CN103240220A - Piezoelectric array ultrasonic transducer - Google Patents
Piezoelectric array ultrasonic transducer Download PDFInfo
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- CN103240220A CN103240220A CN201310169360XA CN201310169360A CN103240220A CN 103240220 A CN103240220 A CN 103240220A CN 201310169360X A CN201310169360X A CN 201310169360XA CN 201310169360 A CN201310169360 A CN 201310169360A CN 103240220 A CN103240220 A CN 103240220A
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Abstract
The invention provides a piezoelectric array ultrasonic transducer, and belongs to the technical field of transducers and micro-processing. The piezoelectric array ultrasonic transducer comprises array (distributed) type upper electrodes, an integrated common lower electrode, piezoelectric films, insulation layers, array elements, a supporting layer, and monocrystalline silicon basements. The piezoelectric films are arranged between the upper electrodes and the lower electrode. The insulation layers are arranged among the upper electrode, the lower electrode and the piezoelectric films. The array elements arranged on the insulation layers comprises acoustic energy transmission and absorption cavities and vibration films at the bottoms of the array elements. The monocrystalline silicon basements are provided with vibration cavities. By the arrangement of adopting the common lower electrode and the array (distributed) type upper electrodes, same or different thicknesses are adopted in the vibration films at the bottoms of the array elements (the acoustic energy transmission and absorption cavities) and the piezoelectric films, so that the array elements can operate under either a same working frequency or different working frequencies, comprehensive performances of sensitivity and working bandwidth and stability of the comprehensive performances of the transducer can be improved effectively, and the piezoelectric array ultrasonic transducer has the advantages that integration is good, packaging is facilitated, industrial production is benefited and the like.
Description
Technical field
The invention belongs to transducer and micro fabrication technical field, a kind of piezoelectric type array ultrasonic transducer that utilizes micro-processing technology to produce particularly, the audio directional loudspeaker that this piezoelectric type array ultrasonic transducer both can be used as on the mobile phone is used, also can be used as a kind of novel sensor and the excusing from death signal is surveyed in to ultrasonic, optoacoustic and thermal acoustic imaging system in the medical electronics field, in Smart Home, be used for burglary-resisting system.
Background technology
Ultrasonic transducer among the present invention is as having caused the concern of external many scientific research institutions based on the novel sensor technology of micro-processing technology, under the historical background that information industry and Internet of Things industry develop rapidly now, it has also caused the great attention of commercial field especially.Piezoelectric type ultrasonic transducer device based on micro-processing technology can be used as audio directional loudspeaker at mobile phone, can be applied in the medical electronics field in ultrasonic, optoacoustic and the thermal acoustic imaging system excusing from death signal is surveyed, it is medium to be used for burglary-resisting system at Smart Home.
The Nanyang Technolohy University is at " based on the micro-machined ultrasonic transducer arrays device (Micromachined ultrasonic transducers and arrays baded on piezoelectric thick film) of piezoelectric thick " (" Appl.Phys.A. " 2008, the 91st phase, P107 – 117, author: Zhihong Wang, Jianmin Miao, Weiguang Zhu) a kind of ultrasonic transduction array device is disclosed in the literary composition, this device is made of monocrystalline silicon/silicon/carbon dioxide silicon/low temperature oxide/bottom electrode/piezoelectric membrane/polyimides/top electrode, each array element is the cavity of the shape of falling the tetragonous cone table, the structure and parameter of each array element is all identical, so operating frequency is also all identical; In addition, this device adopts arranging of electrode and is total to (integral type) top electrode and the separate set-up mode of bottom electrode, and at the edge of each bottom electrode covering one deck piezoelectric membrane, therefore the piezoelectric membrane easy fracture that this kind mode arranges and cause short circuit between the upper and lower electrode also needs to adopt Kapton carry out isolation processing between upper and lower electrode; The lead-out wire of each array element bottom electrode is by after the Kapton on the bottom electrode of each array element next door and piezoelectric membrane being etched an electrode wires fairlead, the bottom electrode lead-out wire is drawn from the upper surface of each array element again in the device.This array energy transducer is because employing is total to the top electrode setting, a very integral body powers on, the wire laying mode of top electrode and bottom electrode space overlap in addition, easily produce parasitic capacitance, so this array transducer is bigger to device sensitivity and performance impact thereof at the set-up mode of upper and lower electrode; Each bottom electrode lead lead-out mode will have a strong impact on the encapsulation of device and the security in the use again; In addition, each array element is worked under identical operating frequency in this device, and not only its bandwidth is narrower but also operating frequency is also lower.Thereby this array energy transducer exists that sensitivity is low, narrow bandwidth, stability and combination property are poor, and the encapsulation difficulty is difficult to disadvantages such as industrialization production.
Summary of the invention
The objective of the invention is the disadvantage at the background technology existence, improve a kind of piezoelectric type array ultrasonic transducer of design, this transducer is by adjusting set-up mode and the electrode structure of upper and lower electrode, and each array element can be worked under different operating frequencies, when improving the transducer array bandwidth of operation, effectively improve the combination property such as sensitivity, bandwidth of transducer and the stability of performance, and good integrity, encapsulation are convenient, are conducive to purposes such as industrialization production.
Solution of the present invention is on basis of background technology, background technology is adopted the set-up mode of top electrode (monoblock type top electrode) altogether and separate bottom electrode, change the set-up mode of (being total to) bottom electrode of array (distribution) formula top electrode and integral type into, and with the vibrating membrane of each array element (sound wave emission and reception cavity) bottom and piezoelectric membrane adopt identical or different thickness be located at respectively corresponding top electrode on, lower surface, simultaneously the view field (be the bottom electrode zone of top electrode lead-out wire and bottom electrode space overlap part) of top electrode lead-out wire on bottom electrode etched away, make it form the wire breach corresponding with the top electrode lead-out wire at bottom electrode, to prevent the generation of parasitic capacitance; The present invention namely with this improve transducer array bandwidth of operation, make each array element can adopt different operating frequencies, and effectively improve sensitivity, the bandwidth class combination property of transducer, thereby realize its goal of the invention.Thereby piezoelectric type array ultrasonic transducer of the present invention comprises upper and lower electrode, be located at the piezoelectric membrane between the upper and lower electrode, by sound wave emission and reception cavity be positioned at each array element that the vibrating membrane of its bottom is formed, be located at the insulating barrier between upper and lower electrode and each piezoelectric membrane, supporting layer, the monocrystal silicon substrate of band vibration cavity, key is that bottom electrode is the common bottom electrode of integral type, and very array (distribution) the formula top electrode that powers on is the wire breach in the view field of bottom electrode upper edge top electrode lead-out wire; Supporting layer is fixed on the monocrystal silicon substrate of band vibration cavity, the common bottom electrode of integral type then places on the supporting layer, and each piezoelectric membrane is the piezoelectric membrane of same thickness or different-thickness, each top electrode then is close to fixing with corresponding piezoelectric membrane center, insulating barrier is coated on, between bottom electrode and each piezoelectric membrane, apply a layer insulating again after each top electrode lead-out wire is drawn from insulating barrier top the top electrode lead-out wire is fixed in the insulating barrier, on insulating barrier, etch sound wave emission and the reception cavity of each array element then over against each top electrode and piezoelectric membrane center respectively and be positioned at the sound wave emission and reception cavity bottom thickness vibrating membrane identical or inequality; Finally by the vacuum packing.
The above-mentioned insulating barrier of being located between upper and lower electrode and each piezoelectric membrane, its material are polyimides, lucite (PMMA) or acrylonitrile-butadiene-styrene (ABS) (ABS).And describedly on insulating barrier, etch sound wave emission and the reception cavity of each array element over against each top electrode and piezoelectric membrane center respectively and be positioned at the sound wave emission and reception cavity bottom thickness vibrating membrane identical or inequality, wherein acoustic energy transmission and absorbing cavity are the cavity of the shape of falling the tetragonous cone table, and the thickness of cavity bottom vibrating membrane is 0.5-50 μ m.Described supporting layer is silica or monocrystalline silicon.
The present invention is owing to adopted the set-up mode of common bottom electrode and array (distribution) formula top electrode arranging of upper and lower electrode, and with the upper and lower surface that vibrating membrane and the identical or different thickness of piezoelectric membrane employing of each array element (sound wave emission and reception cavity) bottom are located at corresponding top electrode respectively, offered the wire breach corresponding with the top electrode lead-out wire at bottom electrode simultaneously; Thereby each array element can be worked under different operating frequencies, and avoided the generation of parasitic capacitance between top electrode lead-out wire and the bottom electrode.Thereby the present invention have each array element not only can under the identical operating frequency, but also can under different operating frequencies, work, improve simultaneously effectively the combination property such as sensitivity, bandwidth of operation of transducer and the stability of performance, and the good integrity of device, encapsulation are convenient, are conducive to characteristics such as industrialization production.
Description of drawings
Fig. 1 is piezoelectric type array ultrasonic transducer architecture schematic diagram of the present invention (A-A view);
Fig. 2 is the vertical view of Fig. 1;
Fig. 3, Fig. 4 respectively receive photoacoustic signal sequential chart that (collection) arrive to same absorber by 1.25MHz array element and 2.9MHz array element for specific embodiment of the invention array ultrasonic transducer;
Among the figure: 1. array element, 2. top electrode, 2-1. top electrode joint, 2-2. top electrode lead-out wire, 3. piezoelectric membrane, 4. insulating barrier, 5. bottom electrode, 5-1. bottom electrode joint, 6. supporting layer, 7. substrate, 8. vibration cavity.
The specific embodiment
Present embodiment is to adopt the AlN(aluminium nitride) piezoelectric membrane, the array number of array is 2 * 2, wherein two is example for 1.25MHz array element, two for the ultrasonic transducer of 2.9MHz array element: the monocrystalline silicon of (growing * wide * thick) 10 * 10 * 0.25mm is adopted in substrate 7, set each vibration cavity 8 is (long * wide * thick) 0.18 * 0.18 * 0.25mm on it, and the vibration cavity 8 on it is (long * wide * thick) 0.18 * 0.18 * 0.25mm(2.9MHz array element) and 0.21 * 0.21 * 0.25mm(1.25MHz array element); Supporting layer 6 adopts silica, and its thickness is 350nm, and length and width is all identical with substrate 7; Bottom electrode 5 is laterally long identical with substrate, and vertically wide is 7mm, and thickness is 280nm, material is the platinum titanium alloy, magnetron sputtering is on silica supporting layer 6, and the wire breach corresponding with the top electrode lead-out wire is wide to be 50 μ m, and length is identical with the corresponding projection of top electrode lead-out wire on bottom electrode; Piezoelectric membrane 3 is (long * wide) 250 * 250 μ m, and thickness is divided into 0.7 μ m(1.25MHz array element) and 1.1 μ m(2.9MHz array elements), respectively be 2, arrange over against the vibration cavity center; Each top electrode 2 is respectively (long * wide * thick) 120 * 120 * 0.18 μ m(2.9MHz array element) and 140 * 140 * 0.18 μ m(1.25MHz array element), respectively be 2, top electrode lead-out wire 2-2 width is 10 μ m, thick 0.18 μ m, be to apply the insulating barrier that a bed thickness is 0.5 μ m again after draw on the insulating barrier top of 14.5 μ m from thickness, the length and width of insulating barrier 4 is all identical with substrate, and thickness is 15 μ m; On insulating barrier 4, etch the acoustic energy transmission of each array element 1 and the vibrating membrane of absorbing cavity and bottom thereof over against each top electrode and piezoelectric membrane center then, sound wave emission in each array element 1 and the upper base of reception cavity are (long * wide) 230 * 230 μ m, going to the bottom is (long * wide) 200 * 200 μ m, be respectively 13.86 μ m(1.25MHz array elements deeply), 13.46 μ m(2.9MHz array elements), vibration thickness in bottom is respectively 4.01 μ m(1.25MHz array elements), 4.41 μ m(2.9MHz array elements); Finally by the vacuum packing.。
With array ultrasonic transducer and the supporting use of optoacoustic dislocation scanning and imaging system of present embodiment made, photoacoustic signal is surveyed experiment: Figure 3 shows that the photoacoustic signal sequential chart that two 1.25MHz array elements detect in the ultrasound transducer array; Figure 4 shows that the photoacoustic signal sequential chart that two 2.9MHz array elements detect in the ultrasound transducer array.
Claims (4)
1. piezoelectric type array ultrasonic transducer, comprise upper and lower electrode, be located at the piezoelectric membrane between the upper and lower electrode, by sound wave emission and reception cavity be positioned at each array element that the vibrating membrane of its bottom is formed, be located at the insulating barrier between upper and lower electrode and each piezoelectric membrane, supporting layer, the monocrystal silicon substrate of band vibration cavity, it is characterized in that bottom electrode is the common bottom electrode of integral type, and the very array top electrode that powers on, is the wire breach in the view field of bottom electrode upper edge top electrode lead-out wire; Supporting layer is fixed on the monocrystal silicon substrate of band vibration cavity, the common bottom electrode of integral type then places on the supporting layer, and each piezoelectric membrane is the piezoelectric membrane of same thickness or different-thickness, each top electrode then is close to fixing with corresponding piezoelectric membrane center, insulating barrier is coated on, between bottom electrode and each piezoelectric membrane, apply a layer insulating again after each top electrode lead-out wire is drawn from insulating barrier top the top electrode lead-out wire is fixed in the insulating barrier, on insulating barrier, etch sound wave emission and the reception cavity of each array element then over against each top electrode and piezoelectric membrane center respectively and be positioned at the sound wave emission and reception cavity bottom thickness vibrating membrane identical or inequality; Finally by the vacuum packing.
2. by the described piezoelectric type array ultrasonic of claim 1 transducer, it is characterized in that the described insulating barrier of being located between upper and lower electrode and each piezoelectric membrane, its material is polyimides, lucite or acrylonitrile-butadiene-styrene (ABS).
3. by the described piezoelectric type array ultrasonic of claim 1 transducer, it is characterized in that describedly on insulating barrier, etching sound wave emission and the reception cavity of each array element over against each top electrode and piezoelectric membrane center respectively and being positioned at the sound wave emission and reception cavity bottom thickness vibrating membrane identical or inequality, wherein acoustic energy transmission and absorbing cavity are the cavity of the shape of falling the tetragonous cone table, and the thickness of cavity bottom vibrating membrane is 0.5-50 μ m.
4. by the described piezoelectric type array ultrasonic of claim 1 transducer, it is characterized in that described supporting layer is silica or monocrystalline silicon.
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104510500A (en) * | 2013-09-30 | 2015-04-15 | 精工爱普生株式会社 | Ultrasonic device, probe, electronic device, and ultrasonic imaging apparatus |
| CN104510496A (en) * | 2013-09-30 | 2015-04-15 | 精工爱普生株式会社 | Ultrasonic device, probe, electronic equipment, and ultrasonic image device |
| CN105848791A (en) * | 2013-12-31 | 2016-08-10 | 阿西斯特医疗系统有限公司 | Ultrasound transducer stack |
| CN106028942A (en) * | 2013-12-11 | 2016-10-12 | 富士胶片戴麦提克斯公司 | Flexible micromachined transducer device and method for fabricating same |
| CN107078713A (en) * | 2014-09-30 | 2017-08-18 | 株式会社村田制作所 | Acoustic wave device and its manufacture method |
| CN108447979A (en) * | 2018-03-08 | 2018-08-24 | 清华大学 | Piezoelectric film sensor and preparation method thereof |
| CN109244232A (en) * | 2018-09-13 | 2019-01-18 | 徐景辉 | MEMS PZT (piezoelectric transducer) and production method |
| CN110560352A (en) * | 2019-08-15 | 2019-12-13 | 武汉大学 | Frequency-adjustable ultrasonic sensor array based on Helmholtz resonant cavity |
| CN110572756A (en) * | 2019-09-11 | 2019-12-13 | 京东方科技集团股份有限公司 | Directional film transducer, preparation method thereof and loudspeaker |
| US10553776B2 (en) | 2011-11-18 | 2020-02-04 | Acist Medical Systems, Inc. | Ultrasound transducer and processing methods thereof |
| CN111012318A (en) * | 2020-01-18 | 2020-04-17 | 四川知周光声医疗科技有限公司 | Surface focusing array detector and system for photoacoustic breast imaging |
| CN111182422A (en) * | 2018-11-13 | 2020-05-19 | 乐金显示有限公司 | Display device |
| CN111227832A (en) * | 2020-02-13 | 2020-06-05 | 重庆邮电大学 | Thermoacoustic tomography system and method for finger joint disease diagnosis |
| CN113497594A (en) * | 2020-04-08 | 2021-10-12 | 诺思(天津)微系统有限责任公司 | Single crystal bulk acoustic wave resonator, method for manufacturing the same, filter, and electronic device |
| CN113766977A (en) * | 2019-04-30 | 2021-12-07 | 荷兰应用自然科学研究组织Tno | Acoustic piezoelectric membrane transducer array with localized membrane vibrations |
| CN114732356A (en) * | 2022-03-07 | 2022-07-12 | 电子科技大学 | Miniature wearable photoacoustic signal acquisition system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5655276A (en) * | 1995-02-06 | 1997-08-12 | General Electric Company | Method of manufacturing two-dimensional array ultrasonic transducers |
| JPH1032454A (en) * | 1996-07-15 | 1998-02-03 | Olympus Optical Co Ltd | Micro piezoelectric vibrator |
| WO2007095390A2 (en) * | 2006-02-14 | 2007-08-23 | University Of Florida Research Foundation, Inc. | Method and apparatus for imaging utilizing an ultrasonic imaging sensor array |
| CN101583062A (en) * | 2009-06-26 | 2009-11-18 | 电子科技大学 | Array micro audio directional transducer |
| US8076821B2 (en) * | 2004-02-27 | 2011-12-13 | Georgia Tech Research Corporation | Multiple element electrode cMUT devices and fabrication methods |
-
2013
- 2013-05-09 CN CN201310169360.XA patent/CN103240220B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5655276A (en) * | 1995-02-06 | 1997-08-12 | General Electric Company | Method of manufacturing two-dimensional array ultrasonic transducers |
| JPH1032454A (en) * | 1996-07-15 | 1998-02-03 | Olympus Optical Co Ltd | Micro piezoelectric vibrator |
| US8076821B2 (en) * | 2004-02-27 | 2011-12-13 | Georgia Tech Research Corporation | Multiple element electrode cMUT devices and fabrication methods |
| WO2007095390A2 (en) * | 2006-02-14 | 2007-08-23 | University Of Florida Research Foundation, Inc. | Method and apparatus for imaging utilizing an ultrasonic imaging sensor array |
| CN101583062A (en) * | 2009-06-26 | 2009-11-18 | 电子科技大学 | Array micro audio directional transducer |
Non-Patent Citations (2)
| Title |
|---|
| ZHIHONG WANG ET AL: "Micromachined ultrasonic transducers and arrays based on piezoelectric thick film", 《APPL.PHYS.A.》 * |
| 富迪 等: "MEMS压电超声换能器二维阵列的制备方法", 《加工、测量与设备》 * |
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| US10553776B2 (en) | 2011-11-18 | 2020-02-04 | Acist Medical Systems, Inc. | Ultrasound transducer and processing methods thereof |
| CN104510496B (en) * | 2013-09-30 | 2021-04-09 | 精工爱普生株式会社 | Ultrasonic device, probe, electronic apparatus, and ultrasonic imaging apparatus |
| CN104510500A (en) * | 2013-09-30 | 2015-04-15 | 精工爱普生株式会社 | Ultrasonic device, probe, electronic device, and ultrasonic imaging apparatus |
| US10517566B2 (en) | 2013-09-30 | 2019-12-31 | Seiko Epson Corporation | Ultrasonic device, ultrasonic probe, electronic equipment, and ultrasonic image device |
| CN104510496A (en) * | 2013-09-30 | 2015-04-15 | 精工爱普生株式会社 | Ultrasonic device, probe, electronic equipment, and ultrasonic image device |
| US10586912B2 (en) | 2013-12-11 | 2020-03-10 | Fujifilm Dimatix, Inc. | Method for fabricating flexible micromachined transducer device |
| CN106028942B (en) * | 2013-12-11 | 2019-08-16 | 富士胶片戴麦提克斯公司 | Flexible micromechanics transducer device and its manufacturing method |
| CN106028942A (en) * | 2013-12-11 | 2016-10-12 | 富士胶片戴麦提克斯公司 | Flexible micromachined transducer device and method for fabricating same |
| CN105848791A (en) * | 2013-12-31 | 2016-08-10 | 阿西斯特医疗系统有限公司 | Ultrasound transducer stack |
| CN107078713A (en) * | 2014-09-30 | 2017-08-18 | 株式会社村田制作所 | Acoustic wave device and its manufacture method |
| CN108447979A (en) * | 2018-03-08 | 2018-08-24 | 清华大学 | Piezoelectric film sensor and preparation method thereof |
| CN108447979B (en) * | 2018-03-08 | 2019-09-20 | 清华大学 | Piezoelectric film sensor and preparation method thereof |
| CN109244232B (en) * | 2018-09-13 | 2023-07-04 | 徐景辉 | Piezoelectric transducer of micro-electromechanical system and manufacturing method |
| CN109244232A (en) * | 2018-09-13 | 2019-01-18 | 徐景辉 | MEMS PZT (piezoelectric transducer) and production method |
| CN111182422A (en) * | 2018-11-13 | 2020-05-19 | 乐金显示有限公司 | Display device |
| US10972820B2 (en) | 2018-11-13 | 2021-04-06 | Lg Display Co., Ltd. | Display apparatus |
| US11368771B2 (en) | 2018-11-13 | 2022-06-21 | Lg Display Co., Ltd. | Display apparatus |
| US11770645B2 (en) | 2018-11-13 | 2023-09-26 | Lg Display Co., Ltd. | Display apparatus |
| CN113766977A (en) * | 2019-04-30 | 2021-12-07 | 荷兰应用自然科学研究组织Tno | Acoustic piezoelectric membrane transducer array with localized membrane vibrations |
| CN110560352A (en) * | 2019-08-15 | 2019-12-13 | 武汉大学 | Frequency-adjustable ultrasonic sensor array based on Helmholtz resonant cavity |
| CN110572756A (en) * | 2019-09-11 | 2019-12-13 | 京东方科技集团股份有限公司 | Directional film transducer, preparation method thereof and loudspeaker |
| CN111012318A (en) * | 2020-01-18 | 2020-04-17 | 四川知周光声医疗科技有限公司 | Surface focusing array detector and system for photoacoustic breast imaging |
| CN111227832A (en) * | 2020-02-13 | 2020-06-05 | 重庆邮电大学 | Thermoacoustic tomography system and method for finger joint disease diagnosis |
| CN113497594A (en) * | 2020-04-08 | 2021-10-12 | 诺思(天津)微系统有限责任公司 | Single crystal bulk acoustic wave resonator, method for manufacturing the same, filter, and electronic device |
| CN113497594B (en) * | 2020-04-08 | 2023-10-24 | 诺思(天津)微系统有限责任公司 | Single crystal acoustic resonator, method of manufacturing the same, filter, and electronic apparatus |
| CN114732356A (en) * | 2022-03-07 | 2022-07-12 | 电子科技大学 | Miniature wearable photoacoustic signal acquisition system |
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