CN103248206B - Be applied to the switch mosfet pipe isolation drive method of the program control high voltage source of travelling wave tube - Google Patents
Be applied to the switch mosfet pipe isolation drive method of the program control high voltage source of travelling wave tube Download PDFInfo
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Abstract
The invention discloses a kind of switch mosfet pipe isolation drive method being applied to the program control high voltage source of travelling wave tube, by pulse-width signal after treatment, send into superhigh pressure Isolated Pulse Transformer and produce same width, with frequently but the contrary two groups of start pulse signals of phase place; Often organize triggering signal separately after push-pull amplifier circuit, transient suppress, drive the MOSFET power switch pipe work on respective brachium pontis.
Description
Technical field
The present invention relates to switch mosfet pipe isolation drive technical field, be specially a kind of switch mosfet pipe isolation drive method being applied to the program control high voltage source of travelling wave tube.
Background technology
Each supply voltage of the program control high voltage source of travelling wave tube is all reference with negative electrode, and main feature is that control precision is high, power output is large, voltage to earth is up to tens thousand of volts etc.; Program control high voltage source cathode voltage of the present invention up to 16kV, collector maximum power 4kW.First, because output voltage is higher, so will carry out the electrical isolation of superelevation between power main loop and control circuit, secondly, switching tube is operated in high-frequency high-power state, so must improve the antijamming capability of drive circuit; In addition, for guaranteed output MOFET works under high frequency, high pressure, big current, great challenge is proposed to the snap switch load capacity of power supply, load dynamic responding speed, the precision of voltage regulation; Therefore, the gate driver circuit of such power MOFET switching tube design high efficient and reliable is necessary for.
At present in traditional switch mosfet pipe isolation drive method, adopt the Drive Control Technique such as level shift, the isolation of light lotus root, Fiber isolation, pulse transformer isolation more.Level shift mode is not proper isolation, but a kind of mode of standard isolation, and power consumption is large, manufacturing process is difficult to realize.Light lotus root isolation method isolation pressure withstanding degree is not high, and switching frequency is low, and transmission delay, speed are slow, and common mode inhibition capacity is poor, and transmission range is short, needs to provide high voltage isolated power supply.Fiber isolation mode is isolated withstand voltage higher, effectively can suppress electromagnetic interference, but exist transmission delay, easily aging, need to provide high voltage isolated power supply.Pulse transformer isolation method isolates withstand voltage height, cost is low, reliability is high, transmission delay is little, switching frequency is high, strong to the rejection ability of common-mode signal, does not need to provide high voltage isolated power supply.
Pulse transformer isolation is a kind of isolated form that the wholly-controled device drive circuits such as MOSFET and IGBT are conventional, simply, do not need to provide insulating power supply, cost lower because it has circuit structure, pulse signals is without advantages such as transmission delays, the requirement of drive circuit electrical isolation, rapidity, stronger driving force can be met, therefore first consider in R&D process to adopt this isolation drive mode.But for high pressure, the program control high voltage source of powerful travelling wave tube, traditional pulse transformer isolation drive mode also cannot meet it and require.The present invention, on the basis of conventional pulse transformer isolation method, has creatively invented a kind of switch mosfet pipe isolation drive technology being applied to the program control high voltage source of travelling wave tube, i.e. a kind of novel passive pulse transformer isolation drive technology.
Summary of the invention
For prior art Problems existing, the object of this invention is to provide a kind of switch mosfet pipe isolation drive method being applied to the program control high voltage source of travelling wave tube.
In order to achieve the above object, the technical solution adopted in the present invention is:
Be applied to the switch mosfet pipe isolation drive method of the program control high voltage source of travelling wave tube, it is characterized in that: as the pulse-width signal of drive singal through vibration damping circuit, after eliminating long line oscillator noise, send into current buffering drive circuit, carry out current driving ability amplification, again through every straight vibration damping circuit, send into high_voltage isolation coupling transformer input, level produces same width, with frequently but the contrary two groups of start pulse signals of phase place secondarily; Often organize triggering signal separately through recommending amplification driving circuit, Channel-shifted buffer circuit, again after the Sofe Switch drive circuit with transient state inhibit feature, drive the MOSFET power switch pipe work on respective brachium pontis respectively, wherein, vibration damping circuit, every straight vibration damping circuit, and Sofe Switch drive circuit completes noise suppressing function jointly; Current buffering drive circuit, recommend amplification driving circuit form drive intensifier circuit; The capacitance of high_voltage isolation coupling transformer and input thereof then forms block isolating circuit, and its stopping direct current, the logical superperformance exchanged reach the electrical isolation function of drive circuit primary and secondary; High voltage isolating transformer is as one of key technology of the present invention, and the closely-coupled coiling in parallel of its primary and secondary, good insulation property, ultralow leakage inductance characteristic are enough to keep drive waveforms pulse characteristic and effectively avoid driving postponing; The Sofe Switch drive circuit that main switch grid, source electrode punching suppress magnetic bead to form, have when to present perception, high frequency when low frequency and tend to resistive feature, therefore Sofe Switch function can effectively be realized, there is good switching transient rejection ability, finally achieve the switch mosfet pipe isolation drive of the program control high voltage source of desirable travelling wave tube.
The program control high voltage source of travelling wave tube utilizes proprietary switch mosfet pipe isolation drive technology, realize the quick dynamic conditioning of power, reaching the various functions index of the special program control high voltage source of travelling wave tube test macro, is also the optimal selection in travelling wave tube program control high voltage source high pressure, high-power isolation inversion design.
The present invention is in the program control high voltage source design of travelling wave tube, according to the particularity of its high pressure, high power switch characteristic, have employed a kind of switch mosfet pipe isolation drive method of uniqueness, the method is skillfully constructed, circuit is reliable and practical, not only increase high-power momentary switch driving force, effectively inhibit switch drive noise, and the common phenomenon of the switch having stopped high-power further.
The invention has the beneficial effects as follows: drive circuit possesses good electrical isolation characteristic, avoid power stage circuit and interference is caused to signal processed; Meet MOSFET rapid translating and high peak current, overcome Miller effect; The propagation delay time of drive circuit is shorter, reduces switching dead time, improves control precision and the efficiency of converter; The drive circuit propagation delay time difference of bridge power pipe is also minimum, avoids two power tubes straight-through damage phenomenon of brachium pontis; In addition, drive circuit of the present invention is simple and reliable, volume is little, cost is low.
Accompanying drawing explanation
Fig. 1 is the schematic block circuit diagram of the inventive method.
Fig. 2 is the circuit theory diagrams of the inventive method.
Fig. 3 is driving transformer key point waveform schematic diagram.
Embodiment
As shown in Figure 1.The workflow of theory diagram shown in Fig. 1 is as follows: drive singal is after the long line vibration of vibration damping circuit for eliminating, and deliver to big current buffering drive circuit and carry out the process of expansion stream, transient state current drive capability expands to ampere level from milliampere level; Through being input to isolation coupling primary every straight vibration damping circuit, this transformer has high_voltage isolation, be coupled the characteristic such as good, transformer secondary output exports a pair pulse drive signal frequently same but completely anti-phase with width, again through two groups of circuitry control parameters and the on all four push-pull amplifier circuit of component parameter, Channel-shifted buffer circuit, push-pull amplifier circuit plays avoids common conducting effect, and Channel-shifted buffer circuit then can avoid the mutual interference turned on and off; Drive singal is after above-mentioned series of optimum process, deliver to respective Sofe Switch drive circuit, Sofe Switch drive circuit will be eliminated on the one hand switching tube that distributed capacitance voltage may cause and to mislead problem, realize the dynamic inhibit feature of switching surge electric current on the other hand, and then realize the perfect isolation drive function of switch mosfet pipe.
As shown in Figure 2.In fig. 2, resistance R1, R2 and R4, R5 are antihunt circuit, have and eliminate long line concussion effect.N1, N2 are big current buffering driver, it has the pulse output circuit ability of higher continuous output current and Geng Gao, there is rise and fall time and shorter internal delay time faster, and there is very low output inner resistance, the Hyblid Buffer Amplifier of electric current is driven and plays certain guarantee effect.In figure, V1 ~ V4 forms elementary peak absorbing and reverse connecting protection etc. jointly.Resistance R3, electric capacity C3 form elementary every direct sum vibration damping circuit.Transformer T1 is one of key technology of the present invention, and this pulse transformer has 3 windings, an armature winding and two secondary winding, and they all should have good insulating properties, and the number of turn between three is completely equal, is beneficial to close-coupled during coiling in parallel; Pulse transformer does not answer stored energy, therefore reduces to let out sense for improving drive waveforms and raising the efficiency extremely important, and such guarantee provides higher peak current when conducting or cut-off, effectively avoids the time delay in raster data model; The harsh situation of transient state under all conditions such as maximum duty cycle, maximum input voltage also must be considered in addition when Pulse Transformer Design.
V5, V6 and V11, V12 form respectively and recommend amplification driving circuit, further enhancing current driving ability.V7, V8 and V13, V14 form signal path conversion and buffer action, effectively ensure that multitube complementary drive function, reduce and mutually disturb.L1 ~ L8 is main switch grid, the punching of source electrode suppresses magnetic bead, increases driving force, reaches Sofe Switch effect and avoid the impact on switching waveform.
It can also be seen that from figure, this drive circuit has complementary drive function, and namely while a power MOSFET ON, another power MOSFET turns off, and these two drive singal are mutually isolated.Pulse transformer has two secondary winding, connects two independently drive circuits respectively.Because the Same Name of Ends of two secondary winding is just the opposite, then N1 export for high level, N2 export for low level time, upper group of drive circuit output voltage is just, it is negative that a lower group drive circuit brings out voltage, and vice versa.Because signal comes from same pulse transformer, so the complementarity of this circuit is fine, the generation of the bad phenomenon such as common effectively can be prevented.
Ensure that power and the gain amplifier requirement of electric current two aspect by above-mentioned all measures, thus ensure that Transient Gain and the speed index of loop of power circuit; Especially the innovative design of passive pulse transformer driving, greatly strengthen the switching capability of switching tube, inhibits switching noise, thus effectively can improve the high-power fan-out capability of high voltage transient of switching tube.
The feature of the inventive method is: start pulse signal has enough fast rising and decrease speed; Take low resistance as gate capacitance charges when opening, for grid provides low resistance discharge loop during shutoff, to improve the switching speed of power MOSFET; In order to make the reliable triggering and conducting of power MOSFET, trigger impulse voltage, compared with the cut-in voltage higher than switching tube, in order to prevent misleading, additionally provides sufficiently high reverse gate source voltage when it ends; During power switch pipe switch, required drive current is the charging and discharging currents of grid capacitance, and power tube interelectrode capacitance is larger, and required electric current is larger, and namely carrying load ability is larger.
In the present invention, N1, N2 adopt the high current buffering driving chip with high-power MOSFET driving force, and it has superior heavily loaded switch drive ability, and its important technological parameters requires as follows: Ipk=9A, Idc=2A, Tr=60nS, Tf=60nS, Td=30nS.Which improves the ability to bear of instantaneous short circuit electric current, is even more important for circuit of the present invention.Because the process of rising or falling of the generation of instantaneous short circuit electric current normally due to drive level pulse is oversize, or transmission delay is excessive, at this moment the MOSFET of high-pressure side and low-pressure side is in the state of conducting simultaneously in the very short time, between VDD-to-VSS, define short circuit.Instantaneous short circuit electric current can show the efficiency reducing power supply, can improve this problem after using high current buffering driving chip driver from two aspects:
First the rise time of MOSFET gate drive level is equal with fall time, and the time is shorter; TC4422EPA type driver when 1nF load, pulse rise time Tr and fall time Tf be only 25ns.Secondly the propagation delay of driving pulse is very short, ensure that the MOSFET of high-pressure side and low-pressure side has equal on-delay and turn-off delay; In the present invention, the rising edge of a pulse of TC4422EPA type driver and the propagation delay of trailing edge are all less than 2ns.And be difficult to realize in traditional discrete device circuit.Legacy drive is only applicable to the product that circuit is simple, output current is little, can not meet high performance requirement, also not have any cost advantage.
Drive circuit should possess good electrical isolation characteristic, avoids power stage circuit to cause interference to signal processed, and therefore the present invention adopts pulse transformer type of drive.Produce symmetrical negative pulse to accelerate the turn-off speed of MOSFET, ensure MOSFET reliable turn-off, improve the antijamming capability of drive circuit; Avoid the cut-in voltage because of MOSFET to decline in time simultaneously and MOSFET turn off time too high voltage stress cause MOSFET to mislead.Therefore, the design of self-made components pulse transformer is also one of key technology of the present invention.Pulse transformer specific design is as follows:
1, operating frequency fT=100kHz, to reduce pulse transformer volume, size; 2, supply voltage 15V, had both ensured the abundant switch conduction of MOSFET, guaranteed that again it is operated in place of safety; 3, average driving power >=1000mW.The selection of magnetic core of transformer:
The power capacity product of PQ2020 is 0.42, and be about twice than 0.22 numerical value, therefore design load leaves abundant surplus.
Calculate the inductance value of armature winding:
The primary and secondary umber of turn design of pulse transformer:
Get the primary and secondary number of turn and be 36 circles
Pulse transformer also takes following concrete measure when actual design makes: reduce umber of turn when meeting design requirement as far as possible; Suitable size magnetic core is selected to reduce winding thickness; The insulation between winding is reduced as far as possible under ensureing the prerequisite of insulation; Select the insulating material that dielectric constant is little; Reasonable arrangement winding polarity; Adopt electrostatic screen; The full coiling in parallel of primary and secondary employing winding, section of winding layering coiling, improves drive waveforms to reduce leakage inductance.
The propagation delay time of drive circuit should be the least possible, to reduce switching dead time, improves control precision and the efficiency of converter.The drive circuit propagation delay time difference of brachium pontis power tube should be little as far as possible.If propagation delay time difference is comparatively large, likely causes two power tubes of brachium pontis to lead directly to, cause power tube to damage.Therefore, driving each link on path all to consider transmission delay problem, middle power MOSFET switch tube V5, V6 and V11 of drive circuit, V12, and main switch all adopt the "None" transmission delay switching tube of low input grid capacitance, low transfer characteristic.In addition, in figure, all high frequency capacitances are high-frequency ceramic electric capacity, guarantee still to present stronger capacitive when high frequency, very little to the impedance of high-frequency signal, therefore can good absorbing high-frequency composition.The equivalent inductive reactance of such circuit overall is just less, and the ESR of high-frequency signal is also less, has effectively stopped higher-order of oscillation problem.As shown in Figure 3, Fig. 3 is the drive waveforms schematic diagram for V5, and in figure, key point oscillogram reflects the good "None" transmission delay characteristics of this circuit.
Present invention employs the Novel MOS FET switch pipe isolation drive technology being applied to the program control high voltage source of travelling wave tube, meet high pressure, the program control high voltage source of high power travelling wave tube to the particular/special requirement of drive circuit, avoid the series of problems such as parasitic oscillation, high pressure be common, make the quick switching of circuit to load have good transient state regulating power, and effectively improve stability and the dynamic performance index of system.
Claims (1)
1. be applied to the switch mosfet pipe isolation drive method of the program control high voltage source of travelling wave tube, it is characterized in that: as the pulse-width signal of drive singal through vibration damping circuit, after eliminating long line oscillator noise, send into current buffering drive circuit, carry out current driving ability amplification, again through every straight vibration damping circuit, send into isolation coupling circuit input end, level produces same width, with frequently but the contrary two groups of start pulse signals of phase place secondarily, often organize triggering signal separately through recommending amplification driving circuit, Channel-shifted buffer circuit, again after the Sofe Switch drive circuit with transient state inhibit feature, drive the switch mosfet pipe work on respective brachium pontis respectively, wherein, vibration damping circuit, every straight vibration damping circuit, and Sofe Switch drive circuit completes noise suppressing function jointly, current buffering drive circuit, recommend amplification driving circuit form drive intensifier circuit, the capacitance of isolation coupling circuit and input thereof then forms block isolating circuit, and its stopping direct current, the logical superperformance exchanged reach the electrical isolation function of drive circuit primary and secondary, the closely-coupled coiling in parallel of high voltage isolating transformer primary and secondary, good insulation property, ultralow leakage inductance characteristic are enough to keep drive waveforms pulse characteristic and effectively avoid driving postponing, the Sofe Switch drive circuit that switch mosfet tube grid, source electrode punching suppress magnetic bead to form, have when to present perception, high frequency when low frequency and tend to resistive feature, therefore Sofe Switch function can effectively be realized, there is good switching transient rejection ability, finally achieve the switch mosfet pipe isolation drive of the program control high voltage source of desirable travelling wave tube, vibration damping circuit comprises resistance R1, resistance R2, resistance R4, resistance R5, resistance R1 one end access drive singal Dr1, resistance R1 other end access current buffering drive circuit, between resistance R2 one end access resistance R1 and current buffering drive circuit, resistance R2 other end ground connection, resistance R4 one end access drive singal Dr2, resistance R4 other end access current buffering drive circuit, between resistance R5 one end access resistance R4 and current buffering drive circuit, resistance R5 other end ground connection, current buffering drive circuit comprises current buffering driver N1 and N2, the wherein supplying power for input end resistance R1 other end access of current buffering driver N1, the positive power source terminal of current buffering driver N1 connects 15V voltage, the negative power end ground connection of current buffering driver N1, the output access of current buffering driver N1 is every straight vibration damping circuit, the positive power source terminal of current buffering driver N1 is also connected with self output by electric capacity C1, and the negative power end of current buffering driver N1 is also directly connected with self output, the supplying power for input end resistance R4 other end access of current buffering driver N2, the positive power source terminal of current buffering driver N2 connects 15V voltage, current buffering driver N2 negative power end ground connection, the output access of current buffering driver N2 is every straight vibration damping circuit, the positive power source terminal of current buffering driver N2 is also connected with self output by electric capacity C2, and the negative power end of current buffering driver N2 is also directly connected with self output, resistance R3, electric capacity C3, voltage stabilizing didoe V1, V2, V3, V4 is comprised every straight vibration damping circuit, resistance R3 one end is connected with current buffering driver N1 output in current buffering drive circuit, resistance R3 other end access isolation coupling circuit, between voltage stabilizing didoe V1 anode access resistance R3 and current buffering driver N1 output, voltage stabilizing didoe V1 negative electrode access 15V voltage, between voltage stabilizing didoe V2 negative electrode access resistance R3 and current buffering driver N1 output, voltage stabilizing didoe V2 anode access-15V voltage, electric capacity C3 one end is connected with current buffering driver N2 output in current buffering drive circuit, electric capacity C3 other end access isolation coupling circuit, between voltage stabilizing didoe V3 anode access electric capacity C3 and current buffering driver N2 output, voltage stabilizing didoe V3 negative electrode access 15V voltage, between voltage stabilizing didoe V4 negative electrode access electric capacity C3 and current buffering driver N2 output, voltage stabilizing didoe V4 anode access-15V voltage, isolation coupling electricity routing transformer T1 is formed, transformer T1 has a primary coil and two secondary coils, primary coil one end in resistance R3 other end access transformer T1 in straight vibration damping circuit, the primary coil other end in electric capacity C3 other end access transformer T1 in straight vibration damping circuit, transformer T1 two secondary coil separately two ends accesses respectively and recommends amplification driving circuit, recommend amplification driving circuit and comprise metal-oxide-semiconductor V5, V6, V11, V12, wherein metal-oxide-semiconductor V5, the source electrode of V6 connects altogether and is connected with first the secondary coil one end of transformer T1 in isolation coupling circuit afterwards, the grid of metal-oxide-semiconductor V5 is by resistance R6, the grid of metal-oxide-semiconductor V6 is connect altogether by resistance R9 and is connected with first the secondary coil other end of transformer T1 in isolation coupling circuit afterwards, electric capacity C4 is connected with between the grid of metal-oxide-semiconductor V5 and drain electrode, the drain electrode of metal-oxide-semiconductor V5 also accesses Channel-shifted buffer circuit, electric capacity C5 is connected with between the grid of metal-oxide-semiconductor V6 and drain electrode, the drain electrode of metal-oxide-semiconductor V6 also accesses Channel-shifted buffer circuit, the source electrode of metal-oxide-semiconductor V11, V12 connects altogether and is connected with second the secondary coil one end of transformer T1 in isolation coupling circuit afterwards, the grid of metal-oxide-semiconductor V11 is connected with second the secondary coil other end of transformer T1 in isolation coupling circuit after being connect altogether by resistance R16 by the grid of resistance R13, metal-oxide-semiconductor V12, electric capacity C7 is connected with between the grid of metal-oxide-semiconductor V11 and drain electrode, the drain electrode of metal-oxide-semiconductor V11 also accesses Channel-shifted buffer circuit, be connected with electric capacity C8 between the grid of metal-oxide-semiconductor V12 and drain electrode, the drain electrode of metal-oxide-semiconductor V12 also accesses Channel-shifted buffer circuit, Channel-shifted buffer circuit comprises the diode group V7 be made up of two diode series aiding connections respectively, V8, V13, V14, and resistance R7, R8, R10, R11, R14, R15, R17, R18, the anode tap of diode group V7 is by resistance R8, the anode tap of diode group V8 is connect altogether by resistance R7 and is connected with the drain electrode of recommending metal-oxide-semiconductor V5 in amplification driving circuit afterwards, the cathode terminal of diode group V7 is by resistance R10, the cathode terminal of diode group V8 is connect altogether by resistance R11 and is connected with the drain electrode of recommending metal-oxide-semiconductor V6 in amplification driving circuit afterwards, Sofe Switch drive circuit is accessed altogether by wire between two diodes between two diodes and in diode group V8 in diode group V7, the anode tap of diode group V13 is connected with the drain electrode of recommending metal-oxide-semiconductor V11 in amplification driving circuit after being connect altogether by resistance R14 by the anode tap of resistance R15, diode group V14, the cathode terminal of diode group V13 is connected with the drain electrode of recommending metal-oxide-semiconductor V12 in amplification driving circuit after being connect altogether by resistance R18 by the cathode terminal of resistance R17, diode group V14, is connect altogether access Sofe Switch drive circuit in diode group V13 between two diodes and in diode group V14 between two diodes by wire, Sofe Switch drive circuit comprises metal-oxide-semiconductor V9, V10, V15, V16, inductance L 1, L2, L3, L4, L5, L6, L7, L8, electric capacity C6, C9, resistance R12, R19, the grid of metal-oxide-semiconductor V10 is accessed in Channel-shifted buffer circuit by inductance L 2 and connects wire altogether between diode group V7 and V8, the drain electrode of metal-oxide-semiconductor V10 is connected between diode group V7 and the V8 that inductance L 2 accesses by electric capacity C6 and connects altogether on wire, the source electrode of metal-oxide-semiconductor V10 be connected to by inductance L 4 recommend metal-oxide-semiconductor V5 in amplification driving circuit grid by resistance R6, what the grid of metal-oxide-semiconductor V6 was connect altogether by resistance R9 connects on end altogether, and the drain electrode of metal-oxide-semiconductor V10 also connects lead-out terminal+RATL1 by wire, inductance L 4 and metal-oxide-semiconductor V5, V6 grid also to lead to wire by connecing altogether of connecing altogether of resistance and connects lead-out terminal-RATL1 between end, the grid of metal-oxide-semiconductor V9 is accessed in Channel-shifted buffer circuit by inductance L 1 and connects wire altogether between diode group V7 and V8, the drain electrode of metal-oxide-semiconductor V9 is connected with the drain electrode of metal-oxide-semiconductor V10, the source electrode of metal-oxide-semiconductor V9 be connected to by inductance L 3 recommend metal-oxide-semiconductor V5 in amplification driving circuit grid by resistance R6, what the grid of metal-oxide-semiconductor V6 was connect altogether by resistance R9 connects on end altogether, and resistance R12 is connected between inductance L 1 and inductance L 3, the grid of metal-oxide-semiconductor V16 is accessed in Channel-shifted buffer circuit by inductance L 6 and connects wire altogether between diode group V13 and V14, the drain electrode of metal-oxide-semiconductor V16 is connected between diode group V13 and the V14 that inductance L 6 accesses by electric capacity C9 and connects altogether on wire, the source electrode of metal-oxide-semiconductor V16 be connected to by inductance L 8 recommend metal-oxide-semiconductor V11 in amplification driving circuit grid by resistance R13, what the grid of metal-oxide-semiconductor V12 was connect altogether by resistance R16 connects on end altogether, the drain electrode of metal-oxide-semiconductor V16 also connects lead-out terminal+RATL2 by wire, inductance L 8 and metal-oxide-semiconductor V11, V12 grid also to lead to wire by connecing altogether of connecing altogether of resistance and connects lead-out terminal-RATL2 between end, the grid of metal-oxide-semiconductor V15 is accessed in Channel-shifted buffer circuit by inductance L 5 and connects wire altogether between diode group V13 and V14, the drain electrode of metal-oxide-semiconductor V15 is connected with the drain electrode of metal-oxide-semiconductor V16, the source electrode of metal-oxide-semiconductor V15 be connected to by inductance L 7 recommend metal-oxide-semiconductor V11 in amplification driving circuit grid by resistance R13, what the grid of metal-oxide-semiconductor V12 was connect altogether by resistance R16 connects on end altogether, resistance R19 is connected between inductance L 5 and inductance L 7.
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| CN105515349B (en) * | 2015-12-02 | 2018-06-26 | 中国电子科技集团公司第四十一研究所 | A kind of switch tube driving circuit applied to programme-controlled dc power |
| CN111684694A (en) * | 2018-10-29 | 2020-09-18 | 深圳配天智能技术研究院有限公司 | Drive circuit and switching power supply |
| CN112434401B (en) * | 2020-10-15 | 2021-10-08 | 北京交通大学 | Method for responding high-frequency pulse interference by MOSFET grid-source voltage |
| CN116488624B (en) * | 2023-05-11 | 2024-05-24 | 天津大学 | All-solid-state nanosecond high-voltage pulse switch |
| CN116704956B (en) * | 2023-08-07 | 2023-10-13 | 上海视涯技术有限公司 | Level conversion circuit, silicon-based organic light-emitting micro display panel and display device |
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