CN103246176A - Isolation chamber for isolating laser produced plasma extreme ultraviolet light source fragments - Google Patents
Isolation chamber for isolating laser produced plasma extreme ultraviolet light source fragments Download PDFInfo
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- CN103246176A CN103246176A CN2013101122976A CN201310112297A CN103246176A CN 103246176 A CN103246176 A CN 103246176A CN 2013101122976 A CN2013101122976 A CN 2013101122976A CN 201310112297 A CN201310112297 A CN 201310112297A CN 103246176 A CN103246176 A CN 103246176A
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Abstract
The invention belongs to the application field of laser technologies, and relates to an isolation chamber for isolating laser produced plasma extreme ultraviolet light source fragments. The isolation chamber comprises a rectifier gate and a chamber body, wherein the chamber body consists of a middle columnar part and two rectangular parts on two sides, wherein the middle columnar part is used for mounting an EUV (extreme ultraviolet) ellipsoidal collecting mirror; rectangular flow channels in the horizontal direction are arranged on two sides of the columnar part; the rectangular parts of the chamber body are connected with the columnar part through a curved line; and the rectifier gate is placed in a gas flow inlet position of the chamber body, and is used for regulating the gas flow distribution on a flowing cross section, and arranging buffer gas flow flowing through the chamber body in order. The rectifier gate comprises a horizontal gate and a vertical gate, wherein the horizontal gate can move vertically to adjust the pressure distribution of the gas flow in the vertical direction. Buffer gas being introduced into the chamber body is a gas mixture of hydrogen and argon. The equipment used by the isolation chamber provided by the invention is simple, and is easy to operate and control. The isolation chamber can effectively isolate the pollution of the plasma fragments on the collecting mirror, and has important meanings on prolonging the service life of an optical system and developing EUV photolithography.
Description
Technical field
The invention belongs to the laser technology application, more specifically, relate to a kind of separate cavities for isolation laser plasma extreme ultraviolet light source chip.
Background technology
From chip technology development so far, the reduction process yardstick that can carve is one of core theme always as much as possible, and has finally produced extreme ultraviolet photoetching technique (EUVL, Extreme Ultra Violet Lithography).This wherein, a considerable link is exactly the generation of extreme ultraviolet (EUV, Extreme Ultra Violet) light source.
The producing method of EUV light source mainly contains three kinds of laser plasma, gas discharge plasma and synchrotron radiation light sources etc.Wherein laser plasma (LPP, Laser Produced Plasma) is to produce the EUV radiation with the laser bombardment target, and has abundant grenz ray.Because EUVL is at the photoetching technique below the 22nm, so very high to the requirement of laser plasma light source, the most key is high-frequency, narrow bandwidth and does not have chip, and can this is directly connected to whole etching system reach the volume production requirement.
Laser after the bombardment target body, when producing the EUV radiation also can to around the sputter plasma chip.Chip is splashed to EUV and collects on the mirror and can produce pollution to collecting mirror, and then influences the life-span of reflection efficiency and the optical system of EUV radiation.Effective isolation plasma chip improves and light-source system serviceable life the development of EUVL is significant.
In the EUV of laser center incident light-source system, the researcher collects the rotating wheel that a tape channel is set between mirror and the target body at EUV, the passway has stopped that along with the continuation of passing through of laser is rotated the chip that thereupon produces because of the laser bombardment target body is splashed on the collection mirror (patent documentation CN1959463A).Although this method can be isolated chip to a certain extent, to having relatively high expectations synchronously of laser time of incidence and passage rotation, and the runner of collecting before the mirror is bigger to the collection influence of EUV radiation.Also there is the researcher to use buffer gas to intercept debris contamination and collects mirror (patent documentation CN102119365A).Use argon gas that target body is carried out thermalization in this method, re-use hydrogen stream and slow down chip to collecting the mirror motion.Because the injection direction difference of two kinds of gases, and the restriction of inner-cavity structure, air-flow is easy to generate bigger mobile whirlpool, exists chip with the possibility of eddy motion to collection mirror surface.
Summary of the invention
At cylindrical cavity commonly used and the defective of prior art, the object of the present invention is to provide a kind of separate cavities, be used for the isolation of laser plasma extreme ultraviolet light source chip, this separate cavities is intended to impel in the chamber that the buffer gas flow that flows is uniform and stable, pressure gradient is less, the plasma chip is when being slowed down, can flow out cavity in the lump along with the air-flow of motion, can effectively avoid debris contamination EUV to collect mirror.
For achieving the above object, the invention provides a kind of separate cavities for isolation laser plasma chip, it is characterized in that it comprises honeycomb screen and cavity, cavity is connected to form with the both sides rectangle part by the intermediate cylindrical part; Wherein, cylindrical part is used for attaching EUV ellipsoid and collects mirror, both sides are the rectangularl runner of horizontal direction, the cavity rectangle part is divided into curve with cylindrical portion and is connected, honeycomb screen is placed on the air flow inlet position of described cavity, the air-flow that is used for regulating on the flow section distributes, and the buffer gas flow of the regular cavity of flowing through.
Technique scheme can adopt in the following manner a kind of or appoint several the improvement, and the radius of described cylindrical part is R, and R is more than or equal to 300mm, and collects the radius of mirror greater than being installed in EUV ellipsoid in the chamber; The length of described rectangle part is L, and L is the radius more than or equal to described cylindrical part; The fillet radius-of-curvature that is used for the curve that the cavity rectangle part is connected with cylindrical part is R, and angle is 30 °～60 °.
Can further improve as technique scheme, described honeycomb screen comprises horizontal grid sheet and vertical grid sheet, and horizontal grid sheet can distribute with the pressure of regulating the air-flow vertical direction vertically mobile.
Can further improve as technique scheme, described buffer gas flow is the mixed gas of hydrogen and argon gas, and the shared volume of hydrogen is about 10%～90%.
The invention provides the separate cavities for isolation laser plasma extreme ultraviolet light source chip, be specially adapted to the isolation of laser drop tin plasma chip, the equipment of use is simple, easy operating control.Can effectively isolate the plasma chip to collecting the pollution of mirror, significant to improving optical system life-span and development pole ultraviolet photolithographic technology.
Description of drawings
Fig. 1 a is separate cavities synoptic diagram of the present invention.
Fig. 1 b is cavity A-A sectional view of the present invention.
Fig. 2 is honeycomb screen synoptic diagram of the present invention.
Fig. 3 is air current flow synoptic diagram in the cavity of the present invention.
Fig. 4 is that chip of the present invention is isolated the concrete synoptic diagram of implementing, comprising 1, gas-holder, and 2, the inlet pressure operation valve, 3, separate cavities, 4, ellipsoid collects mirror, 5, the top hole pressure operation valve, 6, vacuum pump.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described further.Need to prove at this, understand the present invention for the explanation of these embodiments for helping, but do not constitute limitation of the invention.In addition, below in each embodiment of described the present invention involved technical characterictic just can not make up mutually as long as constitute conflict each other.
Based on the some shortcomings of more existing technology to the isolation existence of laser plasma chip, the invention provides a kind of separate cavities, be specially adapted to isolation laser liquid tin plasma chip.
Fig. 1 a and Fig. 1 b show the shape organigram of separate cavities provided by the present invention.Wherein, Fig. 1 a shows the link position between honeycomb screen and cavity in the separate cavities; Fig. 1 b shows the cross section of described cavity.Cavity is connected to form with the both sides rectangle part by the intermediate cylindrical part.Wherein, but cylindrical part one end attaching EUV ellipsoid is collected mirror, both sides are that (length is L for the rectangularl runner of horizontal direction, L is not less than R), buffer gas enters from a side runner, and (radius is R, and R is not less than 300mm through the cavity cylindrical part, and greater than the radius that is installed in the EUV ellipsoid collection mirror in the chamber), flow out from the opposite side runner.The cavity rectangle part is divided into curve with cylindrical portion and is connected (the fillet radius-of-curvature also is R, and angle is 30 °～60 °), makes that the area of section streamwise variation of air current flow is more even, prevents in the flow process because whirlpool appears in the sudden change of runner.
Fig. 2 shows the grid sheet position of honeycomb screen, comes regular buffer gas flow by level and vertical grid sheet.Horizontal grid sheet can vertically move the pressure of regulating the air-flow vertical direction and distribute, and the air-flow pressure gradient of the feasible cavity circular portion of flowing through is less, and air current flow is even, is easy to slow down the chip of motion and cleans out cavity.
Fig. 3 shows the flow direction of buffer gas in cavity.Buffer gas is the mixed gas of hydrogen and argon gas, and the shared volume of hydrogen is about 10%～90%.Argon gas has bigger kinetic viscosity, and the size bulky grain in the article on plasma body chip has good buffering effect.Gas flows into and the pressure of outflow cavity is about 90Pa and 80Pa respectively, and air-flow cylindrical region (laser irradiation target body produces the zone of EUV radiation) pressure in cavity then is about 100Pa.
This separate cavities can provide the uniform crossflow that flows, and can the chip of sputter be rested in the cavity because of producing the air-flow whirlpool, even moves on the EUV collection mirror.When slowing down the chip motion, can effectively take chip out of cavity, particularly honeycomb screen can be regulated the pressure distribution of air-flow vertical direction, makes that the gas velocity of close cavity inner wall is very fast, is more conducive to the cleaning of chip on the inwall.
Fig. 4 shows the embodiment that separate cavities provided by the invention is used for isolating chip, collects mirror 4, top hole pressure operation valve 5, vacuum pump 6 comprising gas bomb 1, inlet pressure operation valve 2, separate cavities 3, ellipsoid.The incoming flow cushion gas is known from experience elder generation and is formed uniform air flow through the effect of honeycomb screens in the separate cavities 3.Can change the distribution that air-flow pressure in the vertical direction is little in the middle of becoming, two is big by the position of regulating horizontal grid sheet, then the pressure size distribution on the vertical direction is even behind the cylindrical part, gradient is less for air current flow.The even distribution of incoming flow buffer gas pressure is difficult for producing the air-flow whirlpool, is conducive to slow down the plasma chip of motion, and littler to the influence of EUV radiation.That this separate cavities can make the process of laser irradiation target body occur in to flow is stable, in the mixing buffer gas flow environment of pressure distribution uniform; the sputter chip that produces can be owing to the obstruct of movement air flow is slowed down; and the cavity that thereupon flows; prevent debris contamination ellipsoid collection mirror 4; can protect the collection mirror effectively, improve the serviceable life of optical system.
Provided by the invention a kind of for the cavity of isolating the plasma chip in order further to illustrate, below in conjunction with Fig. 4 in detail job step of the present invention is described in detail:
(1) closes inlet pressure operation valve 2, open top hole pressure operation valve 5, open vacuum pump 6, gas in the separate cavities 3 is found time, make air pressure less than 10
-3Pa;
(2) and open the valve of gas-holder 1, regulate two kinds of gases respectively to the pressure ratio (or volume ratio) of appointment, and open inlet pressure operation valve 2.
(3) regulate airflow fence sheet in the honeycomb screen, make air current flow even, vertically pressure distributes and reaches the appointment requirement;
(4) keep vacuum pump to open, regulate inlet pressure operation valve 2 control gas feed average pressures and be about 90Pa, adjust mouth pressure operation valve 5 control gas vent pressure simultaneously and be about 80Pa;
(5) treat that air current flow is stable after, can begin laser irradiation target body and produce the process of EUV radiation.
Those skilled in the art will readily understand; the above only is best implementation step of the present invention; not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., all should be included in protection scope of the present invention.
Claims (6)
1. one kind is used for isolation laser plasma extreme ultraviolet light source chip separate cavities, it is characterized in that it comprises honeycomb screen and cavity, and cavity is connected to form with the both sides rectangle part by the intermediate cylindrical part; Wherein, cylindrical part is used for attaching EUV ellipsoid and collects mirror, both sides are the rectangularl runner of horizontal direction, the cavity rectangle part is divided into curve with cylindrical portion and is connected, honeycomb screen is placed on the air flow inlet position of described cavity, is used for regulating the air-flow distribution on the flow section, the buffer gas flow of the regular cavity of flowing through.
2. according to claim 1ly it is characterized in that for isolation laser plasma extreme ultraviolet light source chip separate cavities the radius of described cylindrical part is R, R is more than or equal to 300mm, and collects the radius of mirror greater than being installed in EUV ellipsoid in the chamber.
3. according to claim 2ly it is characterized in that for isolation laser plasma extreme ultraviolet light source chip separate cavities the length of described rectangle part is L, L is the radius more than or equal to described cylindrical part.
4. according to claim 2ly it is characterized in that for isolation laser plasma extreme ultraviolet light source chip separate cavities that the fillet radius-of-curvature that is used for the curve that the cavity rectangle part is connected with cylindrical part is R, angle is 30 °～60 °.
5. according to arbitrary described for isolation laser plasma extreme ultraviolet light source chip separate cavities in the claim 1 to 4, it is characterized in that, described honeycomb screen comprises horizontal grid sheet and vertical grid sheet, and horizontal grid sheet can distribute with the pressure of regulating the air-flow vertical direction vertically mobile.
6. describedly it is characterized in that for isolation laser plasma extreme ultraviolet light source chip separate cavities described buffer gas flow is the mixed gas of hydrogen and argon gas according to arbitrary in the claim 5, the shared volume of hydrogen is about 10%～90%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310112297.6A CN103246176B (en) | 2013-04-02 | 2013-04-02 | Isolation chamber for isolating laser produced plasma extreme ultraviolet light source fragments |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310112297.6A CN103246176B (en) | 2013-04-02 | 2013-04-02 | Isolation chamber for isolating laser produced plasma extreme ultraviolet light source fragments |
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| CN103246176A true CN103246176A (en) | 2013-08-14 |
| CN103246176B CN103246176B (en) | 2015-01-28 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108418083A (en) * | 2018-02-08 | 2018-08-17 | 北京科益虹源光电技术有限公司 | A kind of window structure and excimer laser for laser |
| CN110967937A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Method for operating an extreme ultraviolet light generating device and extreme ultraviolet radiation generating device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6153877A (en) * | 1997-07-11 | 2000-11-28 | Oki Electric Industry Co. Ltd. | Projection exposure apparatus |
| CN1514305A (en) * | 2002-12-23 | 2004-07-21 | Asml荷兰有限公司 | Manufacturing method of photoctching equipment having residue inhibiting device and device |
| JP2004361863A (en) * | 2003-06-09 | 2004-12-24 | Nikon Corp | Method for storing optical element |
| JP2006049654A (en) * | 2004-08-06 | 2006-02-16 | Nikon Corp | Storing/installation method of optical element for extreme ultraviolet ray exposure device |
| CN202719916U (en) * | 2012-08-17 | 2013-02-06 | 日立造船株式会社 | Rectifier device for gas processing container |
-
2013
- 2013-04-02 CN CN201310112297.6A patent/CN103246176B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6153877A (en) * | 1997-07-11 | 2000-11-28 | Oki Electric Industry Co. Ltd. | Projection exposure apparatus |
| CN1514305A (en) * | 2002-12-23 | 2004-07-21 | Asml荷兰有限公司 | Manufacturing method of photoctching equipment having residue inhibiting device and device |
| JP2004361863A (en) * | 2003-06-09 | 2004-12-24 | Nikon Corp | Method for storing optical element |
| JP2006049654A (en) * | 2004-08-06 | 2006-02-16 | Nikon Corp | Storing/installation method of optical element for extreme ultraviolet ray exposure device |
| CN202719916U (en) * | 2012-08-17 | 2013-02-06 | 日立造船株式会社 | Rectifier device for gas processing container |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108418083A (en) * | 2018-02-08 | 2018-08-17 | 北京科益虹源光电技术有限公司 | A kind of window structure and excimer laser for laser |
| CN110967937A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Method for operating an extreme ultraviolet light generating device and extreme ultraviolet radiation generating device |
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| CN103246176B (en) | 2015-01-28 |
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Granted publication date: 20150128 Termination date: 20190402 |