CN103237408A - Miniaturized planar electromagnetic bandgap structure with C-shaped grooves - Google Patents
Miniaturized planar electromagnetic bandgap structure with C-shaped grooves Download PDFInfo
- Publication number
- CN103237408A CN103237408A CN2013101334560A CN201310133456A CN103237408A CN 103237408 A CN103237408 A CN 103237408A CN 2013101334560 A CN2013101334560 A CN 2013101334560A CN 201310133456 A CN201310133456 A CN 201310133456A CN 103237408 A CN103237408 A CN 103237408A
- Authority
- CN
- China
- Prior art keywords
- plane
- ebg
- metal
- layer
- shaped grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
Disclosed is a miniaturized planar electromagnetic bandgap structure with C-shaped grooves. Patterns of designed planar EBG (electromagnetic bandgap) units with the C-shaped grooves are periodically etched on a power layer of the traditional double-layer power ground plane structure, a ground layer keeps complete, a power layer, a dielectric layer and a ground layer are respectively arranged on a periodic unit of each planar EBG power ground plane structure with the corresponding C-shaped groove from top to bottom, and metal post arrays are periodically arranged in the dielectric layers of the planar EBG periodic units with the C-shaped grooves. The miniaturized planar electromagnetic bandgap structure has the advantages that an effective dielectric constant of a dielectric layer of a planar EBG with the C-shaped grooves is effectively increased by the aid of SIAD (substrate integrated artificial dielectric) structures, and accordingly the planar EBG structure with the C-shaped grooves is effectively miniaturized.
Description
Technical field
The invention belongs to high speed circuit, Electromagnetic Field and Microwave Technology field, be specifically related to a kind of C type groove plane electro-magnetic bandgap (Electromagnetic Bandgap of miniaturization, be called for short EBG) structure, this structure can be used as the power supply ground level, is used for suppressing the power supply noise of high speed circuit from hundreds of MHz to number GHz.
Background technology
D. Sievenpiper had proposed the inhibition that mushroom-shaped EBG structure also is used for the field of antenna surface wave first in 1999.2002, the simultaneous switching noise (Simultaneous Switching Noise be called for short SSN) of the mushroom-shaped EBG structure applications that R. Abhari and G. V. Eleftheriades propose D. Sievenpiper for the first time in suppressing high speed circuit.In the same year, Telesphor Kamgaing and Omar M. Ramahi have delivered similar achievement in research, have verified that further EBG power supply ground level suppresses the feasibility of high-speed digital system noise.2004, people such as Tzong-Lin Wu proposed plane EBG structure applications in the high speed circuit noise suppressed.Thereupon, domestic and international many researchers have carried out more deep analysis and research to EBG power supply ground level, and have proposed multiple different EBG structure.
Raising along with contemporary electronic systems integrated level and operating rate, the SSN spectrum distribution that high speed circuit produces has risen to ghz band from MHz, traditional decoupling capacitor technology can not satisfy the needs of noise suppressed, must seek suitable method and carry out noise suppressed.The EBG structure can produce electro-magnetic bandgap (stopband) in ghz band, thereby effectively suppresses SSN.
At present, be used for the EBG structure that high speed circuit power supply ground level suppresses noise both at home and abroad and be broadly divided into three classes:
(1) embedded type EBG structure
Embedded type EBG structure the earliest namely is the mushroom-shaped EBG structure that D. Sievenpiper proposes.2004, S. Shahparnia adopted three kinds of different mushroom-shaped EBG structure cascades to suppress SSN with O. M. Ramahi.2006, people such as J. Park proposed a kind of two-fold type EBG structure on the basis of mushroom-shaped EBG structure.2007, people such as Zhang Mushui change into a plurality of via holes with single via hole on mushroom-shaped EBG architecture basics, widened the bandwidth of rejection of noise suppressed, 2012, people such as Chuen-De Wang analyzed the position of via hole to the influence of pore fungus shape EBG structure bandwidth of rejection.
(2) plane EBG structure
Because embedded type EBG structure need increase layer of metal layer and extra via hole between the power supply ground level, complex process, cost are higher, so plane EBG structure has more advantage aspect low-cost.Typical plane EBG structure power supply ground level is the LPC-EBG structure that the Wu Zonglin of Taiwan Univ. professor proposed in 2004.In the same year, people such as J. Choi also propose the plane EBG structure of impedance variable.For the bandwidth of rejection of broadening plane EBG, people such as Wu Zonglin proposed a kind of novel plane EBG structure with L type bridge type connecting line again in 2005.2006, people such as J. Qin adopted snake to substitute L type bridge type connecting line, have further increased the inductance of bridge type connecting line, broadening plane EBG bandwidth of rejection.In addition, domestic and international researcher has also proposed the plane EBG structure of multiple novelty.
(3) mixed type EBG structure
So-called mixed type EBG structure is exactly that a kind of plane EBG structure and another kind of embedded type EBG are combined the new EBG structure of formation, perhaps is used for above-mentioned two big class EBG structures by the lumped capacity inductance element and realizes.In order to improve patch capacitor and inductance, the plane EBG structure that people such as W. McKinzie and K. H. Kim have proposed respectively to have lumped capacitive elements and had the lumped inductance element.People such as Wu Zong Lin proposed a kind of photonic crystal power supply ground level structure in 2006, and the mixed type EBG structure that adopted high-k post and low-k post to constitute the artificial dielectric form in 2007 again.In addition, in addition the mushroom-shaped EBG structure of tradition and plane EBG structure are combined mixed type EBG structure of formation etc.
In sum, the plane EBG structure EBG unit, plane that only the cycle etching designs on power plane or ground level, therefore have and make advantages such as simple, process compatible, processing cost are low, obtained extensive concern and the application study of domestic and international academia and industrial circle.The research difficult point of plane electromagnetic bandgap structure mainly concentrate on the noise suppressed stopband broadening, stopband lower limiting frequency move down and be applied to aspects such as miniaturization technology in the encapsulated circuit, wherein the research of miniaturization technology aspect is less relatively, and along with the trend development of electronic system towards high integration, the miniaturization design seems particularly important.Disclosed miniaturized planar EBG structure mainly contains the miniaturized planar EBG structure that adopts high dielectric constant film and the miniaturized planar EBG structure that increases bridge type connecting line stray inductance at present, and the former increases by cost, and the effect of latter's miniaturization is undesirable.
Summary of the invention
The object of the present invention is to provide a kind of based on the integrated artificial dielectric of substrate (Substrate Integrated Artificial Dielectric, the C type groove plane EBG structure of novel miniaturization SIAD), constitute the power supply ground level by it, can be implemented in that C type groove plane EBG cellar area reduces more than 50% on the noise suppressed stop-band frequency scope basis of invariable.
The technical solution that realizes the object of the invention is: a kind of C type groove plane electromagnetic bandgap structure of miniaturization, comprise bus plane, dielectric layer and ground plane, and the ground plane top is dielectric layer, the dielectric layer top is bus plane; On bus plane, periodically print central metal paster, etching C type groove, print the thin Fang Huan of metal and metal fine bridge; The periphery of each C type groove is equipped with the thin Fang Huan of metal, and receive on the metal patch by the metal fine bridging center, one side of the thin Fang Huan of metal; Periodically stamp the metal column array under metal patch, the bottom of metal column is connected with ground plane, has spacing between the top layer of metal column and the bus plane.
The present invention compared with prior art, its remarkable advantage: the C type groove plane EBG structure of miniaturization of the present invention, utilize the SIAD structure to increase the effective dielectric constant of C type groove plane EBG dielectric layer effectively, thereby effectively realized C type groove plane EBG design of miniization.
Description of drawings
Shown in Figure 1 is the one-period unit of employed C type groove plane EBG structure among the present invention.Figure (a) one-period unit vertical view, the design parameter mark figure of figure (b) one-period unit.
Shown in Figure 2 is the EBG structural cycle unit, C type groove plane of a kind of miniaturization of proposition according to the present invention.Figure (a) one-period unit vertical view, the cross-sectional view of figure (b) one-period unit.
Shown in Figure 3 is power supply ground level structure (Unit 3 * 3) vertical view that proposes according to the present invention.
Shown in Figure 4 is does not have the C type groove plane EBG structure of miniaturization and the dispersion map of the C type groove plane EBG structure of the miniaturization that proposes according to the present invention, the dispersion map of plane EBG before figure (a) miniaturization, the dispersion map of plane EBG after figure (b) miniaturization.
Insertion loss comparison diagram between C type groove plane EBG structure used in the present invention that shown in Figure 5 is and the miniaturization C type groove plane EBG inside configuration port that proposes according to the present invention.
Embodiment
The present invention program is the designed C type groove plane EBG unit pattern (as shown in Figure 1) of etching periodically on the bus plane of the two-layer power supply ground level structure of tradition, and ground plane is kept perfectly, the vertical view of its single periodic unit as shown in Figure 1, the periodic unit of each C type groove plane EBG power supply ground level structure is respectively bus plane, dielectric layer and ground plane from top to bottom.Periodically stamping metal column array (SIAD structure) (unit vertical view and sectional view are as shown in Figure 2) in the dielectric layer of C type groove plane EBG periodic unit is the emphasis of this invention, also is the innovation part.
Below in conjunction with the drawings and specific embodiments miniaturized planar electromagnetic bandgap structure of the present invention is elaborated.
Structure of the present invention is respectively ground plane, dielectric layer and bus plane from down to up, wherein ground plane is complete plane, the EBG unit, C type groove plane that designs of etching periodically on the bus plane, the vertical view of single periodic unit as shown in Figure 1, namely on bus plane, periodically print central metal paster, etching C type groove, print the thin Fang Huan of metal, metal fine bridge, the periphery of C type groove is the thin Fang Huan of metal, and receive on the metal patch by the metal fine bridging center, one side of the thin Fang Huan of metal.Periodically stamp the metal column array in the dielectric layer of each EBG periodic unit, its vertical view and sectional view are as shown in Figure 2.Because the present invention stamps the effective dielectric constant that the metal column (being the SIAD structure) of periodic arrangement can significantly improve dielectric layer in the EBG periodic unit of existing C type groove plane, make the periodic unit area of C type groove plane EBG structure significantly reduce.
Embodiment: be that the power supply ground level of the C type groove plane EBG structure of 400MHz-2.1GHz is example in conjunction with Fig. 1 to Fig. 5 with the stop-band frequency scope, describe the embodiment of structure of the present invention in detail.
Print metal patch [1], etching C type groove [2], the printing thin Fang Huan of metal [3] and metal fine bridge [4] and all cover copper at this printed circuit board (PCB) bottom at 2 layer printed circuit board top layers by following parameter, realize C type groove plane electromagnetic bandgap structure, the cycle size p=20mm of its periodic unit, the gap width s=1mm of C type groove [2], the width w of the thin Fang Huan of metal [3]
r=0.2mm, the width w of metal fine bridge [4]
b=0.4mm, length l
b=6mm; The height of 6 * 6 metal columns [5] is h in the dielectric layer [7]
2=1.4mm, the spacing h between metal column top layer and the bus plane [6]
1=0.2mm, the diameter d=1mm of metal column, metal column period p=3mm.Dielectric layer [7] adopts the FR4 medium, and relative dielectric constant is 4.4, and the loss angle tangent of medium is 0.02, and thickness is h
1+ h
2=1.6mm; The power supply ground level structure of whole miniaturized planar EBG structure is made up of 3 * 3 square periodic units.The place, the lower right corner of metal patch [9], [10] is as input/output port 1 and the port 2 of test noise suppressed stopband of the present invention.The former cycle size p=30mm that does not add the C type groove plane electromagnetic bandgap structure periodic unit of metal column array [5], other physical dimensions are all identical with above-mentioned introducing SIAD design of mini plane EBG structure with material parameter.Compare the C type groove plane electromagnetic bandgap structure that does not add metal column array [5], the present invention program's periodic unit area has reduced 56%.
Claims (2)
1. the C type groove plane electromagnetic bandgap structure of a miniaturization is characterized in that: comprise bus plane [6], dielectric layer [7] and ground plane [8], ground plane [8] top be dielectric layer [7], is bus plane [6] above the dielectric layer [7]; On bus plane [6], periodically print metal patch [1], etching C type groove [2], print the thin Fang Huan of metal [3] and metal fine bridge [4]; The periphery of each C type groove [2] is equipped with the thin Fang Huan of metal [3], and the center, one side of the thin Fang Huan of metal [3] is connected on the metal patch [1] by metal fine bridge [4]; Periodically stamp metal column array [5] under metal patch [1], the bottom of metal column is connected with ground plane [8], and the top layer of metal column and bus plane have spacing between [6].
2. the C type groove plane electromagnetic bandgap structure of miniaturization according to claim 1, it is characterized in that: the material of dielectric layer [7] is FR4, Roger R03003, Roger R04003 or RogerRT/duroid 5870 media.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101334560A CN103237408A (en) | 2013-04-17 | 2013-04-17 | Miniaturized planar electromagnetic bandgap structure with C-shaped grooves |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101334560A CN103237408A (en) | 2013-04-17 | 2013-04-17 | Miniaturized planar electromagnetic bandgap structure with C-shaped grooves |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103237408A true CN103237408A (en) | 2013-08-07 |
Family
ID=48885410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101334560A Pending CN103237408A (en) | 2013-04-17 | 2013-04-17 | Miniaturized planar electromagnetic bandgap structure with C-shaped grooves |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103237408A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894991A (en) * | 2010-07-06 | 2010-11-24 | 上海海事大学 | Microstrip band-reject filter with C-shaped annular conduction band defect structure |
| US20100295633A1 (en) * | 2009-05-22 | 2010-11-25 | Jong Won Yu | Electromagnetic bandgap pattern structure, method of manufacturing the same, and security product using the same |
| CN103002653A (en) * | 2012-11-16 | 2013-03-27 | 南京理工大学 | C-shaped groove plane electromagnetic bandgap (EBG) structure |
-
2013
- 2013-04-17 CN CN2013101334560A patent/CN103237408A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100295633A1 (en) * | 2009-05-22 | 2010-11-25 | Jong Won Yu | Electromagnetic bandgap pattern structure, method of manufacturing the same, and security product using the same |
| CN101894991A (en) * | 2010-07-06 | 2010-11-24 | 上海海事大学 | Microstrip band-reject filter with C-shaped annular conduction band defect structure |
| CN103002653A (en) * | 2012-11-16 | 2013-03-27 | 南京理工大学 | C-shaped groove plane electromagnetic bandgap (EBG) structure |
Non-Patent Citations (1)
| Title |
|---|
| 林叶嵩: "基片集成人工介质阻抗变换器、耦合器的研究", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205071428U (en) | Electromagnetism band gap structure and printed circuit board | |
| CN103427138A (en) | Multilayer hexagonal substrate integrated waveguide filter | |
| CN110191572B (en) | Electromagnetic band gap structure for realizing ultra-wideband suppression of synchronous switching noise | |
| CN108539338B (en) | A kind of a quarter mould substrate integral wave guide filter based on notching construction | |
| US9525198B2 (en) | Cavity filter | |
| CN101399396A (en) | Photonic forbidden band ceramic Sierpinski split antenna used for RFID system | |
| CN109599646B (en) | Packaged planar integrated dual band filter | |
| CN102497729A (en) | Electromagnetic band-gap structure | |
| CN103997311A (en) | 3-D full integration EMI filter based on planar coupling inductor | |
| CN103687281A (en) | Broadband electromagnetic band gap structure | |
| CN1877903A (en) | Hemi-membrane substrate integrated waveguide | |
| CN103687282A (en) | Ultra-wide band electromagnetic band-gap structure | |
| CN101533952A (en) | A ceramic tree fractal dipole antenna with gradually changing dielectric coefficients | |
| CN103647123B (en) | Half mode substrate integration waveguide horizontal symmetrical filter | |
| CN113285197B (en) | Three-dimensional impedance network double-side loaded slow wave substrate integrated waveguide and design method thereof | |
| CN101533953B (en) | Photo strip-gap ceramics Kontol fractal micro-strip antenna for radio frequency identification system | |
| CN103594761B (en) | Substrate integration wave-guide ferrite switch | |
| CN202797211U (en) | Capacitive cross-coupling structure of filter | |
| CN103002653B (en) | A kind of C type groove planar electromagnetic bandgap structure | |
| CN110336103B (en) | Frequency band adjustable filter | |
| CN103237408A (en) | Miniaturized planar electromagnetic bandgap structure with C-shaped grooves | |
| CN104466316A (en) | 2X wave band defect joint structure-half mode substrate integrated waveguide filter | |
| CN114335944B (en) | Gap waveguide with band-pass filtering function | |
| CN1949589B (en) | Half module substrate integrated wave guide ring electric bridge | |
| KR20180027133A (en) | Electromagnetic bandgap structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130807 |