CN103208974A - Differential-mode and common-mode capacitance integration module for high-power plane electro-magnetic interference (EMI) filter - Google Patents
Differential-mode and common-mode capacitance integration module for high-power plane electro-magnetic interference (EMI) filter Download PDFInfo
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- CN103208974A CN103208974A CN201310080253XA CN201310080253A CN103208974A CN 103208974 A CN103208974 A CN 103208974A CN 201310080253X A CN201310080253X A CN 201310080253XA CN 201310080253 A CN201310080253 A CN 201310080253A CN 103208974 A CN103208974 A CN 103208974A
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- 230000010354 integration Effects 0.000 title abstract description 11
- 208000032365 Electromagnetic interference Diseases 0.000 title abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052802 copper Inorganic materials 0.000 claims abstract description 46
- 239000010949 copper Substances 0.000 claims abstract description 46
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 64
- 229910052759 nickel Inorganic materials 0.000 claims description 32
- 239000000919 ceramic Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 6
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 239000003990 capacitor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000002500 effect on skin Effects 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Abstract
The invention discloses a differential-mode and common-mode capacitance integration module for a high-power plane electro-magnetic interference (EMI) filter. The differential-mode and common-mode capacitance integration module comprises common-mode attenuators, differential-mode attenuators, a first U-shaped copper strip and a second U-shaped copper strip. Two long arms of the first U-shaped copper strip are correspondingly connected with two long arms of the second U-shaped copper strip through two differential-mode attenuators, and the common-mode attenuators are installed on the outer sides of the two long arms of the first U-shaped copper strip and the outer sides of the two long arms of the second U-shaped copper strip respectively. Accordingly, the attenuators are covered only on the two long arms of every U-shaped copper strip, nothing is covered at U-shaped radian positions of the copper strips, electromagnetic coupling between attenuator modules becomes simple, and simultaneously, due to the fact that a U-shaped structure is used, the problem that unevenness in current distribution of corners in a three-section type structure can be effectively solved.
Description
Technical Field
The invention relates to a difference-common mode capacitor integrated module for a high-power plane EMI filter.
Background
The EMI filter is an important means for inhibiting and conducting electromagnetic interference in the switching power supply, in a distributed power supply system, the EMI filter generally accounts for 15% -20% of the whole front-end converter, and along with the miniaturization trend of a power electronic system, the size of the front-end converter is continuously reduced, and the size of the EMI filter also needs to be continuously reduced. The integration of the EMI filter accords with the development trend of miniaturization and integration of a power electronic system. By consulting relevant documents, the integration of the EMI filter mainly comprises the integration of differential and common mode inductors; integrating a common-mode inductor and a common-mode capacitor; and integrating the differential mode inductor and the common mode capacitor. However, these integrated filters also suffer from large power energy while filtering in the circuit, making it difficult to develop the integrated filters to high power. In order to solve the problems, the CPES provides a linear radio frequency filter, which is composed of a common mode attenuation module, a copper bar and a differential mode attenuation module, wherein power current flows in the copper bar, and noise current flows in the common mode attenuation module and the differential mode attenuation module, so that the separation of the power current and the noise current is realized, the sectional area of the copper bar can be relatively large, the power energy which can be borne by the whole filter is relatively large, the whole filter presents low resistance to the power current of 50Hz and extremely high impedance to the high-frequency noise current, but the whole module needs to be very long to realize the target common mode capacitance value and differential mode capacitance value by using the structure, and the miniaturization and integration of the filter are not facilitated. In view of the above, the CPES further provides a three-section filter, which is equivalent to bending the previous linear filter into three sections, and the sections are connected with each other at a right angle, but the structure can effectively solve the length problem of the linear filter, but the structure adopts the right-angle connection between the sections, so that the current is not uniformly distributed at the right-angle corner, which seriously affects the performance of the filter, and simultaneously, the electromagnetic coupling between the three sections becomes complicated due to the close distance between the three sections with the same structure.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a difference-common mode capacitor integrated module for a high-power plane EMI filter, which adopts two U-shaped copper strips as substrates, wherein the U-shaped copper strips are used as the substratesThe common mode attenuator is covered above the two long arms, and a U-shaped copper strip is arranged
And U-shaped copper bar
Between the long arms is covered with a differential mode attenuator, and a U-shaped copper strip
The common mode attenuator is covered under the two long arms. In the structure, only two long arms of the U-shaped copper strip are covered with the attenuators, the copper strip at the U-shaped radian is not covered with anything, so that the electromagnetic coupling between attenuator modules is simple, and meanwhile, the problem of uneven current distribution at the corners in the three-section structure can be effectively solved due to the U-shaped structure.
In order to achieve the purpose, the invention adopts the following technical scheme:
a difference-mode and common-mode capacitor integrated module for a high-power planar EMI filter comprises a common-mode attenuator, a difference-mode attenuator, a U-shaped copper strip I and a U-shaped copper strip II; the two long arms of the U-shaped copper bar I are correspondingly connected with the two long arms of the U-shaped copper bar II through a differential mode attenuator respectively, and the outer sides of the two long arms of the U-shaped copper bar I, U are provided with a common mode attenuator respectively.
The common mode attenuator comprises a ceramic plate I and nickel layers laminated on two sides of the ceramic plate I.
The ceramic plate I is made of N1250 material.
The common mode attenuator comprises a ceramic plate II and nickel layers covering two sides of the ceramic plate II.
The ceramic plate II adopts BaTiO3And (5) manufacturing materials.
According to the technical scheme, the invention has the following beneficial effects corresponding to the prior art:
when the differential-mode and common-mode capacitor integrated module is used, 50Hz power current flows from the copper bar, high-frequency common-mode noise current flows from the common-mode attenuator, and high-frequency differential-mode noise current flows from the differential-mode attenuator, so that the differential-mode and common-mode capacitor integrated module realizes that the 50Hz power current and the high-frequency noise current flow through different paths, presents low impedance to the 50Hz power current and extremely high impedance to the high-frequency noise current, and further realizes a filtering function; in addition, the attenuator is only covered on the two long arms of the U-shaped copper strip, and the copper strip at the U-shaped radian is not covered with anything, so that the electromagnetic coupling between attenuator modules is simple, and meanwhile, the problem of uneven current distribution at the corner in a three-section structure can be effectively solved due to the U-shaped structure.
Drawings
FIG. 1 is an exploded view of an integrated differential and common mode capacitor module according to the present invention;
FIG. 2 is a cross-sectional view of the common mode attenuator of FIG. 1;
FIG. 3 is a cross-sectional view of the differential mode attenuator of FIG. 1;
FIG. 4 is a connection diagram of the differential-common mode capacitance integration module according to the present invention;
FIG. 5 is a current distribution diagram of the differential-common mode capacitance integration module according to the present invention; wherein: FIG. 5a shows a schematic diagram of a 50Hz current flowing through a low impedance copper bar; FIG. 5b shows a schematic diagram of the high frequency common mode current passing through the common mode attenuators on both sides of the copper bar; FIG. 5c is a schematic diagram showing the differential mode current flowing through the differential mode attenuator between the copper bars;
in FIGS. 1-3: 201. a first common mode attenuator I; 202. a second common mode attenuator I; 203. a U-shaped copper bar I; 204. a first differential mode attenuator; 205. a second differential mode attenuator; 206. a U-shaped copper bar II; 207. a first common mode attenuator II; 208. a second common mode attenuator II; 209. a nickel layer I of the common mode attenuator; 210. a ceramic plate I of the common mode attenuator; 211. a nickel layer II of the common mode attenuator; 212. a nickel layer I of the differential mode attenuator; 213. a ceramic plate II of the differential mode attenuator; 214. a nickel layer II of the differential mode attenuator;
in fig. 4 and 5: vinIs an input terminal; voutIs an output terminal.
Detailed Description
The attached drawings disclose a schematic structural diagram of a preferred embodiment of the invention without limitation; the technical solution of the present invention will be described in detail below with reference to the accompanying drawings.
The differential-common mode capacitor integrated module for the high-power planar EMI filter, as shown in FIG. 1, includes a first common mode attenuator I201, a second common mode attenuator I202, a U-shaped copper bar I203, a first differential mode attenuator 204, a second differential mode attenuator 205, a U-shaped copper bar II206, a first common mode attenuator II207, and a second common mode attenuator II 208.
The first common mode attenuator I201, the second common mode attenuator I202, the first common mode attenuator II207 and the second common mode attenuator II208 have the same structure, and as shown in FIG. 2, each of the common mode attenuators comprises a ceramic board I210 and nickel layers 209 and 211 laminated on two sides of the ceramic board I210; the ceramic plate I is made of N1250 material.
The first differential mode attenuator 204 and the second differential mode attenuator 205 have the same structure, and as shown in fig. 3, each of them includes a ceramic plate II213 and nickel layers 212 and 214 covering two side surfaces of the ceramic plate II 213; the ceramic plate II adopts BaTiO3Is made of the materials.
The connection diagram of each component in the differential-common mode capacitance integrated module is shown in fig. 4: the nickel layer II211 of the second common mode attenuator I202 is connected with a long arm of the U-shaped copper strip I203 and the nickel layer I212 of the second differential mode attenuator 205 as an input terminal of the circuit. The nickel layer II214 of the second differential mode attenuator 205 is connected together with the cu-bar II206 and the second common mode attenuator II208 as the other input terminal of the circuit. The nickel layer II211 of the first common mode attenuator I201 is connected with a long arm of the U-shaped copper strip I203 and the nickel layer I212 of the first differential mode attenuator 204 to serve as an output terminal of the circuit. The nickel layer II214 of the first differential mode attenuator 204 is connected with the U copper bar II206 and the nickel layer I212 of the first common mode attenuator II207 together to be used as the other output terminal of the circuit. The nickel layers I209 of the first common mode attenuator I201 and the second common mode attenuator I202 and the nickel layers II211 of the first common mode attenuator II207 and the second common mode attenuator II208 are grounded respectively.
As shown in FIG. 5, when an alternating current of 50Hz was applied to the structure, a current of 50Hz flowed through the low-impedance copper strip because the resistance of the copper layer was much lower than that of the nickel layer (FIG. 5 a). When high-frequency common mode current flows in the structure, because the frequency of the common mode current is very high, the skin effect is obvious, at the moment, because the resistance of the nickel layer is weaker than the skin effect, the high-frequency common mode current passes through the common mode attenuators positioned at two sides of the copper bar under the action of the skin effect (figure 5 b), and because of the high resistivity of the nickel layer and the low skin depth of the nickel layer, the noise current is attenuated in the common mode attenuators. When high-frequency differential mode current passes through the structure, the effect of the proximity effect is obvious at the moment because the frequency of the differential mode current is very high, the effect of the proximity effect is greater than the impedance effect of the nickel layer, so that the differential mode current flows through the differential mode attenuator between the copper strips (figure 5 c), and the differential mode current is attenuated at the moment also because of the high resistivity of the nickel layer.
The common mode attenuator in the structure can be simplified into an RC filter, and when only the influence of the skin effect on the resistance is considered, the resistance of the attenuator is as follows:
wherein
Is the resistivity of the nickel and is,
is the thickness of the nickel layer and,
is the skin depth of the nickel,
is the width of the nickel layer.
Capacitance of the common mode attenuator:
wherein
Is the dielectric constant of air and is,
is the dielectric constant of the ceramic plate N1250 in the common mode attenuator,
is the thickness of the ceramic plate in the common mode attenuator,
is the area of the nickel layer.
The differential mode attenuator in the structure can be simplified into an RC filter, the resistance value of the RC filter is consistent with the resistance value algorithm in the common mode attenuator, and the capacitance value is as follows:
wherein,is the dielectric constant of air and is,
is a ceramic plate BaTiO in a differential mode attenuator3The dielectric constant of (a) is,
is the area of the nickel layer(s),
is the thickness of the ceramic plate in the differential mode attenuator,
is the area of the nickel layer.
This structure achieves integration of the differential-to-common mode capacitance by the connection as in fig. 4.
Claims (5)
1. A difference common mode capacitance integrated module for a high-power plane EMI filter comprises a common mode attenuator and a difference mode attenuator, and is characterized in that: the copper bar structure also comprises a U-shaped copper bar I and a U-shaped copper bar II; the two long arms of the U-shaped copper bar I are correspondingly connected with the two long arms of the U-shaped copper bar II through a differential mode attenuator respectively, and the outer sides of the two long arms of the U-shaped copper bar I, U are provided with a common mode attenuator respectively.
2. The integrated module of claim 1 for differential-to-common mode capacitance of high power planar EMI filter, wherein: the common mode attenuator comprises a ceramic plate I and nickel layers laminated on two sides of the ceramic plate I.
3. The integrated module of claim 2 for differential-to-common mode capacitance of high power planar EMI filter, wherein: the ceramic plate I is made of N1250 material.
4. The integrated module of claim 1 for differential-to-common mode capacitance of high power planar EMI filter, wherein: the common mode attenuator comprises a ceramic plate II and nickel layers covering two sides of the ceramic plate II.
5. The integrated module of claim 4 for differential-to-common mode capacitance of high power planar EMI filters, wherein: the ceramic plate II adopts BaTiO3And (5) manufacturing materials.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310080253XA CN103208974A (en) | 2013-03-13 | 2013-03-13 | Differential-mode and common-mode capacitance integration module for high-power plane electro-magnetic interference (EMI) filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310080253XA CN103208974A (en) | 2013-03-13 | 2013-03-13 | Differential-mode and common-mode capacitance integration module for high-power plane electro-magnetic interference (EMI) filter |
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| CN103208974A true CN103208974A (en) | 2013-07-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105207639A (en) * | 2014-06-19 | 2015-12-30 | 中兴通讯股份有限公司 | Planar filter device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1335392A1 (en) * | 2000-07-14 | 2003-08-13 | Matsushita Electric Industrial Co., Ltd. | Ceramic electronic device and method of manufacturing the device |
| CN1783373A (en) * | 2004-10-08 | 2006-06-07 | 罗门哈斯电子材料有限公司 | Capacitor structure |
| CN101854152A (en) * | 2010-04-30 | 2010-10-06 | 南京航空航天大学 | Planar electromagnetic interference (EMI) filter integration module consisting of circular printed circuit board (PCB) wire turns |
-
2013
- 2013-03-13 CN CN201310080253XA patent/CN103208974A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1335392A1 (en) * | 2000-07-14 | 2003-08-13 | Matsushita Electric Industrial Co., Ltd. | Ceramic electronic device and method of manufacturing the device |
| CN1783373A (en) * | 2004-10-08 | 2006-06-07 | 罗门哈斯电子材料有限公司 | Capacitor structure |
| CN101854152A (en) * | 2010-04-30 | 2010-10-06 | 南京航空航天大学 | Planar electromagnetic interference (EMI) filter integration module consisting of circular printed circuit board (PCB) wire turns |
Non-Patent Citations (1)
| Title |
|---|
| 罗昉: "三相电机驱动系统中电磁干扰及其功率密度滤波方案研究", 《中国博士学位论文全文数据库工程科技Ⅱ辑》, no. 11, 15 November 2010 (2010-11-15), pages 042 - 73 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105207639A (en) * | 2014-06-19 | 2015-12-30 | 中兴通讯股份有限公司 | Planar filter device |
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Owner name: DELTA ELECTRONICS ENTERPRISE MANAGEMENT (SHANGHAI) Effective date: 20140903 |
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Effective date of registration: 20140903 Address after: Yudaojie Qinhuai District of Nanjing City, Jiangsu Province, No. 29 210016 Applicant after: Nanjing University of Aeronautics and Astronautics Applicant after: Delta Electronic Enterprise Management (Shanghai) Co., Ltd. Address before: Yudaojie Nanjing 210016 Jiangsu province No. 29 Applicant before: Nanjing University of Aeronautics and Astronautics |
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Application publication date: 20130717 |