CN103217151B - A kind of four mass linearly coupled silicon micro-gyroscope sensors - Google Patents
A kind of four mass linearly coupled silicon micro-gyroscope sensors Download PDFInfo
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- CN103217151B CN103217151B CN201210017308.8A CN201210017308A CN103217151B CN 103217151 B CN103217151 B CN 103217151B CN 201210017308 A CN201210017308 A CN 201210017308A CN 103217151 B CN103217151 B CN 103217151B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 50
- 239000010703 silicon Substances 0.000 title claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 238000007789 sealing Methods 0.000 claims abstract description 105
- 230000000875 corresponding Effects 0.000 claims description 34
- 230000001808 coupling Effects 0.000 abstract description 15
- 238000010168 coupling process Methods 0.000 abstract description 15
- 238000005859 coupling reaction Methods 0.000 abstract description 15
- 238000010586 diagram Methods 0.000 description 8
- 230000016507 interphase Effects 0.000 description 8
- 230000003534 oscillatory Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 206010044565 Tremor Diseases 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052904 quartz Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
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Abstract
The invention belongs to gyro sensor, be specifically related to a kind of four mass linearly coupled silicon micro-gyroscope sensors.A kind of four mass linearly coupled silicon micro-gyroscope sensors, including sensitive structure be respectively provided with the upper sealing cap of the upper and lower both sides of sensitive structure, lower sealing cap, described sensitive structure includes 4 masses.The remarkable result of the present invention is: avoid coupling error；Counteract at coupling torque suffered by silicon micro-gyroscope sensor duty bottom base；Save processing cost.
Description
Technical field
The invention belongs to gyro sensor, be specifically related to a kind of four mass micro-tops of linearly coupled silicon
Spiral shell sensor.
Background technology
Gyro is a kind of sensor moved relative to inertial space angle of rotation for Measuring Object
Device.Gyro the earliest is to be paid section (L.Foucault) by French scientist to utilize high-speed rotation
The gyroscopic inertia of rigid body develops, and applies at navigational field for replacing compass to provide orientation
Benchmark.Gyro is developed so far the history of more than 100 year, and present gyro has been a kind of weight
The senser element wanted, is the core devices of gesture stability and inertial guidance, aircraft, guided missile,
The various fields such as aerospace, ship navigation, satellite control, auto industry, drilling well detection suffer from
Very important application.
Along with the development of gyroscope technology, low cost, small size, low-power consumption micromechanical gyro
Being used widely in the guidance system of mini system and tactical weapon, it is that future is the most main
Low precision angular-rate sensor in wanting.MEMS many employings silicon materials at present, its tool
There is excellent mechanically and electrically characteristic.Existing gyro sensitive structure is general as shown in Figure 1,
Including sensitive structure 10 be separately positioned on the upper sealing cap 20 of sensitive structure about 10 and lower envelope
Cap 30.Silicon micromechanical gyroscope to reach higher performance, at current silicon micro-gyroscope sensitive structure
Need in design solve problems with:
1) coupling error is big.The existence of coupling error can have a strong impact on the precision of gyro, such as
Affect the bias instaility of gyro, quickly startup and thermal adaptability etc..
2) pedestal is affected greatly by coupling torque.The most commonly used single mass or double quality blocks
Structure, when gyro is in running order, coupling torque suffered by pedestal is the biggest, coupling suffered by pedestal
Resultant moment senior general affects the bias instaility of gyro.
3) processing cost is high.The contact conductor of silicon micromechanical gyroscope by sensitive structure respectively to up and down
Both direction is drawn, and upper and lower sealing cap supporting layer is intended to punching, and processing technique is complicated, and cost is high.
Summary of the invention
It is an object of the invention to the defect for prior art, it is provided that a kind of four mass linearly coupled
Silicon micro-gyroscope sensor.
The present invention is achieved in that a kind of four mass linearly coupled silicon micro-gyroscope sensors,
Including sensitive structure and be respectively provided with the upper sealing cap of the upper and lower both sides of sensitive structure, lower sealing cap, described
Sensitive structure include 4 masses.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, wherein, described
Sensitive structure include 4 masses, 4 groups of support beams, 8 groups drive dynamic tooth, 8 groups of drivings
Determine tooth, 8 drive determine tooth contiguous block, 8 drive determine tooth rivet block, central supported point, 4
Individual attachment structure, 4 masses are evenly distributed in the circumferential direction, and each mass is all by one
Individual support beam is connected with central supported point, and tooth is all moved with driving in the both sides of each mass,
Arranging 2 drivings between adjacent mass and determine tooth contiguous block, this driving determines tooth contiguous block for sector
Cylinder part, arranges driving on the sidewall towards adjacent mass side and determines tooth, this driving
Determine tooth to realize by determining to arrange projection on the sidewall of tooth contiguous block in driving, drive the one end determining tooth
Arranging driving and determine tooth riveting block, two adjacent drivings are determined tooth riveting block outer end and are arranged a connection
Structure, all attachment structures are uniformly arranged on outside sensitive structure, each attachment structure angle model
Enclosing the angular range all crossing over adjacent two mass place, tooth and driving are moved in described driving
Determining tooth interlaced arrangement, form variable area formula driving comb, tooth is moved in mass, support beam, driving
Uniform thickness；Drive determine tooth, drive determine tooth contiguous block, driving determine tooth rivet block, central supported point,
Attachment structure uniform thickness.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, wherein, described
4 masses evenly distributed in the circumferential direction time, two relative masses are one group, work
Make to keep under state moving in the same direction；Another is one group to mass, the direction of motion under duty
Contrary with the previous group direction of motion.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, wherein, drive
Determine the upper surface of tooth higher than driving dynamic tooth 2～3 μm；Drive the lower surface determining tooth less than driving dynamic tooth
2～3 μm.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, wherein, described
Upper sealing cap be made up of upper sealing cap device layer, upper sealing cap insulating barrier, upper sealing cap supporting layer, upper envelope
Device layer in cap includes that tooth riveting is determined in 4 plane electrode blocks, 4 attachment structures, 8 drivings
Connecing block and 1 central supported point, plane electrode block is sector, improves quality with sensitive structure in position
Block one_to_one corresponding；Attachment structure is knife-edge, and each attachment structure is connected with plane electrode block, its
Middle handle of a knife connects knife face and plane electrode block, knife face position and the attachment structure phase on sensitive structure
Corresponding；Drive determine tooth riveting block position determine with the driving on sensitive structure tooth rivet block corresponding；
Upper sealing cap central supported point position is corresponding with the central supported point on sensitive structure,
Insulating barrier in upper sealing cap is wafer architecture, above with 8 plane electrode fairleads,
4 drive fairlead, 1 central supported point fairlead, plane electrode fairlead position and device
Plane electrode block on part layer is corresponding；Fairlead position is driven to determine tooth with the driving on device layer
Riveting block is corresponding；Central supported point fairlead position and the upper sealing cap central supported on device layer
Point is corresponding,
Supporting layer in upper sealing cap is round structure, above with 8 plane electrode fairleads,
4 drive fairlead, 1 central supported point fairlead, and plane electrode fairlead position is with exhausted
Plane electrode fairlead in edge layer is corresponding；Drive fairlead position and the driving on insulating barrier
Fairlead is corresponding；Central supported point fairlead position and the central supported point lead-in wire on insulating barrier
Hole is corresponding.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, wherein, state
Lower sealing cap is made up of lower sealing cap device layer, lower sealing cap insulating barrier, lower sealing cap supporting layer, lower sealing cap
In device layer identical with the device layer in upper sealing cap, device layer in lower sealing cap with in upper sealing cap
Device layer symmetrically placed about sensitive structure, in lower sealing cap insulating barrier and supporting layer be disk knot
Structure.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, wherein, described
Mass be fan-shaped cylinder, fan-shaped angle is 50 °～80 °.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, wherein, drive
The number that tooth is determined in dynamic tooth and driving is 20～60.
The remarkable result of the present invention is: the driving comb in the present invention is the most contour comb, it is to avoid
Dynamic tooth is driven owing to mass up-down vibration drives under silicon micro-gyroscope sensor duty
The change of the driving comb overlapping area that up-down vibration produces, thus blocked and driving detected
Coupling channel, it is to avoid coupling error.
The present invention uses 4 mass block structures, counteracts in silicon micro-gyroscope sensor duty
Coupling torque suffered by bottom base.This silicon micro-gyroscope sensor driven-mode is interphase mass block edge
Z axis homophase whirling vibration, adjacent mass is along the anti-phase whirling vibration of Z axis；Its sensed-mode is
Interphase mass block, therefore supports along Z axis in phase vibration, adjacent mass along the anti-phase vibration of Z axis
Disappear at coupling torque suffered by silicon micro-gyroscope sensor duty bottom base.
The monolateral extraction of electrode, reduces processing cost.Plane electrode block on upper and lower sealing cap leads to
Cross attachment structure and rotate connected, it is achieved that the signal on lower sealing cap spreads out of from above, thus lower envelope
Insulating barrier and supporting layer on cap are no longer necessary to punching, have saved processing cost.
Accompanying drawing explanation
Fig. 1 is silicon micro-gyroscope sensor assembly relation schematic diagram；
Fig. 2 is four mass oscillatory type silicon microthrust test sensor generalized sections；
Fig. 3 is four mass oscillatory type silicon microthrust test sensor sensitive structure schematic diagrams；
Fig. 4 is sealing cap device layer schematic diagram on four mass oscillatory type silicon microthrust test sensors；
Fig. 5 is sealing cap insulating barrier schematic diagram on four mass oscillatory type silicon microthrust test sensors；
Fig. 6 is sealing cap supporting layer schematic diagram on four mass oscillatory type silicon microthrust test sensors；
Fig. 7 is sealing cap device layer schematic diagram under four mass oscillatory type silicon microthrust test sensors；
Fig. 8 is sealing cap insulating barrier schematic diagram under four mass oscillatory type silicon microthrust test sensors；
Fig. 9 is sealing cap supporting layer schematic diagram under four mass oscillatory type silicon microthrust test sensors.
In figure: 10. sensitive structure, 11. masses, 12. support beams, the 13. dynamic teeth of driving, 14.
Driving and determine tooth, 15. drive and determine tooth and rivet block, and tooth contiguous block is determined in 16. drivings, 17. attachment structures,
18. central supported points, sealing cap on 20., 20a. upper sealing cap device layer, 20b. upper sealing cap insulating barrier,
20c. upper sealing cap supporting layer, 21. plane electrode blocks, tooth riveting block, 23. connection knots are determined in 22. drivings
Structure, sealing cap central supported point on 24., 25. plane electrode fairleads, 26. comb electrodes fairleads,
27. central supported point fairleads, 30. times sealing caps, sealing cap device layer under 30a., under 30b., sealing cap is exhausted
Edge layer, sealing cap supporting layer under 30c., 31. plane electrode blocks, 32. drive determine tooth rivet block, 33.
Attachment structure, 34. central supported points.
Detailed description of the invention
Below in conjunction with the accompanying drawings with the embodiment one four mass micro-top of linearly coupled silicon to the present invention
Spiral shell sensor is introduced:
As it is shown on figure 3, set up following coordinate system: with horizontal direction to the right for X-axis forward,
Vertical direction is upwards Y-axis forward, Z axis be perpendicular to plane that X-axis and Y-axis formed and
Meet the right-hand rule.
As depicted in figs. 1 and 2, a kind of four mass linearly coupled silicon micro-gyroscope sensors, bag
Include generally circular sensitive structure 10 and be respectively provided with the upper envelope of sensitive structure about 10 both sides
Cap 20, lower sealing cap 30.
As shown in Figure 3, sensitive structure 10 include 11,4 groups of support beams 12 of 4 masses,
8 groups drive dynamic 13,8 groups of tooth to drive determine the driving of 14,8, tooth and determine tooth contiguous block 16,8 and drive
Move and determine tooth riveting block 15,18,4 attachment structures 17 of central supported point.Described mass
11 is fan-shaped cylinder, and fan-shaped angle is 50 °～80 °.4 mass 11 circumferentially sides
To being evenly arranged, each mass 11 is all by a support beam 12 and central supported point 18
Connect.Described support beam 12 is identical with mass 11 with the material of central supported point 18.
The both sides of each mass 11 are all with driving dynamic tooth 13.Drive dynamic tooth 13 by quality
Block 11 sidewall arranges protruding realization.2 drivings are set between adjacent mass 11 and determine tooth even
Connecing block 16, it is fan-shaped cylinder part that tooth contiguous block 16 is determined in this driving, towards adjacent quality
Driving is set on the sidewall of block 11 side and determines tooth 14.This driving determines tooth 14 by fixed in driving
Protruding realization is set on the sidewall of tooth contiguous block 16.The one end determining tooth contiguous block 16 is driven to arrange
Drive and determine tooth riveting block 15.Two adjacent drivings are determined the outer end of tooth riveting block 15 and are arranged one
Attachment structure 17, all attachment structures 17 are uniformly arranged on outside sensitive structure 10, each
Attachment structure 17 angular range all crosses over the angular range at adjacent two mass 11 place.
Described attachment structure 17 is the structure being connected with upper sealing cap 20 and lower sealing cap 30, typically adopts
Use circular arc type structure.Described driving is moved tooth 13 and is determined tooth 14 interlaced arrangement with driving, and is formed and becomes
Area formula driving comb, its number sets according to actual needs, generally 20～60, as
20,35 or 60 (i.e. 20 drive dynamic 13,20, tooth driving to determine tooth 14；Or 35
Dynamic 13,35, tooth driving is driven to determine tooth 14；Or 60 dynamic 13,60, teeth of driving drive and determine
Tooth 14).Mass 11, support beam 12, dynamic tooth 13 uniform thickness of driving；Driving is determined tooth 14, is driven
Dynamic determine tooth contiguous block 16, drive and determine tooth and rivet block 15, central supported point 18, attachment structure 17
Uniform thickness.Tooth 14 is determined in driving, tooth contiguous block 16 is determined in driving, tooth riveting block 15, center are determined in driving
The strong point 18, the upper surface of attachment structure 17 are higher than mass 11, support beam 12, drive
The height of dynamic tooth 13 is 2～3 μm；Tooth 14 is determined in driving, tooth contiguous block 16 is determined in driving, it is fixed to drive
Tooth riveting block 15, central supported point 18, attachment structure 17 lower surface less than mass 11,
Support beam 12, the height of the dynamic tooth 13 of driving are 2～3 μm.
As shown in accompanying drawing 2 and accompanying drawing 4～accompanying drawing 6, described upper sealing cap 20 is by upper sealing cap device
Layer 20a, upper sealing cap insulating barrier 20b, upper sealing cap supporting layer 20c composition.In upper sealing cap 20
Device layer 20a includes that tooth is determined in 23,8 drivings of 21,4 attachment structures of 4 plane electrode blocks
Riveting block 22 and 1 central supported point 24.Plane electrode block 21 is in sector, and position is with quick
Sense structure 10 is improved quality block 11 one_to_one corresponding；Attachment structure 23 is in knife-edge, and each connection is tied
Structure 23 is connected with plane electrode block 21, and wherein handle of a knife connects knife face and plane electrode block 21,
Knife face position is corresponding with the attachment structure 17 on sensitive structure 10；Drive and determine tooth riveting block
It is corresponding that tooth riveting block 15 is determined in 22 positions with the driving on sensitive structure 10；Upper sealing cap center
The strong point 24 position is corresponding with the central supported point 18 on sensitive structure 10.
Insulating barrier 20b in upper sealing cap 20 is wafer architecture, above with 8 plane electrodes
Fairlead 25,4 drives 26,1 central supported point fairlead 27 of fairlead.Plane electricity
Pole fairlead 25 position is corresponding with the plane electrode block 21 on device layer 20a；Drive lead-in wire
It is corresponding that tooth riveting block 22 is determined in position, hole 26 with the driving on device layer 20a；Central supported point
Fairlead 27 position is corresponding with the upper sealing cap central supported point 24 on device layer 20a.
Supporting layer 20c in upper sealing cap 20 is round structure, above with 8 plane electrodes
Fairlead 25,4 drives 26,1 central supported point fairlead 27 of fairlead.Plane electricity
Pole fairlead 25 position is corresponding with the plane electrode fairlead 25 on insulating barrier 20b；Drive
Fairlead 26 position is corresponding with the driving fairlead 26 on insulating barrier 20b；Central supported point
Fairlead 27 position is corresponding with the central supported point fairlead 27 on insulating barrier 20b.
As shown in accompanying drawing 2 and Fig. 7～Fig. 9, described lower sealing cap 30 by lower sealing cap device layer 30a,
Lower sealing cap insulating barrier 30b, lower sealing cap supporting layer 30c form.Device layer in lower sealing cap 30
30a is identical with the device layer 20a in upper sealing cap 20, the device layer 30a in lower sealing cap 30 with
Device layer 20a in upper sealing cap 20 is symmetrically placed about sensitive structure 10.
In lower sealing cap 30, insulating barrier 30b and supporting layer 30c is wafer architecture.
Sensitive structure 10 is made for Si material, and its thickness is 60～80 μm.Upper sealing cap 20 and
Lower sealing cap 30 is made for SOI material, and wherein device layer 20a, 30a is Si, and thickness is
60～80 μm, insulating barrier 20b, 30b are SiO2, thickness is 1～2 μm, supporting layer 20c,
30c is Si, and thickness is 400～500 μm.
Upper sealing cap 20, sensitive structure 10, lower sealing cap 30 three-decker stack, Qi Zhongshang
Device layer 20a, 30a in sealing cap 20, lower sealing cap 30 are adjacent with sensitive structure 10.Three layers
It is closely coupled that structure uses Si-Si bond to close, upper sealing cap device layer 20a, lower sealing cap device after bonding
Part layer 30a and thicker position on sensitive structure 10 drive determines tooth riveting block 15, central supported point
18, attachment structure 17 is closely coupled, relatively thin position mass 11 on sensitive structure 10,
Support beam 12, the dynamic tooth 13 of driving are unsettled.Upper sealing cap insulating barrier 20b, lower sealing cap insulating barrier 30b
By upper sealing cap device layer 20a, lower sealing cap device layer 30a and upper sealing cap supporting layer 20c, lower envelope
Cap supporting layer 30c carries out electric isolation.
The work process of a kind of four mass linearly coupled silicon micro-gyroscope sensors of the present invention is such as
Under:
The first step: set up driving vibration or with reference to vibration；
(1) determining to apply the signal of telecommunication on tooth riveting block 22 in driving, this signal of telecommunication is fixed by driving
Tooth riveting block 15, drive and determine tooth contiguous block 16 and pass to drive and determine on tooth 14, control voltage pole
Property, make the driving of mass 11 both sides determine the polarity of voltage on tooth 14 contrary, mass 11
Deflected to side by electrostatic force, determine to apply alternating voltage on tooth riveting block 22 driving,
Mass 11 is along Z axis whirling vibration.
(2) control the polarity of driving voltage, make interphase mass block 11 rotate along Z axis homophase and shake
Dynamic, adjacent mass 11 is along the anti-phase whirling vibration of Z axis.
Second step: resolve input angular velocity；
(1) along Y-axis to the one four mass linearly coupled silicon micro-gyroscope sensor of the present invention
Input angular velocity, mass 11 is by the effect of Coriolis (Coriolis) power.
(2) mass 11 produces the motion of Z-direction under the effect of Coriolis force, i.e. examines
Dynamic or the sensitive vibration of vibration measuring.Because interphase mass block 11 is along Z axis homophase whirling vibration, adjacent matter
Gauge block 11 is along the anti-phase whirling vibration of Z axis, and its Coriolis force produced is interphase mass block 11
Impact direction homophase, adjacent mass 11 Impact direction is anti-phase, therefore, interphase mass block 11
Producing in phase vibration, adjacent mass 11 produces anti-phase vibration, vibration displacement and Coriolis
Power is directly proportional.
Move with mass 11 owing to the size of Coriolis force is proportional to the quality of mass 11
Instantaneous velocity and the product of above-mentioned input angular velocity, the direction of Coriolis force is along Z
Direction, and meet with the instantaneous velocity direction of mass 11 motion and the direction of input angular velocity
The right-hand rule, it may be assumed that
In formula,
For Coriolis force, for measurement to be checked；M is the quality of mass 11,
For known quantity；
For mass 11 motion instantaneous velocity, for known quantity；
For stating input angle speed
Degree, for unknown quantity.
(3) use existing capacitance measurement technique detection detection capacitance change, specifically,
Owing to mass 11 is along Z-direction vertical tremor, the lower sealing cap device corresponding with mass 11
Plane electrode block 31 on layer 30a and the plane electrode block 21 on upper sealing cap device layer 20a produce
The raw opposite polarity signal of telecommunication, by attachment structure 17 by lower sealing cap corresponding for mass 11
The upper envelope that plane electrode block 31 on device layer 30a is corresponding with adjacent mass 11 counterclockwise
Plane electrode block on cap device layer 20a 21 is connected, by sealing cap insulating barrier 20b on upper sealing cap,
Signal is drawn by the plane electrode fairlead 25 on upper sealing cap supporting layer 20c.
(4) use prior art to demodulate amplitude and the phase place of capacitance variations, obtain mass
The vibration displacement in 11Z direction, and then obtain Coriolis force.
(5) size and Orientation of input angular velocity is obtained according to formula (1) resolving.
Driving in the silicon micro-gyroscope sensor of the present invention determine tooth 14 on sensitive structure 10,
Lower two sides is all thicker than the dynamic tooth 13 of driving, defines the most contour comb, when mass 11 is in section
When there is Z-direction vibration under profit difficult to understand power effect, it is overlapping with drive dynamic tooth 13 that tooth 14 is determined in driving
Area will not change, thus has blocked coupling channel driving being detected.
The silicon micro-gyroscope sensor of the present invention uses 4 mass block structures, and this silicon micro-gyroscope is sensitive
Device driven-mode is that interphase mass block 11 is along Z axis homophase whirling vibration, adjacent mass 11
Along the anti-phase whirling vibration of Z axis, counteract in silicon micro-gyroscope sensor driving condition bottom base institute
By coupling torque.This silicon micro-gyroscope sensor sensed-mode is that interphase mass block 11 is along Z axis
In phase vibration, adjacent mass, along the anti-phase vibration of Z axis, counteracts at silicon micro-gyroscope sensor
Coupling torque suffered by detection state bottom base.Therefore counteract and work at silicon micro-gyroscope sensor
Coupling torque suffered by state bottom base.
The silicon micro-gyroscope sensor of the present invention passes through attachment structure 17 by corresponding for mass 11
Lower sealing cap device layer 30a on plane electrode block 31 relative with adjacent mass 11 counterclockwise
Plane electrode block 21 on the upper sealing cap device layer 20a answered is connected, and meets the identical signal of polarity
While adding up mutually, it is achieved that the letter on plane electrode block 31 on lower sealing cap device layer 30a
Number drawn by the plane electrode block 21 on upper sealing cap device layer 20a.The monolateral extraction of electrode, from
And insulating barrier and the supporting layer on lower sealing cap is no longer necessary to punching, save processing cost.
Claims (7)
1. a four mass linearly coupled silicon micro-gyroscope sensor, including sensitive structure (10) be separately positioned on sensitive structure (10) the up and down upper sealing cap (20) of both sides, lower sealing cap (30), it is characterised in that:
nullDescribed sensitive structure (10) includes 4 masses (11)、4 groups of support beams (12)、8 groups drive dynamic tooth (13)、Tooth (14) is determined in 8 groups of drivings、Tooth contiguous block (16) is determined in 8 drivings、Tooth riveting block (15) is determined in 8 drivings、Central supported point (18)、4 attachment structures (17)，4 masses (11) are evenly distributed in the circumferential direction，Each mass (11) is all connected with central supported point (18) by a support beam (12)，The both sides of each mass (11) are all with driving dynamic tooth (13)，2 drivings are set between adjacent mass (11) and determine tooth contiguous block (16)，It is fan-shaped cylinder part that tooth contiguous block (16) is determined in this driving，Sidewall towards adjacent mass (11) side arranges driving and determines tooth (14)，This driving determines tooth (14) by determining to arrange protruding realization on the sidewall of tooth contiguous block (16) in driving，Drive the one end determining tooth contiguous block (16) that driving is set and determine tooth riveting block (15)，Two adjacent drivings are determined the outer end of tooth riveting block (15) and are arranged an attachment structure (17)，All attachment structures (17) are uniformly arranged on sensitive structure (10) outside，Each attachment structure (17) angular range all crosses over the angular range at adjacent two mass (11) place，Described driving is moved tooth (13) and is determined tooth (14) interlaced arrangement with driving，Form variable area formula driving comb，Mass (11)、Support beam (12)、Drive dynamic tooth (13) uniform thickness；Tooth (14) is determined in driving, tooth contiguous block (16) is determined in driving, tooth riveting block (15), central supported point (18), attachment structure (17) uniform thickness are determined in driving.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, it is characterized in that: when 4 described masses (11) are evenly distributed in the circumferential direction, two relative masses (11) are to keep under one group, duty moving in the same direction；Another is one group to mass (11), and under duty, the direction of motion is contrary with the previous group direction of motion.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, it is characterised in that: drive the upper surface determining tooth (14) higher than driving dynamic tooth (13) 2 μm；Drive the lower surface determining tooth (14) less than driving dynamic tooth (13) 3 μm.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, it is characterized in that: described upper sealing cap (20) is by upper sealing cap device layer (20a), upper sealing cap insulating barrier (20b), upper sealing cap supporting layer (20c) forms, device layer (20a) in upper sealing cap (20) includes 4 plane electrode blocks (21), 4 attachment structures (23), tooth riveting block (22) and 1 central supported point (24) are determined in 8 drivings, plane electrode block (21) is in sector, position and sensitive structure (10) are improved quality block (11) one_to_one corresponding；Attachment structure (23) is in knife-edge, each attachment structure (23) is connected with plane electrode block (21), wherein handle of a knife connects knife face and plane electrode block (21), and knife face position is corresponding with the attachment structure (17) on sensitive structure (10)；Drive determine tooth riveting block (22) position determine with the driving on sensitive structure (10) tooth rivet block (15) corresponding；Upper sealing cap central supported point (24) position is corresponding with central supported point (18) on sensitive structure (10),
Insulating barrier (20b) in upper sealing cap (20) is wafer architecture, above with 8 plane electrode fairleads (25), 4 drivings fairlead (26), 1 central supported point fairlead (27), plane electrode fairlead (25) position is corresponding with the plane electrode block (21) on device layer (20a)；Fairlead (26) position is driven to determine tooth riveting block (22) with the driving on device layer (20a) corresponding；Central supported point fairlead (27) position is corresponding with upper sealing cap central supported point (24) on device layer (20a),
Supporting layer (20c) in upper sealing cap (20) is round structure, above with 8 plane electrode fairleads (25), 4 drivings fairlead (26), 1 central supported point fairlead (27), plane electrode fairlead (25) position is corresponding with the plane electrode fairlead (25) on insulating barrier (20b)；Drive fairlead (26) position corresponding with the driving fairlead (26) on insulating barrier (20b)；Central supported point fairlead (27) position is corresponding with central supported point fairlead (27) on insulating barrier (20b).
A kind of four mass linearly coupled silicon micro-gyroscope sensors, it is characterized in that: described lower sealing cap (30) is by lower sealing cap device layer (30a), lower sealing cap insulating barrier (30b), lower sealing cap supporting layer (30c) forms, device layer (30a) in lower sealing cap (30) is identical with the device layer (20a) in upper sealing cap (20), device layer (30a) in lower sealing cap (30) is symmetrically placed about sensitive structure (10) with the device layer (20a) in upper sealing cap (20), in lower sealing cap (30), insulating barrier (30b) and supporting layer (30c) are wafer architecture.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, it is characterised in that: described mass (11) is fan-shaped cylinder, and fan-shaped angle is 50 °～80 °.
A kind of four mass linearly coupled silicon micro-gyroscope sensors, it is characterised in that: driving dynamic tooth (13) and driving the number determining tooth (14) is 20～60.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210017308.8A CN103217151B (en) | 2012-01-19 | A kind of four mass linearly coupled silicon micro-gyroscope sensors |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210017308.8A CN103217151B (en) | 2012-01-19 | A kind of four mass linearly coupled silicon micro-gyroscope sensors |
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| Publication Number | Publication Date |
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| CN103217151A CN103217151A (en) | 2013-07-24 |
| CN103217151B true CN103217151B (en) | 2016-11-30 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101270988A (en) * | 2008-03-14 | 2008-09-24 | 江苏英特神斯科技有限公司 | Multi-shaft inertial sensor and method for measuring multi-shaft translation and rotation acceleration |
| CN101368825A (en) * | 2008-09-25 | 2009-02-18 | 中国人民解放军国防科学技术大学 | Angle vibration silicon micro-gyroscope and preparation thereof |
| CN102278982A (en) * | 2011-07-13 | 2011-12-14 | 中国人民解放军国防科学技术大学 | Restraining method for coupling error of micro silicon gyroscope with four mass blocks |
| CN102305626A (en) * | 2011-07-07 | 2012-01-04 | 西北工业大学 | Novel MEMS (micro electro mechanical system) centrifugal-type gyroscope |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101270988A (en) * | 2008-03-14 | 2008-09-24 | 江苏英特神斯科技有限公司 | Multi-shaft inertial sensor and method for measuring multi-shaft translation and rotation acceleration |
| CN101368825A (en) * | 2008-09-25 | 2009-02-18 | 中国人民解放军国防科学技术大学 | Angle vibration silicon micro-gyroscope and preparation thereof |
| CN102305626A (en) * | 2011-07-07 | 2012-01-04 | 西北工业大学 | Novel MEMS (micro electro mechanical system) centrifugal-type gyroscope |
| CN102278982A (en) * | 2011-07-13 | 2011-12-14 | 中国人民解放军国防科学技术大学 | Restraining method for coupling error of micro silicon gyroscope with four mass blocks |
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