CN103217842B - Dot structure - Google Patents
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- CN103217842B CN103217842B CN201210019086.3A CN201210019086A CN103217842B CN 103217842 B CN103217842 B CN 103217842B CN 201210019086 A CN201210019086 A CN 201210019086A CN 103217842 B CN103217842 B CN 103217842B
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Abstract
The present invention provides a kind of dot structure, including: a first time pixel column, including multiple sub-pixels, it is electrically connected at a scan line; And a second time pixel column, including multiple sub-pixels, wherein this scan line is by the region in the described sub-pixel of this second time pixel column. The present invention utilizes the Heterogeneous Permutation of adjacent sub-pixel to make the scanning line of such as first time pixel column be buried the corresponding region to the dark stricture of vagina of liquid crystal in such as second time pixel column, namely this practice is lighttight metal routing and the liquid crystal dark stricture of vagina of inefficient liquid crystal are combined, and reach to maximize the purpose of penetrance, simultaneously, because of the scanning line that cabling is such as first time pixel column that the pixel electrode of such as second time pixel column strides across, therefore, capacitance coupling effect will not increase, hence it is evident that reducing prior art is make penetrance maximize the side effect supervened.
Description
Technical field
The invention relates to a kind of dot structure, in particular to a kind of high penetration and the dot structure that can effectively control capacitance coupling effect.
Background technology
In the wide viewing angle technology of vertical orientation (verticalalignment, VA), liquid crystal molecule is not good in the efficiency of its out of phase intersection, and the penetrance causing integral panels declines; It addition, in semiconductor processing owing to metal routing is lighttight, also can cause that panel penetrance declines; Generally speaking, meeting optimization penetrance in the design of pixel electrode, it is such as the common recognition of designer by area minimizing not good for liquid crystal efficiency, but, this action often brings the problem in optics taste, such as: capacitance coupling effect is excessive, produce cross talk phenomenon, or positive-negative half-cycle voltage symmetry is excessively poor, cause manufacture production difficulty and promote, yield declines, and product reliability is good etc.
" Feedthrough " and be transistor by element open to element close time produced capacitance coupling effect, because voltage is from high to low (for CMI company), therefore, coupling direction is to be pullled downwards by the voltage of pixel electrode; Liquid crystal molecule can drive under the exchange status of positive-negative half-cycle, it is therefore an objective to loses characteristic originally for preventing liquid crystal molecule polarization; Now, make positive-negative half-cycle symmetry be deteriorated if feedthrough crosses conference, and then derive the problem manufactured in upper and optics taste.
Summary of the invention
One embodiment of the invention, it is provided that a kind of dot structure, including: a first time pixel column, including multiple sub-pixels, it is electrically connected at a scan line; And a second time pixel column, including multiple sub-pixels, wherein this scan line is by the region in the described sub-pixel of this second time pixel column.
The described sub-pixel of this first time pixel column and this second time pixel column is rectangle, rhombus or polygon.
The described sub-pixel of this first time pixel column includes the combination of redness, blueness or green sub-pixel one of them or its.
The described sub-pixel of this second time pixel column includes the combination of redness, blueness or green sub-pixel one of them or its.
This scan line is corresponding to a liquid crystal An Wen district by this region in the described sub-pixel of this second time pixel column.
The described sub-pixel of this second time pixel column is respectively arranged between the described sub-pixel of this first time pixel column, the aspect so that the described sub-pixel of the described sub-pixel of this first time pixel column and this second time pixel column is dislocation arrangement.
Present invention pixel structure more includes a plurality of first holding wire, by the region in the described sub-pixel of this first time pixel column.
Described first holding wire is corresponding to a liquid crystal An Wen district by this region in the described sub-pixel of this first time pixel column.
Present invention pixel structure more includes a plurality of secondary signal line, by the region in the described sub-pixel of this second time pixel column.
Described secondary signal line is corresponding to a liquid crystal An Wen district by this region in the described sub-pixel of this second time pixel column.
Present invention pixel structure more includes a plurality of common electrode, is arranged at the edge of this first time pixel column and the described sub-pixel of this second time pixel column.
Described common electrode indentation or concavo-convex.
This scan line passes through the edge of the described sub-pixel of this first time pixel column, and vertical with described first holding wire.
This scan line is by the center of the described sub-pixel of this second time pixel column.
Present invention pixel structure more includes multiple driving element, and each of which drives element to control first holding wire and a secondary signal line simultaneously.
Present invention pixel structure more includes multiple driving transistor, and wherein said driving electric transistor is connected to the described sub-pixel of this first time pixel column, and is arranged between two adjacent sub-pixels of this second time pixel column.
The present invention utilizes the Heterogeneous Permutation of adjacent (different lines) sub-pixel to make the scanning line (scanline) of such as first time pixel column be buried the corresponding region to the dark stricture of vagina of liquid crystal in such as second time pixel column, namely this practice is combined with the liquid crystal dark stricture of vagina of inefficient liquid crystal by lighttight metal routing (such as scanning line and holding wire), and reach to maximize the purpose of penetrance, simultaneously, because of the scanning line that cabling is such as first time pixel column that the pixel electrode (ITO) of such as second time pixel column strides across, therefore, capacitance coupling effect (" feedthrough ") will not increase, significantly reducing prior art is make penetrance maximize the side effect supervened.
For the above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, it is described in detail below:
Accompanying drawing explanation
Figure 1A is according to one embodiment of the invention, discloses the top view of a kind of dot structure;
Figure 1B is according to one embodiment of the invention, discloses the top view of a kind of dot structure;
Fig. 2 is according to one embodiment of the invention, discloses the top view of a kind of dot structure;
Fig. 3 A is according to one embodiment of the invention, discloses the top view of a kind of dot structure; And
Fig. 3 B is according to one embodiment of the invention, discloses the top view of a kind of dot structure.
Drawing reference numeral:
10,100��dot structure;
12,120��first time pixel column;
14,140��second time pixel column;
15��third time pixel column;
16,20,160,200,21,23,25��sub-pixel;
17��the 4th sub-pixel row;
18,180��the scan line;
19��the 5th sub-pixel row;
22, the edge of 220��sub-pixel;
24,28,240, the center of 280��sub-pixel;
26,260��the first holding wire;
26 ', 260 '��secondary signal line;
30,300��common electrode;
32��drive element;
34,340��driving transistor;
B��blue sub-pixels;
G��green sub-pixel;
R��redness sub-pixel.
Detailed description of the invention
Refer to Figure 1A, according to one embodiment of the invention, a kind of dot structure is described. Dot structure 10 includes first time pixel column 12 and a second time pixel column 14. First time pixel column 12 includes multiple sub-pixel 16, is electrically connected at a scan line 18. Second time pixel column 14 includes multiple sub-pixel 20. It should be noted that scan line 18 is by the region in the sub-pixel 20 of second time pixel column 14, for instance scan line 18 is by the center 24 of the sub-pixel 20 of second time pixel column 14.
In this embodiment, first time pixel column 12 is rhombus with the sub-pixel 16,20 of second time pixel column 14. But, the present invention is not limited to this, and in other embodiments, the sub-pixel 16,20 of first time pixel column 12 and second time pixel column 14 also can be rectangle or polygon. Refer to Figure 1B, according to another embodiment of the present invention, a kind of dot structure is described. Dot structure 100 includes first time pixel column 120 and a second time pixel column 140. First time pixel column 120 includes multiple sub-pixel 160, is electrically connected at a scan line 180. Second time pixel column 140 includes multiple sub-pixel 200. It should be noted that scan line 180 is by the region in the sub-pixel 200 of second time pixel column 140, for instance scan line 180 is by the center 240 of the sub-pixel 200 of second time pixel column 140.
In this embodiment, first time pixel column 120 is rectangle with the sub-pixel 160,200 of second time pixel column 140.
Then, referring to Fig. 3 A to Fig. 3 B, the sub-pixel 16 of first time pixel column 12 can include the combination of redness, blueness and green sub-pixel, for instance red sub-pixel R, blue sub-pixels B and green sub-pixel G are with transversely arranged (as shown in Figure 3A). similarly, the sub-pixel 20 of second time pixel column 14 also can include the combination of redness, blueness and green sub-pixel, for instance red sub-pixel R, blue sub-pixels B and green sub-pixel G are with transversely arranged (as shown in Figure 3A). in addition, refer to Fig. 3 B, the first time sub-pixel 16 of pixel column 12 also can include redness, blue or green sub-pixel one of them, such as red sub-pixel R, the sub-pixel 20 of second time pixel column 14 also can include redness, blue or green sub-pixel one of them, such as green sub-pixel G, the sub-pixel 21 of third time pixel column 15 can include redness, blue or green sub-pixel one of them, such as blue sub-pixels B, the sub-pixel 23 of the 4th sub-pixel row 17 can include redness, blue or green sub-pixel one of them, such as red sub-pixel R, the sub-pixel 25 of the 5th sub-pixel row 19 can include redness, blue or green sub-pixel one of them, such as green sub-pixel G, make such as red sub-pixel 16 (R), blue sub-pixels 21 (B) arranges in the way of such as longitudinal direction with green sub-pixel 25 (G).
It should be noted that scan line 18 can be corresponding to a liquid crystal An Wen district by the region in the sub-pixel 20 of second time pixel column 14. The liquid crystal An Wen district of indication is caused by position correctly cannot arrange in response to electric field at the liquid crystal that different regions, liquid crystal arrangement direction have a common boundary herein. Additionally, be can be seen that by Figure 1A, the sub-pixel 20 of second time pixel column 14 is respectively arranged between the sub-pixel 16 of first time pixel column 12, the aspect so that the sub-pixel 20 of the sub-pixel 16 of first time pixel column 12 and second time pixel column 14 is dislocation arrangement.
In addition, referring still to Figure 1A, present invention pixel structure 10 more includes a plurality of first holding wire 26, by the region to a liquid crystal An Wen district corresponding in the sub-pixel 16 of first time pixel column 12, for instance the first holding wire 26 is by the center 28 of the sub-pixel 16 of first time pixel column 12. Present invention pixel structure 10 more includes a plurality of secondary signal line 26 ', by the region to a liquid crystal An Wen district corresponding in the sub-pixel 20 of second time pixel column 14, for instance secondary signal line 26 ' is by the center 24 of the sub-pixel 20 of second time pixel column 14.
It should be noted that the scan line 18 edge 22 by the sub-pixel 16 of first time pixel column 12, and vertical with the first holding wire 26.
Present invention pixel structure 10 more includes a plurality of common electrode 30, is arranged at the edge of first time pixel column 12 and the sub-pixel 16,20 of second time pixel column 14, for instance common electrode 30 indentation (zigzag) is distributed aspect, as shown in Figure 1A.
Present invention pixel structure 10 more includes multiple driving transistor 34, is electrically connected at the sub-pixel 16 of first time pixel column 12, and is arranged between the two adjacent sub-pixels (20,20) of second time pixel column 14.
In another embodiment, refer to Figure 1B, present invention pixel structure 100 more includes a plurality of first holding wire 260, by the region to a liquid crystal An Wen district corresponding in the sub-pixel 160 of first time pixel column 120, for instance the first holding wire 260 is by the center 280 of the sub-pixel 160 of first time pixel column 120. Present invention pixel structure 100 more includes a plurality of secondary signal line 260 ', by the region to a liquid crystal An Wen district corresponding in the sub-pixel 200 of second time pixel column 140, for instance secondary signal line 260 ' is by the center 240 of the sub-pixel 200 of second time pixel column 140.
It should be noted that the scan line 180 edge 220 by the sub-pixel 160 of first time pixel column 120, and vertical with the first holding wire 260.
Present invention pixel structure 100 more includes a plurality of common electrode 300, is arranged at the edge of first time pixel column 120 and the sub-pixel 160,200 of second time pixel column 140, for instance common electrode 300 concave-convex surface distribution aspect, as shown in Figure 1B.
Present invention pixel structure 100 more includes multiple driving transistor 340, is electrically connected at the sub-pixel 160 of first time pixel column 120, and is arranged between the two adjacent sub-pixels (200,200) of second time pixel column 140.
Additionally, refer to Fig. 2, present invention pixel structure 10 more includes multiple driving element 32, it is notable that each driving element 32 can control first holding wire 26 and a secondary signal line 26 ' simultaneously.
The present invention utilizes the Heterogeneous Permutation of adjacent (different lines) sub-pixel to make the scanning line (scanline) of such as first time pixel column be buried the corresponding region to the dark stricture of vagina of liquid crystal in such as second time pixel column, namely this practice is combined with the liquid crystal dark stricture of vagina of inefficient liquid crystal by lighttight metal routing (such as scanning line and holding wire), and reach to maximize the purpose of penetrance, simultaneously, because of the scanning line that cabling is such as first time pixel column that the pixel electrode (ITO) of such as second time pixel column strides across, therefore, capacitance coupling effect (" feedthrough ") will not increase, significantly reducing prior art is make penetrance maximize the side effect supervened.
Although the present invention is disclosed above with preferred embodiment; so it is not limited to the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when making to change and retouching, therefore protection scope of the present invention is when with being as the criterion that claim defines.
Claims (15)
1. a dot structure, it is characterised in that described dot structure includes:
One scan line;
One first time pixel column, including multiple sub-pixels, is electrically connected at described scan line; And
One second time pixel column, including multiple sub-pixels, wherein said scan line is by the edge in the liquid crystal An Wen district in the described sub-pixel of described second time pixel column and the described sub-pixel of described first time pixel column.
2. dot structure as claimed in claim 1, it is characterised in that the described sub-pixel of the described sub-pixel of described first time pixel column and described second time pixel column is rectangle, rhombus or polygon.
3. dot structure as claimed in claim 1, it is characterised in that the described sub-pixel of described first time pixel column includes redness, blueness or green sub-pixel one of them or its and combines.
4. dot structure as claimed in claim 1, it is characterised in that the described sub-pixel of described second time pixel column includes redness, blueness or green sub-pixel one of them or its and combines.
5. dot structure as claimed in claim 1, it is characterized in that, the described sub-pixel of described second time pixel column is respectively arranged between the described sub-pixel of described first time pixel column, the aspect so that the described sub-pixel of the described sub-pixel of described first time pixel column and described second time pixel column is dislocation arrangement.
6. dot structure as claimed in claim 1, it is characterised in that described dot structure more includes a plurality of first holding wire, by the region in the described sub-pixel of described first time pixel column.
7. dot structure as claimed in claim 6, it is characterised in that described first holding wire is corresponding to a liquid crystal An Wen district by the described region in the described sub-pixel of described first time pixel column.
8. dot structure as claimed in claim 6, it is characterised in that described dot structure more includes a plurality of secondary signal line, by the region in the described sub-pixel of described second time pixel column.
9. dot structure as claimed in claim 8, it is characterised in that described secondary signal line is corresponding to a liquid crystal An Wen district by the described region in the described sub-pixel of described second time pixel column.
10. dot structure as claimed in claim 1, it is characterised in that described dot structure more includes a plurality of common electrode, is arranged at the edge of the described sub-pixel of described first time pixel column and the described sub-pixel of described second time pixel column.
11. dot structure as claimed in claim 10, it is characterised in that described common electrode indentation or concavo-convex.
12. dot structure as claimed in claim 6, it is characterised in that described scan line is vertical with described first holding wire.
13. dot structure as claimed in claim 1, it is characterised in that described scan line is by the center of the described sub-pixel of described second time pixel column.
14. dot structure as claimed in claim 8, it is characterised in that described dot structure more includes multiple driving element, each of which drives element to control first holding wire and a secondary signal line simultaneously.
15. dot structure as claimed in claim 1, it is characterized in that, described dot structure more includes multiple driving transistor, wherein said driving electric transistor is connected to the described sub-pixel of described first time pixel column, and is arranged between two adjacent described sub-pixels of described second time pixel column.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210019086.3A CN103217842B (en) | 2012-01-20 | 2012-01-20 | Dot structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210019086.3A CN103217842B (en) | 2012-01-20 | 2012-01-20 | Dot structure |
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| CN103217842A CN103217842A (en) | 2013-07-24 |
| CN103217842B true CN103217842B (en) | 2016-06-08 |
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| CN201210019086.3A Active CN103217842B (en) | 2012-01-20 | 2012-01-20 | Dot structure |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803180B (en) * | 2018-08-09 | 2021-09-28 | 上海天马微电子有限公司 | Liquid crystal panel and display device |
| CN113141475B (en) * | 2020-01-17 | 2024-02-02 | 思特威(上海)电子科技股份有限公司 | Imaging system and pixel merging method |
| CN111258143A (en) * | 2020-03-18 | 2020-06-09 | Tcl华星光电技术有限公司 | Display panel and display device |
| CN114815408B (en) * | 2022-04-14 | 2023-09-26 | Tcl华星光电技术有限公司 | Display panel and display device |
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| US5563727A (en) * | 1994-06-30 | 1996-10-08 | Honeywell Inc. | High aperture AMLCD with nonparallel alignment of addressing lines to the pixel edges or with distributed analog processing at the pixel level |
| US5757444A (en) * | 1992-04-28 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| CN1908791A (en) * | 2006-08-09 | 2007-02-07 | 友达光电股份有限公司 | Liquid crystal displaying device structure |
| CN101666949A (en) * | 2008-09-03 | 2010-03-10 | 北京京东方光电科技有限公司 | IPS type TFT-LCD array substrate and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100684580B1 (en) * | 2000-07-12 | 2007-02-20 | 엘지.필립스 엘시디 주식회사 | A method for fabricating array substrate for liquid crystal display device and the same |
| KR20060070177A (en) * | 2004-12-20 | 2006-06-23 | 삼성전자주식회사 | Liquid crystal display and driving method of the same |
| JP2008233594A (en) * | 2007-03-22 | 2008-10-02 | Seiko Epson Corp | Electro-optical device |
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2012
- 2012-01-20 CN CN201210019086.3A patent/CN103217842B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5757444A (en) * | 1992-04-28 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| US5563727A (en) * | 1994-06-30 | 1996-10-08 | Honeywell Inc. | High aperture AMLCD with nonparallel alignment of addressing lines to the pixel edges or with distributed analog processing at the pixel level |
| CN1908791A (en) * | 2006-08-09 | 2007-02-07 | 友达光电股份有限公司 | Liquid crystal displaying device structure |
| CN101666949A (en) * | 2008-09-03 | 2010-03-10 | 北京京东方光电科技有限公司 | IPS type TFT-LCD array substrate and manufacturing method thereof |
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| CN103217842A (en) | 2013-07-24 |
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Address after: 518109 Longhua, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 4, building 1, building Applicant after: Qunkang Technology (Shenzhen) Co., Ltd. Applicant after: Innolux Display Group Address before: 518109 Longhua, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 4, building 1, building Applicant before: Qunkang Technology (Shenzhen) Co., Ltd. Applicant before: Chimei Optoelectronics Co., Ltd. |
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