperture opening ratio and stray capacitance.
Again for example, in dot structure as shown in figure 12, when additional drives signal wire 14 arranges with layer with grid line 11, additional drives signal wire 14 can comprise: the first sub-additional drives signal wire 141 and the second sub-additional drives signal wire 142, in dot structure as shown in figure 12, be parallel and be positioned at outside grid line 11 zones with the first sub-additional drives signal wire 141 and grid line 11 equally, the zone that the second sub-additional drives signal wire 142 is positioned at grid line 11 is the explanation that example is carried out.Wherein, the first sub-additional drives signal wire 141 will form overlapping region with pixel electrode 132, and this overlapping region is second electric capacity 22.Wherein, the first sub-additional drives signal wire 141 can arrange with layer with grid line 11, and finally can be from drawing the additional drives signal wire along the grid line direction.In addition or as shown in figure 13, when additional drives signal wire 14 and data line 12 are parallel, additional drives signal wire 14 can comprise: the first sub-additional drives signal wire 141 and the second sub-additional drives signal wire 142, in dot structure as shown in figure 13, be parallel and be positioned at outside data line 12 zones with the first sub-additional drives signal wire 141 and data line 12, the zone that the second sub-additional drives signal wire 142 is positioned at data line 12 is the explanation that example is carried out.Wherein, the first sub-additional drives signal wire 141 will form overlapping region with pixel electrode 132, and this overlapping region is second electric capacity 22.Wherein, the first sub-additional drives signal wire 141 can arrange with layer with data line 12, and finally can be from drawing the additional drives signal wire along the data line direction.In additional drives signal wire 14 designs of above several broken line structures, because the second sub-additional drives signal wire 142 is positioned at grid line or data line zone, therefore this second sub-additional drives signal wire 142 need not to take the effective viewing area in the pixel cell, thereby has improved the aperture opening ratio of display device.Certainly, more than additional drives signal wire 14 design of several broken line structures also only illustrate, other additional drives signal wire designs with broken line structure are not enumerated one by one at this, but all should include protection scope of the present invention in.
Need to prove that as shown in figure 14, the dot structure that the embodiment of the invention provides also comprises at least one group of parallel lead-in wire zone, each group lead-in wire zone 10 comprises first port one 01 and second port one 02.
Wherein, first port one 01 is used for introducing the signal of additional drives signal wire 14 inputs, and second port one 02 is used for introducing the signal of grid line 11 or data line 12 inputs.
Wherein, also comprise first circuit region 50 that is electrically connected with first port one 01, be used for driving additional drives signal wire 14.
The second circuit zone 51 that is electrically connected with described second port one 02 is used for driven grid line 11 or data line 12.
So, by will for to first port one 01 of additional drives signal wire 14 input signals be used for being produced in the same group of lead-in wire zone to second port one 02 of grid line 11 or data line 12 input signals, can need not the extra new lead-in wire zone that makes, simplify circuit structure greatly.
Need to prove that in embodiments of the present invention, first circuit region 50 and second circuit zone 51 all can adopt flexible circuit board to be made.First circuit region 50 and second circuit zone 51 can be structure as a whole, perhaps first circuit region 50 also can be produced on the different circuit boards with second circuit zone 51, in circuit as shown in figure 14, be to be made as the explanation that example is carried out respectively with first circuit region 50 and second circuit zone 51.Owing to consider and first circuit region 50 and second circuit zone 51 can be produced on processing cost in two zones that do not communicate of same circuit board.
Need to prove that additional drives signal wire 14 can adopt transparent conductive material to make in the dot structure that the embodiment of the invention provides.
Adopt transparent conductive material and utilize as shown in figure 11 and grid line or data line and the different layer setting of additional drives signal wire at same position, can be so that additional drives signal wire 14 improves the aperture opening ratio of display device when satisfying electric conductivity.
In whole embodiment involved in the present invention, need to prove, as shown in figure 15, for example in the pixel of the liquid crystal indicator under the ADS pattern, additional drives signal wire 14 may need to pass through in the dot structure unit lead-in wire intersection region 60, wherein connecting line 15 be used for conducting stride the Gate signal wire in public electrode in each pixel cell.Like this, when need passing through lead-in wire intersection region 60, additional drives line 14 then need to adopt via hole ways of connecting cross-over connection as shown in the figure to pass through, certainly such connecting line 15 also can exist in the dot structure of the liquid crystal indicator of other patterns of employing, and at Figure 11, Figure 12 etc. have also reserved the cross-over configurations of similar additional signal lines,, enumerate no longer one by one only with the above-mentioned example that Figure 15 shows that at this.
Below be example with dot structure in the prior art, the process that leaping voltage Δ Vp is produced is described in detail:
As shown in Figure 1, have memory capacitance between pixel electrode 132 and the public electrode in the dot structure that prior art adopts, and the drive pattern that remains unchanged of the voltage signal of public electrode wire 10.Because thin film transistor (TFT) (TFT) raceway groove is positioned on the grid line (gate) 11, so there is stray capacitance (Cgd), after grid line 11 input low-voltages, pixel electrode 14 is finished charging like this.But this liquid crystal capacitance Clc (not shown in figure 1), memory capacitance Cst (not expressing among Fig. 1), stray capacitance three's charge stored total amount equate before and after TFT closes.Before and after grid line 11 change in voltage, more than the total electrical charge sum of three capacitance stores equate, but because when TFT closed, grid line 11 voltages also produced voltage jump in this process, so can produce leaping voltage (Δ Vp) problem, the process of its generation is as follows:
(Vp1-Vgh)×Cgd+(Vp1-Vcom)×(Clc+Cst)
＝(Vp2-Vg1)×Cgd+(Vp2-Vcom)×(Clc+Cst)
Leaping voltage is:
Vp2-Vp1＝Cgd(Vgl-Vgh)/(Cgd+Clc+Cst)
Concrete, in pixel as shown in Figure 1, leaping voltage is:
ΔVp＝Cgd(Vgl-Vgh)/(Cgd+Clc+Cst).....................................(1)
Wherein Vg1 is the low-voltage (the gate voltage when TFT closes) of grid line 11 inputs, and Vgh is the high voltage (the gate voltage when TFT opens) of grid line 11 inputs.Vp1 is the voltage of the corresponding pixel electrode 14 of grid line 11 input high voltages (when TFT opens), and Vp2 is corresponding pixel electrode 14 voltages of grid line 11 input low-voltages (when TFT closes), and wherein drain electrode (drain) 133 voltages and pixel electrode 14 voltages are consistent.Because the gate change in voltage is come as can be seen by above-mentioned computing formula (1), because Vg1＜Vgh, then Vp2＜Vp1.When changing to Vg1, Vgh will produce a Δ Vp who reduces the voltage of pixel electrode 132.
At the reason that leaping voltage produces, the dot structure as shown in Figure 2 that proposes with the embodiment of the invention is example, and the concrete course of work of dot structure is elaborated:
As shown in Figure 2, additional drives signal wire 14 input signals are identical with grid line 11 input signal sequential, the saltus step direction of these additional drives signal wire 14 input signals is opposite with the saltus step direction that grid line 11 is gone into signal, and import rational signal and make 14 pairs of first caused electric charges of electric capacity 21 (Cad) of additional drives signal wire and change in voltage and grid line 11 input signals by the caused electric charge of stray capacitance (Cgd) and the positive and negative counteracting of change in voltage, thereby realize the solution of Δ Vp problem, computation process is as follows:
(Vp1-Vgh)×Cgd+(Vp1-Val)×Cad+(Vp1-Vcom)×(Clc+Cst)
＝(Vp2-Vg1)×Cgd+(Vp2-Vah)×Cad+(Vp2-Vcom)×(Clc+Cst)
Leaping voltage is:
Vp2-Vp1＝[Cgd(Vgl-Vgh)+(Vah-Val)Cad]/(Cgd+Clc+Cst+Cad)......(2)
Wherein Vah is the high voltage of additional drives signal wire 14 inputs, and Val is the low-voltage of additional drives signal wire 14 inputs.At this moment if want to realize then to satisfy Δ Vp=Vp2-Vp1=0:
Cgd(Vgh-Vgl)＝(Vah-Val)Cad
Can eliminate Δ Vp.By Val, the Vah of signal in the control additional drives signal wire 14, first electric capacity 21 (Cad) with and the saltus step sequential just can reduce or eliminate Δ Vp.Wherein the voltage signal that the key position of signal saltus step order mainly concentrates on the gate input in the additional drives signal wire 14 is jumped to the corresponding process of Vgl by Vgh, it also is the process that signal is jumped to Vah in the additional drives signal wire 14 by Val, wherein to jump to the time point of Vah and Val be the parameter of major control to the voltage difference of Vah to Val, needs to satisfy:
Cgd(Vgh-Vgl)＝(Vah-Val)Cad
The waveform synoptic diagram indicate the key position that produces Δ Vp when dotted line circle position is the voltage signal Vg saltus step of gate input, and the solid circles position is exactly the material time point in the 14 input respective signal Va saltus steps of additional drives signal wire as shown in Figure 5.And it is relative, rise to Vgh and Vah drops in the process of Val at Vgl, because TFT switch open, electric current in the data line 12 (data) also is being continuously the pixel charging, redistribute so though this transition position also can produce electric charge, because data line 12 is also in charging, so less for the influence of the voltage of final pixel electrode 132, can not cause producing in the liquid crystal voltage problems such as Δ Vp yet, in general calculating, not need to consider.
Further, in order when reducing or eliminating leaping voltage, to compensate pixel electrode, make the absolute value of difference between pixel electrode 132 voltages and public electrode wire 10 voltages in the pre-set interval scope.The dot structure as shown in Figure 2 that proposes with the embodiment of the invention is example, and a kind of so concrete course of work of dot structure is described in detail:
After the TFT131 switch cuts out, as shown in Figure 6, gate voltage is Vgl (when TFT disconnects), gate voltage is low-voltage Vgl, and remains unchanged in a frame period (frame period), and Va1 is that additional drives signal wire 14 draws high preceding voltage, Vp1 is that pixel electrode 132 is drawn high preceding voltage, Va2 is the voltage after additional drives signal wire 14 draws high, and Vp2 is that pixel electrode 132 is drawn high back voltage, and is same because charge conservation:
(Vp1-Vgl)×Cgd+(Vp1-Va1)×Cad+(Vp1-Vcom)×(Clc+Cst)
＝(Vp2-Vgl)×Cgd+(Vp2-Va2)×Cad+(Vp2-Vcom)×(Clc+Cst)
So leaping voltage is:
Vp2-Vp1＝(Va2-Va1)×Cad/(Cgd+Cad+Clc+Cst)..................(3)
In positive period (positive frame), when the voltage signal of selecting to adjust 14 inputs of additional drives signal wire, allow this signal when appropriate between section the time satisfy Va2-Va1＞0, Vp2＞Vp1 then, because in positive frame, the voltage of pixel electrode 132 (Vpixel) is greater than the voltage (Vcom) of public electrode wire 10, be Vpixel＞Vcom, make the voltage of pixel electrode 132 with respect to the difference of the voltage of public electrode wire 10 so | Vp2-Vcom|＞| Vp1-Vcom|, voltage with pixel electrode 132 rises to Vp2 from Vp1 like this, gray-scale value just can not reduce owing to the existence of leakage current, thereby liquid crystal voltage has obtained maintenance, in negative cycle (Negative frame) scope, can adopt similar method to realize | Vpixel-Vcom| remains unchanged, just in Negative frame scope, because Vpixel is less than Vcom, can select Va2-Va1＜0, thereby realize | Vp2-Vcom|＞| Vp1-Vcom|, reducing can not appear in the display gray scale quality of display device like this, thereby has improved the display quality of LCD.
For what and the relation of gray-scale value of leakage current electric charge, can be with reference to following calculating: be example with positive frame, because the existence of leakage current can cause | Vpixel-Vcom| reduces.At first, suppose that leakage current is i, the flow of charge vector in time t is Q, then satisfies following relation (Vp1 is power loss Q preceding pixel electrode voltage, and Vgl is grid voltage, and Va1 is line voltage signal, and Vp3 is the pixel electrode voltage behind the power loss Q) herein:
If the flow of charge vector is Q behind the time t, then
(Vp1-Vgl)×Cgd+(Vp1-Va1)Cad+(Vp1-Vcom)×(Clc+Cst)-Q
＝(Vp3-Vgl)×Cgd+(Vp3-Va1)Cad+(Vp3-Vcom)×(Clc+Cst)
After then the leakage current electric charge reached Q, its voltage was:
Vp3＝[Vp1(Cgd+Cad+Clc+Cst)-Q]/(Cgd+Cad+Clc+Cst)
Namely in time t, the drop-out value of the voltage of pixel electrode 132 (Δ Vp drop-out value) is:
Vp1-Vp3＝Q/(Cgd+Cad+Clc+Cst).........................................(4)
The slippage of corresponding grey scale is (n is the bit number):
|Vp1-Vcom|/2
n＝ΔVpixel/m
M is the GTG value of decline.
And when adjusting Va1 to Va2, do not reduce after charge Q flows out for keeping Vp1 voltage, then need to meet the following conditions:
(Vp1-Vgl)×Cgd+(Vp1-Va1)Cad+(Vp1-Vcom)×(Clc+Cst)-Q
＝(Vp1-Vgl)×Cgd+(Vp1-Va2)Cad+(Vp1-Vcom)×(Clc+Cst)
That is:
Va2＝Va1+Q/Cad.........................................................(5)
By above method, even as seen make charge Q run off because leakage current exists, when accurately having grasped the charge Q that runs off by measuring or calculating, just can still the voltage of pixel electrode 132 can be maintained by adjusting Va2 and Va1 | the level of Vp1-Vcom|, thus keep display effect not reduce.Identical with the preamble statement: in positive frame, because Vpixel is greater than Vcom, by Vpixel is upwards drawn high to realize | Vpixel-Vcom| does not reduce, at Negative frame, because Vpixel is less than Vcom, by Vpixel is pulled down to realize | Vpixel-Vcom| does not reduce.Can realize the lifting of display device display effect by above method.Concrete waveform as shown in Figure 6 and Figure 7.Fig. 6 wherein, Fig. 7 has only shown Va2 and Va1, namely in a positive frame or Negative frame, only promote the voltage of a pixel electrode 132, can also adopt mode such as multistage driving to improve the voltage (as in a frame period, continuing to add Va3, Va4, Van etc.) of pixel electrode 132, if Van or n quantity are abundant, just can realize the real-Time Compensation for the voltage of pixel electrode 132, i.e. waveform as shown in Figure 8.About the relation between Va1 and the Va2, with shown in Figure 7:
Va2＝Va1+Q/Cad
Wherein the Q value is for just in positive frame, and the Q value is for negative in Negative frame.The problem that the gray scale that the voltage that can solve pixel electrode 132 causes owing to the existence of leakage current reduces, thus the display quality of LCD promoted.
Need to prove, more than illustrational dot structure as shown in Figure 2, all are explanations of adopting additional drives signal wire 14 to be parallel to grid line 11 and to carry out with the structure that the drain electrode 1311 of TFT131 forms stray capacitances, when adopting as Fig. 3 or dot structure shown in Figure 12, additional drives signal wire 14 and grid line 11 are parallel and when forming the structure of second electric capacity 22 with pixel electrode, or adopt as Fig. 4 or shown in Figure 13, during the parallel structure of additional drives signal wire 14 and data line 12, such dot structure in the course of the work, in order to reduce or to eliminate leaping voltage and solve because leakage current causes | during problem that Vpixel-Vcom| reduces, its correlation computations formula (result of calculation (2) as mentioned, (3), (4), (5)) change first electric capacity (Cad) value into second electric capacity (Cap) value in and get final product, drive signal and change into relevant with Cap.Principle repeats no more here referring to previous embodiment in detail.
Further, when adopting dot structure as shown in Figure 9, when there is the structure of the additional drives signal wire 41 parallel with grid line 11 and the additional drives signal wire 42 parallel with data line 12 simultaneously in dot structure, can reduce or eliminate leaping voltage equally and solve because leakage current causes | problem that Vpixel-Vcom| reduces, thus promoted the display quality of LCD.Its detailed principle can repeat no more here referring to previous embodiment equally.
The embodiment of the invention provides a kind of display device, comprises aforesaid any one dot structure.The identical beneficial effect of dot structure that provides with previous embodiment of the present invention is provided, because dot structure has been described in detail in the aforementioned embodiment, repeats no more herein.
A kind of display device that the embodiment of the invention provides comprises dot structure.By in dot structure, adding the additional drives signal wire that is parallel to grid line and/or data line, the drain electrode of this additional drives signal wire and TFT or pixel electrode form electric capacity, and this additional drives signal wire input signal is opposite with the grid line phase of input signals, so, the drain electrode of additional drives signal wire and TFT or the electric charge of electric capacity that pixel electrode forms can compensate the charge variation of stray capacitance, avoid the influence of leaping voltage to pixel electrode voltage, thereby improved the display effect of display device.
The dot structure driving method that the embodiment of the invention provides, the dot structure that can be applied to provide in the previous embodiment.As shown in Figure 2, this dot structure comprises: public electrode wire 10, by at least one pixel cell 13 that grid line 11 and the data line 12 of horizontal vertical intersection defines, pixel cell 13 comprises TFT131 and pixel electrode 132 again.
The dot structure driving method that the embodiment of the invention provides comprises:
S101, grid line 11 input signals, this signal are used for opening line by line TFT131.
S102, data line 12 input signals, this signal are used for when TFT131 opens, and power to pixel electrode 132 by the drain electrode 1311 of TFT.
S103, additional drives signal wire 14 input signals are opposite with grid line 11 phase of input signals.
Wherein, additional drives signal wire 14 is formed for the additional capacitor of compensation pixel structure endoparasitism capacitance charge.
Concrete, as shown in Figure 2, this additional capacitor can comprise first electric capacity that the drain electrode 1311 of additional drives signal wire 14 and TFT forms, perhaps, as shown in Figure 3 and Figure 4, this additional capacitor can comprise second electric capacity 22 that additional drives signal wire 14 and pixel electrode 132 form.
A kind of dot structure driving method that the embodiment of the invention provides.By in dot structure, adding the additional drives signal wire that is parallel to grid line and/or data line, the drain electrode of this additional drives signal wire and TFT or pixel electrode form electric capacity, and this additional drives signal wire input signal is opposite with the grid line phase of input signals, so, the drain electrode of additional drives signal wire and TFT or the electric charge of electric capacity that pixel electrode forms can compensate the charge variation of stray capacitance, avoid the influence of leaping voltage to pixel electrode voltage, thereby improved the display effect of display device.
Further, the waveform of additional drives signal wire 14 input signals and the waveform of grid line 11 input signals are illustrated, as shown in Figure 5, additional drives signal wire 14 input signal Va are opposite with the phase place of grid line 11 input signal Vg.
Further, the driving method of the dot structure that provides of the embodiment of the invention also comprises:
S104,14 inputs of additional drives signal wire are used for the signal of compensation pixel electrode 132 voltages.So that the absolute value of difference is in the pre-set interval scope between the voltage of the voltage of described pixel electrode 132 and described public electrode wire 10 input signals, thereby improved the display quality of LCD.
Need to prove, by pixel charging process of the prior art as can be known, specifically as shown in Figure 1, after grid line (gate) 11 signal high voltages feed, the TFT13 switch opens, data line (data) 12 electric currents namely feed in the pixel electrode 14, and grid line (gate) 11 signals became low-voltage after charging was finished, the TFT switch cuts out, and pixel electrode 14 chargings are finished.But in the process of next pixel charging, also there is the regular hour, and during this period of time, the existence of the leakage current that causes owing to multiple reason, the difference that causes voltage (Vpixel) Yu public electrode wire 10 voltages (Vcom) of pixel electrode 14 in this frame period (Frame period), namely | Vpixel-Vcom| can reduce gradually, so grey scale pixel value also can change thereupon, can not keep the gray-scale value of original setting, thereby cause the pixel display effect to reduce.
Further, the indemnifying measure that additional drives signal wire 14 input signals are used for the voltage of the described pixel electrode of compensation specifically refers to: as shown in Figure 6, in positive period (positive frame), because pixel electrode voltage (Vpixel) is greater than public electrode voltages (Vcom), the voltage Va1 that the additional drives signal wire is imported in employing upwards draws high and is Va2, corresponding pixel electrode voltage (Vpixel) also can upwards draw high, thereby realizing | Vpixel-Vcom| does not reduce, at negative cycle (Negative frame), because pixel electrode voltage (Vpixel) is less than public electrode voltages (Vcom), employing with the voltage Va1 of additional drives signal wire input drop-down be Va2, corresponding pixel electrode voltage (Vpixel) also can be subjected to drop-down, thereby realizing | Vpixel-Vcom| does not reduce, thereby has promoted the display quality of LCD.。
Concrete, pre-set interval can be the scope of choosing according to actual needs.For example, in a positive period as shown in Figure 7, because the voltage Vcom of public electrode wire 10 inputs is constant, the voltage of the pixel electrode 132 of process single compensation is between V1 and V2, so the absolute value of difference is in pre-set interval between the voltage Vcom of the voltage of pixel electrode 132 and 10 inputs of described public electrode wire | within the V1-V2|.
Perhaps, further, the absolute value of difference between the voltage (Vcom) of the voltage of pixel electrode 132 (Vpixel) and public electrode wire 10 inputs | the residing pre-set interval of Vpixel-Vcom| can also be a concrete value.As shown in Figure 8, the signal of repeatedly adjusting by additional drives signal wire 14 input carries out real-Time Compensation to the voltage of pixel electrode 132, make the voltage of pixel electrode 132 be tending towards a fixed numeric values Vpq, because the voltage Vcom of public electrode wire 10 input is constant, the absolute value of difference between the voltage Vcom that the voltage Vpixel that therefore can guarantee pixel electrode 132 and public electrode wire 10 are imported | Vpixel-Vcom| is | Vpq-Vcom|.
At the reason that leaping voltage produces, the dot structure as shown in Figure 2 that proposes with the embodiment of the invention is example, and the driving method of dot structure is elaborated:
As shown in Figure 2, additional drives signal wire 14 input signals are identical with grid line 11 input signal sequential, the saltus step direction of these additional drives signal wire 14 input signals is opposite with the saltus step direction that grid line 11 is gone into signal, and import rational signal and make 14 pairs of first caused electric charges of electric capacity 21 (Cad) of additional drives signal wire and change in voltage and grid line 11 input signals by the caused electric charge of stray capacitance (Cgd) and the positive and negative counteracting of change in voltage, thereby realize the solution of Δ Vp problem, computation process is as follows:
(Vp1-Vgh)×Cgd+(Vp1-Val)×Cad+(Vp1-Vcom)×(Clc+Cst)
＝(Vp2-Vgl)×Cgd+(Vp2-Vah)×Cad+(Vp2-Vcom)×(Clc+Cst)
Leaping voltage is:
Vp2-Vp1＝[Cgd(Vgl-Vgh)+(Vah-Val)Cad]/(Cgd+Clc+Cst+Cad).........(6)
Wherein Vah is the high voltage of additional drives signal wire 14 inputs, and Va1 is the low-voltage of additional drives signal wire 14 inputs.At this moment if want to realize then to satisfy Δ Vp=Vp2-Vp1=0:
Cgd(Vgh-Vgl)＝(Vah-Val)Cad
Can eliminate Δ Vp.By Val, the Vah of signal in the control additional drives signal wire, first electric capacity 21 (Cad) with and the saltus step sequential just can reduce or eliminate Δ Vp.Wherein the voltage signal that the key position of signal saltus step order mainly concentrates on the gate input in the additional drives signal wire 14 is jumped to the corresponding process of Vgl by Vgh, it also is the process that signal is jumped to Vah in the additional drives signal wire 14 by Val, wherein to jump to the time point of Vah and Val be the parameter of our major control to the voltage difference of Vah to Val, needs to satisfy:
Cgd(Vgh-Vgl)＝(Vah-Val)Cad
The waveform synoptic diagram indicate the key position that produces Δ Vp when dotted line circle position is the voltage signal saltus step of gate input, and the solid circles position is exactly the material time point in the 14 input respective signal saltus steps of additional drives signal wire as shown in Figure 5.And it is relative, rise to Vgh and Vah drops in the process of Val at Vgl, because TFT switch open, electric current in the data line 12 (data) also is being continuously the pixel charging, redistribute so though this transition position also can produce electric charge, because data line 12 is also in charging, so less for the influence of the voltage of final pixel electrode 132, can not cause producing in the liquid crystal voltage problems such as Δ Vp yet, in general calculating, not need to consider.
Further, for pixel electrode is compensated, making the absolute value of difference between pixel electrode 132 voltages and public electrode wire 10 voltages in the pre-set interval scope, is example with as shown in Figure 1 dot structure, and the driving method of dot structure is described in detail:
When the transformable voltage of public electrode wire 10 input, the computation process of leaping voltage equally can be according to formula:
(Vp1-Vgl)×Cgd+(Vp1-Vcom1)×(Clc+Cst)
＝(Vp2-Vgl)×Cgd+(Vp2-Vcom2)×(Clc+Cst)
So leaping voltage is:
Vp2-Vp1＝(Vcom2-Vcom1)×(Clc+Cs)/(Cgd+Clc+Cst).......................(7)
In the process of the change in voltage of pixel electrode 132, as in positive frame, only need satisfy Vcom2＞Vcom1, just can realize the variation Vp2＞Vp1 of pixel electrode 132 voltages, after the voltage of pixel electrode 132 promotes, also need to satisfy this moment | Vp2-Vcom2|＞| Vp1-Vcom1| just can reach the purpose that the voltage that prevents pixel electrode 132 reduces, and concrete after the loss charge Q, Vcom1 and Vcom2 pass are:
(Vp1-Vgl)×Cgd+(Vp1-Vcom1)×(Clc+Cst)-Q
＝(Vp2-Vgl)×Cgd+(Vp2-Vcom2)×(Clc+Cst)
That is:
(Vp2-Vcom2)-(Vp1-Vcom1)＝((Vp1-Vp2)Cgd+Q)/(Clc+Cst).........(8)
Shown in following formula, no matter at positive frame or in Negative frame, also only need control to calculate | Vp2-Vcom2|＞| Vp1-Vcom1|, and its calculated relationship satisfies (7) formula, just can realize liquid crystal voltage | Vpixel-Vcom| keeps with stable, thereby has promoted the display quality of LCD.
Need to prove that this driving method not only can be applied to dot structure of the prior art as shown in Figure 1, can also be applied to the dot structure that the embodiment of the invention provides.Its computing method are the same, repeat no more herein.
Further, in order when reducing or eliminating leaping voltage, to compensate pixel electrode 132, make the absolute value of difference between the voltage of the voltage of pixel electrode 132 and public electrode wire 10 in the pre-set interval scope, the dot structure as shown in Figure 2 that proposes with the embodiment of the invention is example, and the driving method of dot structure is described in detail:
After the TFT131 switch cuts out, as shown in Figure 6, gate voltage is Vgl (when TFT disconnects), gate voltage is low-voltage Vgl, and remains unchanged in a frame period (frame period), and Va1 is that additional drives signal wire 14 draws high preceding voltage, Vp1 is that pixel electrode 132 is drawn high preceding voltage, Va2 is the voltage after additional drives signal wire 14 draws high, and Vp2 is that pixel electrode 132 is drawn high back voltage, and is same because charge conservation:
(Vp1-Vgl)×Cgd+(Vp1-Va1)×Cad+(Vp1-Vcom)×(Clc+Cst)
＝(Vp2-Vgl)×Cgd+(Vp2-Va2)×Cad+(Vp2-Vcom)×(Clc+Cst)
So leaping voltage is:
Vp2-Vp1＝(Va2-Va1)×Cad/(Cgd+Cad+Clc+Cst)...........................(9)
In positive period (positive frame), when the voltage signal of selecting to adjust 14 inputs of additional drives signal wire, allow this signal when appropriate between section the time satisfy Va2-Va1＞0, Vp2＞Vp1 then, because in positive frame, voltage (the Vpixel of pixel electrode 132, be Vp) greater than public electrode voltages (Vcom), be Vpixel＞Vcom, make the voltage of pixel electrode 132 with respect to the difference of public electrode wire 10 voltages so | Vp2-Vcom|＞| Vp1-Vcom|, voltage with pixel electrode 132 rises to Vp2 from Vp1 like this, gray-scale value just can not reduce owing to the existence of leakage current, thereby liquid crystal voltage has obtained maintenance, in negative cycle (Negative frame) scope, can adopt similar method to realize | Vpixel-Vcom| remains unchanged, just in Negative frame scope, because Vpixel is less than Vcom, can Va2-Va1＜0, thereby realize | Vp2-Vcom|＞| Vp1-Vcom|, reducing can not appear in the display gray scale quality of display device like this.
For what and the relation of gray-scale value of leakage current electric charge, can be with reference to following calculating: be example with positive frame, because the existence of leakage current can cause | Vpixel-Vcom| reduces.At first, suppose that leakage current is i, the flow of charge vector in time t is Q, then satisfies following relation (Vp1 is power loss Q preceding pixel electrode voltage, and Vgl is grid voltage, and Va1 is line voltage signal, and Vp3 is the pixel electrode voltage behind the power loss Q) herein:
If the flow of charge vector is Q behind the time t, then
(Vp1-Vgl)×Cgd+(Vp1-V?a1)Cad+(Vp1-V?com)×(Clc+Cst)-Q
＝(Vp3-Vgl)×Cgd+(Vp3-V?a1)Cad+(Vp3-V?com)×(Clc+Cst)
After then the leakage current electric charge reached Q, its voltage was:
Vp3＝[Vp1(Cgd+Cad+Clc+Cst)-Q]/(Cgd+Cad+Clc+Cst)
Namely in time t, the drop-out value of the voltage of pixel electrode 132 (Δ Vp drop-out value) is:
Vp1-Vp3＝Q/(Cgd+Cad+Clc+Cst)........................................(10)
The slippage of corresponding grey scale is (n is the bit number):
|Vp1-Vcom|/2
n＝ΔVpixel/m
M is the GTG value of decline.
And when adjusting Va1 to Va2, do not reduce after charge Q flows out for keeping Vp1 voltage, then need to meet the following conditions:
(Vp1-Vgl)×Cgd+(Vp1-Va1)Cad+(Vp1-Vcom)×(Clc+Cst)-Q
＝(Vp1-Vgl)×Cgd+(Vp1-Va2)Cad+(Vp1-Vcom)×(Clc+Cst)
That is:
Va2＝Va1+Q/Cad.........................................................(11)
By above method, even as seen make charge Q run off because leakage current exists, when accurately having grasped the charge Q that runs off by measuring or calculating, just can still the voltage of pixel electrode 132 can be maintained by adjusting Va2 and Va1 | the level of Vp1-Vcom|, thus keep display effect not reduce.Identical with the preamble statement: in positive frame, because Vpixel is greater than Vcom, by Vpixel is upwards drawn high to realize | Vpixel-Vcom| does not reduce, at Negative frame, because Vpixel is little, in Vcom, by Vpixel is drawn high downwards to realize | Vpixel-Vcom| does not reduce.Can realize the lifting of display device display effect by above method.Concrete waveform as shown in Figure 6 and Figure 7.Wherein Fig. 6 has only shown Va2 and Va1, namely in a positive frame or Negative frame, only promote the voltage of a pixel electrode 132, can also adopt mode such as multistage driving to improve the voltage (as in a frame period, continuing to add Va3, Va4, Van etc.) of pixel electrode 132, if Van or n quantity are enough big, just can realize the real-Time Compensation for the voltage of pixel electrode 132, i.e. waveform as shown in Figure 8, about the relation between Va1 and the Va2, with shown in Figure 7:
Va2＝Va1+Q/Cad
Wherein the Q value is for just in positive frame, and the Q value is for negative in Negative frame.The problem that the gray scale that the voltage that can solve pixel electrode 132 causes owing to the existence of leakage current reduces.
Need to prove, more than illustrational dot structure as shown in Figure 2, all are explanations of adopting additional drives signal wire 14 to be parallel to grid line 11 and to carry out with the structure that the drain electrode 1311 of TFT131 forms stray capacitances, when adopting as Fig. 3 or dot structure shown in Figure 12, additional drives signal wire 14 and grid line 11 are parallel and when forming the structure of second electric capacity 22 with pixel electrode, or adopt as Fig. 4 or shown in Figure 13, during the parallel structure of additional drives signal wire 14 and data line 12, such dot structure in the course of the work, in order to reduce or to eliminate leaping voltage and solve because leakage current causes | during problem that Vpixel-Vcom| reduces, its correlation computations formula (result of calculation (6) as mentioned, (9), (10), (11)) change first electric capacity (Cad) value into second electric capacity (Cap) value in and get final product, drive signal and change into relevant with Cap.Principle repeats no more here referring to previous embodiment in detail.
Further, when adopting dot structure as shown in Figure 9, when there is the structure of the additional drives signal wire 41 parallel with grid line 11 and the additional drives signal wire 42 parallel with data line simultaneously in dot structure, can reduce or eliminate leaping voltage equally and solve because leakage current causes | problem that Vpixel-Vcom| reduces, thus promoted the display quality of LCD.Its detailed principle can repeat no more here referring to previous embodiment equally.
One of ordinary skill in the art will appreciate that: all or part of step that realizes said method embodiment can be finished by the relevant hardware of programmed instruction, aforesaid program can be stored in the computer read/write memory medium, this program is carried out the step that comprises said method embodiment when carrying out; And aforesaid storage medium comprises: various media that can be program code stored such as ROM, RAM, magnetic disc or CD.
The above; only be the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (15)
1. dot structure comprises: public electrode wire, by at least one pixel cell that grid line and the data line of horizontal vertical intersection defines, and described pixel cell comprises thin film transistor (TFT) and pixel electrode; It is characterized in that described dot structure also comprises: the additional drives signal wire;
Described additional drives signal wire is formed for compensating the additional capacitor of described dot structure endoparasitism capacitance charge;
Described additional drives signal wire input signal is opposite with described grid line phase of input signals.
2. dot structure according to claim 1 is characterized in that, described additional capacitor comprises:
First electric capacity that the drain electrode of described additional drives signal wire and described thin film transistor (TFT) forms; And/or,
Second electric capacity that described additional drives signal wire and described pixel electrode form.
3. dot structure according to claim 1 is characterized in that, described additional drives signal wire input signal is used for the voltage of the described pixel electrode of compensation.
4. according to the arbitrary described dot structure of claim 1-3, it is characterized in that,
Described additional drives signal wire is parallel with described grid line; And/or,
Described additional drives signal wire is parallel with described data line.
5. dot structure according to claim 4 is characterized in that, described additional drives signal wire comprises with described grid line is parallel:
Described additional drives signal wire and described grid line are to form with layer metal material; Or,
The different layer of described additional drives signal wire and described grid line arranges.
6. dot structure according to claim 5 is characterized in that, when the different layer of described additional drives signal wire and described grid line arranged, the drain electrode of described additional drives signal wire and described thin film transistor (TFT) formed first electric capacity and comprises:
The drain electrode of described additional drives signal wire and described thin film transistor (TFT) and extension electrode form first electric capacity, described extension electrode be the drain electrode of described thin film transistor (TFT) along the zone that described drive signal line direction is extended, described extension electrode is electrically connected with the drain electrode of described thin film transistor (TFT).
7. dot structure according to claim 4 is characterized in that, described additional drives signal wire comprises with described data line is parallel:
Described additional drives signal wire and described data line are to form with layer metal material; Or,
The different layer of described additional drives signal wire and described data line arranges.
8. according to the arbitrary described dot structure of claim 1-3, it is characterized in that described additional drives signal wire comprises: the first sub-additional drives signal wire and the second sub-additional drives signal wire;
The described first sub-additional drives signal wire is parallel with described grid line or described data line, and the described first sub-additional drives signal wire is positioned at outside described grid line or the described data line zone;
The described second sub-additional drives signal wire is positioned at described grid line or described data line zone.
9. according to the arbitrary described dot structure of claim 1-3, it is characterized in that described dot structure also comprises at least one group of parallel lead-in wire zone, each is organized described lead-in wire zone and comprises first port and second port;
Described first port is used for introducing the signal of described additional drives signal wire input, and described second port is used for introducing the signal of described grid line or the input of described data line.
10. dot structure according to claim 9 is characterized in that, described dot structure also comprises:
First circuit region that is electrically connected with described first port is used for driving described additional drives signal wire;
The second circuit zone that is electrically connected with described second port is used for driving described grid line or described data line.
11. dot structure according to claim 1 is characterized in that, described additional drives signal wire adopts transparent conductive material to make.
12. a display device is characterized in that, comprises arbitrary described dot structure among the claim 1-11.
13. a dot structure driving method, described dot structure comprises: public electrode wire, by at least one pixel cell that grid line and the data line of horizontal vertical intersection defines, and described pixel cell comprises thin film transistor (TFT) and pixel electrode; It is characterized in that described method comprises:
Described grid line input signal is used for opening line by line described thin film transistor (TFT);
Described data line input signal is used for powering to described pixel electrode by the drain electrode of described thin film transistor (TFT) when described thin film transistor (TFT) is opened;
Additional drives signal wire input signal is opposite with described grid line phase of input signals;
Wherein, described additional drives signal wire is formed for compensating the additional capacitor of described dot structure endoparasitism capacitance charge.
14. dot structure driving method according to claim 13 is characterized in that, described additional capacitor comprises:
First electric capacity that the drain electrode of described additional drives signal wire and described thin film transistor (TFT) forms; And/or,
Second electric capacity that described additional drives signal wire and described pixel electrode form.
15. dot structure driving method according to claim 13 is characterized in that, described method also comprises:
Described additional drives signal wire input is used for the signal of the described pixel electrode voltage of compensation.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310164041.XA CN103257498B (en) | 2013-05-07 | 2013-05-07 | A kind of dot structure and driving method, display device |
| PCT/CN2013/085284 WO2014180091A1 (en) | 2013-05-07 | 2013-10-16 | Pixel structure and driving method therefor, and display apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310164041.XA CN103257498B (en) | 2013-05-07 | 2013-05-07 | A kind of dot structure and driving method, display device |
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| CN103257498A true CN103257498A (en) | 2013-08-21 |
| CN103257498B CN103257498B (en) | 2016-04-13 |
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| CN201310164041.XA Expired - Fee Related CN103257498B (en) | 2013-05-07 | 2013-05-07 | A kind of dot structure and driving method, display device |
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| WO2014180091A1 (en) | 2014-11-13 |
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