CN103247540A - Device, system and method for encapsulating IGBT module - Google Patents
Device, system and method for encapsulating IGBT module Download PDFInfo
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- CN103247540A CN103247540A CN2012100276046A CN201210027604A CN103247540A CN 103247540 A CN103247540 A CN 103247540A CN 2012100276046 A CN2012100276046 A CN 2012100276046A CN 201210027604 A CN201210027604 A CN 201210027604A CN 103247540 A CN103247540 A CN 103247540A
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Abstract
The invention provides a device, a system and a method for encapsulating an IGBT module. The device includes a first piston, a second piston, a pressing block and a gel mixing pipe, wherein the first piston is provided with a first piston rod and a first cylinder body; a first feed port and a first discharge port are formed in the first cylinder body; the first cylinder body is used for accommodating a base stock; the second piston is provided with a second piston rod and a second cylinder body; a second feed port and a second discharge port are formed in the second cylinder body; the second cylinder body is used for accommodating catalyst; the pressing block is fixed with the first piston rod and the second piston rod; driven by the pressing block, the first piston rod and the second piston rod simultaneously ascend or descend; the gel mixing pipe is provided with an inlet and an outlet that are mutually communicated; the inlet is communicated with the first discharge port and the second discharge port; and the outlet is used for outputting liquid silica gel compounds. Through the adoption of the IGBT module encapsulating device for encapsulation, the volume ratio of the base stock and the catalyst can be accurately controlled, the large batched, standardized and refined production is facilitated, the performance index of products in mass production is the consistent, the repeatability is excellent, and the quality is reliable.
Description
Technical field
The present invention relates to semiconductor packaging, relate in particular to a kind of IGBT module package equipment, system and method.
Background technology
High speed development along with China's economic, fields such as high ferro, subway, urban track traffic, wind-powered electricity generation, solar energy, clean energy resource are all in continuous development, in these fields, igbt (Insulated Gate Bipolar Transistor is hereinafter to be referred as IGBT) module is widely used in the inverter in these fields.Along with science and technology development, high technology content, baroque convertor assembly division of labor based on specialization be extremely strong, be tending towards modularization more.So large-scale modular member production requires high to the IGBT module at aspects such as homogeneity of product and reliabilities.In the IGBT module package is produced, extensively adopt materials such as silicon gel that IGBT inside modules element is carried out whole embedding, the globality of strengthening electronic device, raising is to the resistance of external shock, vibrations, improve insulation property between inner member, circuit, be conducive to device to miniaturization, lightweight development, avoid element, circuit etc. directly to be exposed in the air simultaneously, improve waterproof, the humidity resistance of device, promote product quality.
The traditional handicraft of silicon gel embedding be with the liquid-state silicon gel composite by hand or mechanical system pour in the device that electronic component, circuit are housed, under normal temperature or heating condition, be solidified into the thermosetting polymer insulating material of excellent performance.The liquid-state silicon gel composite comprises A component and B component, and wherein the A component is base-material, and the B component is catalyst.Referring to Fig. 1 a and Fig. 1 b, be example with the IGBT module of certain model, the IGBT module has base plate 1, is arranged on the insulated substrate 3 on the base plate 1, is arranged on the chip 4 on the insulated substrate 3, be located in the shell 2 on this base plate 1.Insulated substrate 3 and chip 4 all are positioned at the cavity that shell 2 and base plate 1 surround.In addition, the cavity except insulated substrate 3 and chip 4 all is used for ccontaining liquid-state silicon gel composite 20 in the cavity.Offer two embedding mouths 5 on the shell 2, be used for pouring into liquid-state silicon gel composite 20.
Existing silicon gel encapsulating method is as follows: at first, the ratio of manual type modulation A component and B component is made the liquid-state silicon gel composite; Secondly, adopt manual mode that the liquid-state silicon gel composite is circulated into the IGBT inside modules from the embedding mouth.
Existing silicon gel encapsulating method, base-material and catalyst when mixing, the ratio of base-material and catalyst is difficult to accurately control, and meeting out of proportion have a strong impact on encapsulation and finish after the performance of IGBT module.
Summary of the invention
The invention provides a kind of IGBT module package equipment, system and method, be used for optimizing the performance of existing IGBT module.
The invention provides a kind of IGBT module package equipment, wherein, comprising:
First piston has first piston bar and first cylinder body, offers first charging aperture and first discharging opening on described first cylinder body, and described first cylinder body is used for ccontaining base-material;
Second piston has second piston rod and second cylinder body, offers second charging aperture and second discharging opening on described second cylinder body, and described second cylinder body is used for ccontaining catalyst;
Briquetting is fixed with described first piston bar and second piston rod, with under the drive of described briquetting, makes described first piston bar and second piston rod rise simultaneously or descend;
Mix sebific duct, have the entrance and exit of mutual perforation, described entrance is communicated with described first discharging opening and second discharging opening, and described outlet is used for dispensing liquid silicon gel composite, and wherein, the liquid-state silicon gel composite is base-material and the catalyst that mixes.
The present invention also provides a kind of IGBT module package system, its kind:
Comprise vacuum chamber, be provided with the arbitrary described IGBT module package equipment of objective table and the present invention in the described vacuum chamber, described objective table is used for carrying IGBT module to be packaged, and described IGBT module package equipment is used for injecting the liquid-state silicon gel composite to the cavity of described IGBT module.
The present invention provides a kind of IGBT module encapsulation method again, wherein, comprising:
In vacuum environment, use the arbitrary described IGBT module package equipment of the present invention in the cavity of IGBT module, to inject the liquid-state silicon gel composite, wherein, the liquid-state silicon gel composite is base-material and the catalyst that mixes;
After in the cavity of IGBT module, filling up described liquid-state silicon gel composite, the IGBT module is kept the time of setting in vacuum environment.
IGBT module package equipment provided by the invention, system and method, wherein, use IGBT module package equipment to encapsulate the volume ratio that accurately to control base-material and catalyst, and be convenient to carry out in enormous quantities, standardize and the production that becomes more meticulous typical products in mass production performance index unanimity, good reproducibility, reliable in quality.
Description of drawings
Fig. 1 a is IGBT modular structure schematic diagram;
Fig. 1 b is the cutaway view of Fig. 1 a;
The IGBT module package device structure schematic diagram that Fig. 2 provides for the embodiment of the invention one.
The IGBT module encapsulation method flow chart that Fig. 3 provides for the embodiment of the invention three;
The IGBT module encapsulation method flow chart that Fig. 4 provides for the embodiment of the invention four.
Reference numeral:
The 1-base plate; The 2-shell; The 3-insulated substrate;
The 4-chip; 5-embedding mouth; The 6-first piston;
7-second piston; The 8-briquetting; 9-mixes sebific duct;
61-first piston bar; 62-first cylinder body; 621-first charging aperture;
622-first discharging opening; 71-second piston rod; 72-second cylinder body;
721-second charging aperture; 722-second discharging opening; The 91-entrance;
The 92-outlet; 10-first barrel; 11-second barrel;
20-liquid-state silicon gel composite.
Embodiment
The IGBT module package device structure schematic diagram that Fig. 2 provides for the embodiment of the invention one.
Referring to Fig. 2, the embodiment of the invention one provides a kind of IGBT module package equipment, and it comprises first piston 6, second piston 7, briquetting 8 and mixed sebific duct 9; First piston 6 has and offers first charging aperture 621 on first piston bar 61 and first cylinder body, 62, the first cylinder bodies 62 and first discharging opening, 622, the first cylinder bodies 62 are used for ccontaining base-material; Second piston 7 has and offers second charging aperture 721 on second piston rod 71 and second cylinder body, 72, the second cylinder bodies 72 and second discharging opening, 722, the second cylinder bodies 72 are used for ccontaining catalyst; Briquetting 8 is fixing with first piston bar 61 and second piston rod 71, with under the drive of briquetting 8, makes first piston bar 61 and second piston rod 71 rise simultaneously or descend; Mix entrance 91 and outlet 92 that sebific duct 9 has mutual perforation, entrance 91 is communicated with first discharging opening 622 and second discharging opening 722, and outlet 92 is used for dispensing liquid silicon gel composite, and wherein, the liquid-state silicon gel composite is base-material and the catalyst that mixes.
Mixed sebific duct has only an outlet, and when the IGBT module had a plurality of embedding mouth, it was motionless to mix sebific duct, adjusted the position of IGBT module, to realize pouring into the liquid-state silicon gel composite from a plurality of embedding mouths.
Adopt the benefit of above-mentioned IGBT module package equipment to be that entire equipment should place vacuum environment, so that carry out the encapsulation under the vacuum environment; In addition, use after the said equipment, base-material and catalyst mix in mixing sebific duct, inject then in the cavity of IGBT module, have improved the automaticity of IGBT module package; At last, because the volume of first piston and the second internal piston cylinder body is certain, as long as the volume ratio of first cylinder body and second cylinder body rationally is set, just can guarantee that the ratio of base-material and catalyst is accurate, guarantee the performance of liquid-state silicon gel composite.
Further, mixing sebific duct 9 inside is helical form, and along the direction from entrance 91 to outlet 92, spiral is more and more intensive.
Mixing sebific duct inside and be set to helical form, is for more uniform mixed resin and catalyst, guarantees that base-material and catalyst can fully mix, and has guaranteed the performance of liquid-state silicon gel composite.
Referring to Fig. 2, further, IGBT module package equipment also comprises first barrel 10 and second barrel 11; First barrel 10 is communicated with first charging aperture 621, is used for importing base-material to first cylinder body 62; Second barrel 11 is communicated with second charging aperture 721, is used for to second cylinder body, 72 enter catalysts.
It is for convenience to first cylinder body and second cylinder interior input base-material and catalyst that first barrel and second barrel are set.
At present, the mixed proportion of base-material and catalyst is 1: 1.3 in the industry standard, so in the present embodiment, the volume ratio of the ccontaining material of energy is 1: 1.3 in first barrel and second barrel.
Referring to Fig. 2, when first piston bar 61 and second piston rod 71 move to topmost, be full of base-material in first cylinder body 62, be full of catalyst in second cylinder body 72, this moment, the volume ratio of base-material and catalyst was 1: 1.3, when first piston bar 61 and second piston rod 71 moved downward simultaneously, base-material and catalyst always entered into according to this ratio and mix sebific duct 9.
The IGBT module package equipment that technique scheme provides, be convenient to carry out in enormous quantities, standardize and the production that becomes more meticulous and typical products in mass production performance index unanimity, good reproducibility, reliable in quality.In addition, the proportioning of base-material and catalyst can accurately be controlled, and can carry out automatic embedding, IGBT module package efficient height.
The IGBT module package equipment that present embodiment provides can be set the most appropriate proportioning parameter according to component characteristic and the properties of product requirement of base-material and catalyst, thereby determines the volumetric ratio of first piston and second piston.Mixed sebific duct can effectively guarantee the uniformity of base-material and catalyst mix, thereby guarantees hardness, elasticity and tack behind base-material and the polymerization catalyst, has guaranteed the product quality after encapsulation is finished.At last, the IGBT module package equipment that uses present embodiment to provide can effectively carry out the batch process of product, and can guarantee the consistency of embedding quality in batches.
The embodiment of the invention two also provides a kind of IGBT module package system, it comprises vacuum chamber, be provided with objective table and the described IGBT module package of any embodiment of the present invention equipment in the described vacuum chamber, objective table is used for carrying IGBT module to be packaged, and IGBT module package equipment is used for injecting the liquid-state silicon gel composite to the cavity of described IGBT module.
Vacuum chamber provides a vacuum environment for IGBT module and IGBT module package equipment, makes the IGBT module can avoid the air that mixes in encapsulation process, guaranteed encapsulation finish after the performance of IGBT module.
The IGBT module encapsulation method flow chart that Fig. 3 provides for the embodiment of the invention three.
Referring to Fig. 3, the embodiment of the invention three provides a kind of IGBT module encapsulation method, and it may further comprise the steps:
Step S1, in vacuum environment, use the described IGBT module package of any embodiment of the present invention equipment to inject the liquid-state silicon gel composite in the cavity of IGBT module, wherein, the liquid-state silicon gel composite is base-material and the catalyst that mixes;
Among the step S1, in vacuum environment, use the described IGBT module package of any embodiment of the present invention equipment, because IGBT module package equipment has first piston and second piston, just can accurately control the ratio of base-material and catalyst by the volume ratio that first piston and second piston are set, thus can guarantee to encapsulate finish after the performance of IGBT module.The liquid-state silicon gel composite can mix in advance, inserts vacuum environment then and carries out can, also can mix the back can in a vacuum.
Step S2, in the cavity of IGBT module, fill up described liquid-state silicon gel composite after, the IGBT module kept the time of setting in vacuum environment.
The effect of step S2 is to eliminate the air that may mix in the IGBT inside modules liquid-state silicon gel composite.
Technique scheme encapsulates the IGBT module in a vacuum, because the effect of atmospheric pressure, the air that mixes in the liquid-state silicon gel composite can discharge; After filling up the liquid-state silicon gel composite, the time that the IGBT module is kept setting in vacuum environment, also because the effect of atmospheric pressure, can further eliminate the air that may mix in the liquid-state silicon gel composite, so above-mentioned two steps can effectively be eliminated the air that mixes in the liquid-state silicon gel composite, improve the performance of IGBT module whole.Adopt the IGBT module of said method can, product performance index unanimity, good reproducibility, reliable in quality.
The IGBT module encapsulation method flow chart that Fig. 4 provides for the embodiment of the invention four.
Referring to Fig. 4, the invention process two is on the technical scheme basis of embodiment three, and preferably, step S1 comprises the steps:
Step S11, the IGBT module is placed in the vacuum environment;
Among the step S11, can earlier the IGBT module be placed in the space of sealing, extract the air in the space again out.
Step S12, pour into liquid-state silicon gel composite via the embedding mouth to the IGBT module in the mode of repeatedly embedding, wherein, the time interval between per twice embedding is 30 seconds-60 seconds.
In the practical application, may offer a more than embedding mouth on the shell of certain model IGBT module, this moment optionally, the quantity of embedding mouth is a plurality of, during each embedding, from each embedding mouth, pour into the liquid-state silicon gel composite successively, to be provided with M embedding mouth and N embedding mouth, be for five times example with embedding, the embedding process is as follows:
Each embedding operation all is: inject the liquid-state silicon gel composite from M embedding mouth earlier, the amount that pours into can be for always treating 1/10 of filling amount; Inject the liquid-state silicon gel composite from N embedding mouth again, the amount that pours into can be the same.
Above-mentioned embedding operation is carried out five times, to finish the implant operation of liquid-state silicon gel composite.
In order to guarantee IGBT module package effect, further, the vacuum degree of vacuum environment is 5mbar-100mbar, and temperature is 15 ℃-30 ℃.
In the embedding process, the control of base-material, catalyst and ambient temperature also is the key of dosing technology, and polymerization time of origin and speed are the functions of temperature after base-material and the catalyst mix, i.e. the length of the Embedding Material term of validity and temperature correlation.Therefore the temperature of embedding environment should need be controlled in suitable scope, in order in the embedding term of validity, finish, be avoided influencing the embedding quality.
The embedding process is wanted omnidistance high vacuum, vacuum degree range of choice 5mbar-100mbar, and the air of stopping in the equipment is sneaked into the silicon gel.Need to prove, when embedding IGBT module, make the suitable frock of research and development according to actual conditions, to being convenient to the IGBT module is accurately located, in the IGBT module rational embedding mouth is set, can guarantee that also the dead angle does not appear in module embedding silicon gel.
Particularly, time of keeping in vacuum environment of IGBT module can be 15 minutes-25 minutes.The above-mentioned retention time namely can fully be discharged the air of liquid-state silicon gel composite, is unlikely to again too to prolong the encapsulation time, influences packaging efficiency.
The IGBT module encapsulation method that technique scheme provides adopts repeatedly embedding, can guarantee that like this liquid-state silicon gel composite in the even embedding of IGBT inside modules, covers devices such as chip fully, guarantees the electric property of product.After finishing IGBT module embedding liquid-state silicon gel composite, module renewed at the vacuum environment relaying put the regular hour, having guaranteed does not have entrained air in the liquid-state silicon gel composite.
It should be noted that at last: above each embodiment is not intended to limit only in order to technical scheme of the present invention to be described; Although the present invention has been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment puts down in writing, and perhaps some or all of technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. an IGBT module package equipment is characterized in that, comprising:
First piston has first piston bar and first cylinder body, offers first charging aperture and first discharging opening on described first cylinder body, and described first cylinder body is used for ccontaining base-material;
Second piston has second piston rod and second cylinder body, offers second charging aperture and second discharging opening on described second cylinder body, and described second cylinder body is used for ccontaining catalyst;
Briquetting is fixed with described first piston bar and second piston rod, with under the drive of described briquetting, makes described first piston bar and second piston rod rise simultaneously or descend;
Mix sebific duct, have the entrance and exit of mutual perforation, described entrance is communicated with described first discharging opening and second discharging opening, and described outlet is used for dispensing liquid silicon gel composite, and wherein, the liquid-state silicon gel composite is base-material and the catalyst that mixes.
2. IGBT module package equipment according to claim 1 is characterized in that,
Described mixed sebific duct inside is helical form, and along the direction from described entrance to outlet, spiral is more and more intensive.
3. IGBT module package equipment according to claim 1 is characterized in that, also comprises:
First barrel is communicated with described first charging aperture, is used for to the described base-material of described first cylinder body input;
Second barrel is communicated with described second charging aperture, is used for to the described catalyst of described second cylinder body input.
4. IGBT module package equipment according to claim 3 is characterized in that,
The volume ratio of the ccontaining material of energy is 1: 1.3 in first barrel and second barrel.
5. IGBT module package system is characterized in that:
Comprise vacuum chamber, be provided with the arbitrary described IGBT module package equipment of objective table and claim 1-4 in the described vacuum chamber, described objective table is used for carrying IGBT module to be packaged, and described IGBT module package equipment is used for injecting the liquid-state silicon gel composite to the cavity of described IGBT module.
6. an IGBT module encapsulation method is characterized in that, comprising:
In vacuum environment, right to use requires the arbitrary described IGBT module package equipment of 1-4 to inject the liquid-state silicon gel composite in the cavity of IGBT module, and wherein, the liquid-state silicon gel composite is base-material and the catalyst that mixes;
After in the cavity of IGBT module, filling up described liquid-state silicon gel composite, the IGBT module is kept the time of setting in vacuum environment.
7. IGBT module encapsulation method according to claim 6 is characterized in that, and is described in vacuum environment, injects the liquid-state silicon gel composite in the cavity of IGBT module and comprises:
The IGBT module is placed in the vacuum environment;
Mode with repeatedly embedding pours into the liquid-state silicon gel composite via the embedding mouth to the IGBT module, and wherein, the time interval between per twice embedding is 30 seconds-60 seconds.
8. IGBT module encapsulation method according to claim 7 is characterized in that,
The quantity of described embedding mouth is a plurality of, during each embedding, pours into described liquid-state silicon gel composite successively from each embedding mouth.
9. IGBT module encapsulation method according to claim 7 is characterized in that,
The vacuum degree of described vacuum environment is 5mbar-100mbar, and temperature is 15 ℃-30 ℃.
10. IGBT module encapsulation method according to claim 6 is characterized in that, the time of described setting is 15 minutes-25 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210027604.6A CN103247540B (en) | 2012-02-08 | 2012-02-08 | IGBT module sealed in unit, system and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210027604.6A CN103247540B (en) | 2012-02-08 | 2012-02-08 | IGBT module sealed in unit, system and method |
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| CN103247540A true CN103247540A (en) | 2013-08-14 |
| CN103247540B CN103247540B (en) | 2015-11-25 |
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| CN201210027604.6A Expired - Fee Related CN103247540B (en) | 2012-02-08 | 2012-02-08 | IGBT module sealed in unit, system and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106622883A (en) * | 2016-11-15 | 2017-05-10 | 东莞东聚电子电讯制品有限公司 | Automatic AB glue mixing and supporting mechanism |
| CN111071973A (en) * | 2019-12-22 | 2020-04-28 | 中国电波传播研究所（中国电子科技集团公司第二十二研究所） | Split type under-pressure filling and sealing system applicable to various viscosities and filling and sealing method thereof |
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| US20100117216A1 (en) * | 2008-11-11 | 2010-05-13 | Cyntec Co., Ltd. | Chip package structure |
| CN101764070A (en) * | 2010-01-31 | 2010-06-30 | 中北大学 | Resin adhesive vacuum encapsulation device and process thereof |
| CN201755473U (en) * | 2009-01-08 | 2011-03-09 | 广州通泽机械有限公司 | Mechanical type two-glue mixing mechanism |
| CN102337032A (en) * | 2010-06-11 | 2012-02-01 | 信越化学工业株式会社 | Curable silicone gel composition |
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| US20100117216A1 (en) * | 2008-11-11 | 2010-05-13 | Cyntec Co., Ltd. | Chip package structure |
| CN201755473U (en) * | 2009-01-08 | 2011-03-09 | 广州通泽机械有限公司 | Mechanical type two-glue mixing mechanism |
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Cited By (2)
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| CN106622883A (en) * | 2016-11-15 | 2017-05-10 | 东莞东聚电子电讯制品有限公司 | Automatic AB glue mixing and supporting mechanism |
| CN111071973A (en) * | 2019-12-22 | 2020-04-28 | 中国电波传播研究所（中国电子科技集团公司第二十二研究所） | Split type under-pressure filling and sealing system applicable to various viscosities and filling and sealing method thereof |
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| CN103247540B (en) | 2015-11-25 |
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